JP4292476B2 - Optical waveguide module and optical information processing apparatus - Google Patents

Description

  The present invention relates to an optical waveguide module and an optical information processing apparatus.

  Currently, signal propagation and operation power supply between elements formed on the front end by transistors and capacitors formed on silicon in LSI (Large Scale Integration) chips or between blocks of these elements The back end connection wiring to be performed is all made by electrical transmission through a metal wire formed on the insulating film substrate. However, along with the recent increase in device operation speed due to the miniaturization of the scale, that is, the increase in MPU functionality, the amount of data exchange required in the chip has been significantly increased and the capacity has been increased, and the operation clock has been significantly increased in speed. ing.

  In particular, various problems have emerged in metal wiring that electrically distributes data and operation clock signals. Typical of these problems are the problems of signal degradation and transmission errors due to RC delay of signals due to resistance of metal wiring, parasitic capacitance, impedance mismatch, EMC / EMI, crosstalk, etc., and signal transmission due to significant miniaturization There are problems such as an increase in power consumption required for this, an increase in wiring length due to multilayering, and a decrease in yield.

  Up to now, as the design rules for higher integration and higher speed have been refined, the wiring has been repeatedly miniaturized. Every time, the back end is optimized by using various methods such as optimizing the arrangement structure and developing new materials. I came to improve and solve the wiring.

For example, from the 0.18 μm rule generation to the 0.13 μm generation in terms of design rules, wiring has been formed with a structure using SiO ₂ as an insulating film and aluminum as a metal conductor, but the 0.09 μm (90 nm) generation Then, instead of aluminum, copper with low specific resistance is used as the wiring metal material, and in the 65nm generation, which is said to be the state-of-the-art process that has begun mass production, a low dielectric constant film should be used in combination with copper wiring. Thus, a structure for reducing the total wiring RC delay is used.

  However, in recent years, the effects of optimizing the back-end wiring arrangement and the development of new materials such as copper and low dielectric constant films have been hampered by physical limitations, and the number of wiring layers has increased due to advanced miniaturization. In order to realize further higher functionality of the system in the future, it has become necessary to review the shrink itself based on the miniaturization of the simple semiconductor chip design rules. In recent years, various drastic measures have been proposed to solve these problems, but the following are representative examples.

  For example, the effective dielectric constant of the insulating film by the Hy-Brid structure can be reduced, or the back-end reverse scaling method can be used. The latter is a structure that suppresses wiring delay by expanding the upper-layer global wiring and semi-global wiring opposite to the lower-layer wiring while miniaturizing the lower-layer wiring with scaling shrinkage. In this way, various optimization structures, materials, and processes for back-end wiring have been devised and implemented. However, assuming the 42 nm Node and later that are currently in the research and development stage, before the process of miniaturizing the elements, The wiring structure for transmitting sufficient transmission capacity information in the necessary frequency band corresponding to the operating speed has already broken down, and some new method to replace shrinking with electrical signal transmission consisting of insulating film and metal Need to be introduced.

  On the other hand, in signal propagation between LSI chips, a method has been proposed in which an optical wiring using an optical waveguide made of a polymer resin is used to optically modulate an electric signal to greatly improve the signal transmission speed. This optical waveguide includes a clad layer and a core layer made of a polymer resin, and the core layer functions as an optical path by making the refractive index of the core layer higher than that of the clad layer.

  However, when the optical connection wiring structure using the above-mentioned optical waveguide is applied in signal propagation between elements formed on the front end by transistors, capacitors, etc. formed on silicon in an LSI chip or between blocks of these elements In addition to shrinking the core optical transmission physics, in addition to the circuit chips required for the system architecture such as the codec for output electrical signals to be transmitted and MUX / DEMUX, the drive circuit chip for the light emitting element, the light emitting element chip, the light receiving An element chip, an optical waveguide (optical path), an impedance matching circuit, and an IV conversion circuit are physically required at least, and the number of chips corresponding to the number of these elements cannot be reduced unless they can be formed monolithically.

  Therefore, it is fundamentally inevitable that the overall operation power consumption can be obtained by integrating the operation power consumption of the plurality of chips described above as a simple sum, alignment error due to mounting, yield reduction, and cost accumulation. It exists as a problem.

