JP2006058676A5 - - Google Patents
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- JP2006058676A5 JP2006058676A5 JP2004241368A JP2004241368A JP2006058676A5 JP 2006058676 A5 JP2006058676 A5 JP 2006058676A5 JP 2004241368 A JP2004241368 A JP 2004241368A JP 2004241368 A JP2004241368 A JP 2004241368A JP 2006058676 A5 JP2006058676 A5 JP 2006058676A5
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- Prior art keywords
- layer
- electrode layer
- forming
- semiconductor layer
- gate insulating
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004241368A JP4906029B2 (ja) | 2004-08-20 | 2004-08-20 | 表示装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004241368A JP4906029B2 (ja) | 2004-08-20 | 2004-08-20 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006058676A JP2006058676A (ja) | 2006-03-02 |
| JP2006058676A5 true JP2006058676A5 (cg-RX-API-DMAC7.html) | 2007-09-27 |
| JP4906029B2 JP4906029B2 (ja) | 2012-03-28 |
Family
ID=36106175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004241368A Expired - Fee Related JP4906029B2 (ja) | 2004-08-20 | 2004-08-20 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4906029B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8173519B2 (en) | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5135699B2 (ja) * | 2006-03-28 | 2013-02-06 | セイコーエプソン株式会社 | 電気光学装置用基板の製造方法及び電気光学装置の製造方法 |
| JP2007287732A (ja) * | 2006-04-12 | 2007-11-01 | Mitsubishi Electric Corp | 薄膜トランジスタ、その製造方法、及び表示装置 |
| KR101293566B1 (ko) | 2007-01-11 | 2013-08-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| JP5213421B2 (ja) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタ |
| KR101406889B1 (ko) | 2007-12-24 | 2014-06-13 | 삼성디스플레이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
| US8835909B2 (en) * | 2008-08-04 | 2014-09-16 | The Trustees Of Princeton University | Hybrid dielectric material for thin film transistors |
| KR20160063402A (ko) | 2008-09-12 | 2016-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 디스플레이 장치 |
| US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8461582B2 (en) | 2009-03-05 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101074809B1 (ko) * | 2009-12-22 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| KR101867272B1 (ko) | 2010-03-05 | 2018-06-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그의 제작 방법 |
| JP5770236B2 (ja) * | 2013-09-18 | 2015-08-26 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN110520920A (zh) * | 2017-03-31 | 2019-11-29 | 株式会社日本显示器 | 电子设备及其制造方法 |
| JP6715312B2 (ja) * | 2018-12-04 | 2020-07-01 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 表示装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6159389A (ja) * | 1984-08-30 | 1986-03-26 | 株式会社東芝 | アクテイブマトリツクス型表示装置用表示電極アレイの製造方法 |
| JPS61183622A (ja) * | 1985-02-08 | 1986-08-16 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置とその製造方法 |
| JPH0654782B2 (ja) * | 1985-02-08 | 1994-07-20 | セイコー電子工業株式会社 | 薄膜トランジスタ装置の製造方法 |
| JPH0745836A (ja) * | 1993-07-27 | 1995-02-14 | Rohm Co Ltd | 薄膜トランジスタおよびその製法 |
| JP2003203926A (ja) * | 2001-10-30 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP4126996B2 (ja) * | 2002-03-13 | 2008-07-30 | セイコーエプソン株式会社 | デバイスの製造方法及びデバイス製造装置 |
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2004
- 2004-08-20 JP JP2004241368A patent/JP4906029B2/ja not_active Expired - Fee Related