JP2006086233A - Multilayer interconnection board and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayer interconnection board having improved electrical characteristics and mechanical characteristics. <P>SOLUTION: A resin composition contains a solvent soluble annular olefin resin (A), an inorganic filler (B) having an average grain size of 800 nm or smaller, and a solvent (C) in which the annular olefin resin (A) can be dissolved. The multilayer interconnection board contains an insulating layer composed of the resin composition by dispersing the inorganic filler (B) in a solvent containing the solvent (C). In the inorganic filler (B), the resin composition that is a silica filler is used. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a multilayer wiring board and a method for manufacturing a multilayer wiring board.

  In recent years, with the demand for higher functionality and lighter, thinner and smaller electronic devices, electronic components used in electronic devices have become more densely integrated and more densely packaged. It has been broken. A problem for achieving high-speed transmission of electronic devices is signal degradation when transmitting an electrical signal, which is particularly problematic for input / output interfaces exceeding 1 GHz. This electrical signal degradation is the sum of conductor loss and dielectric loss. In particular, the dielectric loss due to the interlayer insulating material between the wiring circuits of the multilayer wiring board increases remarkably with the increase in the frequency of the electric signal used in the electronic device, and in the GHz band, the major deterioration of the electric signal is caused. It becomes a cause. For this reason, epoxy resins and polyimide resins that have been conventionally used as insulating materials for electronic devices such as multilayer wiring boards have problems with the electrical characteristics of dielectric constant and dielectric loss tangent, and it is difficult to support high-speed transmission. is there.

  The interlayer insulating material used for the multilayer wiring board is not only the problem in the high-speed transmission, but also warpage or the like caused by the difference in thermal expansion coefficient between the conductor layer of the multilayer wiring board and the silicon chip mounted on the multilayer wiring board. In order to reduce the problem of stress concentration, it is preferable that the thermal expansion coefficient is low. Further, in order to achieve the above high-density mounting, it is necessary to make the line width / line spacing of the electric signal circuit of the multilayer wiring board used for this, and when the line width / line spacing becomes about 5 μm / 5 μm, From the viewpoint of matching, the thickness of the interlayer insulating layer of the multilayer wiring board needs to be about several μm. Therefore, methods such as impregnating a glass cloth or aramid nonwoven fabric conventionally used for insulating materials with resin, and methods such as blending a silica filler of about several microns into a resin composition for insulating materials reduce the thermal expansion coefficient. It cannot cope with the thickness reduction of the insulating layer.

  On the other hand, polynorbornene, which is a cyclic olefin resin, shows a high heat-resistant resin having a glass transition temperature of about 300 ° C. due to its structure, and has a dielectric constant of 2.2 to 2.8 in the GHz band and a dielectric loss tangent. Is an influential resin that exhibits excellent electrical characteristics of 0.001 to 0.006 and can cope with the high-speed transmission. However, polynorbornene has a drawback that it has a higher thermal expansion coefficient than conventional epoxy resins and the like (depending on the type of the side chain functional group, about 70 to 140 ppm).

  Moreover, when manufacturing a resin composition by mixing a filler in a resin (see, for example, Patent Document 1), it is generally possible to nano-disperse a nano-sized filler having an average particle size of less than 1 μm in a resin. In particular, it is extremely difficult to disperse a silica filler having a high polarity at a nano-size level in a low dielectric constant resin having a low polarity.

  Recently, a system-in-package in which a semiconductor chip and a passive component are built in the multilayer wiring board has begun to attract attention. These packages also need to be speeded up, causing similar problems.

JP 11-43566 A

  The present invention has been made in view of the above-described problems, and is a multilayer wiring board including an insulating layer that is excellent in electrical characteristics and mechanical characteristics, and in particular has both a low dielectric constant and a low thermal expansion coefficient, and its manufacture. It aims to provide a method.

That is, the present invention
1. A cyclic olefin resin (A), an inorganic filler (B) having an average particle size of 800 nm or less, and a resin composition comprising the solvent (C) in which the cyclic olefin resin (A) is soluble, An insulating layer composed of a resin composition obtained by dispersing the inorganic filler (B) in advance in a solvent containing a solvent (C) in which the cyclic olefin resin (A) used in the resin composition is soluble. A multilayer wiring board characterized by comprising:
2. The multilayer wiring board according to item 1, wherein the cyclic olefin-based resin is polynorbornene.
3. The multilayer wiring board according to item 2, wherein the polynorbornene is a norbornene addition polymer,
4). The norbornene addition polymer has a structure represented by the following general formula (1), the multilayer wiring board according to item 3,

［式（１）中のＸは、−ＣＨ_２−、−ＣＨ_２ＣＨ_２−、または−Ｏ−を示し、Ｒ_１およびＲ_２はそれぞれ独立して水素原子、炭化水素基および極性基を示し、該極性基は、直鎖もしくは分岐したアルキル基、アルケニル基、アルキニル基、ビニル基、アリル基、アラルキル基、環状脂肪族基、アリール基およびエーテル基から選ばれた基を介して結合されていても良い。ｎは０から５の整数を示し、その繰り返しは異なっていても良い。］

[X in the formula (1) _{may, -CH 2 -, - CH 2} CH 2 -, or -O- are shown, each of _{R 1} and _{R 2} are independently a hydrogen atom, a hydrocarbon group and a polar group The polar group is bonded via a group selected from a linear or branched alkyl group, alkenyl group, alkynyl group, vinyl group, allyl group, aralkyl group, cycloaliphatic group, aryl group and ether group. May be. n represents an integer of 0 to 5, and the repetition thereof may be different. ]

