CN114582990B - Ultra-wideband random spectrum field effect transistor based on super surface - Google Patents
Ultra-wideband random spectrum field effect transistor based on super surface Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a super-surface based ultra-wideband random spectrum field effect transistor, which sequentially comprises a conductive substrate, an oxide insulating layer and a metal-doped dielectric film layer from bottom to top; a random spectrum absorber, a source electrode and a drain electrode which are positioned at two sides of the random spectrum absorber are arranged on the dielectric thin film layer; the conductive substrate is used as a grid electrode; by modulating the phases of the transmitted light and the reflected light of the random spectral absorber such that the sum ψ of the phase differences of the transmitted light and the reflected light is m pi and the random number m varies randomly with wavelength in the range of 1 to 2, a spectral curve in which the absorbance fluctuates randomly with wavelength between the maximum value and the minimum value can be produced. The working wavelength range of the ultra-wideband random spectrum field effect transistor provided by the invention covers near ultraviolet light, visible light, near infrared and partial intermediate infrared, namely the wavelength is 0.3-3.6 microns; the numerical aperture can reach 0.9; and has nearly the same absorption spectrum curve for two polarized lights that can be orthogonally resolved.
Description
Technical Field
The invention belongs to the field of photoelectric sensors and semiconductors, and relates to a super-surface based ultra-wideband random spectrum field effect transistor.
Background
Spectroscopic techniques began in the 80's of the 20 th century and underwent a progression from initial multi-wavelength measurements to current imaging spectral scans, from optomechanical scanning to point-and-plane array push-sweeps. The hyperspectral remote sensing cameras can be roughly classified into scanning cameras and Snapshot cameras (Snapshot) according to different working principles. The scanning camera can be classified into a point scan (Whiskbroom), a line scan (Pushbroom), and a spectral scan (Staring) according to the scanning manner. In 2000, both the NASA and 2011, the NASA and the 2011, all hyperspectral cameras loaded on satellites in China are scanning cameras, and the wavelength range of hyperspectral operation is increased by using a prism or other light splitting elements, although the working wavelength of the hyperspectral operation can reach 0.3-2.5 microns at present, the hyperspectral cameras need to be scanned by one wavelength, so that the weight of the hyperspectral cameras is increased, and the time for collecting image information is also increased. When we are flat scanning with the high spectral camera dress of scanning formula on unmanned aerial vehicle, unmanned aerial vehicle's flying speed can receive the influence of above-mentioned two reasons and can not be too fast to reduce cruise distance and time. Most of snapshot hyperspectral cameras are optical systems integrated by optical filters and image sensors, and are portable and capable of taking pictures in real time like commercial cameras commonly used in life. However, the disadvantage is that the operating wavelength is limited by the image sensor, and there is no image sensor capable of operating at ultraviolet, visible, near infrared and partial mid-infrared wavelengths at the same time. Therefore, the broadband image sensor becomes an emerging research field, many subjects adopt a micro-nano optical principle to design a broadband absorber to prolong the spectral response wavelength of the image sensor, but at present, no absorber exists which has a working wavelength of 0.3-3.6 micrometers and keeps the absorption spectrum basically unchanged under TE and TM polarized light with the wavelength.
Disclosure of Invention
Aiming at the problems, the invention provides an ultra-wideband random spectrum field effect transistor based on a super surface, which solves the problems that the working wavelength range is too small due to overlarge transmissivity and undersize absorptivity of partial working wavelength of a traditional semiconductor material, and the numerical aperture of a spectrum camera is too small due to the fact that a traditional hyperspectral narrowband filter is easily influenced by an incident angle.
The purpose of the invention is realized by the following technical scheme: an ultra-wideband random spectrum field effect transistor based on a super surface sequentially comprises a conductive substrate, an oxide insulating layer and a metal-doped dielectric film layer from bottom to top; a random spectrum absorber, a source electrode and a drain electrode which are positioned at two sides of the random spectrum absorber are arranged on the medium thin film layer; the conductive substrate is used as a grid electrode;
the random spectrum absorber comprises a first metal layer, and the first metal layer is provided with nano holes arranged in a regular hexagonal array to form Surface Plasmon Polaritons (SPPs); sequentially filling a dielectric layer into each nanopore to form a dielectric nano disc, and filling a second metal layer to form a metal nano disc; forming a local surface plasma LSP (label-switched path) by the metal nano disc;
by modulating the phases of the transmitted light and the reflected light of the random spectral absorber such that the sum ψ of the phase differences of the transmitted light and the reflected light is m pi and that the random number m varies randomly with wavelength in the range of 1 to 2, a spectral curve in which the absorbance fluctuates randomly with wavelength between the maximum value and the minimum value can be produced.
