JP2006066799A - Processing device and processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To maintain high cleaning capability, without rotating a wafer at the time of cleaning after being developed, and further to restrict the quantity of cleaning solution consumed. <P>SOLUTION: A charged rod 173, which moves on a wafer W retained by a chuck 120, is provided in a developing device 30. Developer is filled on the wafer W, and if a prescribed time period has passed, the charged rod 173 is charged with reverse electric charges to those of a processing products in the developer, while being moved in the developer on the wafer W. When this takes place, the processing products in the developer are gathered by the charged rod 173 by static electricity. As a result, thereafter, even if the cleaning solution for the wafer W is supplied with non-rotatingly, a small quantity is used for the cleaning solution, the wafer W can be cleaned sufficiently. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate development processing apparatus and a development processing method.

  For example, in a photolithography process in a semiconductor device manufacturing process, for example, a developing process for developing a wafer exposed in a predetermined pattern is performed. This development processing is usually performed in a development processing apparatus. In the development processing apparatus, for example, a developer is supplied from a developer supply nozzle onto a wafer held by a spin chuck, and a liquid film of the developer is formed on the wafer surface. Once formed, the wafer is developed. Thereafter, the cleaning liquid is supplied onto the wafer by the cleaning liquid supply nozzle, and the wafer is rotated at a high speed to be cleaned. By this washing, the development product generated in the developer on the wafer during development is removed.

  However, in the development processing apparatus described above, since the wafer is rotated at a high speed during cleaning, a large and high torque motor is required. For this reason, a large space for the motor is required, and the development processing apparatus is enlarged. In addition, the power consumption for rotating the motor is large, and the running cost has also increased. In order to solve this problem, for example, it can be proposed to clean the wafer without rotating the wafer.

  For example, it is proposed to clean the wafer by discharging the cleaning liquid toward the wafer while moving the cleaning liquid supply nozzle close to the wafer surface and moving the cleaning liquid supply nozzle from one end to the other end of the wafer. (For example, refer to Patent Document 1).

  However, when the wafer is cleaned without rotation as described above, the centrifugal force does not act on the wafer, so that the cleaning capability tends to be insufficient, and a development product may remain on the wafer surface. Even if a slight amount of the development product remains on the wafer surface, it causes, for example, a pattern defect, resulting in a decrease in yield. Further, if the cleaning liquid is ejected at a large flow rate on the wafer in order to improve the cleaning performance, the consumption of the cleaning liquid increases correspondingly, so that the running cost increases even if it does not rotate.

Japanese Patent Laid-Open No. 2004-14869

  The present invention has been made in view of such points, and even when a substrate such as a wafer is not rotated during cleaning after development, high cleaning capability can be maintained and consumption of cleaning liquid can be further suppressed. It is an object of the present invention to provide a development processing apparatus and a development processing method.

  In order to achieve the above object, the present invention provides a development processing apparatus for developing a substrate, comprising: a holding member that holds the substrate; a developer that is supplied onto the substrate held by the holding member; A developer supply nozzle that forms a liquid film of the developer on the surface, and a collecting member that contacts the developer on the substrate in a charged state and collects a development product in the developer using static electricity A charging mechanism for charging the collecting member to a predetermined charge; and a moving mechanism for bringing the collecting member into contact with the developer on the substrate and further moving along the surface of the substrate in the contacted state. And a cleaning liquid supply nozzle for supplying a cleaning liquid onto the substrate held by the holding member.

  When the developer film is formed on the substrate and the substrate is developed, a development product such as insolubilized particles is generated in the developer, and the development product is charged to a predetermined charge in the developer. ing. According to the present invention, after the developer film is formed on the substrate and the substrate is developed, the collection product charged with a different charge from the development product in the developer is brought into contact with the developer, and the surface of the substrate By moving the top, the development product in the developer can be collected. After the collection, the substrate can be cleaned by supplying a cleaning liquid onto the substrate. As described above, since the development product is collected before the cleaning liquid is supplied to the substrate, the development generation can be performed without rotating the substrate at high speed during cleaning or without discharging a large flow of cleaning liquid to the substrate. The substrate can be sufficiently cleaned so that no object remains.

  The collecting member may be formed in an elongated shape that is the same as or longer than the dimensions of the substrate. In this case, for example, the development product on the surface of the substrate can be collected by scanning the collecting member once from one end to the other end of the substrate by a moving mechanism.

  The collecting member may have a lower surface in contact with the developer that is convexly curved downward. Further, the collecting member may be provided with irregularities on the lower surface that contacts the developer. In such a case, the contact area of the collecting member with the developer increases, so that the development product can be collected more efficiently.

  A blade portion for stirring the developer is formed on the lower surface of the collecting member that is in contact with the developer, and the blade portion has a depression angle on the moving direction side of the collecting member from the lower surface of the collecting member. It may be formed toward the direction. In such a case, when the collecting member moves on the substrate surface, the developer is stirred by the blades, and for example, the development product deposited on the bottom of the developer on the substrate surface is wound up. As a result, the development product easily comes into contact with the collecting member, and the development product is efficiently collected.

  The development processing apparatus may include a stirring member that supplies a liquid to the developer on the substrate held by the holding member to stir the developer. In such a case, for example, the development product deposited on the bottom of the developer on the surface of the substrate is rolled up by the stirring member, so that the development product can easily come into contact with the collection member, and the development product can be collected efficiently.

  The stirring member may include a liquid discharge port having a length equal to or longer than the dimension of the substrate, and further includes a moving mechanism that moves the stirring member from one end of the substrate to the other end along the surface of the substrate. Good. The dimension of the substrate is the diameter of the substrate when the substrate is circular, and the length of one side of the substrate when the substrate is square.

  The stirring member and the collecting member may be provided side by side, and the stirring member may be disposed on the moving direction side of the collecting member. In such a case, the development product wound up in the developer by the stirring member can be immediately collected by the collecting member.

  The stirring member may also be used as the collecting member, the liquid discharge port may be formed in a lower surface portion of the stirring member, and the charging mechanism may charge the lower surface portion of the stirring member. In such a case, the stirring of the developer and the collection of the development product in the developer can be performed by the same member. Further, the development product in the developer can be collected almost simultaneously with the stirring of the developer. The stirring member may also be used as the cleaning liquid supply nozzle.

  The development processing apparatus may include a holding member charging mechanism that charges the holding member. In such a case, the holding member holding the substrate can be charged, for example, with a charge opposite to that of the development product, and the development product deposited on the bottom of the substrate surface can be floated by static electricity. As a result, the development product and the collecting member are easily brought into contact with each other, and the development product can be collected effectively.

  The development processing apparatus may include a vibration mechanism that vibrates the holding member. In this case, the development product deposited on the bottom of the developer on the surface of the substrate can be floated by applying vibration to the holding member that holds the substrate. As a result, the development product and the collecting member are easily brought into contact with each other, and the development product can be collected effectively.

  The development processing apparatus may include a cleaning container for storing and cleaning the collecting member. The charging mechanism of the collecting member may be capable of charging the repair member to both kinds of charges. In such a case, the developing member that collects the development product can be charged with the same type of charge as the development product, and the development product can be detached from the collecting member. Thereby, the washing | cleaning which drops a development product from a collection member can be performed easily.

  The cleaning container may be configured to store a cleaning liquid for the collecting member, and may further include a cleaning container charging mechanism that can charge the cleaning container body. In such a case, the development product adhering to the collection member can be released by immersing the collection member in the washing liquid in the washing container and further charging the washing container body with a charge that attracts the development product. Thereby, a collection member can be washed easily.

  The cleaning container may include a cleaning liquid discharge port that discharges a cleaning liquid for the collecting member to the collected collecting member. In such a case, the cleaning liquid can be discharged to the collecting member accommodated in the washing container, and the development product attached to the collecting member can be washed away by the water flow.

  According to another aspect of the present invention, there is provided a development processing method for developing a substrate, the step of supplying the developer to the substrate to develop the substrate, and the development product in the developer after the substrate is developed. A step of bringing a collecting member charged to the electric charge into contact with the developer on the substrate to collect the development product in the developer, and then supplying a cleaning solution to the entire surface of the substrate to remove the substrate. And a step of cleaning.

  According to the present invention, it is possible to clean the substrate by supplying the cleaning solution onto the substrate after collecting the development product in the developer using static electricity, so that the substrate does not need to be rotated at high speed during cleaning. Alternatively, the substrate can be sufficiently cleaned so that a development product does not remain without supplying a large amount of cleaning liquid to the substrate.

  The development processing method may include a step of stirring the developer on the substrate before collecting the development product. In such a case, for example, since the development product deposited on the bottom of the developer on the substrate surface floats, the development product and the collecting member can easily come into contact with each other, and the development product can be collected more efficiently.

  According to the present invention, since the development product can be sufficiently removed from the substrate, pattern defects due to the development product are eliminated, and the yield is improved. Further, the development processing apparatus can be downsized and the running cost can be reduced.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing treatment system 1 in which the developing treatment apparatus according to the present embodiment is mounted, and FIG. 2 is a front view of the coating and developing treatment system 1. FIG. 2 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 is a cassette that carries, for example, 25 wafers W in and out of the coating and developing treatment system 1 from the outside in a cassette unit, and carries a wafer W in and out of the cassette C. A station 2, a processing station 3 in which a plurality of various processing apparatuses for performing a predetermined processing in a single wafer type in a photolithography process are arranged in multiple stages, and an exposure (not shown) provided adjacent to the processing station 3 The interface unit 4 that transfers the wafer W to and from the apparatus is integrally connected.

  In the cassette station 2, a plurality of cassettes C can be placed in a row in a predetermined position on the cassette placement table 5 in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a wafer transfer body 7 that can move in the X direction on the transfer path 6. The wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed.

  The wafer carrier 7 is rotatable in the θ direction around the Z axis, and can also access a temperature control device 60 and a transition device 61 belonging to a third processing device group G3 on the processing station 3 side described later.

  The processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages. On the negative side in the X direction (downward in FIG. 1) of the processing station 3, a first processing device group G1 and a second processing device group G2 are sequentially arranged from the cassette station 2 side. On the positive side in the X direction (upward in FIG. 1) of the processing station 3, the third processing device group G3, the fourth processing device group G4, and the fifth processing device group G5 are sequentially arranged from the cassette station 2 side. Has been placed. A first transfer device 10 is provided between the third processing device group G3 and the fourth processing device group G4. The first transfer device 10 can selectively access the processing devices in the first processing device group G1, the third processing device group G3, and the fourth processing device group G4 to transfer the wafer W. A second transfer device 11 is provided between the fourth processing device group G4 and the fifth processing device group G5. The second transfer device 11 can selectively access the processing devices in the second processing device group G2, the fourth processing device group G4, and the fifth processing device group G5 to transfer the wafer W.