5. The multilayer wiring board according to Item 3 or 4, wherein the norbornene addition polymer is an addition polymer of a norbornene monomer,
6). The multilayer wiring board according to any one of Items 1 to 5, wherein the inorganic filler (B) has a particle size of 100 nm or less,
7). The multilayer wiring board according to any one of Items 1 to 6, wherein the inorganic filler (B) is a silica filler,
8). The multilayer wiring board according to item 7, wherein the silica filler is surface-treated with a silane coupling agent.
9. The multilayer wiring board according to any one of Items 1 to 8, wherein the solvent for dispersing the inorganic filler (B) is the same as the solvent (C).
10. The multilayer wiring board according to any one of Items 1 to 9, wherein the multilayer wiring board includes a passive component.
11. The multilayer wiring board according to any one of Items 1 to 10, wherein the multilayer wiring board includes a power supply layer.
12 The multilayer wiring board according to Item 11, wherein the power supply layer has an insulating layer made of a high dielectric constant organic insulating material.
13. A cyclic olefin resin (A), an inorganic filler (B) having an average particle size of 800 nm or less, and a resin composition comprising the solvent (C) in which the cyclic olefin resin (A) is soluble, Insulating layer using a resin composition obtained by dispersing the inorganic filler (B) in advance in a solvent containing a solvent (C) in which the cyclic olefin resin (A) contained in the resin composition is soluble A method of manufacturing a multilayer wiring board, comprising: a step of forming a circuit layer; and a step of forming an opening in the insulating layer by laser irradiation;
14 The method for producing a multilayer wiring board according to item 13, wherein the step of forming the insulating layer is performed by applying the resin composition.
15. The method for producing a multilayer wiring board according to item 13, wherein the step of forming the insulating layer is performed by laminating films formed from the resin composition.
16. The method for producing a multilayer wiring board according to item 15, wherein the film is a film with a metal layer,
17. The method for producing a multilayer wiring board according to Item 16, wherein the metal layer is made of copper.
18. The method for producing a multilayer wiring board according to any one of items 13 to 17, comprising a step of heat-curing the insulating layer.
19. 19. The step of heating the insulating layer comprises semi-curing the insulating layer by heating, laminating one or more insulating layers on the insulating layer, and further curing by heating. Manufacturing method of multilayer wiring board,
20. Item 20. The method for producing a multilayer wiring board according to any one of Items 13 to 19, comprising a step of plasma-treating a surface of the insulating layer.
Is to provide.

  According to the present invention, the multilayer wiring board has excellent electrical characteristics and mechanical characteristics, and in particular, has an insulating layer that can achieve both a low dielectric constant and a low thermal expansion coefficient, and thus has excellent electrical characteristics and mechanical characteristics.

  The resin composition used for the multilayer wiring board of the present invention comprises a cyclic olefin resin (A), an inorganic filler (B) having an average particle size of 800 nm or less, and a solvent in which the cyclic olefin resin (A) is soluble ( A resin composition comprising C), wherein the inorganic filler (B) is previously dispersed in a solvent containing a solvent (C) in which the cyclic olefin resin (A) used in the resin composition is soluble. Thus, the nano-sized inorganic filler can be obtained by uniformly dispersing the resin in a resin composition containing a resin having excellent electrical characteristics without agglomeration. Since the insulating layer composed of such a resin composition is excellent in electrical characteristics and mechanical characteristics, and particularly has both a low dielectric constant and reliability, the multilayer wiring board of the present invention produced using the insulating layer is It has excellent electrical and mechanical properties.

  The cyclic olefin resin (A) used in the present invention is a solvent-soluble one. As these cyclic olefin resins, those known in JP-A-3-14882, JP-A-3-122137, JP-A-4-63807 and the like can be used. For example, the ring-opening weight of a norbornene monomer can be used. Examples thereof include a polymer, a hydrogenated product thereof, an addition polymer of a norbornene monomer, an addition polymer of a norbornene monomer and an olefin, and a modified product of these polymers. The cyclic olefin-based resin exhibits an excellent dielectric constant and dielectric loss tangent at a frequency in the GHz band, and in particular, the norbornene addition polymer also has excellent heat resistance. The main chain skeleton in the chemical structure of the norbornene addition polymer having a structure represented by) is suitable because it has a heat resistance with a glass transition temperature of about 300 ° C.

The norbornene addition polymer having a structure represented by the general formula (1), as X in the general formula (1), -О -, - CH ₂ - or _-CH 2 CH ₂ - has also In the general formula (1), R ₁ and R ₂ each independently have hydrogen, a hydrocarbon group or a polar group. Examples of the hydrocarbon group include an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an alkylidenyl group, an aryl group, and an aralkyl group. The polar group includes an alkyl group such as a methyl group and a phenyl group. Examples include silyl groups, alkoxy groups, alkoxysilyl groups, cyano groups, amide groups, imide groups, acryl groups, and epoxy groups, which may have a substituent such as an aromatic group. It may be bonded via a branched alkyl group, alkenyl group, alkynyl group, vinyl group, allyl group, aralkyl group, cycloaliphatic group, aryl group, ether group and ester group. Moreover, n in General formula (1) is an integer from 0 to 5, and the number of repeating units is preferably 10 to 10,000. The preferred molecular weight of the norbornene addition polymer is such that the number average molecular weight in terms of polystyrene measured by high performance liquid chromatography is 3,000 or more and less than 1,000,000. More preferably, it is 5,000 or more and less than 500,000.

