JP4924012B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a light-emitting device and a method for manufacturing the same, and more particularly to a light-emitting device having a structure in which a semiconductor light-emitting element is sealed using a glass material and a method for manufacturing the light-emitting device. is there.

  In a conventional light emitting device, a light emitting element is placed on a substrate such as a lead frame or a printed wiring board, and a light-transmitting sealing body is formed so as to cover the light emitting element. Usually, an organic material such as an epoxy resin or a silicone resin is used for the sealing body, and light emitted from the light-emitting element passes through the sealing body and is released into the air. When a light-emitting element is covered with an organic material, the organic material may be deteriorated by the light-emitting element or external heat or light, and the components in the organic material may alter the light-emitting element mounting substrate, the light-emitting element electrode, or the like. There is also. As a result, the optical characteristics, electrical characteristics, and reliability characteristics of the light emitting device may be deteriorated.

  On the other hand, a chip-type light emitting device in which an organic material such as an epoxy resin is replaced with a low-melting glass is known (for example, see Patent Documents 1 to 3). When manufacturing a light-emitting device using such a low-melting glass as a sealing material, the method of heating the low-melting glass to a melting point or higher and supplying it in a liquid state is as follows. There is a problem in that stress is generated due to the magnitude of the expansion rate and contraction rate, cracks occur, and the wiring is cut or disconnected. In addition, when the glass is cooled from a liquid and becomes a solid, stress is generated due to the magnitude of the expansion rate and contraction rate, cracks are generated, wiring is cut, and the light emitting element is detached from the substrate. There was a problem. Further, since the low melting point glass is colored, the light emitted from the light emitting element is partially absorbed by the colored portion of the low melting point glass, and the light extraction efficiency is poor.

  On the other hand, in Patent Document 4, a plate-like low-melting glass is set in parallel to a solid element mounting substrate, and a glass-sealed portion is formed by hot-pressing the plate-like glass, thereby providing moisture resistance, transparency, and heat resistance. The point which implement | achieves the solid-state device excellent in the property is proposed.

  However, for example, as shown in FIG. 14A, when the vertical cross-sectional shape of the cavity space 61 of the substrate 60 with a cavity is rectangular, there are the following problems when forming the glass sealing portion. That is, when the light emitting element 62 is mounted in the cavity space and the plate glass 63 is hot-pressed from above the cavity and filled from the opening front end surface portion to the bottom surface portion of the cavity space, as shown in FIG. As described above, the glass portion inside the cavity space protrudes toward the inside of the cavity space with respect to the glass portion in contact with the upper surface of the cavity side wall, and the vicinity of the center of the plate-like glass 63 protrudes most. Thereby, in the process in which the plate glass 63 is filled into the cavity space, the plate glass starts to come into contact with the bottom surface near the center in the cavity space. Until the filling progresses, a large stress is applied to the vicinity of the center of the bottom surface in the cavity space. At this time, as shown in FIG. 14C, when the light emitting element 62 is arranged near the center of the inner bottom surface, the light emitting element 62 receives a large stress, and the electrodes of the light emitting element 62 and the epi structure A portion corresponding to the bump bonding portion is subjected to a large stress, which causes a structural breakdown of the portion and deterioration of electrical characteristics and light emission characteristics.

  Further, normally, as shown in FIG. 15, a conductive pattern 64 for mounting the light emitting device with solder, for example, is formed on both sides of the back surface on the light emitting element mounting substrate. Is about 5 to 500 μm. And since the conductive pattern 64 on the back surface of the substrate becomes a support portion against the load received during the glass sealing, the vicinity of the center of the back surface of the substrate is in a floating state, and the substrate is supported at both ends by receiving the load near the center. It becomes. Therefore, a bending stress is generated in the substrate that receives a load during the glass sealing, and a large stress is generated particularly in the vicinity of the center of the substrate, which may cause a crack in the substrate.

On the other hand, when the light emitting element mounted on the substrate to which the cavity is not attached is glass-sealed, the light emitting element 62 becomes a protruding portion at the time of glass sealing, and this portion is pushed by the glass. Since it starts, a load is applied to the mounting position of the light emitting element 62, and a large bending stress is generated in the substrate of that portion, which may cause a crack in the substrate.
JP-A-11-177129 Japanese Patent Laid-Open No. 2002-203989 Japanese Patent Laid-Open No. 2004-200531 JP 2006-80317 A

  The present invention has been made to solve the above-described conventional problems. When manufacturing a light emitting device having a structure in which a light emitting element is mounted on a substrate and sealed with glass, the vicinity of the center of the substrate that receives a load during glass sealing is provided. Or it aims at providing the manufacturing method of the light-emitting device which can suppress that a bending stress generate | occur | produces in the board | substrate of a light emitting element mounting part, can avoid the possibility that a crack will generate | occur | produce in a board | substrate, and can be easily manufactured with mass productivity. .

  Further, according to the present invention, in a light emitting device having a structure in which a light emitting element is mounted on a substrate and sealed with glass, bending stress is generated in the vicinity of the center of the substrate that receives a load during glass sealing or on the substrate of the light emitting element mounting portion. An object of the present invention is to provide a light-emitting device that is suppressed, avoids the possibility of cracking in a substrate, has excellent heat resistance and light resistance, and has high reliability.

The method for manufacturing a light emitting device of the present invention is a method for manufacturing a light emitting device in which a light emitting element is mounted on a wiring substrate and sealed with glass , and a conductive pattern member for mounting the light emitting device is formed on a part of the back surface of the substrate. And a load distribution pattern member for generating a reaction force that cancels a bending moment due to a load from above the substrate and distributing the load is formed on the back surface of the substrate corresponding to the light emitting element mounting portion, and the conductive pattern member and the load A connection pattern member that is connected to the pattern member for dispersion is formed on the back surface of the substrate, each pattern member has the same thickness, and the connection pattern member is formed thinner than the conductive pattern member and the load distribution pattern member. a step of manufacturing a wiring board formed by the steps of mounting the light emitting element on the wiring board, the plate-like to the light emitting element is implemented on a wiring board Placing the lath, the glass softening point of glass or higher, and, by press-molding by heating such that the temperature lower than the melting point, sealing the light emitting element by fusing the glass, after the A glass sealing step for cooling the glass, and a dividing step for dicing the wiring board at a desired cutting position to divide the substrate into a desired light emitting device. The glass is made of SiO ₂ , BaO, TiO _2. Al ₂ O ₃ , P ₂ O ₅ , PbO, B ₂ O ₃ , ZnO, Nb ₂ O ₅ , Na ₂ O, K ₂ O, Sb ₂ O ₅ , CaO, Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , Including any of LaF ₃ , SnF ₂ , ZnF ₂ , and glass The transition temperature Tg is 200 ° C. to 600 ° C.

The light emitting device manufacturing method of the present invention is a method for manufacturing a light emitting device in which a light emitting element is mounted in a cavity space on a substrate with a cavity and sealed with glass, and the plurality of cavities each having the cavity space. A step of forming a wiring substrate with a cavity formed by fixing a bottom surface portion of a cavity array in which regions are integrally formed on the wiring substrate; and a step of mounting the light emitting element on the wiring substrate in each cavity space If, comprising a glass sealing step of sealing with glass the light emitting element in the cavity space, diced of the cavity-substrate at the desired cutting position, a dividing step of dividing into individual light emitting device, the In the wiring board with cavity array, the conductive pattern member for mounting the light emitting device is formed on a part of the back surface of the board, and the load from above the board A load distribution pattern member that generates a reaction force that counteracts the bending moment and disperses the load is formed on the back surface of the substrate corresponding to the vicinity of the center of the substrate, and connects the conductive pattern member and the load distribution pattern member. A pattern member is formed on the back surface of the substrate, each pattern member has the same thickness, the connection pattern member is formed thinner than the conductive pattern member and the load distribution pattern member, and the glass is made of SiO. ₂ , BaO, TiO ₂ , Al ₂ O ₃ , P ₂ O ₅ , PbO, B ₂ O ₃ , ZnO, Nb ₂ O ₅ , Na ₂ O, K ₂ O, Sb ₂ O ₅ , CaO, Li ₂ O, _{WO 3, Gd 2 O 3,} Bi 2 O 3, ZrO 2, SrO, MgO, La 2 O 3, Y 2 O 3, AgO, LiF, NaF, KF, AlF 3, MgF 2, CaF 2, SrF 2, _{aF 2, YF 3, LaF 3} , SnF 2, wherein one of ZnF _2, glass transition temperature Tg of 200 ° C. to 600 ° C., the glass sealing step, the opening front end surface of each cavity of the cavity array A plate-like glass is placed so as to close the glass, and the glass is filled into the cavity space by heating and press-molding the glass so that the temperature is higher than the glass softening point of the glass and lower than the melting point. The light emitting element is sealed together and then the glass is cooled .

The light emitting device of the present invention includes a light emitting element having a pair of electrodes, the light emitting element mounted on the upper surface, a conductive pattern member for mounting the light emitting device formed on a part of the back surface of the substrate, and bending by a load from above the substrate. A load distribution pattern member that generates a reaction force that counteracts the moment and disperses the load is formed on the back surface of the substrate corresponding to the light emitting element mounting portion, and connects the conductive pattern member and the load distribution pattern member. A pattern member is formed on the back surface of the substrate, each pattern member has the same thickness, and the connection pattern member is formed thinner than the conductive pattern member and the load distribution pattern member, and the wiring provided on the substrate, comprising a substrate electrode that is electrically connected to the electrode of the light emitting element, a glass sealing portion which seals the light emitting element, a, Serial glass sealing _{portion, SiO 2, BaO, TiO 2} , Al 2 O 3, P 2 O 5, PbO, B 2 O 3, ZnO, Nb 2 O 5, Na 2 O, K 2 O, Sb 2 O ₅ , CaO, Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , ZnF ₂ are included.

