JP2006073962A - 受動qスイッチレーザ装置 - Google Patents
受動qスイッチレーザ装置 Download PDFInfo
- Publication number
- JP2006073962A JP2006073962A JP2004258947A JP2004258947A JP2006073962A JP 2006073962 A JP2006073962 A JP 2006073962A JP 2004258947 A JP2004258947 A JP 2004258947A JP 2004258947 A JP2004258947 A JP 2004258947A JP 2006073962 A JP2006073962 A JP 2006073962A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- crystal
- laser
- light
- polarization direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 133
- 230000010287 polarization Effects 0.000 claims abstract description 108
- 230000003287 optical effect Effects 0.000 claims abstract description 65
- 239000006096 absorbing agent Substances 0.000 claims abstract description 37
- 238000002834 transmittance Methods 0.000 claims description 43
- 230000005284 excitation Effects 0.000 claims description 22
- 230000001965 increasing effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 abstract description 12
- 230000005540 biological transmission Effects 0.000 abstract 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005549 size reduction Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
- H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
【解決手段】レーザ装置10は、光共振器12の一対の反射手段12A,12B間に配置されると共に励起されて光を放出するレーザ媒質11と、一対の反射手段間であって光共振器12の光軸L上に配置されると共にレーザ媒質からの放出光21の吸収に伴って透過率が増加する可飽和吸収体14と、レーザ媒質を励起する波長の光22を出力する励起光源部13とを備える。上記可飽和吸収体14は、互いに直交する第1〜第3の結晶軸を有する結晶体であり、互いに直交する2つの偏光方向の放出光に対してそれぞれ異なる透過率を有するように光共振器12内に配置されている。この場合、より透過率の大きい偏光方向の放出光に対してレーザ発振が生じる結果、偏光方向の安定したレーザ光を得られる。
【選択図】図1
Description
A. V. Kir’yanov and V. Aboites, "Enhancing type-II optical second-harmonic generation by the use of a laser beam with a rotating azimuth of polarization" APPLIED PHYSICS LETTERS, 12 FEBURUARY 2001,Vol.78, No.7 pp874-876. Alexander V. Kir’yanov and Vicente Aboites, "Second-harmonic generation by Nd3+:YAG/Cr4+:YAG-laser pulses with changing state of polarization", J. Opt. Soc. Am. B, October 2000, Vol.17, No.10, pp1657-1664 A. V. Kir’yanov, J. J. Soto-Bernal, and V.J. Pinto-Robledo, "SHG by a Nd3+:YAG /Cr4+:YAG laser pulse with changing-in-time polarization", Advanced Solid-State Lasers, 2002, Vol.68, pp88-92.
Claims (6)
- 光共振器を構成する一対の反射手段間に配置されると共に、励起されて光を放出するレーザ媒質と、
前記一対の反射手段間であって前記光共振器の光軸上に配置されると共に、前記レーザ媒質から放出された放出光の吸収に伴って透過率が増加する可飽和吸収体と、
前記レーザ媒質を励起する波長の光を出力する励起光源部と、
を備え、
前記可飽和吸収体は、互いに直交する第1〜第3の結晶軸を有する結晶体であり、前記レーザ媒質から放出される互いに直交する2つの偏光方向の放出光に対してそれぞれ異なる透過率を有するように光共振器内に配置されていることを特徴とする受動Qスイッチレーザ装置。 - 前記第1の角度θがπ/2であって、前記第2の角度φがπ/4であることを特徴とする請求項1又は2に記載の受動Qスイッチレーザ装置。
- 前記可飽和吸収体が、Cr4+:YAG結晶であって、
前記第1の結晶軸は<001>軸であり、前記第2の結晶軸は<100>軸であり、前記第3の結晶軸は<010>軸であることを特徴とする請求項1〜3の何れか一項に記載の受動Qスイッチレーザ装置。 - 前記可飽和吸収体が、V:YAG結晶であって、
前記第1の結晶軸は<001>軸であり、前記第2の結晶軸は<100>軸であり、前記第3の結晶軸は<010>軸であることを特徴とする請求項1〜3の何れか一項に記載の受動Qスイッチレーザ装置。 - 前記可飽和吸収体が、GaAsであることを特徴とする請求項1〜3の何れか一項に記載の受動Qスイッチレーザ装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004258947A JP4530348B2 (ja) | 2004-09-06 | 2004-09-06 | 受動qスイッチレーザ装置 |
PCT/JP2005/016315 WO2006028078A1 (ja) | 2004-09-06 | 2005-09-06 | 受動qスイッチレーザ装置 |
US11/661,327 US7664148B2 (en) | 2004-09-06 | 2005-09-06 | Passive Q switch laser device |
CNB200580029865XA CN100492786C (zh) | 2004-09-06 | 2005-09-06 | 无源q开关激光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004258947A JP4530348B2 (ja) | 2004-09-06 | 2004-09-06 | 受動qスイッチレーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006073962A true JP2006073962A (ja) | 2006-03-16 |
JP4530348B2 JP4530348B2 (ja) | 2010-08-25 |
Family
