JP2006093667A - Method for manufacturing semiconductor devices - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing boards with film patterns such as the insulating film, semiconductor film and conductive film through a simple process and a method for manufacturing low-cost semiconductor devices with a high yield. <P>SOLUTION: This method comprises multiple processes of: forming a first film 102 in a substrate 101, a process for spraying the solution with mask materials to the first film 102 to form a mask 103 on the first film 102; patternizing the above first film 102 with the above mask 103 to form an area 104 with a low wettability and an area 105 with a high wettability on the above substrate 101; removing the above mask 103; and spraying the solution 106 with insulating film, semiconductor film or conductive film materials to the above area 105 with a high wettability between the above areas 104 with a low wettability to produce patterns for the insulating film, semiconductor film or conductive film. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

    The present invention relates to a method for manufacturing a semiconductor device having a semiconductor element formed using a droplet discharge method typified by an ink jet method, and a technique for forming a film, a mask pattern, and a contact hole in each part of the semiconductor element. is there.

    In manufacturing a semiconductor device, for the purpose of reducing the cost of equipment and simplifying the process, it has been studied to use a droplet discharge device for forming a pattern of a thin film or wiring used for a semiconductor element.

    There was a problem that the solution discharged by the droplet discharge method spreads and spreads. In addition, the spread of spreading on the substrate was likely to vary. When wiring was formed by discharging a solution containing metal fine particles by the droplet discharge method, problems such as short-circuiting of wirings occurred. For this reason, when the distance between the wirings is narrow, a method is used in which a pattern made of a material with low wettability is formed, and this pattern is used to prevent a short circuit between the wirings.

As a method for forming this pattern, an organic material film containing a fluoroalkyl group is formed, and then UV irradiation is performed using a photomask pattern used in a so-called normal photolithography process (for example, Patent Documents). 1) has been used.
JP 2002-164635 A

    However, in the above method, since a photomask used in a normal photolithography process is used, it is not possible to reduce the cost of equipment and simplify the process.

    The present invention has been made in view of such problems, and a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, and a conductive film by a simple process, and further, a low cost, throughput. Another object is to provide a method for manufacturing a semiconductor device with a high yield.

    In the present invention, a region having different wettability is formed without going through a normal photolithography process (resist formation, exposure using a photomask, development), and this region is used to transfer the difference in wettability. Thus, an insulating film, a semiconductor film, or a conductive film pattern is formed.

One aspect of the present invention is a step of forming a first film on a substrate;
Discharging a solution containing a mask material onto the first film to form a mask on the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; It is characterized by having.

One aspect of the present invention is a step of forming a first film on a substrate;
Forming a mask on the first film by discharging a solution containing a surfactant and a mask material onto the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; It is characterized by having.

One aspect of the present invention is a step of forming a first film on a substrate;
Discharging a solution containing a mask material onto the first film to form a mask on the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; Have
The contact angle of the solution containing the mask material with respect to the first film is smaller than the contact angle of the solution containing the insulating film, semiconductor film, or conductive film material with respect to the first film.

One aspect of the present invention is a step of forming a first film on a substrate;
Forming a mask on the first film by discharging a solution containing a surfactant and a mask material onto the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; Have
The contact angle of the solution containing the mask material with respect to the first film is smaller than the contact angle of the solution containing the insulating film, semiconductor film, or conductive film material with respect to the first film.

Further, the region where the first film is present by the patterning is a region with low wettability, and the region from which the first film is removed is a region with high wettability.
In addition, the contact angle of the solution containing the insulating film, semiconductor film, or conductive film material in the region with low wettability is a solution containing the insulating film, semiconductor film, or conductive film material in the high wettability region. It is characterized by being larger than the contact angle.
The difference between the contact angle in the low wettability region and the contact angle in the high wettability region is 30 degrees or more.
The first film is made of a compound having a fluorocarbon chain.
The solution containing the mask material is discharged while the substrate is heated.

One aspect of the present invention is a step of forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over a substrate;
Forming a first mask on the first film by discharging a solution containing a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
The patterned first film is etched using the second mask, and the insulating film, the semiconductor film, or the conductive film is etched.

One aspect of the present invention is a step of forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over a substrate;
Forming a first mask on the first film by discharging a solution containing a surfactant and a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
The patterned first film is etched using the second mask, and the insulating film, the semiconductor film, or the conductive film is etched.

One aspect of the present invention is a step of forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over a substrate;
Forming a first mask on the first film by discharging a solution containing a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
Etching the patterned first film using the second mask and etching the insulating film, semiconductor film, or conductive film,
The contact angle of the solution containing the first mask material with respect to the first film is smaller than the contact angle of the solution containing the second mask material with respect to the first film.

One aspect of the present invention is a step of forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over a substrate;
Forming a first mask on the first film by discharging a solution containing a surfactant and a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
Etching the patterned first film using the second mask and etching the insulating film, semiconductor film, or conductive film,
The contact angle of the solution containing the first mask material with respect to the first film is smaller than the contact angle of the solution containing the second mask material with respect to the first film.

Further, the region where the first film is present by the patterning is a region with low wettability, and the region from which the first film is removed is a region with high wettability.
The contact angle of the solution containing the second mask material in the low wettability region is larger than the contact angle of the solution containing the second mask material in the high wettability region. Features.
The difference between the contact angle in the low wettability region and the contact angle in the high wettability region is 30 degrees or more.
The first film is made of a compound having a fluorocarbon chain.
Further, the solution containing the first mask material is discharged while the substrate is heated.

    As a method of forming the first film, a solution in which the material of the first film is diluted is applied on the substrate, or the solution in which the material is diluted and the substrate are placed in the same sealed container, and the vapor of the material is discharged. You may make it adsorb | suck to a board | substrate.

    A surfactant may be added to the solution containing the mask material. As a result, the surface tension of the solution can be lowered, and a mask (first mask) can be formed without causing problems such as disconnection.

    The mask (first mask) is formed by a liquid phase method or a printing method using a solution containing a mask material. Typical examples of the liquid phase method include a droplet discharge method, an ink jet method, a spin coat method, a roll coat method, and a slot coat method.

    The insulating film, semiconductor film, conductive film material, and second mask material are formed by a liquid phase method using a solution containing these materials. Typical examples of the liquid phase method include a droplet discharge method, an ink jet method, a spin coat method, a roll coat method, and a slot coat method.

The liquid contact angle is large in the low wettability region, and the liquid contact angle is small in the high wettability region. The difference between the contact angle of the low wettability region and the contact angle of the high wettability region is 30 degrees, preferably 40 degrees or more.
When the solution is applied or discharged onto two regions with different contact angles, the solution spreads on the surface of the highly wettable region and is repelled by the hemisphere at the interface with the poorly wettable region. Thus, each mask pattern can be formed.

    Therefore, the contact angle of the solution containing the insulating film, the semiconductor film, or the conductive film material and the contact angle of the solution containing the second mask material in the region with low wettability are the same as those in the region with high wettability. It is desirable that the contact angle of the solution containing the film or the conductive film material is larger than the contact angle of the solution containing the second mask material. In addition, the difference between the contact angle in the low wettability region and the contact angle in the high wettability region is preferably 30 degrees or more.

    A solution containing an insulating film, a semiconductor film, a conductive film material, or a second mask material is preferably repelled against the first film. On the other hand, the solution containing the mask (first mask) material needs to prevent disconnection or the like. Therefore, the contact angle of the solution containing the mask (first mask) material with respect to the first film is the contact angle with respect to the first film of the solution containing the insulating film, the semiconductor film, or the conductive film material or the second mask material. Should be smaller.

    The first film remaining after the formation of the insulating film, the semiconductor film, the conductive film, or the second mask may be completely removed.

    In addition, using the second mask formed as described above, an insulating film, a semiconductor film, or a conductive film provided over the substrate can be etched to form a pattern.

    As the film pattern, a pattern having a line width of 1 to 500 μm is formed, but the present invention is not limited to this, and a fine line pattern of 1 μm or less can be formed.

    According to the present invention, an insulating film having a desired shape, a semiconductor film, a conductive film, and an insulating film in which contact holes are formed can be formed. Typically, an insulating film such as a gate insulating film, an interlayer insulating film, a protective film, an insulating film in which a contact hole is formed, a semiconductor film such as a channel formation region, a source region, and a drain region, and a source electrode, a drain electrode, Examples include conductive films such as wiring, gate electrodes, pixel electrodes, and antennas.

    Examples of the semiconductor element include a TFT, a field effect transistor (FET), a MOS transistor, a bipolar transistor, an organic semiconductor transistor, an MIM element, a memory element, a diode, a photoelectric conversion element, a capacitor element, and a resistance element.

    As the semiconductor device, an integrated circuit including a semiconductor element, a display device, a wireless tag, an IC tag, an IC card, and the like can be given. Typical examples of the display device include a liquid crystal display device, a light emitting display device, DMD (Digital Micromirror Device), PDP (Plasma Display Panel), FED (Field Emission Display). And display devices such as electrophoretic display devices (electronic paper). The TFT is a forward staggered TFT, an inverted staggered TFT (channel etch TFT or channel protection TFT), a top gate coplanar TFT, a bottom gate coplanar TFT, or the like.

    The display device refers to a device using a display element, that is, an image display device. In addition, a connector, for example, a module in which a flexible printed wiring (FPC), TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the display panel, and a printed wiring board is attached to the end of the TAB tape or TCP. It is assumed that the display device includes all provided modules or modules in which an IC (Integrated Circuit) or a CPU is directly mounted on a display element by a COG (Chip On Glass) method.

    According to the present invention, a film pattern having a desired shape can be formed at a desired location. In addition, a film functioning as an interlayer insulating film, a planarization film, a gate insulating film, or the like can be selectively formed at a desired portion. In addition, film patterns can be formed without going through exposure / development processes using resist mask patterns and photomask patterns, and insulating films with contact holes can be formed, greatly simplifying the process compared to conventional methods. can do. Furthermore, a film pattern having an arbitrary shape can be formed at an arbitrary place.

    As described above, by using the present invention, a semiconductor element and a semiconductor device can be accurately formed by a simple process without performing an exposure / development process using a resist mask pattern or a photomask pattern. Thus, a method for manufacturing a semiconductor element or a semiconductor device with low cost and high throughput and yield can be provided.

    Further, since the plasma treatment is not performed, for example, when the base film is a silicon film, a silicon oxide film, a silicon nitride film or the like, no damage is caused.

    Further, when forming a mask or a conductive film, a droplet discharge method is used, so that the relative positions of the nozzle and the substrate, which are droplet discharge ports containing the materials of those films, can be adjusted. By changing it, droplets can be ejected to any location, and depending on the relative relationship between the nozzle diameter, the droplet ejection amount, and the moving speed of the nozzle and the substrate on which the ejection is formed, the thickness and thickness of the pattern to be formed Since the thickness can be adjusted, these films can be discharged and formed at a desired location with high accuracy.

    The best mode for carrying out the invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be construed as being limited to the description of the embodiment modes.

(First embodiment)
In the present embodiment, a process of patterning a first film formed on a substrate and forming a film pattern having a desired shape using this pattern will be described with reference to FIG.

    As shown in FIG. 1A, a first film 102 is formed over a substrate 101.

    As the substrate 101, a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a plastic substrate having heat resistance that can withstand a processing temperature in a later process, a silicon wafer, a metal plate, or the like can be used. In this case, diffusion of impurities and the like from the substrate side, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), is prevented. An insulating film may be formed. A substrate in which an insulating film such as silicon oxide or silicon nitride is formed on the surface of a metal such as stainless steel or a semiconductor substrate can also be used. Further, as the substrate 101, a large area substrate such as 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm can be used. Here, a glass substrate is used as the substrate 101.

    When a plastic substrate is used as the substrate 101, it is preferable to use a substrate having a relatively high glass transition point, such as PC (polycarbonate), PES (polyethylene sulfide), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate). .

    The first film 102 can be formed by applying or discharging a material for forming the first film. Further, the material and the substrate can be formed on the substrate by placing them in the same sealed container.

A typical example of the material for forming the first film is a compound having a fluorocarbon chain. As an example of the composition of the compound having a fluorocarbon chain, a silane coupling agent represented by a chemical formula of R _n —Si—X _{4 -n} (n = 1, 2, 3) can be given. Here, R is a substance containing a relatively inert group such as an alkyl group. X consists of halogen, methoxy group, ethoxy group, acetoxy group or hydroxyl group.

In addition, as a silane coupling agent, wettability can be reduced by using a fluorine-based silane coupling agent (fluoroalkylsilane (FAS)) having a fluoroalkyl group in R. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. As typical FAS, fluoroalkylsilanes (hereinafter referred to as FAS) such as heptadefluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, and trifluoropropyltrimethoxysilane. Is mentioned.

    Further, as an example of the composition of the first film forming material, a material having a fluorocarbon chain (fluorine resin) can be used. Examples of fluorine resins include polytetrafluoroethylene (PTFE; tetrafluoroethylene resin), perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkyl vinyl ether copolymer resin), and perfluoroethylene propene copolymer (PFEP; four fluoropolymer). Ethylene-hexafluoropropylene copolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE; tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride (PVDF; vinylidene fluoride resin), polychlorotrifluoroethylene (PCTFE; trifluoroethylene chloride resin), ethylene-chlorotrifluoroethylene copolymer (ECTFE; trifluoroethylene chloride-ethylene copolymer resin), polytetrafluoroethylene-perfluorodioxide Rukoporima (TFE / PDD), polyvinyl fluoride (PVF; a vinyl fluoride resin), or the like can be used.

    Even those having no fluorocarbon chain can be used for the first film. For example, octadecyltrimethoxysilane or the like can be used as the organic silane.

