JP2006060106A - Lead member and surface mounted semiconductor device - Google Patents

Lead member and surface mounted semiconductor device Download PDF

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JP2006060106A
JP2006060106A JP2004241908A JP2004241908A JP2006060106A JP 2006060106 A JP2006060106 A JP 2006060106A JP 2004241908 A JP2004241908 A JP 2004241908A JP 2004241908 A JP2004241908 A JP 2004241908A JP 2006060106 A JP2006060106 A JP 2006060106A
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lead
lead member
semiconductor device
bent
soldered
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Hiroyuki Sekine
浩幸 関根
Hideo Yamaguchi
日出男 山口
Masaru Kuno
勝 久野
Kenji Matsuda
剣司 松田
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Origin Electric Co Ltd
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Origin Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure of a lead member capable of realizing a manufacturing method for inexpensively manufacturing, and a small surface mounted semiconductor device using the lead member resistant to the occurrence of leakage between electrodes when packaged. <P>SOLUTION: The lead member to be used in an electronic component consists of a base, a bent part bent by a certain angle in the middle of the base, and a flat part further bent from the bent part to be in parallel to the base. The lead member is bent such that T2=2×T1 and T1=T3 where a distance between the upper surface of the base and the lower surface of the flat part on the lead member is T1, the thickness of the flat part of the lead member is T2, and a distance between the lower surface of the base and the lower surface of the flat part is T3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、背高の低い薄型の電子部品に用いるのに適したリード部材、及びそのリード部材を用いた表面実装型半導体装置に関する。
The present invention relates to a lead member suitable for use in a thin electronic component having a low height, and a surface mount semiconductor device using the lead member.

携帯電話に代表される小型で、高性能の小型電子機器は、多数の非常に小型化された電子部品が実装されているプリント基板を備えている。そのような小型電子機器にあっては、年々、更なる小型化、高機能化の方向に向かっており、これに伴って高密度実装の要求が高まり、小型電子部品についても更に薄型化、小型化の要求が強まっている。前述の小型電子部品の内の一部分は、ダイオード、トランジスタ（ＦＥＴ）などの表面実装型半導体装置であり、小型電子機器とはいえその電力を扱う半導体装置は、要求される電流容量などの面から現在ではＩＣ化が難しく、個別に製造される一般的なガルウィング構造の表面実装型半導体装置が用いられている。このガルウィング構造の表面実装型半導体装置は、半導体素子を被覆してなるモールド樹脂の両端から延びるリードを表面実装に適するよう曲げた構造のものである。   A small and high-performance small electronic device typified by a mobile phone includes a printed circuit board on which a large number of extremely miniaturized electronic components are mounted. In such small electronic devices, the trend toward further miniaturization and higher functionality has been made year by year, and with this, the demand for high-density mounting has increased, and even smaller electronic components have become thinner and smaller. There is an increasing demand for conversion. A part of the above-mentioned small electronic components is a surface mount type semiconductor device such as a diode or a transistor (FET), and a semiconductor device that handles the power of the electronic device although it is a small electronic device is from the aspect of required current capacity. At present, it is difficult to make an IC, and a surface mount semiconductor device having a general gull wing structure manufactured individually is used. This surface mounted semiconductor device having a gull wing structure has a structure in which leads extending from both ends of a mold resin covering a semiconductor element are bent so as to be suitable for surface mounting.

かかる従来のガルウィング構造の表面実装型半導体装置よりも更に薄型化するのに適した表面実装型半導体装置の構造についても既に提案されており、長さ、厚みが１ｍｍ弱という薄型の個別に製造される表面実装型半導体装置も実現されている。代表的なものとして、適当に曲げられた一対のリード電極間に半導体素子を位置させ、前記一対のリード電極の平坦部分がモールド樹脂の底面に露出する構造にして薄型化と小型化とを図ったフラット構造の表面実装型半導体装置が提案されている（例えば、特許文献１参照）。その他にも、特許文献１と同様な考え方で、構造の異なるフラット構造の表面実装型半導体装置も提案されている（例えば、特許文献２参照）。   A structure of a surface mount semiconductor device suitable for further thinning than the conventional surface mount semiconductor device having a conventional gull wing structure has already been proposed, and is manufactured individually as thin as a length and a thickness of less than 1 mm. A surface mount semiconductor device is also realized. As a typical example, a semiconductor element is positioned between a pair of appropriately bent lead electrodes, and a flat portion of the pair of lead electrodes is exposed on the bottom surface of the mold resin to reduce the thickness and size. A flat surface mount semiconductor device has been proposed (see, for example, Patent Document 1). In addition, a surface mount semiconductor device having a flat structure with a different structure has been proposed based on the same concept as that of Patent Document 1 (see, for example, Patent Document 2).

しかし、特許文献１、２のフラット構造の表面実装型半導体装置を製造にするに当たっては、専用のトランスファーモールド装置が新たに必要であり、時間とコストとがかかる。また、トランスファーモールドの場合には、モールド部分のランナー、ゲート部分、スポット部分など不要な廃棄部分が生じ、これら部分のモールド樹脂を廃棄処分するので、コスト的にも、環境保護の面からも好ましくない。特に、特許文献２の発明のものでは、量産に不適な構造であるなどの問題がある。   However, when manufacturing the flat surface mount semiconductor device of Patent Documents 1 and 2, a dedicated transfer mold apparatus is newly required, which takes time and cost. In the case of transfer molding, unnecessary waste parts such as runners, gate parts and spot parts of the mold part are generated, and the mold resin in these parts is discarded, which is preferable from the viewpoint of cost and environmental protection. Absent. In particular, the invention of Patent Document 2 has a problem such as an unsuitable structure for mass production.

