JP2002203879A - Probe equipment for wafer testing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact probe equipment for a wafer testing with a low manufacturing cost not giving damages to an electrode under test, capable of surely achieving an electrical connection to each of electrodes under test even for a wafer wherein a large number of electrodes are arranged in high density and holding a satisfactory electrical connection state in stability even when repeatedly used. SOLUTION: The equipment comprises a testing circuit board wherein a large number of testing electrodes are entirely formed thereon according to a pattern corresponding to a pattern of integrated circuit electrodes on the wafer being subjected to test, and a contact member contacting to the integrated circuit electrodes on the wafer arranged on one side of the testing circuit board. The contacting member includes an anisotropically conductive sheet wherein at least a portion which contacts to the electrodes on the wafer contains conductive grains in the state of orienting in a thickness direction in an insulating elastic high molecular material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a wafer inspection probe device used for performing an electrical inspection of each of a plurality of integrated circuits formed on a wafer.

[0002]

2. Description of the Related Art In recent years, with the demand for miniaturization of a semiconductor integrated circuit device, a TAB mounting method or a flip chip mounting method has been widely used as a method of mounting a semiconductor chip instead of a mounting method by wire bonding. . Then, gold or solder (lead-tin alloy) is placed on a flat pad electrode on the surface of the semiconductor chip subjected to such a mounting method.
A protruding electrode (bump) is formed. Such a protruding electrode is usually formed on a pad electrode in a state of a wafer on which a large number of integrated circuits to be semiconductor chips are formed, and thereafter, the wafer is cut to obtain a semiconductor chip having a protruding electrode. Can be

[0003] On the other hand, in an electrical inspection of a semiconductor chip, a potential defect of the semiconductor chip is expressed,
2. Description of the Related Art A burn-in test for inspecting electrical characteristics of a semiconductor chip in a state where the semiconductor chip is heated to a high temperature is performed. However, since semiconductor chips are very small and inconvenient to handle, it takes a long time to individually perform an electrical inspection of the semiconductor chips, and the inspection cost is considerably large. Get higher. For these reasons, a WLBI (Wafer Level Bur) for inspecting electrical characteristics of a plurality of semiconductor chips in a wafer state.
(n-in) tests are of interest. Recently, a CSP (Chip) which is an ultra-small semiconductor integrated circuit device has been developed.
A technique for manufacturing a CSP (scale package) in a wafer state has been developed.
It would be very advantageous in terms of manufacturing if a WLBI test could be performed.

In such an electrical inspection of a wafer, the electrical connection between the integrated circuit and the tester on the wafer to be inspected is made in accordance with the electrode to be inspected of the integrated circuit. A probe device in which probes are arranged is used. As such a probe device,
2. Description of the Related Art Conventionally, there has been known an arrangement in which inspection probes formed of pins or blades are arranged. If a probe device in which test probes are arranged corresponding to all the electrodes to be tested on the wafer is used as the wafer test probe device, the electrical test of all the integrated circuits on the wafer is performed by one test process. Therefore, the inspection time and the inspection cost can be reduced.

However, in order to manufacture such a wafer inspection probe device, it is necessary to arrange a very large number of inspection probes, so that the wafer inspection probe device is large and extremely expensive. Further, when the pitch of the electrodes to be inspected is small, it becomes difficult to fabricate the probe device for wafer inspection itself. In addition, a wafer on which an integrated circuit is formed generally has a large warp. Particularly, when the electrode to be inspected of the wafer to be inspected is a protruding electrode, the height of the protruding electrode Therefore, it is practically difficult to bring each of the test probes of the probe device into stable and reliable contact with a large number of electrodes to be tested on the wafer. Further, when the protruding electrodes on the wafer are formed of solder, the protruding electrodes have a considerably low hardness when heated to a high temperature, and are therefore applied by an inspection probe comprising pins or blades. When heated to a high temperature in a pressurized state, there is a problem that the protruding electrode is deformed or broken.

In order to solve such a problem, a wafer inspection probe device for performing an electrical inspection of a wafer on which an integrated circuit is formed corresponds to a pattern of an electrode to be inspected of a wafer to be inspected on one side. A sheet-like connector in which a test circuit board having a large number of test electrodes formed according to a pattern, and a resin sheet made of a fluororesin or the like, on which a large number of metal conductors extending through the thickness direction thereof are arranged in a lattice pattern. (For example, a product name “GORE Mate” manufactured by Gore and Associates, Inc.) has been proposed. According to such a configuration, as compared with a wafer inspection probe device in which a large number of inspection probes each composed of a pin or a blade are arranged, a wafer inspection probe device that is small and has a small manufacturing cost can be obtained. It is possible to perform an electrical inspection of the integrated circuit by a single inspection process, and since the resin sheet in the sheet-like connector has flexibility, a large number of projecting electrodes are It is possible to achieve a stable electrical connection without damage.

However, in such a wafer inspection probe device, a considerably large pressing force is required to achieve stable electrical connection to all the electrodes to be inspected on the wafer. Since the metal conductor of the sheet-like connector is not an elastic body, if the metal conductor is pressed by the electrode to be inspected of the wafer to be inspected or heated to a high temperature in a state of being pressed, the metal conductor is deformed or broken. As a result, when the sheet-shaped connector is used repeatedly, a good electrical connection state cannot be obtained. Therefore, every time one wafer is inspected, the sheet connector must be replaced with a new one, resulting in a problem that the inspection cost increases.
Such a problem is particularly remarkable when the electrode to be inspected is a protruding electrode.