Further, the phase modulation of the transmission light and the reflection light of the random spectrum absorber is realized by adjusting the shape and the size of the nano hole and the thicknesses of the medium nano disc and the metal nano disc.
Furthermore, the substrate is made of P-type silicon base doped with boron, so that the conductivity of the substrate can be increased.
Furthermore, the oxide insulating layer is a silicon dioxide insulating layer with the thickness of 10-20 nanometers.
Furthermore, the medium film layer adopts an aluminum-doped zinc oxide film layer (AZO for short) which is a channel for the transition of thermoelectrons in the field effect tube and has the thickness of 30-50 nanometers.
Further, the random spectral absorber is a super-surface structure, and the materials of the first metal layer and the second metal layer may be the same or different, and may be selected from aluminum, silver and gold; the dielectric layer material in the nano-pores is silicon dioxide.
Further, in the random spectral absorber, the thicknesses of the first metal layer and the second metal layer are respectively 10-40 nanometers, and the thickness of the dielectric layer in the nano-holes is 50-150 nanometers.
Furthermore, in the random spectral absorber, the shape of the nanopore is a centrosymmetric geometric shape, and can be a circle, a concentric circular ring shape, a regular polygon or a concentric regular polygon ring shape; the maximum outer diameter of the nanopore is no more than 3 microns.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the working wavelength range of the ultra-wideband random spectrum field effect transistor covers near ultraviolet light, visible light, near infrared and partial middle infrared, namely the wavelength is 0.3-3.6 microns.
2. The numerical aperture of the ultra-wideband random spectrum field effect transistor can reach 0.9.
3. The ultra-wideband random spectrum field effect transistor has almost the same absorption spectrum curve for two polarized lights (such as TE and TM) which can be orthogonally decomposed.
Drawings
FIG. 1 is a schematic diagram of a super-surface based ultra-wideband random-spectrum field effect transistor structure according to an embodiment of the present invention;
FIG. 2 is a perspective view of a random spectral absorber provided in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of a phase of a random spectral absorber according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an absorption spectrum curve of a random spectral absorber provided in an embodiment of the present invention;
FIG. 5 is a schematic illustration of the polarization insensitivity of a random spectral absorber provided by an embodiment of the present invention;
fig. 6 is a flowchart of a super-surface based ultra-wideband random spectrum fet processing according to an embodiment of the present invention.
Detailed Description
For better understanding of the technical solutions of the present application, the following detailed descriptions of the embodiments of the present application are provided with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The invention provides a super-surface based ultra-wideband random spectrum field effect transistor, which sequentially comprises a conductive substrate, an oxide insulating layer and a metal-doped dielectric film layer from bottom to top; a random spectrum absorber, a source electrode and a drain electrode which are positioned at two sides of the random spectrum absorber are arranged on the medium thin film layer; the conductive substrate is used as a grid electrode; the random spectrum absorber comprises a first metal layer, and the first metal layer is provided with nano holes arranged in a regular hexagonal array to form Surface Plasmon Polaritons (SPPs); sequentially filling a dielectric layer into each nanopore to form a dielectric nano disc, and filling a second metal layer to form a metal nano disc; the metal nanodiscs form localized surface plasmons LSP.
In one embodiment, as shown in fig. 1, the substrate is made of P-type silicon doped with boron, which can increase the conductivity of the substrate. The oxide insulating layer is a silicon dioxide insulating layer with the thickness of 10-20 nanometers. The medium film layer is an aluminum-doped zinc oxide film layer which is a channel for thermo-electron transition in the field effect transistor and has the thickness of 30-50 nanometers.
Furthermore, the shape of the nanopore in the random spectral absorber is a centrosymmetric geometric shape, and can be circular, concentric circular ring, regular polygon, concentric regular polygon ring, etc. A perspective view of a nanopore using a circular random spectral absorber is shown in fig. 2.
Further, the random spectral absorber is of a super-surface structure, the materials of the first metal layer and the second metal layer can be the same or different, and aluminum, silver and gold can be selected; the dielectric layer material in the nanopore is silicon dioxide. The thicknesses of the first metal layer and the second metal layer are respectively 10-40 nanometers, and the thickness of the dielectric layer in the nanometer hole is 50-150 nanometers. The maximum outer diameter of the nanopore is no more than 3 microns.
By modulating the phases of the transmitted light and the reflected light of the random spectral absorber such that the sum ψ of the phase differences of the transmitted light and the reflected light is m pi and that the random number m varies randomly with wavelength in the range of 1 to 2, a spectral curve in which the absorbance fluctuates randomly with wavelength between the maximum value and the minimum value can be produced.
In one embodiment, phase modulation of transmitted and reflected light of the random spectral absorber is achieved by adjusting the shape and size of the nanopores, the thickness of the dielectric nanodisk, and the thickness of the metal nanodisk. The phase principle of the random spectral absorber is shown in fig. 3.
The super-surface based ultra-wideband random spectrum field effect transistor has the working wavelength range covering near ultraviolet light, visible light, near infrared and partial mid-infrared, namely the wavelength is 0.3-3.6 microns; the numerical aperture can reach 0.9; and has nearly the same absorption spectrum curve for two polarized lights (e.g., TE, TM) that can be resolved orthogonally. The absorption spectrum curve of the random spectral absorber is shown in fig. 4. The polarization insensitivity of the random spectral absorber is shown in fig. 5.
The following is an example of a super-surface based ultra-wideband random spectral field effect transistor fabrication process, including the steps of:
first, as shown in fig. 6(a), a heavily P-doped single-polishing silicon substrate, which is also a gate of a field effect transistor, is selected as a substrate of a sample, and a reference doping material and boron 10 are used as reference doping materials 20 cm -3 . The doping concentration can here be confirmed by looking up a table and measuring the resistance of the substrate using an ammeter.
In the second step, as shown in FIG. 6(b), silicon dioxide of 10-20 nm is grown on the substrate as an insulating layer using a thin film evaporation apparatus. The size of the thickness determines the energy required for the carrier electrons to jump from the zinc oxide layer to the silicon substrate. The final size of the thickness therefore also needs to be determined after subsequent measurements and optimization of the spectral response of the fet under different illumination and bias voltages.
Then, an n-type zinc oxide thin film (abbreviated as AZO, which means aluminum-doped zinc oxide) with a thickness of about 30-50 nm is grown on the silicon dioxide by using an atomic layer deposition device, and the doping concentration can be changed by adjusting the plating time of aluminum and zinc oxide respectively, as shown in fig. 6 (c).
Next, positive resist ZEP was coated on the zinc oxide film and a 2 × 6.5 μm rectangle was photo-etched on both sides using an electron beam exposure machine, and zinc oxide was etched through as the position of the electrode using an etching machine, as shown in fig. 6 (d).
ZDMAC was used to remove ZEP using a thin film evaporation apparatus plated with 5 nm chromium as adhesion layer and 200 nm gold as electrode, as in fig. 6 (e).
Then machining the nanopores of the absorber (see fig. 6(f) and 6 (g)): plating 100 nm positive glue PMMA, photoetching with an electron beam exposure machine, plating a metal nano-pore layer with a film evaporation plating machine, and removing glue by using acetone, isopropanol and water.
Finally, making a medium and a metal nano-disc, as shown in fig. 6(h) and fig. 6 (i): plating a layer of positive glue PMMA, photoetching the shape of the nano disc in the PMMA by using an electron beam exposure machine and an alignment technology, plating a medium and metal by using a film evaporation machine, and finally removing the glue by using acetone, isopropanol and water to complete the processing and manufacturing of the absorber. It can be found that the electrodes and the micro-nano structure are not in contact with each other and are not conductive.
