JP2006080322A - Chip type compound electronic part - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize high density mounting for improving compatibility precision by forming a thin-film thermistor element and a thin-film resistance element on one insulating substrate, adjusting a resistance value by a method of trimming etc. in advance, and forming a bump on the electrode surface of the terminal of the respective elements. <P>SOLUTION: The thin-film thermistor element consists of a pair of first metal underlying layers formed opposing each other on one ceramic substrate 1, an insulating coat 3 formed on the ceramic substrate between the first metal underlying layers; a pair of electrode films 4 formed on a part of the insulating coat and the first metal underlying layers, a thermistor thin-film 5 consisting of metal oxide formed so as to cover a part of a pair of electrode films on the insulating coat, and a protection coat and a glass layer 8 covering the thermistor thin-film. The thin-film resistance element consists of a resistance thin-film 7 consisting of an Ni-Cr-based alloy formed on the ceramic substrate adjacent to the thin-film thermistor element, a protection coat 6 for protecting a part of the resistance thin film, and a glass layer 8. A bump is formed through a metal film on a second metal underlying formed on the ceramic substrate covering a part of the pair of exposed electrode films of both of the ends of the thin-film thermistor element and on the exposed resistance thin-film of both of the ends of the thin-film resistance element. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention comprises a chip-type composite electronic component composed of a thermistor thin film element and a resistance thin film element used in a temperature compensation circuit, temperature detection circuit, temperature correction circuit, etc. of various electronic devices, or two thin film thermistor elements having different resistance temperature characteristics. More specifically, the chip type composite electronic component is suitable for surface mounting in which the thin film thermistor element and the thin film resistor element or two thin film thermistor elements having different resistance temperature characteristics are formed on one ceramic substrate. This relates to the external electrode structure.

  Conventionally, a temperature compensation circuit, a temperature detection circuit, a temperature correction circuit, and the like used in various electronic devices are configured by combining a thermistor element and a resistance element. As the thermistor element used in such a circuit, a surface mount type chip thermistor is generally used, and as the resistance element, a surface mount type resistor is generally used. Each of these is soldered to a wiring pattern on a circuit board as a single component to constitute a circuit.

  However, the circuit configuration as described above generally has the following problems. That is, when a thermistor element and a resistance element are combined as individual components as a linearization circuit, the resistance value of the resistance element, which is an important element, is selected from commercially available products, and it is difficult to obtain good linearization characteristics. In addition, there is a disadvantage that compatibility accuracy is deteriorated due to variations in resistance values of commercially available resistance elements.

  In addition, in order to increase compatibility accuracy, it is necessary to adjust the variation by adjusting the resistance elements in series or parallel, or to select the combination of resistance elements and thermistor elements by re-selecting the resistance elements. There are disadvantages such as an increase in cost due to an increase in time and the number of parts.

  Furthermore, when thermistor elements and resistive elements are combined with discrete components with terminals, a large area on the printed circuit board is used, and it is difficult to reduce the circuit area by reducing the mounting area and increasing the mounting density. It became a factor of the rise.

  Further, when temperature compensation is performed over a wide range of temperatures, it is necessary to separately prepare a thermistor element that compensates for a high temperature region and a thermistor element that compensates for a low temperature region.

  The present invention has been made to solve the above-described problems. A thin film thermistor element and a thin film resistance element or two thin film thermistor elements having different resistance temperature characteristics are formed on a single ceramic substrate, By adjusting the resistance value by trimming and other methods, and by forming bumps on the electrode surfaces that serve as the terminals of each element, it is possible to provide a chip-type composite component that enables high-density mounting and high compatibility accuracy. It is the purpose.

  The present invention has been made to achieve the above object, and the invention of claim 1 is directed to a chip type composite electronic component in which a thin film thermistor element and a thin film resistor element are formed on a single ceramic substrate. A pair of first metal underlayers on which the thermistor element is formed facing one ceramic substrate; an insulating film formed on the ceramic substrate between the first metal underlayers; and a portion of the insulating film; A pair of electrode films formed on the first metal base layer, a thermistor thin film made of a metal oxide formed so as to cover a part of the pair of electrode films on the insulating film, and the thermistor thin film A resistance layer comprising a Ni—Cr alloy formed on the ceramic substrate adjacent to the thin film thermistor element. A thin film, a protective film for protecting a part of the resistive thin film, and a glass layer are formed on the ceramic substrate so as to cover a part of the exposed pair of electrode films at both ends of the thin film thermistor element. The chip-type composite electronic component is characterized in that bumps are formed on the second metal underlayer and on the resistive thin film exposed at both ends of the thin film resistive element via a metal film.