[0008]

DISCLOSURE OF THE INVENTION The present invention has been made based on the above circumstances, and its object is to provide:
In a wafer inspection probe device for performing an electrical inspection of each integrated circuit on a wafer on which an integrated circuit is formed, a large number of electrodes to be inspected are densely arranged without damaging the electrodes to be inspected. Wafers
Electrical connection to each of the electrodes to be inspected can be reliably achieved, and even when used repeatedly many times, a good electrical connection state is stably maintained. To provide a wafer inspection probe device having a small size.

[0009]

SUMMARY OF THE INVENTION A wafer inspection probe apparatus according to the present invention is a wafer inspection apparatus for performing an electrical inspection of each integrated circuit on a wafer on which a plurality of integrated circuits each having a large number of electrodes are formed. A probe device, comprising: a test circuit board on which a number of test electrodes are formed on one surface according to a pattern corresponding to an electrode pattern of an integrated circuit on a wafer to be tested; and A contact member that is in contact with an electrode of an integrated circuit on the wafer, wherein the contact member has at least a portion that is in contact with the electrode on the wafer and has a conductive property in an insulating elastic polymer material. It is characterized by comprising an anisotropic conductive sheet containing particles oriented in the thickness direction.

The wafer inspection probe device of the present invention is particularly useful when the electrodes on the wafer to be inspected are protruding electrodes. Further, in the probe device for wafer inspection of the present invention, the anisotropic conductive sheet includes a plurality of conductive path forming portions extending in a thickness direction in which conductive particles are densely contained, and a plurality of conductive path forming portions between the conductive path forming portions. May be constituted by an insulating portion interposed therebetween. In addition, a conductive rigid layer may be formed on the surface of the conductive path forming portion of the anisotropic conductive sheet, and such a conductive rigid layer is preferably a metal layer or a conductive organic material layer.

In the anisotropic conductive sheet according to the present invention, the contact member has a frame plate having an opening, and the anisotropic conductive sheet is provided in the opening of the frame plate. It is preferable that the peripheral edge of the conductive sheet is fixed to the opening edge of the frame plate. In such a wafer inspection probe device, a plurality of openings are preferably formed in the frame plate, and an anisotropic conductive sheet is preferably disposed in each of the openings. It is preferable that the integrated circuit is formed for each integrated circuit on the wafer to be inspected. Further, it is preferable that the linear thermal expansion coefficient of the frame plate in the contact member is 1.5 × 10 ⁻⁴ / K or less.

[0012]

According to the above arrangement, since the portion of the contact member that contacts the electrode to be inspected of the wafer is made of an elastic anisotropic conductive sheet, the electrode to be inspected is pressed by the contact member. It will not be damaged even if heated under pressure or under pressure. Moreover, since the anisotropic conductive sheet is elastically deformed in the thickness direction when pressed against the wafer, the protruding height of the wafer having a large warp or when the electrode to be inspected is a protruding electrode. Even on a wafer on which a large number of protruding electrodes having unevenness are arranged at a high density, it is possible to stably and reliably achieve electrical connection to each of the electrodes to be inspected.
Further, even if the anisotropic conductive sheet is pressurized by the electrode to be inspected or heated to a high temperature in a pressurized state, it does not easily break down, even when used repeatedly many times, A good electrical connection state is stably maintained. Further, since it is not necessary to arrange a large number of inspection probes composed of pins or blades, it is possible to reduce the manufacturing cost, and the inspection circuit board and the contact member are each small in thickness, and Since a stable electrical connection can be obtained with a small pressing force, a large-sized pressurizing mechanism is not required, so that the size of the entire wafer inspection apparatus can be reduced.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a probe device for wafer inspection according to the present invention will be described in detail. [First Embodiment] FIG. 1 is an explanatory sectional view showing a configuration of a wafer inspection probe device according to a first embodiment of the present invention. This probe device for wafer inspection has an inspection circuit board 10 on which a large number of inspection electrodes 11 are arranged on one surface (upper surface in the drawing) according to a pattern corresponding to a pattern of a protruding electrode which is an electrode to be inspected on a wafer to be inspected. And a contact member 20 disposed on one surface of the inspection circuit board 10 and in contact with a wafer to be inspected.
It is composed of

On the other surface (lower surface in the figure) of the circuit board 10 for inspection, a large number of connection terminals 12 connected to the tester are formed in accordance with an appropriate pattern. Is electrically connected to each of the inspection electrodes 11 via the internal wiring 13 in the circuit board 10 for use. The base material of the inspection circuit board 10 is not particularly limited as long as it has heat resistance, and various types of materials commonly used as a substrate material of a printed circuit board can be used. , Glass fiber reinforced epoxy resin, glass fiber reinforced polyimide resin,
Resin materials such as glass fiber reinforced bismaleimide triazine resin, polyimide resin, aramid non-woven cloth reinforced epoxy resin, aramid non-woven cloth reinforced polyimide resin, aramid non-woven cloth reinforced bismaleimide triazine resin,
Examples of the material include a ceramic material, a glass material, and a metal core material. However, it is preferable to use a material whose coefficient of linear thermal expansion is equal or similar to that of a material constituting a wafer to be inspected. In particular,
When the wafer is made of silicon, the coefficient of linear thermal expansion is 1.5 × 10 ⁻⁴ / K or less, particularly 1 × 10 ⁻⁷ to
It is preferable to use one having 1 × 10 ⁻⁴ / K.