  As a technique for solving this problem, a structure has been proposed in which an SOI (Silicon On Insulator) structure wafer is used so that the plurality of circuit chips described above are partially integrated into one chip to achieve a complex function and a reduction in the number of elements. (For example, refer to Patent Document 1 below.)

  FIG. 8 is a schematic cross-sectional view showing an optical wiring structure formed using an SOI structure wafer.

As shown in FIG. 8, in the conventional optical wiring structure using the SOI structure wafer, the first silicon layer 50, the silicon oxide layer (SiO ₂ layer) 51, and the second silicon layer 52 are laminated in this order. In addition, an optical waveguide layer (for example, germanium-doped silicon layer) 53 is sandwiched between the silicon oxide layer 51 and the first silicon layer 50. A semiconductor integrated circuit 54 such as a bipolar transistor or a MOS transistor is incorporated on the second silicon layer 52. Further, a light emitting element 55 such as a laser is disposed at a position corresponding to the light incident end face 56 of the optical waveguide layer 53, and the light emitting end face 57 of the optical waveguide layer 53 is formed on a mirror surface. A light receiving element 58 such as a photodiode is disposed immediately above the center line of the end face 57.

  The light propagation mechanism of this optical wiring structure condenses the optical signal 59 a emitted from the light emitting element 55 by the optical component 60 such as a lens and introduces it to the optical waveguide layer 53. The optical signal 59 b introduced into the optical waveguide layer 53 is guided through the optical waveguide layer 53, is polarized in the vertical direction at the light exit end face 57 of the mirror surface, and is emitted through the through hole 61. The emitted light 59c is collected by an optical component 60 such as a lens and received by the light receiving element 58 disposed immediately above the center line of the light emitting end face 57 of the optical waveguide layer 53.

  By using such an optical wiring structure with a wafer having an SOI structure, high-speed and low-power consumption operation is possible in a digital circuit, and the operating frequency in a high-frequency circuit can be improved and noise can be reduced. Can be completely suppressed and the occurrence rate of soft errors can be reduced.

WO 2004/010192 A2 29. Jan 2004 (7th page, 16th line to 8th page, 20th line, FIG. 1)

  However, in the optical wiring structure using the SOI structure wafer according to the conventional example described above, it is common to separately mount a light-receiving element and a light-emitting element on a printed wiring board or LSI chip. Since an optical signal (for example, laser light) emitted from an element (for example, a laser) normally propagates while spreading at a predetermined angle, the emitted optical signal spreads larger than the light incident end face of the optical waveguide layer. The optical signal of the portion that protrudes from the light incident end face of the optical waveguide layer becomes a coupling loss.

  Further, in order to solve the above-described decrease in optical coupling efficiency due to the spread of the optical signal, the light signal emitted from the light emitting element is condensed using a refraction means such as a lens or a direction changing means such as a 45-degree bending mirror. There is also a means for making it incident on the optical waveguide layer. However, in this case, there is a problem that a loss due to surface reflection or bending by 45 degrees occurs and an optical signal is attenuated, and alignment is complicated.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide an optical waveguide module and an optical information processing apparatus that can reduce optical coupling loss and are easily aligned. There is to do.

That is, the present invention provides an optical waveguide device in which a first semiconductor layer, an insulating layer, and a second semiconductor layer are stacked in this order, and an optical waveguide layer is formed on the first semiconductor layer, and the optical waveguide. In an optical waveguide module having light incident means for making light incident on the optical waveguide layer of the device,
A concave portion reaching at least the optical waveguide layer from the second semiconductor layer is formed, and the light incident means is disposed in the concave portion in a state aligned with the light incident end face of the optical waveguide layer facing the concave portion. The present invention relates to an optical waveguide module.

  Further, the present invention relates to an optical information processing apparatus having the optical waveguide module of the present invention and a light receiving means for receiving light emitted from the optical waveguide layer.

  According to the optical waveguide module of the present invention, the concave portion reaching at least the optical waveguide layer from the second semiconductor layer is formed and aligned with the light incident end face of the optical waveguide layer facing the concave portion. Since the light incident means is disposed in the recess, the light incident means can be easily and accurately disposed in the vicinity of the light incident end face of the optical waveguide layer. Thus, the optical signal from the light incident means (light source) can be effectively incident on the optical waveguide layer, and optical coupling efficiency can be drastically improved without providing any optical components such as a lens as in the conventional example. It can be improved and has excellent productivity.

