JP2006108621A5 - - Google Patents

Claims (21)

A solid state element;
A power receiving and supplying unit that mounts the solid-state element and receives and supplies power; and
Sealing the front Stories solid element, _P 2 _{O 5} containing a 55 wt% ～62Wt% of _P 2 _{O 5} by weight%, and _Al 2 _{O 3} of 5 wt% ～12Wt%, and 20 wt% 40 wt% of ZnO solid state device characterized by having a glass sealing portion consisting -Al ₂ O ₃ -ZnO-based low melting glass. The low melting point glass is B ₂ O ₃ : 5 wt% or less , Li ₂ O: 3 wt% or less , Na ₂ O: 3 wt% or less , K ₂ O: 3 wt% or less, MgO: 5 wt% or less , CaO: to 10wt%, SrO: to 10wt%, BaO: 20 wt% or less, _Nb 2 _O 5: 20wt% or less, _TiO 2: 20 wt% or less, _Bi 2 _O 3: 20wt% or less, _Gd 2 _O 3: 5wt% or less, _2. The solid state device according to claim 1, further comprising at least one of a composition of WO ₃ : 5 wt% or less and ZrO ₂ : 5 wt% or less . A solid state element;
A power receiving and supplying unit that mounts the solid-state element and receives and supplies power; and
The pre-Symbol solid element for sealing, and _B 2 _{O 3} of 19 wt% 30 wt% by weight, and SiO ₂ of 0.5 wt% 15 wt%, and Na ₂ O of 1.5 wt% 8 wt%, 44 wt % and 60 wt% of ZnO, and the glass sealing part consisting of 9wt% ~19wt% _B 2 and a _Nb 2 _{O 5} of _{O 3 -SiO 2 -Na 2 O-} ZnO-Nb 2 O 5 based low melting glass A solid-state device characterized by comprising: The low-melting glass is Al ₂ O ₃ : 5 wt% or less , Li ₂ O: 3 wt% or less , K ₂ O: 4 wt% or less , MgO: 5 wt% or less , CaO: 5 wt% or less , SrO: 5 wt% by weight %. hereinafter, BaO: 5 wt% or less, ZrO2: 4 wt% or less, _TiO 2: solid state device of claim 3, further comprising at least one of 4 wt% or less of the composition. A solid state element;
A power receiving and supplying unit that mounts the solid-state element and receives and supplies power; and
Sealing the front Stories solid element, and SiO ₂ of 1 wt% 10 wt% by weight, and _B 2 _{O 3} of 15 wt% 30 wt%, and 25 wt% 60 wt% of ZnO, 10 wt% 50 wt% of Bi having a ₂ O _3, and less _La 2 _{O 3} 20wt%, the glass sealing part consisting of _{B 2 O 3 -SiO 2 -ZnO-} Bi 2 O 3 -La 2 O 3 based low-melting glass containing A solid-state device characterized by. Wherein the low melting glass, G _d 2 _O 3 by weight%: 20 wt% or less, _Y 2 _O 3: 10wt% or less, _ZrO 2: 5 wt% or less, _Nb 2 _O 5: 20wt% or less, BaO: 20 wt% or less, SrO: 20 wt% or less, CaO: 20 wt% or less, _TiO 2: 20wt% or less, _Li 2 O: 3wt% or less, _Na 2 O: 3wt% or less, _K 2 O: at least one of the 3 wt% or less of the composition The solid-state device according to claim 5, further comprising: A solid state element;
A power receiving and supplying unit that mounts the solid-state element and receives and supplies power; and
Sealing the front Stories solid element, and SiO ₂ of 1 wt% 10 wt% by weight, and _B 2 _{O 3} of 15 wt% 30 wt%, and 25 wt% 60 wt% of ZnO, 10 wt% 50 wt% of Bi having a ₂ O _3, and less _Nb 2 _{O 5} 20wt%, the glass sealing part consisting of _{B 2 O 3 -SiO 2 -ZnO-} Bi 2 O 3 -Nb 2 O 5 based low melting glass comprising A solid-state device characterized by. The low melting point glass is La ₂ O ₃ : 20 wt% or less , Gd ₂ O ₃ : 20 wt% or less , Y ₂ O ₃ : 10 wt% or less , ZrO ₂ : 5 wt% or less, BaO: 20 wt% or less , SrO: 20 wt% or less, CaO: 20 wt% or less, _TiO 2: 20wt% or less, _Li 2 O: 3wt% or less, _Na 2 O: 3wt% or less, _K 2 O: at least one of the 3 wt% or less of the composition The solid-state device according to claim 7 , further comprising: A solid state element;
A power receiving and supplying unit that mounts the solid-state element and receives and supplies power; and
The pre-Symbol solid element sealing glass consisting of 20 wt% 50 wt% of _{B 2 O 3, 30wt% ~70wt} % of _{B 2 O} 3 -SiO 2 -PbO-based low melting glass comprising a PbO in weight% A solid-state device having a sealing portion. The solid element is a solid element device according to any one of claims 1 9, characterized in that it has a size of more than 1 mm. The solid element is a solid element device according to any one of claims 1-9 having the configuration densely mounting a plurality of solid elements.   The solid-state device according to claim 1, wherein the solid-state element is flip-mounted. The power receiving supply unit, solid claimed in any one of 12, characterized in that with respect to the solid element is an inorganic material board formed a conductive pattern that performs receiving supply of electric power Element device.   The inorganic material substrate includes a first conductive pattern provided on the side on which the solid element is mounted, a second conductive pattern provided on the back side thereof, and a third conductive pattern that electrically connects both sides thereof. The solid-state device according to claim 13, comprising:   15. The solid element device according to claim 13, wherein the inorganic material substrate is an alumina substrate.   The solid-state element device according to any one of claims 1 to 13, wherein the glass sealing portion is subjected to a coating treatment for imparting moisture resistance, acid resistance, and alkali resistance to the surface.   The solid element device according to claim 1, wherein the solid element is an optical element, and the glass sealing portion is a translucent material. The solid-state device according to claim 17 , wherein the optical element is a light-emitting element. The solid-state device according to claim 17 , wherein the light-emitting element is a GaN-based LED element formed by laminating a GaN-based semiconductor layer on a substrate. The solid-state device according to claim 17 , wherein the optical element is a light receiving element.   The solid-state element device according to any one of claims 1 to 20, wherein a surface of the glass sealing portion is overmolded with a resin.