JP2006093277A - 光半導体装置、光通信装置および電子機器 - Google Patents
光半導体装置、光通信装置および電子機器 Download PDFInfo
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】 上記リードフレーム1に実装されているLED2を、トランスファーモールド成型によって、フィラーを添加した透光性のモールド樹脂4にて封止する。上記透光性のモールド樹脂4は、光半導体装置の動作温度範囲内の温度上昇に対してその透過率が増加する特性を有している。
【選択図】 図1
Description
光半導体素子と、
この光半導体素子を封止するように配置されると共に、ベース樹脂とフィラーを含む透光性樹脂と
を備え、
上記透光性樹脂は、動作温度範囲内における温度上昇に伴もなって透過率が増加することを特徴としている。
上記光ファイバの温度上昇による上記光ファイバ内の通信光の減衰率が、上記半導体素子の上記透光性樹脂の温度上昇による透過率増加係数に対応している。
上記光半導体装置の光半導体素子の温度上昇による発光波長の変化による光ファイバ内の通信光の減衰率が、上記透光性樹脂の温度上昇による透過率増加係数に対応している。
図1は、本発明の第1実施形態の光半導体装置を示す図である。詳細には、図1(A)は、第1実施形態の光半導体装置の正面透視図であり、図1(B)は、第1実施形態の光半導体装置の側面透視図である。
図6は、本発明の第2実施形態の光半導体装置を示す図である。詳細には、図6(A)は、第2実施形態の光半導体装置の正面透視図であり、図6(B)は、第2実施形態の光半導体装置の側面透視図である。
図7は、本発明の第3実施形態の光半導体装置を示す図である。詳細には、図7(A)は、第3実施形態の光半導体装置の正面透視図であり、図7(B)は、第3実施形態の光半導体装置の側面透視図である。
2 LED
3,63 ワイヤー
4,64 モールド樹脂
62 PD
76 駆動集積回路
Claims (12)
- 光半導体素子と、
この光半導体素子を封止するように配置されると共に、ベース樹脂とフィラーを含む透光性樹脂と
を備え、
上記透光性樹脂は、動作温度範囲内における温度上昇に伴もなって透過率が増加することを特徴とする光半導体装置。 - 請求項1に記載の光半導体装置において、
上記透光性樹脂の上記ベース樹脂の屈折率と、上記透光性樹脂の上記フィラーの屈折率は、動作温度範囲の上限以上の一つの温度で一致していることを特徴とする光半導体装置。 - 請求項1に記載の光半導体装置において、
上記光半導体素子は、発光素子であることを特徴とする光半導体装置。 - 請求項1に記載の光半導体装置において、
上記光半導体素子は、受光素子であることを特徴とする光半導体装置。 - 請求項3に記載の光半導体装置において、
上記透光性樹脂における上記透過率の温度上昇による透過率増加係数は、上記発光素子の温度上昇による光出力低下係数を略相殺することを特徴とする光半導体装置。 - 請求項5に記載の半導体装置において、
上記透光性樹脂の上記透過率増加係数は、上記透光性樹脂の上記フィラーの量に対応していることを特徴とする光半導体装置。 - 請求項5に記載の光半導体装置において、
上記透光性樹脂の上記透過率増加係数は、上記透光性樹脂のベース樹脂の温度上昇に対する屈折率の減少量に対応していることを特徴とする光半導体装置。 - 請求項3に記載の光半導体装置において、
上記発光素子を駆動する発光素子駆動回路を備え、
上記発光素子駆動回路は、上記発光素子の温度上昇による光出力の変動を補正する補正回路を有していることを特徴とする光半導体装置。 - 請求項8に記載の光半導体装置において、
上記透光性樹脂の温度上昇による透過率増加と上記発光素子駆動回路の上記補正回路による光出力の変動の補正とにより、上記発光素子の温度上昇による光出力の低下を相殺することを特徴とする光半導体装置。 - 請求項1に記載の光半導体装置と、光ファイバとを備えて、上記光ファイバを伝送媒体として光信号を送受信する光通信装置であって、
上記光ファイバの温度上昇による上記光ファイバ内の通信光の減衰率が、上記半導体素子の上記透光性樹脂の温度上昇による透過率増加係数に対応していることを特徴とする光通信装置。 - 請求項1に記載の光半導体装置と、光ファイバとを備えて、上記光ファイバを伝送媒体として光信号を送受信する光通信装置であって、
上記光半導体装置の光半導体素子の温度上昇による発光波長の変化による光ファイバ内の通信光の減衰率が、上記透光性樹脂の温度上昇による透過率増加係数に対応していることを特徴とする光通信装置。 - 請求項1に記載の光半導体装置を備えていることを特徴とする電子機器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2004274695A JP4348267B2 (ja) | 2004-09-22 | 2004-09-22 | 光半導体装置、光通信装置および電子機器 |
TW094131906A TWI280673B (en) | 2004-09-22 | 2005-09-15 | Optical semiconductor device, optical communication device, and electronic equipment |
DE102005044396A DE102005044396A1 (de) | 2004-09-22 | 2005-09-16 | Optische Halbleitervorrichtung, insbesondere für optische Kommunikationsvorrichtung und damit ausgestattete elektronische Einrichtung |
US11/230,822 US7410305B2 (en) | 2004-09-22 | 2005-09-21 | Optical semiconductor device, optical communication device, and electronic equipment |
CNB2005101069467A CN100382286C (zh) | 2004-09-22 | 2005-09-22 | 光半导体装置、光通信装置和电子设备 |
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JP2004274695A JP4348267B2 (ja) | 2004-09-22 | 2004-09-22 | 光半導体装置、光通信装置および電子機器 |