    Examples of the solvent used for the material include n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, decahydronaphthalene, squalane and the like. The hydrocarbon solvent or tetrahydrofuran is used.

In addition, as a method for forming the first film, for example, a film having no fluorocarbon chain can be formed, and the surface thereof can be irradiated with fluorine plasma.
Separately, an electrode provided with a dielectric can be prepared, and plasma treatment can be performed by generating plasma so that the dielectric is exposed to plasma using air, oxygen, or nitrogen. In this case, the dielectric need not cover the entire electrode surface. As the dielectric, a fluorine-based resin can be used. When a fluororesin is used, surface modification is performed by forming a CF ₂ bond on the surface of the first film, and the same characteristics as those of the compound having a fluorocarbon chain can be given.
As the film having no fluorocarbon chain, a material in which a water-soluble resin such as polyvinyl alcohol (PVA) is mixed with a solvent such as H ₂ O can be used. Moreover, you may use combining PVA and another water-soluble resin. Also, organic resins such as acrylic resin, polyimide resin, melamine resin, polyester resin, polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether, polyurethane, polyamide (nylon), furan resin, diallyl phthalate resin, resist material, etc. Can be used.

    Next, a solution containing a mask material is discharged onto the first film 102 by a droplet discharge method.

    As the mask material, a water-soluble resin such as polyvinyl alcohol (PVA) can be used. Moreover, you may use combining PVA and another water-soluble resin. In addition, organic resins such as acrylic resin, polyimide resin, melamine resin, polyester resin, polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether, polyurethane, polyamide (nylon), furan resin, diallyl phthalate resin, resist material, etc. are used. be able to. Hot melt inks can also be used. Since the hot melt ink is based on a thermoplastic polymer that is solid at room temperature, a mask can be formed simply by removing the solvent.

    A surfactant may be added to the solution containing the mask material. This is because the surface tension of the solution can be lowered by adding the surfactant, and the solution can be applied on the first film 102 without causing problems such as disconnection.

    As the surfactant, a fluorine-based surfactant can be used. For example, a surfactant having a fluoroalkyl group or the like can be used. Of course, it is not limited to this.

    As the solvent, a solution using a polar solvent such as water, alcohol, ether, dimethylformamide, dimethylacetamide, dimethylsulfoxide, N-methylpyrrolidone, hexamethylphosphamide, chloroform, methylene chloride or the like can be used.

    The diameter of the nozzle used in the droplet discharge method is set to 0.1 to 50 μm (preferably 0.6 to 26 μm), and the discharge amount of the composition discharged from the nozzle is 0.00001 pl to 50 pl (preferably 0.0001-10 pl). This discharge amount increases in proportion to the size of the nozzle diameter. Further, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, and is preferably set to about 0.1 to 2 mm.

    The viscosity of the composition used in the droplet discharge method is preferably 300 mPa · s or less, which is to prevent drying and to smoothly discharge the composition from the discharge port. Note that the viscosity, surface tension, and the like of the composition may be appropriately adjusted according to the solvent to be used and the application.

    The solution can also be discharged while heating the substrate. Thus, the solvent can be removed immediately after application, and the mask 103 can be formed.

    The width between the masks depends on the width of the film pattern to be finally formed. In the present specification, a film pattern having a width of 1 to 500 μm is formed, but it is needless to say that the film pattern is not limited to this.

    Next, when the solvent has not been removed, the solvent of the solution containing the mask material is dried to form the mask 103. Further, the mask 103 may be formed by heating and baking as necessary.

    Next, the portion of the first film 102 where the mask 103 is not formed is removed, and an island-shaped first film 110 is formed. Although the removal method depends on the constituent materials, it can be removed by irradiation with ultraviolet rays, dry etching, or wet etching.

    Next, the mask 103 is removed by a stripping solution, ashing or the like. As a result, a highly wettable region 105 and a low wettability region 104 can be formed on the substrate.

    Next, a solution containing an insulating film, a semiconductor film, and a conductive film material is applied over the region 105 having high wettability and between the regions 105 sandwiched between regions having low wettability.

  Here, the relationship between the low-paintability region 104 and the high-paintability region 105 will be described with reference to FIG. The region with low wettability is a region where the liquid contact angle θ1 is large as shown in FIG. On this surface the liquid is repelled by a hemisphere. On the other hand, the region with high wettability is a region where the liquid contact angle θ2 is small on the surface. On this surface, the liquid spreads and spreads.

    For this reason, when two regions having different contact angles are in contact with each other, a region having a relatively small contact angle is a region having high paintability, and a region having a larger contact angle is a region having low paintability. When the solution is applied or discharged onto two regions with different contact angles, the solution spreads on the surface of the highly wettable region and is repelled by the hemisphere at the interface with the poorly wettable region. Thus, each mask pattern can be formed.

    The difference between the contact angle θ1 of the low wettability region and the contact angle θ2 of the high wettability region is 30 degrees or more, preferably 40 degrees or more. As a result, the solution is repelled on the surface of the region with low wettability, and each mask pattern can be formed in a self-aligned manner in the region with high wettability. For this reason, among the enumerated methods and materials for forming the first film, when the difference between the contact angles is 30 degrees or more, preferably 40 degrees or more, the region formed of the material having a small contact angle is A region with high wettability, and a region formed of a material with a large contact angle can be a region with low wettability. Similarly, among the solutions 106 which will be enumerated later as an insulating film, a semiconductor film or a conductive film material, a material having a small contact angle when the difference between the contact angles is 30 degrees or more, preferably 40 degrees or more The region formed with the above can be a region with high wettability, and the region formed with a material with a large contact angle can be a region with low wettability.

    Therefore, the contact angle of a solution containing an insulating film, a semiconductor film, or a conductive film material in a region with low wettability is larger than the contact angle of a solution containing an insulating film, a semiconductor film, or a conductive film material in a high wettability region. It is desirable to be large. In addition, the difference between the contact angle in the low wettability region and the contact angle in the high wettability region is preferably 30 degrees or more.

    Further, the solution 106 containing an insulating film, a semiconductor film, or a conductive film material is preferably repelled with respect to the first film. On the other hand, the solution containing the mask material needs to prevent disconnection or the like. Therefore, the contact angle of the solution containing the mask material with respect to the first film is preferably smaller than the contact angle of the solution containing the insulating film, the semiconductor film, and the conductive film material with respect to the first film.

    If the surface has irregularities, it is difficult to form a desired pattern. However, when the surface has irregularities, the contact angle further increases in the region where the paintability is low. That is, paintability is further reduced. On the other hand, the contact angle is further lowered in the region where the paintability is high. That is, paintability is further improved. Therefore, when a material with low wettability and a material with high wettability are applied or discharged onto each surface having unevenness and fired, a desired pattern can be formed even if the surface has unevenness.

    As the material 106 discharged to the highly wettable region, an insulating material, a conductive material, and a semiconductor material can be used as appropriate. Representative examples of insulating materials include organic resins such as acrylic resin, polyimide resin, melamine resin, polyester resin, polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether, polyurethane, polyamide (nylon), furan resin, diallyl phthalate resin, etc. , Siloxane polymer, polysilazane, PSG (phosphorus glass), and BPSG (phosphorus boron glass) can be used.

    Alternatively, a solution using a polar solvent such as water, alcohol, ether, dimethylformamide, dimethylacetamide, dimethylsulfoxide, N-methylpyrrolidone, hexamethylphosphamide, chloroform, methylene chloride or the like can be used.

    As a typical example of the conductive material, a conductive material dissolved or dispersed in a solvent can be used. As conductors, Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, Ba and other metals, halogenated Silver fine particles or the like, or dispersible nanoparticles can be used. Alternatively, ITO used for the transparent conductive film, ITO containing silicon oxide, organic indium, organic tin, zinc oxide (ZnO), titanium nitride (TiN), or the like can be used.

    An organic semiconductor material can also be used as a representative example of the semiconductor material. As the organic semiconductor material, a π-electron conjugated organic material or polymer material whose skeleton is composed of conjugated double bonds is desirable. Typically, a soluble organic material or a polymer material such as polythiophene, poly (3-alkylthiophene), a polythiophene derivative, or pentacene can be used.

    As a method for applying the solution containing the material, a droplet discharge method, an ink jet method, a spin coating method, a roll coating method, a slot coating method, or the like can be used.

    Next, as shown in FIG. 1C, a film pattern 106 having a desired shape is formed by applying a solution containing the insulating material, conductive material, or semiconductor material, followed by drying and baking. As a result, when the material is an insulating material, the film pattern becomes an insulating layer having a desired shape. In the case of a conductive material, the film pattern is a conductive layer having a desired shape. In the case of a semiconductor material, the film pattern is a semiconductor layer having a desired shape. Thereafter, as shown in FIG. 1D, the first film may be removed.

    Through the above steps, a film pattern having a desired shape can be formed without using any known photolithography process. Therefore, the number of manufacturing steps and manufacturing costs can be significantly reduced.

(Second Embodiment)
In the present embodiment, the first film is patterned on the insulating film, semiconductor film, or conductive film, and the process of patterning the insulating film, semiconductor film, or conductive film into a desired shape using this pattern is shown in FIG. Use to show.

    As shown in FIG. 2A, an insulating film, a semiconductor film, or a conductive film 201 is formed over the substrate 101.

    As the substrate 101, the one shown in the first embodiment can be used. Further, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), and the like for preventing diffusion of impurities from the substrate side. An insulating film may be formed.

    The insulating film, the semiconductor film, or the conductive film 201 can be patterned into a desired shape. That is, an insulating film, a semiconductor film, or a conductive film can be formed into a desired shape.

    Examples of the insulating film 201 include semiconductor oxides and nitrides such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, and a silicon nitride film, an inorganic insulator, and an organic insulator. As a forming method, a known CVD method, sputtering method, coating method, vapor deposition method or the like can be used.

    Examples of the semiconductor film 201 include silicon, germanium, GaAs, and an organic semiconductor film. As a forming method, a known CVD method, sputtering method, coating method, vapor deposition method or the like can be used. It may be either amorphous or crystalline.

    As the conductive film 201, a metal film, a transparent conductive film (ITO, ITO containing silicon oxide, IZO, or the like) can be given.

    Next, the first film 102 is formed over the insulating film, the semiconductor film, or the conductive film 201. As the material, the solvent, and the formation method for forming the first film, those described in Embodiment Mode 1 can be used.

    Next, as shown in FIG. 2A, a solution containing a first mask material is discharged over the first film 102 by a droplet discharge method, whereby a first mask 103 is formed.

    As the first mask material, the materials shown in the material containing the mask material of the first embodiment can be used. A surfactant may be added. Furthermore, the solvent shown in the first embodiment can also be used.

    Next, the portion of the first film 102 where the mask 103 is not formed is removed. Thereafter, the mask 103 is removed. Thus, a highly wettable region 105 and a low wettability region 104 can be formed over the insulating film, the semiconductor film, or the conductive film 201 (FIG. 2B).

Next, as shown in FIG. 2C, a solution containing the second mask material is applied between the regions 105 having high wettability and sandwiched between the regions having low wettability. The second mask 202 is formed by baking or the like. As shown in FIG. 2C, a solution containing the second mask material is applied to a region where the first film 210 is not formed, that is, a highly wettable region. As a coating method, a droplet discharge method, an inkjet method, a spin coating method, a roll coating method, a slot coating method, or the like can be used.
As the second mask material, those shown as the mask material of the first embodiment can be used. The solvent shown in the first embodiment can also be used.

    As shown in the first embodiment, the contact angle of the solution containing the second mask material in the low wettability region is the contact angle of the solution containing the second mask material in the high wettability region. It is desirable to be larger than the corner. In addition, the difference between the contact angle in the low wettability region and the contact angle in the high wettability region is preferably 30 degrees or more. Thereby, a mask pattern can be formed in a self-aligning manner.

    The solution containing the second mask material may be repelled against the first film. On the other hand, the solution containing the first mask material needs to prevent disconnection or the like. Therefore, the contact angle of the solution containing the first mask material with respect to the first film is preferably smaller than the contact angle of the solution containing the second mask material with respect to the first film.

    Thereafter, it is dried and fired as necessary. As a result, the second mask 202 which is an etching mask pattern can be formed.

    Next, as shown in FIG. 2D, the first film 210 is removed using a second mask. In this embodiment, it is removed by ashing. Thereafter, the exposed region of the insulating film, semiconductor film, or conductive film on the substrate can be etched by a known method such as dry etching or wet etching to form the film pattern 203 having a desired shape. When the second mask pattern is columnar or cylindrical, the film pattern is a film having a contact hole.

    Note that, as shown in FIG. 2E, the second mask 202 may be removed to expose a film pattern 203 having a desired shape.

    Through the above steps, a mask pattern can be formed without using a known photolithography step. For this reason, it is possible to etch the film into a desired shape with a smaller number of steps than in the past. It is also possible to form a film pattern or a good contact hole with a smaller number of processes than in the past.

(Third embodiment)
Hereinafter, a method for manufacturing a semiconductor element will be described. In the following embodiments, a TFT is used as a semiconductor element. However, the present invention is not limited to this, and an organic semiconductor transistor, a diode, an MIM element, a memory element, a diode, a photoelectric conversion element, a capacitor element, and a resistor are used. An element etc. can be used.

    In this embodiment mode, a process of forming a channel etch type TFT as a typical example of an inverted stagger type TFT as a semiconductor element using the present invention will be described with reference to FIGS.

    As shown in FIG. 3A, a gate electrode 301 is formed over the substrate 101. Note that a silicon oxide film, a silicon nitride film, or the like is formed on the substrate as necessary. As a method for forming the gate electrode, the conductive layer is formed using a droplet discharge method, a printing method, an electroplating method, a PVD method, or a CVD method. Here, a gate electrode is formed on the substrate 101 by using the method shown in the first embodiment. In this case, an etching process using a mask pattern is not necessary, so that the manufacturing process can be greatly simplified.

