JP2006053473A - Optical waveguide module and mounting structure thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical waveguide module capable of reducing an optical coupling loss, and its mounting structure. <P>SOLUTION: In the optical waveguide module 1, an optical waveguide device 2 in which a first semiconductor layer 7, an insulation layer 8 and a second semiconductor layer 9 are laminated in order and an optical waveguide layer 10 is formed between the first semiconductor layer 7 and the second semiconductor layer 9, and a photoelectric conversion element (light incident means 3 such as a light emitting element, light receiving means 4 such as a light receiving element) are arranged on an interposer 5 made of ceramic etc. In the mounting structure of the optical waveguide module, the optical waveguide module 1 is mounted on a mounted substrate 6 via the interposer 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an optical waveguide module and a mounting structure thereof.

  Currently, signal propagation and operation power supply between elements formed on the front end by transistors and capacitors formed on silicon in LSI (Large Scale Integration) chips or between blocks of these elements The back end connection wiring to be performed is all made by electrical transmission through a metal wire formed on the insulating film substrate. However, along with the recent increase in device operation speed due to the miniaturization of the scale, that is, the increase in MPU functionality, the amount of data exchange required in the chip has been significantly increased and the capacity has been increased, and the operation clock has been significantly increased in speed. ing.

  In particular, various problems have emerged in metal wiring that electrically distributes data and operation clock signals. Typical of these problems are the problems of signal degradation and transmission errors due to RC delay of signals due to resistance of metal wiring, parasitic capacitance, impedance mismatch, EMC / EMI, crosstalk, etc., and signal transmission due to significant miniaturization There are problems such as an increase in power consumption required for this, an increase in wiring length due to multilayering, and a decrease in yield.

  Up to now, as the design rules for higher integration and higher speed have been refined, the wiring has been repeatedly miniaturized. Every time, the back end is optimized by using various methods such as optimizing the arrangement structure and developing new materials. I came to improve and solve the wiring.

For example, from the 0.18 μm rule generation to the 0.13 μm generation in terms of design rules, wiring has been formed with a structure using SiO ₂ as an insulating film and aluminum as a metal conductor, but the 0.09 μm (90 nm) generation Then, instead of aluminum, copper with low specific resistance is used as the wiring metal material, and in the 65nm generation, which is said to be the state-of-the-art process that has begun mass production, a low dielectric constant film should be used in combination with copper wiring. Thus, a structure for reducing the total wiring RC delay is used.

  However, in recent years, the effects of optimizing the back-end wiring arrangement and the development of new materials such as copper and low dielectric constant films have been hampered by physical limitations, and the number of wiring layers has increased due to advanced miniaturization. In order to realize further higher functionality of the system in the future, it has become necessary to review the shrink itself based on the miniaturization of the simple semiconductor chip design rules. In recent years, various drastic measures have been proposed to solve these problems, but the following are representative examples.

  For example, the effective dielectric constant of the insulating film by the Hy-Brid structure can be reduced, or the back-end reverse scaling method can be used. The latter is a structure that suppresses wiring delay by expanding the upper-layer global wiring and semi-global wiring opposite to the lower-layer wiring while miniaturizing the lower-layer wiring with scaling shrinkage. In this way, various optimization structures, materials, and processes for back-end wiring have been devised and implemented. However, assuming the 42 nm Node and later that are currently in the research and development stage, before the process of miniaturizing the elements, The wiring structure for transmitting sufficient transmission capacity information in the necessary frequency band corresponding to the operating speed has already broken down, and some new method to replace shrinking with electrical signal transmission consisting of insulating film and metal Need to be introduced.

  On the other hand, in signal propagation between LSI chips, a method has been proposed in which an optical wiring using an optical waveguide made of a polymer resin is used to optically modulate an electric signal to greatly improve the signal transmission speed. This optical waveguide includes a clad layer and a core layer made of a polymer resin, and the core layer functions as an optical path by making the refractive index of the core layer higher than that of the clad layer.