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JP2006093277A true JP2006093277A (ja) | 2006-04-06 |
JP4348267B2 JP4348267B2 (ja) | 2009-10-21 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7986050B2 (en) | 2008-07-28 | 2011-07-26 | Nitto Denko Corporation | Epoxy resin composition for optical semiconductor element encapsulation and optical semiconductor device using the same |
JP2013529842A (ja) * | 2010-08-20 | 2013-07-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品および散乱体 |
KR101323246B1 (ko) | 2011-11-21 | 2013-10-30 | 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 | 반도체 소자용 본딩 와이어, 그 제조방법, 반도체 소자용 본딩 와이어를 포함하는 발광다이오드 패키지 |
JP2014119570A (ja) * | 2012-12-14 | 2014-06-30 | Fujikura Ltd | 光パワーモニタ装置、製造方法、及び光パワーモニタ方法 |
JP2015195325A (ja) * | 2014-03-15 | 2015-11-05 | オムロン株式会社 | フォトセンサ |
US10879436B2 (en) | 2015-03-05 | 2020-12-29 | Nichia Corporation | Light emitting device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4255934B2 (ja) * | 2005-08-26 | 2009-04-22 | シャープ株式会社 | 半導体素子、および、この半導体素子を用いた電子機器 |
TW201616689A (zh) * | 2014-06-25 | 2016-05-01 | 皇家飛利浦有限公司 | 經封裝之波長轉換發光裝置 |
JP6385234B2 (ja) | 2014-10-16 | 2018-09-05 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2346075Y (zh) * | 1998-11-09 | 1999-10-27 | 陈兴 | 发光二极管 |
JP3835518B2 (ja) * | 2000-09-13 | 2006-10-18 | 信越化学工業株式会社 | 光透過性エポキシ樹脂組成物及び半導体装置 |
JP2003003043A (ja) * | 2001-06-26 | 2003-01-08 | Matsushita Electric Works Ltd | 光半導体封止用エポキシ樹脂組成物及び光半導体装置 |
DE10131698A1 (de) * | 2001-06-29 | 2003-01-30 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
ATE479725T1 (de) * | 2002-01-25 | 2010-09-15 | Sumitomo Bakelite Co | Transparente verbundzusammensetzung |
-
2004
- 2004-09-22 JP JP2004274695A patent/JP4348267B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-22 CN CNB2005101069467A patent/CN100382286C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7986050B2 (en) | 2008-07-28 | 2011-07-26 | Nitto Denko Corporation | Epoxy resin composition for optical semiconductor element encapsulation and optical semiconductor device using the same |
JP2013529842A (ja) * | 2010-08-20 | 2013-07-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品および散乱体 |
US9082944B2 (en) | 2010-08-20 | 2015-07-14 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and scattering body |
KR101323246B1 (ko) | 2011-11-21 | 2013-10-30 | 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 | 반도체 소자용 본딩 와이어, 그 제조방법, 반도체 소자용 본딩 와이어를 포함하는 발광다이오드 패키지 |
JP2014119570A (ja) * | 2012-12-14 | 2014-06-30 | Fujikura Ltd | 光パワーモニタ装置、製造方法、及び光パワーモニタ方法 |
JP2015195325A (ja) * | 2014-03-15 | 2015-11-05 | オムロン株式会社 | フォトセンサ |
US10879436B2 (en) | 2015-03-05 | 2020-12-29 | Nichia Corporation | Light emitting device |
Also Published As
Publication number | Publication date |
---|---|
CN100382286C (zh) | 2008-04-16 |
JP4348267B2 (ja) | 2009-10-21 |
CN1753170A (zh) | 2006-03-29 |
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