In the light emitting device of the present invention, a light emitting element having a pair of electrodes and a bottom surface of a cavity having a cavity space communicating between the upper and lower surfaces are fixed to the upper surface of the wiring board, A wiring substrate with a cavity on which a light emitting element is mounted, a substrate electrode provided on a substrate at the bottom of the cavity space and electrically connected to an electrode of the light emitting element, and glass filled in the cavity space A glass sealing part that seals the light emitting element by the above, and the wiring substrate with cavity has a conductive pattern member for mounting the light emitting device formed on a part of the back surface of the substrate, and is bent by a load from above the substrate. A pattern member for load distribution that generates a reaction force that cancels the moment and distributes the load is formed on the back surface of the substrate corresponding to the vicinity of the center of the substrate, and the conductive pattern A connection pattern member connecting the member and the load distribution pattern member is formed on the back surface of the substrate, the pattern members have the same thickness, and the connection pattern member includes the conductive pattern member and the load distribution pattern member. The glass sealing portion is made of SiO ₂ , BaO, TiO ₂ , Al ₂ O ₃ , P ₂ O ₅ , PbO, B ₂ O ₃ , ZnO, Nb ₂ O ₅ , Na ₂ O. , K ₂ O, Sb ₂ O ₅ , CaO, Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, It includes any one of NaF, KF, AlF ₃ , MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , and ZnF ₂ .

  In the light emitting device of the present invention, the area of the pattern member is formed in the range of 10 to 99% with respect to the region excluding the region of the conductive pattern member for mounting the light emitting device on the back surface of the substrate. The pattern member is a closed curve such as a circle, rectangle, polygon, or ellipse, or a mesh, stripe, radial, concentric, or dot shape centered on the light emitting element mounting portion or near the center of the substrate on the back side of the substrate. Or the like. The pattern member can be configured to be continuous with the conductive pattern member. The pattern member can be formed by the same process and the same material as the conductive pattern member. As the pattern member, an insulating pattern can be formed by applying or printing ceramic paste, vapor deposition of inorganic material, sputtering or plating.

  According to the method for manufacturing a light emitting device of the present invention, the reaction force that cancels the bending moment due to the load from above the substrate is applied to the back surface near the center of the substrate that receives a load during glass sealing or the back surface of the substrate corresponding to the light emitting element mounting portion. A pattern member for generating and distributing the load is formed. This suppresses the occurrence of bending stress in the vicinity of the center of the substrate or the portion of the substrate corresponding to the light emitting element mounting portion at the time of glass sealing, avoids the possibility of cracks occurring on the substrate, and easily manufactures with high productivity. Can do.

  According to the light emitting device of the present invention, in a light emitting device having a structure in which a light emitting element is mounted on a substrate and sealed with glass, the substrate back surface portion corresponding to the light emitting element mounting portion near the center of the substrate back surface that receives a load during glass sealing. Further, a pattern member for dispersing a load from above the substrate is formed. This suppresses the occurrence of bending stress in the vicinity of the center of the substrate or the substrate of the light emitting element mounting portion during glass sealing, avoids the possibility of cracks occurring in the substrate, has excellent heat resistance, light resistance, and reliability. A high light emitting device can be provided.

  The pattern member is a closed curve such as a circle, a rectangle, a polygon, an ellipse, etc., or a mesh, a stripe, a radial, a concentric circle, or a dot around the position corresponding to the light emitting element mounting portion or the vicinity of the center of the substrate It can be easily realized by configuring so as to have a pattern such as a shape.

  Moreover, a pattern member can be easily implement | achieved by forming with the same process and the same material as a conductive pattern member, and also connecting with a conductive pattern member. Further, the pattern member can form an insulating pattern by applying or printing ceramic paste, vapor deposition of inorganic material, sputtering or plating.

  Hereinafter, embodiments and examples of the present invention will be described with reference to the drawings. In this description, common parts are denoted by common reference numerals throughout the drawings. However, the present invention is not limited to this embodiment and example.

<First Embodiment>
FIG. 1 and FIGS. 2A to 2C are diagrams schematically showing steps in the first embodiment of the method for manufacturing a light emitting device of the present invention. FIGS. 3A and 3B are a side cross-sectional view and a bottom view schematically showing an example of the wiring board 10 with a cavity on which the light emitting element is mounted in FIG. FIG. 4 is a cross-sectional view schematically showing an example of a light-emitting device obtained by dividing each of the light-emitting devices according to the present invention through the manufacturing process. Here, a chip-shaped light-emitting element is mounted face-down on a wiring board with a cavity, but the light-emitting element can also be mounted face-up on a wiring board with a cavity. For convenience of illustration, a part of the substrate electrode formed on the wiring board with the cavity is not shown.

  In this light emitting device, a light emitting element 40 having a pair of electrodes is mounted on the wiring substrate 30 on the bottom surface in the cavity space 21, and a conductive pattern member 31 a for mounting the light emitting device is formed on a part of the back surface of the wiring substrate 30. Has been. The back surface of the wiring board 30 corresponding to the light emitting element mounting portion has the same thickness as the conductive pattern member 31a, generates a reaction force that cancels the bending moment due to the load from above the wiring board 30, and distributes the load. A pattern member 33 to be formed is formed. A substrate electrode and a wiring pattern 31 that are electrically connected to the electrode of the light emitting element 40 are provided on the wiring substrate 30, and has a glass sealing portion 11 a that seals the light emitting element 40.

  First, as shown in FIG. 1, for example, the cavity array 20 and the wiring board 30 are formed separately, and the bottom of the cavity array 20 is fixed to the wiring board 30 by, for example, adhesion. It is formed by the method. In this case, the cavity array 20 is formed by integrally forming a plurality of cavity regions 20a using, for example, ceramics. Each cavity region 20a has a cavity space 21 communicating between the upper and lower surfaces, and each cavity space 21 may have a rectangular vertical cross-sectional shape, but the opening area from the opening tip surface side toward the bottom surface side. It is desirable to have an inner wall structure that gradually decreases.

On the other hand, the wiring substrate 30 is formed by integrally forming a plurality of substrate regions 30a using alumina (Al ₂ O ₃ ) or aluminum nitride (AlN). A substrate electrode and a pattern wiring 31 are formed in each substrate region 30 a, and a part of the substrate electrode and the pattern wiring 31 is exposed on the bottom surface of each cavity space 21. In each substrate region 30a, a through hole (not shown) and a conductive material (not shown) in the hole are formed in order to conduct between the substrate electrodes on both sides of the wiring substrate 30 and the pattern wiring 31. Yes. As shown in FIGS. 3A and 3B, a part of the substrate electrode and the pattern wiring 31 is extended to the conductive pattern member 31a of the conductive pattern portion for mounting the light emitting device at a position near both sides of the back surface of the substrate. It is formed in the state. Further, in the vicinity of the center of the back surface of each substrate region 30a, a pattern member 33 that generates a reaction force that cancels a bending moment due to a load from above the substrate at the time of glass sealing, which will be described later, and disperses the load is electrically conductive pattern member 31a. They are formed to have the same width and the same thickness. In addition, the area of the pattern member 33 is formed in the range of 10 to 99% with respect to the region excluding the region of the conductive pattern member 31a for mounting the light emitting device on the back surface of the substrate.

  Here, in the case of a light-emitting device in which the light-emitting element 40 is mounted face-down, a pair of electrodes of the light-emitting element 40 are respectively Au bumps or solder on a wiring board 10a with a cavity provided with a predetermined substrate electrode and pattern wiring 31. Bonding (flip chip connection) is performed via a ball. In face-down mounting, the structure is not limited to the above example, and a structure in which solder is used between the substrate electrode on the wiring substrate 30 and the wiring pattern 31 and the pad electrode of the light emitting element 40, or gold, silver Various forms such as a structure bonded using conductive paste such as palladium, rhodium, anisotropic conductive paste, or the like can be employed.

  On the substrate region 30a in each cavity space 21, for example, as shown in FIG. 2, the light-emitting element 40 is flip-chip connected via the conductive bumps 32 and face-down mounted, whereby the element-mounted wiring board 30a is mounted. obtain. In this example, the light emitting element 40 having a pair of positive and negative electrodes on the same surface side is mounted face-down on the substrate region 30a. However, the light emitting element 40 may be modified to be face-up mounted.

  In the case of a light-emitting device in which the light-emitting element 40 is mounted face-up, a metal brazing material such as AuSn or AgSn is used for the bottom surface of the light-emitting element 40 on the wiring substrate 10 with the cavity on which the predetermined substrate electrode and the wiring pattern 31 are provided. The pair of electrodes of the light emitting element 40 and the substrate electrode and the wiring pattern 31 are connected to each other through a loop-shaped bonding wire made of Au, Ag, Al, W, Pt or the like. The die bonding means between the wiring board 30 and the light emitting element 40 in face-up mounting is not limited to the above example, and various forms such as an inorganic adhesive and metal bonding can be adopted.

  Next, the light emitting elements 40 in each cavity space 21 are collectively sealed with the glass 11, and then the glass 11 is cooled. In this embodiment, in this embodiment, as shown in FIGS. 2A to 2B, a plate-like glass 11 is mounted on the entire cavity array 20 so as to close the opening front end surface of each cavity space. Put. In this manner, the plate-like glass 11 is sandwiched between the molds (upper mold 51 and lower mold 52) in a state of being overlaid on the workpiece, and heated, for example, so as to be equal to or higher than the glass softening point in a nitrogen atmosphere, By performing pressurization, the glass 11 is fused to seal the light emitting element 40. At this time, the heating is performed so that the temperature is lower than the melting point of the glass. Thereafter, the glass 11 is solidified by cooling, and becomes a glass sealing portion 11 a for sealing the light emitting element 40.