  In addition, since the light incident means can be disposed at a position close to the light incident end face of the optical waveguide layer, the output of the light incident means can be suppressed and the power consumption can be reduced.

  Furthermore, since the cost for forming and aligning optical components such as lenses can be reduced, a low-cost system can be provided.

  Since the optical waveguide module of the present invention has the excellent effects as described above, it can be suitably used as an optical information processing apparatus such as optical communication.

  In the optical waveguide module according to the aspect of the invention, it is preferable that the concave portion further reaches the first semiconductor layer from the optical waveguide layer. Thereby, the said recessed part can be formed more accurately and the precision of alignment can be improved more.

  Further, the depth of the recess is formed so that the light incident means and the second semiconductor layer have the same surface height, and is aligned with the light incident end face of the optical waveguide layer. It is preferable that the light incident means is disposed in the recess. In this case, since the light incident means and the second semiconductor layer have the same surface height, even if a second insulating layer is further provided on the second semiconductor layer including the light incident means, The thickness of the second insulating layer can be further reduced, and the optical waveguide module and the optical information processing apparatus according to the present invention can be further miniaturized.

  Moreover, it is preferable that wiring is provided on the second semiconductor layer, and the electrode of the light incident means and the wiring are connected. Here, when the electrodes of the light incident means are respectively formed on surfaces facing each other, the wiring may be provided on the second semiconductor layer and in the recess.

  The electrodes of the light incident means may be formed only on the surface of the second semiconductor layer. For example, the heights of both electrode surfaces of the light incident means are different from each other by a step. It is preferable that In this case, since the electrode of the light incident means is formed only on the surface of the second semiconductor layer, the wiring may be provided only on the second semiconductor layer. The forming process can be further simplified.

  In addition, it is desirable that the refractive index of the optical waveguide layer is higher than the refractive indexes of the first semiconductor layer and the insulating layer, so that an effective optical signal can be guided in the optical waveguide layer. it can.

  Specifically, it is preferable that the optical waveguide layer is formed by doping an impurity element on a silicon substrate as the first semiconductor layer. The impurity element may be an element having a refractive index higher than that of silicon, and is preferably made of germanium, for example.

  Further, a germanium-doped silicon layer as the optical waveguide layer is formed on the silicon substrate, and a silicon oxide layer as the insulating layer and a silicon layer as the second semiconductor layer are further formed on the germanium-doped silicon layer. It is desirable to be provided.

  An integrated circuit is preferably formed in the second semiconductor layer. The integrated circuit preferably includes at least a drive circuit for the light incident means.

  Furthermore, it is preferable that a second insulating layer is further provided on the second semiconductor layer including the light incident means, and another integrated circuit is further formed on the second insulating layer to form SiP ( System in Package).

  As described above, since the optical waveguide module and the optical information processing apparatus according to the present invention use a wafer having an SOI (Silicon On Insulator) structure, high-speed and low power consumption operation in a digital circuit is possible, and an operation frequency in a high-frequency circuit is achieved. Can be improved and noise can be reduced, and latch-up can be completely suppressed and the soft error rate can be reduced.

  In addition to the effect of using the wafer having the SOI structure as described above, the concave portion reaching at least the optical waveguide layer from the second semiconductor layer is formed, and the light of the optical waveguide layer facing the concave portion is formed. Since the light incident means is disposed in the concave portion in a state of being aligned with the incident end face, the light incident means is easily and highly accurately disposed at a position close to the light incident end face of the optical waveguide layer. Can do. Thus, the optical signal from the light incident means (light source) can be effectively incident on the optical waveguide layer, and optical coupling efficiency can be drastically improved without providing any optical components such as a lens as in the conventional example. It can be improved and has excellent productivity.

  In addition, since the light incident means can be disposed at a position close to the light incident end face of the optical waveguide layer, the output of the light incident means can be suppressed and the power consumption can be reduced.

  Furthermore, since the cost for forming and aligning optical components such as lenses can be reduced, a low-cost system can be provided.

  In the present invention, the light receiving means (for example, a light receiving element (such as an optical wiring or a photodetector)) is disposed in alignment with the light emitting end face of the optical waveguide layer, thereby efficiently entering the light waveguide layer. The present invention can be effectively used for optical information processing such as optical communication configured to cause a signal to be incident on the light receiving means of the next stage circuit.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

First Embodiment FIG. 1 is a schematic diagram of an optical information processing apparatus according to the present invention. The optical information processing apparatus 1 according to the present embodiment includes an optical waveguide module 2 according to the present invention and a light receiving means (for example, a light receiving element such as a photodiode or an optical fiber) that receives light emitted from the optical waveguide layer 3. Have.

  In the optical waveguide module 2 according to the present invention, the first semiconductor layer 5, the insulating layer 6, and the second semiconductor layer 7 are laminated in this order, and the optical waveguide layer 3 is formed on the first semiconductor layer 5. An optical waveguide device 8 and a light incident means (for example, a light emitting element such as a laser) 9 for making light incident on the optical waveguide layer 3 of the optical waveguide device 8 are provided. Then, a recess 10 reaching at least the optical waveguide layer 3 from the second semiconductor layer 7 is formed, and the light incident means 9 is recessed with being aligned with the light incident end face 11 of the optical waveguide layer 3 facing the recess 10. 10 is arranged.

  In the optical waveguide module 2 of the present invention, the concave portion 10 can be arbitrarily set depending on the shape, size, etc. of the light incident means 9. In particular, the concave portion 10 extends from the optical waveguide layer 3 to the first semiconductor layer 5. Preferably reached. Thereby, the recessed part 10 can be formed more accurately and the precision of alignment can be improved more.

  FIG. 2 is a schematic sectional view of a light emitting element (for example, a Fabry-Perot type laser diode) used as the light incident means 9. The light emitting device 9 includes an n-type cladding layer (n-InP) 12, a p-type cladding layer (p-InP) 13, an active layer (n-InGaAsP) 14 sandwiched between the cladding layers 12 and 13, The insulating film 15 on the p-type cladding layer 13, the p-electrode 16 disposed on the insulating film 15, and the n-electrode 17 disposed on the n-type cladding layer 12. For example, the light emitting element 9 has a length and width of 100 to 300 μm, a height of 50 to 100 μm, a thickness of the n-electrode 17 and the n-type cladding layer 12 of 2 to 3 μm, and a thickness of the active layer 14 of 1 to 2 μm. It can be.

  As shown in FIG. 1, a wiring 18 is provided on the second semiconductor layer 7 and a wiring 18 ′ is provided in the recess 10 so that the electrode 16 of the light emitting element 9 and the wiring 18 are connected by a wire 22 or the like. That's fine. Here, the electrode 17 and the wiring 18 ′ of the light emitting element 9 can be connected by disposing the light emitting element 9 in the recess 10 in a state of being aligned with the light incident end face 11 of the optical waveguide layer 3.

  In addition, it is desirable that the refractive index of the optical waveguide layer 3 is higher than the refractive indexes of the first semiconductor layer 5 and the insulating layer 6, so that the optical waveguide layer 3 can effectively guide the optical signal 20. Can do.

  Specifically, the optical waveguide layer 3 is preferably formed on the silicon substrate as the first semiconductor layer 5 by doping with an impurity element. The impurity element may be an element having a refractive index higher than that of silicon, and is preferably made of germanium, for example.

Further, a germanium-doped silicon layer as the optical waveguide layer 3 is formed on the silicon substrate 5, and a silicon oxide layer (SiO ₂ layer) as the insulating layer 6 and the second semiconductor are further formed on the germanium-doped silicon layer 3. It is desirable that a silicon layer as the layer 7 is provided.

  An integrated circuit 19 is preferably formed on the second semiconductor layer 7. The integrated circuit 19 preferably has a drive circuit (bipolar transistor, MOS transistor, etc.) for the light incident means 9 to the optical waveguide layer 3 and the light receiving means 4 for the light emitted from the optical waveguide layer 3.

  In the optical waveguide module 2 according to the present invention, the germanium-doped silicon layer 3 has a higher refractive index n than the silicon substrate 5 and the silicon oxide layer 6, and therefore effectively functions as a waveguide for the optical signal 20. The wavelength passing through the germanium-doped silicon layer 3 is light in the near-infrared wavelength region of 970 nm or more, and a laser having a wavelength in the vicinity of 1.3 μm or 1.5 μm is generally used as the light source.