  As shown in FIG. 2, the first processing apparatus group G1 includes a liquid processing apparatus that supplies a predetermined liquid to the wafer W and performs processing, for example, resist coating apparatuses 20, 21, and 22 that apply a resist solution to the wafer W. , Bottom coating devices 23 and 24 for forming an antireflection film for preventing reflection of light during the exposure process are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units 30 to 34 according to the present invention are stacked in five stages in order from the bottom. In addition, chemical chambers 40 and 41 for supplying various processing liquids to the liquid processing apparatuses in the processing apparatus groups G1 and G2 are provided at the bottom of the first processing apparatus group G1 and the second processing apparatus group G2. Each is provided.

  For example, as shown in FIG. 3, the third processing unit group G3 includes a temperature control device 60, a transition device 61 for delivering the wafer W, and a high-accuracy temperature for adjusting the temperature of the wafer W under high-precision temperature control. The high-temperature heat treatment apparatuses 65 to 68 for heat-treating the preparation apparatuses 62 to 64 and the wafer W at a high temperature are sequentially stacked in nine stages from the bottom.

  In the fourth processing unit group G4, for example, a high-precision temperature control device 70, pre-baking devices 71 to 74 that heat-treat the wafer W after the resist coating process, and post-baking devices 75 to 75 that heat-process the wafer W after the development processing. 79 are stacked in 10 steps from the bottom.

  In the fifth processing unit group G5, there are a plurality of thermal processing apparatuses that heat-treat the wafer W, such as high-precision temperature control apparatuses 80 to 83, and post-exposure baking apparatuses 84 to 89 that heat-treat the exposed wafer W in order from the bottom. It is stacked on the stage.

  As shown in FIG. 1, a plurality of processing devices are arranged on the positive side in the X direction of the first transfer device 10, for example, an adhesion device 90 for hydrophobizing the wafer W as shown in FIG. 91, and heating devices 92 and 93 for heating the wafer W are stacked in four stages in order from the bottom. As shown in FIG. 1, a peripheral exposure device 94 that selectively exposes only the edge portion of the wafer W, for example, is disposed on the positive side in the X direction of the second transfer device 11.

  In the interface unit 4, for example, as shown in FIG. 1, a wafer transfer body 101 moving on a transfer path 100 extending in the X direction and a buffer cassette 102 are provided. The wafer carrier 101 is movable in the Z direction and is also rotatable in the θ direction, and accesses an exposure apparatus (not shown) adjacent to the interface unit 4, the buffer cassette 102, and the fifth processing unit group G5. The wafer W can be transferred.

  Next, the configuration of the development processing apparatus 30 described above will be described in detail. FIG. 4 is an explanatory diagram of a longitudinal section showing an outline of the configuration of the development processing apparatus 30, and FIG. 5 is a plan view showing an outline of the configuration of the development processing apparatus 30.

  As shown in FIG. 4, the development processing apparatus 30 includes a chuck 120 as a holding member that holds the wafer W at the center. The chuck 120 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked onto the chuck 120 by suction from the suction port.

  The chuck 120 includes a chuck driving mechanism 121 including a driving unit such as a cylinder, and can move the chuck 120 up and down.

  Around the chuck 120 is provided a cup 122 that receives and collects the liquid scattered or dropped from the wafer W. The cup 122 includes, for example, an inner cup 123 that surrounds the periphery of the chuck 120, an outer cup 124 that covers the outer side of the inner cup 123, and a lower cup 125 that covers the inner cup 123 and the lower surface of the outer cup 124. Yes. The inner cup 123 and the outer cup 124 can mainly catch the liquid splashing outward of the wafer W, and the lower cup 125 collects the liquid falling from the inner walls of the inner cup 123 and the outer cup 124 and the wafer W. be able to.

  The inner cup 123 is formed, for example, in a substantially cylindrical shape, and its upper end portion is inclined toward the upper side inside. The inner cup 123 can be moved up and down by an elevating drive unit 126 such as a cylinder. For example, as shown in FIG. 5, the outer cup 124 is formed in a substantially cylindrical shape that is square when viewed from the top. As shown in FIG. 4, the outer cup 124 can be moved up and down by an elevating drive unit 127 such as a cylinder. The chuck 120 passes through the center of the lower cup 125. Around the chuck 120, for example, an annular member 128 that blocks the flow of the liquid that has flowed from the front surface to the back surface of the wafer W is provided. The annular member 128 includes, for example, a top near the back surface of the wafer W, and the liquid that travels on the back surface of the wafer W can be blocked at the top. The lower cup 125 is connected to, for example, a discharge pipe 129 that communicates with a liquid discharge section of a factory, and the liquid recovered in the cup 122 can be discharged from the development pipe 30 to the outside.

  As shown in FIG. 5, a rail 140 extending along the Y direction (left and right direction in FIG. 5) is formed on the X direction negative direction (downward direction in FIG. 5) side of the cup 122. The rail 140 is formed, for example, from the outside of the cup 122 in the Y direction negative direction (left direction in FIG. 5) to the outside of the cup 122 in the Y direction positive direction (right direction in FIG. 5). For example, two arms 141 and 142 are attached to the rail 140. A developer supply nozzle 143 is supported on the first arm 141. The first arm 141 can be moved in the Y direction on the rail 140 by the nozzle driving unit 144. By this first arm 141, the developer supply nozzle 143 moves from the standby unit 145 installed on the Y direction negative side of the cup 122 to the inside of the cup 122 and can move on the surface of the wafer W. Further, the first arm 141 can be moved in the vertical direction by, for example, a nozzle driving unit 144, and the developer supply nozzle 143 can be moved up and down.

  The developer supply nozzle 143 has, for example, an elongated shape along the X direction that is the same as or longer than the diameter of the wafer W. As shown in FIG. 4, a developer supply pipe 146 communicating with the developer supply source 145 is connected to the upper portion of the developer supply nozzle 143. A plurality of discharge ports 147 formed in a line along the longitudinal direction are formed below the developer supply nozzle 143. The developer supply nozzle 143 allows the developer introduced from the upper developer supply pipe 146 to flow through the developer supply nozzle 143 and be uniformly discharged from the lower discharge ports 147.