  Thereafter, the glass sealing portion 11a and the wiring substrate with a cavity 10a are finally separated into individual unit regions (30a, 20a) and divided into a plurality of light emitting devices, for example, as shown in FIG. . As a result, each light emitting device includes a wiring substrate 10a with a cavity including a wiring substrate 30a corresponding to the substrate region 30a and a cavity 20a corresponding to the cavity region 20a.

  2A to 2C show an example of a state in which the plate-like glass 11 is filled from the opening front end surface portion of the cavity space 21 toward the bottom surface portion in the glass sealing step. That is, as shown in FIG. 2A, the plate-like glass 11 is heated and softened from above the cavity array 20, and is pressed and filled. At this time, as shown in FIG. 2B, the glass portion inside the cavity space 21 protrudes toward the inside of the cavity space 21 relative to the glass portion contacting the upper surface of the cavity side wall, and the vicinity of the center of the glass 11 protrudes most. . Thereby, in the process in which the glass 11 is filled into the cavity space 21, the glass 11 starts to contact from the bottom surface near the center in the cavity space 21. When the light emitting element 40 is arranged near the center of the inner bottom surface, the light emitting element 40 receives stress from the glass 11. At this time, near the center of the back surface of the substrate region 30a or the back surface portion corresponding to the light emitting element mounting portion receives a load from above the wiring substrate 30 during glass sealing as shown in FIG. A pattern member 33 for generating a reaction force that cancels the bending moment and distributing the load is formed with the same thickness as the conductive pattern member 31a. This suppresses the occurrence of bending stress in the vicinity of the center of the substrate region 30a or the wiring substrate 30 of the light emitting element mounting portion during glass sealing, and avoids the possibility of cracks occurring in the wiring substrate 10 with cavities. It can be manufactured with high productivity.

  Therefore, the bending stress received by the substrate region 30a is relaxed, and the structural breakdown of the portion, and the deterioration of the electrical characteristics and the light emission characteristics are suppressed. Further, when the light emitting element 40 is covered with the phosphor layer, the filled glass is in contact with the phosphor layer, but the phosphor layer receives a pressure from the glass and a shearing force accompanying the deformation of the glass. Compared to the case where stress is applied, the degree of damage such as peeling is reduced.

  Further, in the process of filling the glass 11 into the cavity space 21, the glass 11 has a curved shape in which the vicinity of the center in the cavity space 21 protrudes, but from the opening front end surface side of the cavity space 21 toward the bottom surface side. By forming so that the opening area gradually decreases, the glass 11 is sufficiently filled up to the periphery of the bottom surface in the cavity space 21, and the unfilled portion of the glass 11 is unlikely to occur in the periphery of the bottom surface of the cavity space 21.

  Thereafter, if necessary, the glass 11, the cavity array 20, and the wiring board 30 are diced at a desired cutting position to be divided into a plurality of light emitting devices. At this time, a light-emitting device in which the glass-sealed wiring substrate 30 is cut by a dicing blade at a dicing line portion avoiding the light-emitting element 40 and the light-emitting element 40 is divided into individual pieces, or the light-emitting element 40 is mounted. The wiring board 30 may be cut between each row of the light emitting element array on the finished wiring board 30 to obtain a light emitting device in which the light emitting elements 40 are divided into a plurality of units of modules. At this time, without using a dicing blade, snap lines may be formed in the cavity array 20 and the wiring board 30 in advance, and stress may be applied to divide by snap line braking. Or after cutting partially using a dicing blade, you may divide | segment by the braking of a snap line. After that, if necessary, the side surface and the upper surface of the glass sealing portion can be polished to form a flat surface without unevenness or a smooth curved surface.

  Through the series of steps as described above, the light emitting element 40 is mounted in the cavity space 21 on the wiring substrate 10a with the cavity, and the light emitting device in which the light emitting element 40 is sealed with the glass sealing portion 11a is obtained.

  According to the method for manufacturing a light emitting device described above, the generation of bending stress in the vicinity of the center of the wiring board 30 that receives a load from the glass 11 during glass sealing or in the wiring board 30 of the light emitting element mounting portion is suppressed. Therefore, it is possible to avoid the possibility of cracks occurring in the light emitting device, and to easily manufacture a highly reliable light-emitting device having excellent heat resistance and light resistance and high productivity.

  Furthermore, by devising the cavity shape of the wiring substrate 10 with a cavity so as to be suitable for glass sealing, by providing an inner wall structure in which the opening area gradually decreases from the opening front end surface side to the bottom surface side of the cavity space 21 Further, it is possible to improve the efficiency of glass filling and improve the effect of reducing damage to the light emitting element 40. That is, it is possible to suppress the occurrence of glass unfilled portions at the peripheral edge of the bottom surface in the cavity space 21, and to reduce the stress load applied to the light emitting element 40. In addition, the processing time required for filling the glass can be shortened, the time during which the light emitting element 40 is exposed to high temperature and high pressure can be shortened, and the fluorescence of the light emitting element 40 when the electrode, the epitaxial growth structure and the light emitting element are covered with the phosphor layer. Damage to the body layer can also be reduced, and it becomes possible to manufacture easily with high productivity.

  In general, even if low-melting-point glass having a large thermal expansion coefficient is used, the expansion coefficient as a bulk can be reduced by mixing a filler into the sealing material, and cracks at the interface between the sealing body and the object to be sealed can be suppressed. A light-emitting device that can reduce stress and can withstand use under severe environmental conditions can be realized. It is also possible to mix a phosphor with the sealing material. At this time, a white light emitting device can be realized at low cost by using a blue light emitting element as the light emitting element 40 and a YAG phosphor as the phosphor.

  Further, instead of directly covering the light emitting element 40 with the glass sealing portion 11a, the light emitting element 40 is covered with the glass sealing portion 11a after the light emitting element 40 is covered with a covering member (not shown). Can be protected from heat and dust. A fluorescent material or the like can be mixed in a predetermined liquid, sol, gel, or the like on the covering member. For example, when a powdery fluorescent material is used for the covering member, a fluorescent material mixed with water or an organic solvent can be fixed around the light emitting element. When the temperature is raised to soften the glass, water and organic solvents volatilize. In this way, since the light emitting element 40 is not directly covered with the glass sealing portion but is covered with the glass sealing portion 11a via the covering member, the amount of the fluorescent material used can be reduced. , Orientation characteristics can be improved. Note that the covering member can cover not only the light emitting element but also the substrate electrode, and can be easily disposed around the light emitting element 40.

  Furthermore, it is preferable that the film is fixed to the outer surface of the glass sealing portion. Thereby, discoloration of the glass sealing portion can be reduced, and the coating film can have a predetermined function. For example, a film having a filter function that absorbs light of a predetermined wavelength and emits light of a specific wavelength to the outside. Moreover, you may form by sticking a glass lens or a resin lens on the surface of a glass sealing part.

  Hereinafter, each of the above-described components will be described in detail.

<Light emitting element>
The light emitting element 40 is formed by forming a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, or AlInGaN on a substrate as a light emitting layer. Examples of the semiconductor structure include a homo structure having a MIS junction, a PIN junction, and a PN junction, a hetero structure, and a double hetero structure. Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal. The light emitting layer may have a single quantum well structure or a multiple quantum well structure which is a thin film in which a quantum effect is generated.

  In consideration of outdoor use, it is preferable to use a gallium nitride compound semiconductor as a semiconductor material capable of forming a high-luminance light-emitting element. In red, gallium / aluminum / arsenic semiconductors or aluminum / indium / gallium are used. -It is preferable to use a phosphorus-based semiconductor, but it can be used in various ways depending on the application.

  When a gallium nitride compound semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO or GaN is used for the substrate. A sapphire substrate is preferably used to form gallium nitride with good crystallinity with high productivity. Since the light emitting element 40 is used face down, the substrate needs to be translucent. 1 shows a light emitting device 40 using a nitride compound semiconductor. A buffer layer such as GaN or AlN is formed on the sapphire substrate. A first contact layer made of N or P-type GaN, an active layer made of an InGaN thin film having a quantum effect, a clad layer made of P or N-type AlGaN, and a second contact made of P or N-type GaN. It can be set as the structure which formed the contact layer in order. Gallium nitride-based compound semiconductors exhibit N-type conductivity without being doped with impurities. When forming a desired N-type gallium nitride semiconductor such as improving luminous efficiency, Si, Ge, Se, Te, C, etc. are preferably introduced as appropriate as N-type dopants.

  On the other hand, when a P-type gallium nitride semiconductor is formed, a P-type dopant such as Zn, Mg, Be, Ca, Sr, or Ba is doped. Since a gallium nitride based semiconductor is difficult to be converted to P-type only by doping with a P-type dopant, it is necessary to make it P-type by annealing it by heating in a furnace, low electron beam irradiation, plasma irradiation or the like after introducing the P-type dopant. The semiconductor wafer thus formed is partially etched to form positive and negative electrodes. Thereafter, the light emitting element 40 can be formed by cutting the semiconductor wafer into a desired size.

  A plurality of light emitting elements 40 can be used as appropriate, and various color tones can be realized by combinations thereof. For example, a light emitting element capable of emitting blue, green, and red light so as to have three primary colors is used. In order to use as a full color light emitting device for a display device, it is preferable that a red light emission wavelength is 610 nm to 700 nm, a green light emission wavelength is 495 nm to 565 nm, and a blue light emission wavelength is 430 nm to 490 nm. A white light-emitting device uses a blue light-emitting element and a fluorescent material that emits yellow light. The fluorescent material absorbs light from the light emitting element, converts the wavelength, and emits yellow light. The light from the fluorescent material and the light from the light emitting element are mixed to form mixed color light and emit white light. In addition, the arrangement of the plurality of light-emitting elements is appropriately changed depending on the application, the manufacturing process, and the like.