  According to a second aspect of the present invention, in a chip-type composite electronic component in which two thin film thermistor elements are formed on one ceramic substrate, each thin film thermistor element is formed to face the ceramic substrate. A pair of first metal underlayers, an insulating film formed on the ceramic substrate between the first metal underlayers, a part of the insulating film and a pair of electrode films formed on the first metal underlayer And a thermistor thin film made of a metal oxide film formed so as to cover a part of the pair of electrode films on the insulating film, and a protective film and a glass layer covering the thermistor thin film, Bumps are formed on the second metal base layer formed on the ceramic substrate so as to cover a part of the pair of exposed electrode films at both ends of the thin film thermistor element, with the metal film interposed therebetween. It is a chip type composite electronic component characterized by that.

  The invention according to claim 3 of the present invention is the chip type composite electronic component according to claim 2, wherein the two thin film thermistor elements are composed of thermistor thin films having different resistance temperature characteristics. .

  According to a fourth aspect of the present invention, there is provided a silicon dioxide (SiO 2) film having a thickness of 0.1 μm to 1.0 μm of an insulating film formed between a pair of first metal base layers on the ceramic substrate in the thin film thermistor element. The chip-type composite electronic component according to claim 1, wherein the chip-type composite electronic component is made of silicon nitride (Si 3 N 4).

  According to a fifth aspect of the present invention, the protective film covering the thermistor thin film and / or the resistive thin film is made of silicon dioxide (SiO2) or silicon nitride (Si3N4). This is a chip-type composite electronic component.

  The invention according to claim 6 of the present invention is the chip-type composite electronic component according to claim 1, wherein the glass layer is made of a borosilicate glass-based oxide.

  The invention according to claim 7 of the present invention is the chip-type composite electronic component according to claim 1 or 2, characterized in that the metal film is composed of two layers of a contact layer and a bonding layer.

  The invention according to claim 8 of the present invention is characterized in that the contact layer is made of Ni (nickel), Cu (copper) or an alloy containing any of these, and the bonding layer is made of Au (gold). A chip-type composite electronic component according to claim 7.

  The invention according to claim 9 of the present invention is characterized in that the bump is made of Sn (tin), Ag (silver), Cu (copper) or an alloy containing any of these. This is a chip-type composite electronic component.

  The invention according to claim 10 of the present invention is that the first metal underlayer and the second metal underlayer are Ti (titanium), Cr (chromium), Cu (copper), Ag (silver) or any one of them. 5. The chip-type composite electronic component according to claim 1, wherein the chip-type composite electronic component is made of an alloy containing the same.

  A thin film thermistor element and a thin film resistor element can be formed on a single ceramic substrate at the same time, and the resistance value of the thin film resistor element can be trimmed and adjusted arbitrarily, facilitating linearization characteristics with excellent compatibility accuracy. Can get to. In addition, a chip-type composite electronic component composed of the best combination of a thin film thermistor element and a thin film resistor element can be achieved with a single chip and can be manufactured by a thin film technology. In addition, thin film thermistor elements and thin film resistor elements are mounted on a single ceramic substrate, and bumps suitable for bonding to the circuit board are provided, so surface mounting is not required for complicated positioning operations. Can do. In addition, since the glass layer is formed on the surface portions of the thin film thermistor element and the thin film resistor element, it is possible to provide a component that is less affected by moisture resistance and the surrounding environment and has excellent reliability. Also, by providing a metal film composed of a contact layer and a bonding layer between the electrode film and the bump, the bonding strength between the electrode film and the bump can be increased, and the reliability of the electrical connection and the bonded portion can be improved. it can. In addition, by using a structure in which two thin film thermistor elements with different resistance temperature characteristics are formed on one ceramic substrate, the combined resistance temperature characteristics can be linearized with a single chip component, and a temperature that can cover a wide temperature range. There is an advantage that it can be used as a sensor.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 is a perspective view showing an appearance of a chip-type composite electronic component of the present invention in which a thin film thermistor element and a thin film resistor element are formed on one ceramic substrate. In FIG. 1, in order to make the internal structure easy to see, a part of the thin film constituting the present invention is omitted. 2A to 2G are cross-sectional views for explaining a manufacturing process of a thin film thermistor element portion of the chip-type composite electronic component. 3A to 3E are cross-sectional views for explaining the manufacturing process of the thin film resistance element portion of the chip-type composite electronic component. 1 is a sectional view of the thin film thermistor element corresponding to FIG. 2G, and the sectional view taken along the line BB of FIG. 1 is a thin film corresponding to FIG. 3E. It is sectional drawing of a resistive element. The thin film thermistor element and thin film resistor element of the chip-type composite electronic component of the present invention are manufactured through the following steps. For convenience of explanation, the middle part of manufacturing and the final component will be described using the same reference numerals.

  First, as shown in FIG. 2A, a pair of first metal underlayers 2a are formed on the main surface of a ceramic substrate 1 made of ceramics such as alumina, quartz, mullite, steatite, Ti, Cr, Cu, Ti- A metal material such as Cu, W, or Ni is pattern-formed on the ceramic substrate 1 using a known means such as sputtering.

  Next, an insulating coating 3 made of silicon dioxide (SiO 2) or silicon nitride (Si 3 N 4) is formed to a thickness of 0.1 to 1.0 μm between the first metal base layers 2a by means such as sputtering or plasma CVD. A pattern is formed on the substrate 1. This insulating film 3 is necessary for stabilizing the resistance temperature characteristics as a thin film thermistor element by preventing the thermal diffusion reaction between the thermistor thin film and the substrate when the thermistor thin film is heat-treated after the thermistor thin film is formed in the subsequent process. Is something.

  After the first metal base layer 2a and the insulating film 3 are formed, as shown in FIG. 2 (b), Pt, Pd, Pd are formed on the insulating film 3 and the first metal base layer 2a by sputtering or the like. An electrode film 4 such as -Ag is formed. The electrode film 4 shown in the figure is opposed to the first metal base layer 2a at both ends of the ceramic substrate 1 on the insulating coating 3 so as to be an electrode of a thermistor thin film formed in the subsequent process. Is formed. The shape of the electrode film 4 may be a pattern formed in a configuration in which the electrode films formed in a comb shape mesh with each other in addition to the butting structure as shown in the above-described embodiment.

  Next, as shown in FIG. 2C, a thermistor thin film 5 having a thickness of 0.1 to 3 μm is formed on the pair of electrode films 4 formed on the insulating coating 3 by sputtering. Thereafter, heat treatment is performed at a temperature of 500 to 1000 ° C. for 1 to 5 hours. Here, the thermistor thin film 5 is targeted to a sintered body of a complex oxide made of manganese (Mn), cobalt (Co), nickel (Ni), iron (Fe), etc., and the sputtering pressure is 0.2 Pa to 0.00. The ceramic substrate 1 is formed by sputtering at a temperature of 200 ° C. to 500 ° C. at 7 Pa. Then, unnecessary portions are removed by a photoetching method.

  Thereafter, as shown in FIG. 2 (d), as a passivation film for protecting the formed thermistor thin film 5, for example, a protective film such as silicon dioxide (SiO2), silicon nitride (Si3N4) or oxynitride silicon thin film 6 is formed on the thermistor thin film 5 and the electrode film 4 with a film thickness of 0.5 to 2.0 μm. By completing the above manufacturing process, the thin film thermistor element portion is completed while leaving a glass layer, a second metal base layer, a metal film, and bumps to be described later formed.

  Next, the process proceeds to the manufacturing process of the thin film resistance element. As shown in FIG. 3A, after a resistive thin film 7 such as a Ni—Cr alloy film is formed on the ceramic substrate 1 adjacent to the thin film thermistor element by sputtering, a pattern is formed by photoetching. Then, a protective film 6 such as silicon dioxide (SiO 2) or silicon nitride (Si 3 N 4) is formed as a passivation film on the resistance thin film 7 as shown in FIG.