The contact member 20 is a ring-shaped frame plate 40 having a circular opening 41 formed in the center except for the peripheral edge.
And a planar circular anisotropic conductive sheet 30 having conductivity in the thickness direction. The anisotropic conductive sheet 30 The peripheral portion is arranged in a state of being fixed to the opening edge of the frame plate 40. The anisotropic conductive sheet 30 is configured by containing conductive particles in a state of being oriented in the thickness direction in an insulating elastic polymer material. In this example, as shown in FIG. The conductive particles P are contained in the base material made of the elastic polymer material in a state in which the conductive particles P are aligned in the thickness direction of the anisotropic conductive sheet 30 and dispersed in the plane direction.

The thickness of the anisotropic conductive sheet 30 is 0.1 to
It is preferably 1 mm, more preferably 0.15
０．５0.5 mm. By using the anisotropic conductive sheet 30 having such a thickness, when the anisotropic conductive sheet 30 is pressed against the protruding electrodes of the wafer, variations in the protruding height of the protruding electrodes are absorbed. As a result, a good electrical connection can be obtained more reliably, and required insulation between adjacent protruding electrodes is reliably achieved. The thickness of the frame plate 40 is not particularly limited as long as its shape is maintained and the anisotropic conductive sheet 30 can be held, for example, 0.03 to 1 mm,
Preferably it is 0.1 to 0.25 mm.

The elastic polymer material forming the anisotropic conductive sheet 30 is preferably a heat-resistant polymer material having a crosslinked structure. Various materials can be used as the curable polymer substance forming material that can be used to obtain such a crosslinked polymer substance, and specific examples thereof include silicone rubber, polybutadiene rubber, natural rubber, and polyisoprene. Rubber, styrene-butadiene copolymer rubber, conjugated diene rubbers such as acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, styrene-butadiene-diene block copolymer rubber, styrene-isoprene block copolymer and the like Block copolymer rubbers and their hydrogenated products, chloroprene, urethane rubber, polyester rubber, epichlorohydrin rubber, ethylene-
Examples include propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, and soft liquid epoxy rubber. Among them, silicone rubber is preferred in terms of moldability and electrical properties.

Preferably, the silicone rubber is obtained by crosslinking or condensing a liquid silicone rubber. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be any of a condensation type, an addition type, a vinyl group or a hydroxyl group-containing one. Good. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, and methylphenyl vinyl silicone raw rubber.

Among these, liquid group-containing silicone rubber (vinyl group-containing polydimethylsiloxane)
Is usually obtained by subjecting dimethyldichlorosilane or dimethyldialkoxysilane to hydrolysis and condensation in the presence of dimethylvinylchlorosilane or dimethylvinylalkoxysilane, for example, followed by fractionation by repeated dissolution-precipitation. Also,
The liquid silicone rubber containing a vinyl group at both ends is anionically polymerized with a cyclic siloxane such as octamethylcyclotetrasiloxane in the presence of a catalyst. , The amount of cyclic siloxane and the amount of polymerization terminator). Here, as a catalyst for the anionic polymerization, an alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or a silanolate solution thereof can be used. The reaction temperature is, for example, 80 to 130 ° C. Such a vinyl group-containing polydimethylsiloxane preferably has a molecular weight Mw (weight average molecular weight in terms of standard polystyrene; the same applies hereinafter) of 10,000 to 40,000. From the viewpoint of the heat resistance of the obtained anisotropic conductive sheet 30, the molecular weight distribution index (refers to the value of the ratio Mw / Mn of the weight average molecular weight Mw in terms of standard polystyrene and the number average molecular weight Mn in terms of standard polystyrene).
same as below. ) Is preferably 2 or less.

On the other hand, a liquid silicone rubber containing hydroxyl groups (hydroxyl group-containing polydimethylsiloxane) is usually prepared by hydrolyzing dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylhydrochlorosilane or dimethylhydroalkoxysilane. And condensation reaction, for example,
It is obtained by performing fractionation by repeating precipitation.
The cyclic siloxane is anionically polymerized in the presence of a catalyst, and a polymerization terminator such as dimethylhydrochlorosilane, methyldihydrochlorosilane or dimethylhydroalkoxysilane is used, and other reaction conditions (for example, the amount of the cyclic siloxane and the polymerization termination) are used. Amount of agent)
Can also be obtained by appropriately selecting Here, as a catalyst for the anionic polymerization, an alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or a silanolate solution thereof can be used. The reaction temperature is, for example, 80 to 130 ° C.

Such a hydroxyl group-containing polydimethylsiloxane has a molecular weight Mw of 10,000 to 400.
00 is preferred. From the viewpoint of the heat resistance of the obtained anisotropic conductive sheet 30, those having a molecular weight distribution index of 2 or less are preferable. In the present invention, either one of the above-mentioned vinyl group-containing polydimethylsiloxane and hydroxyl group-containing polydimethylsiloxane can be used, or both can be used in combination.

The polymer substance forming material may contain a curing catalyst for curing the polymer substance forming material. As such a curing catalyst, an organic peroxide, a fatty acid azo compound, a hydrosilylation catalyst, or the like can be used. Specific examples of the organic peroxide used as the curing catalyst include benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide, and ditertiary butyl peroxide. Specific examples of the fatty acid azo compound used as the curing catalyst include azobisisobutyronitrile and the like. Specific examples of those which can be used as a catalyst for the hydrosilylation reaction include chloroplatinic acid and salts thereof, a siloxane complex containing a platinum-unsaturated group, a complex of vinylsiloxane and platinum, and platinum and 1,3-divinyltetramethyldisiloxane. And a complex of triorganophosphine or phosphite with platinum, acetylacetate platinum chelate, and a complex of cyclic diene and platinum. The amount of the curing catalyst used is appropriately selected in consideration of the type of the polymer substance-forming material, the type of the curing catalyst, and other curing treatment conditions.
It is 3 to 15 parts by weight based on 100 parts by weight of the polymer substance forming material.

