JP2006051164A - Artificial retina and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily manufacture an artificial retina on a curved flexible material. <P>SOLUTION: The artificial retina (NVC) is manufactured by layering a plurality of thin film devices A1-A4 constituting the artificial retina (NVC), while being separated and transferred, one by one on the curved flexible material 60. The subject method for manufacture can simplify the manufacturing process as compared with conventional technologies using a silicon wafer. The artificial retina can be easily manufactured even on the curved flexible material 60. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an artificial retina and a method for manufacturing the same, and more particularly to a technique for manufacturing an artificial retina using a peeling transfer method.

Conventionally, development of an artificial retina (artificial organ) that detects a light signal instead of a retina damaged by a disease such as retinitis pigmentosa or macular degeneration and transmits information to the optic nerve has been studied. For example, since the retina is composed of cells with multiple functions (visual cells, horizontal cells, bipolar cells, ganglion cells) in a very thin part of the fundus, physiological research on these cells, etc. It is proposed that a new information processing system incorporating the mechanism clarified by the above will be realized by LSI chips for the same functions as cells, and these LSI chips will be stacked three-dimensionally to produce an artificial retina ( Non-patent documents 1, 2).
http://www.sd.mech.tohoku.ac.jp/research/vision/ semiconductor FPD World 2002.1 P40

  However, in order to stack LSI chips three-dimensionally by the method disclosed in the above-mentioned non-patent document, formation of embedded wiring penetrating the silicon wafer, polishing for thinning the silicon wafer, Various technical problems remain such as formation of fine bumps for connection, precise positioning in bonding of LSI chips, and establishment of an adhesion technique that can withstand the manufacturing process.

  Furthermore, in order to embed the artificial retina in the bottom of the eyeball, it is necessary to establish a technique for forming the artificial retina on a curved flexible material. It is difficult to form an artificial retina on a flexible material.

  Accordingly, an object of the present invention is to propose a technique for easily manufacturing an artificial retina on a curved flexible material.

  In order to solve the above problems, in the method for manufacturing an artificial retina according to the present invention, a plurality of thin film devices constituting the artificial retina are sequentially laminated on a curved flexible material while being peeled and transferred to manufacture an artificial retina. . Since the artificial retina can be manufactured by stacking the thin film devices constituting the artificial retina while peeling and transferring, the manufacturing process can be simplified as compared with the conventional technique using a silicon wafer. Moreover, an artificial retina can be easily manufactured even on a curved flexible material. Here, the “thin film device” refers to a functional element constituting an artificial retina, for example, a photoelectric conversion element, a pixel circuit, an amplification element, a pulse modulation circuit, and the like. These thin film devices are constituted by circuit elements such as polysilicon TFTs and photodiodes.

  In the artificial retina manufacturing method of the present invention, a photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies the electrical signal photoelectrically converted by the photoelectric conversion element, and an amplification element A pulse modulation circuit for pulse-modulating the electric signal amplified by the above and supplying the pulse signal to the optic nerve of the human body is sequentially laminated on the curved flexible material while being peeled and transferred to manufacture an artificial retina. Since the artificial retina can be manufactured by laminating the photoelectric conversion elements, pixel circuits, amplification elements, and pulse modulation circuits that make up the artificial retina while peeling and transferring them, the manufacturing process is simple compared to conventional technologies using silicon wafers. Can be

  In the artificial retina manufacturing method of the present invention, a photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies the electrical signal photoelectrically converted by the photoelectric conversion element, and an amplification element A method for manufacturing an artificial retina comprising a pulse modulation circuit that modulates an electric signal amplified by a pulse signal and supplies a pulse signal to the optic nerve of a human body on a curved flexible material, formed on a first substrate Peeling and transferring the pulse modulation circuit formed on the temporary substrate, peeling and transferring the amplification element formed on the second substrate onto the pulse modulation circuit peeled and transferred onto the temporary substrate, A pixel circuit formed by peeling and transferring a pixel circuit formed on the three substrates onto the amplification element stacked on the temporary substrate, and a pixel formed by stacking the photoelectric conversion elements formed on the fourth substrate on the temporary substrate Delamination on circuit And comprising a step of forming an artificial retina, a step of peeling transfer the artificial retina formed on the temporary substrate on a curved flexible material and. Since the artificial retina can be manufactured by laminating the photoelectric conversion elements, pixel circuits, amplification elements, and pulse modulation circuits that make up the artificial retina while peeling and transferring them, the manufacturing process is simple compared to conventional technologies using silicon wafers. Can be

  In the artificial retina manufacturing method of the present invention, a photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies the electrical signal photoelectrically converted by the photoelectric conversion element, and an amplification element A method for manufacturing an artificial retina comprising a pulse modulation circuit that modulates an electric signal amplified by a pulse signal and supplies a pulse signal to the optic nerve of a human body on a curved flexible material, formed on a first substrate Peeling and transferring the pulse modulation circuit formed on the temporary substrate, peeling and transferring the amplification element formed on the second substrate onto the pulse modulation circuit peeled and transferred onto the temporary substrate, A process of peeling and transferring the pixel circuit and photoelectric conversion element formed on the three substrates onto the amplification element stacked on the temporary substrate to form an artificial retina; and the artificial retina formed on the temporary substrate in a curved shape On flexible material And a step of peeling transfer. By forming the pixel circuit and the photoelectric conversion element in the same layer, the number of peeling and transferring operations can be reduced, and the manufacturing process of the artificial retina can be further simplified.