  The optical propagation mechanism of the optical information processing apparatus 1 according to the present invention is such that the optical signal 20 emitted from the light incident means (light emitting element) 9 is introduced from the light incident end face 11 into the germanium-doped silicon layer as the optical waveguide layer 3. Is done. The optical signal 20 introduced into the optical waveguide layer 3 is guided through the optical waveguide layer 3 and emitted from the light emitting end face 21, and the emitted optical signal 20 is received by the light receiving means (light receiving element) 4. .

  As described above, since the optical waveguide module 2 and the optical information processing apparatus 1 according to the present invention use a wafer having an SOI (Silicon On Insulator) structure, high-speed and low-power consumption operation in a digital circuit is possible, and in a high-frequency circuit. The operating frequency can be improved and noise can be reduced, and latch-up can be completely suppressed and the soft error rate can be reduced.

  In addition to the effect of using the wafer having the SOI structure as described above, a recess 10 reaching at least the optical waveguide layer 3 from the second semiconductor layer 7 is formed, and the light of the optical waveguide layer 3 facing the recess 10 is formed. Since the light incident means 9 is disposed in the concave portion 10 while being aligned with the incident end face 11, the light incident means 9 can be easily and accurately disposed near the light incident end face 11 of the optical waveguide layer 3. Can do. As a result, the optical signal 20 from the light source 9 can be effectively incident on the optical waveguide layer 3 and the optical coupling efficiency can be dramatically improved without providing any optical components such as a lens as in the conventional example. And is highly productive.

  Further, since the light incident means 9 can be disposed in the vicinity of the light incident end face 11 of the optical waveguide layer 3, the output of the light incident means 9 can be suppressed and the power consumption can be reduced.

  Furthermore, since the cost for forming and aligning optical components such as lenses can be reduced, a low-cost system can be provided.

  Hereinafter, an example of a method for manufacturing the optical waveguide module 2 and the optical information processing apparatus 1 according to the present invention will be described with reference to FIGS.

First, the silicon substrate (the first semiconductor layer) 5 as shown in FIG. 3A is doped with, for example, germanium as the impurity element as shown in FIG. 3B. Here, the impurity element is doped into the silicon substrate by ion introduction. In ion implantation, the ion irradiation energy and the ion doping amount may be appropriately selected. For example, the ion irradiation energy may be appropriately selected in the range of 10 keV to 500 keV, and the ion doping amount is 1 × 10 ^15. ions / cm ² ~1 × 10 ¹⁷ may be appropriately selected in the range of ions / cm ^2.

On the other hand, as shown in FIG. 3C, a second silicon substrate 7 ′ with a silicon oxide layer (SiO ₂ ) (the insulating layer) 6 is produced.

  As shown in FIG. 3 (d), a germanium-doped silicon substrate 3 as shown in FIG. 3 (b) is added to a second silicon substrate 7 with a silicon oxide layer 6 as shown in FIG. 3 (c). 'Is bonded on the silicon oxide layer 6 side. Next, as shown in FIG. 4E, the second silicon substrate 7 ′ is polished to a predetermined thickness to form the silicon layer 7 as the second semiconductor layer. To do.

  Next, as shown in FIG. 4F, the recess 10 is formed by ion milling or physical processing. At this time, the shape, size, etc. of the recess 10 can be arbitrarily set in accordance with the shape, size, etc. of the light-emitting element 9 to be arranged in a later step. For example, the first semiconductor further from the optical waveguide layer 3 It is preferable that layer 5 is reached.

  Next, as shown in FIG. 4G, wirings 18 and 18 ′ for supplying current to the light emitting element 9 are formed on the second semiconductor layer 7 and in the recess 10 by a technique such as plating. Then, as shown in FIG. 5H, the light emitting element 9 as shown in FIG. 2 is arranged by aligning the active layer 14 that emits light and the light incident end face 11 of the optical waveguide layer 3 in the recess 10. To do.

  Next, as shown in FIG. 5I, the p-electrode (not shown) of the light-emitting element 9 and the wiring 18 are connected using a wire 22 or the like. The n electrode (not shown) of the light emitting element 9 and the wiring 18 ′ are connected by disposing the light emitting element 9 in the recess 10. As described above, the optical waveguide module 2 according to the present invention can be easily manufactured.