The above description is intended only to be exemplary of the one or more embodiments of the present disclosure, and should not be taken as limiting the one or more embodiments of the present disclosure, as any modifications, equivalents, improvements, etc. that come within the spirit and scope of the one or more embodiments of the present disclosure are intended to be included within the scope of the one or more embodiments of the present disclosure.
Claims (9)
1. The ultra-wideband random spectrum field effect transistor based on the super surface is characterized in that a conductive substrate, an oxide insulating layer and a metal-doped dielectric film layer are sequentially arranged from bottom to top; a random spectrum absorber, a source electrode and a drain electrode which are positioned at two sides of the random spectrum absorber are arranged on the medium thin film layer; the conductive substrate is used as a grid electrode;
the random spectrum absorber comprises a first metal layer, and the first metal layer is provided with nano holes arranged in a regular hexagonal array to form Surface Plasmon Polaritons (SPPs); sequentially filling a dielectric layer into each nanopore to form a dielectric nano disc, and filling a second metal layer to form a metal nano disc; forming a local surface plasma LSP (label-switched path) by the metal nano disc;
by modulating the phases of the transmitted light and the reflected light of the random spectral absorber such that the sum psi = m pi of the phase differences of the transmitted light and the reflected light, and the random number m varies randomly with wavelength in the range of 1-2, a spectral curve can be generated in which the absorbance fluctuates randomly with wavelength between a maximum value and a minimum value.
2. The ultra-wideband stochastic spectral field effect transistor based on super-surface of claim 1, wherein phase modulation of transmitted and reflected light of the stochastic spectral absorber is achieved by adjusting shape and size of the nanopore, thickness of the dielectric nanodisk and the metal nanodisk.
3. The ultra-wideband random spectral fet based on super-surface as claimed in claim 1, wherein said substrate is a boron-doped P-type silicon substrate.
4. The ultra-wideband random spectral fet based on super-surface as claimed in claim 1, wherein the oxide insulating layer is a silicon dioxide insulating layer with a thickness of 10-20 nm.
5. The ultra-wideband random spectrum field effect transistor based on super surface as claimed in claim 1, wherein the dielectric thin film layer is a zinc oxide thin film layer doped with aluminum, and is a channel for thermo-electronic transition in the field effect transistor, and the thickness is 30-50 nm.
6. The ultra-wideband stochastic spectral field effect transistor (UWB-based FET) according to claim 1 wherein the stochastic spectral absorber is a super-surface structure, and the first metal layer and the second metal layer are made of the same or different materials, such as aluminum, silver, or gold; the dielectric layer material in the nano-pores is silicon dioxide.
7. The ultra-wideband random spectral field effect transistor based on super-surface as claimed in claim 1, wherein the thickness of the first metal layer and the second metal layer in the random spectral absorber is 10-40 nm, respectively, and the thickness of the dielectric layer in the nanopore is 50-150 nm.
8. The ultra-wideband stochastic spectral field effect transistor based on super-surface of claim 1, wherein the shape of the nanopore in the stochastic spectral absorber is a centrosymmetric geometry, and is circular, concentric circular ring shape, regular polygon or concentric regular polygon ring shape; the maximum outer diameter of the nanopore is no more than 3 microns.
9. The ultra-wideband random-spectrum fet based on a super surface as claimed in claim 1, wherein the operating wavelength range of the ultra-wideband random-spectrum fet covers near uv, visible, near ir and part of the mid ir, i.e. the wavelength is 0.3-3.6 microns; the numerical aperture can reach 0.9.
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| JP2019219272A (en) * | 2018-06-20 | 2019-12-26 | 公立大学法人大阪 | Plasmon resonance structure, plasmon resonance sensor and plasmon resonance measurement system using the same, and method for manufacturing plasmon resonance structure |
| CN109932766A (en) * | 2019-03-15 | 2019-06-25 | 深圳大学 | A kind of wave absorbing device of visible light and near infrared band |
| CN112420852A (en) * | 2020-11-28 | 2021-02-26 | 郑州大学 | Two-dimensional material photodetector and preparation method thereof |
| CN113359220A (en) * | 2021-06-10 | 2021-09-07 | 浙江大学 | Spectral filter based on three-dimensional annular structure and application |
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