  The second arm 142 supports a cleaning liquid supply nozzle 150 as shown in FIG. The second arm 142 can move in the Y direction on the rail 140 by, for example, the nozzle driving unit 151. The second arm 142 allows the cleaning liquid supply nozzle 150 to move into the cup 122 from the standby unit 152 provided on the outer side of the cup 122 on the positive side in the Y direction, and move on the surface of the wafer W. The second arm 142 is also movable in the vertical direction by the nozzle driving unit 151.

  For example, as shown in FIGS. 5 and 6, the cleaning liquid supply nozzle 150 has an elongated shape along the X direction that is the same as or longer than the diameter of the wafer W. As shown in FIG. 4, a cleaning liquid supply pipe 154 that communicates with the cleaning liquid supply source 153 and an air supply pipe 156 that communicates with the air supply source 155 are connected to the upper part of the cleaning liquid supply nozzle 150. Note that pure water is stored in the cleaning liquid supply source 153 in the present embodiment, and pure water is supplied to the cleaning liquid supply nozzle 150 as a cleaning liquid.

  In the lower part of the cleaning liquid supply nozzle 150, for example, as shown in FIG. 6, a plurality of discharge ports 157 for discharging the cleaning liquid are formed linearly along the longitudinal direction. The plurality of discharge ports 157 are formed from one end of the cleaning liquid supply nozzle 150 in the longitudinal direction to the other end. In addition, a slit-like air outlet 158 extending from one end portion in the longitudinal direction to the other end portion is formed below the cleaning liquid supply nozzle 150. The air outlet 158 is formed in parallel with the outlet 157 along the moving direction (Y direction) of the cleaning liquid supply nozzle 150.

  As shown in FIG. 7, a cleaning liquid storage chamber 160 for temporarily storing the cleaning liquid introduced from the cleaning liquid supply pipe 154 is formed in the cleaning liquid supply nozzle 150. The cleaning liquid supply nozzle 150 allows the cleaning liquid introduced from the upper cleaning liquid supply pipe 154 to pass through the cleaning liquid storage chamber 160 inside the cleaning liquid supply nozzle 150 and be discharged uniformly from the lower discharge ports 157. In addition, an air retention chamber 161 for temporarily retaining the air introduced from the air supply pipe 156 is formed inside the cleaning liquid supply nozzle 150. The cleaning liquid supply nozzle 150 allows the air introduced from the upper air supply pipe 156 to pass through the air retention chamber 161 and to be ejected from the lower air outlet 158. As described above, the cleaning liquid supply nozzle 150 can discharge both the cleaning liquid and air.

  As shown in FIG. 5, a rail 170 extending along the Y direction is formed on the positive side of the cup 122 in the X direction (upward direction in FIG. 5). The rail 170 is formed, for example, from the outer side of the cup 122 on the Y direction positive direction side to the outer side of the cup 122 on the Y direction negative direction side. For example, a third arm 171 is attached to the rail 170. The third arm 171 is movable on the rail 170 by the driving unit 172. A charging rod 173 as a collecting member is supported on the third arm 171. A cleaning container 174 for the charging rod 173 is installed outside the positive side of the cup 122 in the Y direction. The charging rod 173 moves from the cleaning container 174 into the cup 122 by the movement of the third arm 171. , Can move on the surface of the wafer W. Further, the third arm 171 can be moved in the vertical direction by, for example, the drive unit 172, and the height of the charging rod 173 can be adjusted by moving the charging rod 173 up and down. In the present embodiment, the rail 170, the third arm 171 and the drive unit 172 constitute a moving mechanism for the charging rod 173.

  For example, as shown in FIGS. 5 and 8, the charging rod 173 has an elongated shape along the X direction that is equal to or longer than the diameter dimension of the wafer W. The charging rod 173 is formed in a substantially rectangular parallelepiped shape, for example, and the lower surface is flat. For example, as shown in FIG. 9, the charging rod 173 is formed in a trapezoidal shape whose vertical section is shorter at the lower base than at the upper base. The material of the charging rod 173 is formed of a conductor, for example, resin or ceramics. Inside the charging rod 173, two electrode plates 175 and 176 that face each other vertically as shown in FIGS. 9 and 10 are parallel. is set up. The electrode plates 175 and 176 are installed from one end to the other end along the longitudinal direction of the charging rod 173 as shown in FIG. Between the electrode plate 175 and the electrode plate 176, a dielectric 177, for example, an electrolytic solution, a ceramic or a plastic film is interposed. The electrode plates 175 and 176 are respectively connected to a power source 178, and the lower surface of the charging rod 173 can be charged with both positive and negative charges by applying a predetermined voltage to the electrode plates 175 and 176. In the present embodiment, the electrode plate 175, 176, the dielectric 177, and the power source 178 constitute a charging mechanism.

  The cleaning container 174 installed on the positive side in the Y direction of the cup 122 is formed in a substantially box shape, for example, as shown in FIG. 11, and can store a cleaning liquid for the charging rod 173, for example, pure water. . For example, electrode plates 180 and 181 are attached to the inner wall 174a and the outer wall 174b of the main body of the cleaning container 174, respectively. The electrode plates 180 and 181 are each connected to a power source 182, and by applying a predetermined voltage to the electrode plates 174 and 175, the inner wall 174 a of the cleaning container 174 can be charged to a desired charge. In the present embodiment, a cleaning container charging mechanism is configured by the electrode plates 180 and 181 and the power source 182.