As the conductive particles P constituting the anisotropic conductive sheet 30, it is preferable to use those exhibiting magnetism from the viewpoint that the particles can be easily oriented by a method described later. Specific examples of such conductive particles exhibiting magnetism include particles of metals exhibiting magnetism such as iron, nickel, and cobalt, or particles of alloys thereof, or particles containing these metals, or core particles of these particles. The core particles are obtained by plating the surface of the core particles with a metal having good conductivity such as gold, silver, palladium, and rhodium, or inorganic particles or polymer particles such as nonmagnetic metal particles or glass beads as core particles. And those obtained by plating the surface of the core particles with a conductive magnetic material such as nickel and cobalt, or those obtained by coating both the conductive magnetic material and a metal having good conductivity on the core particles. . Among them, it is preferable to use nickel particles as core particles, the surfaces of which are plated with a metal having good conductivity such as gold or silver. Means for coating the surface of the core particles with the conductive metal is not particularly limited, but may be, for example, electroless plating.

When the conductive particles P are formed by coating the surface of a core particle with a conductive metal, from the viewpoint of obtaining good conductivity, the coverage of the conductive metal on the particle surface (core The ratio of the conductive metal coating area to the particle surface area) is preferably 40% or more, more preferably 45% or more, and particularly preferably 47 to 95%.
It is. The amount of the conductive metal coating is 2.5% of the core particles.
To 50% by weight, more preferably 3% by weight.
To 30% by weight, more preferably 3.5 to 25% by weight,
Particularly preferably, it is 4 to 20% by weight. When the conductive metal to be coated is gold, the coating amount is 3% of the core particle.
To 30% by weight, more preferably 3.5 to 25% by weight, still more preferably 4 to 20% by weight.
It is. When the conductive metal to be coated is silver, the coating amount is preferably 3 to 50% by weight, more preferably 4 to 40% by weight of the core particles.

The particle diameter of the conductive particles P is 1 to 50.
0 μm, more preferably 2 to 40 μm.
0 μm, more preferably 5 to 300 μm, particularly preferably 10 to 150 μm. The particle size distribution (Dw / Dn) of the conductive particles P is preferably 1 to 10, more preferably 1 to 7, and still more preferably 1 to 7.
5, particularly preferably 1 to 4. By using the conductive particles P satisfying such a condition, the obtained anisotropic conductive sheet 30 can be easily deformed under pressure. Enough electrical contact is obtained. The shape of the conductive particles P is not particularly limited. However, since the conductive particles P can be easily dispersed in the polymer substance-forming material, they have a spherical shape, a star shape, or a shape in which these are aggregated. It is preferably a lump formed by the secondary particles.

The water content of the conductive particles P is preferably at most 5%, more preferably at most 3%, further preferably at most 2%, particularly preferably at most 1%. By using the conductive particles P satisfying such conditions, it is possible to prevent or suppress the occurrence of air bubbles in the molding material layer when the molding material layer is cured in the manufacturing method described below.

The conductive particles P whose surfaces have been treated with a coupling agent such as a silane coupling agent can be used as appropriate. When the surface of the conductive particles is treated with the coupling agent, the adhesion between the conductive particles P and the elastic polymer material is increased, and as a result, the obtained anisotropic conductive sheet 30 is used repeatedly. , The durability is high. The amount of the coupling agent to be used is appropriately selected within a range that does not affect the conductivity of the conductive particles P, but the coverage of the coupling agent on the surface of the conductive particles P (the coupling ratio with respect to the surface area of the conductive core particles). (The ratio of the coating area of the ring agent) is preferably 5% or more, more preferably 7 to 100%, more preferably 10 to 100%, and particularly preferably 20 to 10%.
The amount is 0%.

Such conductive particles P are 10 to 60% by volume, preferably 1 to 10% by volume, based on the polymer substance-forming material.
It is preferably used in a ratio of 5 to 50%. When this ratio is less than 10%, the anisotropic conductive sheet 30 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained anisotropic conductive sheet 30 tends to be brittle, and the elasticity required for the anisotropic conductive sheet 30 may not be obtained.

The polymer material forming material may contain an inorganic filler such as ordinary silica powder, colloidal silica, airgel silica, alumina or the like, if necessary. By including such an inorganic filler,
The thixotropic property of the obtained molding material is ensured, the viscosity is increased, and the dispersion stability of the conductive particles P is improved, and the strength of the anisotropic conductive sheet 30 obtained by the curing treatment is increased. The use amount of such an inorganic filler is not particularly limited, but when used in an excessively large amount, in the production method described later, it becomes impossible to sufficiently achieve the orientation of the conductive particles by a magnetic field, Not preferred.

As a material forming the frame plate 40,
Various materials such as metal materials, ceramic materials, and resin materials can be used, and specific examples thereof include iron, copper,
Metal materials such as nickel, chromium, cobalt, magnesium, manganese, molybdenum, indium, lead, palladium, titanium, tungsten, aluminum, gold, platinum, silver, etc. or metal materials such as alloys or alloy steels combining two or more of these, nitriding Ceramic materials such as silicon, silicon carbide, and alumina, resin materials such as aramid non-woven cloth reinforced epoxy resin, aramid non-woven cloth reinforced polyimide resin, and aramid non-woven cloth reinforced bismaleimide triazine resin, have a linear thermal expansion coefficient. It is preferable to use a material which is equal to or approximate to the linear thermal expansion coefficient of the material constituting the wafer to be inspected. Specifically, when the material constituting the wafer is silicon,
The coefficient of linear thermal expansion is 1.5 × 10 ⁻⁴ / K or less, especially 3 × 1
It is preferable to use one having 0 ^-6 to 8 × 10 ^-6 / K,
Specific examples include invar-type alloys such as invar,
Elinvar-type alloys such as Elinvar, metal materials such as Super Invar, Kovar, and 42 alloy, and aramid non-woven cloth reinforced organic resin materials.

The contact member 20 as described above can be manufactured, for example, as follows. First, a molding material is prepared in which conductive particles exhibiting magnetism are dispersed in a polymer material forming material that becomes an elastic polymer material by a curing treatment. Then, as shown in FIG. 3, a mold 50 for forming an anisotropic conductive sheet having a plate-shaped upper mold 51 made of a ferromagnetic material and a plate-shaped lower mold 55 made of a ferromagnetic material is prepared. The frame plate 40 is disposed in the cavity of the mold 50, and the prepared molding material is applied to a region including the opening 41 and the opening edge of the frame plate 40 to form the molding material layer 30A. Here, as the ferromagnetic material constituting the upper mold 51 and the lower mold 55 in the mold 50,
Iron, iron-nickel alloy, iron-cobalt alloy, nickel,
A ferromagnetic metal such as cobalt can be used.

Thereafter, for example, a pair of electromagnets (not shown) are arranged on the upper surface of the upper die 51 and the lower surface of the lower die 55, and by operating the electromagnets, a parallel magnetic field is applied in the thickness direction of the molding material layer 30A. Let it. As a result, in the molding material layer 30A, the conductive particles P dispersed in the molding material layer 30A are oriented so as to be arranged in the thickness direction of the molding material layer 30A as shown in FIG. And
In this state, by curing the molding material layer 30A, the anisotropic conductive sheet 30 is formed in the opening 41 of the frame 40 in a state where it is fixed to the opening edge of the frame 40. 20 are manufactured.

In the above description, the intensity of the parallel magnetic field applied to the molding material layer 30A is preferably such that the average is 0.02 to 2 Tesla. The curing treatment of the molding material layer 30A is as follows.
Although it is appropriately selected depending on the material used, it is usually performed by a heat treatment. When the curing treatment of the molding material layer 30A is performed by heating, a heater may be provided to the electromagnet. The specific heating temperature and heating time are appropriately selected in consideration of the type of the polymer substance forming material constituting the molding material layer 30A, the time required for the movement of the conductive particles P, and the like. Further, the curing treatment of the molding material layer 30A can be performed after stopping the action of the parallel magnetic field, but it is preferable to perform the hardening treatment while the parallel magnetic field is still applied.

In such a wafer inspection probe device, inspection of a wafer is performed as follows.
As shown in FIG. 5, the wafer inspection probe device is disposed above the wafer mounting table 5 and the contact member 2 is in contact with the wafer mounting table 5.
0 are arranged so as to face each other, and the wafer 1 to be inspected is placed on the wafer mounting table 5 with the protruding electrodes 2 being the electrodes to be inspected facing upward and each of the protruding electrodes 2 is used for inspection. It is arranged so as to be located directly below each of the inspection electrodes 11 of the circuit board 10. Next, for example, the inspection circuit device 10
Is pressed downward by a suitable pressing means, so that the anisotropic conductive sheet 30 in the contact member 20 comes into contact with the protruding electrode 2 of the wafer 1 and is further pressed by the protruding electrode 2. State. As a result, the anisotropic conductive sheet 30 is elastically deformed so as to be compressed in the thickness direction according to the protruding height of the protruding electrodes 2 of the wafer 1. A conductive path extending in the thickness direction of the anisotropic conductive sheet 30 is formed by the conductive particles between the protruding electrode 2 and the test electrode 11 of the test circuit board 10. As a result, the protruding electrode of the wafer 1 is formed. 2 and the inspection electrode 11 of the inspection circuit board 10 are electrically connected. Then, the wafer 1 is heated to a predetermined temperature,
In this state, a required electrical inspection is performed on the wafer 1.

According to the above-described wafer inspection probe device, the portion of the contact member 20 that contacts the protruding electrode 2 of the wafer 1 is formed by the anisotropic conductive sheet 30 having elasticity. The electrode 2 is not damaged even if it is pressed by the contact member 20 or heated in a state where the electrode 2 is pressed. Moreover, the anisotropic conductive sheet 3
0 indicates that the wafer 1 is elastically deformed in the thickness direction when pressed against the wafer 1, so that a large warp is generated on the wafer 1 or a large number of protruding electrodes 2 having uneven protrusion heights are arranged at high density. With respect to the wafer 1, the electrical connection to the protruding electrode 2 can be stably and reliably achieved. Further, the anisotropic conductive sheet 30 does not easily break down even if it is pressed by the protruding electrodes 2 or is heated to a high temperature in the pressed state. Also, a good electrical connection state is stably maintained. In addition, since it is not necessary to arrange a large number of inspection probes composed of pins or blades, it is possible to reduce the manufacturing cost, and the inspection circuit board 10 and the contact member 20 each have a small thickness. In addition, since a stable electric connection can be obtained with a small pressing force, a large-sized pressurizing mechanism is not required, so that the size of the entire wafer inspection apparatus can be reduced. Further, since the anisotropic conductive sheet 30 is fixed to the edge of the opening of the frame plate 40, even in the case of receiving a thermal history, deformation in the surface direction due to thermal expansion is suppressed by the frame plate 40. In particular, by using a material having a coefficient of linear thermal expansion equal to or close to the coefficient of linear thermal expansion of the material forming the wafer 1 to be inspected as a material for forming the frame plate 40, good electrical properties can be obtained even in a burn-in test. The connection state can be maintained.

[Second Embodiment] FIG. 6 is an explanatory sectional view showing, on an enlarged scale, the structure of the main part of a wafer inspection probe device according to a second embodiment of the present invention. In this probe device for wafer inspection, the anisotropic conductive sheet 30 in the contact member 20 is composed of a plurality of conductive particles P having magnetism densely filled in an insulating elastic polymer material and extending in the thickness direction. Each of these conductive path forming portions 31 is in a state of being insulated from each other by an insulating portion 32 made of an insulating elastic polymer material. They are arranged according to a pattern corresponding to the pattern of the electrodes. Then, the contact member 20
Are arranged such that each of the conductive path forming portions 31 of the anisotropic conductive sheet 30 is located on the test electrode 11 of the test circuit board 10. Other configurations are the same as those of the first embodiment.

The diameter of the conductive path forming portion 31 is appropriately set in accordance with the diameter of the protruding electrode of the wafer to be inspected. It is preferably 50 to 150%, more preferably 80 to 110% of the diameter of the electrode. The conductive particles P have a volume fraction of 10 to 10 in the conductive path forming portion 31.
It is preferably used in a proportion of 60%, more preferably 15 to 50%. If this ratio is less than 10%, the conductive path forming portion 31 having a sufficiently small electric resistance value may not be obtained. On the other hand, this ratio is 60%
When it exceeds, the obtained conductive path forming portion 31 tends to be fragile, and the elasticity required for the conductive path forming portion 31 may not be obtained in some cases.

The contact member 20 as described above can be manufactured, for example, as follows. First, a molding material is prepared in which conductive particles exhibiting magnetism are dispersed in an elastic body forming material that becomes an elastic polymer substance by a curing treatment.
Then, as shown in FIG. 7, the frame plate 40 is arranged in the cavity of the mold 50 for forming the anisotropic conductive sheet, and in the region including the opening 41 and the opening edge in the frame plate 40, The prepared molding material is applied to form the molding material layer 30A. In the molding material layer 30A, the conductive particles P are in a state of being dispersed in the molding material layer 30A. Here, the mold 50 will be specifically described. The mold 50 is configured such that an upper mold 51 and a lower mold 55 that is a pair with the upper mold 51 are arranged to face each other. A cavity is formed between the cavity 55 and the upper surface. In the upper die 51, a ferromagnetic layer 53 is formed on the lower surface of the ferromagnetic substrate 52 according to a pattern opposite to the arrangement pattern of the conductive path forming portions 31 of the anisotropic conductive sheet 30 to be manufactured. A non-magnetic layer 54 is formed in a portion other than the magnetic layer 53. On the other hand, in the lower mold 55, on the upper surface of the ferromagnetic substrate 56,
The ferromagnetic layer 57 is formed according to the same pattern as the arrangement pattern of the conductive path forming portions 31 of the anisotropic conductive sheet 30 to be manufactured.
Is formed, and a non-magnetic layer 58 is formed in a portion other than the ferromagnetic layer 57.

As the material forming the ferromagnetic substrates 52 and 56 in each of the upper mold 51 and the lower mold 55, a ferromagnetic metal such as iron, iron-nickel alloy, iron-cobalt alloy, nickel, and cobalt is used. Can be. The ferromagnetic substrates 52 and 56 preferably have a thickness of 0.1 to 50 mm and have a smooth surface, are chemically degreased, and are mechanically polished. preferable. Further, as a material forming the ferromagnetic layers 53 and 57 in each of the upper mold 51 and the lower mold 55, a ferromagnetic metal such as iron, an iron-nickel alloy, an iron-cobalt alloy, nickel, and cobalt may be used. it can. The ferromagnetic layers 53 and 57 preferably have a thickness of 10 μm or more. When the thickness is 10 μm or more, a magnetic field having a sufficient intensity distribution can be applied to the molding material layer 30A, and as a result, the molding material layer 30A
The conductive particles P can be gathered at a high density in a portion to be the conductive path forming portion 31 in the above, and the conductive path forming portion 31 having good conductivity can be obtained.

As a material for forming the nonmagnetic layers 54 and 58 in each of the upper mold 51 and the lower mold 55, a nonmagnetic metal such as copper, a heat-resistant polymer material, or the like can be used. Since the nonmagnetic layers 54 and 58 can be easily formed by a photolithography technique, a polymer material cured by radiation can be preferably used. As the material, for example, an acrylic dry film is used. A photoresist such as a resist, an epoxy-based liquid resist, or a polyimide-based liquid resist can be used.