そして、上述のような問題点を抱えながら表面実装型半導体装置の薄型化、小型化が進んでいるが、小型化が極限まで進み、その長さ(幅)が１ｍｍ未満になってくると、電極間の間隔が０．５〜０．６ｍｍ程度と小さくなるものもあり、電気絶縁上の問題が生じることがある。表面実装型半導体装置の半導体製造の過程では、クリーンルームにおいて組み立て作業が行われる場合や、携帯電話のような小型機器などに組み込まれ、使用条件が良い場合には故障などのトラブルが生じないが、湿度が高い、あるいは水分の多い雰囲気で使用したり、帯電が生じる条件などで用いた場合には、表面実装型半導体装置の電極間でリークが生じ、電気絶縁性が低下するので、小型機器が破壊されないまでも、一時的に故障したり、動作が一時的に不安定になるなどの問題が生じることがある。
特開平６−１２５０２１号公報 特開２００３−１９７８２８公報 And while having the above-mentioned problems, surface mounting semiconductor devices are becoming thinner and smaller, but when the miniaturization progresses to the limit and its length (width) becomes less than 1 mm, In some cases, the distance between the electrodes is as small as about 0.5 to 0.6 mm, which may cause problems in electrical insulation. In the process of manufacturing semiconductors for surface-mount semiconductor devices, when assembly work is performed in a clean room or built into a small device such as a mobile phone, troubles such as failure do not occur if the usage conditions are good. When used in an atmosphere with high humidity or a lot of moisture, or when it is used under conditions that cause electrification, leakage occurs between the electrodes of the surface-mount semiconductor device, resulting in a decrease in electrical insulation. Even if it is not destroyed, problems such as a temporary failure or an unstable operation may occur.
JP-A-6-1225021 JP 2003-197828 A

本発明は、上記課題に鑑みて、前述のような問題点を解決し得る薄型の表面実装型半導体装置を、従来の樹脂封止装置をそのまま使って製造でき、かつ低コストで製造し得る製造方法を実現できるリード部材の構造、及びそのリード部材を用いた表面実装型半導体装置を提供することを目的としている。
In view of the above problems, the present invention can manufacture a thin surface mount semiconductor device that can solve the above-described problems by using a conventional resin sealing device as it is, and can be manufactured at low cost. An object of the present invention is to provide a lead member structure capable of realizing the method and a surface-mount type semiconductor device using the lead member.

前記課題を解決するために、第１の発明は、電子部品に用いられるリード部材において、前記リード部材は、基の部分と、該基の部分の途中からある角度で曲げられた曲げ部分と、その曲げ部分から更に曲げられて前記基の部分と平行になるように曲げられた平坦部分とからなり、前記リード部材における前記基の部分の上面と前記平坦部分の下面との間の距離をＴ１とし、前記リード部材の前記平坦部分の厚みをＴ２とし、前記基の部分の下面と前記平坦部分の前記下面との間の距離をＴ３とするとき、Ｔ２＝２×Ｔ１、Ｔ１＝Ｔ３となるように、前記リード部材が曲げられていることを特徴とするリード部材を提供するものである。   In order to solve the above-described problem, the first invention is a lead member used in an electronic component, wherein the lead member includes a base portion and a bent portion bent at an angle from the middle of the base portion. A flat portion bent further from the bent portion and parallel to the base portion, and the distance between the upper surface of the base portion and the lower surface of the flat portion of the lead member is defined as T1. Where T2 is the thickness of the flat portion of the lead member, and T3 is the distance between the lower surface of the base portion and the lower surface of the flat portion, T2 = 2 × T1, and T1 = T3. Thus, the lead member is provided, wherein the lead member is bent.

第２の発明は、請求項１に記載のリード部材を一対用いている表面実装型半導体装置において、前記リード部材を、それぞれの前記基の部分が僅かな距離を隔てて位置するように配置すると共に、前記リード部材の一方に半導体素子の一方面を搭載してハンダ付けし、前記半導体素子の他方面を、直接又は間接的に前記リード部材の他方にハンダ付けし、前記リード部材の少なくとも一方の前記基の部分が、０．１ｍｍ〜０．５ｍｍの範囲内で露出するように電気絶縁性樹脂で被覆されていることを特徴とする表面実装型半導体装置を提供するものである。   According to a second aspect of the present invention, in the surface mount semiconductor device using a pair of lead members according to claim 1, the lead members are arranged such that the respective base portions are located at a slight distance from each other. In addition, one surface of the semiconductor element is mounted on one of the lead members and soldered, and the other surface of the semiconductor element is directly or indirectly soldered to the other of the lead members, and at least one of the lead members The surface mount semiconductor device is characterized in that the base portion is covered with an electrically insulating resin so as to be exposed within a range of 0.1 mm to 0.5 mm.