  For example, a supply pipe 183 and a discharge pipe 184 are connected to the bottom of the cleaning container 174, and the cleaning liquid for the charging rod 173 can be supplied to or discharged from the cleaning container 174.

  Next, the process of the photolithography process performed in the coating and developing treatment system 1 configured as described above will be described.

  First, an unprocessed wafer W is taken out from the cassette C on the cassette mounting table 5 by the wafer transfer body 7 and transferred to the temperature control device 60 of the third processing unit group G3. The wafer W transferred to the temperature control device 60 is adjusted to a predetermined temperature, and then transferred to the bottom coating device 23 by the first transfer device 10 to form an antireflection film. The wafer W on which the antireflection film is formed is sequentially transferred to the heating device 92, the high-temperature heat treatment device 65, and the high-precision temperature control device 70 by the first transfer device 10, and subjected to predetermined processing in each device. Thereafter, the wafer W is transferred to the resist coating device 20, and after a resist film is formed on the wafer W, the wafer W is transferred to the pre-baking device 71 by the first transfer device 10, and then the second transfer device 11 performs peripheral processing. The wafer is sequentially transferred to the exposure device 94 and the high-precision temperature control device 83, and predetermined processing is performed in each device. Thereafter, the wafer W is transferred to an exposure apparatus (not shown) by the wafer transfer body 101 of the interface unit 4 and exposed. The wafer W after the exposure processing is transferred to the post-exposure baking device 84, for example, by the wafer transfer body 101, subjected to heat treatment, and then transferred to the high-precision temperature control device 81 by the second transfer device 11 to be heated. Adjusted. Thereafter, the resist film on the wafer W is developed by being transferred to the development processing device 30. Thereafter, the wafer W is transferred to the post-baking device 75 by the second transfer device 11, subjected to heat treatment, and then transferred to the high-precision temperature control device 63 to adjust the temperature. Then, the wafer W is transferred to the transition device 61 by the first transfer device 10 and returned to the cassette C by the wafer transfer body 7 to complete a series of photolithography steps.

  Next, the development processing performed in the above-described development processing apparatus 30 will be described in detail. FIG. 12 is a flowchart for explaining the development process. First, when the post-exposure baking is finished and the temperature-adjusted wafer W is loaded into the development processing apparatus 30, the wafer W is sucked and held on the chuck 120 as shown in FIG. Subsequently, as shown in FIG. 5, the developer supply nozzle 143 that has been waiting in the standby unit 145 moves to the Y direction positive direction side, and is a position before the end of the wafer W in the Y direction negative direction as viewed from above. Move to P1 (dotted line portion in FIG. 5). Thereafter, the developer supply nozzle 143 is lowered and brought closer to the surface of the wafer W. Thereafter, the developing solution is discharged from the developing solution supply nozzle 143, and the developing solution supply nozzle 143 discharges the developing solution while the position P2 outside the end of the wafer W on the positive side in the Y direction (dotted line in FIG. 5). Part) (FIG. 12A). At this time, a developing solution is supplied to the surface of the resist film on the wafer W to form a developing solution liquid film, and development of the resist film is started. By starting the development, for example, the exposed portion of the resist film is selectively dissolved, and a development product charged to, for example, a negative charge is generated in the developer.

  When the wafer W is developed for a predetermined time, for example, the cleaning liquid supply nozzle 150 that has been waiting in the standby unit 152 moves to the Y direction negative direction side, and before the end of the wafer W on the Y direction positive direction side as viewed from above. Move to position P2. Thereafter, the cleaning liquid supply nozzle 150 is lowered to approach the surface of the wafer W. When the cleaning liquid supply nozzle 150 is brought close to the surface of the wafer W, pure water as a development stop liquid is discharged from the discharge port 157, and the cleaning liquid supply nozzle 150 discharges pure water while discharging the pure water in the Y direction negative direction side. It moves to the position P1 outside the end of (Fig. 12 (b)). As a result, pure water is supplied to the entire surface of the wafer, the developer on the wafer W is diluted, and development of the wafer W is stopped.

  By the way, the charging rod 173 stands by in the cleaning container 174 and is charged in advance so that the lower surface side becomes, for example, a positive charge opposite to the charge of the development product. When the development of the wafer W is stopped and the cleaning liquid supply nozzle 150 is returned to the standby unit 152, the charging rod 173 moves to the Y direction negative direction side, and stops at, for example, the position P2. The charging rod 173 is lowered, and the charging rod 173 is adjusted to a height at which the lower surface of the charging rod 173 contacts the developer on the wafer W. Thereafter, the charging rod 173 moves horizontally in the Y direction negative direction, and moves from one end side to the other end side of the wafer W on the surface of the wafer W with the lower surface in contact with the developer (FIG. 12). (C)). As a result, the negatively charged development product H is attracted to and collected by the positively charged charging rod 173 as shown in FIG.

  The charging rod 173 moves to an outer position P1 on the negative side in the Y direction of the wafer W. When the developing product H in the developer on the wafer surface is collected, the charging rod 173 is used as a cleaning solution for the charging rod 173. The pure water is returned to the cleaning container 174. When the charging rod 173 is accommodated in the cleaning container 174 and immersed in pure water as shown in FIG. 11, the negative charge (the same kind of charge as the development product H) opposite to the conventional one is formed on the lower surface of the charging rod 173. Is charged. As a result, the charge of the charging rod 173 and the charge of the development product H repel each other, and the development product H is detached from the charging rod 173. Further, the inner wall 174a of the cleaning container 174 is charged with a positive charge opposite to that of the development product H, and the development product H is attracted by this charge. Thereby, the separation of the development product H from the charging rod 173 is further promoted. In this way, the development product H adhering to the charging rod 173 falls into pure water, and the charging rod 173 is washed.

  When the charging rod 173 is returned to the cleaning container 174, the cleaning liquid supply nozzle 150 moves again to the position P2. Pure water as a cleaning liquid is discharged from the discharge port 157 of the cleaning liquid supply nozzle 150. The cleaning liquid supply nozzle 150 discharges pure water on the surface of the wafer W from the end of the negative side of the wafer W in the Y direction. It moves to the position P1 on the other side (FIG. 12 (d)). As a result, the developer on the surface of the wafer W is removed from the wafer W, the developer on the wafer W is replaced with pure water, and the wafer W is cleaned.

  Subsequently, air is blown out from the air blowing port 158 of the cleaning liquid supply nozzle 150, and the cleaning liquid supply nozzle 150 blows air on the surface of the wafer W, for example, from the position P1 to the end of the wafer W on the positive side in the Y direction. To the outer position P2 (FIG. 12E). Thereby, the pure water on the surface of the wafer W is blown off and removed. Thereafter, the wafer W is unloaded from the development processing apparatus 30 and a series of development processing is completed.

  According to the above embodiment, the charging rod 173 charged with a charge different from that of the development product H is brought into contact with the developing solution on the wafer surface after development and moved in the developing solution so that the developing solution H Since the development product H is collected, the development product H in the developer can be removed before supplying pure water as a cleaning solution to the wafer W. As a result, the developed product H does not remain on the wafer W even when the wafer W is cleaned without rotation, and the wafer W can be cleaned appropriately. In addition, since most of the development product H has already been collected when pure water is supplied, it is not necessary to supply a large flow of pure water to the wafer W, and the consumption of pure water can be reduced.

  Since the developing container 30 is provided with a cleaning container 174 so that the charge of the charging rod 173 can be switched, the charge of the charging rod 173 can be changed while the charging rod 173 with the developed product H attached is immersed in pure water. Thus, the developed product H can be detached from the charging rod 173. Further, since the cleaning container 174 itself can be charged, the developing product H of the charging rod 173 is attracted by charging the inner wall surface 174a of the cleaning container 174 to a charge different from that of the development product H. The development product H can be further removed.

  In the development processing apparatus 30 described in the above embodiment, a stirring member that stirs the developer on the wafer W that has been developed may be provided. FIG. 14 shows such an example. For example, the third arm 171 of the development processing apparatus 30 supports a liquid discharge nozzle 190 as a stirring member in addition to the charging rod 173. For example, as shown in FIGS. 14 and 15, the liquid discharge nozzle 190 is formed in an elongated shape along the X direction that is the same as or longer than the diameter of the wafer W. The liquid discharge nozzle 190 and the charging rod 173 are provided in an adhering state, and the liquid discharge nozzle 190 is disposed on the moving direction (Y direction negative direction) side of the charging rod 173 when the development product H is collected. . On the lower surface of the liquid discharge nozzle 190, a slit-shaped liquid discharge port 191 for ejecting liquid from one end portion in the longitudinal direction to the other end portion is formed as shown in FIG. A liquid supply pipe 193 communicating with the liquid supply source 192 is connected to the upper part of the liquid discharge nozzle 190. In the present embodiment, pure water is stored in the liquid supply source 192, and pure water can be ejected from the liquid discharge nozzle 190.

  As shown in FIG. 16, a liquid storage chamber 194 that temporarily stores the liquid introduced from the liquid supply pipe 193 is formed inside the liquid discharge nozzle 190. The liquid discharge nozzle 190 allows the liquid introduced from the upper liquid supply pipe 193 to flow through the liquid storage chamber 194 and can be uniformly ejected downward from the lower liquid discharge ports 191.

  When the development of the wafer W is completed and the development product H in the developer is collected, the liquid discharge nozzle 190 and the charging rod 173 are moved to the Y direction negative direction side by the third arm 171. , The wafer W moves to a position P2 outside the end of the wafer W on the positive side in the Y direction. Thereafter, pure water is ejected from the liquid ejection port 191 of the liquid ejection nozzle 190, and in this state, the liquid ejection nozzle 190 and the charging rod 173 move on the wafer W and move outward on the negative side of the wafer W in the Y direction. To position P1. At this time, as shown in FIG. 16, the pure water ejected from the liquid discharge port 191 collides with the developer on the wafer W to stir the developer, and the charging rod 173 immediately behind the developer is in contact with the developer. To move through the developer. By doing so, the development product H in the developer is rolled up and collected by the charging rod 173 immediately after that. In such a case, for example, the development product H deposited on the bottom of the developer can be collected.

  In the above-described embodiment, the liquid discharge nozzle 190 and the charging rod 173 are supported by the same third arm 171 and provided side by side. However, the liquid discharge nozzle 190 and the charging rod 173 may be supported by different arms. . In such a case, an arm that exclusively supports the liquid discharge nozzle 190 may be provided on the rail 170.

  Further, for example, the liquid discharge nozzle 190 may be used also as the charging rod 173. In such a case, for example, as shown in FIG. 17, the material of the lower portion 195a having the liquid discharge port 191 of the liquid discharge nozzle 195 is formed of a conductor such as aluminum. A power supply 196 that can apply a predetermined voltage is connected to the liquid discharge nozzle 195. By applying a voltage from the power source 196, the lower portion 195a can be charged with a predetermined charge. Since the other configuration of the liquid discharge nozzle 195 is the same as that of the liquid discharge nozzle 190 described above, the same reference numerals are used for overlapping portions, and description thereof is omitted.