  In the next step, the glass layer 8 is formed. The glass layer 8 is a glass layer of a borosilicate glass-based oxide on the protective film 6 shown in FIG. 2D and the resistive thin film 7 made of a Ni—Cr alloy shown in FIG. 3B in the thin film thermistor element. Is formed by sputtering or CVD. After film formation, heat treatment is performed at a temperature of about 300 to 800 ° C., and the film is planarized by passing through a reflow process in which the film is once melted. Thus, step coverage of the thin film thermistor element can be improved and pinholes in the glass layer can be reduced. If there is a need to increase the heat treatment temperature of the glass layer 8, a part of the composition constituting the glass layer 8 may diffuse into the thermistor thin film 5 and the electrical characteristics may fluctuate. A thin film layer of tantalum oxide or titanium oxide may be formed as a buffer film (not shown) between 6 and the glass layer 8. The buffer layer may be appropriately selected and used as necessary.

  Thereafter, a part of the glass layer 8 and the protective film 6 covering the thin film thermistor element and the thin film resistor element is removed by a photoetching method. In the thin film thermistor element, as shown in FIG. Expose both ends of. In the thin film resistance element, both ends of the resistance thin film 7 are exposed as shown in FIG. Then, the second metal base layer 2b is patterned on the ceramic substrate 1 so as to cover a part of the exposed electrode film 4 of the thin film thermistor element. Thereafter, as shown in FIGS. 2 (f) and 3 (d), a metal film 11 comprising a contact layer 9 and a bonding layer 10 for bump formation to be described later on the second metal base layer 2b and the resistance thin film 7. Are stacked. The contact layer 9 is made of Ni, Cu or an alloy film thereof, and the bonding layer 10 is made of Au or an alloy film containing Au by a sputtering method or the like.

  Finally, as shown in FIGS. 2 (g) and 3 (e), an electrolytic plating method is used to form bumps on the bonding layer 10 of the terminal portions of the thin film thermistor element and the thin film resistance element. , Sn, Ag, Cu, or an alloy material made of a combination thereof is deposited. Bump formation of the thin film thermistor element and the thin film resistor element can be performed simultaneously. As a method for forming bumps, a paste made of the above material can be formed by other methods such as a screen printing method. Through such steps, a chip-type composite electronic component as shown in FIG. 1 is completed.

  The resistance thin film 7 made of a Ni—Cr alloy film of the thin film resistance element shown in FIG. 2 of the above embodiment is an example of a thin film formed in a plate shape, but the resistance thin film 7 of the thin film resistance element shown in FIG. Of course, a pattern having a zigzag shape may be formed. Although not shown in the above embodiment, a trimming portion may be provided in the resistive thin film 7 so that the resistance value can be adjusted.

  Further, in FIG. 2 of the above embodiment, the structure of the thermistor thin film 5 of the thin film thermistor element may be as shown in FIG. 5 (a) or (b). The thin film thermistor element shown in FIG. 5A has a structure in which a floating electrode 13 is provided on the upper surface of the thermistor thin film 5 in order to obtain a low resistance thin film thermistor element. By adopting such a structure in which the floating electrode is formed, a thin film thermistor element having a lower resistance than that of the thin film thermistor element having the structure of FIG. Further, the thin film thermistor element of FIG. 5B shows a structure in which another thermistor thin film 14 is formed on the thermistor thin film 5. Thus, by laminating the thermistor thin films 5 and 14, the resistance value of the thermistor thin film can be finely adjusted. The configuration of the thermistor thin film shown in FIG. 5 may be appropriately selected and adopted according to the purpose in the step of forming the thermistor thin film of the above embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 6 is a perspective view showing the external appearance of the chip-type composite electronic component of the present invention in which two thin film thermistor elements are formed on one ceramic substrate. In FIG. 6, in order to make the internal structure easy to see, a part of the thin film constituting the present invention is omitted. 7A to 7H are cross-sectional views for explaining the manufacturing process of the first thin film thermistor element portion of the chip-type composite electronic component. FIGS. 8A to 8H are cross-sectional views for explaining the manufacturing process of the second thin film thermistor element portion of the chip-type composite electronic component. 6 is a cross-sectional view of the first thin film thermistor element corresponding to FIG. 7H, and the BB cross-sectional view of FIG. 6 corresponds to FIG. 8H. It is sectional drawing of the 2nd thin film thermistor element. The first thin film thermistor element and the second thin film thermistor element of the chip-type composite electronic component of the present invention are manufactured through the following steps. For convenience of explanation, the middle part of manufacturing and the final component will be described using the same reference numerals.