  Examples of the alkyl group may have a side chain such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a hexyl group, and a decyl group (C1-C20). ) As the alkyl group and the cycloalkyl group, for example, a (C3-C15) cycloalkyl group such as a cyclohexyl group, a cyclopentyl group and a methylcyclohexyl group, and as the alkenyl group, for example, a (C3-C10) alkenyl group, the above-mentioned Examples of the alkynyl group include (C2-C20) alkynyl groups such as ethynyl group, propenyl group, hexenyl group, octenyl group, and heptenyl group. Examples of the alkylidenyl group include (C1-C6) alkylidenyl group and the aryl group. For example, phenyl, tolyl, naphth Examples of (C6-C40) aryl groups such as ruthenium group, benzyl group and phenylethynyl group, and the aralkyl group include (C7-C15) aralkyl group and the alkoxysilyl group include, for example, trimethoxysilyl group, Examples of the alkoxysilyl group such as ethoxysilyl group, triethoxysilyl group and triethoxysilylethyl group, and the ester group include, for example, methyl ester group, ethyl ester group, n-butyl ester group, t-butyl ester group and n- Examples of the ester group such as a propyl ester group and the (meth) acryl group include a (meth) acryl group such as a methacryloxymethyl group, and the epoxy group includes an epoxy group such as a glycidyl ether group.

  The norbornene addition polymer is preferably an addition polymer of a norbornene monomer, more preferably an addition polymer of a norbornene monomer represented by the general formula (2). The norbornene monomer may be used singly or in combination of two or more, and the addition copolymer using two or more may be a random addition copolymer or a block addition copolymer.

上記一般式（２）におけるＸ、Ｒ_１、Ｒ_２およびｎは、上記一般式（１）におけるものと同じである。

X, R ₁ , R ₂ and n in the general formula (2) are the same as those in the general formula (1).

一般式（３）におけるＲ_１、およびＲ_２として、具体的に以下に例示する。これらの官能基は、層間絶縁膜材料における特性をより好ましいものとすることができる。例えば、アルキル基を導入した場合、ポリノルボルネン樹脂フィルムとして可とう性に優れる。また、トリメトキシシリル基、またはトリエトキシシリル基を導入した場合、銅などの金属との密着性が向上する。トリエトキシシリル基、トリメトキシシリル基の割合が多い場合、ポリノルボルネンの誘電正接が大きくなる恐れがあるため、トリエトキシシリル基、および／またはトリメトキシシリル基を有するノルボルネンは、一般式（３）で表されるノルボルネン１分子において、２０ｍｏｌ％以下にすることが好ましい。さらに好ましくは１０ｍｏｌ％以下である。特に、一般式（３）において、ｎ−ブチルノルボルネン９０ｍｏｌ％とトリエトシキシシリルノルボルネン１０ｍｏｌ％からなるポリノルボルネン、未置換（置換基が水素原子）ノルボルネン９０ｍｏｌ％とトリエトシシリルノルボルネン１０ｍｏｌ％からなるポリノルボルネン、および未置換ノルボルネン７５ｍｏｌ％とｎ−ヘキシルノルボルネン２５ｍｏｌ％からなるポリノルボルネンが好ましい。なお、上記繰り返し単位はランダム配列であってもブロック配列であっても良い。 Specific examples of the norbornene addition polymer include those having a structure represented by the general formula (3),

Specific examples of R ₁ and R ₂ in formula (3) are given below. These functional groups can make the characteristics in the interlayer insulating film material more preferable. For example, when an alkyl group is introduced, the polynorbornene resin film is excellent in flexibility. Moreover, when a trimethoxysilyl group or a triethoxysilyl group is introduced, adhesion with a metal such as copper is improved. When the ratio of triethoxysilyl group and trimethoxysilyl group is large, the dielectric loss tangent of polynorbornene may be increased. Therefore, norbornene having a triethoxysilyl group and / or a trimethoxysilyl group has the general formula (3) In one molecule of norbornene represented by the formula, it is preferably 20 mol% or less. More preferably, it is 10 mol% or less. In particular, in the general formula (3), a polynorbornene composed of 90 mol% n-butylnorbornene and 10 mol% triethoxysilylnorbornene, a polynorbornene comprising 90 mol% unsubstituted (substituent is a hydrogen atom) norbornene and 10 mol% triethoxysilylnorbornene. Norbornene and polynorbornene consisting of 75 mol% unsubstituted norbornene and 25 mol% n-hexyl norbornene are preferred. The repeating unit may be a random array or a block array.

  The inorganic filler (B) used in the present invention has an average particle size of 800 nm or less. Examples of these inorganic fillers include silicates such as talc, fired clay, unfired clay, mica and glass, Oxides such as titanium oxide, alumina, silica and fused silica, carbonates such as calcium carbonate, magnesium carbonate and hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide and calcium hydroxide, barium sulfate and calcium sulfate And sulfates or sulfites such as calcium sulfite, zinc borate, barium metaborate, aluminum borate, borate salts such as calcium borate and sodium borate, nitrides such as aluminum nitride, boron nitride and silicon nitride, etc. Can be mentioned. Silica filler is more preferable from the viewpoint of dielectric constant. Examples of the silica filler include a silica filler synthesized by a sol-gel method, a silica filler synthesized by a gas phase method, a fused silica filler, and a crystalline silica filler. In particular, a silica filler synthesized by a gas phase method and a silica filler synthesized by a sol-gel method are preferable.

  In the present invention, the inorganic filler has an average particle size of 800 nm, preferably 600 nm or less, more preferably 100 nm or less, and still more preferably 50 nm or less. When the average particle size is larger than 800 nm, a thin interlayer insulating material of about several tens of μm cannot be smoothly formed. When the average particle size is larger than 100 nm, a thin film of interlayer insulating material of about several μm is formed smoothly. There is a fear that it cannot be done. Moreover, it is preferable that the lower limit of the average particle diameter of an inorganic filler is 1 nm. In this invention, a thermal expansion coefficient can be reduced by mix | blending these inorganic fillers.

  In this invention, as content of an inorganic filler (B), 5 to 200 weight part is preferable with respect to 100 weight part of said cyclic olefin resin (A). The added amount of the inorganic filler is preferably 5 parts by weight or more and 150 parts by weight or less, more preferably 5 parts by weight or more and 60 parts by weight or less. The content is preferably not less than the lower limit for reducing the coefficient of thermal expansion, and is preferably not more than the upper limit for maintaining a low dielectric constant and obtaining good film properties.

  The solvent (C) used in the present invention is not limited as long as it can dissolve the cyclic olefin-based resin. For example, an aliphatic hydrocarbon solvent, an aromatic hydrocarbon solvent, a ketone solvent, an ether solvent, Examples include ethyl acetate, ester-based, lactone-based, and amide-based solvents. Among them, aliphatic hydrocarbon-based solvents, aromatic hydrocarbon-based solvents, ketone-based solvents, and ether-based solvents are preferable. Examples of the hydrocarbon solvent include pentane, hexane, heptane, and cyclohexane. Examples of the aromatic solvent include benzene, toluene, xylene, and mesitylene. Examples of the ketone solvent include Examples thereof include methyl ethyl ketone and cyclohexanone, and examples of the ether solvent include diethyl ether and tetrahydrofuran. These solvents can be used alone or in combination. Of these, 1,3,5-trimethylbenzene is particularly preferable.

  Examples of the silane coupling agent used in the present invention include all silane compounds having an alkoxysilyl group and an organic functional group such as an alkyl group, an epoxy group, a vinyl group, and a phenyl group in one molecule. For example, ethyltriethoxy Silanes, silanes having alkyl groups such as propyltriethoxysilane, butyltriethoxysilane, etc., silanes having phenyl groups such as phenyltriethoxysilane, benzyltriethoxysilane, phenethyltriethoxysilane, butenyltriethoxysilane, propenyltriethoxy Silane, silane having vinyl group such as vinyltrimethoxysilane, silane having methacrylic group such as γ- (methacryloxypropyl) trimethoxysilane, γ-aminopropyltriethoxysilane, N-β (aminoethyl) -γ- Aminop Silanes having amino groups such as pyrtrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxy Examples include, but are not limited to, silanes having an epoxy group such as (cyclohexyl) ethyltrimethoxysilane, and silanes having a mercapto group such as γ-mercaptopropyltrimethoxysilane. These may be used alone or in combination.

  In the present invention, the inorganic filler (B) is previously contained in a solvent containing a solvent (C) in which the cyclic olefin resin (A) contained in the resin composition of the present invention is soluble, or with the solvent (C). The solvent in which the inorganic filler is dispersed is used by being dispersed in the same solvent. As a method of dispersing the inorganic filler in the solvent, the solvent and the inorganic filler are added to the mixer, and more preferably, the silane coupling agent is added, the ultrasonic dispersion method, the high-pressure collision dispersion method, the high-speed rotation. Examples of the dispersion method include a dispersion method such as a dispersion method, a bead mill method, a high-speed shear dispersion method, and a rotation and revolution dispersion method.

In the dispersion of the inorganic filler, the proportion of the inorganic filler in the solvent is preferably 5 to 60% by weight of the total weight of the inorganic filler solution. If it is less than 5% by weight, the viscosity of the inorganic filler solution may be low and the inorganic filler may be easily precipitated, and if it exceeds 60% by weight, the viscosity of the inorganic filler solution may be increased and handling may be difficult. .
As addition amount of a silane coupling agent, 0.01-30 weight part is preferable with respect to 100 weight part of inorganic fillers, More preferably, it is 0.01-10 weight part, More preferably, it is 0.01-5.0 weight%. Is preferred.

  In the present invention, by dispersing the inorganic filler in the solvent in advance, it becomes possible to completely disperse the inorganic filler in the resin, reducing the thermal expansion coefficient of the insulating resin composition, and insulating resin composition. It is possible to improve the mechanical strength and to homogenize the insulating resin composition film, and to improve the reliability of the multilayer wiring board including the insulating layer composed of the resin composition.

In addition to the above components, the resin composition used for the multilayer wiring board of the present invention includes a thermoplastic resin, a thermosetting resin, a compatibilizer, a leveling agent, an antifoaming agent, a surfactant, and an organic filler. Additives such as light and / or thermosetting agents, initiators, UV absorbers, light stabilizers and antioxidants can be added. These additives can be used alone or in admixture of two or more. Although there is no restriction | limiting in particular as addition amount of the said additive, Each 0.01 weight part-200 weight part is preferable with respect to 100 weight part of cyclic olefin resin, More preferably, it is 0.01-100 weight part More preferably, it is 0.01 to 50 parts by weight.
In particular, by adding light and / or a thermosetting agent, the epoxy group of the cyclic olefin resin side chain and the functional group of the double bond site can be easily reacted and cross-linked by light irradiation and / or heating. , Heat resistance is improved.

  As a method for producing a resin composition used for the multilayer wiring board of the present invention, an inorganic filler solution in which an inorganic filler (B) is previously dispersed in a solvent and a cyclic olefin-based resin (A) are ultrasonicated. Examples of the dispersion method include a dispersion method, a high-pressure collision dispersion method, a high-speed rotation dispersion method, a bead mill method, a high-speed shear dispersion method, and a rotation and revolution dispersion method. At this time, a solvent (C) in which the cyclic olefin-based resin (A) other than the solvent used in the inorganic filler solution is soluble may be added to the resin composition as long as the characteristics of the resin composition are not impaired.

  Hereinafter, the multilayer wiring board of the present invention will be specifically described with reference to the drawings, but the present invention is not limited thereto.

  FIG. 1 is a view for explaining an example of a method for manufacturing a multilayer wiring board according to an embodiment of the present invention, and FIG. 1D is a cross-sectional view showing the structure of the resulting multilayer wiring board.

  First, as a core substrate, a FR-4 double-sided metal foil (copper foil) insulating substrate 103 is provided with a drilling machine to provide a hole 102, and then the hole 102 is plated by electroless plating. Conducting is performed between the metal foils on both sides of the insulating substrate, and then the metal foil is etched to form the conductor circuit layer 101 (FIG. 1A). The material of the conductor circuit layer 101 may be any material as long as it is suitable for this manufacturing method, but is preferably removable by a method such as etching or peeling in the formation of the conductor circuit. Are preferably resistant to the chemicals used in this. Examples of the material of the conductor circuit layer 101 include copper, copper alloy, 42 alloy, nickel, and the like. In particular, the copper foil, the copper plate, and the copper alloy plate are preferable for use as the conductor circuit layer 101 because not only electrolytic plated products and rolled products can be selected, but also various thicknesses can be easily obtained.

  Next, the insulating layer 104 is formed on the conductor circuit layer 101 using the resin composition, and the insulating layer is cured by heating (FIG. 1B). Examples of the method for forming the insulating layer 104 include a coating method and a film lamination method. Examples of the coating method include a curtain coater, a bar coater, a comma coater, a knife coater, a gravure coater, a die coater, a spin coater, a printing machine, and a vacuum printing. Using an apparatus such as a machine and a dispenser, the resin composition is applied to the surface on which the insulating layer is formed to form a coating film, and the coating film is dried using a dryer, a nitrogen dryer, a vacuum dryer, or the like. And a method of forming an insulating layer by drying and curing. As the film lamination method, a coating film is formed in the same manner as described above on a substrate such as a polyester film using the resin composition, and this is dried to form a film with a supporting substrate (insulating film). A method of forming an insulating layer by laminating a film using a vacuum press, a normal pressure laminator, a vacuum laminator, a Becquerel type laminating apparatus, etc. on the surface on which the insulating layer is formed is prepared. In place of a resin base material such as a polyester film, an insulating film is formed on the metal base material in the same manner as described above to produce a film with a metal layer (insulating film), and this is laminated to form an insulating layer. The method etc. are mentioned. In the film with a metal layer, the metal layer can be processed as a conductor circuit.

The temperature in the heat curing of the insulating layer is preferably in the range of 150 ° C to 300 ° C. In particular, 150-250 degreeC is preferable. Further, in the case of further laminating one or more insulating layers on the first insulating layer, the first insulating layer is heated and semi-cured, and the first insulating layer is formed on the insulating layer. By forming a plurality of insulating layers and heat-curing the semi-cured insulating layer again to such an extent that there is no practical problem, the adhesion between the insulating layer and between the insulating layer and the conductor circuit can be improved. In this case, the semi-curing temperature is preferably 150 ° C to 250 ° C, more preferably 150 ° C to 200 ° C.
In addition, after the insulating layer is formed, the adhesion between the insulating layer and between the insulating layer and the conductor circuit can be improved by performing plasma treatment to the extent that the surface of the insulating layer is uneven. Examples of the plasma treatment include plasma treatment using a gas such as oxygen, argon, nitrogen, carbon dioxide, fluorine, carbon fluoride, and a mixed gas obtained by mixing two or more types of carbon tetrachloride. Further, the plasma treatment may be performed a plurality of times.

Next, the insulating layer 104 is irradiated with a laser to form a via hole 105 (FIG. 1C). As the laser, an excimer laser, a UV laser, a carbon dioxide gas laser, or the like can be used. When a via hole is opened by the laser, a fine via hole can be easily formed regardless of whether the material of the insulating layer is photosensitive or non-photosensitive. Since it can be formed, it is particularly preferable when microfabrication is required. As a method for forming the via hole 105, dry etching, chemical etching, or the like using a laser or plasma can be used in addition to the above laser irradiation method. In the case where the insulating layer 104 is made of a photosensitive resin, the via hole 105 can be formed by selectively exposing and developing the insulating layer 104.
Next, the second conductor circuit layer 106 is formed (FIG. 1D). The second conductor circuit layer 106 can be formed by a known method such as a semi-additive method. A multilayer wiring board can be manufactured by these methods.

The multilayer wiring board of the present invention can incorporate passive components and power supply layers.
As a passive component, an inductor, a resistor, a capacitor, etc. formed on a silicon wafer can be incorporated.
The power supply layer can be manufactured using a high dielectric material such as a high dielectric constant inorganic insulating material or a high dielectric constant organic insulating material, but a high dielectric constant organic insulating material that can form a power supply layer at a lower temperature is used. preferable.

As a method of incorporating the power supply layer in the multilayer wiring board of the present invention, for example, an insulating layer made of a high dielectric constant organic interlayer insulating material is formed on the conductor circuit layer 101 of the power supply layer forming portion in the wiring formation double-sided substrate 107. The via hole is formed, the second conductor circuit layer 106 is formed, and the power supply layer is formed. Furthermore, an insulating layer is formed on the second conductor circuit layer using the above resin composition, a via hole is formed, and a third conductor circuit layer is formed thereon, or these steps are performed. It can be built in by repeating.
As a method for embedding passive components in the multilayer wiring board of the present invention, a passive component chip is mounted on the wiring-formed double-sided substrate 107, and sealing is performed by embedding passive components with the resin composition or an insulating sealing resin. By forming a via hole penetrating the sealing material on the electrode of the passive component chip, the connection between the terminals can be established.

  In the multilayer wiring board of the present invention, examples of the high dielectric constant organic insulating material used for the power supply layer include a resin composition containing a binder resin and a high dielectric. As the binder resin, a thermosetting resin is preferably used. For example, a phenolic novolak resin, a cresol novolak resin, a bisphenol A novolak resin or other novolac type phenol resin, and a resol type phenol resin or the like phenol resin; Bisphenol type epoxy resins such as epoxy resins and bisphenol F epoxy resins; novolac type epoxy resins such as novolak epoxy resins and cresol novolak epoxy resins; epoxies such as biphenyl type epoxy resins, diphenyl ether type epoxy resins and bisphenol A-epichlorohydrin type epoxy resins Resins; Resins having triazine rings such as urea (urea) resins, melamine resins, unsaturated polyester resins, bismaleimide trees , Polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins, resins having a methacryloyl group. Among these, it is preferable to use thermosetting resins such as epoxy resins and phenol resins as a main component. The binder resin may be the polynorbornene.

  Examples of the high dielectric material include metal oxide powders such as barium titanate, zinc titanate, strontium titanate, bismuth titanate, magnesium titanate, neodymium titanate and calcium titanate, gold, silver, copper, Metal powder such as tin, platinum, palladium, ruthenium, iron, nickel, cobalt, germanium, silicon, zinc, titanium, magnesium and aluminum, acetylene black, ketjen black, furnace black, carbon black, artificial graphite, natural graphite and Examples thereof include carbon material powders such as fullerenes.

  The high-dielectric-constant organic insulating material can be obtained by mixing the above-mentioned components. In addition to the above-described components, the high-dielectric-constant organic insulating material has surface smoothness when a curing agent, curing accelerator, diluent, and high-dielectric-constant insulating resin layer are produced. You may add additives, such as a leveling agent for improving, the dispersing agent for improving the dispersibility of a high dielectric material, and the elastomer for improving a flexibility.

  Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.

Example 1
[Preparation of Resin Composition 1]
18 g of polynorbornene comprising 90 mol% of n-butylnorbornene and 10 mol% of triethoxysilylnorbornene obtained by a known method described in US Pat. No. 5,468,819 is converted into 1,3,5-trimethylbenzene. A cyclic olefin-based resin solution (Promerus Co., Ltd.) dissolved in 72 g, silica filler 2 g (average particle size 20 to 30 nm, manufactured by C-I Kasei Co., Ltd.) synthesized in advance by a gas phase method, A silica filler solution obtained by mixing and dispersing 18 g of 5-trimethylbenzene with a high-speed shearing dispersion type mixer (manufactured by Nara Machinery Co., Ltd., Micros MICROS-0 type) is mixed in the same mixer as described above. A resin composition 1 was obtained.

[Production and Evaluation of Resin Composition Film 1]
On the copper foil (Mitsui Metals Co., Ltd., trade name: 3EC-VLP) having a thickness of 70 μm, the resin composition 1 obtained as described above was applied using an applicator, and in a dryer, 80 ° C./10 After drying under the conditions of 140 ° C./10 minutes for 1 minute, heat treatment was performed at 220 ° C./1 hour in a dryer in a nitrogen atmosphere to obtain one resin composition layer with a copper foil having a resin layer thickness of 7 μm. When the cross section of the resin layer in the obtained resin composition with a copper foil was observed with a scanning electron microscope (SEM) and the dispersibility of the silica filler was evaluated, aggregates of 1 μm or more of the silica filler were observed. Was not.

  Furthermore, the 70-micrometer-thick copper foil in 1 layer of resin compositions with copper foil was removed by etching, and the resin composition film 1 was obtained. When the dielectric constant and dielectric loss tangent of the obtained film at 10 GHz were measured, the dielectric constant was 2.4 and the dielectric loss tangent was 0.005. The measurement was performed by a perturbation method using a cylindrical cavity resonator with a microwave network analyzer HP8510B (manufactured by Agilent Technologies) measuring device. Further, the thermal expansion coefficient of the resin composition film 1 was measured using a thermal stress strain measuring device (TMA / SS120C: manufactured by Seiko Denshi Kogyo Co., Ltd.) under conditions of a heating rate of 10 ° C./min and a load of 3 g. The average coefficient of thermal expansion of -65 ° C to 150 ° C was found to be 110 ppm.

[Production of multilayer wiring boards]
After a hole is drilled in an insulating substrate with double-sided copper foil equivalent to FR-5 by a known method by a drilling machine, conduction between the upper and lower copper foils is achieved by electroless plating, and the circuit layers are formed on both sides by etching the copper foil on both sides. (Wiring formation double-sided substrate 107). Next, the resin composition 1 was applied onto the double-sided circuit layer by a spin coater and dried to form an insulating layer (104) having a thickness of 10 μm. This was heat-treated at 200 ° C. for 2 hours in a nitrogen atmosphere drier to cure the insulating layer. Next, a via hole (via hole 105) having a via top diameter of 50 μm was formed in the insulating layer with a UV-YAG laser, and the via hole was washed with a permanganate desmear solution. Next, a mask for forming a circuit is provided at a position where the second conductor circuit layer is formed in the insulating layer, and a copper circuit layer (line width / line width = 15 μm / 15 μm) is formed by electroless plating and electrolytic plating. The second conductor circuit layer) was formed to obtain a multilayer wiring board.
About the multilayer wiring board obtained above, the temperature cycle test of -55 degreeC-125 degreeC was done, the surface and cross section observation of the multilayer wiring board were performed, and the presence or absence of the resin crack of an insulating layer was evaluated. As a result, no resin crack occurred in the insulating layer.

(Example 2)
[Preparation of Resin Composition 2]
In Example 1, instead of the addition polymerization type cyclic olefin resin 18g consisting of 90 mol% of n-butylnorbornene and 10 mol% of triethoxysilylnorbornene, addition polymerization type consisting of 25 mol% of n-hexylnorbornene and 75 mol% of norbornene is used. A resin composition 3 was obtained in the same manner as in Example 1 except that 18 g of the cyclic olefin resin was used.

[Production and Evaluation of Resin Composition 2 Film and Production and Evaluation of Multilayer Wiring Board 2]
In Example 1, the resin composition 2 film was produced and evaluated in the same manner as in Example 1 except that the resin composition 2 obtained above was used instead of the resin composition 1. In the cross-sectional observation of the resin layer, no aggregate of silica filler was observed, the dielectric constant was 2.4, the dielectric loss tangent was 0.005, and the thermal expansion coefficient was 85 ppm. Similarly, the multilayer wiring board 2 was produced and subjected to a temperature cycle test. As a result, no resin cracks were generated in the insulating layer.

(Example 3)
[Preparation of Resin Composition 3]
In Example 1, instead of 18 g of the addition polymerization type cyclic olefin resin consisting of 90 mol% of n-butylnorbornene and 10 mol% of triethoxysilylnorbornene, addition of 70 mol% of n-decylnorbornene and 30 mol% of methyl glycidyl ether norbornene. Resin composition 3 was prepared in the same manner as in Example 1, except that 18 g of a polymerizable cyclic olefin resin was used and 0.36 g of a photoinitiator (trade name Rhodosil Photoinitiator 2074, manufactured by Rhodia Japan KK) was further added. Got.

[Production and Evaluation of Resin Composition 3 Film and Production and Evaluation of Multilayer Wiring Board 3]
In Example 1, a resin composition 3 film was produced and evaluated in the same manner as in Example 1 except that the resin composition 3 obtained above was used instead of the resin composition 1. In the cross-sectional observation of the resin layer, no aggregate of silica filler was observed, the dielectric constant was 2.4, the dielectric loss tangent was 0.006, and the thermal expansion coefficient was 150 ppm. Similarly, the multilayer wiring board 3 was produced and subjected to a temperature cycle test. As a result, no resin crack was generated in the insulating layer.

Example 4
[Preparation of Resin Composition 4]
In Example 1, instead of 18 g of the addition polymerization type cyclic olefin resin consisting of 90 mol% of n-butylnorbornene and 10 mol% of triethoxysilylnorbornene, addition of 70 mol% of n-decylnorbornene and 30 mol% of methyl glycidyl ether norbornene. 18 g of polymerization type cyclic olefin resin is used, and silica filler having an average particle size of 500 to 600 nm (Admatechs Co., Ltd.) is used instead of 2 g of silica filler (average particle size of 20 to 30 nm, manufactured by C-I Kasei Co., Ltd.). The resin composition 4 was prepared in the same manner as in Example 1 except that 2 g of a photoinitiator (manufactured by Rhodia Japan Co., Ltd., trade name Rhodosil Photoinitiator 2074) was added. Obtained.

[Production and Evaluation of Resin Composition 4 Film and Production and Evaluation of Multilayer Wiring Board 4]
In Example 1, the resin composition 4 film was produced and evaluated in the same manner as in Example 1 except that the resin composition 4 obtained above was used instead of the resin composition 1. In the cross-sectional observation of the resin layer, silica filler aggregates were not observed, the dielectric constant was 2.4, the dielectric loss tangent was 0.005, and the thermal expansion coefficient was 180 ppm. Similarly, the multilayer wiring board 4 was produced and subjected to a temperature cycle test. As a result, no resin cracks were generated in the insulating layer.

(Example 5)
[Preparation of Resin Composition 5]
In Example 1, instead of 18 g of the addition polymerization type cyclic olefin resin consisting of 90 mol% of n-butylnorbornene and 10 mol% of triethoxysilylnorbornene, addition of 70 mol% of n-decylnorbornene and 30 mol% of methyl glycidyl ether norbornene. Using 18 g of a polymerized cyclic olefin resin, instead of 2 g of silica filler (average particle size 20-30 nm, manufactured by CI Kasei Co., Ltd.), silica filler with an average particle size of 200 nm (manufactured by Admatechs Corporation) Resin composition 5 was obtained in the same manner as in Example 1 except that 2 g of trade name SO-C1) was used and 0.36 g of photoinitiator (Rhodiail Photoinitiator 2074) manufactured by Rhodia Japan KK was added. .

[Production and Evaluation of Resin Composition 5 Film and Production and Evaluation of Multilayer Wiring Board 5]
In Example 1, a resin composition 5 film was produced and evaluated in the same manner as in Example 1 except that the resin composition 5 obtained above was used instead of the resin composition 1. In the cross-sectional observation of the resin layer, no aggregate of silica filler was observed, the dielectric constant was 2.4, the dielectric loss tangent was 0.005, and the thermal expansion coefficient was 170 ppm. Similarly, the multilayer wiring board 5 was produced and subjected to a temperature cycle test. As a result, no resin crack was generated in the insulating layer.

(Example 6)
[Preparation of Resin Composition 6]
In Example 5, except that 0.1 g of β (3,4 epoxy cyclohexyl) ethyltrimethoxysilane (manufactured by Nihon Unicar Co., Ltd., trade name A-186) was added during the preparation of the silica filler solution. Resin composition 6 was obtained in the same manner as in Example 5.

[Production and Evaluation of Multilayer Wiring Board 6]
In Example 1, a multilayer wiring board 6 was obtained in the same manner as in Example 1 except that the resin composition 6 obtained above was used instead of the resin composition 1. As a result of the temperature cycle test, no resin crack was generated in the insulating layer.

(Comparative Example 1)
[Preparation of Resin Composition 7]
A polynorbornene solution obtained by dissolving 18 g of polynorbornene composed of 90 mol% of n-butylnorbornene and 10 mol% of triethoxysilylnorbornene in 72 g of 1,3,5-trimethylbenzene, and 2 g of silica filler synthesized by a gas phase method (average particle size) A resin composition obtained by mixing 20 to 30 nm in diameter, manufactured by C.I. Kasei Co., Ltd.) and 18 g of 1,3,5-trimethylbenzene using a vacuum planetary motion stirrer (Kentaro Awatori, manufactured by EME Co., Ltd.). 7 was obtained.

[Production and Evaluation of Resin Composition 7 Film and Production and Evaluation of Multilayer Wiring Board 7]
In Example 1, a resin composition 7 film was produced and evaluated in the same manner as in Example 1 except that the resin composition 7 obtained above was used instead of the resin composition 1. In the cross-sectional observation of the resin layer, an aggregate of 1 μm or more of silica filler was observed, the dielectric constant was 2.4, the dielectric loss tangent was 0.0055, and the thermal expansion coefficient was 130 ppm. Similarly, a multilayer wiring board 7 was produced and subjected to a temperature cycle test. As a result, the occurrence of resin cracks in the insulating layer was observed.

  According to the present invention, it is possible to obtain a multilayer wiring board including an insulating layer that is excellent in electrical characteristics and mechanical characteristics, and particularly has both a low dielectric constant and a low thermal expansion coefficient. Applicable to.

It is sectional drawing for demonstrating the multilayer wiring board of this invention, and its manufacturing method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Conductor circuit layer 102 Opening part 103 Insulating substrate 104 Insulating layer 105 Via hole 106 2nd conductor circuit layer 107 Wiring formation double-sided board

Claims (20)

A cyclic olefin resin (A), an inorganic filler (B) having an average particle size of 800 nm or less, and a resin composition comprising the solvent (C) in which the cyclic olefin resin (A) is soluble, An insulating layer composed of a resin composition obtained by dispersing the inorganic filler (B) in advance in a solvent containing a solvent (C) in which the cyclic olefin resin (A) used in the resin composition is soluble. A multilayer wiring board comprising: The multilayer wiring board according to claim 1, wherein the cyclic olefin-based resin is polynorbornene. The multilayer wiring board according to claim 2, wherein the polynorbornene is a norbornene addition polymer. The multilayer wiring board according to claim 3, wherein the norbornene addition polymer has a structure represented by the following general formula (1).

[X in the formula (1) _{may, -CH 2 -, - CH 2} CH 2 -, or -O- are shown, each of _{R 1} and _{R 2} are independently a hydrogen atom, a hydrocarbon group and a polar group The polar group is bonded via a group selected from a linear or branched alkyl group, alkenyl group, alkynyl group, vinyl group, allyl group, aralkyl group, cycloaliphatic group, aryl group and ether group. May be. n represents an integer of 0 to 5, and the repetition thereof may be different. ] The multilayer wiring board according to claim 3 or 4, wherein the norbornene addition polymer is an addition polymer of a norbornene monomer. The multilayer wiring board according to claim 1, wherein the inorganic filler (B) has a particle size of 100 nm or less. The multilayer wiring board according to claim 1, wherein the inorganic filler (B) is a silica filler. The multilayer wiring board according to claim 7, wherein the silica filler is surface-treated with a silane coupling agent. The multilayer wiring board according to claim 1, wherein the solvent in which the inorganic filler (B) is dispersed is the same as the solvent (C). The multilayer wiring board according to claim 1, wherein the multilayer wiring board includes a passive component. The multilayer wiring board according to claim 1, wherein the multilayer wiring board includes a power supply layer. The multilayer wiring board according to claim 11, wherein the power supply layer has an insulating layer made of a high dielectric constant organic insulating material. A cyclic olefin resin (A), an inorganic filler (B) having an average particle size of 800 nm or less, and a resin composition comprising the solvent (C) in which the cyclic olefin resin (A) is soluble, Insulating layer using a resin composition obtained by dispersing the inorganic filler (B) in advance in a solvent containing a solvent (C) in which the cyclic olefin resin (A) contained in the resin composition is soluble A method for manufacturing a multilayer wiring board, comprising: a step of forming a circuit layer; a step of forming a circuit layer; and a step of forming an opening in the insulating layer by laser irradiation. The method for producing a multilayer wiring board according to claim 13, wherein the step of forming the insulating layer is performed by applying the resin composition. The method for producing a multilayer wiring board according to claim 13, wherein the step of forming the insulating layer is performed by laminating films formed from the resin composition. The method for producing a multilayer wiring board according to claim 15, wherein the film is a film with a metal layer. The method for manufacturing a multilayer wiring board according to claim 16, wherein the metal layer is made of copper. The manufacturing method of the multilayer wiring board in any one of Claims 13-17 including the process of heat-hardening the said insulating layer. The step of heating the insulating layer comprises semi-curing the insulating layer by heating, laminating one or more insulating layers on the insulating layer, and further curing by heating. A method of manufacturing a multilayer wiring board. The manufacturing method of the multilayer wiring board in any one of Claims 13-19 including the process of plasma-treating the surface of the said insulating layer.

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