  When the development of the wafer W is completed and the development product H in the developer is collected, for example, the liquid discharge nozzle 195 reaches the position P2 outside the end of the wafer W on the positive side in the Y direction. The lower part 195a of the liquid discharge nozzle 195 is charged with a charge different from that of the development product H in the developer. Thereafter, the liquid discharge nozzle 195 moves to the Y direction negative direction side, pure water is ejected from the liquid discharge port 191, and the liquid discharge nozzle 195 is in the Y direction negative direction of the wafer W while the lower portion 195a is in contact with the developer. It moves to the position P1 outside the side end. At this time, the developer is stirred by the ejection of pure water, the development product H at the bottom of the developer is rolled up, and the rolled-up development product H is collected by the charged lower portion 195a. Also in such a case, the developer is stirred, and for example, the development product H deposited on the bottom of the developer is efficiently collected.

  The liquid discharge nozzles 190 and 195 as the stirring members described above may also be used as the cleaning liquid supply nozzle 150 for cleaning the wafer W. In such a case, for example, stirring of the developing solution, collection of the development product H, and supply of the cleaning solution to the wafer W can be performed using the same nozzle. As a result, the development processing apparatus 30 can be reduced in size.

  In the above embodiment, the lower surface of the charging rod 173 in contact with the developer is flat. However, for example, as shown in FIG. 18, the lower surface of the charging rod 173 may be convexly curved downward. Further, as shown in FIG. 19, for example, a plurality of point-shaped convex portions 200 may be formed on the lower surface of the charging rod 173, and the lower surface of the charging rod 173 may be uneven. In such a case, since the contact area between the charging rod 173 and the developing solution becomes large, it becomes easier to collect the development product H of the developing solution accordingly. Furthermore, as shown in FIG. 20, the charging rod 173 may have a blade plate 201 as a blade portion protruding in the depression direction of the moving direction of the charging rod 173 (Y direction negative direction) on the lower surface. In this case, the charging rod 173 can collect the development product H in the developing solution while stirring the developing solution by the blade plate 201 while moving on the wafer surface. Therefore, for example, the development product H that sinks to the bottom of the developer can also be collected.

  A charging mechanism may be attached to the chuck 120 described in the above embodiment. FIG. 21 shows such an example. For example, a thin disk-shaped electrode plate 205 is attached to the upper surface of the chuck 120. For example, a conductor such as iron or copper is used as the material of the electrode plate 205. The electrode plate 205 is connected to a power source 206 that can apply a predetermined voltage to the electrode plate 205. By applying a voltage from the power source 206, the electrode plate 205 can be charged to a predetermined charge.

  When the developing rod on the wafer W after the development is brought into contact with the charging rod 173 to collect the development product H, the electrode plate 205 of the chuck 120 has the same kind as the development product H in the developer. Negative charge is charged. As a result, the charge on the wafer surface becomes negative, and the positively charged development product H in the developer repels the wafer surface. Thereby, for example, the development product H that has been at the bottom of the developer floats to the surface side of the developer, so that the charging rod 173 easily collects the development product H, and the development product H becomes more effective. It is collected. In the present embodiment, the electrode member 206 and the power source 206 constitute a holding member charging mechanism.

  In the above embodiment, the charging mechanism is attached to the chuck 120, but a vibration mechanism may be attached. FIG. 22 shows such an example, and an ultrasonic transducer 210 that vibrates by power feeding is attached to the chuck 120. The ultrasonic transducer 210 can be operated by power supply from the power source 211. When the charged rod 173 is brought into contact with the developer on the wafer W after the development is completed and the development product H is collected, the ultrasonic vibrator 210 is operated by the power supply from the power supply 211, and the chuck 120 is set in a predetermined manner. It is vibrated at a frequency of. By doing so, the developer is stirred and the development product H deposited at the bottom of the developer floats, so that the development product H in the developer is effectively collected by the charging rod 173. In the present embodiment, the ultrasonic vibrator 210 and the power source 211 constitute a vibration mechanism.

  The cleaning container 174 described in the above embodiment is for immersing the charging rod 173 in pure water. However, the cleaning vessel 174 may discharge pure water as a cleaning liquid to the charging rod 173. In such a case, for example, as shown in FIG. 23, pure water pipes 221 communicating with the pure water supply source 220 are formed on the upper side walls of the cleaning container 174. In the pure water pipe 221, pure water discharge ports 222 are formed as a plurality of cleaning liquid discharge ports for discharging pure water toward the inside of the container. The pure water discharge ports 222 are provided on both sides of the charging rod 173 accommodated in the cleaning container 174, for example, so as to correspond to one end portion of the charging rod 173 along the longitudinal direction of the charging rod 173. ing. When the charging rod 173 is cleaned, the charging rod 173 accommodated in the cleaning container 174 is charged with a negative charge of the same type as the development product H, and each pure water discharge port 222 is charged to the charging rod 173. Pure water is discharged from The development product H is washed away from the charging rod 173 by discharging the pure water. Even in such a case, the development product H adhering to the charging rod 173 can be appropriately removed. In this example, the charging mechanism of the cleaning container 174 main body may or may not be provided.

  The charging rod 173 as the charging member described in the above embodiment collects the development product H on the wafer surface by linearly moving from one end of the wafer W to the other end. However, the development product H on the wafer surface may be collected by moving on the diameter of the wafer surface and rotating on the diameter. Further, the charging rod 173 described in the above embodiment has an elongated shape, but may have another shape. For example, the charging member may be formed in a circular shape that is the same as or larger than the wafer W.