  First, as shown in FIGS. 7 (a) and 8 (a), the main surface of a ceramic substrate 1 made of ceramics such as alumina, quartz, mullite, steatite, etc., is used for the first and second thin film thermistor elements. A pair of first metal underlayers 2a are respectively formed on the ceramic substrate 1 by patterning a metal material such as Ti, Cr, Cu, Ti-Cu, W, Ni using a known means such as sputtering.

  Next, as shown in FIG. 7A, an insulating coating 3 made of silicon dioxide (SiO 2) or silicon nitride (Si 3 N 4) is formed to a thickness of 0.1 to 1.0 μm by means such as sputtering or plasma CVD. A pattern is formed on the ceramic substrate 1 between the first metal base layers 2a. This insulating coating 3 prevents the thermal diffusion reaction between the thermistor thin film and the substrate when the thermistor thin film is heat-treated after the first thermistor thin film is formed in the subsequent process, and stabilizes the resistance temperature characteristic as a thin film thermistor element. It is necessary for

  After forming the first metal underlayer 2a and the insulating film 3, as shown in FIG. 7B, the insulating film 3 of the first thin film thermistor element and the first metal underlayer 2a are formed on the first metal underlayer 2a by sputtering or the like. An electrode film 4a made of Pt, Pd, Pd-Ag or the like is formed. The electrode film 4a shown in the figure is opposed to the first metal base layer 2a at both ends of the ceramic substrate 1 on the insulating coating 3 so as to be an electrode of the first thermistor thin film formed in the subsequent process. It is formed as follows. The shape of the electrode film 4a may be a pattern formed in a configuration in which the electrode films formed in a comb shape mesh with each other in addition to the butting structure as shown in the above embodiment.

  Next, as shown in FIG. 7C, a first thermistor having a thickness of 0.1 to 3.0 μm is formed by sputtering on the pair of electrode films 4a formed on the insulating film 3 on the first thin film thermistor element side. A thin film 5a is formed. Thereafter, heat treatment is performed at a temperature of 500 to 1000 ° C. for 1 to 5 hours. Here, the first thermistor thin film 5a targets a complex oxide sintered body made of manganese (Mn), cobalt (Co), nickel (Ni), iron (Fe), etc., and has a sputtering pressure of 0.2 Pa- Sputtering is performed while the ceramic substrate 1 is heated to a temperature of 200 ° C. to 500 ° C. at 0.7 Pa. Then, unnecessary portions are removed by a photoetching method.

  Thereafter, as shown in FIG. 7D, as a passivation film for protecting the first thermistor thin film 5a, for example, a protective film 6a such as silicon dioxide (SiO 2), silicon nitride (Si 3 N 4), or oxynitride silicon thin film. Is formed on the first thermistor thin film 5a and the electrode film 4a with a film thickness of 0.5 to 2.0 μm. When forming the protective coating 6a, the insulating coating 6a shown in FIG. 8B is simultaneously patterned on the ceramic substrate 1 between the first metal base layers 2a. This insulating film 6a prevents the thermal diffusion reaction between the thermistor thin film and the substrate when the thermistor thin film is heat-treated after the second thermistor thin film is formed in the subsequent process, and stabilizes the resistance temperature characteristic as a thin film thermistor element. It is necessary for

  After the first metal base layer 2a and the insulating film 6a are formed, as shown in FIG. 8C, Pt, Pd, and the like are formed on the insulating film 6a and the first metal base layer 2a by sputtering or the like. An electrode film 4b such as Pd—Ag is formed. The electrode film 4b shown in the figure is opposed to the first metal base layer 2a at both ends of the ceramic substrate 1 on the insulating coating 6a so as to be an electrode of a second thermistor thin film formed in the subsequent process. Formed as follows. The shape of the electrode film 4b may be a pattern formed in a configuration in which the electrode films formed in a comb-tooth shape are engaged with each other, in addition to the butting structure as shown in the above embodiment.