第３の発明は、請求項１に記載のリード部材を一対用いている表面実装型半導体装置において、前記リード部材を、それぞれの前記基の部分が僅かな距離を隔てて位置するように配置すると共に、前記リード部材の一方に半導体素子の一方面を搭載してハンダ付けし、前記半導体素子の他方面を、直接又は間接的に前記リード部材の他方にハンダ付けし、前記リード部材の前記曲げ部分までが前記電気絶縁樹脂で被覆され、前記リード部材の前記平坦部分が前記電気絶縁性樹脂から露出するように被覆されていることを特徴とする表面実装型半導体装置を提供するものである。   According to a third aspect of the present invention, in the surface-mount type semiconductor device using a pair of lead members according to claim 1, the lead members are arranged such that the respective base portions are located at a slight distance from each other. In addition, one side of the semiconductor element is mounted on one side of the lead member and soldered, and the other side of the semiconductor element is soldered directly or indirectly to the other side of the lead member, and the bending of the lead member is performed. The present invention provides a surface-mount type semiconductor device in which up to a portion is covered with the electrically insulating resin and the flat portion of the lead member is covered so as to be exposed from the electrically insulating resin.

第４の発明は、請求項２又は請求項３の発明において、前記半導体素子の他方面は、結線部材にハンダ付けされ、かつ該結線部材は前記リード部材の他方にハンダ付けされており、前記結線部材は、前記半導体素子の他方面にハンダ付けされる部分と前記リード部材の他方にハンダ付けされる部分との間に弾性曲げ部分を備えることを特徴とする表面実装型半導体装置を提供するものである。
According to a fourth invention, in the invention of claim 2 or claim 3, the other surface of the semiconductor element is soldered to a connection member, and the connection member is soldered to the other of the lead members, The connection member includes an elastic bending portion between a portion soldered to the other surface of the semiconductor element and a portion soldered to the other surface of the lead member. Is.

前記第１の発明ないし第４の発明によれば、従来のトランスファーモールド装置をそのまま使え、低コストで製造し得る製造方法を実現できるリード部材の構造、及びそのリード部材を用いた小型で、実装したときに電極間でリークの発生し難い表面実装型半導体装置を提供することができる。また、リード部材を予め所定の形状に曲げておくので、リード部材の折り曲げ時に不要な応力が半導体素子にかからず、折り曲げの精度を高くすることができる。特に、前記第４の発明によれば、結線部材がその両端の中途に曲げ弾性部分を有しているので、結線部材とリード部材とのハンダ付け時などに、機械的応力が半導体素子に加わらないので、信頼性の高い表面実装型半導体装置を提供することができる。
According to the first to fourth aspects of the present invention, the structure of the lead member that can realize a manufacturing method that can be manufactured at a low cost by using the conventional transfer mold apparatus as it is, and a small-sized and mounted using the lead member. Thus, it is possible to provide a surface mount semiconductor device in which leakage between electrodes hardly occurs. Further, since the lead member is bent in a predetermined shape in advance, unnecessary stress is not applied to the semiconductor element when the lead member is bent, and the bending accuracy can be increased. In particular, according to the fourth aspect of the invention, since the connecting member has the bending elastic portion in the middle of both ends, mechanical stress is applied to the semiconductor element when soldering the connecting member and the lead member. Therefore, a highly reliable surface mount semiconductor device can be provided.

先ず、本発明を実施するための最良の形態である実施形態１の表面実装型半導体装置の製造方法について説明する。
[実施形態１]
図１により本発明の実施形態１について説明する。図１は、本発明に係る表面実装型半導体装置１００の概観の実施形態１を説明する図である。この実施形態１では、図示しない銅又は銅をニッケルメッキで被覆した金属など導電性の良好な金属材料からなるリードフレームを用いて、その搭載位置に不図示の半導体素子をハンダ付けし、エポキシ系樹脂のようなモールド樹脂１でモールドした後、リードフレームを所定箇所で切断して個々の表面実装型半導体装置１００としたものである。表面実装型半導体装置１００は、上方から見てほぼ長方形である立方体であり、図１に示すように、長手方向の両端からリード部材２、３が延びている。 First, a method for manufacturing a surface-mount type semiconductor device according to the first embodiment, which is the best mode for carrying out the present invention, will be described.
[Embodiment 1]
Embodiment 1 of the present invention will be described with reference to FIG. FIG. 1 is a diagram for explaining a first embodiment of an overview of a surface-mounted semiconductor device 100 according to the present invention. In the first embodiment, a semiconductor element (not shown) is soldered to the mounting position using a lead frame made of a metal material having good conductivity such as copper (not shown) or a metal coated with nickel by nickel plating, and epoxy type After molding with a mold resin 1 such as a resin, the lead frame is cut at a predetermined location to obtain individual surface mount semiconductor devices 100. The surface-mounted semiconductor device 100 is a cube that is substantially rectangular when viewed from above, and lead members 2 and 3 extend from both ends in the longitudinal direction, as shown in FIG.

本発明に係るリード部材２、３は、図示しないリードフレームのフレーム部から同一高さで向き合うように延びているリード部をモールド樹脂１で封止した後に前記フレーム部から切断したものである。リード部材２、３は、不図示のリードフレームの段階で図示のように曲げられているのが好ましい。リード部材２、３は、モールド樹脂１の相対する側面１ａ、１ｂに対してほぼ直角に延びており、それら直角に延びている部分、及びその部分からモールド樹脂１内部に延びる部分を含む基の部分２ａ、３ａを備える。更に、リード部材２、３は、モールド樹脂１の側面１ａ、１ｂから外側に直角に延びている一部分の基の部分２ａ、３ａからある角度で曲げられた曲げ部分２ｂ、３ｂ、及びこれら曲げ部分２ｂ、３ｂからそれぞれ基の部分２ａ、３ａと平行になるように曲げられた平坦部分２ｃ、３ｃを有する。なお、曲げ部分２ｂ、３ｂの両側の曲げはＲを有するように丸く曲げられていても勿論よい。   The lead members 2 and 3 according to the present invention are formed by sealing a lead portion extending from a frame portion of a lead frame (not shown) at the same height with the mold resin 1 and then cutting the lead portion from the frame portion. The lead members 2 and 3 are preferably bent as shown at the stage of a lead frame (not shown). The lead members 2 and 3 extend substantially at right angles to the opposite side surfaces 1a and 1b of the mold resin 1, and include a portion extending at right angles and a portion extending from the portion into the mold resin 1 inside. Part 2a, 3a is provided. Furthermore, the lead members 2 and 3 are bent portions 2b and 3b which are bent at an angle from a portion of the base portions 2a and 3a extending at right angles from the side surfaces 1a and 1b of the mold resin 1, and these bent portions. 2b and 3b have flat portions 2c and 3c bent so as to be parallel to the base portions 2a and 3a, respectively. Of course, the bends on both sides of the bent portions 2b and 3b may be rounded so as to have R.