  The p-side electrode of the light emitting element has a linear shape, a curved shape, a whisker shape, a comb shape, a mesh shape, or the like. For the p-side electrode, metals such as Au and Au—Sn, ITO other than metals, and ZnO can also be used. Moreover, it is good also as an electrode form provided with several opening part for light extractions, such as a mesh electrode, instead of the translucent p side electrode. The size of the light emitting element can be mounted in a size of □ 1 mm, and a size of □ 600 μm, □ 320 μm, etc. can be mounted.

<Wiring board, cavity>
The wiring board 30a is provided with a predetermined substrate electrode and a wiring pattern 31, and the light emitting element 40 is placed by electrically connecting the electrode of the light emitting element 40 to the substrate electrode and the pattern member 31a. The wiring board 30a may be any substance that does not deteriorate at a temperature at which the glass 11 is heated and softened. For example, alumina (Al ₂ O ₃ ), aluminum nitride (AlN), SiC, SiO ₂ , ZrO ₂ , SiN, etc. ceramic substrate, glass epoxy substrate, glass substrate, W alloy, Ni, Mo, V, Mn, Cr, A low expansion metal substrate containing Fe or the like. Of these, a ceramic substrate having excellent heat resistance and light resistance is preferred. In particular, 90% to 96% by weight of the raw material powder is alumina, and the temperature range of 1500 ° C. to 1700 ° C. is added by adding 4% to 10% by weight of viscosity, talc, magnesia, calcia, silica, etc. as a sintering aid. The ceramics sintered at 40% to 40% by weight of the raw material powder are alumina, and 60% to 40% by weight of borosilicate glass, cordierite, forsterite, mullite, etc. are added as a sintering aid. The ceramic etc. which were sintered in the temperature range of deg. TiO ₂ , TiN or the like can be added to these ceramic materials. It is also possible to dark color by containing such _{Cr 2 O 3, MnO 2,} Fe 2 O 3 in the green sheet itself.

  The wiring board 30a can be provided with a through hole (not shown) at a predetermined position on a flat plate having a predetermined thickness, and a conductive member can be disposed in the through hole. For example, through holes are provided at four corners from the upper surface to the back surface of a ceramic substrate (unit substrate region) having a substantially rectangular parallelepiped shape. Furthermore, through holes are provided on two opposite sides, and a conductive member is provided from the top surface to the back surface of the substrate. A predetermined substrate electrode and a wiring pattern 31 are formed on the upper surface of the substrate and electrically connected to the conductive member of the through hole. In addition, on the back surface of the substrate, a conductive member having a large area is arranged so as not to be short-circuited, and is electrically connected to the conductive member of the through hole. These conductive members are connected to the substrate electrode and the wiring pattern. 31. Thereby, electrical connection can be established with the back side of the ceramic substrate. The substrate electrode and the wiring pattern 31 provided on the substrate are at least a pair of conductive members that electrically connect the n-side electrode and the p-side electrode of the light emitting element 40. The substrate electrode and the wiring pattern 31 are preferably made of a metal such as gold, silver, copper, nickel, or aluminum, or a member having high electrical conductivity and high reflection efficiency such as ITO. This is because the light from the light emitting element 40 is reflected by the substrate electrode and the wiring pattern 31 to increase the light emission efficiency toward the front. The material for the substrate electrode and the wiring pattern 31 is preferably selected in relation to the emission wavelength of the light emitting element. This is because the reflectance is high in a certain wavelength range, but the reflectance may be low in a different wavelength range. Although the substrate electrode and the wiring pattern 31 can occupy most of the upper surface of the wiring substrate 30a, in order to increase the fixing force of the glass to the wiring substrate 30a and to take insulation of the substrate electrode and the wiring pattern 31, the wiring It is preferable that the upper surface area of the substrate 30a be less than half.

  For example, a substrate using ceramics is fired after forming a predetermined shape to form the wiring substrate 10 with a cavity array. The substrate uses one or more ceramic green sheets. In the green sheet stage before firing, the ceramic substrate can take various shapes. The substrate electrode and the wiring pattern 31 in the ceramic substrate are formed from a paste-like material in which a refractory metal such as tungsten or molybdenum is contained in a resin binder. By a method such as screen printing, a desired shape is obtained through a through-hole provided in a paste-like material green sheet, and a conductor pattern wiring is obtained by firing ceramics. After laminating such green sheets, a ceramic substrate can be obtained by sintering.

  The thickness of the wiring substrate 10a with the cavity array is preferably 0.3 mm to 3 mm, but any one can be used. As the wiring substrate 10a with the cavity array, one having a substantially rectangular plane, one having a substantially square plane, one having a substantially polygonal plane, or the like can be used. The separated wiring substrate 10a with the cavity array can be manufactured with a plane having a long side of 2 mm to 5 mm and a short side of 1 mm to 3 mm, and can also be manufactured with a predetermined size.

<Substrate electrode and pattern wiring 31>
The substrate electrode and the wiring pattern 31 are provided on the wiring substrate 30a. The substrate electrode and the pattern wiring 31 which are metal members are formed by patterning of Au, Ag, Cu, W, Pt, Rh, Al, Ni gold or the like by plating, vapor deposition, sputtering, printing or the like. The surfaces of the substrate electrode and the pattern wiring 31 are preferably smoothed in order to improve the reflectance. In addition, a through hole (through hole or via hole) is provided in a part of the substrate region, and a conductive material is formed on the inner surface of the through hole, or the inside of the through hole is filled with a conductive member. And the bottom pattern wiring 31 are electrically connected. When this through-hole is provided in the substrate region division planned portion, the pattern wiring that electrically connects the upper surface and the bottom surface of the wiring substrate 30a is exposed on the side surface of the wiring substrate 30a after the wiring substrate is divided.

  In each substrate region 30a, a part of the substrate electrode and the pattern wiring 31 is exposed on the bottom surface of each cavity space 21, and a part of the substrate electrode and the pattern wiring 31 is extended to a position near both sides of the back surface of the substrate. It is utilized as a substrate electrode for mounting a light emitting device and a conductive pattern member 31a. The area of the pattern member 33 is in the range of 10 to 99% with respect to the area excluding the area of the conductive pattern member 31 a for mounting the light emitting device on the back surface of the wiring board 30.

<Bump>
The conductive bump 32 electrically joins the n-side electrode and the p-side electrode of the light emitting element 40 with the substrate electrode and the wiring pattern 31. Further, when the glass 11 is heated to be softened, a metal such as a bump that softens and does not short-circuit is used. For example, metals and alloys such as Au—Sn, Ag, Cu, and Pb may be used, but Au is preferable. The melting point of Au is 1064 ° C. The gold bump is not softened at a temperature at which the glass is heated and softened, and a short circuit between the electrode of the light emitting element 40 and the substrate electrode and the wiring pattern 31 does not occur. The bump is usually a ball having a diameter of 100 to 300 μm.

<Glass>
Glass _{11, SiO 2, BaO, TiO 2} , Al 2 O 3, P 2 O 5, PbO, B 2 O 3, ZnO, Nb 2 O 5, Na 2 O, K 2 O, Sb 2 O 5, CaO , Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , or ZnF ₂ . And glass transition temperature Tg is 200 degreeC-600 degreeC, softening point / yield point is 200 degreeC-700 degreeC, melting | fusing point is 200 degreeC-800 degreeC, and a linear expansion coefficient is 3-15 ppm.

A specific example of the glass 11, 56~63wt%, Al ₂ O ₃ of _{5~13wt%, P 2 O 5 -Al} 2 O 3 -ZnO -based low melting glass containing 21～41Wt% of ZnO and P ₂ O ₅ It is. In this case, B ₂ O ₃ , Na ₂ O, K ₂ O, Li ₂ O, MgO, WO ₃ , Gd ₂ O ₃ , and ZrO ₂ are each 0 to 6 wt%, and CaO and SrO are each 0 to 12 wt%. , BaO, TiO ₂ , Nb ₂ O ₅ , Bi ₂ O ₃ may be contained in an amount of 0 to 22 wt%, respectively.

Other specific examples of the glass 11 include B ₂ O ₃ of 20 to 31 wt%, SiO ₂ of 0.3 to 14.5 wt%, Na ₂ O of 1 to 9 wt%, ZnO of 40 to 58 wt%, Nb ₂ O _This is a B ₂ O ₃ —SiO ₂ —Na ₂ O—ZnO—Nb ₂ O ₅ -based low-melting glass containing ₅ to 10 wt% of ₅ . In this case, BaO, TiO ₂ , Al ₂ O ₃ , K ₂ O, CaO, Li ₂ O, ZrO ₂ , SrO, and MgO may be further included in an amount of 0 to 6 wt%.

Yet another embodiment of the glass 11, B ₂ O ₃ and 15 to 30 wt%, a SiO ₂ 1~9wt%, ZnO of 25~59wt%, B ₂ O ₃ containing Nb ₂ O ₅ 10~49wt% - SiO ₂ —ZnO—Nb ₂ O ₅ -based low melting glass. In this case, BaO, TiO ₂ , Nb ₂ O ₅ , CaO, Gd ₂ O ₃ , SrO, La ₂ O ₃ , Y ₂ O ₃ are each 0 to 19 wt%, Al ₂ O ₃ is 0 to 9 wt%, Bi ₂ O ₃ may be included in an amount of 0 to 9 wt%, and Na ₂ O, K ₂ O, Li ₂ O, and ZrO ₂ may be included in an amount of 0 to 4 wt%, respectively.