  However, when the optical connection wiring structure using the above-mentioned optical waveguide is applied in signal propagation between elements formed on the front end by transistors, capacitors, etc. formed on silicon in an LSI chip or between blocks of these elements In addition to shrinking the core optical transmission physics, in addition to the circuit chips required for the system architecture such as the codec for output electrical signals to be transmitted and MUX / DEMUX, the drive circuit chip for the light emitting element, the light emitting element chip, the light receiving An element chip, an optical waveguide (optical path), an impedance matching circuit, and an IV conversion circuit are physically required at least, and the number of chips corresponding to the number of these elements cannot be reduced unless they can be formed monolithically.

  Therefore, it is fundamentally inevitable that the overall operation power consumption can be obtained by integrating the operation power consumption of the plurality of chips described above as a simple sum, alignment error due to mounting, yield reduction, and cost accumulation. It exists as a problem.

  As a technique for solving this problem, a structure has been proposed in which an SOI (Silicon On Insulator) structure wafer is used so that the plurality of circuit chips described above are partially integrated into one chip to achieve a complex function and a reduction in the number of elements. (For example, refer to Patent Document 1 below.)

  FIG. 6 is a schematic sectional view showing an optical wiring structure formed using a wafer having an SOI structure.

As shown in FIG. 6, in the conventional optical wiring structure using the SOI structure wafer, the first silicon layer 50, the silicon oxide layer (SiO ₂ layer) 51, and the second silicon layer 52 are laminated in this order. Thus, an SOI structure wafer is formed, and an optical waveguide layer (eg, germanium-doped silicon layer) 53 is sandwiched between the silicon oxide layer 51 and the first silicon layer 50. A semiconductor integrated circuit 54 such as a bipolar transistor or a MOS transistor is incorporated on the second silicon layer 52. The SOI structure wafer is disposed on the printed wiring board 62. On the printed circuit board 62, a light emitting element 55 such as a laser is disposed at a position corresponding to the light incident end face 56 of the optical waveguide layer 53, and the light emitting end face 57 of the optical waveguide layer 53 is a mirror. The light receiving element 58 such as a photodiode is disposed immediately above the center line of the light emitting end face 57.

  The light propagation mechanism of this optical wiring structure condenses the optical signal 59 a emitted from the light emitting element 55 by the optical component 60 such as a lens and introduces it to the optical waveguide layer 53. The optical signal 59 b introduced into the optical waveguide layer 53 is guided through the optical waveguide layer 53, is polarized in the vertical direction at the light exit end face 57 of the mirror surface, and is emitted through the through hole 61. The emitted light 59c is collected by an optical component 60 such as a lens and received by the light receiving element 58 disposed immediately above the center line of the light emitting end face 57 of the optical waveguide layer 53.

  By using such an optical wiring structure with a wafer having an SOI structure, high-speed and low-power consumption operation is possible in a digital circuit, and the operating frequency in a high-frequency circuit can be improved and noise can be reduced. Can be completely suppressed and the occurrence rate of soft errors can be reduced.

WO 2004/010192 A2 29. Jan 2004 (7th page, 16th line to 8th page, 20th line, FIG. 1)

  In the conventional optical wiring structure using the SOI structure wafer described above, the SOI structure wafer, the light receiving element, and the light emitting element are mounted on the printed wiring board with their optical axes aligned, and further by optical components such as lenses. Condensing light. However, the optical axis shifts due to thermal deformation of the printed wiring board and other components mounted on the printed wiring board and deformation due to external force, resulting in a large optical coupling loss.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide an optical waveguide module capable of reducing optical coupling loss and a mounting structure thereof.

  That is, according to the present invention, a first semiconductor layer, an insulating layer, and a second semiconductor layer are stacked in this order, and an optical waveguide layer is formed between the first semiconductor layer and the second semiconductor layer. The optical waveguide device and the photoelectric conversion element are related to an optical waveguide module arranged in an interposer (for example, made by Ceramics).