モールド樹脂１の側面１ａ、１ｂから曲げ部分２ｂ、３ｂまでにおける基の部分２ａ、３ａの下面の真っ直ぐな部分の長さをＬ１とし、リード部材２、３の厚みはほぼ同一であって、Ｔ１とする。リード部材２、３の基の部分２ａ、３ａの上面と平坦部分２ｃ、３ｃの下面との間の寸法をＴ２とし、基の部分２ａ、３ａの下面とモールド樹脂１の下面との間のモールド樹脂１の厚みをＴ３とする。長さＬ１は、リード部材２、３近傍の金型の厚み以上の値を有し、この実施形態では０．１ｍｍ〜０．５ｍｍの範囲の長さとする。リード部材２、３近傍の金型の厚みが０．１ｍ未満では、金型が変形し易いために、金型の設計、及び樹脂モールド工程に厳格性が要求され、樹脂モールド時に相当な注意を払っても、金型の寿命が短くなり、好ましいトランスファーモールドを行うことができないなどの問題がある。また、リード部材２、３近傍の金型の厚みが０．５ｍｍを越える場合には、モールド樹脂１の下面１ｃとリード部材２、３の平坦部分２ｃ、３ｃの下面とが同一高さになるように設計してあるのにもかかわらず、外力などによって平坦部分２ｃ、３ｃの平坦性が損なわれることがあり、この表面実装型半導体装置１００の実装時に問題が生じることがあるから好ましくない。   The length of the straight portion of the lower surface of the base portion 2a, 3a from the side surface 1a, 1b to the bent portion 2b, 3b of the mold resin 1 is L1, the thickness of the lead members 2, 3 is substantially the same, and T1 And The dimension between the upper surfaces of the base portions 2a and 3a of the lead members 2 and 3 and the lower surfaces of the flat portions 2c and 3c is T2, and the mold is formed between the lower surfaces of the base portions 2a and 3a and the lower surface of the mold resin 1. The thickness of the resin 1 is T3. The length L1 has a value equal to or greater than the thickness of the mold in the vicinity of the lead members 2 and 3, and in this embodiment, the length is in the range of 0.1 mm to 0.5 mm. If the thickness of the mold in the vicinity of the lead members 2 and 3 is less than 0.1 m, the mold is likely to be deformed. Therefore, strict design is required for the mold design and the resin molding process. Even if it pays, there exists a problem that the lifetime of a metal mold | die becomes short and preferable transfer molding cannot be performed. When the thickness of the mold near the lead members 2 and 3 exceeds 0.5 mm, the lower surface 1c of the mold resin 1 and the lower surfaces of the flat portions 2c and 3c of the lead members 2 and 3 have the same height. In spite of such a design, the flatness of the flat portions 2c and 3c may be impaired by an external force or the like, which may cause a problem when the surface-mount semiconductor device 100 is mounted.

リード部材２、３の基の部分２ａ、３ａの上面と平坦部分２ｃ、３ｃの下面との間の寸法Ｔ２が、リード部材２、３の厚み、つまりその平坦部分２ｃ、３ｃの厚みＴ１の２倍になるように、曲げ部分２ｂ、３ｂは曲げられている。そして、基の部分２ａ、３ａの下面とモールド樹脂１の下面との間のモールド樹脂１の厚みＴ３がリード部材２、３の厚みＴ１と等しくなるように樹脂モールドが行われることによって、モールド樹脂の下面１ｃとリード部材２、３の平坦部分２ｃ、３ｃの下面とは同一水平面に存在することになる。このように、リード部材２、３の双方ともがＴ１＝Ｔ３になるように曲げ部分２ｂ、３ｂが形成されているので、金型が複雑にならずに安定した樹脂モールドを行うことができ、しかもリード部材となる部分が予め本発明のように曲げられているリードフレーム（図示せず）でも容易に樹脂モールドを行うことができる。   The dimension T2 between the upper surfaces of the base portions 2a and 3a of the lead members 2 and 3 and the lower surfaces of the flat portions 2c and 3c is 2 of the thickness of the lead members 2 and 3, that is, the thickness T1 of the flat portions 2c and 3c. The bent portions 2b and 3b are bent so as to be doubled. Then, the resin molding is performed so that the thickness T3 of the mold resin 1 between the lower surfaces of the base portions 2a and 3a and the lower surface of the mold resin 1 is equal to the thickness T1 of the lead members 2 and 3, thereby obtaining the mold resin. The lower surface 1c of the lead member 2 and the flat surfaces 2c of the lead members 2 and 3 are present on the same horizontal plane. Thus, since the bent portions 2b and 3b are formed so that both of the lead members 2 and 3 are T1 = T3, a stable resin mold can be performed without complicating the mold, Moreover, resin molding can be easily performed even with a lead frame (not shown) in which a portion to be a lead member is bent in advance as in the present invention.

