JP3788476B2 - Wafer inspection probe member, probe card for wafer inspection, and wafer inspection apparatus - Google Patents

Description

  The present invention relates to a wafer inspection probe member, a wafer inspection probe card, and a wafer inspection apparatus that are used to perform electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state.

In general, in the manufacturing process of a semiconductor integrated circuit device, a large number of integrated circuits are formed on a wafer made of, for example, silicon, and then each of these integrated circuits has a defect by inspecting basic electrical characteristics. A probe test is performed to select the integrated circuit. Next, a semiconductor chip is formed by dicing the wafer, and the semiconductor chip is housed in an appropriate package and sealed. Further, each packaged semiconductor integrated circuit device is subjected to a burn-in test for selecting a semiconductor integrated circuit device having a potential defect by inspecting electrical characteristics in a high temperature environment.
In an electrical inspection of an integrated circuit such as a probe test or a burn-in test, in order to electrically connect each of the electrodes to be inspected in the inspection object to a tester, they are arranged according to a pattern corresponding to the pattern of the electrodes to be inspected. A probe card having an inspection electrode is used. As such a probe card, one in which inspection electrodes (inspection probes) made of pins or blades are arranged has been used.

Thus, in a probe test performed on an integrated circuit formed on a wafer, conventionally, a wafer is divided into a plurality of areas in which, for example, 16 integrated circuits are formed, and all of the areas formed in this area are formed. A method is adopted in which a probe test is collectively performed on the integrated circuits and a probe test is sequentially performed on integrated circuits formed in other areas. In recent years, in order to improve the inspection efficiency and reduce the inspection cost, it is required to perform a probe test on a larger number of integrated circuits at once.
On the other hand, in the burn-in test, the integrated circuit device to be inspected is very small and inconvenient to handle. Therefore, in order to individually perform the burn-in test for many integrated circuit devices, it is long. Time is required, which leads to a considerably high inspection cost. Therefore, in recent years, a WLBI (Wafer Level Burn-in) test for performing a burn-in test on a large number of integrated circuits formed on a wafer has been proposed.

However, in order to produce a probe card used in such a probe test or WLBI test, it is necessary to arrange a very large number of inspection probes, so that the probe card becomes extremely expensive, When there are a large number of electrodes to be inspected and the pitch is small, it is difficult to manufacture the probe card itself.
For the reasons described above, recently, an inspection circuit board in which a plurality of inspection electrodes are formed according to a pattern corresponding to the pattern of the electrode to be inspected on one surface, and the inspection circuit board are arranged on one surface. An anisotropic conductive elastomer sheet having a plurality of conductive portions extending in the thickness direction according to a pattern corresponding to the pattern of the electrode to be inspected, and a sheet-like probe disposed on the anisotropic conductive elastomer sheet Proposed probe cards have been proposed (for example, Patent Document 1). A sheet-like probe in this probe card includes an insulating sheet and a plurality of electrode structures arranged on the insulating sheet according to a pattern corresponding to the pattern of the electrode to be inspected and extending in the thickness direction of the insulating sheet. And a ring-shaped holding member made of, for example, ceramics provided at the peripheral edge of the insulating sheet.

However, if the wafer to be inspected is a large one having a diameter of, for example, 8 inches or more and the number of electrodes to be inspected is, for example, 5000 or more, particularly 10,000 or more, the wafer to be inspected in each integrated circuit. Since the pitch of the inspection electrodes is extremely small, the anisotropic conductive elastomer sheet in the probe card has the following problems.
(1) In order to inspect a wafer having a diameter of, for example, 8 inches (about 20 cm) at once or divided into an area where a plurality of integrated circuits are formed, the anisotropic conductive elastomer sheet has an area of It is necessary to use a considerably large one. However, such an anisotropic conductive elastomer sheet has a considerably large area, but each conductive part is fine, and the ratio of the area of the conductive part surface to the anisotropic conductive elastomer sheet surface is small. Therefore, it is extremely difficult to reliably manufacture the anisotropic conductive elastomer sheet. Therefore, in the production of the anisotropic conductive elastomer sheet, the production yield of the anisotropic conductive elastomer sheet increases as a result of the extremely low yield, which in turn increases the inspection cost.
(2) The coefficient of linear thermal expansion of the material constituting the wafer, such as silicon, is about 3.3 × 10 ⁻⁶ / K, while the coefficient of linear thermal expansion of the material constituting the anisotropic conductive elastomer sheet, such as silicone rubber, is It is about 2.2 × 10 ⁻⁴ / K. Thus, when the linear thermal expansion coefficient differs greatly between the material constituting the integrated circuit device to be inspected (eg, silicon) and the material constituting the anisotropic conductive elastomer sheet (eg, silicone rubber), the temperature When the thermal history due to the change is received, as a result of displacement between the conductive portion of the anisotropic conductive elastomer sheet and the electrode to be inspected of the integrated circuit device, the electrical connection state changes and a stable connection state is obtained. It is difficult to maintain.
In order to solve the above problem, a frame plate having a plurality of openings formed corresponding to the electrode regions where the electrodes to be inspected of the integrated circuit in the wafer to be inspected are formed, and each of the openings of the frame plate An anisotropic conductive connector comprising a plurality of elastic anisotropic conductive films arranged so as to close the cover has been proposed (see, for example, Patent Document 2).

On the other hand, the sheet-like probe in the probe card has the following problems.
In the above-described probe of the probe card, in order to prevent or suppress the thermal expansion of the insulating sheet, the insulating sheet is fixed to the holding member in a state where tension is applied thereto.
However, it is extremely difficult to apply a uniform tension to the insulating sheet in all directions in the surface direction, and the balance of the tension acting on the insulating sheet is changed by forming the electrode structure. As a result, since the insulating sheet has anisotropy with respect to thermal expansion, even if it is possible to suppress the thermal expansion in the negative direction in the plane direction, The thermal expansion in the direction cannot be suppressed. Therefore, when receiving a thermal history due to a temperature change, it is not possible to reliably prevent displacement between the electrode structure and the electrode to be inspected.
Further, in order to fix the insulating sheet to the holding member in a state in which tension is applied thereto, a complicated process of adhering the insulating sheet to the holding member under heating is necessary. There is a problem of causing an increase.

In order to solve the above problem, the applicant of the present application has a frame plate in which a plurality of openings are formed corresponding to an electrode region where an inspection target electrode of an integrated circuit is formed on a wafer to be inspected, and the frame plate A sheet-like probe comprising a plurality of contact films in which an electrode structure is arranged on an insulating film, which is arranged and supported so as to close each of the openings on one surface, and the sheet-like probe and the anisotropic conductive connector described above (See Japanese Patent Application No. 2004-305956).
However, it has been found that such a probe card has the following problems.
In order to achieve good electrical connection in the connection operation between the wafer to be inspected and the probe card, the conductive part of the anisotropic conductive connector in the probe card is arranged in the thickness direction by the back electrode part of the sheet-like probe. It is important to press and compress sufficiently.
However, as shown in FIG. 52, the frame plate 81 in the sheet-like probe 80 exists between the contact film 85 in the sheet-like probe 80 and the elastic anisotropic conductive film 95 in the anisotropic conductive connector 90. Thus, when the electrode structure 86 of the sheet-like probe 80 is pressurized, the frame plate 81 of the sheet-like probe 80 comes into contact with the elastic anisotropic conductive film 95 of the anisotropic conductive connector 90. The back electrode portion 87 cannot reliably compress the conductive portion 96 of the elastic anisotropic conductive film 95 in the thickness direction, and as a result, it is difficult to reliably achieve a good electrical connection state.

Japanese Patent Laid-Open No. 2001-15565 Japanese Patent Laid-Open No. 2002-184821

  The present invention has been made based on the above circumstances, and its purpose is that a wafer to be inspected has a large area with a diameter of 8 inches or more and an extremely small pitch of electrodes to be inspected. However, it is possible to reliably achieve a good electrical connection state with respect to the wafer, and it is possible to reliably prevent displacement of the electrode to be inspected due to a temperature change, and to maintain a stable good electrical connection state with respect to the wafer. An object of the present invention is to provide a probe member for wafer inspection, a probe card for wafer inspection, and a wafer inspection apparatus.

The probe member for wafer inspection according to the present invention is a metal in which a plurality of openings are formed corresponding to electrode regions where electrodes to be inspected are arranged in all or part of integrated circuits formed on a wafer to be inspected. And a plurality of contact films arranged and supported on the surface of the frame plate so as to close the openings, and each of the contact films is formed on a flexible resin insulating film. A plurality of electrode structures formed by connecting a surface electrode portion exposed on the front surface and a back electrode portion exposed on the back surface by a short-circuit portion extending in the thickness direction of the insulating film are arranged according to a pattern corresponding to the electrode to be inspected. A sheet probe,
The sheet-like probe comprises: a frame plate having a plurality of openings formed corresponding to the electrode regions; and a plurality of elastic anisotropic conductive films arranged and supported on the frame plate so as to close one opening. An anisotropic conductive connector disposed on the back surface of
Each of the openings of the frame plate in the sheet-like probe is sized so as to receive the outer shape in the surface direction of the elastic anisotropic conductive film of the anisotropic conductive connector.

In the probe member for wafer inspection according to the present invention, the elastic anisotropic conductive film is connected according to the conductive polymer exhibiting magnetism contained in the elastic polymer material, arranged according to the pattern corresponding to the electrode to be inspected. It is preferable to have a conductive portion and an insulating portion made of an elastic polymer material that insulates the conductive portion from each other.
In such a wafer inspection probe member, the gap between the level of the surface of the frame plate in the anisotropic conductive connector and the level of the end surface on the surface side of the connecting conductive portion of the elastic anisotropic conductive film is defined as h, When the gap between the level of the back surface of the frame plate in the probe and the level of the electrode surface of the back surface electrode portion is d, the ratio h / d is preferably 1.2 or more.

In the probe member for wafer inspection according to the present invention, the thickness of the frame plate in the sheet-like probe is preferably 10 to 200 μm.
Moreover, it is preferable that the frame plate in the sheet-like probe and the frame plate in the anisotropic conductive connector are each formed of a material having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less.

  The probe card for wafer inspection according to the present invention includes an inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the electrodes to be inspected in all or some of the integrated circuits formed on the wafer to be inspected, The wafer inspection probe member is provided on the surface of the inspection circuit board.

The wafer inspection apparatus of the present invention is a wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
It comprises the probe card for wafer inspection described above.

According to the probe member for wafer inspection of the present invention, each of the openings of the frame plate in the sheet-like probe is sized to accept the outer shape in the surface direction of the elastic anisotropic conductive film of the anisotropic conductive connector. Therefore, when the electrode structure of the sheet-like probe is pressurized, it is avoided that the frame plate of the sheet-like probe contacts the elastic anisotropic conductive film of the anisotropic conductive connector. The directionally conductive film can be reliably compressed in the thickness direction, and as a result, a good electrical connection state to the wafer can be reliably achieved.
And according to the probe member for wafer inspection of the present invention, the sheet-like probe is supported by arranging and supporting a contact film having an electrode structure in each of a plurality of openings formed in the frame plate. Each of the contact films may have a small area, and a contact film with a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film, so that the wafer to be inspected has a large area of 8 inches or more in diameter. Even when the pitch of the electrodes to be inspected is extremely small, it is possible to reliably prevent the positional deviation due to the temperature change. In addition, the anisotropic conductive connector has a small area because each of the anisotropic anisotropic conductive films is supported by an elastic anisotropic conductive film disposed and supported in each of a plurality of openings formed in the frame plate. Well, an elastic anisotropic conductive film with a small area has a small absolute amount of thermal expansion in the surface direction, so that the wafer to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes to be inspected is extremely large. Even if it is small, it is possible to reliably prevent positional deviation due to temperature change. Therefore, it is possible to stably maintain a favorable electrical connection state with respect to the wafer in the inspection of the wafer.

  Further, by setting the value of the ratio h / d to 1.2 or more, when the electrode structure of the sheet-like probe is pressurized, the conductive portion for connection of the elastic anisotropic conductive film is sufficient in the thickness direction. Therefore, a good electrical connection state to the wafer can be achieved more reliably.