Still another specific example of the glass 11 includes PbO, B ₂ O ₃ , and SiO ₂ , and among them, B ₂ O ₃ —SiO ₂ including 29 to 69 wt% of PbO and 20 to 50 wt% of B ₂ O _3. -PbO-based low melting point glass.

<Fluorescent substance>
The glass 11 can also contain a fluorescent material. By containing the fluorescent material, light emitted from the light emitting element 40 is absorbed by the fluorescent material, and wavelength conversion is performed to emit light having a color different from that of the light emitting element 40. Therefore, the fluorescent material may be any material that absorbs light from the light emitting element and converts the wavelength into light of a different wavelength. For example, it is mainly activated by nitride-based phosphors / oxynitride-based phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid-based phosphors such as Eu, and transition metal elements such as Mn. Alkaline earth halogen apatite phosphor, alkaline earth metal borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicate, alkaline earth sulfide, alkaline earth thiogallate, alkaline earth nitriding Selected from rare earth aluminates mainly activated by lanthanoid elements such as silicon, germanate, or Ce, and organic and organic complexes mainly activated by lanthanoid elements such as rare earth silicate or Eu It is preferable that it is at least any one or more. As specific examples, the following phosphors can be used, but are not limited thereto.

A nitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is M ₂ Si ₅ N ₈ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn). There is.) In addition to M ₂ Si ₅ N ₈ : Eu, MAlSiN ₃ : Eu, MSi ₇ N ₁₀ : Eu, M _1.8 Si ₅ O _0.2 N ₈ : Eu, M _0.9 Si ₇ O _0.1 N ₁₀ : Eu (M is Sr , At least one selected from Ca, Ba, Mg, Zn).

An oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is MSi ₂ O ₂ N ₂ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn) Etc.).

Alkaline earth halogen apatite phosphors mainly activated by lanthanoid elements such as Eu and transition metal elements such as Mn include M ₅ (PO ₄ ) ₃ X: R (M is Sr, Ca, Ba). X is at least one selected from F, Cl, Br and I. R is any one of Eu, Mn, Eu and Mn. Etc.).

The alkaline earth metal borate phosphor has M ₂ B ₅ O ₉ X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is F, Cl , Br, or I. R is Eu, Mn, or any one of Eu and Mn.).

Alkaline earth metal aluminate phosphors include SrAl ₂ O ₄ : R, Sr ₄ Al ₁₄ O ₂₅ : R, CaAl ₂ O ₄ : R, BaMg ₂ Al ₁₆ O ₂₇ : R, BaMg ₂ Al ₁₆ O ₁₂ : R, BaMgAl ₁₀ O ₁₇ : R (R is Eu, Mn, or any one of Eu and Mn).

Examples of alkaline earth sulfide phosphors include La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, and Gd ₂ O ₂ S: Eu.

Rare earth aluminate phosphors mainly activated by lanthanoid elements such as Ce include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O _{12 and} other YAG phosphors represented by the composition formula. Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc., in which a part or all of Y is substituted with Tb, Lu or the like.

Other phosphors include ZnS: Eu, Zn ₂ GeO ₄ : Mn, MGa ₂ S ₄ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is At least one selected from F, Cl, Br, and I).

  The phosphor described above contains one or more selected from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, and Ti instead of Eu or in addition to Eu as desired. You can also. Moreover, it is fluorescent substance other than the said fluorescent substance, Comprising: The fluorescent substance which has the same performance and effect can also be used.

  These phosphors can use phosphors having emission spectra in yellow, red, green, and blue by the excitation light of the light-emitting element, and emission spectra in yellow, blue-green, orange, etc., which are intermediate colors between them. A phosphor having the following can also be used. By using these phosphors in various combinations, light emitting devices having various emission colors can be manufactured.

For example, the wavelength conversion is performed by irradiating a fluorescent material of Y ₃ Al ₅ O ₁₂ : Ce or (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce using a GaN-based compound semiconductor that emits blue light. A light emitting device that emits white light by a mixed color of light from a light emitting element and light from a phosphor can be provided.

For example, CaSi ₂ O ₂ N ₂ : Eu, which emits light from green to yellow, or SrSi ₂ O ₂ N ₂ : Eu, and (Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu, which emits blue light, emits red light. By using a phosphor composed of (Ca, Sr) ₂ Si ₅ N ₈ : Eu, a light emitting device that emits white light with good color rendering can be provided. This uses the three primary colors of red, blue, and green, so that the desired white light can be achieved simply by changing the blend ratio of the first phosphor and the second phosphor. Can do.

<Light diffusion member>
A light diffusing member may be included in the glass instead of the above-described fluorescent material or together with the fluorescent material. As a specific light diffusion member, barium titanate, titanium oxide, aluminum oxide, silicon oxide or the like is preferably used.

  In the present specification, there is no particular distinction between the fluorescent substance, the light diffusing member, and the filler, and a substance having a high reflectance among the fluorescent substances acts as a light diffusing member. The light diffusing member is one having a center particle diameter of 1 nm or more and less than 5 μm. A light diffusing member having a thickness of 1 nm or more and less than 5 μm favorably diffuses light from the light-emitting element and the fluorescent material, and can suppress uneven color that tends to occur when a fluorescent material having a large particle diameter is used. In addition, the half width of the emission spectrum can be narrowed, and a light emitting device with high color purity can be obtained. On the other hand, a light diffusing member of 1 nm or more and less than 1 μm has high transparency and can increase the viscosity of the glass without lowering the light intensity.

<Filler>
Instead of the above-described fluorescent material, a filler may be included in the glass together with the fluorescent material and the light diffusing member. The specific material is the same as that of the light diffusing member, but the central particle diameter is different from that of the light diffusing member. Here, the powder filler - _is either _{SiO 2, TiO 2, Al 2} O 3, ZnO, ZrO 2, TaO 2, SnO, SnO 2, ITO, In 2 O 3, Ga 2 O 3, The center particle size (average particle size) is 5 nm to 100 μm. When the filler having such a particle size is contained in the glass, the chromaticity variation of the light emitting device can be improved by the light diffusion action. The fluidity of the glass can be adjusted to be constant, and the light emitting device can be mass-produced with a high yield.

  The powder filler preferably has the same or similar particle size and / or shape as the fluorescent material. The similar particle size is a difference in circularity (circular / longitude = peripheral length of a true circle equal to the projected area of the particle / perimeter of the projected particle) representing a degree of approximation with a perfect circle of each particle is 20 If less than%. By using such a powder filler, the fluorescent material and the filler interact with each other, the fluorescent material can be favorably dispersed in the glass, and color unevenness can be suppressed.

<Coating>
It is preferable to form a film on the surface of the glass sealing part 11a. The coating can prevent deterioration (discoloration, devitrification, cloudiness) of the glass surface. The white turbidity and devitrification of glass is mainly caused by the crystallization of glass. Further, moisture permeation can be suppressed. A film containing a filler or the like can be used. For example, a light-emitting device capable of extracting light with a specific wavelength (light with a wavelength from 350 nm to 550 nm) by using a film that absorbs light with a predetermined wavelength (light with a wavelength of 350 nm or less and light with a wavelength of 550 nm or more) Can be provided. The coating film can have a multilayer structure as well as a single layer. The transmittance can be increased by employing a multilayer structure.

<Modification of First Embodiment>
The pattern member 33 of the wiring board according to the first embodiment generates a reaction force that cancels a bending moment due to a load from above the wiring board 30a and has a function of dispersing the load. The shape may be set. That is, on the back surface of the wiring board 30a, a closed curve such as a circle, a rectangle, a polygon or an ellipse, a mesh, a stripe, or the like, with a position corresponding to the light emitting element mounting portion or a position corresponding to the vicinity of the center of the wiring board 30a. It may have a pattern such as a radial, concentric, or dot pattern. The pattern member 33 may be formed continuously with the conductive pattern member 31a, or may be formed with the same process and the same material as the conductive pattern member 31a. Further, the pattern member 33 may be an insulating pattern formed by applying or printing ceramic paste, vapor deposition of inorganic material, sputtering or plating. In order to connect the pattern wiring on the top and bottom of the wiring board, a through hole is provided in the wiring board, a conductive material is formed on the inner surface of the through hole, or the inside of the through hole is filled with a conductive member. May be.

  5 to 7 are a side sectional view and a bottom view schematically showing a plurality of modified examples of the conductive pattern 31a and the pattern member 33 in the wiring board with a cavity shown in FIGS. 3 (a) and 3 (b), respectively. .

  FIGS. 5A and 5B are examples in which a conductive material is formed on the inner surface of the through hole provided in the wiring board with the cavity. FIGS. 5C and 5D are through holes provided in the wiring board with the cavity. The example which filled the inside with the electroconductive member is shown. In the wiring substrate with a cavity shown here, the conductive pattern member for mounting the light emitting device near the center of the back surface of the wiring substrate 30 or on the back surface portion of the wiring substrate 30 corresponding to the light emitting element mounting portion. A pattern member 33 that generates a reaction force that cancels a bending moment due to a load and distributes the load with the same width and the same thickness as 31a is formed. The pattern member 33 that generates a reaction force that counteracts the bending moment due to the load and disperses the load contributes to an increase in the heat dissipation effect if a material having good thermal conductivity is used.

  The pattern member 33 that generates a reaction force that cancels the bending moment due to the load and disperses the load can be easily formed in the same process if the same material as the conductive pattern member 31a is used. The pattern member 33 that generates a reaction force that cancels the bending moment due to the load and disperses the load may use other materials, for example, application or printing of ceramic paste, vapor deposition of inorganic material, sputtering or plating. The insulating pattern formed by the above may be used.