    First, a first film is formed over a substrate, and a first mask is formed by discharging a solution containing a mask material onto the first film by a droplet discharge method. Thereafter, a portion of the first film where the first mask is not formed is removed by a method such as ultraviolet irradiation to form a low wettability region and a high wettability region on the substrate. Thereafter, the first mask is removed. As the solution containing the first film and the first mask material, those described in the first embodiment and the second embodiment can be used.

    Next, the first embodiment is applied to a region with high wettability (region where the island-shaped first mask is not formed) sandwiched between regions with low wettability (region where the island-shaped first mask is formed). A solution obtained by dissolving or dispersing the conductor described in the above in a solvent is discharged by a droplet discharge method. After that, the first film that forms a region with low wettability is removed. Then, the gate electrode 301 can be formed.

    In addition, it is preferable to use what dissolved or disperse | distributed the material of either gold | metal | money, silver, and copper in the solvent considering the specific resistance value as the composition discharged from a discharge outlet. More preferably, low resistance and inexpensive silver or copper may be used. However, when copper is used, a barrier film may be provided as a countermeasure against impurities. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone may be used.

    Here, as a barrier film in the case of using copper as a wiring, an insulating or conductive material containing nitrogen such as silicon nitride, silicon oxynitride, aluminum nitride, titanium nitride, or tantalum nitride (TaN) is used. These may be formed by a droplet discharge method.

    The viscosity of the composition used for the droplet discharge method is preferably 5 to 20 mPa · s, which is to prevent the drying from occurring and to smoothly discharge the composition from the discharge port. . The surface tension is preferably 40 mN / m or less. Note that the viscosity of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), zinc oxide added with gallium (GZO), indium tin oxide containing silicon oxide, and organic tin are dissolved or dispersed in a solvent. The viscosity of the composition obtained by dissolving or dispersing silver in a solvent is 5 to 20 mPa · s, the viscosity of a composition obtained by dissolving or dispersing gold in a solvent is 10 to 20 mPa · s. s.

    Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. 1 μm or less is preferable. The composition is formed by a known method such as an electrolytic method, an atomizing method, or a wet reduction method, and its particle size is generally about 0.5 to 10 μm. However, when formed in a gas evaporation method, the nanomolecules protected by the dispersant are as fine as about 7 nm, and the nanoparticles are aggregated in the solvent when the surface of each particle is covered with a coating agent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

    The step of discharging the composition may be performed under reduced pressure. This is because the solvent of the composition volatilizes before the composition is discharged and landed on the object to be processed, and the subsequent drying and firing steps can be omitted or shortened. After discharging the solution, one or both of drying and baking steps are performed by laser light irradiation, rapid thermal annealing, a heating furnace, or the like under normal pressure or reduced pressure depending on the material of the solution. The drying and firing steps are both heat treatment steps. For example, the drying is performed at 100 ° C. for 3 minutes, and the firing is performed at 200 to 350 ° C. for 15 to 120 minutes. Time is different. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate and the like, but is 100 to 800 ° C. (preferably 200 to 350 ° C.). And By this step, the solvent in the solution is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and shrunk to accelerate fusion and fusion. The atmosphere is an oxygen atmosphere, a nitrogen atmosphere or air. However, it is preferable to perform in an oxygen atmosphere in which the solvent in which the metal element is decomposed or dispersed is easily removed.

  Note that the conductive layer formed by a droplet discharge method is formed by irregularly overlapping fine particles, which are conductors, three-dimensionally. That is, it is composed of three-dimensional aggregate particles. For this reason, the surface has fine unevenness. Further, since the fine particles are fired and the particle size of the particles is increased by the heat of the light absorbing layer and the heating time, the layer has a large surface height difference.

For the laser light irradiation, a continuous wave or pulsed gas laser or solid-state laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid-state laser include a laser using a crystal such as YAG or YVO ₄ doped with Cr, Nd, or the like. Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. In addition, a so-called hybrid laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that emits ultraviolet light or infrared light in an inert gas atmosphere to rapidly increase the temperature from several microseconds to several minutes. This is done by applying heat instantaneously. Since this treatment is performed instantaneously, there is an advantage that only the outermost thin film can be heated substantially without affecting the lower layer film.

    Next, a gate insulating film 302 is formed over the gate electrode 301. The gate insulating film 302 is formed with a single layer or a stacked structure of an insulating film containing silicon nitride, silicon oxide, or other silicon by a thin film formation method such as a plasma CVD method or a sputtering method. The gate insulating film preferably has a stacked structure of a silicon nitride film (silicon nitride oxide film), a silicon oxide film, and a silicon nitride film (silicon nitride oxide film) from the side in contact with the gate electrode layer. In this structure, since the gate electrode is in contact with the silicon nitride film, deterioration due to oxidation can be prevented.

    Next, a first semiconductor film 303 is formed over the gate insulating film 302. As the first semiconductor film 303, an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed (also referred to as SAS), and crystal grains of 0.5 nm to 20 nm are formed in the amorphous semiconductor. A film having any state selected from a microcrystalline semiconductor and a crystalline semiconductor that can be observed is formed. In particular, a microcrystalline state in which grains of 0.5 nm to 20 nm can be observed is called a so-called microcrystal (μc). In any case, a semiconductor film having a thickness of 10 to 60 nm whose main component is silicon, silicon germanium (SiGe), or the like can be used.

The SAS is a semiconductor having an intermediate structure between an amorphous structure and a crystal structure (including single crystal and polycrystal) and having a third state that is stable in terms of free energy. It also contains a crystalline region with short-range order and lattice distortion. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is the main component, the Raman spectrum shifts to a lower wave number side than 520 cm ^−1. ing. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. Further, because of the termination of dangling bonds, the SAS contains 1 atomic% or more of hydrogen or halogen.

SAS can be obtained by glow discharge decomposition of a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. The formation of the SAS can be facilitated by diluting the silicide gas with one or plural kinds of rare gas elements selected from hydrogen, hydrogen and helium, argon, krypton, and neon. At this time, it is preferable to dilute the silicide gas so that the dilution rate is in the range of 10 to 1000 times. Further, the SAS can be formed by using Si ₂ H ₆ and GeF ₄ and diluting with helium gas. The reaction generation of the coating by glow discharge decomposition is preferably performed under reduced pressure, and the pressure may be in the range of about 0.1 Pa to 133 Pa. The power for forming the glow discharge may be high frequency power of 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or lower, and a substrate heating temperature of 100 to 250 ° C. is recommended.

The crystalline semiconductor film can be formed by crystallizing an amorphous semiconductor film by heating or laser irradiation. Alternatively, a crystalline semiconductor film may be directly formed. In this case, a crystalline semiconductor film is directly formed using heat or plasma using a fluorine-based gas such as GeF ₄ or F ₂ and a silane-based gas such as SiH ₄ or Si ₂ H _6. Can do.

    In addition, an amorphous semiconductor film is formed by a known means (sputtering method, LPCVD method, plasma CVD method, or the like), and a solution containing a metal element (such as nickel) that promotes crystallization of silicon, for example, is used. The amorphous semiconductor film is held and dehydrogenated (500 ° C., 1 hour), and then thermal crystallization (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. It can also be formed. Thereafter, laser light may be irradiated to further increase the crystallinity.

When a crystalline semiconductor film is formed by laser crystallization, a pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, Ti : A sapphire laser or the like can be used. In the pulse emission type, it is possible to use one having a frequency of MHz. In the case of using these lasers, it is preferable to use a method in which a laser beam emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. The practitioner can select the crystallization conditions appropriately.

    Note that the first semiconductor film 303 can be directly formed into an island shape using an organic semiconductor material by a printing method, a spray method, a droplet discharge method, or the like. In this case, since the etching process is not necessary, the number of processes can be reduced. As the organic semiconductor material used in the present invention, a π-electron conjugated organic material or polymer material whose skeleton is composed of conjugated double bonds is desirable. Typically, a soluble polymer material such as polythiophene, poly (3-alkylthiophene), a polythiophene derivative, or pentacene can be used.

    In addition, as an organic semiconductor material that can be used in the present invention, there is a material that can form a first semiconductor film by processing after forming a soluble precursor. Examples of the organic semiconductor material that passes through such a precursor include polythienylene vinylene, poly (2,5-thienylene vinylene), polyacetylene, a polyacetylene derivative, and polyarylene vinylene.

    When converting the precursor into an organic semiconductor, a reaction catalyst such as hydrogen chloride gas is added as well as heat treatment. Typical solvents for dissolving these soluble organic semiconductor materials include toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butyl cellosolve, cyclohexane, NMP (N-methyl-2 -Pyrrolidone), cyclohexanone, 2-butanone, dioxane, dimethylformamide (DMF), THF (tetrahydrofuran), or the like can be applied.

    Next, a second semiconductor film 304 having one conductivity type (p-type and n-type) is formed. In the case of forming an n-channel TFT, the second semiconductor film 304 having conductivity is added with an element belonging to Group 15, typically phosphorus or arsenic. In the case of forming a p-channel TFT, an element belonging to Group 13, typically boron, is added. The second semiconductor film is formed by a plasma CVD method in which a gas containing a group 13 or group 15 element such as boron, phosphorus, or arsenic is added to a silicide gas.

    Heat treatment may be performed after the second semiconductor film 304 is formed. For example, in the case where the first semiconductor film 303 is crystallized using a metal element (such as nickel), the metal element contained in the first semiconductor film is converted into the second semiconductor film by this heat treatment. Gettered.

    Next, the conductive second semiconductor film 304 and the first semiconductor film 303 are etched into a desired shape. Here, a mask pattern is formed on the second semiconductor film 304 by the technique of the second embodiment and etched into a desired shape.

    First, a first film is formed over the second semiconductor film 304. The first film plays the same role as the first film used in forming the gate electrode. That is, a region with low wettability and a region with high wettability are formed on the second semiconductor film. As the first film, those described in the first embodiment and the second embodiment can be used.

  Next, a second mask is formed by discharging a solution containing the second mask material onto the first film. As the second mask material and the solvent, those described as the mask material and the solvent in the first embodiment and the second embodiment can be used.

    A region having low wettability (a region where the island-shaped first film 110 is formed) and a region having high wettability are formed over the second semiconductor film 304 by patterning the first film using the second mask. (A region where the island-like first film 110 is not formed) is formed. Thereafter, the second mask is removed.

    A third mask 305 is formed by discharging a solution containing the third mask material to a region with high wettability sandwiched between regions with low wettability. The third mask 305 can be the same as that used for the first mask and the second mask, but may be formed using a heat-resistant polymer material, such as an aromatic ring or a heterocyclic ring. A polymer having a main chain and a small number of aliphatic moieties and a highly polar heteroatom group can be used. Typical examples of such a polymer substance include polyimide and polybenzimidazole.

Using the third mask 305, the patterned first film, second semiconductor film, and first semiconductor film are etched into a desired shape. Thus, a first semiconductor region 312 and a second semiconductor region 313 having a desired shape are formed. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl ₄ or CCl ₄ , a fluorine-based gas typified by CF ₄ , SF ₆ , NF ₃ , CHF ₃ , or the like, or O ₂ is used. Can be used. The third mask 305 is removed after etching.

    Next, the source and drain electrodes 314 are formed over the second semiconductor region 313 using a conductive material. As the conductive material, a material similar to the material used for the gate electrode 301 is dissolved or dispersed in a solvent. Here, a composition containing Ag (hereinafter referred to as “Ag paste”) is used, and each electrode having a film thickness of 600 to 800 nm is formed through the steps shown in the first embodiment as when forming a gate electrode. .

Note that the firing of the Ag paste is performed in an O ₂ atmosphere, organic substances such as binders contained in the Ag paste (thermosetting resin) is decomposed, it is possible to obtain a Ag film containing little organic matter. In addition, the film surface can be smoothed. Furthermore, since the solvent in the paste is volatilized by discharging the Ag paste under reduced pressure, the subsequent heat treatment can be omitted or the heat treatment time can be shortened.

  Note that the source electrode and the drain electrode 314 may be formed by forming a conductive film in advance by a sputtering method or the like, forming a mask by a process as shown in the second embodiment, and then etching. This mask can also be formed using the materials described above.

    Next, as illustrated in FIG. 3C, the second semiconductor region is etched using the source and drain electrodes 314 as a mask to expose the first semiconductor region 312. Here, the second semiconductor region divided by etching is referred to as a third semiconductor region 321.

    Note that in the case where an organic semiconductor is used for the first semiconductor region 312, an organic conductive material such as polyacetylene, polyaniline, PEDOT (poly-ethylene thiophene), or PSS (poly-styrene sulfonate) is used instead of the third semiconductor region 321. A conductive layer formed by the step can be formed. The conductive layer functions as a contact layer or a source electrode and a drain electrode.

    Further, a conductive layer formed using a metal element can be used instead of the third semiconductor region 321. In this case, since a material that transports charges in many organic semiconductor materials is a p-type semiconductor that transports holes as carriers, it is desirable to use a metal having a high work function in order to make ohmic contact with the semiconductor layer.

    Specifically, metals or alloys such as gold, platinum, chromium, palladium, aluminum, indium, molybdenum, and nickel are desirable. It can form by the method of the above-mentioned Embodiment 1 or 2 using the electrically conductive paste using these metals or alloy materials.

    Furthermore, a first semiconductor region formed of an organic semiconductor material, a conductive layer formed of an organic conductive material, and a conductive layer formed of a metal element may be stacked.