According to the wafer inspection probe card of the present invention, since the wafer inspection probe member is provided, the wafer to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes to be inspected. Even if it is extremely small, it is possible to reliably achieve a good electrical connection state, and to reliably prevent displacement with respect to the electrode to be inspected due to a temperature change. Stable connection state can be maintained.
Such a wafer inspection probe card is extremely suitable as a probe card used in a wafer inspection apparatus for performing an electrical inspection of a large area wafer having a diameter of 8 inches or more.

Hereinafter, embodiments of the present invention will be described in detail.
<Probing member for wafer inspection>
FIG. 1 is an explanatory view showing a configuration of a first example of a wafer inspection probe member (hereinafter simply referred to as a “probe member”) according to the present invention, and FIG. 2 shows a probe shown in FIG. It is sectional drawing for description which expands and shows the principal part of a member.
The probe member 1 of the first example is used for performing a burn-in test of each of the integrated circuits on the wafer on which a plurality of integrated circuits are formed, for example, in a wafer state. And the anisotropic conductive connector 40 disposed on the back surface of the sheet-like probe 10.

FIG. 3 is a plan view showing the sheet-like probe 10 in the probe member 1 of the first example, and FIGS. 4 and 5 are a plan view and an explanatory cross-section showing the contact film in the sheet-like probe 10 in an enlarged manner. FIG.
As shown in FIG. 6, the sheet-like probe 10 includes a circular frame plate 11 made of metal in which a plurality of openings are formed. The opening 12 of the frame plate 11 is formed corresponding to the pattern of the electrode region where the electrodes to be inspected are formed in all the integrated circuits formed on the wafer to be inspected.

As the metal constituting the frame plate 11, iron, copper, nickel, titanium, molybdenum, or an alloy or alloy steel thereof can be used. In the manufacturing method described later, the opening 12 can be easily formed by an etching process. Therefore, iron-nickel alloy steels such as 42 alloy, Invar, and Kovar are preferable.
The frame plate 11 preferably has a coefficient of linear thermal expansion of 3 × 10 ⁻⁵ / K or less, more preferably −1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably. Is −1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of the material constituting the frame plate 11 include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

Moreover, it is preferable that the thickness of the frame board 11 is 10-200 micrometers, More preferably, it is 10-150 micrometers.
If this thickness is too small, the strength required for the frame plate that supports the contact film 15 may not be obtained. On the other hand, if this thickness is excessive, it may be difficult to form the opening 12 with high dimensional accuracy by etching in a manufacturing method described later.

A metal film 18 is integrally formed on one surface of the frame plate 11 via an adhesive layer 19, and a plurality of contact films 15 closes one opening 12 of the frame plate 11 on the metal film 18. Thus, each of the contact films 15 is supported by the frame plate 11 via the adhesive layer 19 and the metal film 18. On the other surface of the frame plate 11, a circular ring-shaped holding member 14 is disposed along the peripheral edge of the frame plate 11, and the frame plate 11 is held by the holding member 14.
The metal film 18 is made of the same material as that of the back electrode portion 17b in the electrode structure 17 described later.
Moreover, as a material which comprises the adhesive layer 19, a silicone rubber adhesive, an epoxy adhesive, a polyimide adhesive, a cyanoacrylate adhesive, a polyurethane adhesive, or the like can be used.
Further, as the material constituting the holding member 14, an invar type alloy such as invar and super invar, an elinvar type alloy such as elimber, a low thermal expansion metal material such as kovar and 42 alloy, or alumina, silicon carbide, silicon nitride, etc. A ceramic material or the like can be used.

Each of the contact films 15 has a flexible insulating film 16, and a plurality of electrode structures 17 made of metal extending in the thickness direction of the insulating film 16 are formed on the wafer to be inspected. In accordance with the pattern corresponding to the pattern of the electrode to be inspected in the electrode region of the integrated circuit, the insulating film 16 is arranged so as to be spaced apart from each other, and the contact film 15 includes each of the electrode structures 17. It arrange | positions so that it may be located in the opening 12 of the frame board 11. FIG.
Each of the electrode structures 17 includes a protruding surface electrode portion 17 a exposed on the surface of the insulating film 16 and a plate-like back surface electrode portion 17 b exposed on the back surface of the insulating film 16 in the thickness direction of the insulating film 16. They are integrally connected to each other by a short-circuit portion 17c extending therethrough.

The material constituting the insulating film 16 is not particularly limited as long as it is flexible and has insulating properties, and resin materials such as polyimide and liquid crystal polymer, and composite materials thereof can be used. In the manufacturing method, it is preferable to use polyimide in that the through holes for the electrode structure can be easily formed by etching.
As other materials constituting the insulating film 16, a mesh or a nonwoven fabric, or a material in which these are impregnated with a resin or an elastic polymer substance can be used. As fibers forming such a mesh or nonwoven fabric, aramid fibers, polyethylene fibers, polyarylate fibers, nylon fibers, fluororesin fibers such as Teflon (registered trademark) fibers, and organic fibers such as polyester fibers can be used. By using such a material as a material constituting the insulating film 16, even if the electrode structures 17 are arranged at a small pitch, the flexibility of the entire contact film 15 is not greatly reduced. Even if there is a variation in the protruding height of the electrode or the protruding height of the electrode to be inspected, the contact film 15 is sufficiently absorbed by the flexibility of the contact film 15, so that stable electrical connection to each of the electrodes to be inspected can be achieved reliably. can do.
The thickness of the insulating film 16 is not particularly limited as long as the flexibility of the insulating film 16 is not impaired, but is preferably 5 to 150 μm, more preferably 7 to 100 μm, and still more preferably 10 to 50 μm. .

  As a material constituting the electrode structure 17, nickel, iron, copper, gold, silver, palladium, iron, cobalt, tungsten, rhodium, or an alloy or alloy steel thereof can be used. May be composed of a single metal as a whole, or may be composed of an alloy or alloy of two or more metals, or may be a laminate of two or more metals.

In addition, when an electrical inspection is performed on an electrode to be inspected having an oxide film formed on the surface, the electrode structure 17 of the sheet-like probe and the electrode to be inspected are brought into contact with each other and the surface electrode portion 17a of the electrode structure 17 covers It is necessary to destroy the oxide film on the surface of the inspection electrode to achieve electrical connection between the electrode structure 17 and the electrode to be inspected. Therefore, it is preferable that the surface electrode portion 17a of the electrode structure 17 has such a hardness that the oxide film can be easily broken. In order to obtain such a surface electrode part 17a, the metal which comprises the surface electrode part 17a can be made to contain a powder material with high hardness.
As such a powder substance, diamond powder, silicon nitride, silicon carbide, ceramics, glass or the like can be used. By containing an appropriate amount of these non-conductive powder substances, the conductivity of the electrode structure 17 can be increased. The oxide film formed on the surface of the electrode to be inspected can be destroyed by the surface electrode portion 17a of the electrode structure 17 without damaging the structure.
Further, in order to easily destroy the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 17a in the electrode structure 17 is a sharp protrusion, or fine irregularities are formed on the surface of the surface electrode portion 17a. Or can be formed.

The pitch p of the electrode structures 17 in the contact film 15 is set according to the pitch of the electrodes to be inspected on the wafer to be inspected, and is preferably 40 to 250 μm, and more preferably 40 to 150 μm, for example.
Here, the “pitch of electrode structures” is the shortest distance between the centers of adjacent electrode structures.

In the electrode structure 17, the ratio of the protrusion height to the diameter R in the surface electrode portion 17a is preferably 0.2 to 3, more preferably 0.25 to 2.5. By satisfying such conditions, even if the electrodes to be inspected have a small pitch and a minute one, the electrode structure 17 having a pattern corresponding to the pattern of the electrodes to be inspected can be easily formed. A stable electrical connection state can be reliably obtained for the wafer.
Moreover, it is preferable that the diameter R of the surface electrode part 17a is 1-3 times the diameter r of the short circuit part 17c, More preferably, it is 1-2 times.
The diameter R of the surface electrode portion 17a is preferably 30 to 75% of the pitch p of the electrode structure 17 and more preferably 40 to 60%.

Further, the outer diameter L of the back electrode portion 17b may be larger than the diameter r of the short-circuit portion 17c and smaller than the pitch p of the electrode structure 17, but is preferably as large as possible. Thereby, for example, a stable electrical connection can be reliably achieved even for an anisotropic conductive sheet.
Further, the diameter r of the short-circuit portion 17c is preferably 15 to 75% of the pitch p of the electrode structure 17, and more preferably 20 to 65%.

The specific dimensions of the electrode structure 17 will be described. The protruding height of the surface electrode portion 17a is 15 to 50 μm in that stable electrical connection can be achieved with respect to the electrode to be inspected. Preferably, it is 15-30 micrometers.
The diameter R of the surface electrode portion 17a is set in consideration of the above conditions, the diameter of the electrode to be inspected, etc., and is, for example, 30 to 200 μm, and preferably 35 to 150 μm.
The diameter r of the short-circuit portion 17c is preferably 10 to 120 μm, more preferably 15 to 100 μm, from the viewpoint that sufficiently high strength can be obtained.
The thickness of the back electrode part 17b is preferably 15 to 150 μm, more preferably 20 to 100 μm, in that the strength is sufficiently high and excellent repeated durability can be obtained.

  A coating film may be formed on the front electrode portion 17a and the back electrode portion 17b in the electrode structure 17 as necessary. For example, when the electrode to be inspected is made of a solder material, from the viewpoint of preventing the solder material from diffusing, the surface electrode portion 17a is covered with a non-diffusible metal such as silver, palladium, or rhodium. It is preferable to form a covering film.

Such a sheet-like probe 10 is manufactured as follows.
First, as shown in FIG. 7, the insulating film resin sheet 16A is integrally laminated on one surface of the back electrode portion metal foil 18A made of the same material as the back electrode portion 17b in the electrode structure 17 to be formed. A circular laminated body 15A is prepared.
On the other hand, as shown in FIG. 8, a circular frame plate 11 in which a plurality of openings 12 are formed corresponding to the pattern of the electrode region in which the inspection target electrode of the integrated circuit is formed on the wafer to be inspected, A protective tape 20 is disposed on one surface of the frame plate 11 along its peripheral edge. Here, as a method of forming the opening 12 of the frame plate 11, an etching method or the like can be used.

Next, as shown in FIG. 9, an adhesive layer 19 made of, for example, an adhesive resin is formed on the other surface of the metal foil 18A for the back electrode portion in the laminate 15A, and a protective tape 20 is provided as shown in FIG. Glued frame board. Thereafter, as shown in FIG. 11, a plurality of through holes 17 </ b> H penetrating in the thickness direction are formed in the insulating film resin sheet 16 </ b> A in the laminated body 15 </ b> A according to the pattern corresponding to the pattern of the electrode structure to be formed. Here, as a method of forming the through-hole 17H in the insulating film resin sheet 16A, laser processing, etching processing, or the like can be used.
Next, the back surface of the frame plate 11 and the opening 12 are covered with a protective tape (not shown), and the back electrode part metal foil 18A in the laminated body 15A is plated, so that an insulating film is formed as shown in FIG. In each through hole 17H formed in the resin sheet 16A, a short-circuit portion 17c integrally connected to the metal foil 18A for the back electrode portion is formed, and for the insulating film integrally connected to the short-circuit portion 17c A surface electrode portion 17a protruding from the surface of the resin sheet 16A is formed. Thereafter, the protective tape is removed from the frame plate 11 and, as shown in FIG. 13, a portion of the adhesive layer 19 exposed from the opening 12 of the frame plate 11 is removed, so that a part of the metal foil 18A for the back electrode portion is removed. By exposing and performing an etching process on the exposed portion of the metal foil 18A for the back electrode portion, as shown in FIG. 14, a plurality of back electrode portions 17b integrally connected to the short-circuit portion 17c are formed. Thus, the electrode structure 17 is formed. Next, the insulating film resin sheet 16A is subjected to an etching process and a part thereof is removed, thereby forming a plurality of independent insulating films 16 as shown in FIG. A plurality of contact films 15 are formed in which a plurality of electrode structures 17 extending in the thickness direction through 16 are arranged.
And the protective tape 20 (refer FIG. 8) is removed from the peripheral part of the frame board 11, and it shows in FIGS. 3-5 by arrange | positioning and fixing a holding member to the peripheral part in the back surface of the frame board 11 after that. A sheet-like probe 10 is obtained.