  The example of the embodiment of the present invention has been described above, but the present invention is not limited to this example and can take various forms. For example, the cleaning liquid for cleaning the wafer and the cleaning liquid for cleaning the charging rod 173 described in the above embodiments are pure water, but other liquids may be used. In the above embodiment, the liquid for stirring the developer is pure water, but other liquid may be used. In the above embodiment, the cleaning liquid supply nozzle 150 is provided with an air blowing function for scattering the cleaning liquid. However, the air may be blown using another nozzle. The above embodiment is an example of developing the wafer W, but the present invention is used when developing other substrates such as an FPD (flat panel display) and a photomask mask reticle other than the wafer. Is also applicable.

  The present invention is useful when cleaning a substrate after development without rotating the substrate.

It is a top view which shows the outline of a structure of the coating and developing treatment system in this Embodiment. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a development processing apparatus. It is a top view which shows the outline of a structure of a development processing apparatus. It is a perspective view of a cleaning liquid supply nozzle. It is a longitudinal cross-sectional view of the cleaning liquid supply nozzle as viewed from the X direction. It is a perspective view of a charging rod. It is a longitudinal cross-sectional view of the charging rod seen from the X direction. It is a longitudinal cross-sectional view of the charging rod seen from the Y direction. It is the longitudinal cross-sectional view of the washing | cleaning container seen from the X direction. It is explanatory drawing of the flow of a development process. It is explanatory drawing which shows a mode that a development product is collected by the charging rod. It is a top view which shows the outline of a structure of the development processing apparatus provided with the liquid discharge nozzle. It is a perspective view of the integrated liquid discharge nozzle and charging rod. It is explanatory drawing which shows a mode that a development product is collected by the charging rod. It is a longitudinal cross-sectional view of the liquid discharge nozzle used also as a charging rod. It is a longitudinal cross-sectional view of the charging rod whose lower surface is curved. It is a longitudinal cross-sectional view of the charging rod which has an unevenness | corrugation in the lower surface. It is a longitudinal cross-sectional view of the charging rod having a blade plate formed on the lower surface. It is a side view of the chuck | zipper with which the charging mechanism was attached. It is a side view of the chuck | zipper to which the vibration mechanism was attached. It is explanatory drawing of the longitudinal cross-section of the washing | cleaning container which has a pure water discharge outlet.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Application | coating development processing system 30 Development processing apparatus 120 Chuck 143 Developer supply nozzle 150 Cleaning solution supply nozzle 173 Charging stick H Development product W Wafer

Claims (18)

A development processing apparatus for developing a substrate,
A holding member for holding the substrate;
A developer supply nozzle for supplying a developer onto the substrate held by the holding member and forming a developer film on the surface of the substrate;
A collecting member that contacts the developer on the substrate in a charged state and collects a development product in the developer using static electricity;
A charging mechanism for charging the collecting member to a predetermined type of charge;
A moving mechanism for bringing the collecting member into contact with the developer on the substrate and moving the collecting member along the surface of the substrate in the contact state;
A development processing apparatus, comprising: a cleaning liquid supply nozzle that supplies a cleaning liquid onto the substrate held by the holding member. 2. The development processing apparatus according to claim 1, wherein the collecting member is formed in an elongated shape that is equal to or longer than a dimension of the substrate. The development processing apparatus according to claim 2, wherein a lower surface of the collecting member that contacts the developer is convexly curved downward. The development processing apparatus according to claim 2, wherein the collecting member has irregularities formed on a lower surface in contact with the developer. A blade portion for stirring the developer is formed on the lower surface of the collecting member that is in contact with the developer.
The development processing apparatus according to claim 2, wherein the blade portion is formed from a lower surface of the collecting member toward a depression direction on a moving direction side of the collecting member. 6. The development processing apparatus according to claim 1, further comprising a stirring member that supplies a liquid to the developer on the substrate held by the holding member to stir the developer. The stirring member includes a liquid discharge port having a length equal to or longer than the dimension of the substrate,
The development processing apparatus according to claim 6, further comprising a moving mechanism that moves the stirring member from one end of the substrate to the other end along the surface of the substrate. The stirring member and the collecting member are provided side by side,
The development processing apparatus according to claim 7, wherein the stirring member is disposed on a moving direction side of the collecting member. The stirring member is also used as the collecting member;
The liquid discharge port is formed on the lower surface of the stirring member,
The development processing apparatus according to claim 7, wherein the charging mechanism can charge a lower surface portion of the stirring member. The development processing apparatus according to claim 6, wherein the stirring member is also used as the cleaning liquid supply nozzle. The development processing apparatus according to claim 1, further comprising a charging mechanism for a holding member that charges the holding member. The development processing apparatus according to claim 1, further comprising a vibration mechanism that vibrates the holding member. The development processing apparatus according to claim 1, further comprising a cleaning container that houses and cleans the collecting member. 14. The development processing apparatus according to claim 13, wherein the charging mechanism of the collecting member can charge the collecting member to both kinds of charges. The cleaning container is configured to be able to store a cleaning liquid for a collecting member,
The development processing apparatus according to claim 14, further comprising a cleaning container charging mechanism that charges the cleaning container main body. The development processing apparatus according to claim 14, wherein the cleaning container includes a cleaning liquid discharge port that discharges a cleaning liquid for the collecting member to the collected collecting member. A development processing method for developing a substrate,
Developing a substrate by supplying a developer to the substrate;
A step of contacting a developing member on the substrate with a collecting member charged to a charge opposite to that of the developing product in the developing solution after the substrate is developed, and collecting the developing product in the developing solution;
And a step of cleaning the substrate by supplying a cleaning liquid to the entire surface of the substrate. The development processing method according to claim 17, further comprising a step of stirring the developer on the substrate before collecting the development product.

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