[実施形態２]
図２に示す実施形態２にかかる表面実装型半導体装置２００は、図１に示した表面実装型半導体装置１００のモールド樹脂１の内部構造の一例を示している。リード部材２、３の曲げ構造及び寸法は図1のものと同じであり、モールド樹脂１との関係も同じであるが、リード部材３の基の部分３ａの上面には、半導体素子４が通常の方法でハンダ付けされている。半導体素子４の上面は結線部材５の一端がハンダ付けされ、結線部材５の他端はリード部材２の基の部分２ａの上面にハンダ付けされる。半導体素子４は、ＰＮ接合を有するプレーナー型又はメサ型のダイオードチップ、ショットキーバリアダイオード（ＳＢＤ）素子、あるいはＦＥＴチップ又はＩＧＢＴチップなどである。 [Embodiment 2]
A surface-mount semiconductor device 200 according to the second embodiment shown in FIG. 2 shows an example of the internal structure of the mold resin 1 of the surface-mount semiconductor device 100 shown in FIG. The bending structures and dimensions of the lead members 2 and 3 are the same as those in FIG. 1 and the relationship with the mold resin 1 is the same. However, the semiconductor element 4 is usually placed on the upper surface of the base portion 3a of the lead member 3. It is soldered by the method of One end of the connection member 5 is soldered to the upper surface of the semiconductor element 4, and the other end of the connection member 5 is soldered to the upper surface of the base portion 2 a of the lead member 2. The semiconductor element 4 is a planar or mesa diode chip having a PN junction, a Schottky barrier diode (SBD) element, an FET chip, or an IGBT chip.

リード部材３の基の部分３ａには、特に目新しくないが、小貫通孔３ｈが形成されている。この小貫通孔３ｈは、リード部材２、３の基の部分２ａ、３ａの下面を覆うモールド樹脂１が薄いために剥がれ易いという問題点を解決するためのものである。小貫通孔３ｈは、リード部材３の基の部分３ａの下側のモールド樹脂１を上側のモールド樹脂１に接続する働きを行う。同様な働きを行う小貫通孔５ｈが結線部材５にも形成されている。半導体素子４の上面にハンダ付けされる結線部材５の一端にはプレスなどによって貫通孔５Hが形成され、図示しないハンダ材料が貫通孔５Hを満たし、ハンダ付け強度を増大させる。なお、この実施形態においては、表面実装型半導体素子２００の背高を極力低くするために、下記に例示する好ましい結線部材そのものを用いていないが、類似した構造の結線部材５を用いている。   A small through hole 3h is formed in the base portion 3a of the lead member 3 although it is not particularly novel. The small through holes 3h are for solving the problem that the mold resin 1 covering the lower surfaces of the base portions 2a and 3a of the lead members 2 and 3 is easily peeled off because of being thin. The small through hole 3 h serves to connect the lower mold resin 1 of the base portion 3 a of the lead member 3 to the upper mold resin 1. A small through hole 5 h that performs the same function is also formed in the connection member 5. A through hole 5H is formed at one end of the connecting member 5 soldered to the upper surface of the semiconductor element 4 by a press or the like, and a solder material (not shown) fills the through hole 5H, thereby increasing the soldering strength. In this embodiment, in order to make the height of the surface-mounted semiconductor element 200 as low as possible, the preferred connection member itself exemplified below is not used, but the connection member 5 having a similar structure is used.

結線部材５の好ましい二つの例について、図３、図４によって説明する。図３（Ａ）は結線部材５の斜視図であり、図３（Ｂ）は側面図である。図２に示したリード部材２の平坦部分２ｃの上面にハンダ付けされる平坦なハンダ付け部５ａと、半導体素子４の厚みとハンダ層の厚みとの和の寸法よりも上方まで上がる上昇傾斜部５ｂと、頂部５ｃと、下降傾斜部５ｄと、半導体素子にハンダ付けされる素子ハンダ付け部５ｅと、ハンダの広がりを制限する部分５ｆとからなる。上昇傾斜部５ｂと頂部５ｃと下降傾斜部５ｄとは弾性部を形成し、リード部材２からハンダ付け部５ａを通して機械的な力が素子ハンダ付け部５ｅと半導体素子とのハンダ付け部分に加わるのを弱める働きを行う。なお、頂部５ｃは平坦である必要がなく、円弧状でも良いが、極力背の高さを低くするには平坦であるのが好ましい。   Two preferred examples of the connecting member 5 will be described with reference to FIGS. 3A is a perspective view of the connecting member 5, and FIG. 3B is a side view. A flat soldered portion 5a soldered to the upper surface of the flat portion 2c of the lead member 2 shown in FIG. 2, and a rising inclined portion rising above the sum of the thickness of the semiconductor element 4 and the thickness of the solder layer 5b, a top portion 5c, a descending inclined portion 5d, an element soldering portion 5e to be soldered to the semiconductor element, and a portion 5f for restricting the spread of the solder. The rising inclined portion 5b, the top portion 5c, and the falling inclined portion 5d form an elastic portion, and mechanical force is applied from the lead member 2 to the soldering portion between the element soldering portion 5e and the semiconductor element through the soldering portion 5a. It works to weaken. The top portion 5c does not need to be flat and may have an arc shape, but is preferably flat in order to reduce the height as much as possible.

図４は二つ目の好ましい結線部材例を示し。図４（Ａ）は結線部材５の斜視図であり、図４（Ｂ）は側面図である。図３で用いた記号と同一の記号は、図３における部材と同一の名称の部材を示す。図４に示す結線部材が図３に示した結線部材５と異なる主な箇所は、例えば図２の半導体素子４にハンダ付けされる素子ハンダ付け部５ｅである。素子ハンダ付け部５ｅには、プレスなどによって形成された貫通孔５ｇと、貫通孔５ｇの周囲を下側に突出した突出部５ｉとが形成されている。突出部５ｉによってハンダ層の厚みが決定され、またハンダ材料が貫通孔５ｇを満たすようにすることにより、満足の行くハンダ付け強度を得ることができる。これら好ましい結線部材の例にあっては、一方のリード部材に固着される結線部材５の一端側と半導体素子に固着される結線部材の他端側との間に弾性部として働く箇所を備えるので、リード部材２、３に印加される機械的応力は弾性部を形成する部分５ｂ〜５ｄによって吸収され、また、ハンダ付け時や、モールド樹脂の硬化時に発生する歪みによる機械的応力も、弾性部を形成する部分５ｂ〜５ｄによって吸収される。   FIG. 4 shows a second preferred connection member example. 4A is a perspective view of the connecting member 5, and FIG. 4B is a side view. The same symbols as those used in FIG. 3 indicate members having the same names as the members in FIG. The main place where the connecting member shown in FIG. 4 is different from the connecting member 5 shown in FIG. 3 is, for example, an element soldering portion 5e that is soldered to the semiconductor element 4 shown in FIG. The element soldering portion 5e is formed with a through hole 5g formed by pressing or the like and a protruding portion 5i that protrudes downward around the through hole 5g. The thickness of the solder layer is determined by the protrusion 5i, and satisfactory soldering strength can be obtained by filling the through hole 5g with the solder material. In the example of these preferable connection members, a portion serving as an elastic portion is provided between one end side of the connection member 5 fixed to one lead member and the other end side of the connection member fixed to the semiconductor element. The mechanical stress applied to the lead members 2 and 3 is absorbed by the portions 5b to 5d forming the elastic portion, and the mechanical stress due to distortion generated during soldering or hardening of the mold resin is also caused by the elastic portion. Are absorbed by the portions 5b to 5d forming

[実施形態３]
図５に示す実施形態３にかかる表面実装型半導体装置３００は、図１に示した表面実装型半導体装置１００のモールド樹脂１の内部構造の一例を示しており、リード部材２、３の曲げ構造及び寸法は図1のものと同じであり、モールド樹脂１との関係も同じである。リード部材３の基の部分３ａの上面には、半導体素子４が通常の方法でハンダ付けされている。半導体素子４の上面にはワイヤボンディング６の一端がボンディングされており、ボンディングワイヤ６の他端はリード部材２の基の部分２ａの上面にボンディングされる。リード部材２、３にはそれぞれ小貫通孔２ｈ、３ｈが備えられており、これらは前述したように、リード部材２、３の下側に位置するモールド樹脂を上側に位置するモールド樹脂１に結合する働きを行い、リード部材２、３の下側に位置するモールド樹脂が剥がれ難くしている。なお、ボンディング方法は通常の方法で行われるので詳述しない。 [Embodiment 3]
A surface-mount semiconductor device 300 according to the third embodiment shown in FIG. 5 shows an example of the internal structure of the mold resin 1 of the surface-mount semiconductor device 100 shown in FIG. The dimensions are the same as those in FIG. 1, and the relationship with the mold resin 1 is also the same. The semiconductor element 4 is soldered to the upper surface of the base portion 3a of the lead member 3 by a normal method. One end of the wire bonding 6 is bonded to the upper surface of the semiconductor element 4, and the other end of the bonding wire 6 is bonded to the upper surface of the base portion 2 a of the lead member 2. The lead members 2 and 3 are provided with small through-holes 2h and 3h, respectively, which, as described above, bind the mold resin located below the lead members 2 and 3 to the mold resin 1 located above. The mold resin located on the lower side of the lead members 2 and 3 is difficult to peel off. Since the bonding method is performed by a normal method, it will not be described in detail.

[実施形態４]
図６に示す実施形態４にかかる表面実装型半導体装置４００は、図１に示した表面実装型半導体装置１００のモールド樹脂１の内部構造の一例を示しており、リード部材３の曲げ構造及び寸法は図1のものと同じであり、モールド樹脂１との関係も同じである。リード部材２はモールド樹脂１から露出した部分については図1に示したリード部材２と曲げ構造及び寸法は同じであり、モールド樹脂１との関係も同じであるが、基の部分２ａが前述の結線部材の働きを行う構造となっている。基の部分２ａは、途中から曲げられた傾斜部２ｅと基の部分２ａに平行になる素子固着部２ｆとからなる。素子固着部２ｆは、図４に示した結線部材５における貫通孔５ｇと同様な貫通孔２ｇ、貫通孔２ｇの周囲を下側に突出した突出部２ｉが形成されている。 [Embodiment 4]
A surface-mount semiconductor device 400 according to the fourth embodiment shown in FIG. 6 shows an example of the internal structure of the mold resin 1 of the surface-mount semiconductor device 100 shown in FIG. Is the same as that of FIG. 1, and the relationship with the mold resin 1 is also the same. The lead member 2 has the same bending structure and dimensions as those of the lead member 2 shown in FIG. 1 in the portion exposed from the mold resin 1, and the relationship with the mold resin 1 is the same. It has a structure that functions as a connecting member. The base portion 2a includes an inclined portion 2e bent from the middle and an element fixing portion 2f parallel to the base portion 2a. The element fixing portion 2f is formed with a through hole 2g similar to the through hole 5g in the connecting member 5 shown in FIG. 4, and a protruding portion 2i protruding downward around the through hole 2g.