  FIGS. 6A and 6B are examples in which a conductive material is formed on the inner surface of the through hole provided in the wiring board with the cavity. FIGS. 6C and 6D are through holes provided in the wiring board with the cavity. The example which filled the inside with the electroconductive member is shown. In the wiring board with a cavity of FIG. 6, the conductive pattern member 31a for mounting the light emitting device and the pattern member 31b that generates a reaction force that cancels the bending moment due to the load and distributes the load are formed continuously and integrally. Yes. In other words, the conductive pattern member 31a and the pattern member 31b are extended with the same width and the same thickness from near both sides of the back surface of the wiring board 30 to the vicinity of the center of the back surface of the wiring board 30. The conductive pattern member 31b near the center of the back surface of the wiring board 30 generates a reaction force that cancels the bending moment due to the load, functions as a pattern member 31b that disperses the load, and contributes to an increase in the heat dissipation effect. . The conductive pattern member 31a is usually formed by subjecting the conductive film to electroplating. However, the pattern member 31b that generates a reaction force that cancels the bending moment due to the load and disperses the load is mounted on the light emitting device. Therefore, the electroplating can be easily performed.

  FIGS. 7A and 7B are examples in which a conductive material is formed on the inner surface of the through hole provided in the wiring board with the cavity. FIGS. 7C and 7D are through holes provided in the wiring board with the cavity. The example which filled the inside with the electroconductive member is shown. In the wiring board with a cavity of FIG. 7, the conductive pattern member 31a for mounting the light emitting device and the pattern member 31b that generates a reaction force that cancels the bending moment due to the load and distributes the load are formed by the thin conductive pattern member 31c. It is formed continuously. In other words, the conductive pattern member 31a and the pattern member 31b are formed with the same width and the same thickness near both sides of the back surface of the wiring substrate 30 and near the center of the back surface of the wiring substrate 30. The thin connection pattern 31c that connects the vicinity is made the same thickness as the conductive pattern member 31a. The conductive pattern member 31b near the center of the back surface of the wiring board 30 generates a reaction force that cancels the bending moment due to the load and functions as a pattern member 31b that distributes the load, thereby contributing to an increase in the heat dissipation effect. Yes. In addition, the pattern member 31b and the connection pattern 31c that generate a reaction force that counteracts the bending moment due to the load and that distributes the load are electrically connected to the conductive pattern member 31a for mounting the light-emitting device, thereby facilitating electroplating. It becomes possible to do.

<Second Embodiment>
FIGS. 8A to 8C are diagrams schematically showing steps in the second embodiment of the method for manufacturing a light emitting device of the present invention. FIGS. 9A and 9B are a side sectional view and a bottom view schematically showing an example of the wiring board on which the light emitting element is mounted in FIG. FIG. 10 is a cross-sectional view schematically showing an example of a light-emitting device obtained by individual division through the manufacturing process of the second embodiment. Here, the light-emitting element 40 mounted face-down on the wiring board 30 is illustrated, but a light-emitting element mounted face-up on the wiring board can also be used, but the illustration is omitted. For convenience of illustration, a part of the wiring board electrode formed on the wiring board 30 is not shown.

  The second embodiment is different from the first embodiment described above in that the wiring board 10 with a cavity is not used, the wiring board 30 without a cavity is used, and the others are the same. Hereinafter, different points will be mainly described. First, similarly to the first embodiment, the wiring substrate 30 and the light emitting element 40 are separately formed, and the light emitting element 40 is mounted on each substrate region 30a to obtain the element mounted wiring substrate 30. In this example, the light-emitting element 40 having a pair of positive and negative electrodes on the same surface side is flip-chip connected to the substrate region 30a via the conductive bump 32 and mounted face-down. It may be changed to be implemented.

  Next, the light emitting elements 40 on each substrate region 30a are collectively sealed with the glass 11, and then the glass 11 is cooled. In sealing the glass, in this embodiment, as shown in FIGS. 8A to 8B, the plate-like glass 11 is placed on the entire wiring board 30 on which the element is mounted. In this manner, the plate-like glass 11 is sandwiched between the molds (upper mold 51 and lower mold 52) in a state of being overlaid on the workpiece, and heated, for example, so as to be equal to or higher than the glass softening point in a nitrogen atmosphere, By performing pressurization, the glass 11 is fused to seal the light emitting element 40. At this time, the glass 11 is heated to a temperature lower than the melting point of the glass. Thereafter, the glass 11 is solidified by cooling, and becomes a glass sealing portion 11 a for sealing the light emitting element 40. Thereafter, the glass sealing portion 11a and the wiring substrate 30 are finally separated into individual unit regions 30a as shown in FIG. 10, for example, and divided into a plurality of light emitting devices.

  FIGS. 8A to 8C show an example of a process of sealing the plate-like glass 11 in the glass sealing process. That is, as shown in FIG. 8A, the plate-like glass 11 is heated and pressed from above. At this time, as shown in FIG. 8B, since the mounting portion of the light emitting element 40 in the vicinity of the center of the inner bottom surface protrudes most on the wiring substrate 30, the plate-like glass 11 starts to contact from the vicinity of the center. As a result, the light emitting element 40 receives stress. At this time, near the center of the back surface of the substrate region 30a or the back surface portion corresponding to the light emitting element mounting portion receives a load from above the wiring substrate 30 at the time of glass sealing as shown in FIG. A pattern member 33 that generates a reaction force that cancels the moment and disperses the load is formed with the same thickness as the conductive pattern member 31a. As a result, it is possible to suppress the occurrence of bending stress in the vicinity of the substrate center of the substrate region 30a or the substrate of the light emitting element mounting portion at the time of glass sealing, avoiding the possibility of cracking in the wiring substrate, and easily mass-producing. It can be manufactured with good performance. That is, the stress applied to the substrate region 30a is alleviated, and structural destruction of the portion, and deterioration of electrical characteristics and light emission characteristics are suppressed.

  Thereafter, if necessary, the glass 11a and the wiring substrate 30 are diced at a desired cutting position to be divided into a plurality of light emitting devices. At this time, the glass-sealed wiring board is cut by a dicing blade at a dicing line portion avoiding the light-emitting elements 40, and the light-emitting device is divided into individual pieces, or on the mounted wiring board. A wiring board may be cut between each row of the light emitting element array to obtain a light emitting device in which the light emitting elements are divided into a plurality of units of modules. At this time, a snap line may be formed in advance on the wiring board 30 without using a dicing blade, and may be divided by braking the snap line by applying stress. Or after cutting partially using a dicing blade, you may divide | segment by the braking of a snap line. After that, if necessary, the side surface and the upper surface of the glass sealing portion can be polished to form a flat surface without unevenness or a smooth curved surface.

  Through the series of steps as described above, as illustrated in FIG. 10, a light emitting device in which the light emitting element 40 is mounted on the wiring substrate 30a and sealed by the glass sealing portion 11a is obtained.

<Modification of Second Embodiment>
Similarly to the first embodiment, the wiring board pattern member 33 in the second embodiment generates a reaction force that cancels the bending moment due to the load from above the wiring board 30 to prevent the generation of bending stress, and The pattern member 33 may have a desired shape as long as it has an effect of dispersing the load. That is, on the back surface of the wiring board 30, a closed curve such as a circle, a rectangle, a polygon, an ellipse, or the like, a mesh, a stripe, or a radial center around a position corresponding to the light emitting element mounting portion or a position corresponding to the vicinity of the center of the wiring board. Alternatively, it may have a concentric or dot pattern. The pattern member 33 may be formed continuously with the conductive pattern member 31a, or may be formed with the same process and the same material as the conductive pattern member 31a. Furthermore, the pattern member 33 may be an insulating pattern formed by applying or printing ceramic paste, vapor deposition of inorganic material, or sputtering. In order to connect the pattern wirings on the upper surface and the bottom surface of the wiring substrate 30, a through hole is provided in the wiring substrate 30, a conductive material is formed on the inner surface of the through hole, or the inside of the through hole is filled with a conductive member. You may do it.

  FIGS. 11 to 13 are a side sectional view and a bottom view schematically showing a plurality of modified examples of the conductive pattern 31a and the pattern member 33 in the wiring board 30 shown in FIGS. 9A and 9B, respectively. 11 to 13, (a) and (b) are examples in which a conductive material is formed on the inner surface of a through hole provided in the wiring board 30, and (c) and (d) are provided on the wiring board 30. The example which filled the inside of the through-hole with the electroconductive member is shown. In the wiring substrate 30 shown here, the conductive pattern member 31a for mounting the light emitting device near the center of the back surface of the wiring substrate 30 or on the back surface portion of the wiring substrate 30 corresponding to the light emitting element mounting portion is located near both sides of the back surface of the wiring substrate 30. The pattern member 33 is generated that generates a reaction force that cancels the bending moment due to the load and distributes the load with the same width and the same thickness. The pattern member 33 that generates a reaction force that counteracts the bending moment due to the load and disperses the load contributes to an increase in the heat dissipation effect if a material having good thermal conductivity is used. Further, if the same material as that of the conductive pattern member 31a is used, the load distribution pattern member 33 can be easily formed in the same process. The load distribution pattern member 33 may be made of other materials, for example, an insulating pattern formed by applying or printing ceramic paste, vapor deposition of inorganic material, sputtering or plating.

  11 (a) to 11 (d) are different from FIGS. 5 (a) to (d) described above in that there is no cavity part, and the same parts as in FIGS. 5 (a) to (d) are the same. The code | symbol is attached | subjected.

  12 (a) to (d) are different from FIGS. 6 (a) to (d) described above in that there is no cavity part, and the same parts as in FIGS. 6 (a) to (d) are the same. The code | symbol is attached | subjected.