    Next, a passivation film 323 is preferably formed over the source and drain electrodes 314. The passivation film is formed using a thin film formation method such as plasma CVD or sputtering, and silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, aluminum oxynitride, or aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon (CN) and other insulating materials can be used.

    Next, a contact hole is formed in the passivation film, and then a wiring or a pixel electrode 331 that is electrically connected to the source electrode and the drain electrode is formed.

    The contact hole can be formed by forming a mask in the region other than the portion where the contact hole is formed on the passivation film by the method shown in Embodiment 2, and etching the passivation film using the mask. Is possible.

    Next, a conductive film 331 connected to each of the source electrode and the drain electrode is formed. Here, a conductive film is formed by discharging a paste in which a conductive material is dissolved or dispersed in a solvent by the method described in the first embodiment. As a conductive material of the conductive film, a material similar to that of the source electrode and the drain electrode can be used. Note that the conductive film 331 functions as a connection wiring or a pixel electrode.

    Through the above process, a channel-etch TFT can be manufactured. In the present embodiment, a method for manufacturing a channel etch type TFT has been described. However, it is obvious that the present invention is not limited to this type of TFT. That is, a channel protection type TFT can be formed using the present invention.

    In the case of the channel protection type, after forming the first semiconductor film, an insulating film for channel protection is formed. At this time, the insulating film can be formed by the method used in forming the gate electrode. That is, a first film is formed over the first semiconductor film, and a mask containing the mask material is discharged thereon to form a mask.

    After that, by using the mask, the unmasked portion of the first film is removed, and a low wettability region and a high wettability region are formed over the first semiconductor film. In this case, the highly paintable region is a region where an insulating film for protecting the channel is formed. A solution containing an insulating film material is discharged by a droplet discharge method to a highly wettable area sandwiched between low wettable areas.

    Next, baking is performed to form an insulating film for protecting the channel. As the material for forming the first film, the material for forming the mask and its solvent, the insulating film for protecting the channel, etc., those described above or those shown in the first embodiment and the second embodiment can be used.

    After that, a second semiconductor film is formed, and the first semiconductor film and the second semiconductor film are patterned into desired shapes by the above-described method. A source / drain electrode can be formed by the above-described method, and the second semiconductor film can be etched using the source / drain electrode as a mask.

(Fourth embodiment)
In this embodiment, a manufacturing process of a TFT having a top gate coplanar structure will be described with reference to FIGS.

    As shown in FIG. 4A, a first insulating film 402 is formed over the substrate 101. The first insulating film is for preventing impurities from the substrate 101 from entering a TFT to be formed later. A film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used as a PVD. The film is formed by a known method such as a method or a CVD method. Note that in the case where the substrate 101 is formed using a material that does not allow impurities to enter the TFT, typically, quartz or the like, the first insulating film 402 is not necessarily formed.

    Next, a semiconductor film 403 is formed over the first insulating film 402. As the semiconductor film 403, the first semiconductor film 303 shown in the third embodiment is formed into a desired shape by the method shown in the first embodiment or the second embodiment.

    Next, a solution 404 having 13 or 15 group impurities on the portions to be the source region and the drain region of the semiconductor film 403 is ejected by the droplet ejection method using the method of the first embodiment, and then laser light is emitted. 405 is irradiated. Through this step, conductive semiconductor regions (a source region and a drain region) 411 can be formed as illustrated in FIG. For this reason, the solution containing impurities belonging to Group 13 or Group 15 is discharged onto a semiconductor region to be a later source region and drain region. In the case where the semiconductor film 403 is an amorphous silicon film or the like, a portion corresponding to a so-called channel region may be crystallized.

    Next, as illustrated in FIG. 4B, an island-shaped first film 412 is formed over the source and drain regions 411. Since the first film 412 is for preventing formation of a gate insulating film and an interlayer insulating film to be formed later, the first film 412 is discharged to a region where a later contact hole and connection wiring are formed. For the first film 412, a material and a formation method similar to those of the first film described in the first embodiment, the second embodiment, or the third embodiment can be used as appropriate. That is, a first film is formed over the entire surface, and then a mask is formed in a region where the contact hole and the connection wiring are formed, and the first film in a region not covered with the mask is removed. As a result, the portion remaining without being removed becomes the first film 412. The mask over the first film 412 is removed.

    Next, a highly wettable material such as organic SOG such as siloxane polymer and polysilazane, inorganic SOG, or the like is formed by a droplet discharge method or a coating method, and drying and baking are performed to form the gate insulating film 413. Note that organic SOG, inorganic SOG, and the like are repelled by the first film and formed in a region sandwiched between the first films 412.

    Next, a gate electrode 421 is formed over the semiconductor film 403 between the source region and the drain region 411 and over the gate insulating film 413. For the gate electrode 421, a material and a manufacturing method similar to those of the gate electrode 301 described in the third embodiment are appropriately used.

    Next, a solution containing an insulating material is applied to form an interlayer insulating film 323. Since the region where the first film 412 is provided has low wettability, the solution containing the insulating material is repelled. Therefore, the interlayer insulating film 323 can be selectively formed in a region sandwiched between the first films 412.

    Next, the first film is removed (FIG. 4C). Next, a conductive film 331 is formed using the method described in the second embodiment (FIG. 4D).

    Through the above steps, a TFT having a top gate coplanar structure can be formed.

(Fifth embodiment)
In the present embodiment, a droplet discharge device that can be used for pattern formation in the above embodiment will be described. In FIG. 16, a region where one panel 1930 is formed on the substrate 1900 is indicated by a dotted line.

    FIG. 16 shows one mode of a droplet discharge device used for forming a pattern such as a wiring. The droplet discharge means 1905 has a head, and the head has a plurality of nozzles. In this embodiment, a case where three heads (1903a, 1903b, and 1903c) having ten nozzles are described will be described. However, the number of nozzles and the number of heads are set according to a processing area, a process, and the like. Can do.

    The head is connected to the control means 1907, and the control means controls the computer 1910 to draw a preset pattern. The drawing timing may be performed using, for example, the marker 1911 formed on the substrate 1900 fixed on the stage 1931 as a reference point. Further, the edge of the substrate 1900 may be used as a reference point. These reference points are detected by an imaging means 1904 such as a CCD, and converted into a digital signal by an image processing means 1909. The computer 1910 recognizes the digitally changed signal, generates a control signal, and sends it to the control means 1907. When drawing a pattern in this way, the distance between the pattern forming surface and the tip of the nozzle is 0.1 cm to 5 cm, preferably 0.1 cm to 2 cm, and more preferably about 0.1 cm. By shortening the interval in this way, droplet landing accuracy is improved.

    At this time, information on the pattern formed on the substrate 1900 is stored in the storage medium 1908. Based on this information, a control signal is sent to the control means 1907, and each head 1903a, 1903b, 1903c is individually controlled. be able to. That is, droplets having different materials can be discharged from the nozzles of the heads 1903a, 1903b, and 1903c. For example, the nozzles of the heads 1903a and 1903b can discharge droplets having an insulating film material, and the nozzles of the head 1903c can discharge droplets having a conductive film material.

    Furthermore, each nozzle of the head can be individually controlled. Since the nozzles can be individually controlled, droplets having different materials can be discharged from a specific nozzle. For example, the same head 1903a can be provided with a nozzle for discharging a droplet having a conductive film material and a nozzle for discharging a droplet having an insulating film material.

    In the case where a droplet discharge process is performed on a large area as in the step of forming an interlayer insulating film, droplets having an interlayer insulating film material may be discharged from all nozzles. Furthermore, it is preferable to discharge droplets having an interlayer insulating film material from all nozzles of a plurality of heads. As a result, throughput can be improved. Of course, in the interlayer insulating film forming step, a droplet having the interlayer insulating film material may be discharged from a single nozzle and a plurality of scans may be performed to perform a droplet discharging process on a large area.

    Then, the pattern can be formed on the large mother glass by zigzaging or reciprocating the head. At this time, the head and the substrate may be relatively scanned a plurality of times. When scanning the head with respect to the substrate, the head may be inclined obliquely with respect to the traveling direction.

    In the case where a plurality of panels are formed from a large mother glass, the width of the head is preferably about the same as the width of one panel. This is because a pattern can be formed in one scan with respect to a region where one panel 1930 is formed, and high throughput can be expected.

    Further, the width of the head may be smaller than the width of the panel. At this time, a plurality of small heads may be arranged in series so as to be approximately the same as the width of one panel. By arranging a plurality of small heads in series, it is possible to prevent the occurrence of head deflection, which is a concern as the head width increases. Of course, the pattern may be formed by scanning a narrow head a plurality of times.

    The step of discharging the solution droplets by such a droplet discharge method is preferably performed under reduced pressure. This is because the solvent of the solution evaporates before the solution is discharged and landed on the object to be processed, and the steps of drying and baking the solution can be omitted. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. The step of dropping the solution may be performed in a nitrogen atmosphere or an organic gas atmosphere.

    A piezo method can be used as a droplet discharge method. The piezo method is also used in inkjet printers because of its excellent droplet controllability and high degree of freedom in ink selection. There are two types of piezo systems: MLP (Multi Layer Piezo) type and MLChip (Multi Layer Ceramic Hyper Integrated Piezo Segments) type. Further, depending on the solvent of the solution, a droplet discharge method using a so-called thermal method in which the heating element generates heat to generate bubbles to push out the solution may be used.

    Next, a method for forming a silver wiring will be described with reference to FIGS.

    As shown in FIG. 5A, a silicon nitride film 502 is formed on the surface of the substrate 501. As the substrate 501, an AN100 glass substrate manufactured by Asahi Glass Co., Ltd. was used.

    Next, a heptadecafluorodecyltrimethoxysilane (GE Toshiba Silicone TSL8233) layer 503 was adsorbed onto the silicon nitride film 502 (hereinafter referred to as “first film” in this example). Here, a solution diluted with heptadecafluorodecyltrimethoxysilane was applied onto the silicon oxide film and adsorbed thereon.

    A first mask pattern 504 was formed on the first film 503. The first mask pattern is a droplet discharge method in which a polyimide solution (DL1602 (65 wt%) manufactured by Toray Industries, Inc.), heptadecafluorodecyltrimethoxysilane (5 wt%) and dipropylene glycol monomethyl ether (30 wt%) are mixed. To form a pattern having a line width of 60 μm. The distance between the first masks was 100 μm. Here, heptadecafluorodecyltrimethoxysilane was added as a surfactant. The surface tension at this time was 20.5 mN / m, and the static contact angle was 35 °. In order to remove the solvent and increase the viscosity of the polyimide, the substrate temperature was set to 60 ° C. (FIG. 6).

    As a result, the first film is exposed in a region where the first mask pattern 504 is not formed (FIG. 5A).

    Next, it was treated with a UV ozone cleaner for 10 minutes, and the first film 503 in the region where the first mask pattern was not formed was decomposed and removed. Thereafter, the first mask pattern 504 was peeled off with a peeling solution to form an island-shaped first film 510. Thus, a highly wettable region 506 (region where the first film is not formed) and a low wettability region 505 (region where the first film is formed) are formed in the substrate (FIG. 5 ( B)).

    A silver paste (made by Harima Kasei Co., Ltd.) was discharged onto a region 506 sandwiched between the island-shaped first films by a droplet discharge method. The static contact angle for the first membrane was 55 °. Thereafter, it was baked at 230 ° C. in an oven. As a result, a silver wiring 507 having a line width of 100 μm was formed (FIGS. 5C and 7). The island-like first film was then removed by UV ozone cleaner treatment (FIG. 5D).

    Here, a first film is formed, and a first mask pattern is formed using a solution in which a surfactant is added to reduce the contact angle, and the first film is patterned to have low paintability. A region (a region where the first film is formed) and a high region (a region where the first film is not formed) were formed. Thereafter, a solution (here, silver paste) having a high contact angle with respect to the first film was discharged into a highly paintable region. By this method, a thin line pattern could be easily formed without going through a so-called photolithography process and without damaging the substrate.

    Next, a method for patterning the transparent electrode will be described.

    As shown in FIG. 2A, a heptadecafluorodecyltrimethoxysilane (GE Toshiba Silicone XC98-A5382) film is formed on a substrate 101 on which a transparent electrode (ITO, ITO containing silicon oxide, IZO, etc.) 201 is formed. 102 was adsorbed (hereinafter referred to as “first film” in this example). Here, a solution diluted with heptadecafluorodecyltrimethoxysilane was applied onto a transparent electrode and adsorbed thereon.

    A first mask pattern 103 was formed on the first film 102. The first mask pattern is polyvinyl alcohol (manufactured by Kuraray, LM25SO (10 wt%)) using methyl ethyl ketone and dipropylene glycol monomethyl ether (methyl ethyl ketone: dipropylene glycol monomethyl ether = 1: 1) as a solvent, and heptadecafluoro as a surfactant. A mixture of decyltrimethoxysilane (XC98-A5382 (1 wt%)) was discharged by a droplet discharge method. As a result, a pattern having a line width of 60 μm was formed. The interval was 500 μm. The surface tension at this time was 18 mN / m, and the static contact angle with respect to the first film was 36 °. The substrate temperature was set to 50 ° C. during discharge.

    As a result, the first film is exposed in the region where the first mask pattern is not formed (FIGS. 2A and 8).

    Next, it was treated with a UV ozone cleaner for 10 minutes to decompose and remove the first film 102 in the region where the first mask pattern was not formed. Thereafter, the first mask pattern was peeled off with an ethanol solution to form an island-shaped first film 210. As a result, a region 105 with high wettability (region where the first film is not formed) and a region 104 with low wettability (region where the first film is formed) are formed in the substrate (FIG. 2 ( B)).