ID=36036359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004258947A Active JP4530348B2 (ja) | 2004-09-06 | 2004-09-06 | 受動qスイッチレーザ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7664148B2 (ja) |
JP (1) | JP4530348B2 (ja) |
CN (1) | CN100492786C (ja) |
WO (1) | WO2006028078A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009540582A (ja) * | 2006-06-13 | 2009-11-19 | アー・ファウ・エル・リスト・ゲー・エム・ベー・ハー | モノリシック構造の共振器を備える固体レーザ |
US7817704B2 (en) | 2005-03-17 | 2010-10-19 | Scientific Materials Corporation | Monoblock laser with improved alignment features |
US7839904B1 (en) * | 2006-01-26 | 2010-11-23 | Scientific Materials Corporation | Monoblock laser systems and methods |
WO2012137384A1 (ja) * | 2011-04-05 | 2012-10-11 | 独立行政法人産業技術総合研究所 | レーザ着火装置 |
JP2016063063A (ja) * | 2014-09-18 | 2016-04-25 | 株式会社トプコン | レーザ発振装置 |
WO2016092701A1 (ja) * | 2014-12-12 | 2016-06-16 | 株式会社島津製作所 | 受動qスイッチレーザ |
WO2018221083A1 (ja) | 2017-05-29 | 2018-12-06 | ソニー株式会社 | 受動qスイッチパルスレーザー装置、加工装置および医療装置 |
US10153607B2 (en) | 2015-05-12 | 2018-12-11 | Shimadzu Corporation | Passive Q-switch laser and method for optimizing action of the same |
JP2019062229A (ja) * | 2018-12-18 | 2019-04-18 | 株式会社トプコン | レーザ発振装置 |
WO2021171957A1 (ja) * | 2020-02-27 | 2021-09-02 | ソニーグループ株式会社 | 光共振器、光共振器の構成部品、およびレーザー装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8705623B2 (en) | 2009-10-02 | 2014-04-22 | Texas Instruments Incorporated | Line-based compression for digital image data |
US20120140782A1 (en) * | 2010-12-07 | 2012-06-07 | Raytheon Company | Low timing jitter, single frequency, polarized laser |
US9236703B2 (en) * | 2011-11-07 | 2016-01-12 | Raytheon Company | Laser system and method for producing a linearly polarized single frequency output using polarized and non-polarized pump diodes |
US9515448B2 (en) | 2012-09-26 | 2016-12-06 | Raytheon Company | Microchip laser with single solid etalon and interfacial coating |
FR3019388B1 (fr) * | 2014-03-27 | 2017-06-16 | Cilas | Cavite laser instable a declencheur passif pourvu d'un absorbant saturable a gradient d'absorption |
JP2016033949A (ja) | 2014-07-31 | 2016-03-10 | 株式会社トプコン | レーザ発光装置及びレーザ測量機 |
US10811835B2 (en) | 2017-02-16 | 2020-10-20 | University Of Pittsburgh-Of The Commonwealth System Of Higher Education | Laser system enabled by additive manufacturing |
AT521942B1 (de) | 2018-12-14 | 2022-09-15 | Daniel Kopf Dr | Gütegeschalteter Festkörperlaser |
AT522108B1 (de) | 2019-01-31 | 2022-09-15 | Montfort Laser Gmbh | Passiv gütegeschalteter Festkörperlaser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08146364A (ja) * | 1994-11-16 | 1996-06-07 | Oki Electric Ind Co Ltd | 半導体レーザおよびその作動方法 |
US6804272B2 (en) * | 2000-04-12 | 2004-10-12 | The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Self-pulsating laser diode and a method for causing a laser diode to output light pulses |
-
2004
- 2004-09-06 JP JP2004258947A patent/JP4530348B2/ja active Active
-
2005
- 2005-09-06 CN CNB200580029865XA patent/CN100492786C/zh active Active
- 2005-09-06 WO PCT/JP2005/016315 patent/WO2006028078A1/ja active Application Filing
- 2005-09-06 US US11/661,327 patent/US7664148B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08146364A (ja) * | 1994-11-16 | 1996-06-07 | Oki Electric Ind Co Ltd | 半導体レーザおよびその作動方法 |
US6804272B2 (en) * | 2000-04-12 | 2004-10-12 | The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Self-pulsating laser diode and a method for causing a laser diode to output light pulses |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7817704B2 (en) | 2005-03-17 | 2010-10-19 | Scientific Materials Corporation | Monoblock laser with improved alignment features |