  Next, as shown in FIG. 8D, a second B constant smaller (or a larger B constant) than the first thermistor thin film 5a having a thickness of 0.1 to 3 μm is formed on the pair of electrode films 4b by sputtering. The thermistor thin film 5b is formed. In the present embodiment, the first and second thermistor thin films 5b having different resistance temperature characteristics can be formed by using targets having compositions that provide desired characteristics, respectively. Thereafter, heat treatment is performed at a temperature of 500 to 1000 ° C. for 1 to 5 hours. Then, unnecessary portions are removed by a photoetching method. Then, as shown in FIG. 8 (e), as a passivation film for protecting the second thermistor thin film 5b, for example, a protective film 6b such as silicon dioxide (SiO2), silicon nitride (Si3N4) or oxynitride silicon thin film. Is formed on the second thermistor thin film 5b and the electrode film 4b with a film thickness of 0.5 to 2.0 μm. By completing the above manufacturing process, the portions of the first thin film thermistor element and the second thin film thermistor element are completed with the formation of the glass layer, the second metal base layer, the metal film, and the bumps described later.

  In the next step, the glass layer 8 is formed. The glass layer 8 is formed on the protective film 6b of the first thin film thermistor element shown in FIG. 7 (e) and on the protective film 6b of the second thin film thermistor element shown in FIG. 8 (e). A glass layer of a system oxide is formed by sputtering or CVD. After film formation, heat treatment is performed at a temperature of about 300 to 800 ° C., and the film is planarized by passing through a reflow process in which the film is once melted. Thus, step coverage of the thin film thermistor element can be improved and pinholes in the glass layer can be reduced. If there is a need to increase the heat treatment temperature of the glass layer 8, a part of the composition constituting the glass layer 8 may diffuse into the thermistor thin films 5a and 5b and the electrical characteristics may fluctuate. A thin film layer of tantalum oxide or titanium oxide may be formed as a buffer film (not shown) between the protective film 6b and the glass layer 8. The buffer film may be appropriately selected and used as necessary.

  Thereafter, the protective coatings 6a and 6b of the first thin film thermistor element, the protective coating 6b of the second thin film thermistor element and a part of the glass layer 8 covering the first and second thin film thermistor elements are removed by a photoetching method. As shown in FIGS. 7F and 8F, both end portions of the electrode films 4a and 4b of the first and second thin film thermistor elements are exposed. Then, the second metal base layer 2b is patterned on the ceramic substrate 1 so as to cover a part of the exposed electrode films 4a and 4b of the first and second thin film thermistor elements. Thereafter, as shown in FIGS. 7 (g) and 8 (g), a metal film 11 comprising a contact layer 9 and a bonding layer 10 for bump formation described later is laminated on the second metal base layer 2b. The The contact layer 9 is made of Ni, Cu or an alloy film thereof, and the bonding layer 10 is made of Au or an alloy film containing Au by a sputtering method or the like.

  Finally, as shown in FIGS. 7 (h) and 8 (h), an electrolytic plating method is used to form bumps on the bonding layer 10 of the terminal portions of the first and second thin film thermistor elements. Then, bumps are formed simultaneously by depositing an alloy material made of Sn, Ag, Cu, or a combination thereof. As a method for forming bumps, a paste made of the above material can be formed by other methods such as a screen printing method. Through such steps, a chip-type composite electronic component as shown in FIG. 6 is completed.

  In the present invention, a composite electronic component having a structure in which a thin film thermistor element and a thin film resistor element are combined on a single substrate or two thin film thermistor elements are mounted has been described. If a capacitive element can be formed, it is possible to produce a temperature sensor that can prevent noise entering from a cable connected to these composite parts during temperature detection.