  As shown in FIG. 16, the anisotropic conductive connector 40 includes a disk-shaped frame plate 41 in which a plurality of openings 42 extending through the thickness direction are formed. The opening 42 of the frame plate 41 is formed corresponding to the pattern of the electrode region where the electrodes to be inspected are formed in all the integrated circuits formed on the wafer to be inspected. A plurality of elastic anisotropic conductive films 50 having conductivity in the thickness direction are arranged on the frame plate 41 in a state of being supported by the opening edge portions of the frame plate 41 so as to block the one opening 42. .

Each of the elastic anisotropic conductive films 50 is made of an elastic polymer material, and is formed around a plurality of connection conductive portions 52 extending in the thickness direction and the connection conductive portions 52. Each of the conductive parts 52 has a functional part 51 including an insulating part 53 that insulates the conductive parts 52 from each other, and the functional part 51 is disposed within the opening 42 of the frame plate 41. The conductive portion 52 for connection in the functional portion 51 is arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the electrode area in the integrated circuit formed on the wafer to be inspected.
A supported portion 55 fixedly supported by the opening edge portion of the frame plate 41 is formed integrally and continuously with the functional portion 51 at the periphery of the functional portion 51. Specifically, the supported portion 55 in this example is formed in a bifurcated shape, and is fixedly supported in close contact so as to grip the opening edge of the frame plate 41.
The conductive part 52 for connection in the functional part 51 of the elastic anisotropic conductive film 50 contains the conductive particles P exhibiting magnetism densely in an aligned state in the thickness direction. On the other hand, the insulating part 53 contains no or almost no conductive particles P.
Further, in the illustrated example, on both surfaces of the functional portion 51 in the elastic anisotropic conductive film 50, protruding portions 54 that protrude from other surfaces are formed at locations where the connecting conductive portion 52 and its peripheral portion are located. ing.

Although the thickness of the frame board 41 changes with the materials, it is preferable that it is 20-600 micrometers, More preferably, it is 40-400 micrometers.
When this thickness is less than 20 μm, the strength required when using the anisotropic conductive connector 40 is not obtained, the durability tends to be low, and the shape of the frame plate 41 is maintained. A degree of rigidity cannot be obtained, and the handleability of the anisotropic conductive connector 40 is low. On the other hand, when the thickness exceeds 600 μm, the elastic anisotropic conductive film 50 formed in the opening 42 is excessively thick, and has good conductivity in the connection conductive portion 52 and adjacent connection. It may be difficult to obtain insulation between the conductive portions 52.
The shape and size in the surface direction of the opening 42 of the frame plate 41 are designed according to the size, pitch, and pattern of the electrodes to be inspected of the wafer to be inspected.

The material constituting the frame plate 41 is not particularly limited as long as the frame plate 41 is not easily deformed and has rigidity enough to maintain its shape stably. For example, a metal material, a ceramic material Various materials such as a resin material can be used. When the frame plate 41 is made of, for example, a metal material, an insulating coating may be formed on the surface of the frame plate 41.
Specific examples of the metal material constituting the frame plate 41 include metals such as iron, copper, nickel, titanium, and aluminum, or alloys or alloy steels in which two or more of these are combined.

Moreover, as a material which comprises the frame board 41, it is preferable to use a thing with a linear thermal expansion coefficient of 3 * 10 < ^-5 > / K or less, More preferably, it is -1 * 10 < ^-7 > -1 * 10 < ^-5 > / K. Particularly preferably, it is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

The total thickness of the elastic anisotropic conductive film 50 (in the illustrated example, the thickness of the connecting conductive portion 52) is preferably 50 to 3000 μm, more preferably 70 to 2500 μm, and particularly preferably 100 to 2000 μm. If this thickness is 50 μm or more, the elastic anisotropic conductive film 50 having sufficient strength can be obtained reliably. On the other hand, if the thickness is 3000 μm or less, the connecting conductive portion 52 having the required conductive characteristics can be obtained with certainty.
The total protrusion height of the protrusions 54 is preferably 10% or more of the thickness of the protrusions 54, and more preferably 20% or more. By forming the projecting portion 54 having such a projecting height, the connecting conductive portion 52 is sufficiently compressed with a small applied pressure, so that good conductivity can be reliably obtained.
Further, the protrusion height of the protrusion 54 is preferably 100% or less of the shortest width or diameter of the protrusion 54, and more preferably 70% or less. By forming the projecting portion 54 having such a projecting height, the projecting portion 54 does not buckle when pressed, and thus the desired conductivity can be reliably obtained.
In addition, the thickness of the supported portion 55 (one thickness of the bifurcated portion in the illustrated example) is preferably 5 to 600 μm, more preferably 10 to 500 μm, and particularly preferably 20 to 400 μm.
Further, the supported portion 55 is not necessarily formed in a bifurcated shape, and may be fixed to only one surface of the frame plate 41.

As the elastic polymer material constituting the elastic anisotropic conductive film 50, a heat-resistant polymer material having a crosslinked structure is preferable. Various materials can be used as the curable polymer substance-forming material that can be used to obtain such a crosslinked polymer substance. Specific examples thereof include silicone rubber, polybutadiene rubber, natural rubber, and polyisoprene. Conjugated diene rubbers such as rubber, styrene-butadiene copolymer rubber, acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, styrene-butadiene-diene block copolymer rubber, styrene-isoprene block copolymer, etc. Block copolymer rubber and hydrogenated products thereof, chloroprene, urethane rubber, polyester rubber, epichlorohydrin rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, soft liquid epoxy rubber, etc. .
Among these, silicone rubber is preferable in terms of moldability and electrical characteristics.

As the silicone rubber, those obtained by crosslinking or condensing liquid silicone rubber are preferable. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be any of a condensation type, an addition type, a vinyl group or a hydroxyl group. Good. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, methyl phenyl vinyl silicone raw rubber, and the like.

Among these, liquid silicone rubber containing vinyl groups (vinyl group-containing polydimethylsiloxane) usually hydrolyzes dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylvinylchlorosilane or dimethylvinylalkoxysilane. And a condensation reaction, for example, followed by fractionation by repeated dissolution-precipitation.
In addition, the liquid silicone rubber containing vinyl groups at both ends is obtained by anionic polymerization of a cyclic siloxane such as octamethylcyclotetrasiloxane in the presence of a catalyst, using, for example, dimethyldivinylsiloxane as a polymerization terminator, and other reaction conditions. It can be obtained by appropriately selecting (for example, the amount of cyclic siloxane and the amount of polymerization terminator). Here, as the catalyst for anionic polymerization, alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or silanolate solution thereof can be used, and the reaction temperature is, for example, 80 to 130 ° C.
Such a vinyl group-containing polydimethylsiloxane preferably has a molecular weight Mw (referred to as a standard polystyrene equivalent weight average molecular weight; the same shall apply hereinafter) having a molecular weight of 10,000 to 40,000. In addition, from the viewpoint of heat resistance of the obtained elastic anisotropic conductive film 50, the molecular weight distribution index (the value of the ratio Mw / Mn between the standard polystyrene equivalent weight average molecular weight Mw and the standard polystyrene equivalent number average molecular weight Mn. The same applies hereinafter. ) Is preferably 2 or less.

On the other hand, a liquid silicone rubber containing hydroxyl groups (hydroxyl group-containing polydimethylsiloxane) usually undergoes hydrolysis and condensation reaction of dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylhydrochlorosilane or dimethylhydroalkoxysilane. For example, and fractionation by repeated dissolution-precipitation.
In addition, cyclic siloxane is anionically polymerized in the presence of a catalyst, and dimethylhydrochlorosilane, methyldihydrochlorosilane, dimethylhydroalkoxysilane or the like is used as a polymerization terminator, and other reaction conditions (for example, the amount of cyclic siloxane and polymerization termination). It can also be obtained by appropriately selecting the amount of the agent. Here, as the catalyst for anionic polymerization, alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or silanolate solution thereof can be used, and the reaction temperature is, for example, 80 to 130 ° C.

Such a hydroxyl group-containing polydimethylsiloxane preferably has a molecular weight Mw of 10,000 to 40,000. Further, from the viewpoint of heat resistance of the elastic anisotropic conductive film 50 to be obtained, those having a molecular weight distribution index of 2 or less are preferable.
In the present invention, either one of the above-mentioned vinyl group-containing polydimethylsiloxane and hydroxyl group-containing polydimethylsiloxane can be used, or both can be used in combination.

The polymer substance-forming material can contain a curing catalyst for curing the polymer substance-forming material. As such a curing catalyst, an organic peroxide, a fatty acid azo compound, a hydrosilylation catalyst, or the like can be used.
Specific examples of the organic peroxide used as the curing catalyst include benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide and ditertiary butyl peroxide.
Specific examples of the fatty acid azo compound used as the curing catalyst include azobisisobutyronitrile.
Specific examples of what can be used as a catalyst for the hydrosilylation reaction include chloroplatinic acid and salts thereof, platinum-unsaturated siloxane complex, vinylsiloxane and platinum complex, platinum and 1,3-divinyltetramethyldisiloxane. And the like, a complex of triorganophosphine or phosphite and platinum, an acetyl acetate platinum chelate, a complex of cyclic diene and platinum, and the like.
The amount of the curing catalyst used is appropriately selected in consideration of the type of polymer substance-forming material, the type of curing catalyst, and other curing conditions, but usually 3 to 100 parts by weight of the polymer substance-forming material. 15 parts by weight.

In the formation of the elastic anisotropic conductive film 50, the conductive particles P contained in the connection conductive portion 52 in the elastic anisotropic conductive film 50 are included in the molding material for forming the elastic anisotropic conductive film 50. From the viewpoint that the conductive particles P can be easily moved, it is preferable to use those showing magnetism. Specific examples of such conductive particles P exhibiting magnetism include metal particles exhibiting magnetism such as iron, nickel and cobalt, particles of these alloys, particles containing these metals, or cores of these particles. Particles with the surface of the core particles plated with a metal having good conductivity such as gold, silver, palladium, rhodium, or inorganic substance particles such as non-magnetic metal particles or glass beads, or polymer particles are used as core particles. The surface of the core particle is plated with a conductive magnetic material such as nickel or cobalt, or the core particle is coated with both a conductive magnetic material and a metal having good conductivity. It is done.
Among these, it is preferable to use nickel particles as core particles and the surfaces thereof plated with a metal having good conductivity such as gold or silver.
The means for coating the surface of the core particles with the conductive metal is not particularly limited, but can be performed by, for example, electroless plating.

In the case of using the conductive particles P in which the surface of the core particles is coated with a conductive metal, from the viewpoint of obtaining good conductivity, the coverage of the conductive metal on the particle surface (surface area of the core particles). The ratio of the covering area of the conductive metal with respect to is preferably 40% or more, more preferably 45% or more, and particularly preferably 47 to 95%.
The coating amount of the conductive metal is preferably 2.5 to 50% by weight of the core particles, more preferably 3 to 45% by weight, still more preferably 3.5 to 40% by weight, and particularly preferably 5%. ~ 30% by weight.

Moreover, it is preferable that the particle diameter of the electroconductive particle P is 1-500 micrometers, More preferably, it is 2-400 micrometers, More preferably, it is 5-300 micrometers, Most preferably, it is 10-150 micrometers.
Moreover, it is preferable that the particle diameter distribution (Dw / Dn) of the electroconductive particle P is 1-10, More preferably, it is 1-7, More preferably, it is 1-5, Most preferably, it is 1-4.
By using the conductive particles P satisfying such conditions, the obtained elastic anisotropic conductive film 50 can be easily deformed under pressure, and the connecting conductive portion 52 in the elastic anisotropic conductive film 50 can be obtained. In this case, sufficient electrical contact can be obtained between the conductive particles P.
The conductive particles P having such an average particle diameter are prepared by classifying the conductive particles and / or the core particles forming the conductive particles with a classifier such as an air classifier or a sonic sieve. be able to. Specific conditions for the classification treatment are appropriately set according to the average particle size and particle size distribution of the target conductive particles, the type of the classification device, and the like.
Further, the shape of the conductive particles P is not particularly limited, but spherical particles, star-shaped particles, or agglomerated particles 2 can be easily dispersed in the polymer substance-forming material. It is preferable that it is a lump with secondary particles.

  The moisture content of the conductive particles P is preferably 5% or less, more preferably 3% or less, still more preferably 2% or less, and particularly preferably 1% or less. By using the conductive particles P that satisfy such conditions, bubbles are prevented or suppressed from being generated in the molding material layer when the molding material layer is cured.