    Thereafter, a second mask pattern 202 was formed on the region 105 where the first film was not formed (FIG. 2C). The second mask pattern 202 is obtained by discharging a polyimide solution (Toray DL1602, solvent: butyrolactone: ethyl lactate = 1: 1) onto the entire surface of the substrate on which the island-shaped first film is formed by a droplet discharge method. Formed. Since the highly wettable area 105 and the low wettable area 104 are formed in the substrate, the polyimide solution was applied to the highly wettable area 105. The surface tension for the first membrane was 31 mN / m and the static contact angle for the first membrane was 68 °. The substrate was not heated when the polyimide solution was applied (FIG. 9). This may be followed by a firing step.

    As shown in FIG. 2D, using the second mask pattern 202, the island-shaped first film and the transparent electrode therebelow were etched and patterned. As a result, a transparent electrode pattern having an interval of 500 μm and an interval of 60 μm between adjacent transparent electrodes could be formed. Thereafter, the second mask pattern was removed (FIG. 2E).

    Here, a first film is formed on a transparent electrode, a first mask pattern is formed on the first film using a solution in which a surfactant is added to lower the contact angle, and the first film is patterned. A region with low wettability and a region with high wettability were formed. Thereafter, a solution having a high contact angle with respect to the first film (here, a polyimide solution) was discharged to a highly paintable region to form a second mask, and the transparent electrode was etched using this mask. By this method, the transparent electrode could be easily patterned without going through a so-called photolithography process and without damaging the substrate.

    Next, a method for patterning the insulating film will be described.

    As shown in FIG. 2A, an octadecyltrimethoxysilane film 102 is adsorbed on a substrate 101 on which a silicon oxide film 201 is formed (hereinafter referred to as “first film” in this embodiment). Here, a solution obtained by diluting the octadecyltrimethoxysilane film is applied onto the silicon oxide film and adsorbed thereon.

    A first mask pattern 103 is formed on the first film 102. The first mask pattern is a droplet discharge method in which a polyimide solution (Toray, DL1602 (65 wt%)), heptadecafluorodecyltrimethoxysilane (5 wt%) and dipropylene glycol monomethyl ether (30 wt%) are mixed. To form a pattern with a line width of 10 μm. Here, heptadecafluorodecyltrimethoxysilane was added as a surfactant.

    As a result, the first film is exposed in the region where the first mask pattern is not formed.

    Next, the substrate is treated with a UV ozone cleaner for 10 minutes to decompose and remove the first film 102 in the region where the first mask pattern is not formed. Thereafter, the first mask pattern is peeled off to form an island-shaped first film 210. As a result, a region 105 having high wettability (a region where the first film is not formed) and a region 104 having low wettability (a region where the first film is formed) are formed in the substrate.

    After that, a second mask pattern was formed on the region 105 where the island-shaped first film was not formed. The second mask pattern 202 discharges a polyimide solution onto the entire surface of the substrate on which the first film 210 is formed by a droplet discharge method. Since the highly wettable area 105 and the low wettable area 104 are formed in the substrate, the polyimide solution is applied to the highly wettable area. Next, the polyimide can be fired.

    Using the second mask pattern 202, the first film 210 and the underlying silicon oxide film 201 are etched and patterned (FIGS. 2D and 2E).

    Next, an embodiment in which an inverted stagger type TFT is formed will be described with reference to FIG.

    A heptadecafluorodecyltrimethoxysilane (GE Toshiba Silicone XC98-A5382) film 1003 is applied and adsorbed on a glass substrate 1001 on which a silicon oxide film 1002 is formed (hereinafter referred to as “first film” in this embodiment). Called).

    A first mask pattern 1004 is formed on the first film 1003. The first mask pattern is a droplet discharge method in which a polyimide solution (DL1602 (65 wt%) manufactured by Toray Industries, Inc.), heptadecafluorodecyltrimethoxysilane (5 wt%) and dipropylene glycol monomethyl ether (30 wt%) are mixed. To form a pattern having a line width of 10 μm. Here, heptadecafluorodecyltrimethoxysilane is added as a surfactant.

    As a result, the first film is exposed in the region where the first mask pattern is not formed (FIG. 10A).

    Next, the substrate is treated with a UV ozone cleaner for 5 to 15 minutes to decompose and remove the first film 1003 in the region where the first mask pattern is not formed. After that, the first mask pattern is peeled off with a peeling solution to form an island-shaped first film 1010. Thus, a highly wettable region 1006 (a region where the first film is not formed) and a low wettability region 1005 (a region where the first film is formed) are formed in the substrate (FIG. 10 ( B)).

    A solution in which silver fine particles are dispersed in a solvent is discharged to a region 1006 sandwiched between the first films by a droplet discharge method. Thereafter, it is baked at 200 to 250 ° C. in an oven. Thus, a gate electrode 1007 having a line width of 10 μm can be formed (FIG. 10C). The island-shaped first film 1010 is then removed by treatment with a UV ozone cleaner (FIG. 10D).

    Next, a gate insulating film 1008 is formed over the gate electrode 1007. As the gate insulating film 1008, a plasma CVD method is used to form a stacked film of a silicon nitride oxide film and a silicon oxynitride film. A stacked structure of a silicon nitride oxide film and a silicon oxynitride film is formed from the side in contact with the gate electrode layer. The film thickness is 50 to 100 nm.

    Next, an amorphous silicon film 1009 is formed over the gate insulating film 1008 by plasma CVD. The film thickness is 100 to 200 nm.

    Next, an acetic acid solution containing nickel is applied and held on the amorphous semiconductor film by a spin coating method, and the amorphous semiconductor film is dehydrogenated (500 ° C., 1 hour), and then subjected to thermal crystallization. (550 ° C., 4 hours) to form a crystalline silicon film 1011. Thereafter, laser light 1050 having a pulse emission type and a frequency of MHz is irradiated to further enhance crystallinity (FIG. 11A).

    Next, a second amorphous silicon film 1012 is formed by a plasma CVD method in which a gas containing a phosphorus element is added to a silicide gas.

    After the second amorphous silicon film 1012 is formed, heat treatment is performed again at 550 ° C. As a result, nickel contained in the crystalline silicon film 1011 is gettered to the second amorphous silicon film 1012. Note that the second amorphous silicon film may also be crystallized by this heat treatment to become a second crystalline silicon film.

    Next, the second amorphous silicon film or the second crystalline silicon film 1012 and the crystalline silicon film 1011 are etched into an island shape. First, the first film 1013 is adsorbed on the second amorphous silicon film or the second crystalline silicon film 1012.

    Next, on the first film, polyvinyl alcohol is mixed with methyl ethyl ketone and dipropylene glycol monomethyl ether (methyl ethyl ketone: dipropylene glycol monomethyl ether = 1: 1) as a solvent, and heptadecafluorodecyltrimethoxysilane is mixed as a surfactant. Are discharged by a droplet discharge method to form a second mask 1014 (FIG. 11B).

    The first film 1013 is patterned using the second mask 1014 to form a low wettability region and a high wettability region on the second amorphous silicon or crystalline silicon film 1012. Thereafter, the second mask 1014 is removed.

    A third mask 1016 is formed by discharging a solution containing polyimide into a highly wettable region between the low wettability regions 1015 (FIG. 11C). This may be followed by a firing step.

    Using the third mask 1016, the patterned first film 1013 and the second amorphous silicon film or the crystalline silicon film 1012 and the crystalline silicon film 1011 are dry-etched into island shapes. The third mask 1016 is removed after this etching (FIG. 11D).

    Next, a source electrode and a drain electrode are formed over the second amorphous silicon film or the crystalline silicon film 1012. Here, a Ti film, an Al film, and a Ti film are formed as the conductive film 1017 by sputtering (FIG. 12A).

    Next, the first film 1018 is adsorbed on the outermost Ti film (FIG. 12B). Liquid obtained by mixing polyvinyl alcohol with methyl ethyl ketone and dipropylene glycol monomethyl ether (methyl ethyl ketone: dipropylene glycol monomethyl ether = 1: 1) as a solvent and heptadecafluorodecyltrimethoxysilane as a surfactant on the first film. A fourth mask (not shown) is formed by discharging with a droplet discharge method.

    Using the fourth mask, the first film is patterned to form a low wettability region and a high wettability region on the Ti film. Thereafter, the fourth mask is removed.

    A fifth mask is formed (not shown) by discharging a solution containing polyimide into a highly wettable region sandwiched between low wettability regions.

    Using the fifth mask, the patterned first film, Ti film, Al film, and Ti film are dry-etched to form the source and drain electrodes 1021. The fifth mask is removed after this etching (FIG. 12C).

    Next, the second amorphous silicon film or the crystalline silicon film 1012 is etched using the source and drain electrodes 1021 as a mask to expose the crystalline silicon film 1022. At this time, part of the surface of the crystalline silicon film is also etched.

    Next, a passivation film 1023 is formed over the source and drain electrodes 1021 (FIG. 12D).

    Next, the first film 1024 is adsorbed. Liquid obtained by mixing polyvinyl alcohol with methyl ethyl ketone and dipropylene glycol monomethyl ether (methyl ethyl ketone: dipropylene glycol monomethyl ether = 1: 1) as a solvent and heptadecafluorodecyltrimethoxysilane as a surfactant on the first film. A sixth mask 1025 is formed by discharging with a droplet discharge method (FIG. 12E).

    Next, the portion of the first film where the sixth mask is not formed is removed. A contact hole is formed later in the portion where the sixth mask is formed. Thereafter, the sixth mask is removed (not shown).

The region where the first film 1024 is formed is a region with low wettability, and the other regions are regions with high wettability. Next, when a solution containing an interlayer insulating film is discharged, the interlayer insulating film 1026 is formed in a region with high wettability and is not formed in a region with low wettability where the first film is formed (FIG. 13A). ). Thereafter, the first film 1024 is removed. Subsequently, the passivation film 1023 is removed to expose part of the source or drain electrode (FIG. 13B).
Next, a pixel electrode 1027 is formed by a sputtering method or the like (FIG. 13C).

    Next, the first film is adsorbed on the pixel electrode 1027. Liquid obtained by mixing polyvinyl alcohol with methyl ethyl ketone and dipropylene glycol monomethyl ether (methyl ethyl ketone: dipropylene glycol monomethyl ether = 1: 1) as a solvent and heptadecafluorodecyltrimethoxysilane as a surfactant on the first film. A seventh mask is formed by discharging with a droplet discharge method (not shown).

    Using the seventh mask, the first film is patterned to form a low wettability region and a high wettability region on the pixel electrode. Thereafter, the seventh mask is removed (not shown).

    An eighth mask is formed by discharging a solution containing polyimide into a highly wettable region sandwiched between low wettability regions (not shown).

    The patterned first film and the pixel electrode are etched using the eighth mask. The eighth mask is removed after this etching. Through the above steps, a channel etch type TFT can be manufactured (not shown).

    In this embodiment, an example in which an active matrix device is manufactured using the TFT manufacturing method shown in Embodiment 4 will be described. Here, a liquid crystal display panel will be described as a display panel.

    FIG. 14 schematically shows a longitudinal sectional structure of the pixel portion 1420 and the connection terminal portion 1421. It goes without saying that the TFT can be manufactured by the method shown in Embodiment 4 and the auxiliary capacitor can be manufactured simultaneously with the TFT by using the method shown in Embodiment 4.

    Reference numeral 1401 denotes a substrate, and 1412 denotes a counter substrate. 1403 is a gate electrode or gate wiring, 1404 is a gate insulating film, 1405 is a semiconductor film, 1406 is an n-type or p-type semiconductor film, and 1407 is a source electrode, drain electrode or source line. Reference numerals 1408 and 1409 denote passivation films, interlayer insulating films, 1410 a pixel electrode, 1411 an alignment film, 1414 a connection terminal, 1415 an anisotropic conductive film, and 1416 a liquid crystal material.

    The pixel electrode 1410 may be formed using a composition containing indium tin oxide, zinc oxide, tin oxide, or the like. In the case of manufacturing a reflective liquid crystal display panel, a composition containing metal particles such as silver, gold, copper, tungsten, and aluminum as a main component can be used.

    The alignment film 1411 is formed by forming an insulating film and performing rubbing by a printing method or a spin coating method. It can also be formed by oblique deposition.

    A sealing material is formed around the substrate by a droplet discharge method, a dispenser method, a printing method, or the like (not shown).

    The liquid crystal material 1416 is dropped by a dispenser type (dropping type) inside the closed loop formed of the sealing material.

    As the liquid crystal material, nematic liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, or the like can be used. As the liquid crystal mode, modes such as OCB and MVA can be used.

    Each of the gate wiring layer 1403 and the source wiring layer (not shown) has a connection terminal (a connection terminal 1414 connected to the gate wiring layer and a connection terminal connected to the source wiring layer) through an anisotropic conductive layer 1415. Z.) is pasted.

    Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, the TFT can be manufactured in the same process as the above TFT, and can be operated as a diode by connecting the gate wiring layer of the pixel portion and the drain or source wiring layer of the diode.

    Note that any of the first to fifth embodiments can be applied to this example. In this embodiment, a method for manufacturing a liquid crystal display panel as a display panel is described. However, the present invention is not limited to this, and a light-emitting display device having a light-emitting substance formed of an organic material or an inorganic material as a light-emitting layer (Digital Micromirror Device), PDP (Plasma Display Panel), FED (Field Emission Display), electrophoretic display device (electronic paper) and other active display panels as appropriate be able to.

    In this embodiment, a display panel using a passive matrix substrate will be described with reference to FIGS. In this embodiment, an EL display panel (light-emitting display panel) will be described as a display panel.

    As shown in FIG. 17A, a first pixel electrode 1702 formed using a light-transmitting conductive film is formed over a light-transmitting substrate 1701.