  Moreover, the optical waveguide module of the present invention relates to a mounting structure for an optical waveguide module, which is mounted on a mounting substrate via the interposer.

  According to the present invention, since the optical waveguide device and the photoelectric conversion element are disposed in the interposer such as ceramics, the mounting substrate and other components mounted on the mounting substrate are thermally deformed. Even when deformed by external force, the optical axis is difficult to shift through the interposer, which has higher rigidity than the mounting substrate and is not easily deformed, and the optical coupling efficiency can be drastically improved. Is excellent.

  In addition, since the optical coupling loss can be reduced, it is possible to reduce the power consumption by suppressing the output of the photoelectric conversion element.

  In addition, the use of the interposer increases the degree of freedom in design, and as a result, the speed of product development can be improved and the cost can be reduced by sharing parts.

  Furthermore, alignment can be facilitated by using the interposer, and the cost for alignment can be reduced, so that a low-cost system can be provided.

  Since the optical waveguide module of the present invention has the excellent effects as described above, it can function suitably as an optical information processing apparatus such as optical communication.

  In the optical waveguide module of the present invention, the photoelectric conversion element includes a light incident means (for example, a light emitting element such as a semiconductor laser) that makes light incident on the optical waveguide layer of the optical waveguide device, and an output from the optical waveguide layer. It is desirable that the light incident means is at least one of light receiving means (for example, a light receiving element (such as an optical wiring or a photodiode)) that receives incident light.

  In addition, it is desirable that the refractive index of the optical waveguide layer is higher than the refractive indexes of the first semiconductor layer and the insulating layer, so that an effective optical signal can be guided in the optical waveguide layer. it can.

  Specifically, it is preferable that the optical waveguide layer is formed by doping an impurity element on a silicon substrate as the first semiconductor layer. The impurity element may be an element having a refractive index higher than that of silicon, and is preferably made of germanium, for example.

  Further, a germanium-doped silicon layer as the optical waveguide layer is formed on the silicon substrate, and a silicon oxide layer as the insulating layer and a silicon layer as the second semiconductor layer are further formed on the germanium-doped silicon layer. It is desirable to be provided.

  An integrated circuit is preferably formed in the second semiconductor layer. The integrated circuit preferably includes a driving circuit for the photoelectric conversion element.

  The photoelectric conversion element is preferably disposed on a submount substrate, and the photoelectric conversion element is disposed on the interposer via the submount substrate. Generally, GaAs or the like is used as the material of the photoelectric conversion element. However, this is delicate handling, and chipping or the like may occur depending on the handling method at the time of mounting, which may be defective. On the other hand, according to the optical waveguide module according to the present invention, since the photoelectric conversion element is arranged on the interposer via the submount substrate, chip chip defects due to handling can be effectively reduced. .

  Further, by using the submount substrate made of silicon or the like, it is possible to improve temperature characteristics due to a heat dissipation effect.

  Moreover, it is preferable to provide an alignment mark or the like on the submount substrate. Accordingly, when the photoelectric conversion element is mounted on the submount substrate, the optical axis can be easily adjusted based on the alignment mark. In addition, when the photoelectric conversion element is arranged on the interposer via the submount substrate, the assembly is further facilitated by using the alignment mark.

  Furthermore, it is preferable that a photodetector capable of monitoring the output of the light emitting element as the photoelectric conversion element is disposed on the submount substrate. For example, the photodetector can be formed by doping an impurity element on a silicon substrate as the submount substrate. By providing the photodetector on the submount substrate, the output of the light emitting element such as a semiconductor laser can be monitored, so that APC (auto power control) of the light emitting element becomes possible.

  In the optical waveguide module mounting structure of the present invention, the light receiving means as the photoelectric conversion element is preferably disposed on the interposer, or is preferably disposed on the mounting substrate. When the light receiving means is disposed on the mounting substrate, it is preferable that the guided light is reflected by the light emitting end face of the optical waveguide layer and the optical path is changed to the light receiving means.