Moreover, what processed the surface of the electroconductive particle P with coupling agents, such as a silane coupling agent, can be used suitably. By treating the surface of the conductive particles P with a coupling agent, the adhesiveness between the conductive particles P and the elastic polymer substance is increased, and as a result, the obtained elastic anisotropic conductive film 50 is repeatedly formed. Durability in use is high.
The amount of the coupling agent used is appropriately selected within a range that does not affect the conductivity of the conductive particles P, but the coupling agent coverage on the surface of the conductive particles P (the cup relative to the surface area of the conductive core particles). The ratio of the ring agent covering area) is preferably 5% or more, more preferably 7 to 100%, further preferably 10 to 100%, and particularly preferably 20 to 100%. Amount.

  The content ratio of the conductive particles P in the connection conductive portion 52 of the functional portion 51 is preferably 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive portion 52 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained conductive part 52 for connection tends to be fragile, and the elasticity necessary for the conductive part 52 for connection may not be obtained.

In the polymer substance-forming material, an inorganic filler such as normal silica powder, colloidal silica, airgel silica, alumina, or the like can be contained as necessary. By including such an inorganic filler, the thixotropy of the obtained molding material is ensured, the viscosity thereof is increased, and the dispersion stability of the conductive particles P is improved, and the obtained molding material is cured. The strength of the elastic anisotropic conductive film 50 is increased.
The amount of such inorganic filler used is not particularly limited, but if it is used too much, movement of the conductive particles P due to a magnetic field is greatly hindered in the production method described later, which is not preferable.

  Such an anisotropic conductive connector 40 can be manufactured, for example, by a method described in JP-A-2002-334732.

In the probe member 1 of the first example, each of the openings 12 of the frame plate 11 in the sheet-like probe 10 receives the outer shape in the surface direction of the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. The size is possible. Specifically, since the opening 12 of the frame plate 11 in the sheet-like probe 10 is rectangular and the outer shape in the surface direction of the elastic anisotropic conductive film 50 is rectangular, the opening 12 of the frame plate 11 in the sheet-like probe 10. The vertical and horizontal dimensions are larger than the vertical and horizontal dimensions of the elastic anisotropic conductive film 50.
In addition, the gap between the level of the surface of the frame plate 41 (upper surface in FIG. 2) in the anisotropic conductive connector 40 and the level of the surface side end surface (upper surface in FIG. 2) of the connecting conductive portion 52 of the elastic anisotropic conductive film 50. Where h is d and the gap between the level of the back surface (lower surface in FIG. 2) of the frame plate 11 in the sheet-like probe 10 and the level of the electrode surface (lower surface in FIG. 2) of the back electrode portion is d / r Is preferably 1.2 or more, more preferably 1.5 or more, and particularly preferably 1.8 or more. When the value of this ratio h / d is less than 1.2, the frame plate 11 of the sheet-like probe 10 is anisotropically conductive when the connecting conductive portion 52 is pressed in the thickness direction by the back electrode portion 17b. The connection conductive portion 52 is not sufficiently compressed because it contacts the frame plate 41 of the conductive connector 40, and as a result, the required conductivity may not be obtained in the connection conductive portion 52.

According to the probe member 1 of the first example, each of the openings 12 of the frame plate 11 in the sheet-like probe 10 receives the outer shape in the surface direction of the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. Since the size is such that when the electrode structure 17 of the sheet-like probe 10 is pressurized, the frame plate 11 of the sheet-like probe 10 becomes the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. Since contact is avoided, the connecting conductive portion 52 of the elastic anisotropic conductive film 50 can be sufficiently compressed in the thickness direction, and as a result, a good electrical connection state to the wafer can be reliably achieved. be able to.
According to the probe member described above, the sheet-like probe 10 is configured such that the contact film 15 having the electrode structure 17 is disposed and supported in each of the plurality of openings 12 formed in the frame plate 11. Each of the contact films 15 may have a small area, and since the contact film 15 having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film 16, the wafer to be inspected has a diameter of 8 inches. Even if the pitch of the electrodes to be inspected is such a large area as described above, it is possible to reliably prevent the positional deviation between the electrode structure 17 and the electrodes to be inspected due to temperature changes. In addition, the anisotropic conductive connector 40 is configured such that the elastic anisotropic conductive film 50 is disposed and supported in each of the plurality of openings 12 formed in the frame plate 41, so that each of the elastic anisotropic conductive films 50 is supported. The elastic anisotropic conductive film 50 having a small area may have a small area, and since the absolute amount of thermal expansion in the surface direction is small, the wafer to be inspected has a large area of 8 inches or more in diameter and is covered. Even if the pitch of the inspection electrodes is extremely small, it is possible to reliably prevent the displacement between the connecting conductive portion and the electrode structure due to a temperature change. Therefore, in the burn-in test, it is possible to stably maintain a good electrical connection state to the wafer.

  Further, by setting the value of the ratio h / d to 1.2 or more, when the electrode structure 17 of the sheet-like probe 10 is pressurized, the connecting conductive portion 52 of the elastic anisotropic conductive film 50 is in the thickness direction. Therefore, a good electrical connection state to the wafer can be achieved more reliably.

FIG. 17 is a plan view showing a second example of the probe member according to the present invention, and FIG. 18 is an explanatory cross-sectional view showing the configuration of the main part of the probe member of the second example.
The probe member 1 of the second example is used for performing a probe test of each integrated circuit on a wafer on which a plurality of integrated circuits are formed, for example, in a wafer state. And the anisotropic conductive connector 40 disposed on the back surface of the sheet-like probe 10.

As shown in FIG. 19, the sheet-like probe 10 in the probe member 1 of the second example includes a frame plate 11 made of metal in which a plurality of openings are formed. The opening 12 of the frame plate 11 corresponds to a pattern of an electrode region in which electrodes to be inspected in, for example, 32 (8 × 4) integrated circuits formed on a wafer to be inspected. Is formed. Other configurations of the sheet-like probe 10 are the same as those of the sheet-like probe 10 of the probe member 1 of the first example (see FIGS. 4 and 5).
Further, the sheet-like probe 10 in the probe member 1 of the second example can be manufactured in the same manner as the first sheet-like probe 10.
As shown in FIG. 20, the anisotropic conductive connector 40 includes a rectangular plate-like frame plate 41 in which a plurality of openings 42 extending through the thickness direction are formed. The opening 42 of the frame plate 41 corresponds to a pattern of an electrode region in which electrodes to be inspected in, for example, 32 (8 × 4) integrated circuits formed on a wafer to be inspected. Is formed. A plurality of elastic anisotropic conductive films 50 having conductivity in the thickness direction are arranged on the frame plate 41 in a state of being supported by the opening edge portions of the frame plate 41 so as to block the one opening 42. . Other configurations of the anisotropic conductive connector 40 are the same as those of the anisotropic conductive connector 40 in the probe member 1 of the first example (see FIG. 15).
In the probe member 1 of the second example, each of the openings 12 of the frame plate 11 in the sheet-like probe 10 receives the outer shape in the surface direction of the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. It is the size to get. Specifically, since the opening 12 of the frame plate 11 in the sheet-like probe 10 is rectangular and the outer shape in the surface direction of the elastic anisotropic conductive film 50 is rectangular, the opening 12 of the frame plate 11 in the sheet-like probe 10. The vertical and horizontal dimensions are larger than the vertical and horizontal dimensions of the elastic anisotropic conductive film 50.
Further, the gap between the level of the surface of the frame plate 41 (upper surface in FIG. 18) in the anisotropic conductive connector 40 and the level of the surface side end surface (upper surface in FIG. 18) of the connecting conductive portion 52 of the elastic anisotropic conductive film 50. H / d, where d is the gap between the level of the back surface (lower surface in FIG. 18) of the frame plate 11 and the level of the electrode surface (lower surface in FIG. 18) of the back electrode portion in the sheet-like probe 10. The value is preferably 1.2 or more.

According to the probe member 1 of the second example, each of the openings 12 of the frame plate 11 in the sheet-like probe 10 receives the outer shape in the surface direction of the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. Since the size is such that when the electrode structure 17 of the sheet-like probe 10 is pressurized, the frame plate 11 of the sheet-like probe 10 becomes the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. Since contact is avoided, the connecting conductive portion 52 of the elastic anisotropic conductive film 50 can be sufficiently compressed in the thickness direction, and as a result, a good electrical connection state to the wafer can be reliably achieved. be able to.
According to the probe member 1, the sheet-like probe 10 is supported by the contact film 15 having the electrode structure 17 disposed in each of the plurality of openings 12 formed in the frame plate 11. Therefore, each of the contact films 15 may have a small area, and the contact film 15 having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film 16, so that the wafer to be inspected has a diameter of 8 Even when the pitch of the electrodes to be inspected is a large area of inch or more and the pitch of the electrodes to be inspected is extremely small, it is possible to reliably prevent the positional deviation between the electrode structure 17 and the electrodes to be inspected due to temperature changes. In addition, the anisotropic conductive connector 40 is configured such that the elastic anisotropic conductive film 50 is disposed and supported in each of the plurality of openings 12 formed in the frame plate 41, so that each of the elastic anisotropic conductive films 50 is supported. The elastic anisotropic conductive film 50 having a small area may have a small area, and since the absolute amount of thermal expansion in the surface direction is small, the wafer to be inspected has a large area of 8 inches or more in diameter and is covered. Even if the pitch of the inspection electrodes is extremely small, it is possible to reliably prevent the displacement between the connecting conductive portion and the electrode structure due to a temperature change. Therefore, it is possible to stably maintain a good electrical connection state to the wafer in the probe test.

  Further, by setting the value of the ratio h / d to 1.2 or more, when the electrode structure 17 of the sheet-like probe 10 is pressurized, the connecting conductive portion 52 of the elastic anisotropic conductive film 50 is in the thickness direction. Therefore, a good electrical connection state to the wafer can be achieved more reliably.

<Probe card for wafer inspection>
FIG. 21 is a cross-sectional view illustrating the configuration of a first example of a wafer inspection probe card (hereinafter simply referred to as “probe card”) according to the present invention, and FIG. 22 is a diagram illustrating the probe of the first example. It is sectional drawing for description which shows the structure of the principal part of a card | curd.
The probe card 30 of the first example is used for performing a burn-in test of each of the integrated circuits in a batch on a wafer on which a plurality of integrated circuits are formed, for example, for inspection. The circuit board 31 and the probe member 1 of the first example disposed on one surface (the upper surface in FIGS. 21 and 22) of the circuit board 31 for inspection are configured.

As shown also in FIG. 23, the inspection circuit board 31 has a disk-shaped first substrate element 32, and a central portion on the surface of the first substrate element 32 (upper surface in FIGS. 21 and 22). Are arranged in a regular octagonal plate-like second substrate element 35, and the second substrate element 35 is held by a holder 34 fixed to the surface of the first substrate element 32. In addition, a reinforcing member 37 is provided at the center of the back surface of the first substrate element 32.
A plurality of connection electrodes (not shown) are formed in an appropriate pattern at the center of the surface of the first substrate element 32. On the other hand, a lead electrode portion in which a plurality of lead electrodes 33 are arranged along the circumferential direction of the first substrate element 32 as shown in FIG. 33R is formed. The pattern of the lead electrode 33 is a pattern corresponding to an input / output terminal pattern of a controller in a wafer inspection apparatus described later. Each of the lead electrodes 33 is electrically connected to a connection electrode via an internal wiring (not shown).
On the surface of the second substrate element 35 (upper surface in FIGS. 21 and 22), a plurality of inspection electrodes 36 correspond to the patterns of the electrodes to be inspected in all integrated circuits formed on the wafer to be inspected. Inspection electrode portions 36R arranged in accordance with the pattern are formed. On the other hand, on the back surface of the second substrate element 35, a plurality of terminal electrodes (not shown) are arranged according to an appropriate pattern, and each of the terminal electrodes is connected to the inspection electrode 36 via an internal wiring (not shown). Electrically connected.
The connection electrode of the first substrate element 32 and the terminal electrode of the second substrate element 35 are electrically connected by appropriate means.