貫通孔２ｇは、図４に示した結線部材５における貫通孔５ｇと同様な働きを行い、ハンダ付け強度を増大させると共に、ハンダ材料が不要に広がるのを防止する働きを行う。突出した突出部２ｉも結線部材５における貫通孔５ｉと同様な働きを行う。この実施形態においても、表面実装型半導体装置の背高を極限まで低くするために、図４に示した結線部材５における前記弾性部を形成する部分を備えていないが、１．１〜１．２ｍｍ程度以上の背高を有する表面実装型半導体装置の場合には、図４に示した結線部材５における前記弾性部を形成する部分に相当する部分を備えるのが、機械的なストレスの影響をできるだけ小さくするという観点からは好ましい。   The through hole 2g performs the same function as the through hole 5g in the connecting member 5 shown in FIG. 4, and increases the soldering strength and prevents the solder material from spreading unnecessarily. The protruding portion 2 i that protrudes also performs the same function as the through hole 5 i in the connecting member 5. Even in this embodiment, in order to reduce the height of the surface-mount type semiconductor device to the limit, the connecting member 5 shown in FIG. In the case of a surface-mount type semiconductor device having a height of about 2 mm or more, the provision of a portion corresponding to the portion forming the elastic portion in the connection member 5 shown in FIG. It is preferable from the viewpoint of making it as small as possible.

なお、半導体素子としてプレーナー型のもの、あるいはメサ型のもののいずれでも用いることができるが、メサ型の半導体素子の場合には、ＰＮ接合が露出しているので、通常の方法でインナーコートを行ってＰＮ接合を保護した状態で電気絶縁被覆材料で樹脂モールドする必要がある。
As the semiconductor element, either a planar type or a mesa type can be used. However, in the case of a mesa type semiconductor element, the PN junction is exposed. Therefore, it is necessary to resin mold with an electrically insulating coating material while protecting the PN junction.

本発明の一実施形態に係るリード部材を説明するための図である。It is a figure for demonstrating the lead member which concerns on one Embodiment of this invention. 本発明の一実施形態に係るリード部材を用いている表面実装型半導体装置を説明するための図である。It is a figure for demonstrating the surface mounted semiconductor device which uses the lead member which concerns on one Embodiment of this invention. 本発明の一実施形態に係るリード部材を用いている表面実装型半導体装置に用いられる結線部材の１例を説明するための図である。It is a figure for demonstrating an example of the connection member used for the surface mount-type semiconductor device using the lead member which concerns on one Embodiment of this invention. 本発明の一実施形態に係るリード部材を用いている表面実装型半導体装置に用いられる結線部材の他の１例を説明するための図である。It is a figure for demonstrating another example of the connection member used for the surface mount type semiconductor device which uses the lead member which concerns on one Embodiment of this invention. 本発明の一実施形態に係るリード部材を用いている他の表面実装型半導体装置を説明するための図である。It is a figure for demonstrating the other surface mounted semiconductor device using the lead member which concerns on one Embodiment of this invention. 本発明の一実施形態に係るリード部材を用いている他の表面実装型半導体装置を説明するための図である。It is a figure for demonstrating the other surface mounted semiconductor device using the lead member which concerns on one Embodiment of this invention.

符号の説明Explanation of symbols

１・・・モールド樹脂
２・・・リード部材
２ａ・・・基の部分
２ｂ・・・曲げ部分
２ｃ・・・平坦部
２ｅ・・・突起部
２ｇ・・・貫通孔
２ｈ・・・小貫通孔
３・・・リード部材
３ａ・・・基の部分
３ｂ・・・曲げ部分
３ｃ・・・平坦部分
４・・・半導体素子
５・・・結線部材
６・・・ボンディングワイヤ
DESCRIPTION OF SYMBOLS 1 ... Mold resin 2 ... Lead member 2a ... Base part 2b ... Bending part 2c ... Flat part 2e ... Projection part 2g ... Through-hole 2h ... Small through-hole DESCRIPTION OF SYMBOLS 3 ... Lead member 3a ... Base part 3b ... Bending part 3c ... Flat part 4 ... Semiconductor element 5 ... Connection member 6 ... Bonding wire

Claims (4)