  As described above, the optical waveguide module and the mounting structure thereof according to the present invention use a wafer having an SOI (Silicon On Insulator) structure, so that high-speed and low-power consumption operation in a digital circuit is possible, and an operation frequency in a high-frequency circuit. Can be improved and noise can be reduced, and latch-up can be completely suppressed and the soft error rate can be reduced.

  And with the effect by having used the wafer by SOI structure as mentioned above, since the said optical waveguide device and the said photoelectric conversion element are distribute | arranged to the said interposer, on the said mounting substrate or this mounting substrate Even if other mounted components are thermally deformed or deformed by an external force, the optical axis is difficult to shift through the interposer having high rigidity and high reliability compared to the mounting substrate, and the optical coupling efficiency is improved. It can dramatically improve and is highly productive.

  In addition, since the optical coupling loss can be reduced, it is possible to reduce the power consumption by suppressing the output of the photoelectric conversion element.

  In addition, the use of the interposer increases the degree of freedom in design, and as a result, the speed of product development can be improved and the cost can be reduced by sharing parts.

  Furthermore, alignment can be facilitated by using the interposer, and the cost for alignment can be reduced, so that a low-cost system can be provided.

  According to the present invention, an optical communication configured such that an optical signal efficiently incident on the optical waveguide layer is incident on the light receiving unit of the next stage circuit by arranging the light receiving unit in alignment with the optical waveguide layer. It can be effectively used for optical information processing.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

First Embodiment FIG. 1 is a schematic view of an optical waveguide module and its mounting structure according to the present invention.

  As shown in FIG. 1A, an optical waveguide module 1 according to the present embodiment includes an optical waveguide device 2, light incident means (for example, a light emitting element such as a semiconductor laser) 3 as the photoelectric conversion element, A light receiving means (for example, a light receiving element such as a photodiode or an optical fiber) 4 as a photoelectric conversion element is disposed in an interposer 5 such as ceramics. The optical waveguide module 1 according to the present invention is mounted on a mounting board (printed wiring board) 6 via an interposer 5.

  As shown in FIGS. 1A and 1B, the optical waveguide device 2 includes a first semiconductor layer 7, an insulating layer 8, and a second semiconductor layer 9 that are stacked in this order, and the first semiconductor layer 7. An optical waveguide layer 10 is formed between the first semiconductor layer 9 and the second semiconductor layer 9.

  In addition, it is desirable that the refractive index of the optical waveguide layer 10 is higher than the refractive indexes of the first semiconductor layer 7 and the insulating layer 8, thereby effectively guiding the optical signal 11 in the optical waveguide layer 10. Can do.

  Specifically, the optical waveguide layer 10 is preferably formed on the silicon substrate as the first semiconductor layer 7 by doping with an impurity element. The impurity element may be an element having a refractive index higher than that of silicon, and is preferably made of germanium, for example.

Further, a germanium-doped silicon layer as the optical waveguide layer 10 is formed on the silicon substrate 7, and a silicon oxide layer (SiO ₂ layer) as the insulating layer 8 and the second semiconductor are further formed on the germanium-doped silicon layer 10. It is desirable that a silicon layer as the layer 9 is provided.

  An integrated circuit 12 is preferably formed on the second semiconductor layer 9 (however, the integrated circuit is not shown in FIG. 1B). The integrated circuit 12 preferably includes a drive circuit (bipolar transistor, MOS transistor, etc.) for the light incident means 3 to the optical waveguide layer 10 and the light receiving means 4 for the light emitted from the optical waveguide layer 10.

  In the optical waveguide module 1 according to the present invention, the germanium-doped silicon layer 10 has a higher refractive index n than that of the silicon substrate 7 and the silicon oxide layer 8, and thus effectively functions as a waveguide for the optical signal 11. The wavelength passing through the germanium-doped silicon layer 10 is light in the near-infrared wavelength region of 970 nm or more, and a laser having a wavelength in the vicinity of 1.3 μm or 1.5 μm is generally used as the light source.