  13 (a) to (d) are different from FIGS. 7 (a) to (d) described above in that there is no cavity part, and the same parts as in FIGS. 7 (a) to (d) are the same. The code | symbol is attached | subjected.

<Third Embodiment>
In the third embodiment, a protective element (not shown) is mounted on the light emitting element mounting surface side or the back side of the wiring board in each of the above-described embodiments. As a protection element, for example, a Zener diode is electrically connected in reverse parallel to the light emitting element. In this case, the Zener diode has a structure in which a pair of electrodes are formed separately on the upper and lower surfaces of the element, and a loop-like wire wiring is connected from one electrode to the wiring board electrode, and the face-up mounting state described above Glass sealing is performed in the same manner as the light emitting element. At this time, glass sealing is possible without any particular damage.

  Even when a light-emitting element having a structure in which a pair of electrodes are separately formed on the upper and lower surfaces of the element, such as a red light-emitting element and an infrared light-emitting element, is mounted on a wiring board, the wiring board is connected from one electrode to the wiring board. A loop-shaped wire wiring is connected to the electrode, and glass sealing is possible as in the light-emitting element in the face-up mounting state described above.

An example will be described with reference to FIGS. 1 to 4 described above in the first embodiment. A bottom surface portion of the cavity array 20 as shown in FIG. 1 is fixed on an alumina (Al ₂ O ₃ ) wiring substrate 30, and substrate electrodes and patterns are formed on each substrate region 30 a of the wiring substrate 30 by screen printing or plating. The wiring substrate 10 with the cavity array on which the wiring 31 is formed is manufactured. At this time, in each substrate region 30a, the substrate electrode is divided into an n-side substrate electrode and a p-side substrate electrode, and at least a part of the substrate electrode and the pattern wiring 31 is formed exposed to the bottom surface of each cavity space. A part of the pattern wiring 31 is extended from the upper surface to the side surface and the lower surface of the wiring substrate 30 to a part of the rear surface of the wiring substrate 30 to form a conductive pattern member 31a for mounting the light emitting device. Further, in the vicinity of the center of the back surface of the wiring substrate 30 or the portion corresponding to the light emitting element mounting portion, the conductive pattern member 31a has the same thickness (100 μm) and has a reaction force that cancels the bending moment due to the load from above the wiring substrate 30. A pattern member 33 that generates and disperses the load is formed. Thereafter, bumps 32 made of Au or the like are formed in a spherical or egg shape on the substrate electrode.

  Further, a large number of light emitting elements 40 are formed. The light-emitting element 40 is an element that emits blue light having an emission peak wavelength in the vicinity of 460 nm. The light-emitting element 40 has an n-side electrode and a p-side electrode on the same surface side, and a translucent substrate on the opposite side. A semiconductor element shall be used. When the light emitting element 40 is placed on the wiring substrate 30, the light transmitting substrate is sucked with a collet or the like, and the n-side electrode and the p-side electrode are faced down. Heat is applied to the bump 32, the light emitting element 40 is subjected to ultrasonic vibration with a collet or the like, and the n-side electrode and the p-side electrode are joined to the bump 32 to electrically connect to the substrate electrode and the wiring pattern 31. Thereafter, the suction of the collet or the like is stopped, and the collet or the like is pulled up, whereby the element-mounted wiring board 30 is obtained.

  Further, the wiring substrate 10 with the cavity array is finally separated into individual unit regions (30a, 20a) and divided into a plurality of light emitting devices as shown in FIG. 4, for example. At this time, each light emitting device includes a wiring substrate 10a with a cavity including a wiring substrate 30a corresponding to the substrate region 30a and a cavity 20a corresponding to the cavity region 20a.

Next, the light emitting elements 40 in each cavity space are collectively sealed with the glass 11, and then the glass 11 is cooled. In this embodiment, in this embodiment, as shown in FIG. 1, the plate-like glass 11 is placed on the entire cavity array 20 so as to close the opening front end surface of each cavity space 21. In addition, when forming the plate-shaped glass 11, glass, a fluorescent substance, and a filler are mixed in the ratio of 100: 40: 30 (weight%), for example, and a fluorescent substance and a filler are put in glass by fully stirring. Disperse almost uniformly. In this example, the glass transition temperature Tg is 200 ° C. to 600 ° C., the softening point / bending point is 250 ° C. to 700 ° C., the melting point is 200 ° C. to 800 ° C., the linear expansion coefficient is 3 to 15 ppm, and the average particle size is 10 nm. Use ~ 200 μm glass. This glass contains 56 to 63 wt% P ₂ O ₅ , ₅ to 13 wt% Al ₂ O _3, and 21 to 41 wt% ZnO, and B ₂ O ₃ , Na ₂ O, K ₂ O, Li ₂ O. MgO, WO ₃ , Gd ₂ O ₃ and ZrO ₂ are each 0 to 6 wt%, CaO and SrO are each 0 to 12 wt%, BaO, TiO ₂ , Nb ₂ O ₅ and Bi ₂ O ₃ are each 0 to 22 wt%. Including.

  In this manner, the plate-like glass 11 is sandwiched between the molds (upper mold 51 and lower mold 52) in a state of being stacked on the work, and is placed in a predetermined heating molding apparatus. This apparatus is configured so that the inside can be maintained at a predetermined temperature. Further, in order to prevent an oxide film from being formed on a metal such as a substrate electrode, the inside of the thermoforming apparatus can be kept in an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere, or can be evacuated. In this example, the glass 11 is fused by slowly raising the temperature so that the temperature becomes lower than the glass softening point in a nitrogen atmosphere and lower than the melting point of the glass. The light emitting element 40 is sealed. Thereby, glass will be in a softened state. However, since glass has a temperature lower than the melting point, it is not liquid. The temperature for heating the glass 11 is preferably 200 ° C. or higher and 800 ° C. or lower. In particular, the glass can be softened by heating to a temperature of 500 ° C. or higher and 600 ° C. or lower.

  When the glass 11 is softened, the lower mold 52 and the upper mold 51 are pressed in this state. At this time, since the glass 11 is in a softened state, the glass 11 contacts the wiring substrate 30 without destroying the light emitting element 40.

  Note that an insulating member such as an epoxy resin may be disposed in advance in the gap between the light emitting element 40 bonded via the bump 32 and the substrate electrode and the wiring pattern 31. As a result, heat generated from the light emitting element 40 can be easily transmitted to the substrate electrode and the wiring pattern 31 side, and heat dissipation can be improved. Further, in the case of flip chip mounting, it can withstand the pressing by the sealing material in the sealing process.

  When the lower mold 52 and the upper mold 51 are cooled below a predetermined temperature, the upper mold 51 and the lower mold 52 are separated from each other, and the wiring substrate 30 to which the solidified glass 11 is fixed as the glass sealing portion 11a is installed. Take out from. Although the upper surface of the glass sealing portion 11a of the wiring board 30 thus taken out can be used as it is, it is preferably polished to be a flat surface in order to improve translucency. The glass sealing part 11a, the cavity array 20, and the wiring board 30 are cut from above using a cutting machine to obtain an individual light emitting device. By this cutting, the side surface of the glass sealing portion 11a is formed.

  After cutting the glass sealing portion 11a and the wiring substrate 30 with a cutting machine, until the contact portion between the glass sealing portion 11a and the wiring substrate 30 is reached or until the contact portion does not enter. The glass sealing part 11a may be divided together with the wiring board 30 by applying a predetermined stress. In order to divide the wiring board 30, the thickness (2/5) to (2/5) to the thickness of the wiring board 30 is provided on the back side opposite to the light emitting element mounting surface (the side on which the glass sealing portion is fixed). A cut is provided up to about (3/5), and it is divided along this cut portion. In this case, the side surface of the glass sealing portion 11a has a cut portion and a divided portion. The side surface of the glass sealing portion 11a can be polished. This is because variations in each product can be suppressed.

  The size of the separated light emitting device is 3.0 mm in length, 2.0 mm in width, and 1.5 mm in height. The size of the wiring board is 3.0 mm in length, 2.0 mm in width, and 1.0 mm in height. The glass sealing portion is smaller than the wiring board by the amount inserted by the cutting machine, and the size is 2.9 mm in length, 1.9 mm in width, and 0.5 mm in height.

  Furthermore, a film may be formed on the surface of the glass sealing portion 11a. This film may be formed before cutting the glass sealing portion. The film is formed by applying a predetermined sheet, spraying the part to be coated, a method of immersing the glass sealing part in a predetermined liquid, a method of screen printing a predetermined substance, sputtering or vapor deposition. There are methods.

  The light emitting device of the present invention includes a backlight for a mobile phone, an automobile headlight, an interior lighting, an outdoor lighting, a display device for displaying various data, various sensors such as a line sensor, a light source such as various indicators, It is used for display of measuring equipment, outdoor guide boards, in-vehicle equipment, etc. In particular, it can be applied to devices used under high-pressure and high-temperature environments such as sunlight, deep sea, and electric furnaces.