First, a first film is formed over the substrate 1701. Next, a mask is formed by discharging a solution containing a mask material onto the first film by a droplet discharge method. Using this mask, the first film is subjected to UV ozone treatment to remove the unmasked portion of the first film. Thereby, a low wettability region and a high wettability region can be formed on the substrate. Next, a solution containing ITO, ZnO, and SiO ₂ as a composition is discharged to a highly paintable region by a droplet discharge method, and baked to form a first pixel electrode. The first pixel electrode is formed by drawing while drawing in parallel (not shown).

Next, a plurality of first insulating films 1703 orthogonal to the first electrode are formed at regular intervals on the first pixel electrode 1702. As the first insulating film, an insulating film such as SiO ₂ or SiN is formed and etched in parallel. Here, it can be formed by the method shown in Embodiment Mode 2.

    Next, as illustrated in FIG. 17B, a mask pattern 1711 is formed in a region where an organic EL material layer is to be formed later, that is, a region between adjacent first insulating films 1703. First, a first film is formed over the entire surface, and a mask is formed thereon by discharging a solution containing a mask material by a droplet discharge method. Then, the first film is patterned by UV ozone treatment using this mask. The mask on the first film is removed to form a mask pattern made of the first film.

    Next, a second insulating film 1712 is formed by discharging a solution containing an insulating film material to a region where the mask pattern is not formed, that is, an outer edge of the mask pattern, and drying and baking. In this embodiment, polyimide is discharged.

    Note that a second insulating film 1712 having a reverse tapered cross section as illustrated in FIG. 17B can be formed by the composition, viscosity, surface tension, or the like of the solution.

    Further, as shown in FIG. 18, the second insulating film 1731 having a forward tapered shape can be formed by the composition, viscosity, surface tension, and the like of the solution.

    Next, as shown in FIG. 17C, the mask pattern 1711 is removed by ashing using oxygen. Next, an organic EL material is deposited, that is, an organic EL material layer 1721 is formed in a region between the adjacent first insulating films 1703. In this step, an organic EL material 1722 is also deposited on the second insulating film 1712.

    Next, as illustrated in FIG. 17D, a conductive material is evaporated to form a second pixel electrode 1723. Note that in this step, a second conductive material 1724 is deposited on the organic EL material 1722 formed over the second insulating film 1712. In this embodiment, the second pixel electrode is made of Al, Al—Li alloy, Ag—Mg alloy or the like.

Note that in the case where the cross section of the second insulating film 1712 has an inversely tapered shape, the organic EL material layer 1721 and the second pixel electrode 1723 are prevented from being deposited by the head portion of the second insulating film 1712.
Therefore, the second insulating film 1712 can be divided without using a known photolithography process.

    In the case where the second insulating film 1731 has a forward tapered shape, an organic EL material and a conductive material are provided between the second insulating films 1731 by a droplet discharge method as illustrated in FIG. The organic EL material 1732 and the second pixel electrode 1733 can be formed by discharging each solution.

    Thereafter, a protective film can be formed to produce an organic EL display panel.

    Note that any of the first to fifth embodiments can be applied to this example. In this embodiment, a method for manufacturing an organic EL display panel as a display panel has been described. However, the present invention is not limited to this, and a liquid crystal display device, a DMD (Digital Micromirror Device), a PDP (Plasma Display) is used. It can be suitably applied to passive display panels such as a panel (plasma display panel), an FED (field emission display), and an electrophoretic display device (electronic paper).

    According to this embodiment, an organic EL display device can be formed without using known photolithography.

    In this embodiment, mounting of a driver circuit (a signal line driver circuit 1502 and scan line driver circuits 1503a and 1503b) on the display panel described in the above embodiment will be described with reference to FIG.

    As shown in FIG. 19A, a signal line driver circuit 1502 and scan line driver circuits 1503a and 1503b are mounted around the pixel portion 1501. In FIG. 19A, an IC chip 1505 is mounted over a substrate 1500 by a COG method as the signal line driver circuit 1502, the scanning line driver circuits 1503a and 1503b, and the like. Then, an IC chip and an external circuit are connected via an FPC (flexible printed circuit) 1506.

    As shown in FIG. 19B, when a TFT is formed using a SAS or a crystalline semiconductor, the pixel portion 1501, the scanning line driver circuits 1503a and 1503b, and the like are integrally formed over the substrate, and the signal line driver circuit 1502 and the like are formed. May be separately mounted as an IC chip. In FIG. 19B, as the signal line driver circuit 1502, an IC chip 1505 is mounted on a substrate 1500 by a COG method. Then, the IC chip and an external circuit are connected via the FPC 1506.

    Further, as shown in FIG. 19C, a signal line driver circuit 1502 or the like may be mounted by a TAB method instead of the COG method. Then, the IC chip and an external circuit are connected via the FPC 1506. In FIG. 19C, the signal line driver circuit is mounted by the TAB method, but the scan line driver circuit may be mounted by the TAB method.

When the IC chip is mounted by the TAB method, a pixel portion can be provided larger than the substrate, and a narrow frame can be achieved.

    The IC chip is formed using a silicon wafer, but an IC (hereinafter referred to as a driver IC) in which an IC is formed on a glass substrate may be provided instead of the IC chip. Since an IC chip is taken out from a circular silicon wafer, the shape of the base substrate is limited. On the other hand, the driver IC has a mother substrate made of glass and has no restriction in shape, so that productivity can be improved. Therefore, the shape of the driver IC can be set freely. For example, when the length of the long side of the driver IC is 15 to 80 mm, the required number can be reduced as compared with the case where the IC chip is mounted. As a result, the number of connection terminals can be reduced, and the manufacturing yield can be improved.

    The driver IC can be formed using a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiation with continuous wave laser light. A semiconductor film obtained by irradiation with continuous wave laser light has few crystal defects and large crystal grains. As a result, a transistor having such a semiconductor film has favorable mobility and response speed, can be driven at high speed, and is suitable for a driver IC.

    In this embodiment, a mounting method of the driver circuit (the signal line driver circuit 1502 and the scan line driver circuits 1503a and 1503b) on the display panel described in the above embodiment is described with reference to FIGS. As this mounting method, a connection method using an anisotropic conductive material, a wire bonding method, or the like may be adopted, and an example thereof will be described with reference to FIG. Note that in this embodiment, an example in which a driver IC is used for the signal line driver circuit 1502 and the scanning line driver circuits 1503a and 1503b is shown. An IC chip can be appropriately used instead of the driver IC.

    FIG. 20A shows an example in which a driver IC 2003 is mounted on an active matrix substrate 2001 using an anisotropic conductive material. On the active matrix substrate 2001, each wiring (not shown) such as a source wiring or a gate wiring and electrode pads 2002a and 2002b which are extraction electrodes of the wiring are formed.

    Connection terminals 2004a and 2004b are provided on the surface of the driver IC 2003, and a protective insulating film 2005 is formed in the periphery thereof.

    A driver IC 2003 is fixed on the active matrix substrate 2001 with an anisotropic conductive adhesive 2006, and the connection terminals 2004a and 2004b and the electrode pads 2002a and 2002b are electrically conductive in the anisotropic conductive adhesive, respectively. The particles 2007 are electrically connected. An anisotropic conductive adhesive is an adhesive resin in which conductive particles (particle size of about 3 to 7 μm) are dispersed and contained, and examples thereof include an epoxy resin and a phenol resin. In addition, the conductive particles are formed of one element selected from gold, silver, copper, palladium, or platinum, or alloy particles of a plurality of elements. Moreover, the particle | grains which have the multilayer structure of these elements may be sufficient. Furthermore, the particle | grains by which the resin particle was coated with one element selected from gold, silver, copper, palladium, or platinum, or an alloy of a plurality of elements may be used.

    Moreover, you may transfer and use the anisotropic conductive film formed in the film form on the base film instead of an anisotropic conductive adhesive. In the anisotropic conductive film, conductive particles similar to the anisotropic conductive adhesive are dispersed. By making the size and density of the conductive particles 2007 mixed in the anisotropic conductive adhesive 2006 suitable, the driver IC can be mounted on the active matrix substrate in such a form. This mounting method is suitable for the mounting method of the driver IC shown in FIGS. 19 (A) and 19 (B).

    FIG. 20B shows an example of a mounting method using the shrinkage force of an organic resin. Buffer layers 2011a and 2011b are formed of Ta or Ti on the connection terminal surface of a driver IC, and an electroless plating method or the like is formed thereon. As a result, Au is formed to about 20 μm to form bumps 2012a and 2012b. The photo-curable insulating resin 2013 is interposed between the driver IC and the active matrix substrate, and the electrodes can be mounted by pressure contact using the shrinkage force of the resin that is hardened by photo-curing. This mounting method is suitable for the mounting method of the driver IC shown in FIGS. 19 (A) and 19 (B).

    As shown in FIG. 20C, the driver IC 2003 is fixed to the active matrix substrate 2001 with an adhesive 2021, and the connection terminals of the driver IC and the electrode pads 2002a and 2002b on the wiring substrate are connected by wires 2022a and 2022b. You may connect. Then, it is sealed with an organic resin 2023. This mounting method is suitable for the mounting method of the driver IC shown in FIGS. 19 (A) and 19 (B).

    In addition, as illustrated in FIG. 20D, a driver IC 2003 may be provided through a wiring 2032 over an FPC (Flexible Printed Circuit) 2031 and an anisotropic conductive adhesive 2006 containing conductive particles 2008. This configuration is very effective when used for an electronic device with a limited housing size such as a portable terminal. This mounting method is suitable for the mounting method of the driver IC of FIG.

    The method for mounting the driver IC is not particularly limited, and a known COG method, wire bonding method, TAB method, or reflow processing using solder bumps can be used. When performing reflow processing, the substrate used for the driver IC or active matrix substrate is a plastic with high heat resistance, typically a polyimide substrate, an HT substrate (manufactured by Nippon Steel Chemical Co., Ltd.), norbornene with a polar group. It is preferable to use ARTON made of resin (manufactured by JSR) or the like.

    In this embodiment, a display module will be described. Here, a liquid crystal module is shown as an example of a display module with reference to FIG.

    In the liquid crystal module illustrated in FIG. 21, an active matrix substrate 1601 and a counter substrate 1602 are fixed with a sealing material 1600, and a pixel portion 1603 and a liquid crystal layer 1604 are provided therebetween to form a display region. .

    The colored layer 1605 is necessary when performing color display. In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. Polarizers 1606 and 1607 are disposed outside the active matrix substrate 1601 and the counter substrate 1602. In addition, a protective film 1616 is formed on the surface of the polarizing plate 1606 to reduce external impact.

    A wiring board 1610 is connected to a connection terminal 1608 provided on the active matrix substrate 1601 through an FPC 1609. A pixel driving circuit (IC chip, driver IC, or the like) 1611 is provided in the FPC or connection wiring, and an external circuit 1612 such as a control circuit or a power supply circuit is incorporated in the wiring substrate 1610.

    The cold cathode tube 1613, the reflecting plate 1614, and the optical film 1615 are backlight units, which serve as light sources and project light onto the liquid crystal display panel. A liquid crystal panel, a light source, a wiring board, an FPC, and the like are held and protected by a bezel 1617.

    In this embodiment, as an example of a display module, the appearance of a light-emitting display module will be described with reference to FIG. 22A is a top view of a panel in which a space between the first substrate and the second substrate is sealed with the first sealing material 1205 and the second sealing material 1206. FIG. FIG. 22B corresponds to a cross-sectional view taken along line AA ′ in FIG.

    In FIG. 22A, 1201 indicated by a dotted line is a signal line (source line) driver circuit, 1202 is a pixel portion, and 1203 is a scanning line (gate line) driver circuit. In this embodiment, the signal line driver circuit 1201, the pixel portion 1202, and the scanning line driver circuit 1203 are in a region sealed with a first sealing material and a second sealing material. As the first sealing material, it is preferable to use a highly viscous epoxy resin containing a filler. As the second sealing material, it is preferable to use an epoxy resin having a low viscosity. The first sealing material 1205 and the second sealing material are preferably materials that do not transmit moisture or oxygen as much as possible.

Further, a desiccant may be provided between the pixel portion 1202 and the sealing material 1205. Further, in the pixel portion, a desiccant may be provided on the scan line or the signal line. As the desiccant, it is preferable to use a substance that adsorbs water (H ₂ O) by chemical adsorption such as an oxide of an alkaline earth metal such as calcium oxide (CaO) or barium oxide (BaO). However, the present invention is not limited to this, and a substance that adsorbs water by physical adsorption such as zeolite or silica gel may be used.

    In addition, the first substrate can be fixed to the second substrate 1204 in a state where a highly moisture-permeable resin contains a granular material of a desiccant. Here, examples of the highly moisture-permeable resin include acrylic resins such as ester acrylate, ether acrylate, ester urethane acrylate, ether urethane acrylate, butadiene urethane acrylate, special urethane acrylate, epoxy acrylate, amino resin acrylate, and acrylic resin acrylate. Can be used. In addition, bisphenol A type liquid resin, bisphenol A type solid resin, bromine-containing epoxy resin, bisphenol F type resin, bisphenol AD type resin, phenol type resin, cresol type resin, novolac type resin, cyclic aliphatic epoxy resin, epibis type Epoxy resins such as epoxy resins, glycidyl ester resins, glycidylamine resins, heterocyclic epoxy resins, and modified epoxy resins can be used. Further, other substances may be used. Further, for example, inorganic substances such as siloxane polymer, polyimide, PSG (phosphorus glass), BPSG (phosphorus boron glass), and the like may be used.