  For example, as shown in FIG. 1C, the light emitting element as the light incident means 3 includes clad layers 13a and 13b made of GaAs or the like, and an active layer 14 sandwiched between the clad layers 13a and 13b. Further, an electrode 15 is provided on the cladding layer 13a, and an electrode is also provided on the cladding layer 13b although not shown.

  The optical propagation mechanism of the optical waveguide module 1 according to the present invention is such that the optical signal 11 emitted from the light incident means (light emitting element) 3 is introduced from the light incident end face 16 into the germanium-doped silicon layer as the optical waveguide layer 10. The The optical signal 11 introduced into the optical waveguide layer 10 is guided through the optical waveguide layer 10 and emitted from the light emitting end face 17, and the emitted optical signal 11 is received by the light receiving means (light receiving element) 4. .

  Thus, since the optical waveguide module 1 and its mounting structure according to the present invention use a wafer having an SOI (Silicon On Insulator) structure, high-speed and low-power consumption operation in a digital circuit becomes possible, and an operating frequency in a high-frequency circuit. Can be improved and noise can be reduced, and latch-up can be completely suppressed and the soft error rate can be reduced.

  Since the optical waveguide device 2 and the photoelectric conversion elements 3 and 4 are arranged in the interposer 5 such as ceramics, together with the effect of using the wafer having the SOI structure as described above, the mounting substrate 6 and Even if other components (not shown) mounted on the mounting substrate 6 are thermally deformed or deformed by an external force, the optical axis is difficult to shift through the interposer 5 having higher rigidity than the mounting substrate 6. The optical coupling efficiency can be drastically improved and the productivity is excellent.

  In addition, since the optical coupling loss can be reduced, the output of the photoelectric conversion elements 3 and 4 can be suppressed and the power consumption can be reduced.

  Further, the use of the interposer 5 increases the degree of freedom in design, and as a result, the speed of product development can be improved and the cost can be reduced by sharing parts.

  Furthermore, the use of the interposer 5 facilitates the alignment and can reduce the cost for the alignment, so that a low-cost system can be provided.

Second Embodiment As shown in FIG. 2, the optical waveguide module according to the present embodiment is a submount in which light incident means (for example, a light emitting element such as a semiconductor laser) 3 as the photoelectric conversion element is made of silicon or the like. The light incident means 3 is disposed on the interposer 5 via the submount substrate 18 disposed on the substrate 18. The same applies to the light receiving means (for example, a light receiving element such as a photodiode) 4 as the photoelectric conversion element.

  In general, GaAs or the like is used as the material of the light emitting element 3 and the light receiving element 4, but this is delicate in handling, and depending on the handling method at the time of mounting, chip breakage or the like may occur, resulting in a defect. On the other hand, according to the present embodiment, since the light emitting element 3 and the light receiving element 4 as the photoelectric conversion elements are arranged on the interposer 5 through the submount substrate 18, chip defect due to handling is reduced. be able to.

  Further, by using the submount substrate 18 made of silicon or the like, it is possible to improve the temperature characteristics due to the heat dissipation effect.

  Further, as shown in FIG. 2B, an alignment mark 19 or the like may be provided on the submount substrate 18. As a result, the optical axis can be adjusted with reference to the alignment mark 19 when the light emitting element 3 and the light receiving element 4 are mounted, and the light emitting element 3 and the light receiving element 4 are connected to the interposer 5 via the submount substrate 18. The use of the alignment mark 19 when arranging in the assembly makes assembly easier.

  Further, as shown in FIG. 2C, it is preferable to provide a photodetector (PD) 20 on the submount substrate 18 on which the light emitting element 3 is mounted. Thereby, since the output of the light emitting element 3 such as a semiconductor laser can be monitored, the APC (auto power control) of the light emitting element 3 becomes possible. In this case, the photodetector 20 can be formed on the silicon substrate as the submount substrate 18 by doping with an impurity element.