As a substrate material constituting the first substrate element 32 in the circuit board 31 for inspection, conventionally known various materials can be used. Specific examples thereof include glass fiber reinforced epoxy resin and glass fiber reinforced phenol. Examples thereof include composite resin substrate materials such as resin, glass fiber reinforced polyimide resin, and glass fiber reinforced bismaleimide triazine resin.
As a material constituting the second substrate element 35 in the circuit board 31 for inspection, it is preferable to use a material having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, and more preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably 1 × 10 ^{−6 to} 6 × 10 ⁻⁶ / K. Specific examples of such substrate materials include inorganic substrate materials made of Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, boron nitride, etc., iron such as 42 alloy, Kovar, and Invar. -The laminated board material etc. which laminated | stacked resin, such as an epoxy resin or a polyimide resin, using the metal plate which consists of nickel alloy steel as a core material are mentioned.

  The holder 34 has a regular octagonal opening 34 </ b> K that matches the outer shape of the second substrate element 35, and the second substrate element 35 is accommodated in the opening 34 </ b> K. The outer edge of the holder 34 is circular, and a step 34S is formed on the outer edge of the holder 34 along the circumferential direction.

  In the probe card 30 of the first example, the probe member 1 is on the surface of the inspection circuit board 31, and each of the connection conductive portions 52 of the anisotropic conductive connector 40 is on each of the inspection electrodes 36. It arrange | positions so that it may contact | connect and the holding member 14 of the sheet-like probe 10 is engaged with the step part 34S of the holder 34, and is being fixed.

  Since the probe card 30 of the first example has the probe member 1 of the first example described above, the wafer to be inspected has a large area of 8 inches or more in diameter and is to be inspected. Even if the electrode pitch is very small, it is possible to reliably achieve a good electrical connection to the wafer, and to reliably prevent displacement of the electrode to be inspected due to temperature change in the burn-in test. This makes it possible to stably maintain a good electrical connection to the wafer.

FIG. 25 is an explanatory cross-sectional view showing the configuration of the second example of the probe card according to the present invention, and FIG. 26 is an explanatory cross-sectional view showing the configuration of the main part of the probe card of the second example. .
The probe card 30 of the second example is used to perform a probe test of each integrated circuit in a wafer state on a wafer on which a plurality of integrated circuits are formed. And the probe member 1 of the second example provided on one surface of the circuit board 31 for inspection.
In the inspection circuit board 31 of the probe card 30 of the second example, as shown in FIG. 27, for example, 32 of the integrated circuits formed on the surface of the second substrate element 35 on the wafer to be inspected. An inspection electrode portion 36R in which a plurality of inspection electrodes 36 are arranged according to a pattern corresponding to the pattern of the inspection target electrodes in the eight (8 × 4) integrated circuits is formed. Other configurations of the inspection circuit board 31 are basically the same as those of the inspection circuit board 31 in the probe card 30 of the first example.
In the probe card 30 of the second example, the probe member 1 is on the surface of the inspection circuit board 31, and each of the connection conductive portions 52 of the anisotropic conductive connector 40 is on each of the inspection electrodes 36. It arrange | positions so that it may contact | connect and the holding member 14 of the sheet-like probe 10 is engaged with the step part 34S of the holder 34, and is being fixed.

  According to the probe card 30 of the second example as described above, since the probe member 1 of the second example is provided, the wafer to be inspected has a large area of 8 inches or more in diameter and is to be inspected. Even if the pitch of the electrodes is extremely small, it is possible to reliably achieve a good electrical connection to the wafer, and to reliably prevent misalignment with respect to the electrode to be inspected due to temperature changes in the probe test. This makes it possible to stably maintain a good electrical connection to the wafer.

[Wafer inspection equipment]
FIG. 28 is a cross-sectional view for explaining the outline of the configuration of the first example of the wafer inspection apparatus according to the present invention, and FIG. FIG. The first wafer inspection apparatus is for collectively performing a burn-in test of each integrated circuit in a wafer state for each of a plurality of integrated circuits formed on the wafer.
The wafer inspection apparatus of the first example detects the temperature of the wafer 6 to be inspected, power supply for inspecting the wafer 6, input / output control of signals, and output signals from the wafer 6 to detect the wafer 6 Has a controller 2 for determining whether the integrated circuit is good or bad. As shown in FIG. 30, the controller 2 has an input / output terminal portion 3R on the lower surface of which a large number of input / output terminals 3 are arranged along the circumferential direction.
Below the controller 2, the probe card 30 of the first example is held by appropriate holding means so that each of the lead electrodes 33 of the circuit board 31 for inspection faces the input / output terminal 3 of the controller 2. It is arranged in the state.
A connector 4 is arranged between the input / output terminal portion 3R of the controller 2 and the lead electrode portion 33R of the circuit board 31 for inspection in the probe card 30, as shown in FIG. Each of the lead electrodes 33 of the inspection circuit board 31 is electrically connected to each of the input / output terminals 3 of the controller 2. The connector 4 in the illustrated example includes a plurality of conductive pins 4A that can be elastically compressed in the length direction, and a support member 4B that supports these conductive pins 4A. They are arranged so as to be positioned between the output terminal 3 and the lead electrode 33 formed on the first substrate element 32.
Below the probe card 30, a wafer mounting table 5 on which the wafer 6 to be inspected is mounted is provided.

  In such a wafer inspection apparatus, the wafer 6 to be inspected is mounted on the wafer mounting table 5, and then the probe card 30 is pressed downward, whereby the electrode structure of the sheet-like probe 10 is placed. Each of the surface electrode portions 17a in 17 is in contact with each of the electrodes 7 to be inspected of the wafer 6, and each of the electrodes 7 to be inspected of the wafer 6 is pressurized by each of the surface electrode portions 17a. In this state, each of the connection conductive portions 52 in the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40 is connected to the test electrode 36 of the test circuit board 31 and the back surface of the electrode structure 17 of the sheet-like probe 10. The conductive portion 52 is sandwiched between the electrode portions 17b and compressed in the thickness direction, whereby a conductive path is formed in the connecting conductive portion 52 in the thickness direction. Electrical connection with the inspection electrode 36 of the circuit board 31 is achieved. Thereafter, the wafer 6 is heated to a predetermined temperature via the wafer mounting table 5, and in this state, a required electrical inspection is performed on each of the plurality of integrated circuits on the wafer 6.

  According to such a wafer inspection apparatus of the first example, the electrical connection of the wafer 6 to be inspected to the inspection target electrode 7 is achieved via the probe card 30 of the first example. However, even in a large area having a diameter of 8 inches or more and a pitch of the electrodes to be inspected 7 is extremely small, it is possible to reliably achieve a good electrical connection state to the wafer in the burn-in test, In addition, it is possible to reliably prevent the positional deviation with respect to the electrode 7 to be inspected due to the temperature change, and thereby it is possible to stably maintain a good electrical connection state with respect to the wafer 6. Therefore, a required electrical inspection for the wafer can be reliably executed in the wafer burn-in test.

FIG. 31 is an explanatory sectional view showing an outline of the configuration of the second example of the wafer inspection apparatus according to the present invention. FIG. 32 is an enlarged view of the configuration of the main part of the wafer inspection apparatus of the second example. FIG. This wafer inspection apparatus is for performing a probe test of an integrated circuit in a wafer state for each of a plurality of integrated circuits formed on the wafer.
The wafer inspection apparatus of the second example is basically the same as the wafer inspection apparatus of the first example except that the probe card 30 of the second example is used instead of the probe card 30 of the first example. It is the composition.
In the wafer inspection apparatus of the second example, the probe card 30 is electrically connected to the inspected electrodes 7 of, for example, 32 integrated circuits selected from all the integrated circuits formed on the wafer 6. The wafer 6 is then repeatedly inspected by repeatedly connecting the probe card 30 to the electrodes 7 to be inspected of the plurality of integrated circuits selected from the other integrated circuits. All the integrated circuits formed are probed.
According to the wafer inspection apparatus of the second example as described above, since the electrical connection of the wafer 6 to be inspected to the inspection target electrode 7 is achieved via the probe card 30 of the second example, the wafer 6 However, even in a large area having a diameter of 8 inches or more and a pitch of the electrodes to be inspected 7 is extremely small, it is possible to reliably achieve a good electrical connection state to the wafer in the burn-in test, In addition, it is possible to reliably prevent the positional deviation with respect to the electrode 7 to be inspected due to the temperature change, and thereby it is possible to stably maintain a good electrical connection state with respect to the wafer 6. Therefore, the required electrical inspection for the wafer can be reliably executed in the probe test of the wafer.

The present invention is not limited to the above embodiment, and various modifications can be made as follows.
(1) The holding member 14 in the sheet-like probe 10 is not essential in the present invention.
(2) The elastic anisotropic conductive film 50 in the anisotropic conductive connector 40 is not electrically connected to the electrode to be inspected in addition to the connecting conductive portion 52 formed according to the pattern corresponding to the pattern of the electrode to be inspected. A conductive portion for non-connection may be formed.
(3) The connector 4 for electrically connecting the controller 2 and the inspection circuit board 31 in the wafer inspection apparatus is not limited to the one shown in FIG. 30, and various structures can be used.

(4) The electrode structure 17 in the sheet-like probe 10 is not limited to that shown in FIG. 5, and various configurations can be used.
FIG. 33 is an explanatory cross-sectional view showing a configuration of a main part in another example of a sheet-like probe that can be used for the probe member of the present invention.
The electrode structure 17 in the sheet-like probe 10 is continuous from the base end of the frustum-shaped surface electrode portion 17a, the flat plate-like back surface electrode portion 17b, and the surface electrode portion 17a having a diameter that decreases from the front end to the base end. The short-circuit portion 17c extending through the insulating film 16 in the thickness direction and connected to the back surface electrode portion 17b, and continuously from the base end portion of the front surface electrode portion 17a along the surface direction of the insulating film 16 It is comprised by the holding | maintenance part 17d extended in the direction. The holding part 17d in the electrode structure 17 is embedded in the insulating film 16, and in the illustrated example, the surface of the holding part 17d is arranged so as to be on the same plane as the surface of the insulating film 16. Further, in the sheet-like probe 10 of this example, an insulating protective layer 21 is provided so as to cover the surface of the insulating film 16 and the surface of the holding portion 17d of the electrode structure 17, and the surface electrode portion of the electrode structure 17 is provided. 17a protrudes from the surface of the insulating protective layer 21. Other configurations of the sheet-like probe 10 are basically the same as those of the sheet-like probe 10 shown in FIG.
The material constituting the insulating protective layer 21 can be appropriately selected from those exemplified as the material constituting the insulating film 16, but is preferably an etchable material, and polyimide is particularly preferred.

The sheet-like probe 10 having such a configuration can be manufactured as follows, for example.
As shown in FIG. 34, the insulating protective layer resin sheet 21A, the plating electrode metal foil 22 integrally provided on the surface of the insulating protective layer resin sheet 21A, and the back surface of the insulating protective layer resin sheet 21A A laminated body 21 </ b> B composed of the holding part forming metal foil 23 provided integrally is prepared. Here, the insulating protective layer resin sheet 21A has a sum of the thickness and the thickness of the holding portion forming metal foil 23 that is equivalent to the protruding height of the surface electrode portion 17a to be formed. The metal foil 23 has a thickness equivalent to that of the holding portion 17d to be formed.
Next, by performing photolithography and etching on the holding portion forming metal foil 23 in the laminate 21B, the electrode structure 17 to be formed on the holding portion forming metal foil 23 is formed as shown in FIG. A plurality of openings 23K are formed according to a pattern corresponding to the pattern. Thereafter, the insulating protective layer resin sheet 21A is subjected to an etching process on the exposed portion of the holding portion forming metal foil 23 through the opening 23K, as shown in FIG. In addition, a plurality of tapered through-holes 21H each having a small diameter from the back surface to the front surface of the insulating protective layer resin sheet 21A communicating with the opening 23K of the holding portion forming metal foil 23 are formed. Then, by performing photolithography and etching on the holding portion forming metal foil 23, as shown in FIG. 37, holding portions 17d are formed around the respective through holes 21H on the back surface of the insulating protective layer resin sheet 21A. It is formed.

  Next, as shown in FIG. 38, the insulating film resin sheet 16A is integrally laminated on the back surface of the insulating protective layer resin sheet 21A, and the back surface electrode portion is formed on the back surface of the insulating film resin sheet 16A. The metal foil 18B is laminated integrally. Then, by performing photolithography and etching on the metal foil 18B for forming the back electrode part, as shown in FIG. 39, the back electrode of the electrode structure 17 to be formed on the metal foil 18B for forming the back electrode part. A plurality of openings 18K are formed according to a pattern corresponding to the portion 17b pattern. Thereafter, the insulating film resin sheet 16A is subjected to an etching process on the exposed portion through the opening 18K of the metal foil 18B for forming the back electrode part, as shown in FIG. Each of the plurality of taper-shaped tapers having a small diameter from the back surface to the surface of the insulating film resin sheet 16A, which communicates with the opening 18K of the metal foil 18B for forming the back electrode portion and the through hole 21H of the resin sheet 21A for insulating protective layer. Through-holes 17H are formed.

In the above, the etching agent for etching the holding part forming metal foil 23 and the back electrode part forming metal foil 18B is appropriately selected according to the material constituting the metal foil. Can be made of, for example, copper, an aqueous ferric chloride solution can be used.
Further, as an etching solution for etching the insulating protective layer resin sheet 21A and the insulating film resin sheet 16A, an amine-based etching solution, a hydrazine-based aqueous solution, a potassium hydroxide aqueous solution, or the like can be used. By selecting this, it is possible to form a tapered through-hole having a smaller diameter from the back surface to the front surface in each of the insulating protective layer resin sheet 21A and the insulating film resin sheet 16A.

Next, the laminated body 21B is subjected to electrolytic plating using the metal foil 22 for plating electrode as an electrode, and the inside of each through hole 21H of the insulating protective layer resin sheet 21A and each through hole 17H of the insulating film resin sheet 16A. By filling the inside with metal, as shown in FIG. 41, the front surface electrode portion 17a, the short-circuit portion 17c, and the back surface electrode portion 17b are formed, and thus the electrode structure 17 is formed. Here, each of the back surface electrode portions 17b is in a state of being connected to each other via the back surface electrode portion forming metal foil 18B. Thereafter, the back electrode part forming metal foil 18B is subjected to photolithography and etching treatment, thereby forming the back electrode parts 17b separated from each other as shown in FIG. Is formed. Then, as shown in FIG. 43, the frame plate 11 is bonded onto the metal film 18 via the adhesive layer 19.
Next, by removing the plating electrode metal foil 22 by etching, the surface of the insulating protective layer resin sheet 21A is exposed as shown in FIG. 44, and further, the insulating protective layer resin sheet 21A is exposed. As shown in FIG. 45, the surface electrode portion 17a of each electrode structure 17 is made to protrude from the surface of the insulating protective layer resin sheet 21A by reducing the thickness by performing an etching process.
Thereafter, by performing an etching process on the insulating protective layer resin sheet 21A and the insulating film resin sheet 16A, as shown in FIG. 46, a plurality of insulating protective layers 21 and insulating films 16 independent from each other are formed. Thereby, a plurality of contact films 15 are formed. And a sheet-like probe is obtained by arrange | positioning and fixing a holding member (illustration omitted) to the peripheral part in the frame board 11 back surface.

Further, in the above-described sheet-like probe 10, the insulating protective layer 21 is not essential, and as shown in FIG. 47, the surface of the insulating film 16 and the surface of the holding portion 17d of the electrode structure 17 are exposed. May be.
As shown in FIG. 48, the holding portion 17 d of the electrode structure 17 may be provided in a state where a part thereof is embedded in the insulating film 16 and protrudes from the surface of the insulating film 16.
As shown in FIG. 49, the electrode structure 17 may have a configuration in which a holding portion is not provided.
Further, as shown in FIG. 50, the holding portion 17d of the electrode structure 17 may be provided on the surface of the insulating film.
In addition, as shown in FIG. 51, the electrode structure 17 in the sheet-like probe 10 includes a conical surface electrode portion 17a, a back electrode portion 17b, and a surface electrode portion 17a having a diameter that decreases from the distal end toward the proximal end. Continuously extending from the base end through the insulating film 16 in the thickness direction and connected to the back electrode portion 17b, the short-circuit portion 17c and the base end portion of the front surface electrode portion 17a continuously along the surface of the insulating film And a holding portion 17d extending outward.

  Specific examples of the present invention will be described below, but the present invention is not limited to these examples.

[Production of test wafer]
A total of 393 square integrated circuits L each having a size of 8 mm × 8 mm were formed on a silicon wafer having a diameter of 8 inches. Each integrated circuit formed on the wafer has an electrode region to be inspected at the center thereof, and each of the electrode regions to be inspected has a rectangular shape having a vertical dimension of 200 μm and a horizontal dimension of 70 μm. The electrodes 7 to be inspected are arranged in a row in the horizontal direction at a pitch of 120 μm. The total number of electrodes to be inspected on the entire wafer is 15720, and all the electrodes 7 to be inspected are electrically insulated from each other. Hereinafter, this wafer is referred to as “test wafer W1”.
Further, instead of electrically insulating all the electrodes to be inspected from each other, out of the 40 electrodes to be inspected of the integrated circuit, every two of the 40 electrodes to be inspected from the outermost electrode to be inspected are electrically connected to each other. 393 integrated circuits having the same configuration as that of the test wafer W1 were formed on the wafer except that the test wafers W1 were connected. Hereinafter, this wafer is referred to as “test wafer W2.”

Example 1
[Manufacture of sheet probe]
A frame plate (11) having the following specifications was produced according to the configuration shown in FIG.
The frame plate (11) has a circular shape with a diameter of 22 cm and a thickness of 25 μm, and has 393 openings (12) corresponding to the inspected electrode regions of the integrated circuit in the test wafer W1. The dimension of the opening (12) is 6.4 mm × 1.6 mm.

A metal foil for plating electrode (22) and a holding part forming metal made of copper each having a diameter of 20 cm and a thickness of 4 μm are formed on both surfaces of a resin sheet (21A) made of polyimide having a diameter of 20 cm and a thickness of 25 μm. A laminate (21B) in which the foil (23) was integrally laminated was prepared (see FIG. 34).
A protective film is formed on the entire surface of the metal foil for plating electrode (22) with a protective seal made of polyethylene terephthalate having a thickness of 25 μm for the laminate (21B), and the back surface of the metal foil for holding portion formation (23). On the entire surface, a resist film was formed in which 15720 circular pattern holes having a diameter of 55 μm were formed according to the pattern corresponding to the pattern of the electrode to be inspected formed on the test wafer W1. Here, in the formation of the resist film, the exposure process is performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development process is repeated twice by immersing in a developer composed of a 1% aqueous sodium hydroxide solution for 40 seconds. Was done by.
Next, the holding part forming metal foil (23) is subjected to an etching treatment using a ferric chloride etching solution under the conditions of 50 ° C. and 30 seconds, thereby forming the holding part forming metal foil (23). 15720 openings (23K) communicating with the pattern holes of the resist film were formed (see FIG. 35).
Then, for the insulating protective layer resin sheet (21A), using an amine-based polyimide etchant (manufactured by Toray Engineering Co., Ltd., “TPE-3000”), by performing an etching process at 80 ° C. for 10 minutes, In the insulating protective layer resin sheet (21A), 15720 through-holes (21H) communicating with the openings (23K) of the holding portion forming metal foil (23) were formed (see FIG. 36).
Each of the through holes (21H) has a tapered shape having a diameter that decreases from the back surface to the surface of the insulating protective layer resin sheet (21A), and the opening diameter on the back surface side is 55 μm, and the opening diameter on the front surface side. Was 20 μm (average value).

  Next, the resist film was removed from the laminate (21B) by immersing the laminate (21B) in a 45 ° C. sodium hydroxide solution for 2 minutes. Then, the through-hole (23H) of the metal foil for holding part formation (23) and its periphery are closed with a dry film resist (Hitachi Chemical Co., Ltd .: Photec RY-3210) having a thickness of 10 μm with respect to the laminate (21B). A resist pattern is formed, and the holding portion forming metal foil (23) is etched using ferric chloride-based etching solution under the conditions of 50 ° C. and 30 seconds, thereby forming the holding portion forming metal foil ( A holding part (17d) was formed around the through hole (23H) of 23) (see FIG. 37). Here, in the formation of the resist pattern, the exposure process is performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development process is performed by repeating the operation of immersing in a developer composed of a 1% aqueous sodium hydroxide solution for 40 seconds twice. Went by. And the resist pattern was removed from the laminated body (21B) by immersing the laminated body (21B) in 45 degreeC sodium hydroxide solution for 2 minutes.

Next, a thermoplastic polyimide sheet having a diameter of 20.4 cm and a thickness of 25 μm on the insulating protective layer resin sheet (21A) in the laminate (21B) (trade name “ESPANEX” manufactured by Nippon Steel Chemical Co., Ltd.) ) Are stacked as a resin sheet for insulating film (16A), and a metal foil (18B) for forming a back electrode portion made of 42 alloy having a diameter of 22 cm and a thickness of 25 μm is formed on the insulating film resin sheet (16A). By stacking and heat-pressing at 165 ° C., 40 kgf / cm ² for 1 hour, the insulating protective layer resin sheet (21A), the insulating film resin sheet (16A), and the back electrode part forming metal The foil (18B) was integrated (see FIG. 38).
Then, a resist in which 15720 circular pattern holes having a diameter of 60 μm are formed on the surface of the metal foil (18B) for forming the back electrode portion according to the pattern corresponding to the pattern of the electrode to be inspected formed on the test wafer W1. A film was formed.
Next, the back electrode part forming metal foil (18B) is etched using ferric chloride-based etching solution under the conditions of 50 ° C. and 30 seconds, thereby forming the back electrode part forming metal foil (18B). ) 15720 openings (18K) communicating with the pattern holes of the resist film were formed (see FIG. 39).
Thereafter, the insulating film resin sheet (16A) is subjected to an etching treatment under conditions of 80 ° C. and 10 minutes using an amine-based polyimide etching solution (manufactured by Toray Engineering Co., Ltd., “TPE-3000”). 15720 through holes communicating with the insulating film resin sheet (16A) through the opening (18H) of the back electrode portion forming metal foil (18B) and the through hole (21H) of the insulating protective layer resin sheet (21A), respectively. (17H) was formed (see FIG. 40)).
Each of the through-holes (17H) has a tapered shape that decreases in diameter from the back surface to the surface of the insulating film resin sheet (16A), and has an opening diameter of 60 μm on the back surface side and an opening diameter on the front surface side. It was 40 μm (average value).
Then, the resist film is removed from the metal foil for forming the back electrode part (18B), and openings (18H) of the metal foil for forming the back electrode part (18B) are newly formed on the surface of the metal foil for forming the back electrode part (18B). And a resist film having 15720 pattern holes with dimensions of 60 μm × 150 μm.

Next, the laminate (21B) is immersed in a plating bath containing nickel sulfamate and subjected to electrolytic plating using the metal foil for plating electrode (22) as an electrode, and the through hole of the resin sheet for insulating protective layer (21A) (21H), by filling metal in the through holes (17H) of the resin sheet for insulating film (16A) and the pattern holes of the resist film, the surface electrode part (17a), the short circuit part (17c) and the back surface side An electrode part (17b) was formed, and thus an electrode structure (17) was formed (see FIG. 41).
Thereafter, the laminate (21B) is immersed in a 45 ° C. sodium hydroxide solution for 2 minutes to remove the resist film from the back electrode part forming metal foil (18B). A patterned resist film for etching was formed on the foil (18B).
Then, each of the electrode structures (17) is bonded to each other by subjecting the metal foil (18B) for forming the back electrode part to an etching treatment using a ferric chloride etching solution at 50 ° C. for 30 seconds. While separating, the metal film (18) of a required form was formed in the back surface of the resin sheet for insulating films (16A) (refer FIG. 42). Thereafter, the resist film was removed from the metal foil (22) for the plating electrode and the metal film (18), and the frame plate (11) was bonded onto the metal film (18) via the adhesive layer (19) (FIG. 43). reference).

Next, the frame plate (11), the insulating film resin sheet (16A), and the back electrode part (17b) of the electrode structure (17) are covered with a resist film, and the protective film is applied from the surface of the metal foil (22) for the plating electrode. Is removed, and the metal foil for plating electrode (22) is etched using ferric chloride-based etching solution under the conditions of 50 ° C. and 30 seconds, so that the metal foil for plating electrode (22) is removed. Was removed (see FIG. 44).
Thereafter, the insulating protective layer resin sheet (21A) is subjected to an etching treatment using an amine-based polyimide etching solution (“TPE-3000” manufactured by Toray Engineering Co., Ltd.) at 80 ° C. for 6 minutes. By setting the thickness of the protective layer resin sheet (21A) to 25 μm to 5 μm, the surface electrode portion (17a) of the electrode structure (17) is protruded from the surface of the insulating protective layer resin sheet (21A). (See FIG. 45). Then, the resist film is removed from the frame plate (11), the resin sheet for insulating film (16A), and the back electrode portion (17b) of the electrode structure (17) by being immersed in a sodium hydroxide solution at 45 ° C. for 2 minutes. did.

Next, a patterned resist film was formed on the surface of the surface electrode portion (17a) of the electrode structure (17) and the surface of the insulating protective layer resin sheet (21A) using a dry film resist having a thickness of 25 μm. Thereafter, an amine-based polyimide etching solution (“TPE-3000” manufactured by Toray Engineering Co., Ltd.) is used for the insulating protective layer resin sheet (21A) and the insulating film resin sheet (16A) at 80 ° C. for 10 minutes. By performing the etching process under the conditions, a plurality of insulating protective layers (21) and insulating films (16) separated from each other are formed, and contact films are formed in the openings (12) of the frame plate (11). (15) was formed (see FIG. 46). Then, by immersing in an aqueous solution of sodium hydroxide at 45 ° C. for 2 minutes. The resist film was removed from the surface electrode portion (17a) and the insulating protective layer (21) of the electrode structure (17).
Then, a silicon-based thermosetting adhesive (manufactured by Shin-Etsu Chemical Co., Ltd .: product name 1300T) is applied to the peripheral edge of the frame plate (11), and the silicon-based thermosetting adhesive is applied to the frame plate at a temperature of 150 ° C. A ring-shaped holding member made of silicon nitride having an outer diameter of 220 mm, an inner diameter of 205 mm, and a thickness of 2 mm is disposed, and the frame plate (11) and the holding member are held at 180 ° C. for 2 hours while being pressed. Thus, the holding member was bonded to the frame plate (11), and thus the sheet-like probe was manufactured.

The specifications of the obtained sheet-like probe 10 are as follows.
The frame plate has a disk shape with a diameter of 22 cm and a thickness of 25 μm, and is made of 42 alloy. The number of openings of the frame plate is 393, the horizontal dimension is 6.4 mm, and the vertical dimension is 1.6 mm.
The material of the insulating film and the insulating protective layer in each of the contact films is polyimide, the vertical and horizontal dimensions are 7.5 mm × 7.5 mm, the insulating film thickness is 25 μm, and the insulating protective layer thickness is 5 μm.
The number of electrode structures in each contact film is 40 (15720 in total), and they are arranged in a row at a pitch of 120 μm in the lateral direction.
The surface electrode portion in the electrode structure has a truncated cone shape, and the tip end portion has a diameter of 20 μm and the base end portion has a diameter of 55 μm. The back electrode portion has a rectangular plate shape with a vertical and horizontal dimension of 60 μm × 150 μm and a thickness of 14 μm. The short-circuit portion has a truncated cone shape, and the diameter on the front surface side is 40 μm and the diameter on the back surface side is 60 μm. The holding part has a circular ring shape and an outer diameter of 80 μm.
Further, the gap d between the level of the back surface of the frame plate and the level of the electrode surface of the back surface electrode portion in the sheet-like probe is 15 μm.

[Manufacture of anisotropically conductive connectors]
(1) Preparation of magnetic core particles:
Magnetic core particles were prepared as follows using commercially available nickel particles (manufactured by Westim, “FC1000”).
Nissin Engineering Co., Ltd. air classifier "Turbo Classifier TC-15N" uses 2kg of nickel particles, specific gravity is 8.9, air volume is 2.5m ³ / min, rotor speed is 2,250rpm, classification point is Classification was performed under the conditions of 15 μm and a nickel particle supply rate of 60 g / min, and 0.8 kg of nickel particles having a particle diameter of 15 μm or less were collected. Further, 0.8 kg of the nickel particles were used under the conditions of a specific gravity of 8.9, an air volume of 2.5 m ³ / min, a rotor rotational speed of 2,930 rpm, a classification point of 10 μm, and a nickel particle supply speed of 30 g / min. Classification was performed, and 0.5 kg of nickel particles were collected.
The obtained nickel particles had a number average particle size of 7.4 μm, a particle size variation coefficient of 27%, a BET specific surface area of 0.46 × 103 m ² / kg, and a saturation magnetization of 0.6 Wb / m ² . .
This nickel particle is referred to as “magnetic core particle [A]”.

(2) Preparation of conductive particles:
100 g of magnetic core particles [A] were put into a treatment tank of a powder plating apparatus, and further 2 L of a 0.32N hydrochloric acid aqueous solution was added and stirred to obtain a slurry containing magnetic core particles [A]. The slurry was stirred at room temperature for 30 minutes to perform acid treatment of the magnetic core particles [A], and then left to stand for 1 minute to precipitate the magnetic core particles [A] and remove the supernatant.
Next, 2 L of pure water was added to the acid-treated magnetic core particles [A], stirred at room temperature for 2 minutes, and then allowed to stand for 1 minute to precipitate the magnetic core particles [A] and remove the supernatant. . This operation was further repeated twice to wash the magnetic core particles [A].
Then, 2 L of a gold plating solution having a gold content of 20 g / L is added to the magnetic core particles [A] that have been subjected to acid treatment and washing treatment, and the temperature in the treatment layer is raised to 90 ° C. and stirred. Thus, a slurry was prepared. In this state, the magnetic core particles [A] were subjected to gold displacement plating while stirring the slurry. Thereafter, the slurry was left standing to cool to precipitate the particles, and the supernatant was removed to prepare conductive particles.
2 L of pure water was added to the conductive particles thus obtained, stirred for 2 minutes at room temperature, and then allowed to stand for 1 minute to precipitate the conductive particles and remove the supernatant.
This operation was further repeated twice, and then 2 L of pure water heated to 90 ° C. was added and stirred, and the resulting slurry was filtered through filter paper to collect conductive particles. And this electroconductive particle was dried with the dryer set to 90 degreeC.
The obtained conductive particles had a number average particle diameter of 7.3 μm, a BET specific surface area of 0.38 × 10 3 m ² / kg, (mass of gold forming the coating layer) / (mass of magnetic core particles [A]). The value was 0.3.
This conductive particle is referred to as “conductive particle (a)”.

(3) Production of frame plate:
In accordance with the configuration shown in FIG. 16, a frame plate (41) having 393 openings (42) formed corresponding to each inspection electrode region of the test wafer W1 was manufactured under the following conditions.
The frame plate (41) is made of Kovar (linear thermal expansion coefficient 5 × 10 ⁻⁶ / K), has a diameter of 8 inches, a thickness of 60 μm, and the lateral dimension of the opening (42) is 5400 μm. And the vertical dimension is 320 μm.
A circular air inflow hole is formed at the center position between the vertically adjacent openings, and the diameter thereof is 1000 μm.

(4) Preparation of molding material:
30 parts by weight of conductive particles [a] were added to and mixed with 100 parts by weight of addition-type liquid silicone rubber, and then subjected to defoaming treatment under reduced pressure to prepare a molding material.
In the above, the addition-type liquid silicone rubber used is a two-component type composed of a liquid A and a liquid B each having a viscosity of 250 Pa · s. The cured product has a compression set of 5% and a durometer A hardness. Is 32 and the tear strength is 25 kN / m.
The characteristics of the addition-type liquid silicon rubber and its cured product were measured as follows.
(A) The viscosity of the addition-type liquid silicone rubber was measured at 23 ± 2 ° C. using a B-type viscometer.
(B) The compression set of the cured silicone rubber was measured as follows.
The liquid A and the liquid B of the two-pack type addition type liquid silicone rubber were stirred and mixed at an equal ratio. Next, this mixture is poured into a mold, and after the defoaming treatment is performed on the mixture under reduced pressure, a curing treatment is performed at 120 ° C. for 30 minutes, so that the thickness is 12.7 mm and the diameter is 29 mm. A cylindrical body made of a cured silicone rubber was prepared, and post-curing was performed on the cylindrical body at 200 ° C. for 4 hours.
The cylindrical body thus obtained was used as a test piece, and compression set at 150 ± 2 ° C. was measured in accordance with JIS K 6249.
(C) The tear strength of the cured silicone rubber was measured as follows.
A sheet having a thickness of 2.5 mm was prepared by performing a curing treatment and post-cure of the addition-type liquid silicon rubber under the same conditions as in (b) above. A crescent-shaped test piece was produced by punching from this sheet, and the tear strength at 23 ± 2 ° C. was measured according to JIS K 6249.
(D) The durometer A hardness is a value at 23 ± 2 ° C. in accordance with JIS K 6249 using five sheets prepared in the same manner as in (c) above and using the obtained stack as a test piece. Was measured.

Using the frame plate produced in (3) above and the molding material prepared in (4) above, according to the method described in JP-A-2002-324600, the frame plate is disposed in each of its openings, An anisotropic conductive connector was manufactured by forming 393 elastic anisotropic conductive films fixed and supported at the opening edge.
In the above, the curing treatment of the molding material layer was performed under conditions of 100 ° C. and 1 hour while applying a 2T magnetic field in the thickness direction by an electromagnet.
The obtained elastic anisotropic conductive film will be described in detail. Each of the elastic anisotropic conductive films has a horizontal dimension of 6.0 mm and a vertical dimension of 1.2 mm. The outer shape in the plane direction is a size that can be received in each of the openings (size: 6.4 mm × 1.6 mm) of the frame plate in the sheet-like probe. In the elastic anisotropic conductive film, 40 connection conductive parts are arranged in a row in the horizontal direction at a pitch of 120 μm in a state of being insulated from each other by an insulating part.
Each of the connecting conductive portions has a horizontal dimension of 40 μm, a vertical dimension of 200 μm, a thickness of 130 μm, a protruding height of the protruding portion 38 of 15 μm, and an insulating portion thickness of 100 μm.
A non-connection conductive portion is disposed between the connection conductive portion located on the outermost side in the lateral direction and the frame plate.
Each of the non-connecting conductive portions has a horizontal dimension of 60 μm, a vertical dimension of 200 μm, and a thickness of 130 μm.
The thickness of each supported portion of the elastic anisotropic conductive film (one thickness of the bifurcated portion) is 20 μm.
Moreover, when the content rate of the electroconductive particle in the electroconductive part for a connection of each elastic anisotropic conductive film was investigated, it was about 25% in the volume fraction about all the electroconductive parts for a connection.
Further, the gap h between the level of the surface of the frame plate in the anisotropic conductive connector and the level of the end surface on the surface side of the connecting conductive portion of the elastic anisotropic conductive film is 35 μm. The ratio h / d of the gap d (= 15 μm) between the level of the back surface of the frame plate and the level of the electrode surface of the back surface electrode portion in the probe is 2.3.

[Production of circuit board for inspection]
Using a ceramic substrate (linear thermal expansion coefficient: 4.8 × 10 ⁻⁶ / K) as a substrate material, an inspection circuit board on which an inspection electrode was formed according to the pattern of the inspection electrode on the test wafer W1 was produced. The inspection circuit board has a rectangular shape with a total dimension of 30 cm × 30 cm, and the inspection electrode has a horizontal dimension of 60 μm and a vertical dimension of 200 μm. This test circuit board is referred to as “test circuit board T1”.

[Test 1]
At room temperature (25 ° C.), the test wafer W1 is placed on a test stand, and a sheet-like probe is placed on the surface of the test wafer W1. The anisotropic conductive connector was positioned on the sheet probe so that each of the connecting conductive portions was positioned on the back electrode portion of the sheet probe. On this anisotropic conductive connector, the inspection circuit board T1 was positioned and aligned so that each of the inspection electrodes was positioned on the connection conductive portion of the anisotropic conductive connector. Further, the inspection circuit board T1 was pressed downward with a load of 160 kg (an average load applied to each electrode structure was about 10 g).
A voltage is sequentially applied to each of the 15720 test electrodes of the test circuit board T1, and the electrical resistance between the test electrode to which the voltage is applied and the other test electrodes is measured by the sheet-like probe. It was measured as the electrical resistance of the electrode structure (hereinafter referred to as “insulation resistance”), and the ratio of measurement points at which the insulation resistance at all measurement points was 10 MΩ or less (hereinafter referred to as “insulation failure ratio”) was determined.
Here, when the insulation resistance is 10 MΩ or less, it is practically difficult to use it for electrical inspection of an integrated circuit formed on a wafer.
The results are shown in Table 1.