  Then, as shown in FIG. 5 (j), the light receiving means 4 is arranged in alignment with the light emitting end face 21 of the optical waveguide layer 3, and the integrated circuit 19 is formed on the silicon layer 7 as the second semiconductor layer. In particular, drive circuits for the light emitting element 9 and the light receiving means 4 are incorporated.

  As described above, the optical waveguide module 2 and the optical information processing apparatus 1 according to the present invention can be easily manufactured.

Second Embodiment As shown in FIG. 2, a general single-surface-emitting semiconductor laser diode 9 has a height of about 80 μm, but the active layer 14 is biased to one side, and an n-electrode It is often at a position of 5 to 10 μm from the 17th surface. Therefore, when the n-electrode 17 is joined to the bottom surface of the recess 10, that is, the wiring 18 ′ as in the first embodiment, the surface height of the light emitting element 9 is several tens of times higher than the surface height of the second semiconductor layer 7. It will protrude by μm.

  Therefore, in the present embodiment, as shown in FIG. 6A, the depth of the recess 10 is formed so that the light emitting element 9 and the second semiconductor layer 7 have the same surface height. A light emitting element 9 as shown in FIG. 5 is vertically inverted from the first embodiment and arranged in the recess 10.

  Thereby, since the light emitting element 9 and the second semiconductor layer 7 have the same surface height, for example, as shown in FIG. 6B, the second semiconductor layer 7 including the light emitting element 9 is further provided with the second surface height. Even if another insulating circuit 23 is provided on the second insulating layer 23 and another integrated circuit 19 ′ is arranged on the second insulating layer 23 to form SiP, the second insulating layer 23 can be made thinner. The optical waveguide module 2 and the optical information processing apparatus 1 according to the present invention can be further miniaturized.

Third Embodiment As shown in FIG. 7A, the light emitting element as the light incident means has electrodes 16 and 17 formed only on the surface side of the second semiconductor layer 7. In addition, it is preferable that the heights of the surfaces of both electrodes 16 and 17 are different from each other depending on the level difference. In this case, since the electrodes 16 and 17 of the light emitting element 9 are formed only on the surface of the second semiconductor layer 7, the wirings 18 and 18 ′ are connected to the second semiconductor layer 7 as shown in FIG. It suffices to provide only on the semiconductor layer 7, and the formation process of the wirings 18 and 18 'can be further simplified.

  As mentioned above, although embodiment of this invention was described, the above-mentioned example can be variously modified based on the technical idea of this invention.

For example, although an example in which a germanium-doped silicon layer is used as the optical waveguide layer has been described, silicon oxide (SiO ₂ ) or the like can be used as the optical waveguide layer in addition to the germanium-doped silicon layer. For example, silicon oxide has a very high transmittance, and can transmit near-infrared laser light manufactured at a relatively low cost among communication lasers of 850 nm with low loss. Therefore, by using a structure in which the optical waveguide layer made of silicon oxide is further sandwiched between layers made of a material having a low refractive index, silicon oxide is effective as the optical waveguide layer in the same manner as the germanium-doped silicon layer described above. Can be functional.

  Further, as shown in FIG. 5 (j), an example in which the integrated circuit 19 is incorporated in the second semiconductor layer 7 after the optical waveguide module 2 according to the present invention is manufactured has been described. After manufacturing the optical waveguide device 8 shown, the integrated circuit 19 may be incorporated in the second semiconductor layer 7.

  Furthermore, the arrangement position of the light receiving means is not particularly limited, and as described above, the light receiving means such as a light receiving element or an optical fiber may be arranged in alignment with the center line of the light emitting end face of the optical waveguide layer. Alternatively, or as in the conventional example shown in FIG. 8, the light emitting end face of the optical waveguide layer is formed on a mirror surface, and the light receiving means is disposed immediately above the center line of the light emitting end face of the optical waveguide layer. You may arrange. In this case, the optical signal guided through the optical waveguide layer is polarized in the vertical direction at the light output end face of the mirror surface of the optical waveguide layer, passes through a through-hole, and the light output from the optical waveguide layer. The light is received by the light receiving means arranged immediately above the center line of the end face.