  In the optical waveguide device 2 constituting the optical waveguide module 1 according to the present invention, the number, shape, and the like of the optical waveguide layer 10 can be selected as appropriate. For example, as shown in FIG. 3, a plurality of optical waveguide layers 10 are provided in the optical waveguide device 2, and the light incident means 3 such as the light emitting element is made to correspond to the light incident end face 16 of the optical waveguide layer 10, and You may arrange | position on the interposer 5 through the board | substrate 18. FIG. Moreover, all the light emitting elements 3 may be the same type (the wavelength of the emitted light is the same) or may be different types. Although not shown in FIG. 3, the integrated circuit is preferably incorporated in the second semiconductor layer 9 in the same manner as described above.

Third Embodiment As shown in FIG. 4, an ECL (Extra Cavity Laser) 21 may be used as the light emitting element as the light incident means. The ECL 21 includes a half mirror 22, an amplification medium 23 constituting a laser, a MEMS (Micro Electro Mechanical Systems) movable mirror 24, and an actuator 25 joined to the movable mirror 24. By moving the position of the movable mirror 24 by the actuator 25, the laser cavity length can be changed, and laser beams (λ1, λ2) 11 having different wavelengths can be generated. As a result, optical signals 11 having a plurality of wavelengths can be made incident on the optical waveguide layer 10. For example, by providing a light receiving element 4 that receives only a specific wavelength for each block, only blocks that require operation in the LSI are provided. Can deliver the clock.

Fourth Embodiment The light receiving means as the photoelectric conversion element may be a light receiving element such as a photodiode. For example, as shown in FIG. 5, the light receiving means may be disposed on the mounting substrate 6. Specifically, the light emitting end face 17 of the optical waveguide layer 10 is formed on an inclined surface, for example, a 45-degree mirror surface, and penetrates through the first semiconductor layer 7 and the region located immediately below the light emitting end face 17 in the interposer 5. A hole 26 is provided, and a recess 27 is provided in the mounting substrate 6, and the light receiving means 4 is disposed in the recess 27. As a result, the guided light 11 is reflected by the light emitting end face 17 of the optical waveguide layer 10 and the optical path is changed to the light receiving means 4.

  Also in this case, since the optical waveguide device 2 and the light incident means 3 are arranged in the interposer 5, the mounting substrate 6 and other components mounted on the mounting substrate 6 are deformed by heat or external force. Even if it happens, the optical axis is difficult to shift, and the optical coupling loss can be reduced.

  As mentioned above, although embodiment of this invention was described, the above-mentioned example can be variously modified based on the technical idea of this invention.

For example, although an example in which a germanium-doped silicon layer is used as the optical waveguide layer has been described, silicon oxide (SiO ₂ ) or the like can be used as the optical waveguide layer in addition to the germanium-doped silicon layer. For example, silicon oxide has a very high transmittance, and can transmit near-infrared laser light manufactured at a relatively low cost among communication lasers of 850 nm with low loss. Therefore, by using a structure in which the optical waveguide layer made of silicon oxide is further sandwiched between layers made of a material having a low refractive index, silicon oxide is effective as the optical waveguide layer in the same manner as the germanium-doped silicon layer described above. Can be functional.

  In addition, in order to introduce the optical signal into the optical waveguide layer, the optical signal is directly incident on the optical waveguide layer from the light incident means such as the light emitting element, and once collected by an optical component such as a lens. This can be performed by a lens coupling method in which light is used to reduce the beam diameter of an optical signal and then enter the optical waveguide layer.

  Further, the arrangement position of the light receiving means may be on the interposer as described above or on the mounting substrate, but is not particularly limited to this, and the conventional example as shown in FIG. As described above, the light emitting end face of the optical waveguide layer may be formed on a mirror surface, and the light receiving means may be disposed immediately above the center line of the light emitting end face of the optical waveguide layer. In this case, the optical signal guided through the optical waveguide layer is polarized in the vertical direction at the light output end face of the mirror surface of the optical waveguide layer, passes through a through-hole, and the light output from the optical waveguide layer. The light is received by the light receiving means arranged immediately above the center line of the end face.