  By providing the desiccant in a region that overlaps the scanning line, and fixing it to the second substrate in a state where the particulate material of the desiccant is included in a highly permeable resin, the aperture ratio is not reduced. In addition, it is possible to suppress the intrusion of moisture into the display element and the deterioration caused thereby.

    Note that reference numeral 1210 denotes a connection region for transmitting signals input to the signal line driver circuit 1201 and the scanning line driver circuit 1203, from an FPC (flexible printed wiring) 1209 serving as an external input terminal via a connection wiring 1208. Receive video and clock signals.

    Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the first substrate 1200, and includes a plurality of semiconductor elements typified by TFTs. A signal line driver circuit 1201 and a pixel portion 1202 are shown as driver circuits. Note that as the signal line driver circuit 1201, a CMOS circuit in which an n-channel TFT 1221 and a p-channel TFT 1222 are combined is formed.

    In this embodiment, a signal line driver circuit, a scanning line driver circuit, and a TFT of a pixel portion are formed on the same substrate. For this reason, the volume of the light emitting display device can be reduced.

    The pixel portion 1202 is formed of a plurality of pixels including a switching TFT 1211, a driving TFT 1212, and a first pixel electrode (anode) 1213 made of a reflective conductive film electrically connected to the drain thereof. .

    In addition, as an interlayer insulating film 1220 of these TFTs 1211, 1212, 1221, and 1222, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), an organic material (polyimide, polyamide, polyimideamide, benzocyclobutene, or siloxane) (Polymer) can be used. In addition, when a siloxane polymer is used as a raw material for the interlayer insulating film, an insulating film having a structure in which silicon and oxygen are included in a skeleton structure and hydrogen or / and an alkyl group is included in a side chain.

    In addition, insulators (called banks, partition walls, barriers, banks, or the like) 1214 are formed at both ends of the first pixel electrode (anode) 1213. In order to improve the coverage (coverage) of the film formed over the insulator 1214, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1214. As a material of the insulator 1214, a material mainly containing an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) or an organic material (such as polyimide, polyamide, polyimide amide, benzocyclobutene, or siloxane polymer) is used. Can be formed. Further, when a siloxane polymer is used as an insulating material, an insulating film having a structure in which silicon and oxygen are included in a skeleton structure and hydrogen or / and an alkyl group is included in a side chain. Alternatively, the insulator 1214 may be covered with an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a protective film (planarization layer) made of a silicon nitride film. In addition, as the insulator 1214, stray light from a light-emitting element to be formed later can be absorbed by using an organic material in which a material that absorbs visible light, such as a black pigment or a dye, is dissolved or dispersed. As a result, the contrast of each pixel is improved. Further, by providing the interlayer insulating film 1220 also with a light-shielding insulator, a total light-shielding effect with the insulator 1214 can be obtained.

    Further, an organic compound material is deposited on the first pixel electrode (anode) 1213 to selectively form a layer 1215 containing a light-emitting substance.

    A known structure can be used as appropriate for the layer 1215 containing a light-emitting substance. Here, a structure of a layer containing a light-emitting substance is shown with reference to FIG.

    FIG. 23A illustrates an example in which the first pixel electrode 11 is formed using a light-transmitting oxide conductive material. The first pixel electrode 11 is formed using an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%. Yes. A layer 16 containing a light emitting material in which a hole injection layer or hole transport layer 41, a light emitting layer 42, an electron transport layer or an electron injection layer 43 are stacked is provided thereon. The second pixel electrode 17 is formed of a first electrode layer 33 containing an alkali metal or alkaline earth metal such as LiF or MgAg and a second electrode layer 34 formed of a metal material such as aluminum. A pixel having this structure can emit light from the first pixel electrode 11 side as indicated by an arrow in the drawing.

    FIG. 23B shows an example in which light is emitted from the second pixel electrode 17, and the first pixel electrode 11 is made of a metal such as aluminum or titanium, or nitrogen at a concentration less than the stoichiometric composition ratio with the metal. And a second electrode layer 32 formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%. A layer 16 containing a light emitting material in which a hole injection layer or hole transport layer 41, a light emitting layer 42, an electron transport layer or an electron injection layer 43 are stacked is provided thereon. The second pixel electrode 17 is formed of a third electrode layer 33 containing an alkali metal or alkaline earth metal such as LiF or CaF and a fourth electrode layer 34 formed of a metal material such as aluminum. By setting the layer to a thickness of 100 nm or less and allowing light to pass therethrough, light can be emitted from the second pixel electrode 17.

    FIG. 23E illustrates an example in which light is emitted from both directions, that is, the first electrode and the second electrode. A conductive film having a light-transmitting property and a high work function is formed on the first pixel electrode 11. In addition, a conductive film having translucency and a small work function is used for the second pixel electrode 17. Typically, the first pixel electrode 11 is formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%, and the second pixel electrode 17 is formed of LiF having a thickness of 100 nm or less. Alternatively, the third electrode layer 33 containing an alkali metal or alkaline earth metal such as CaF or the like and the fourth electrode layer 34 formed of a metal material such as aluminum may be used.

    FIG. 23C shows an example in which light is emitted from the first pixel electrode 11, and a layer containing a light-emitting substance is an electron transport layer or electron injection layer 43, a light emitting layer 42, a hole injection layer or hole transport. A configuration in which the layers 41 are stacked in this order is shown. The second pixel electrode 17 includes a second electrode layer 32 formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic% from the side of the layer 16 containing a light emitting substance, a metal such as aluminum or titanium, Alternatively, the first electrode layer 35 is formed using a metal material containing nitrogen at a concentration equal to or less than the stoichiometric composition ratio to the metal. The first pixel electrode 11 is formed of a third electrode layer 33 containing an alkali metal or alkaline earth metal such as LiF or CaF and a fourth electrode layer 34 formed of a metal material such as aluminum. By setting the layer to a thickness of 100 nm or less and allowing light to pass therethrough, light can be emitted from the first pixel electrode 11.

    FIG. 23D shows an example in which light is emitted from the second pixel electrode 17, and a layer containing a light-emitting substance is formed as an electron transport layer or an electron injection layer 43, a light emitting layer 42, a hole injection layer or a hole transport. A configuration in which the layers 41 are stacked in this order is shown. The first pixel electrode 11 has a structure similar to that in FIG. 23C, and is formed to be thick enough to reflect light emitted from the layer containing a light-emitting substance. The second pixel electrode 17 is made of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%. In this structure, the hole injection layer 41 is formed of an inorganic metal oxide (typically molybdenum oxide or vanadium oxide), so that oxygen introduced when the second electrode layer 32 is formed is supplied. Thus, the hole injection property is improved, and the driving voltage can be lowered.

    FIG. 23F illustrates an example in which light is emitted from both directions, that is, the first pixel electrode and the second pixel electrode, and the first pixel electrode 11 has a light-transmitting property and has a small work function. A film is used, and a conductive film having translucency and a large work function is used for the second pixel electrode 17. Typically, the first pixel electrode 11 is formed of a third electrode layer 33 containing an alkali metal or alkaline earth metal such as LiF or CaF having a thickness of 100 nm or less and a metal material such as aluminum. And the second pixel electrode 17 may be formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%.

    Thus, as shown in FIG. 22B, a light-emitting element 1217 including a first pixel electrode (anode) 1213, a layer 1215 containing a light-emitting substance, and a second pixel electrode (cathode) 1216 is formed. The light-emitting element 1217 emits light toward the second substrate 1204 side.

    In addition, a protective stacked film 1218 is formed to seal the light emitting element 1217. The protective laminated film is composed of a laminated film of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film. Next, the protective laminate 1218 and the second substrate 1204 are bonded with the first sealant 1205 and the second sealant 1206. Note that the second sealing material is preferably dropped using a device for dropping a sealing material, such as a device for dropping liquid crystal. After the sealing material is dropped or discharged from the dispenser to apply the sealing material onto the active matrix substrate, the second substrate and the active matrix substrate are bonded together in a vacuum and then cured by ultraviolet curing. it can.

    Note that a polarizing plate 1225 is fixed to the surface of the second substrate 1204, and a 1 / 2λ or ¼λ phase difference plate 1229 and an antireflection film 1226 are provided on the surface of the polarizing plate 1225. Further, in order from the second substrate 1204, a quarter λ plate retardation plate, a ½ λ plate retardation plate 1229, and a polarizing plate 1225 may be sequentially provided. By providing the retardation plate and the polarizing plate, it is possible to prevent external light from being reflected by the pixel electrode. Note that the first pixel electrode 1213 and the second pixel electrode 1216 are formed using a light-transmitting or semi-transmitting conductive film, and the interlayer insulating film 1220 absorbs visible light or absorbs visible light. When an organic material formed by dissolving or dispersing the material is used, external light is not reflected by each pixel electrode. Therefore, a retardation plate and a polarizing plate may not be used.

    The connection wiring 1208 and the FPC 1209 are electrically connected by an anisotropic conductive film or an anisotropic conductive resin 1227. Furthermore, it is preferable that the connection portion between each wiring layer and the connection terminal is sealed with a sealing resin. With this structure, moisture from the cross section can be prevented from entering and deteriorating the light emitting element.

    Note that a space filled with an inert gas such as nitrogen gas may be provided between the second substrate 1204 and the protective stack 1218. It is possible to enhance prevention of moisture and oxygen from entering.

    A colored layer can be provided between the pixel portion 1202 and the polarizing plate 1225. In this case, a full color display can be performed by providing a light emitting element capable of emitting white light in the pixel portion and separately providing a colored layer showing RGB. Further, full color display can be performed by providing a light emitting element capable of emitting blue light in the pixel portion and separately providing a color conversion layer or the like. Furthermore, each pixel portion, a light emitting element that emits red, green, and blue light can be formed, and a colored layer can be used. Such a display module has high color purity of each RBG and enables high-definition display.

    Alternatively, the light-emitting display module may be formed using one of the first substrate 1200 and the second substrate 1204, or a substrate such as a film or resin. When sealing is performed without using the counter substrate in this manner, the weight, size, and thickness of the display device can be improved.

    Note that any of the first to fifth embodiments can be applied to this example. In the present embodiment, the light emitting display module is shown as the display module. However, the present invention is not limited to this, but the light emitting display device, DMD (Digital Micromirror Device), PDP (Plasma Display Panel), plasma display. Panel), FED (Field Emission Display; field emission display), electrophoretic display device (electronic paper), and other display modules.

    Various electronic devices can be manufactured by incorporating the display module shown in the above-described embodiment into a housing. Electronic devices include television devices, video cameras, digital cameras, goggle-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook personal computers, game machines, and portable information terminals (Mobile computer, mobile phone, portable game machine, electronic book, or the like), an image playback apparatus (specifically, a digital versatile disc (DVD)) provided with a recording medium, and can display the image And a device equipped with a display). Here, as representative examples of these electronic devices, a television device and its block diagram are shown in FIGS. 24 and 25, respectively, and a digital camera is shown in FIG.

    FIG. 24 is a diagram illustrating a general configuration of a television apparatus that receives an analog television broadcast. In FIG. 24, radio waves for television broadcasting received by the antenna 1101 are input to the tuner 1102. The tuner 1102 generates and outputs an intermediate frequency (IF) signal by mixing the high-frequency television signal input from the antenna 1101 with a signal having a local oscillation frequency controlled according to the desired reception frequency.

    The IF signal extracted by the tuner 1102 is amplified to a necessary voltage by an intermediate frequency amplifier (IF amplifier) 1103, and then detected by the image detection circuit 1104 and detected by the audio detection circuit 1105. The video signal output from the video detection circuit 1104 is separated into a luminance signal and a color signal by the video processing circuit 1106 and further subjected to predetermined video signal processing to become a video signal, which is the semiconductor device of the present invention. Liquid crystal display device, light emitting display device, DMD (Digital Micromirror Device), PDP (Plasma Display Panel), FED (Field Emission Display), electrophoretic display device (electronic paper) To the video output unit 1108.

    The signal output from the sound detection circuit 1105 is subjected to processing such as FM demodulation by the sound system processing circuit 1107 to become a sound signal, is appropriately amplified, and is output to the sound system output unit 1109 such as a speaker.

    Note that the television apparatus using the present invention is not limited to a terrestrial broadcast such as a VHF band or a UHF band, a cable broadcast, or an analog broadcast such as a BS broadcast, but also a terrestrial digital broadcast, a cable digital broadcast, Or it may correspond to BS digital broadcasting.

    FIG. 25 is a perspective view of the television device as viewed from the front, and includes a housing 1151, a display portion 1152, a speaker portion 1153, an operation portion 1154, a video input terminal 1155, and the like. Moreover, it has a structure as shown in FIG.

    The display unit 1152 is an example of the video system output unit 1108 of FIG. 24, and displays video here.

    The speaker unit 1153 is an example of the audio system output unit of FIG. 24, and outputs audio here.

    The operation unit 1154 is provided with a power switch, a volume switch, a channel selection switch, a tuner switch, a selection switch, and the like. By pressing the button, the power of the television apparatus is turned on / off, video selection, audio adjustment, And selecting a tuner. Although not shown, the above selection can also be performed by a remote controller type operation unit.

    The video input terminal 1155 is a terminal for inputting a video signal from the outside such as a VTR, a DVD, or a game machine to the television apparatus.

    In the case where the television device shown in this embodiment is a wall-mounted television device, a wall-hanging portion is provided on the back of the main body.

    By using the display device which is an example of the semiconductor device of the present invention for the display portion of the television device, the television device can be manufactured with low cost and high throughput and yield. In addition, by using the semiconductor device of the present invention for a CPU that controls a video detection circuit, a video processing circuit, an audio detection circuit, and an audio processing circuit of a television device, a television device is manufactured at low cost and with high throughput and yield. be able to. For this reason, it can be applied to various uses as a display medium having a particularly large area, such as a wall-mounted television device, an information display board in a railway station or airport, and an advertisement display board in a street.