The figure which shows schematically a part of process in 1st Embodiment of the manufacturing method of the light-emitting device of this invention. Sectional drawing which shows the process following FIG. 1 schematically. Sectional drawing and bottom view which show an example of the wiring board in FIG. 2 roughly. Sectional drawing which shows roughly an example of the light-emitting device obtained by dividing | segmenting through the process of FIG. 1 thru | or FIG. Sectional drawing and bottom view which show schematically the modification of the wiring board in FIG. Sectional drawing and bottom view which show schematically the other modification of the wiring board in FIG. Sectional drawing and bottom view which show schematically the further another modification of the wiring board in FIG. The figure which shows schematically a part of process in 2nd Embodiment of the manufacturing method of the light-emitting device of this invention. FIG. 9 is a cross-sectional view and a bottom view schematically showing an example of a wiring board in FIG. 8. Sectional drawing which shows roughly an example of the light-emitting device obtained by dividing | segmenting through the process of FIG. 8 thru | or FIG. Sectional drawing and bottom view which show schematically the modification of the wiring board in FIG. Sectional drawing and bottom view which show schematically the other modification of the wiring board in FIG. FIG. 10 is a cross-sectional view and a bottom view schematically showing still another modification of the wiring board in FIG. 9. In a conventional wiring board with a cavity, a state where a glass sealing part is formed by hot-pressing a plate-like glass on a solid element mounted on a central part of an inner bottom surface of a cavity space having a rectangular vertical cross-sectional shape FIG. FIG. 15 is a cross-sectional view and a bottom view schematically showing the wiring board in FIG. 14.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10, 10a ... Wiring board with cavity, 11 ... Glass, 11a ... Glass sealing part, 20 ... Cavity array, 20a ... Cavity (cavity area), 21 ... Cavity space, 30 ... Wiring board, 30a ... Wiring board (board area) , 31... Substrate electrode and pattern wiring, 31 a... Conductive pattern member for mounting light emitting device, 31 b... Conductive pattern member for load distribution, 31 c... Conductive pattern member for connection, 32. Pattern member, 40 ... light emitting element

Claims (10)

A method of manufacturing a light emitting device in which a light emitting element is mounted on a wiring board and sealed with glass,
A conductive pattern member for mounting the light emitting device is formed on a part of the back surface of the substrate, and a pattern member for load distribution that generates a reaction force that cancels the bending moment due to the load from above the substrate and distributes the load is the light emitting element mounting portion. A connection pattern member formed on the back surface of the substrate corresponding to the conductive pattern member and the pattern member for load distribution is formed on the back surface of the substrate, the pattern members have the same thickness, and the connection pattern member is A step of manufacturing a wiring board formed thinner than the conductive pattern member and the load distribution pattern member;
Mounting a light emitting element on the wiring board;
Placing a glass sheet on a wiring board on which the light emitting element is mounted, heating the glass so that the glass has a temperature higher than the glass softening point and lower than the melting point , and press-molding the glass. A glass sealing step of sealing the light emitting element by fusing, and then cooling the glass;
Dividing the wiring board at a desired cutting position and dividing it into a desired light emitting device; and
Equipped with,
The _{glass, SiO 2, BaO, TiO 2} , Al 2 O 3, P 2 O 5, PbO, B 2 O 3, ZnO, Nb 2 O 5, Na 2 O, K 2 O, Sb 2 O 5, CaO , Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , ZnF ₂ , and a glass transition temperature Tg of 200 ° C. to 600 ° C. A method of manufacturing a light emitting device in which a light emitting element is mounted in a cavity space on a substrate with a cavity and sealed with glass,
A step of forming a wiring substrate with a cavity formed by fixing a bottom surface portion of a cavity array in which a plurality of cavity regions each having the cavity space are integrally formed on the wiring substrate;
Mounting the light emitting element on the wiring board in each cavity space;
A glass sealing step of sealing the light emitting element in the cavity space with glass;
Dividing the substrate with the cavity at a desired cutting position and dividing it into individual light emitting devices; and
Comprising
In the wiring board of the wiring board with the cavity array, the conductive pattern member for mounting the light emitting device is formed on a part of the back surface of the board, generates a reaction force that cancels the bending moment due to the load from above the board, and distributes the load. A pattern member for load distribution is formed on the back surface of the substrate corresponding to the vicinity of the center of the substrate, a connection pattern member connecting the conductive pattern member and the pattern member for load distribution is formed on the back surface of the substrate, and each pattern member is the same Having a thickness, the connection pattern member is formed thinner than the conductive pattern member and the pattern member for load distribution,
The _{glass, SiO 2, BaO, TiO 2} , Al 2 O 3, P 2 O 5, PbO, B 2 O 3, ZnO, Nb 2 O 5, Na 2 O, K 2 O, Sb 2 O 5, CaO , Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , ZnF ₂ , and glass transition temperature Tg is 200 ° C. to 600 ° C.,
In the glass sealing step, a plate-like glass is placed so as to close the opening front end surface of each cavity of the cavity array, and the glass sealing step is heated to a temperature equal to or higher than the glass softening point of the glass and lower than the melting point. A method of manufacturing a light-emitting device , wherein the glass is filled in the cavity space and is fused to seal the light-emitting element, and then the glass is cooled . A light emitting device having a pair of electrodes;
The light-emitting element is mounted on the upper surface, and the conductive pattern member for mounting the light-emitting device is formed on a part of the back surface of the substrate, generating a reaction force that cancels the bending moment due to the load from above the substrate, and distributing the load. A pattern member for the substrate is formed on the back surface of the substrate corresponding to the light emitting element mounting portion, a connection pattern member that connects the conductive pattern member and the pattern member for load distribution is formed on the back surface of the substrate, and each pattern member has the same thickness. The connection pattern member is formed thinner than the conductive pattern member and the load distribution pattern member, and
A substrate electrode provided on the wiring substrate and electrically connected to the electrode of the light emitting element;
A glass sealing part sealing the light emitting element;
Equipped with,
The glass sealing _{portion, SiO 2, BaO, TiO 2} , Al 2 O 3, P 2 O 5, PbO, B 2 O 3, ZnO, Nb 2 O 5, Na 2 O, K 2 O, Sb 2 O ₅ , CaO, Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , a light emitting device comprising any one of CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , and ZnF ₂ . A light emitting device having a pair of electrodes;
A cavity-side wiring board in which a bottom surface of a cavity having a cavity space communicating between upper and lower surfaces is fixed to an upper surface of the wiring board, and the light-emitting element is mounted on a substrate on a bottom surface portion in the cavity space ;
A substrate electrode provided on the substrate in the bottom surface of the cavity space and electrically connected to the electrode of the light emitting element;
A glass sealing portion that seals the light emitting element with glass filled in the cavity space ;
Equipped with,
In the wiring board with cavity, the conductive pattern member for mounting the light emitting device is formed on a part of the back surface of the substrate, generates a reaction force that cancels the bending moment due to the load from above the substrate, and distributes the load. A pattern member is formed on the back surface of the substrate corresponding to the vicinity of the center of the substrate, and a connection pattern member that connects the conductive pattern member and the pattern member for load distribution is formed on the back surface of the substrate, and each pattern member has the same thickness. The connection pattern member is formed thinner than the conductive pattern member and the load distribution pattern member,
The glass sealing _{portion, SiO 2, BaO, TiO 2} , Al 2 O 3, P 2 O 5, PbO, B 2 O 3, ZnO, Nb 2 O 5, Na 2 O, K 2 O, Sb 2 O ₅ , CaO, Li ₂ O, WO ₃ , Gd ₂ O ₃ , Bi ₂ O ₃ , ZrO ₂ , SrO, MgO, La ₂ O ₃ , Y ₂ O ₃ , AgO, LiF, NaF, KF, AlF ₃ , MgF ₂ , a light emitting device comprising any one of CaF ₂ , SrF ₂ , BaF ₂ , YF ₃ , LaF ₃ , SnF ₂ , and ZnF ₂ . Area of the pattern member for the load distribution is claim 3 or, characterized in that said is in the range of 10% to 99% relative to the area except for the area of the conductive pattern member for the light-emitting device mounting the substrate rear surface 5. The light emitting device according to 4 . The glass sealing portion, P ₂ O ₅ to 56~63wt%, 5~13wt% of Al ₂ O _3, comprises a ZnO 21~41wt%,
Further, B ₂ O ₃ , Na ₂ O, K ₂ O, Li ₂ O, MgO, WO ₃ , Gd ₂ O ₃ , ZrO ₂ are each 0 to 6 wt%, CaO and SrO are each 0 to 12 wt%, BaO, _5. The light emitting device according to claim 3, comprising 0 to 22 wt% of TiO ₂ , Nb ₂ O ₅ , and Bi ₂ O ₃ , respectively. The glass sealing portion, B ₂ O ₃ of 20~31wt%, the SiO ₂ 0.3~14.5wt%, 1~9wt% of Na ₂ O, ZnO and 40~58wt%, the Nb ₂ O ₅ 10-20 wt% included,
_{Further, BaO, TiO 2, Al 2} O 3, K 2 O, CaO, Li 2 O, ZrO 2, SrO, emission of claim claim 3 or 4, characterized in that MgO respectively containing 0～6Wt% apparatus. The glass sealing portion, B ₂ O ₃ and 15 to 30 wt%, a SiO ₂ 1~9wt%, 25~59wt% of ZnO, wherein 10～49Wt% of Nb ₂ O _5,
Furthermore, BaO, TiO ₂ , Nb ₂ O ₅ , CaO, Gd ₂ O ₃ , SrO, La ₂ O ₃ , Y ₂ O ₃ are each 0 to 19 wt%, Al ₂ O ₃ is 0 to 9 wt%, Bi ₂ O _{3 0~9wt%, Na 2 O, K} 2 O, Li 2 O, the light emitting device according to claim to claim 3 or 4, characterized in that the ZrO ₂ containing respectively 0~4wt%. The glass sealing portion, PbO, comprises B ₂ O _3, SiO _2, the PbO 29~69wt%, to claim to claim 3 or 4, characterized in that it comprises the B ₂ O ₃ 20 to 50 wt% The light-emitting device of description. The glass sealing portion, the filler, or phosphor, or light emitting device according to claim to claim 3 or 4, characterized in that the phosphor and the filler is formed by mixing.

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