1 is a schematic view of an optical waveguide module according to the present invention according to a first embodiment. FIG. It is the schematic of the optical waveguide module based on this invention by 2nd Embodiment. It is a schematic perspective view which shows the other example of the optical waveguide module based on this invention equally. It is the schematic of the optical waveguide module based on this invention by 3rd Embodiment. It is a schematic sectional drawing of the optical waveguide module based on this invention by 4th Embodiment. It is a schematic sectional drawing of the optical wiring structure using the wafer of SOI structure by a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Optical waveguide module, 2 ... Optical waveguide apparatus, 3 ... Light incident means, 4 ... Light receiving means,
5 ... Interposer, 6 ... Mounting substrate, 7 ... First semiconductor layer, 8 ... Insulating layer,
DESCRIPTION OF SYMBOLS 9 ... 2nd semiconductor layer, 10 ... Optical waveguide layer, 11 ... Optical signal, 12 ... Integrated circuit,
13a, 13b ... cladding layer, 14 ... active layer, 15 ... electrode, 16 ... light incident end face,
17 ... Light emitting end face, 18 ... Submount substrate, 19 ... Alignment mark,
20 ... Photo detector, 21 ... ECL, 22 ... Half mirror, 23 ... Amplification medium,
24 ... Movable mirror 25 ... Actuator 26 ... Through hole 27 ... Recess

Claims (15)

  An optical waveguide device in which a first semiconductor layer, an insulating layer, and a second semiconductor layer are stacked in this order, and an optical waveguide layer is formed between the first semiconductor layer and the second semiconductor layer; An optical waveguide module in which the photoelectric conversion element is disposed in the interposer.   The photoelectric conversion element is at least the light incident means of light incident means for making light incident on the optical waveguide layer of the optical waveguide device and light receiving means for receiving light emitted from the optical waveguide layer, The optical waveguide module according to claim 1.   The optical waveguide module according to claim 1, wherein the photoelectric conversion element is disposed on a submount substrate, and the photoelectric conversion element is disposed on the interposer via the submount substrate.   The optical waveguide module according to claim 3, wherein a photodetector capable of monitoring an output of a light emitting element as the photoelectric conversion element is disposed on the submount substrate.   The optical waveguide module according to claim 1, wherein an integrated circuit is formed in the second semiconductor layer.   The optical waveguide module according to claim 5, wherein the integrated circuit includes a drive circuit for the photoelectric conversion element.   The optical waveguide module according to claim 1, wherein a refractive index of the optical waveguide layer is higher than a refractive index of the first semiconductor layer and the insulating layer.   The optical waveguide module according to claim 7, wherein the optical waveguide layer is formed by doping an impurity element on a silicon substrate as the first semiconductor layer.   The optical waveguide module according to claim 8, wherein the impurity element is made of germanium.   A germanium-doped silicon layer as the optical waveguide layer is formed on the silicon substrate, and a silicon oxide layer as the insulating layer and a silicon layer as the second semiconductor layer are provided on the germanium-doped silicon layer. The optical waveguide module according to claim 9.   The optical waveguide module according to claim 4, wherein the photodetector is formed by doping an impurity element on a silicon substrate as the submount substrate.   An optical waveguide module mounting structure, wherein the optical waveguide module according to claim 1 is mounted on a mounting substrate via the interposer.   The optical waveguide module mounting structure according to claim 12, wherein the light receiving means according to claim 2 is arranged on the interposer.   The optical waveguide module mounting structure according to claim 12, wherein the light receiving unit according to claim 2 is arranged on the mounting substrate.   The optical waveguide module mounting structure according to claim 14, wherein the guided light is reflected by the light emitting end face of the optical waveguide layer and is converted into an optical path to the light receiving means.

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