JP2006103994A5 - - Google Patents
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- Publication number
- JP2006103994A5 JP2006103994A5 JP2004290328A JP2004290328A JP2006103994A5 JP 2006103994 A5 JP2006103994 A5 JP 2006103994A5 JP 2004290328 A JP2004290328 A JP 2004290328A JP 2004290328 A JP2004290328 A JP 2004290328A JP 2006103994 A5 JP2006103994 A5 JP 2006103994A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- weight
- oxide
- sintered body
- nitride sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- -1 Rare earth compound Chemical class 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910018514 Al—O—N Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000005238 degreasing Methods 0.000 claims 1
- 238000001513 hot isostatic pressing Methods 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004290328A JP4565954B2 (ja) | 2004-10-01 | 2004-10-01 | 導電性窒化ケイ素材料とその製造方法 |
| PCT/JP2005/017701 WO2006038489A1 (ja) | 2004-10-01 | 2005-09-27 | 導電性窒化ケイ素材料とその製造方法 |
| US11/664,072 US7612006B2 (en) | 2004-10-01 | 2005-09-27 | Conductive silicon nitride materials and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004290328A JP4565954B2 (ja) | 2004-10-01 | 2004-10-01 | 導電性窒化ケイ素材料とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006103994A JP2006103994A (ja) | 2006-04-20 |
| JP2006103994A5 true JP2006103994A5 (enExample) | 2007-05-10 |
| JP4565954B2 JP4565954B2 (ja) | 2010-10-20 |
Family
ID=36374141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004290328A Expired - Fee Related JP4565954B2 (ja) | 2004-10-01 | 2004-10-01 | 導電性窒化ケイ素材料とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4565954B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006182590A (ja) * | 2004-12-27 | 2006-07-13 | Yokohama National Univ | 導電性窒化ケイ素材料とその製造方法 |
| JP5088851B2 (ja) * | 2006-04-28 | 2012-12-05 | 東芝マテリアル株式会社 | 耐摩耗性部材用窒化珪素焼結体、その製造方法、およびそれを用いた耐摩耗性部材 |
| JP5170612B2 (ja) * | 2006-09-14 | 2013-03-27 | 国立大学法人横浜国立大学 | 導電性窒化ケイ素焼結体とその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004002067A (ja) * | 2002-05-29 | 2004-01-08 | Toshiba Corp | 耐摩耗性部材およびその製造方法 |
-
2004
- 2004-10-01 JP JP2004290328A patent/JP4565954B2/ja not_active Expired - Fee Related
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