It is a perspective view which shows the external appearance of the chip type composite electronic component of this invention. (Example 1) (A)-(g) is sectional drawing by the AA of FIG. 1 for demonstrating the manufacturing process of a thin film thermistor element part. (Example 1) (A)-(e) is sectional drawing by the BB line of FIG. 1 for demonstrating the manufacturing process of a thin film resistance element part. (Example 1) The other example of the shape of the resistance thin film 7 of a thin film resistance element is shown. (Example 1) Another structural example of the portion of the thermistor thin film 5 of the thin film thermistor element is shown. (Example 1) It is a perspective view which shows the external appearance of the chip type composite electronic component of this invention. (Example 2) (A)-(h) is sectional drawing by the AA of FIG. 6 for demonstrating the manufacturing process of a 1st thin film thermistor element part. (Example 2) (A)-(h) is sectional drawing by the BB line of FIG. 6 for demonstrating the manufacturing process of a 2nd thin film thermistor element part. (Example 2)

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Ceramic substrate 2a 1st metal base layer 2b 2nd metal base layer 3 Insulation film 4 Electrode film 5a 1st thermistor thin film 5b 2nd thermistor thin film 6a, 6b Protective film 7 Resistance thin film 8 Glass layer 9 Contact layer 10 Bonding layer 11 Metal Membrane 12 Bump

Claims (10)

  In a chip-type composite electronic component in which a thin film thermistor element and a thin film resistor element are formed on one ceramic substrate, a pair of first metal underlayers formed by facing the thin film thermistor element on one ceramic substrate; An insulating film formed on the ceramic substrate between the first metal base layers, a part of the insulating film, a pair of electrode films formed on the first metal base layer, and the pair on the insulating film A thermistor thin film made of a metal oxide formed so as to cover a part of the electrode film, a protective film covering the thermistor thin film, and a glass layer, and the thin film resistance element is adjacent to the thin film thermistor element A resistive thin film made of a Ni-Cr alloy formed on the ceramic substrate, and a protective film and a glass layer for protecting a part of the resistive thin film. A metal film covering a portion of the exposed pair of electrode films at both ends of the thin film thermistor element, on a second metal base layer formed on the ceramic substrate, and on the exposed resistance thin film at both ends of the thin film resistor element A chip-type composite electronic component, wherein bumps are formed via   In a chip-type composite electronic component in which two thin film thermistor elements are formed on a single ceramic substrate, a pair of first metal underlayers formed so that each thin film thermistor element is opposed to the ceramic substrate; Insulating film formed on the ceramic substrate between one metal base layer, a part of the insulating film, a pair of electrode films formed on the first metal base layer, and the pair of electrodes on the insulating film A thermistor thin film made of a metal oxide film formed so as to cover a part of the film, and a protective film and a glass layer covering the thermistor thin film, and a pair of exposed both ends of each thin film thermistor element A chip type characterized in that a bump is formed on a second metal base layer formed on the ceramic substrate so as to cover a part of the electrode film via a metal film. If electronic components.   3. The chip-type composite electronic component according to claim 2, wherein the two thin film thermistor elements are composed of thermistor thin films having different resistance temperature characteristics.   The insulating film formed between the pair of first metal base layers on the ceramic substrate in the thin film thermistor element is made of silicon dioxide (SiO 2) or silicon nitride (Si 3 N 4) having a thickness of 0.1 μm to 1.0 μm. The chip-type composite electronic component according to claim 1.   3. The chip-type composite electronic component according to claim 1, wherein a protective film covering the thermistor thin film and / or the resistive thin film is made of silicon dioxide (SiO 2) or silicon nitride (Si 3 N 4).   The chip-type composite electronic component according to claim 1, wherein the glass layer is made of a borosilicate glass-based oxide.   The chip-type composite electronic component according to claim 1, wherein the metal film is composed of two layers of a contact layer and a bonding layer.   8. The chip-type composite electronic component according to claim 7, wherein the contact layer is made of Ni (nickel), Cu (copper), or an alloy containing any of these, and the bonding layer is made of Au (gold). .   The chip-type composite electronic component according to claim 1, wherein the bump is made of Sn (tin), Ag (silver), Cu (copper), or an alloy containing any of these. The first metal underlayer and the second metal underlayer are made of Ti (titanium), Cr (chromium), Cu (copper), Ag (silver), or an alloy containing any of these. A chip-type composite electronic component according to any one of 1, 2, 4

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