    26A and 26B are diagrams illustrating an example of a digital camera. FIG. 26A is a perspective view seen from the front side of the digital camera, and FIG. 26B is a perspective view seen from the rear side. In FIG. 26A, the digital camera is provided with a relays button 1301, a main switch 1302, a finder window 1303, a flash 1304, a lens 1305, a lens barrel 1306, and a housing 1307.

  In FIG. 26B, a viewfinder eyepiece window 1311, a monitor 1312, and operation buttons 1313 are provided.

    When the relay button 1301 is pressed down to a half position, the focus adjustment mechanism and the exposure adjustment mechanism are operated, and when the relay button 1301 is pressed down to the lowest position, the shutter is opened.

    A main switch 1302 switches on / off the power of the digital camera when pressed or rotated.

    The viewfinder window 1303 is arranged on the front of the lens 1305 on the front surface of the digital camera, and is a device for confirming the shooting range and focus position from the viewfinder eyepiece window 1311 shown in FIG.

  The flash 1304 is disposed on the entire upper surface of the digital camera, and emits auxiliary light at the same time as the shutter button is opened by pressing the release button when the subject brightness is low.

    The lens 1305 is disposed in front of the digital camera. The lens includes a focusing lens, a zoom lens, and the like, and constitutes a photographing optical system together with a shutter and a diaphragm (not shown). In addition, an imaging element such as a CCD (Charge Coupled Device) is provided behind the lens.

    The lens barrel 1306 moves the lens position in order to focus the focusing lens, the zoom lens, and the like. During photographing, the lens 1305 is moved forward to move the lens 1305 forward. In addition, when carrying, the lens 1305 is moved down to be compact. In this embodiment, the structure is such that the subject can be zoomed by extending the lens barrel. However, the structure is not limited to this structure, and the structure of the imaging optical system in the housing 1307 is not limited. It may be a digital camera capable of zooming without extending the cylinder.

    The viewfinder eyepiece window 1311 is provided on the upper rear surface of the digital camera, and is a window provided for eye contact when confirming a shooting range and a focus position.

    The operation buttons 1313 are various function buttons provided on the rear surface of the digital camera, and include a setup button, a menu button, a display button, a function button, a selection button, and the like.

    By using a display device which is an embodiment of the semiconductor device of the present invention for a monitor, a digital camera can be manufactured at low cost and with high throughput and yield. In addition, a CPU that performs related processing in response to operation inputs of various function buttons, main switches, relays buttons, etc., a circuit that performs an autofocus operation and an autofocus adjustment operation, a strobe light emission drive control, and a CCD drive timing A control circuit, an image pickup circuit that generates an image signal from a signal photoelectrically converted by an image pickup device such as a CCD, an A / D conversion circuit that converts an image signal generated by the image pickup circuit into a digital signal, and writing image data into a memory By using a CPU that is an example of the semiconductor device of the present invention for a CPU that controls each circuit such as a memory interface that reads image data, a digital camera can be manufactured at low cost and with high throughput and yield. It is.

Sectional drawing explaining the process of forming the film | membrane pattern which concerns on this invention. Sectional drawing explaining the process of forming the film | membrane pattern which concerns on this invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B illustrate a manufacturing process of a semiconductor device according to the present invention. 8A and 8B illustrate a manufacturing process of a semiconductor device according to the present invention. 8A and 8B illustrate a manufacturing process of a semiconductor device according to the present invention. 8A and 8B illustrate a manufacturing process of a semiconductor device according to the present invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 1 is a cross-sectional view of a semiconductor device according to the present invention. The figure explaining the contact angle of the area | region with low paintability and the area | region with high paintability. 2A and 2B illustrate a structure of a droplet discharge device that can be applied to the present invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. FIG. 6 is a top view illustrating a method for mounting a driver circuit of a display device according to the present invention. 9 is a cross-sectional view illustrating a method for mounting a driver circuit of a display device according to the present invention. FIG. 6 illustrates a structure of a liquid crystal display module according to the present invention. FIG. 6 illustrates a structure of a light-emitting display module according to the present invention. 4A and 4B each illustrate a mode of a light-emitting element that can be applied to the present invention. FIG. 9 is a block diagram illustrating a structure of an electronic device. 10A and 10B each illustrate an example of an electronic device. 10A and 10B each illustrate an example of an electronic device.

Explanation of symbols

11 First pixel electrode 16 Layer containing luminescent material 17 Electrode 32 Electrode layer 33 Electrode layer 34 Electrode layer 35 Electrode layer 41 Hole injection layer or hole transport layer 42 Light emission layer 43 Electron transport layer or electron injection layer 101 Substrate 102 First film 103 Mask 104 Area with low wettability 105 Area with high wettability 106 Solution or film pattern 110 First film 201 Insulating film, semiconductor film or conductive film 202 Mask 203 Film pattern 210 First film 301 Gate electrode 302 Gate insulating film 303 First semiconductor film 304 Second semiconductor film 305 Mask 312 First semiconductor region 313 Second semiconductor region 314 Source and drain electrodes 321 Third semiconductor region 323 Interlayer insulating film 331 Wiring or pixel Electrode 402 First insulating film 403 Semiconductor film 404 Solution 405 Laser beam 411 Source Region and drain region 412 First film 413 Gate insulating film 421 Gate electrode 501 Substrate 502 Silicon nitride film 503 First film 504 Mask 505 Low wettability region 506 Highly wettable region 507 Wiring 510 First film 1001 Substrate 1002 Silicon oxide film 1003 First film 1004 Mask 1005 Low wettability region 1006 Highly wettability region 1007 Gate electrode 1008 Gate insulating film 1009 Amorphous silicon film 1010 First film 1011 Crystalline silicon film 1012 Second Amorphous silicon film or second crystalline silicon film 1013 First film 1014 Mask 1015 Low wettability region 1016 Mask 1017 Conductive film 1018 First film 1021 Source electrode and drain electrode 1022 Crystalline silicon film 1023 Passivation film 1024 first film 1025 mass 1026 Interlayer insulating film 1027 Pixel electrode 1050 Laser beam 1101 Antenna 1102 Tuner 1103 Intermediate frequency amplifier 1104 Video detection circuit 1105 Audio detection circuit 1106 Video system processing circuit 1107 Audio system processing circuit 1108 Video system output unit 1109 Audio output unit 1151 Case 1152 Display unit 1153 Speaker unit 1154 Operation unit 1155 Video input terminal 1200 First substrate 1201 Signal line driver circuit 1202 Pixel unit 1203 Scan line driver circuit 1204 Substrate 1205 Sealant 1206 Sealant 1208 Connection wiring 1209 FPC
1210 Connection region 1211 Switching TFT
1212 Driving TFT
1213 1st pixel electrode 1214 Insulator 1215 Layer 1216 containing luminescent material 2nd pixel electrode 1217 Light emitting element 1218 Protective laminated film 1220 Interlayer insulating film 1221 n-channel TFT
1222 p-channel TFT
1225 Polarizing plate 1226 Antireflection film 1227 Anisotropic conductive resin 1229 Retardation plate 1301 Relays button 1302 Main switch 1303 Viewfinder window 1304 Flash 1305 Lens 1306 Lens barrel 1307 Case 1311 Viewfinder eyepiece window 1312 Monitor 1313 Operation button 1401 Substrate 1403 Gate electrode Or gate wiring 1404 gate insulating film 1405 semiconductor film 1406 n-type or p-type semiconductor film 1407 source electrode 1408 passivation film 1409 interlayer insulating film 1410 pixel electrode 1411 alignment film 1412 counter substrate 1414 connection terminal 1415 anisotropic conductive film 1416 liquid crystal material 1420 Pixel portion 1421 Connection terminal portion 1500 Substrate 1501 Pixel portion 1502 Signal line driver circuit 1503a Scan line driver circuit 1503b Scan line Dynamic circuit 1505 IC chip 1506 FPC
1600 Sealant 1601 Substrate 1602 Substrate 1603 Pixel portion 1604 Liquid crystal layer 1605 Colored layer 1606 Polarizing plate 1607 Polarizing plate 1608 Connection terminal 1609 FPC
1610 Wiring board 1611 Pixel driving circuit 1612 External circuit 1613 Cold cathode tube 1614 Reflector 1615 Optical film 1616 Protective film 1617 Bezel 1701 Substrate 1702 Pixel electrode 1703 Insulating film 1711 Mask 1712 Insulating film 1721 Organic EL material 1722 Organic EL material 1723 Pixel electrode 1724 Conductive material 1731 Insulating film 1732 Organic EL material 1733 Pixel electrode 1900 Substrate 1903a Head 1903b Head 1903c Head 1904 Imaging means 1905 Droplet ejection means 1907 Control means 1908 Storage medium 1909 Image processing means 1910 Computer 1911 Marker 1930 Panel 1931 Stage 2001 Substrate 2002a Electrode Pad 2002b Electrode pad 2003 Driver IC
2004a connection terminal 2004b connection terminal 2005 protective insulating film 2006 anisotropic conductive adhesive 2007 conductive particle 2008 conductive particle 2011a buffer layer 2011b buffer layer 2012a bump 2012b bump 2013 photocurable insulating resin 2021 adhesive 2022a wire 2022b wire 2023 organic Resin 2031 FPC
2032 Wiring

Claims (18)

Forming a first film on the substrate;
Discharging a solution containing a mask material onto the first film to form a mask on the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; A method for manufacturing a semiconductor device, comprising: Forming a first film on the substrate;
Forming a mask on the first film by discharging a solution containing a surfactant and a mask material onto the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; A method for manufacturing a semiconductor device, comprising: Forming a first film on the substrate;
Discharging a solution containing a mask material onto the first film to form a mask on the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; Have
A contact angle of the solution containing the mask material with respect to the first film is smaller than a contact angle of the solution containing the insulating film, semiconductor film or conductive film material with respect to the first film. Manufacturing method. Forming a first film on the substrate;
Forming a mask on the first film by discharging a solution containing a surfactant and a mask material onto the first film;
Patterning the first film using the mask to form a low wettability region and a high wettability region on the substrate;
Removing the mask;
Forming a pattern of an insulating film, a semiconductor film, or a conductive film by discharging a solution containing an insulating film, a semiconductor film, or a conductive film material to the highly wettable area sandwiched between the low wettability areas; Have
A contact angle of the solution containing the mask material with respect to the first film is smaller than a contact angle of the solution containing the insulating film, semiconductor film or conductive film material with respect to the first film. Manufacturing method.   5. The method according to claim 1, wherein a region where the first film is present by the patterning is a region with low wettability, and a region where the first film is removed is a region with high wettability. A method for manufacturing a semiconductor device.   In any one of Claims 1-5, the contact angle of the solution containing the said insulating film, a semiconductor film, or electrically conductive film material in the area | region where the said wettability is low is the said insulating film in the said highly wettable area | region, A method for manufacturing a semiconductor device, wherein the contact angle of a solution containing a semiconductor film or a conductive film material is larger.   7. The method for manufacturing a semiconductor device according to claim 6, wherein a difference between a contact angle in the low wettability region and a contact angle in the high wettability region is 30 degrees or more.   8. The method for manufacturing a semiconductor device according to claim 1, wherein the first film is made of a compound having a fluorocarbon chain.   9. The method for manufacturing a semiconductor device according to claim 1, wherein the solution containing the mask material is discharged in a state where the substrate is heated. Forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over the substrate;
Forming a first mask on the first film by discharging a solution containing a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
A method for manufacturing a semiconductor device, characterized by etching the patterned first film and the insulating film, the semiconductor film, or the conductive film using the second mask. Forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over the substrate;
Forming a first mask on the first film by discharging a solution containing a surfactant and a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
A method for manufacturing a semiconductor device, characterized by etching the patterned first film and the insulating film, the semiconductor film, or the conductive film using the second mask. Forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over the substrate;
Forming a first mask on the first film by discharging a solution containing a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
Etching the patterned first film using the second mask and etching the insulating film, semiconductor film, or conductive film,
The contact angle of the solution containing the first mask material with respect to the first film is smaller than the contact angle of the solution containing the second mask material with respect to the first film. Manufacturing method. Forming a first film in contact with an insulating film, a semiconductor film, or a conductive film formed over the substrate;
Forming a first mask on the first film by discharging a solution containing a surfactant and a first mask material on the first film;
Patterning the first film using the first mask to form a low wettability region and a high wettability region on the insulating film, semiconductor film or conductive film surface;
Removing the first mask;
Forming a second mask by discharging a solution containing a second mask material to the high wettability region sandwiched between the low wettability regions;
Etching the patterned first film using the second mask and etching the insulating film, semiconductor film, or conductive film,
The contact angle of the solution containing the first mask material with respect to the first film is smaller than the contact angle of the solution containing the second mask material with respect to the first film. Manufacturing method.   14. The region according to claim 10, wherein the region where the first film is present by the patterning is a region with low wettability, and the region from which the first film is removed is a region with high wettability. A method for manufacturing a semiconductor device.   The contact angle of the solution containing the second mask material in the low wettability region according to any one of claims 10 to 14 includes the second mask material in the high wettability region. A method for manufacturing a semiconductor device, wherein the contact angle is larger than a contact angle of a solution to be processed.   16. The method for manufacturing a semiconductor device according to claim 15, wherein a difference between a contact angle in the low wettability region and a contact angle in the high wettability region is 30 degrees or more.   17. The method for manufacturing a semiconductor device according to claim 10, wherein the first film is made of a compound having a fluorocarbon chain. 18. The method for manufacturing a semiconductor device according to claim 10, wherein the solution containing the first mask material is discharged in a state where the substrate is heated.