It is a schematic sectional drawing of the optical waveguide module and optical information processing apparatus based on this invention by 1st Embodiment. FIG. 2 is a schematic cross-sectional view of an example of a light emitting element as the light incident means used in the optical waveguide module according to the present invention. FIG. 3 is a schematic cross-sectional view showing an example of a method for manufacturing an optical waveguide module and an optical information processing device according to the present invention in the order of steps. FIG. 3 is a schematic cross-sectional view showing an example of a method for manufacturing an optical waveguide module and an optical information processing device according to the present invention in the order of steps. FIG. 3 is a schematic cross-sectional view showing an example of a method for manufacturing an optical waveguide module and an optical information processing device according to the present invention in the order of steps. It is a schematic sectional drawing of the optical waveguide module and optical information processing apparatus based on this invention by 2nd Embodiment. It is a schematic sectional drawing which shows the optical waveguide module and optical information processing apparatus based on this invention, and the other example of the light emitting element as said light incident means by 3rd Embodiment. It is a schematic sectional drawing of the optical wiring structure using the wafer of SOI structure by a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Optical information processing apparatus, 2 ... Optical waveguide module, 3 ... Optical waveguide layer, 4 ... Light receiving means,
5 ... 1st semiconductor layer, 6 ... Insulating layer, 7 ... 2nd semiconductor layer, 7 '... 2nd silicon base | substrate,
8 ... Optical waveguide device, 9 ... Light incident means, 10 ... Recess, 11 ... Light incident end face,
12 ... n-type cladding layer, 13 ... p-type cladding layer, 14 ... active layer, 15 ... insulating film,
16 ... p electrode, 17 ... n electrode, 18, 18 '... wiring, 19, 19' ... integrated circuit,
20 ... optical signal, 21 ... light emitting end face, 22 ... wire, 23 ... second insulating layer

Claims (15)

An optical waveguide device in which a first semiconductor layer, an insulating layer, and a second semiconductor layer are stacked in this order, and an optical waveguide layer is formed on the first semiconductor layer, and the optical waveguide layer of the optical waveguide device In an optical waveguide module having light incident means for making light incident on
A concave portion reaching at least the optical waveguide layer from the second semiconductor layer is formed, and the light incident means is disposed in the concave portion in a state aligned with the light incident end face of the optical waveguide layer facing the concave portion. An optical waveguide module characterized by comprising:   The optical waveguide module according to claim 1, wherein the concave portion further extends from the optical waveguide layer to the first semiconductor layer.   2. The optical waveguide module according to claim 1, wherein the depth of the recess is formed such that the light incident means and the second semiconductor layer have an equivalent surface height. 3.   The optical waveguide module according to claim 1, wherein a wiring is provided on the second semiconductor layer, and an electrode of the light incident means and the wiring are connected.   The optical waveguide module according to claim 4, wherein the electrode of the light incident means is formed only on the surface of the second semiconductor layer on the surface side.   The optical waveguide module according to claim 5, wherein heights of both electrode surfaces of the light incident means are different from each other by a step.   The optical waveguide module according to claim 1, wherein an integrated circuit is formed in the second semiconductor layer.   The optical waveguide module according to claim 7, wherein the integrated circuit includes at least a drive circuit for the light incident means.   The optical waveguide module according to claim 7, wherein a second insulating layer is further provided on the second semiconductor layer including the light incident means.   The optical waveguide module according to claim 1, wherein a refractive index of the optical waveguide layer is higher than a refractive index of the first semiconductor layer and the insulating layer.   The optical waveguide module according to claim 10, wherein the optical waveguide layer is formed by doping an impurity element on a silicon substrate as the first semiconductor layer.   The optical waveguide module according to claim 11, wherein the impurity element is made of germanium.   A germanium-doped silicon layer as the optical waveguide layer is formed on the silicon substrate, and a silicon oxide layer as the insulating layer and a silicon layer as the second semiconductor layer are provided on the germanium-doped silicon layer. The optical waveguide module according to claim 11.   An optical information processing apparatus comprising: the optical waveguide module according to any one of claims 1 to 13; and a light receiving unit configured to receive light emitted from the optical waveguide layer.   The optical information processing apparatus according to claim 14, wherein the light receiving unit is disposed in alignment with a light emitting end face of the optical waveguide layer.

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