電子部品に用いられるリード部材において、
前記リード部材は、基の部分と、該基の部分の途中からある角度で曲げられた曲げ部分と、その曲げ部分から更に曲げられて前記基の部分と平行になるように曲げられた平坦部分とからなり、
前記リード部材における前記基の部分の上面と前記平坦部分の下面との間の距離をＴ１とし、前記リード部材の前記平坦部分の厚みをＴ２とし、前記基の部分の下面と前記平坦部分の前記下面との間の距離をＴ３とするとき、Ｔ２＝２×Ｔ１、Ｔ１＝Ｔ３となるように、前記リード部材が曲げられていることを特徴とするリード部材。 In lead members used in electronic components,
The lead member includes a base portion, a bent portion bent at an angle from the middle of the base portion, and a flat portion bent further from the bent portion so as to be parallel to the base portion. And consist of
The distance between the upper surface of the base portion of the lead member and the lower surface of the flat portion is T1, the thickness of the flat portion of the lead member is T2, and the lower surface of the base portion and the flat portion are A lead member, wherein the lead member is bent so that T2 = 2 × T1 and T1 = T3, where T3 is a distance to the lower surface. 請求項１に記載のリード部材を一対用いている表面実装型半導体装置において、
前記リード部材を、それぞれの前記基の部分が僅かな距離を隔てて位置するように配置すると共に、前記リード部材の一方に半導体素子の一方面を搭載してハンダ付けし、前記半導体素子の他方面を、直接又は間接的に前記リード部材の他方にハンダ付けし、
前記リード部材の少なくとも一方の前記基の部分が、０．１ｍｍ〜０．５ｍｍの範囲内で露出するように電気絶縁性樹脂で被覆されていることを特徴とする表面実装型半導体装置。 In the surface mount type semiconductor device using a pair of lead members according to claim 1,
The lead members are arranged so that the respective base portions are located at a slight distance, and one surface of a semiconductor element is mounted on one side of the lead member and soldered, and the other of the semiconductor elements Soldering the direction directly or indirectly to the other of the lead members,
A surface-mounting type semiconductor device, wherein at least one of the base portions of the lead member is covered with an electrically insulating resin so as to be exposed within a range of 0.1 mm to 0.5 mm. 請求項１に記載のリード部材を一対用いている表面実装型半導体装置において、
前記リード部材を、それぞれの前記基の部分が僅かな距離を隔てて位置するように配置すると共に、前記リード部材の一方に半導体素子の一方面を搭載してハンダ付けし、前記半導体素子の他方面を、直接又は間接的に前記リード部材の他方にハンダ付けし、
前記リード部材の前記曲げ部分までが前記電気絶縁樹脂で被覆され、前記リード部材の前記平坦部分が前記電気絶縁性樹脂から露出するように被覆されていることを特徴とする表面実装型半導体装置。 In the surface mount type semiconductor device using a pair of lead members according to claim 1,
The lead members are arranged so that the respective base portions are located at a slight distance, and one surface of a semiconductor element is mounted on one side of the lead member and soldered, and the other of the semiconductor elements Soldering the direction directly or indirectly to the other of the lead members,
The surface-mount type semiconductor device is characterized in that the bent portion of the lead member is covered with the electrically insulating resin, and the flat portion of the lead member is covered so as to be exposed from the electrically insulating resin. 請求項２又は請求項３の発明において、
前記半導体素子の他方面は、結線部材にハンダ付けされ、かつ該結線部材は前記リード部材の他方にハンダ付けされており、
前記結線部材は、前記半導体素子の他方面にハンダ付けされる部分と前記リード部材の他方にハンダ付けされる部分との間に弾性曲げ部分を備えることを特徴とする表面実装型半導体装置。
In the invention of claim 2 or claim 3,
The other surface of the semiconductor element is soldered to a connecting member, and the connecting member is soldered to the other of the lead members;
The surface-mounting type semiconductor device according to claim 1, wherein the connection member includes an elastic bending portion between a portion soldered to the other surface of the semiconductor element and a portion soldered to the other surface of the lead member.
JP2004241908A 2004-08-23 2004-08-23 Lead member and surface mounted semiconductor device Pending JP2006060106A (en)

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Publication number Priority date Publication date Assignee Title
JP2008182074A (en) * 2007-01-25 2008-08-07 Mitsubishi Electric Corp Power semiconductor device
JP2012182253A (en) * 2011-02-28 2012-09-20 Sanken Electric Co Ltd Semiconductor device
JP2017079228A (en) * 2015-10-19 2017-04-27 株式会社三社電機製作所 Terminal for semiconductor element
JP2017168553A (en) * 2016-03-15 2017-09-21 ローム株式会社 Semiconductor device and manufacturing method of the same
JP2018019110A (en) * 2017-11-02 2018-02-01 ローム株式会社 Semiconductor device

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JPH0357251A (en) * 1989-07-26 1991-03-12 Hitachi Ltd Semiconductor device
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JPH0357251A (en) * 1989-07-26 1991-03-12 Hitachi Ltd Semiconductor device
JPH06275627A (en) * 1993-03-17 1994-09-30 Rohm Co Ltd Molded semiconductor device and its manufacture
JPH11340377A (en) * 1998-05-22 1999-12-10 Matsushita Electron Corp Surface mount type semiconductor device
JP2003318344A (en) * 2002-04-22 2003-11-07 Sanyo Electric Co Ltd Semiconductor device
JP2004146488A (en) * 2002-10-23 2004-05-20 Renesas Technology Corp Semiconductor device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182074A (en) * 2007-01-25 2008-08-07 Mitsubishi Electric Corp Power semiconductor device
JP4640345B2 (en) * 2007-01-25 2011-03-02 三菱電機株式会社 Power semiconductor device
JP2012182253A (en) * 2011-02-28 2012-09-20 Sanken Electric Co Ltd Semiconductor device
JP2017079228A (en) * 2015-10-19 2017-04-27 株式会社三社電機製作所 Terminal for semiconductor element
JP2017168553A (en) * 2016-03-15 2017-09-21 ローム株式会社 Semiconductor device and manufacturing method of the same
JP2018019110A (en) * 2017-11-02 2018-02-01 ローム株式会社 Semiconductor device

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