Thereafter, the ferromagnetic substrate 5 in the upper die 51
For example, a pair of electromagnets or permanent magnets is disposed on the upper surface of the lower mold 55 and the lower surface of the ferromagnetic substrate 56 in the lower mold 55, and a magnetic field having an intensity distribution with respect to the molding material layer 30A, that is, the ferromagnetic material of the upper mold 51 Layer 53 and corresponding lower mold 5
A magnetic field having an intensity higher than that of the other portion between the fifth ferromagnetic layer 57 and the other portions acts in the thickness direction of the molding material layer 30A. As a result, in the molding material layer 30A, as shown in FIG. 8, the conductive particles P dispersed in the molding material layer 30A become the ferromagnetic layer 53 of the upper mold 51 and the corresponding lower mold They are gathered in a portion to be the conductive path forming portion 31 located between the ferromagnetic material layer 55 and the ferromagnetic material layer 55 and are oriented so as to be arranged in the thickness direction of the molding material layer 30A. Then, in this state, the molding material layer 30A
Is cured to form a ferromagnetic layer 53 of the upper die 51.
And a ferromagnetic layer 57 of the lower mold 55 corresponding to the conductive path forming portion, in which the conductive particles P are contained in the elastic polymer material so as to be aligned in the thickness direction. An anisotropic conductive sheet 30 comprising an insulating portion 32 made of a polymer elastic material interposed between the conductive path forming portions 31 is fixed in an opening 41 of the frame 40 at the edge of the opening. Thus, the contact member 20 is manufactured. In the above, the strength of the magnetic field applied to the molding material layer 30A is 0.02 to 2 on average between the ferromagnetic layer 53 of the upper die 51 and the corresponding ferromagnetic layer 57 of the lower die 55. Tesla is preferred.

According to such a wafer inspection probe device, the same effects as those of the above-described wafer inspection probe device according to the first embodiment can be obtained, and the wafer inspection probe device is arranged corresponding to the protruding electrodes of the wafer. Many conductive path forming portions 31
Are formed in a state in which they are insulated from each other by the insulating portion 32, so that the insulating property between the adjacent protruding electrodes is reliably maintained, and as a result, a required electrical connection state is more reliably obtained.

[Third Embodiment] FIG. 9 is an explanatory sectional view showing the configuration of a wafer inspection probe apparatus according to a third embodiment of the present invention. In this wafer inspection probe device, the contact member 20 has a frame plate 40 in which a plurality of openings 41 are formed, and an anisotropic conductive sheet 30 is disposed in each of these openings 41. As shown in FIG. 10, the opening 41 of the frame plate 40 is formed for each integrated circuit on the wafer to be inspected. As the material forming the frame plate 40, the same material as that of the first embodiment can be used. The anisotropic conductive sheet 30 in the contact member 20 has the configuration shown in FIG. 2, that is, the anisotropic conductive sheet 30 in which the conductive particles P are contained so as to be aligned in the thickness direction over the entire surface of the sheet. 6, that is, a structure including a large number of conductive path forming portions extending in the thickness direction in which the conductive particles P are densely contained and an insulating portion interposed between these conductive path forming portions. You may.

According to such a wafer inspection probe device, the same effects as those of the above-described wafer inspection probe device according to the first embodiment can be obtained, and the frame 40 can be used.
Has a plurality of openings 41 for each integrated circuit in the wafer, and the anisotropic conductive sheet 30 is disposed in each of the openings 41.
May have a small area. Therefore, even when a thermal history is received, since the absolute amount of thermal expansion in each plane direction of the anisotropic conductive sheet 30 is small, a good electrical connection state is stably maintained even for a large-area wafer. be able to.

[Fourth Embodiment] FIG. 11 is an explanatory cross-sectional view showing, in an enlarged manner, the configuration of a main part of a wafer inspection probe device according to a fourth embodiment of the present invention. In this wafer inspection probe device, a conductive rigid layer 35 is integrally provided on the surface of the conductive path forming portion 31 of the anisotropic conductive sheet 30 in the contact member 20. Other configurations of the anisotropic conductive sheet 30 are the same as those of the above-described second embodiment. Further, the frame plate 40 may have the configuration shown in FIG. 1, that is, the frame plate 40 in which one opening 41 is formed at the center except for the periphery.
The configuration shown in FIG. 9, that is, a configuration in which a plurality of openings 41 are formed for each integrated circuit in a wafer to be inspected may be used.

As the conductive rigid layer 35, a metal layer or a conductive organic material layer can be used. As a material for forming the metal layer, copper, gold, rhodium, platinum, palladium, nickel, an alloy thereof, or the like can be used. The metal layer may be formed of a laminate of different metals. As a material for forming the conductive organic material layer, a material in which a resin material such as an epoxy resin and a conductivity-imparting substance such as carbon black are contained in a resin material can be used. The thickness of the conductive rigid layer 35 is, for example, 5 to 500 μm, and preferably 20 to 100 μm. As a method for forming such a conductive rigid layer 35, the conductive rigid layer 35
Is a metal layer, a method of selectively forming the metal layer on the surface of the conductive path forming portion 31 by photolithography and plating, and a method of photo-etching the metal layer formed on the entire surface of the anisotropic conductive sheet 30 And the like. In addition, the conductive rigid layer 3
In the case where 5 is a conductive organic material layer, a method of applying a material containing a conductivity-imparting substance to a liquid curable resin material on the surface of the conductive path forming portion 31 and curing the material is used. Can be.

According to such a wafer inspection probe device, the same effects as those of the first and second embodiments can be obtained, and the anisotropic conductive sheet 30 can be obtained.
Of the conductive rigid layer 3 on the surface of the conductive path forming portion 31 in FIG.
5, the more stable electrical connection to the protruding electrodes of the wafer to be inspected is obtained. Further, even when an oxide film is formed on the surface of the protruding electrode of the wafer to be inspected, the conductive rigid layer 35
As a result, the oxide film can be broken through, so that the required electrical connection can be reliably achieved. Further, since the conductive path forming portion 31 formed of the elastic polymer material does not directly contact the protruding electrode of the wafer to be inspected, the conductive polymer forming the conductive path forming portion 31 The protruding electrode is not contaminated by the low molecular weight component contained in the electrode.

[0048]

According to the probe apparatus for wafer inspection of the present invention, the portion of the contact member that contacts the electrode to be inspected is formed of an elastic anisotropic conductive sheet. Is not damaged even if it is pressurized by the contact member or heated in a pressurized state. Moreover, since the anisotropic conductive sheet is elastically deformed in the thickness direction when pressed against the wafer, the protruding height of the wafer having a large warp or when the electrode to be inspected is a protruding electrode. Even on a wafer on which a large number of protruding electrodes having unevenness are arranged at high density, the electrical connection to the protruding electrodes can be stably and reliably achieved. Furthermore, even if the anisotropic conductive sheet is pressurized by the protruding electrodes or heated to a high temperature in a pressurized state, it does not easily break down, even when used repeatedly many times, A good electrical connection state is stably maintained. Further, since it is not necessary to arrange a large number of inspection probes composed of pins or blades, it is possible to reduce the manufacturing cost, and the inspection circuit board and the contact member are each small in thickness, and Since a stable electrical connection can be obtained with a small pressing force, a large-sized pressurizing mechanism is not required, so that the size of the entire wafer inspection apparatus can be reduced.

[Brief description of the drawings]

FIG. 1 is an explanatory sectional view showing the configuration of a wafer inspection probe device according to a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view illustrating a main part of the wafer inspection probe device shown in FIG.

FIG. 3 is a cross-sectional view illustrating a method of manufacturing a contact member according to the first embodiment. In the manufacturing method, a frame plate is disposed in a mold for forming an anisotropic conductive sheet and a molding material layer is formed in an opening of the frame plate. FIG. 3 is an explanatory cross-sectional view showing a state in which the cover is folded.

FIG. 4 is an explanatory cross-sectional view showing a state in which a magnetic field is applied to a molding material layer in a mold in a thickness direction in manufacturing the contact member according to the first embodiment.

FIG. 5 is an explanatory cross-sectional view showing a state where an electrical inspection of a wafer is performed by the wafer inspection probe device shown in FIG. 1;

FIG. 6 is an explanatory cross-sectional view showing, on an enlarged scale, a configuration of a main part of a wafer inspection probe device according to a second embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a method of manufacturing a contact member according to a second embodiment, in which a frame plate is arranged in a mold for forming an anisotropic conductive sheet and a molding material layer is formed in an opening of the frame plate. FIG. 3 is an explanatory cross-sectional view showing a state in which the cover is folded.

FIG. 8 is an explanatory cross-sectional view showing a state in which a magnetic field having an intensity distribution in a thickness direction is applied to a molding material layer in a mold in manufacturing the contact member according to the second embodiment.

FIG. 9 is an explanatory sectional view showing a configuration of a wafer inspection probe device according to a third embodiment of the present invention.

10 is a plan view of a contact member in the wafer inspection probe device shown in FIG.

FIG. 11 is an explanatory cross-sectional view showing, on an enlarged scale, a configuration of a main part of a wafer inspection probe device according to a fourth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Protruding electrode 5 Wafer mounting table 10 Inspection circuit board 11 Inspection electrode 12 Connection terminal 13 Internal wiring 20 Contact member 30 Anisotropic conductive sheet 30A Molding material layer 31 Conductive path forming part 32 Conductive path forming part 35 Conductivity Rigid layer 40 Frame plate 41 Opening 50 Mold 51 Upper mold 52 Ferromagnetic substrate 53 Ferromagnetic layer 54 Nonmagnetic layer 55 Lower mold 56 Ferromagnetic substrate 57 Ferromagnetic layer 58 Nonmagnetic layer P Conductive particles

Claims (9)

[Claims] 1. A wafer inspection probe device for performing an electrical inspection of each of integrated circuits having a plurality of integrated circuits each having a large number of electrodes, the integration being performed on a wafer to be inspected. An inspection circuit board having a large number of inspection electrodes formed on one surface thereof in accordance with a pattern corresponding to a circuit electrode pattern, and an electrode of an integrated circuit on the wafer disposed on one surface of the inspection circuit board. A contact member, wherein at least a portion of the wafer that is in contact with the electrode contains conductive particles oriented in the thickness direction in an insulating elastic polymer material. A wafer inspection probe device comprising a conductive sheet. 2. The wafer inspection probe device according to claim 1, wherein the electrode on the wafer to be inspected is a protruding electrode. 3. The anisotropic conductive sheet comprises a large number of conductive path forming portions extending in the thickness direction in which conductive particles are densely contained, and an insulating portion interposed between these conductive path forming portions. 3. The probe device for wafer inspection according to claim 1, wherein: 4. The wafer inspection probe device according to claim 3, wherein a conductive rigid layer is formed on a surface of the conductive path forming portion of the anisotropic conductive sheet. 5. The probe device according to claim 4, wherein the conductive rigid layer is a metal layer or a conductive organic material layer. 6. The contact member includes a frame plate having an opening formed therein, and the anisotropic conductive sheet has a peripheral portion of the anisotropic conductive sheet at an opening edge of the frame plate at an opening of the frame plate. The wafer inspection probe device according to any one of claims 1 to 5, wherein the probe device is arranged so as to be fixed to the portion. 7. A plurality of openings are formed in the frame plate,
7. The wafer inspection probe device according to claim 6, wherein an anisotropic conductive sheet is disposed in each of the openings. 8. The wafer inspection probe device according to claim 7, wherein the opening of the frame plate is formed for each integrated circuit in the inspection target wafer. 9. Linear thermal expansion of a frame plate in a contact member
Coefficient is 1.5 × 10 ^-Four/ K or less
A wafer inspection device according to any one of claims 6 to 8.
Probe device.