[Test 2]
At room temperature (25 ° C.), the test wafer W2 is placed on a test table equipped with an electric heater, and a sheet-like probe is placed on the surface of the test wafer W2 so that each surface electrode portion of the test wafer W2 is covered with the test wafer W2. Align and arrange so that it is located on the inspection electrode, and align the anisotropic conductive connector on this sheet-like probe so that each of the conductive parts for connection is located on the back electrode part of the sheet-like probe Arranged. On this anisotropic conductive connector, the circuit board for inspection T1 is aligned and disposed so that each of the inspection electrodes is positioned on the conductive portion for connection of the anisotropic conductive connector. Further, the inspection circuit board T1 was pressed downward with a load of 160 kg (an average load applied to each electrode structure was about 10 g).
And about 15720 test electrodes of circuit board T1 for inspection, between a sheet-like probe, an anisotropic conductive connector, and two test electrodes electrically connected mutually via test wafer W2 Electrical resistance was measured sequentially.
Then, a half value of the measured electric resistance value is an electric resistance (hereinafter referred to as “conduction resistance”) between the inspection electrode of the inspection circuit board T1 and the inspection target electrode of the test wafer W2. As a result, the ratio of measurement points at which the conduction resistance at all measurement points was 1Ω or more (hereinafter referred to as “connection failure ratio”) was obtained.
This operation is referred to as “operation (1)”.
Next, the pressure on the inspection circuit board T1 was released, and then the temperature of the test stand was raised to 125 ° C. Further, the test circuit board T1 is left to stand until the temperature is stabilized, and then the test circuit board T1 is pressed downward with a load of 160 kg (an average load applied to 171 electrode structures is about 10 g), and the above operation (1) is performed. Similarly, the connection failure ratio was obtained.
This operation is referred to as “operation (2)”.
Next, the pressure on the inspection circuit board T1 was released, and then the test table was cooled to room temperature (25 ° C.).
This operation is referred to as “operation (3)”.
And said operation (1), operation (2), and operation (3) were made into 1 cycle, and it performed 100 cycles continuously in total. The time required for one cycle was about 1.5 hours.
Here, when the conduction resistance is 1Ω or more, it is practically difficult to use the integrated circuit formed on the wafer for electrical inspection.
The results are shown in Table 2.

<Comparative example 1>
In Example 1, the sheet-like probe, the anisotropic conductive connector, and the inspection circuit were similarly used except that the frame plate in the sheet-like probe had a size of each opening of 6.4 mm × 0.32 mm. Substrates were manufactured and Test 1 and Test 2 were performed. In Comparative Example 1, the outer shape in the surface direction (size: 6.0 mm × 1.2 mm) of the anisotropic anisotropic conductive film of the anisotropic conductive connector is received in each of the openings of the frame plate in the sheet-like probe. Is not.

<Reference Example 1>
In Example 1, a sheet-like probe, an anisotropic conductive connector, and a circuit board for inspection were manufactured in the same manner except that a frame plate having a thickness of 50 μm was used as the frame plate in the sheet-like probe. 2 was performed. In Reference Example 1, the gap d between the level of the back surface of the frame plate in the sheet-like probe and the level of the electrode surface of the back electrode portion is 40 μm, and the level of the surface of the frame plate in the anisotropic conductive connector and the elastic anisotropic conductivity. The gap h from the level of the surface side end face of the conductive portion for connecting the film is 35 μm, and the ratio h / d is 0.88.

<Reference Example 2>
In Example 1, a sheet-like probe, an anisotropic conductive connector, and a circuit board for inspection were manufactured in the same manner except that a frame plate having a thickness of 100 μm was used as the frame plate in the sheet-like probe. 2 was performed. In Reference Example 2, the gap d between the level of the back surface of the frame plate in the sheet-like probe and the level of the electrode surface of the back electrode portion is 90 μm, and the level of the surface of the frame plate in the anisotropic conductive connector and the elastic anisotropic conductivity. The gap h from the level of the surface side end face of the conductive part for connecting the film is 35 μm, and the ratio h / d is 0.4.
The results are shown in Tables 1 and 2.

It is sectional drawing for description which shows the 1st example of the probe member which concerns on this invention. It is sectional drawing for description which expands and shows the principal part of the probe member of a 1st example. It is a top view of the sheet-like probe in the probe member of the 1st example. It is a top view which expands and shows the contact film | membrane of the sheet-like probe in the probe member of a 1st example. It is sectional drawing for description which expands and shows the structure of the contact film of the sheet-like probe in the probe member of a 1st example. It is a top view which shows the frame board of the sheet-like probe in the probe member of a 1st example. It is sectional drawing for description which shows the structure of the laminated body used in order to manufacture a sheet-like probe. It is sectional drawing for description which shows the state by which the protective tape is arrange | positioned at the peripheral part of the frame board. It is sectional drawing for description which shows the state by which the contact bonding layer was formed in the metal foil for back surface electrode parts in the laminated body shown in FIG. It is sectional drawing for description which shows the state by which the frame board was adhere | attached on the metal foil for back surface electrode parts in a laminated body. It is sectional drawing for description which shows the state by which the through-hole was formed in the resin sheet for insulating films in a laminated body. It is sectional drawing for description which shows the state by which the short circuit part and the surface electrode part were formed in the resin sheet for insulating films. It is sectional drawing for description which shows the state from which a part of contact bonding layer was removed and the metal foil for back surface electrode parts was exposed. It is sectional drawing for description which shows the state in which the back surface electrode part was formed. It is sectional drawing for description which shows the state in which the insulating film was formed. It is a top view which shows the anisotropically conductive connector in the probe member of the 1st example. It is a top view which shows the 2nd example of the probe member which concerns on this invention. It is sectional drawing for description which shows the structure of the probe member of a 2nd example. It is a top view which shows the frame board of the sheet-like probe in the probe member of a 2nd example. It is a top view which shows the anisotropically conductive connector in the probe member of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card of a 1st example. It is a top view which shows the circuit board for a test | inspection in the probe card of a 1st example. It is explanatory drawing which expands and shows the lead electrode part in the circuit board for a test | inspection. It is sectional drawing for description which shows the structure of the 2nd example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card of a 2nd example. It is a top view which shows the circuit board for a test | inspection in the probe card of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the wafer inspection apparatus which concerns on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the wafer inspection apparatus of a 1st example. It is sectional drawing for description which expands and shows the connector in the wafer inspection apparatus of the 1st example. It is sectional drawing for description which shows the structure of the 2nd example of the wafer inspection apparatus which concerns on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the wafer inspection apparatus of the 2nd example. It is sectional drawing for description which shows the structure of the other example of the sheet-like probe in the probe member which concerns on this invention. It is sectional drawing for description which shows the structure of the laminated body used in order to manufacture the sheet-like probe shown in FIG. It is sectional drawing for description which shows the state by which opening was formed in the metal foil for holding | maintenance part formation of a laminated body. It is sectional drawing for description which shows the state by which the through-hole was formed in the resin sheet for insulation protective layers of a laminated body. It is sectional drawing for description which shows the state in which the holding part was formed in the back surface of the resin sheet for insulation protective layers of a laminated body. It is sectional drawing for description which shows the state by which the resin sheet for insulating films and the metal foil for back surface electrode part formation were laminated | stacked on the back surface of the resin sheet for insulation protective layers of a laminated body. It is sectional drawing for description which shows the state by which opening was formed in the metal foil for back surface electrode part formation. It is sectional drawing for description which shows the state by which the through-hole was formed in the resin sheet for insulating films. It is sectional drawing for description which shows the state in which the electrode structure was formed in the laminated body. It is sectional drawing for description which shows the state by which the metal film was formed in the back surface of the resin sheet for insulating films. It is sectional drawing for description which shows the state by which the frame board was adhere | attached through the contact bonding layer on the metal film. It is sectional drawing for description which shows the state from which the metal foil for plating electrodes was removed from the laminated body. It is sectional drawing for description which shows the state which the surface electrode part of the electrode structure protruded from the surface of the insulation protective layer. It is sectional drawing for description which shows the state in which the insulating film and the insulation protective layer were formed. It is sectional drawing for description which shows the structure of the modification of the sheet-like probe shown in FIG. It is sectional drawing for description which shows the structure of the other modification of the sheet-like probe shown in FIG. It is sectional drawing for description which shows the structure of the other modification of the sheet-like probe shown in FIG. It is sectional drawing for description which shows the structure of the other modification of the sheet-like probe shown in FIG. It is sectional drawing for description which shows the structure of the other modification of the sheet-like probe shown in FIG. It is sectional drawing for description which shows the positional relationship of the sheet-like probe and anisotropically conductive connector in the conventional probe card.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe member 2 Controller 3 Input / output terminal 3R Input / output terminal part 4 Connector 5 Wafer mounting base 6 Wafer 7 Electrode 10 Sheet-like probe 11 Frame plate 12 Opening 14 Holding member 15 Contact film 15A Laminated body 16 Insulating film 16A Insulating Membrane resin sheet 17 Electrode structure 17H Through-hole 17a Front electrode portion 17b Back electrode portion 17c Short-circuit portion 17d Holding portion 18 Metal film 18A Back surface electrode portion metal foil 18B Back surface electrode portion forming metal foil 18K Opening 19 Adhesive layer 20 Protection Tape 21 Insulating protective layer 21A Insulating protective layer resin sheet 21B Laminate 21H Through hole 22 Metal foil for plating electrode 23 Metal foil for holding portion 23K Opening 30 Probe card 31 Circuit board for inspection 32 First substrate element 33 Lead electrode 33R Lead electrode part 34 Holder 34K Opening 34S Step part 35 First Substrate element 36 Inspection electrode 36R Inspection electrode part 37 Reinforcing member 40 Anisotropic conductive connector 41 Frame plate 42 Opening 50 Elastic anisotropic conductive film 51 Functional part 52 Connecting conductive part 53 Insulating part 54 Protruding part 55 Supported part 80 Sheet-like probe 81 Frame plate 85 Contact film 86 Electrode structure 87 Back electrode part 90 Anisotropic conductive connector 95 Elastic anisotropic conductive film 96 Conductive part P Conductive particle

Claims (7)

A frame plate made of metal in which a plurality of openings are formed corresponding to electrode regions where electrodes to be inspected are arranged in all or some of the integrated circuits formed on the wafer to be inspected, and the surface of the frame plate In addition, each of the contact films is arranged on and supported by an insulating film made of a flexible resin on the surface electrode portion and the back surface exposed on the surface of the insulating film. A plurality of electrode structures formed by connecting exposed back electrode portions by a short-circuit portion extending in the thickness direction of the insulating film, and a sheet-like probe arranged according to a pattern corresponding to the electrode to be inspected;
The sheet-like probe comprises: a frame plate having a plurality of openings formed corresponding to the electrode regions; and a plurality of elastic anisotropic conductive films arranged and supported on the frame plate so as to close one opening. An anisotropic conductive connector disposed on the back surface of
Each of the openings of the frame plate in the sheet-like probe has a size capable of receiving the outer shape in the surface direction of the elastic anisotropic conductive film of the anisotropic conductive connector. .   The elastic anisotropic conductive film is composed of a conductive portion for connecting magnetic particles contained in an elastic polymer material, which is arranged according to a pattern corresponding to the electrode to be inspected, and a highly elastic material that insulates them from each other. The probe member for wafer inspection according to claim 1, further comprising an insulating portion made of a molecular substance.   The gap between the level of the surface of the frame plate in the anisotropic conductive connector and the level of the end surface on the surface side of the connecting conductive portion of the elastic anisotropic conductive film is h, and the level of the back surface of the frame plate and the back electrode portion in the sheet-like probe 3. The wafer inspection probe member according to claim 2, wherein h / d is 1.2 or more, where d is a gap with the level of the electrode surface.   The probe member for wafer inspection according to any one of claims 1 to 3, wherein the thickness of the frame plate in the sheet-like probe is 10 to 200 µm. 5. The frame plate of the sheet-like probe and the frame plate of the anisotropic conductive connector are each formed of a material having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less. A probe member for wafer inspection according to any one of the above.   An inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the electrodes to be inspected in all or some of the integrated circuits formed on the wafer to be inspected, and disposed on the surface of the inspection circuit board A wafer inspection probe card comprising the wafer inspection probe member according to any one of claims 1 to 5. A wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
A wafer inspection apparatus comprising the wafer inspection probe card according to claim 6.

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