US7839904B1 (en) * | 2006-01-26 | 2010-11-23 | Scientific Materials Corporation | Monoblock laser systems and methods |
JP2009540582A (ja) * | 2006-06-13 | 2009-11-19 | アー・ファウ・エル・リスト・ゲー・エム・ベー・ハー | モノリシック構造の共振器を備える固体レーザ |
WO2012137384A1 (ja) * | 2011-04-05 | 2012-10-11 | 独立行政法人産業技術総合研究所 | レーザ着火装置 |
JP2012219661A (ja) * | 2011-04-05 | 2012-11-12 | National Institute Of Advanced Industrial Science & Technology | レーザ着火装置 |
JP2016063063A (ja) * | 2014-09-18 | 2016-04-25 | 株式会社トプコン | レーザ発振装置 |
WO2016092701A1 (ja) * | 2014-12-12 | 2016-06-16 | 株式会社島津製作所 | 受動qスイッチレーザ |
JPWO2016092701A1 (ja) * | 2014-12-12 | 2017-04-27 | 株式会社島津製作所 | 受動qスイッチレーザ |
US10153607B2 (en) | 2015-05-12 | 2018-12-11 | Shimadzu Corporation | Passive Q-switch laser and method for optimizing action of the same |
WO2018221083A1 (ja) | 2017-05-29 | 2018-12-06 | ソニー株式会社 | 受動qスイッチパルスレーザー装置、加工装置および医療装置 |
US11183809B2 (en) | 2017-05-29 | 2021-11-23 | Sony Corporation | Passive Q-switch pulse laser device, processing apparatus, and medical apparatus |
JP2019062229A (ja) * | 2018-12-18 | 2019-04-18 | 株式会社トプコン | レーザ発振装置 |
WO2021171957A1 (ja) * | 2020-02-27 | 2021-09-02 | ソニーグループ株式会社 | 光共振器、光共振器の構成部品、およびレーザー装置 |
Also Published As
Publication number | Publication date |
---|---|
US7664148B2 (en) | 2010-02-16 |
CN100492786C (zh) | 2009-05-27 |
US20090016385A1 (en) | 2009-01-15 |
CN101010839A (zh) | 2007-08-01 |
JP4530348B2 (ja) | 2010-08-25 |
WO2006028078A1 (ja) | 2006-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7664148B2 (en) | Passive Q switch laser device | |
US7826500B2 (en) | Fiber laser and optical device | |
US20170104308A1 (en) | Solid-state laser device based on a twisted-mode cavity and a volume grating | |
JPWO2005073795A1 (ja) | 電磁波発生装置 | |
JP2007012981A (ja) | 光学素子の内部全反射面に高反射コーティングを施したレーザ装置 | |
US20170133815A1 (en) | Microchip laser | |
JP7140114B2 (ja) | 受動qスイッチパルスレーザー装置、加工装置および医療装置 | |
JP3899411B2 (ja) | 3つの反射面による多重反射で構成される光路を用いたスラブ型固体レーザ媒体、またはスラブ型非線形光学媒体 | |
JP2015015337A (ja) | モードロックレーザ | |
JP3683360B2 (ja) | 偏光制御素子および固体レーザー | |
US6064684A (en) | Unidirectionally operating laser apparatus using semimonolithic ring cavity | |
JPH06130328A (ja) | 偏光制御素子および固体レーザー装置 | |
Cho et al. | Compactly efficient CW 3 to 4.5 μm wavelength tunable mid-infrared laser in optically pumped semiconductor laser with intracavity OPO | |
JP5933754B2 (ja) | 平面導波路型レーザ装置 | |
US20060221434A1 (en) | Laser oscillation device | |
JP2009218232A (ja) | レーザ光源装置及びこれを用いた画像生成装置 | |
US20070041420A1 (en) | Solid-state laser device | |
JP2018031811A (ja) | 2波長同時発振型赤外光パラメトリック発振装置 | |
JP2009015040A (ja) | レーザ光第2高調波発生装置 | |
WO2021171957A1 (ja) | 光共振器、光共振器の構成部品、およびレーザー装置 | |
JP2006237530A (ja) | 光励起固体レーザ装置 | |
JP2518179B2 (ja) | レ―ザ光源 | |
JP2021132127A (ja) | 半導体レーザ励起固体レーザ | |
JP2001257403A (ja) | 固体レーザ装置 | |
JPH0745892A (ja) | 固体レーザ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040915 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070730 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070702 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100511 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100604 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4530348 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130618 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |