JP2006054307A - Manufacturing method of substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate for preventing etching of the vias provided through the substrate in the power feeding removing process, with regard to the manufacturing method of a substrate providing the vias to the through holes formed to the base material. <P>SOLUTION: An insulating layer 32 is provided to the base material 31, made of silicon to which through holes 34 are formed. A film resist 41, having an aperture 41A for providing a connection pad, is provided to a surface 31B of the base material 31. A film member 45 provided with a plating layer 48 for power feeding, formed of a Cu plated film 49, and a Ni plated film is adhered to the film type resist 41. Thereby. the plating layer 48 for power feeding is removed with the etching, after formation of the connecting pad and the plating film 51 which becomes the through via with the electrolytic plating method. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate manufacturing method, and more particularly to a substrate manufacturing method in which a through via is provided in a through hole formed in a base material.

  In recent years, a substrate such as a micromachine package called MEMS (Micro Electro Mechanical Systems) using semiconductor micromachining technology or an interposer on which a semiconductor element is mounted is electrically connected between wirings provided on both sides of the substrate. A through via is connected to the. The through via is provided in a through hole penetrating the base material, and an electrolytic plating method is applied when such a through via is formed.

  A manufacturing method for forming a through via in a conventional substrate will be described with reference to FIGS. 1 to 6 are diagrams showing a manufacturing process of a substrate having a conventional through via. First, as shown in FIG. 1, a through hole 2 for forming a through via 10 in the silicon substrate 1 is formed. Next, as shown in FIG. 2, insulating films 3 are formed on the inner wall of the through hole 2 and both surfaces of the silicon substrate 1. This insulating film 3 is a film for insulating between the through via 10 and the silicon substrate 1.

  Subsequently, as shown in FIG. 3, a metal foil 5 is bonded to the back surface side of the silicon substrate 1 through an adhesive film 4. The metal foil 5 is a power feeding layer when electrolytic plating is performed. For example, a copper foil can be used as the metal foil 5, and the thickness of the metal foil 5 is about 20 to 30 μm. Next, as shown in FIG. 4, an opening 7 that exposes the metal foil 5 is formed in a portion of the adhesive film 4 that faces the through hole 2 by etching.

  Subsequently, as shown in FIG. 5, the structure shown in FIG. 4 is immersed in the plating solution, and the plating film 9 is deposited and grown in the through hole 2 by electrolytic plating using the metal foil 5 as a power feeding layer, The through hole 2 is filled with the plating film 9. Next, as shown in FIG. 6, the metal foil 5 and the adhesive film 4 are removed. The removal of the metal foil 5 is performed by etching. Then, the through via 10 is formed by polishing the plating film 9 protruding from the upper surface 1A of the silicon substrate 1 (see, for example, Patent Document 1).

  As another technique, there is a substrate manufacturing method in which a through via and a connection pad formed at an end of the through via are formed simultaneously. 7 and 8 are diagrams showing a substrate manufacturing process in the case where through vias and connection pads are formed simultaneously. In FIG. 8, a plating film 88A indicates a portion of the plating film corresponding to the through via, and a plating film 88B indicates a portion of the plating film corresponding to the connection pad.

  As shown in FIG. 7, an insulating layer 83 is formed on a silicon substrate 81 having a through hole 82, and a film resist 85 having an opening 85A corresponding to the shape of the connection pad is used as the back surface 81A of the silicon substrate 81. A metal foil 87 serving as a power feeding layer is attached to the film resist 85.

Subsequently, as shown in FIG. 8, a plating film 88 is deposited and grown on the through hole 82 and the opening 85A by electrolytic plating using the metal foil 87 as a power feeding layer. After that, by removing the metal foil 87 and the film-like resist 85 and polishing the plating film 88A protruding from the surface 81A of the silicon base material 81, the through via and the connection pad are formed.
JP 2004-22990 A

  FIG. 9 is an enlarged view of the substrate after the power feeding layer removing step shown in FIG. FIG. 10 is a diagram showing a substrate manufacturing process (feeding layer removing process) in the case where through vias and connection pads are formed simultaneously. In FIG. 9, the end face 9 </ b> A shows an end face in a state where the plating film 9 corresponding to the through via 10 is not etched, and the end face 9 </ b> B is a case where the plating film 9 corresponding to the through via 10 is etched. The end surface of is shown.

  However, since the thickness of the metal foil 5 is as thick as about 20 to 30 μm, it is necessary to perform long-time etching in order to remove the metal foil 5 in the power feeding layer removing step. Therefore, the variation of the etching amount in the surface of the silicon base material 1 becomes large, and in the silicon base material 1 in the region where the etching amount is large, as shown in FIG. 9, the through via 10 (the plating film 9 corresponding to the through via 10). ) Is etched. Further, in the power feeding layer removing step, overetching is performed so that the metal foil 5 can be reliably removed, and thus the variation in etching amount is further increased by this overetching, and the through via 10 (plating film 9 corresponding to the through via 10). There has been a problem of etching.

  Further, as shown in FIG. 10, when the through via and the connection pad are simultaneously formed, the plating film 88B corresponding to the connection pad and the through via are also formed due to the variation in the etching amount due to the long etching time. There is a problem that the corresponding portion of the plating film 88A is etched.

  Therefore, the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a substrate manufacturing method capable of preventing a through via from being etched in a power feeding layer removing step.

  In order to solve the above-mentioned problems, the present invention is characterized by the following measures.

  In the invention of claim 1, in the method for manufacturing a substrate provided with a through via in a through hole penetrating the base material, a through hole forming step of forming the through hole in the base material, and on one surface of the base material A film-like member having a power supply layer on a film-like resin substrate, a film-like member adhesion step for adhering the power supply layer so as to face the through-hole, and supplying power from the power supply layer. A through via forming step of depositing and growing a plating film to form the through via; a film-like resin substrate peeling step of peeling off the film-like resin substrate; and a feeding layer removing step of removing the feeding layer by etching This can be solved by a method for manufacturing a substrate including

  According to the above invention, when the through via is formed, the power supply layer is formed by, for example, any one of a plating method, a sputtering method, and a vapor deposition method, so that a conventional metal foil is used for the power supply layer. In addition, it is possible to prevent the through via from being etched by reducing the thickness of the power feeding layer and shortening the etching time of the power feeding plating layer in the power feeding layer removing step.

  In the invention according to claim 2, the power feeding layer includes a Ni plating film formed by electroless plating on the film-like resin substrate, and a Cu plating film formed by electrolytic plating on the Ni plating film, This can be solved by the substrate manufacturing method according to claim 1.

  According to the above invention, after forming the Ni plating film on the film-like resin substrate by electroless plating, the Cu plating film is formed by the electrolytic plating method. In the through via forming step, the Ni plating film and the Cu plating film are fed to the power supply layer. As a result, it is possible to form a good plating film.

  According to a third aspect of the present invention, a resin layer containing Pd is provided between the film-like resin base material and the power feeding layer. It can be solved by the manufacturing method.

  According to the above invention, by providing the resin layer containing Pd between the film-like resin base material and the power feeding layer, the adhesion between the film-like resin base material and the power feeding layer is lowered, and the film shape In the resin substrate peeling step, the film-like resin member can be easily peeled from the power feeding layer.

  According to a fourth aspect of the present invention, there is provided a substrate manufacturing method comprising: a through via provided in a through hole penetrating the base material; and an electrode pad provided at one end of the through via. A through-hole forming step for forming the through-hole, and a resist layer having an opening corresponding to the shape of the electrode pad and exposing the base on one surface of the base. Forming a resist layer so as to face the through-hole, a film-like member adhering step for adhering a film-like member having a power feeding layer formed on the film-like resin base material to the resist layer, Supplying power from the power supply layer, depositing and growing a plating film by electrolytic plating, forming a connection pad and a through via, and forming a film-like resin base for peeling the film-like resin substrate A peeling step, the method of manufacturing a substrate, which comprises a power feeding layer removing step of removing the power feeding layer by etching, can be solved.

  According to the above invention, the thickness of the power feeding layer can be made larger than when a conventional metal foil is used for the power feeding layer by forming the power feeding layer by, for example, a plating method, a sputtering method, or a vapor deposition method. By reducing the thickness, the etching time of the power feeding layer in the power feeding layer removing step can be shortened to prevent the connection pad and the through via from being etched.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the board | substrate which can prevent that a penetration via is etched in a feed layer removal process can be provided.

Next, embodiments of the present invention will be described with reference to the drawings.
(First embodiment)
First, the semiconductor device 20 including the substrate 30 and the semiconductor element 25 according to this embodiment will be described with reference to FIG. FIG. 11 is a cross-sectional view of a semiconductor device including the substrate and the semiconductor element of this example. In FIG. 11, M1 indicates the thickness of the electrode pad 36 (hereinafter referred to as thickness M1).

  The semiconductor device 20 generally includes a semiconductor element 25 and a substrate 30, and a solder bump 26 of the semiconductor element 25 is flip-chip connected to a through via 35 provided in the substrate 30. The semiconductor element 25 has a multilayer wiring structure including a plurality of wirings and an insulating layer (not shown). The semiconductor element 25 is, for example, an LSI chip.

  The substrate 30 is roughly configured to include a base material 31, an insulating layer 32, a through via 35, a connection pad 36, and a solder ball 37. The substrate 31 is an interposer and is connected to a mother board (not shown) via solder balls 37. The substrate 31 is for electrically connecting the semiconductor element 25 and a mother board (not shown).

  The base material 31 is made of silicon. The base material 31 is formed with a plurality of through holes 34 penetrating the base material 31 in the vertical direction. The insulating layer 32 is provided on the surface of the base material 31 corresponding to the through hole 34 and the surfaces 31 </ b> A and 31 </ b> B of the base material 31. The through via 35 is disposed in the through hole 34 provided with the insulating layer 32, and is formed of a Cu plating film.

  A base 31 made of silicon and the through via 35 are insulated by an insulating layer 32. A solder bump 26 provided on the semiconductor element 25 is connected to one end 35A of the through via 35, and a connection pad 36 made of a Cu plating film is integrated with the through via 35 at the other end. Is formed. The solder ball 37 is disposed on the connection pad 36. The solder ball 37 is electrically connected to a mother board (not shown).

  A diffusion prevention film (not shown) is provided on the surface of the connection pad 36 and the surface (end surface) of the through via 35. The diffusion prevention film is for improving the wettability of the solder and preventing Cu contained in the through via 35 and the connection pad 36 from diffusing into the solder bump 26 and the solder ball 37. For the diffusion prevention film, for example, a multilayer film having a two-layer structure of Ni layer / Au layer can be used.

  Next, with reference to FIGS. 12 to 20, a method for manufacturing the substrate 30 having the through vias and the connection pads of this embodiment will be described. 12 to 20 are views showing a manufacturing process of a substrate provided with through vias and connection pads according to this embodiment. FIG. 21 is a diagram showing a manufacturing process of a substrate in which solder balls are connected to connection pads. In FIG. 12, 34A is the surface of the substrate 31 exposed to the through hole 34 (hereinafter referred to as surface 34A), R1 is the opening diameter of the through hole 34 (hereinafter referred to as opening diameter R1), and 31A is a semiconductor. A surface of the base material 31 on which the element 25 is mounted (hereinafter referred to as a surface 31A), 31B indicates a surface of the base material 31 on the side connected to the motherboard (hereinafter referred to as a surface 31B).

  First, as shown in FIG. 12, a plurality of through holes 34 having an opening diameter R1 penetrating the base material 31 are formed (through hole forming step). The opening diameter R1 can be appropriately selected within a range of about 30 to 60 μm, for example. The through hole 34 can be formed, for example, by any one of drilling using a drill, laser processing, and anisotropic etching.

  Next, as shown in FIG. 13, the insulating layer 32 is formed on the surfaces 31 </ b> A, 31 </ b> B, and 34 </ b> A of the base material 31. For the insulating layer 32, for example, an oxide film formed by a CVD method, a thermal oxide film formed by an oxidation furnace, or the like can be used.

  Subsequently, as shown in FIG. 14, the film-like resist 41 having the opening 41 </ b> A is attached to the surface 31 </ b> B of the base material 31 so that the opening 41 </ b> A faces the through hole 34 (resist layer forming step). The opening diameter R2 of the opening 41A is formed larger than the opening diameter R1 of the through hole 34 (R2> R1). The opening 41 </ b> A corresponds to the shape of the connection pad 36 and is an opening that exposes the insulating layer 32 formed on the surface 31 </ b> B of the substrate 31. The thickness M2 of the film resist 41 as the resist layer is set to be substantially equal to the thickness M1 of the connection pad 36 (M1 = M2). Moreover, the adhesiveness between the film-like member 45 and the base material 31 can be improved by providing the film-like resist 41 between the film-like member 45 and the base material 31 described later.

  Next, as shown in FIG. 15, the film-like member 45 is stuck on the film-like resist 41 (film-like member adhesion step). Here, the configuration of the film-like member 45 will be described. The film-like member 45 is roughly configured to have a film-like resin base material 46, a Pd-containing resin layer 47, and a power feeding plating layer 48 that is a power feeding layer. In addition, the power supply plating layer 48 is composed of a Ni plating film 49 and a Cu plating film 50. The film-like member 45 has a configuration in which a Pd-containing resin layer 47, a Ni plating film 49, and a Cu plating film 50 are sequentially laminated on a film-like resin base material 46.

  The film-like resin base material 46 is a base material for forming the Ni plating film 49 and the Cu plating film 50. For the film-like resin substrate 46, for example, a polyimide film can be used. The film-like resin substrate 46 may be made of a resin other than a polyimide resin such as an epoxy resin. When a polyimide-based resin is used as the film-like resin base material 46, since the adhesiveness with a plating film, a sputtered film, a vapor-deposited film, etc. is low, the film-like resin base material 46 can be easily formed from a metal film serving as a power feeding layer Can be peeled off.

  The Pd-containing resin layer 47 is made by, for example, containing Pd in a resin layer such as polyimide, and is applied on the film-like resin base material 46. The thickness M3 of the Pd-containing resin layer 47 can be set to about 2 μm, for example. By providing the Pd-containing resin layer 47 between the film-like resin substrate 46 and the Ni plating film 49, the adhesion between the film-like resin substrate 46 and the Ni plating film 49 is weakened, and the Ni plating film The film-like resin base material 46 can be easily peeled from 49.

  The Ni plating film 49 is formed on the Pd-containing resin layer 47 by an electroless plating method. The Ni plating film 49 is a power feeding layer when the Cu plating film 50 is formed by an electrolytic plating method. The thickness M4 of the Ni plating film 49 can be set to, for example, about 0.1 μm.

  The Cu plating film 50 is formed on the Ni plating film 49 by an electrolytic plating method. The Cu plating film 50 is a power feeding layer when the Cu plating film 51 (see FIG. 16) is formed in the through hole 34 and the opening 41A. The thickness M5 of the Cu plating film 49 can be appropriately selected within a range of 0.1 to 0.5 μm, for example.

  Instead of the film-like member 45, the Pd-containing resin layer 47 is removed from the configuration of the film-like member 45 (a configuration in which the power supply plating layer 48 is provided on the film-like resin base material 46). A film-like member may be used. Further, instead of the power supply plating layer 48, a metal film formed by sputtering or vapor deposition may be used as the power supply layer. When the power feeding layer is formed by sputtering or vapor deposition, for example, a Cu film can be used as the metal film, and the thickness can be about 0.1 to 0.5 μm. When a Cu film formed by sputtering or vapor deposition is used as a power feeding layer, adhesion between a metal film (for example, Cu film) formed by sputtering or vapor deposition and the film-like resin substrate 46 Therefore, the film-like resin substrate 46 can be easily peeled from the Cu film. Therefore, when a metal film formed by sputtering or vapor deposition is used as the power feeding layer, it is not necessary to provide the Pd-containing resin layer 47 between the film-like resin base material 46 and the power feeding layer.

  Next, the structure shown in FIG. 15 is immersed in a plating solution, and the Cu plating film 51 is deposited and grown in the through hole 34 and the opening 41A as shown in FIG. (Connection pad and through via forming step). Thus, by using the power-feeding plating layer 48 composed of the Ni plating film 49 formed by the electroless plating method and the Cu plating film 50 formed by the electroplating method as the power-feeding layer, the specific resistance of the power-feeding layer. By reducing the value, a high-quality Cu plating film 51 can be formed. The Cu plating film 51 has a protruding portion 51 </ b> A protruding from the surface 31 </ b> A of the base material 31.

  Subsequently, as shown in FIG. 17, the film-like resin base material 46 is peeled off together with the Pd-containing resin layer 47 from the film-like member 45 attached to the base material 31 (film-like resin base material peeling step). At this time, the adhesion force between the Cu plating film 51 provided in the through hole 34 and the power supply plating layer 48 is the adhesion between the film-like resin substrate 46 provided with the Pd-containing resin layer 47 and the power supply plating layer 48. Since it is larger than the force, the film-like resin substrate 46 provided with the Pd-containing resin layer 47 can be easily peeled from the power supply plating layer 48.

  Next, as shown in FIG. 18, a removal process of the power feeding plating layer 48 is performed using etching (a power feeding layer removing process).

  The thickness of the power supply plating layer 48 that is the power supply layer of the present embodiment is about 0.2 to 0.6 μm, which is considerably larger than the thickness of the metal foil 5 that is the conventional power supply layer 20 to 30 μm. Thinly formed. Therefore, in the power feeding layer removing step, the etching time for removing the power feeding plating layer 48 by etching is shortened to about 1/100 to 1/50 of the conventional one, and the Cu constituting the through via 35 and the electrode pad 36 is formed. It is possible to prevent the plating film 51 from being etched. For the etching, for example, wet etching can be used.

  Next, as shown in FIG. 19, the film resist 41 is removed with a resist stripping solution. As a result, a connection pad 36 having a thickness M1 is formed on the surface 31B side of the substrate 31. Subsequently, as shown in FIG. 20, the through via 35 is formed by polishing the protruding portion 51 </ b> A protruding toward the surface 31 </ b> A of the base material 31 by the polishing process. The solder bumps 26 of the semiconductor element 25 are connected to the surface 35A flattened by polishing. Thereafter, as shown in FIG. 21, solder balls 37 are disposed on the connection pads 36 to form the substrate 30.

  As described above, when the plating film 51 constituting the through via 35 and the connection pad 36 is deposited and grown by electrolytic plating, the thickness of the Ni plating film 49 and the Cu plating film 50 is about 0.2 to 0.6 μm. By using the power supply plating layer 48 as a power supply layer, in the power supply layer removing step, the removal of the power supply layer (Ni plating film 49 and Cu plating film 50) by etching is performed using the metal foil 5 as a conventional power supply layer. It is possible to prevent the plating film 51 corresponding to the through via 35 and the connection pad 36 from being etched in a shorter time than when used. Thereby, the dispersion | variation in the shape in the surface of the base material 31 of the through-via 35 and the connection pad 36 is suppressed, and the accurate through-via 35 and the connection pad 36 can be formed.

  22 and 23 are diagrams showing other film-like members applicable to the present embodiment. 22 and 23, the same components as those of the film-like member 45 shown in FIG.

  In the present embodiment, the power feeding plating layer 48 made up of the Ni plating film 49 and the Cu plating film 50 is used as the power feeding layer. However, like the film-like member 55 shown in FIG. Alternatively, only the Ni plating film 56 (film thickness of about 0.1 μm) may be used as the power feeding layer. In this case, since the kind of metal is different between the Cu plating film 51 constituting the through via 35 and the connection pad 36 and the Ni plating film as the power feeding layer, the Cu plating film 51 is removed when removing the power feeding layer (Ni plating film). By using an etching solution that does not dissolve, it is possible to prevent the through via 35 and the connection pad 36 from being dissolved in the etching solution.

  Further, as in the film-like member 60 shown in FIG. 23, only a Cu plating film 61 (film thickness of about 0.1 to 0.5 μm) formed by an electroless plating method may be used as a power feeding layer. In the said Example, although the case where the base material 31 was a silicon | silicone was demonstrated, it is applicable also when the base material 31 is a glass base material or a ceramic base material. The present embodiment can also be applied to a silicon substrate (silicon wafer) on which semiconductor elements are formed.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Deformation / change is possible. In addition, the said Example is applicable also to the board | substrate which forms only a penetration via by the electroplating method. Also, the present invention can be applied to a substrate provided with a build-up layer on the surface of the base material, and the same effects as in this embodiment can be obtained. Furthermore, the present invention can be applied to a base material made of a material other than silicon.

  The present invention can be applied to a substrate manufacturing method capable of preventing a through via from being etched in a power feeding layer removing step.

It is the figure (the 1) which showed the manufacturing process of the board | substrate provided with the conventional through-via. It is the figure (the 2) which showed the manufacturing process of the board | substrate provided with the conventional through-via. It is FIG. (The 3) which showed the manufacturing process of the board | substrate provided with the conventional through-via. It is FIG. (The 4) which showed the manufacturing process of the board | substrate provided with the conventional through-via. It is FIG. (The 5) which showed the manufacturing process of the board | substrate provided with the conventional through-via. It is FIG. (6) which showed the manufacturing process of the board | substrate provided with the conventional through-via. FIG. 5 is a diagram (No. 1) illustrating a manufacturing process of a substrate when through vias and connection pads are formed simultaneously; FIG. 11 is a diagram (No. 2) illustrating a manufacturing process of a substrate when a through via and a connection pad are formed at the same time. It is an enlarged view of the board | substrate after an electric power feeding layer removal process. It is the figure which showed the manufacturing process (feeding layer removal process) of the board | substrate in the case of forming a penetration via and a connection pad simultaneously. It is sectional drawing of the semiconductor device provided with the board | substrate and semiconductor element of a present Example. It is the figure (the 1) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (The 2) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (The 3) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (4) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (5) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (6) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (The 7) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (The 8) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is FIG. (9) which showed the manufacturing process of the board | substrate provided with the penetration via and connection pad of a present Example. It is the figure which showed the manufacturing process of the board | substrate with which a solder ball is connected to a connection pad. It is the figure (the 1) which showed the other film-like member applicable to a present Example. It is the figure (the 2) which showed the other film-like member applicable to a present Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,81 Silicon substrate 1A Upper surface 2,82 Through-hole 3,83 Insulating film 4 Adhesive film 5,87 Metal foil 7,41A, 85A Opening 9,88A, 88B, 88 Plated film 9A, 9B End face 10,35 Through Via 20 Semiconductor device 25 Semiconductor element 26 Solder bump 30 Substrate 31 Base material 81A Surface 31A, 31B, 34A Surface 32, 83 Insulating layer 34, 82 Through hole 35A End portion 36 Connection pad 37 Solder ball 41, 85 Film-like resist 45, 55, 60 Film-like member 46 Film-like resin base material 47 Pd-containing resin layer 48 Power-feeding plating layer 49, 56 Ni plating film 50, 51, 61 Cu plating film 51A Protrusion M1-M5 thickness R1, R2 Opening diameter

Claims (4)

In a method for manufacturing a substrate having a through via in a through hole penetrating a base material, a through hole forming step of forming the through hole in the base material;
A film-like member adhesion step for adhering a film-like member having a power supply layer on a film-like resin base material on one surface of the base material so that the power supply layer faces the through hole;
A through via forming step of supplying power from the power supply layer, depositing and growing a plating film by an electrolytic plating method, and forming the through via;
A film-like resin substrate peeling step for peeling the film-like resin substrate;
A method for manufacturing a substrate, comprising: a power feeding layer removing step of removing the power feeding layer by etching. The power feeding layer is a Ni plating film formed by electroless plating on the film-like resin substrate,
2. The method for manufacturing a substrate according to claim 1, comprising a Cu plating film formed by electrolytic plating on the Ni plating film. The method for producing a substrate according to claim 1, wherein a resin layer containing Pd is provided between the film-like resin base material and the power feeding layer. In a method for manufacturing a substrate including a through via provided in a through hole penetrating a base material and an electrode pad provided at one end of the through via,
A through hole forming step of forming the through hole in the base material;
Forming a resist layer corresponding to the shape of the electrode pad on one surface of the base material and having an opening for exposing the base material so that the opening faces the through hole Process,
A film-like member bonding step for bonding a film-like member provided with a power feeding layer formed on the film-like resin base material to the resist layer;
A power supply from the power supply layer, a plating film is deposited and grown by electrolytic plating, and a connection pad and a through via forming step for forming the connection pad and the through via; and
A film-like resin substrate peeling step for peeling the film-like resin substrate;
A method for manufacturing a substrate, comprising: a power feeding layer removing step of removing the power feeding layer by etching.

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