  The artificial retina of the present invention is formed by laminating and transferring a plurality of thin film devices constituting the artificial retina onto a curved flexible material. By forming the artificial retina on a curved flexible material, the artificial retina can be easily embedded in the eyeball.

  The artificial retina of the present invention is amplified by a photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies the electrical signal photoelectrically converted by the photoelectric conversion element, and an amplification element. A pulse modulation circuit that modulates the electric signal and supplies the pulse signal to the human optic nerve is peeled and transferred onto a curved flexible material. By forming the artificial retina on a curved flexible material, the artificial retina can be easily embedded in the eyeball.

  Embodiments of the present invention will be described below with reference to the drawings. The artificial retina NVC of the present invention is photoelectrically converted by a photoelectric conversion element (photodiode array) A4 that converts incident light into an electrical signal, a pixel circuit (drive circuit) A3 that drives the photoelectric conversion element A4, and a photoelectric conversion element A4. A three-dimensional stack of an amplification element A2 that amplifies the electrical signal and a pulse modulation circuit (pulse modulator) A1 that pulse-modulates the electrical signal amplified by the amplification element A2 and supplies the pulse signal to the optic nerve of the human body. It has a three-dimensional laminated structure. The pulse modulation circuit A1 corresponds to a ganglion cell circuit, the amplification element A2 and the pixel circuit A3 correspond to a horizontal cell circuit and a bipolar cell circuit, and the photoelectric conversion element A4 corresponds to a photoreceptor cell circuit. The human initial visual mechanism is composed of photoreceptor cells, horizontal cells, and bipolar cells, and the mechanism will be briefly described. When a photoreceptor receives light, only the light receiving portion is excited, and the excitation is transmitted to the underlying horizontal cells. A horizontal cell is planarly connected to six adjacent horizontal cells, and due to the transmission through this connection, the excitement of surrounding horizontal cells changes gently so as to travel through the network. Furthermore, the bipolar cell is coupled to both the photoreceptor cell and the horizontal cell, and is excited corresponding to the difference in the excitation intensity between the photoreceptor cell and the horizontal cell. This excitement is further transmitted to the lower layer, finally reaching the brain, and object recognition is performed. The above-described thin film devices (photoelectric conversion element A4, pixel circuit A3, amplification element A2, and pulse modulation circuit A1) are configured as a visual information processing system that incorporates a mechanism that has been clarified by physiological studies of these cells. ing.

  In the present invention, an artificial retina NVC can be manufactured by three-dimensionally laminating these four types of thin film devices using a peeling transfer method. Here, each of the four types of thin film devices may be arranged in a single layer to form a four-layer structure (Example 1), or the photoelectric conversion element A4 and the pixel circuit A3 may be included in the same layer (the same device layer). Then, another thin film device (pulse modulation circuit A1, amplification element A2) may be arranged in a single layer to form a three-layer structure (Example 2). Further, the artificial retina NVC may be manufactured by including two or more thin film devices arbitrarily selected from these four types of thin film devices in the same layer. The term “artificial retina” used in the present specification can also be referred to as “artificial retina chip”, “artificial retina circuit”, and “artificial retina device”.

  In this embodiment, the pulse modulation circuit A1 is arranged in the first layer, the amplification element A2 is arranged in the second layer, the pixel circuit A3 is arranged in the third layer, and the photoelectric conversion element A4 is arranged in the fourth layer. Then, an artificial retina NVC is manufactured (four-layer structure) by sequentially laminating and transferring onto a curved flexible material.

  First, the pulse modulation circuit A1 formed on the first substrate (first transfer source substrate) 10 is temporarily bonded to the temporary substrate 50 (FIG. 1A). The pulse modulation circuit A1 is composed of various circuit elements such as a thin film transistor Tr1 formed on a base layer 12 such as a silicon oxide film (here, only the thin film transistor Tr1 is illustrated). A release layer 11 is formed between the base layer 12 and the first substrate 10. The thin film transistor Tr1 includes a silicon layer (including a channel region 14c, a drain region 14d, and a source region 14c) 14 formed on the base layer 12, a gate insulating film 13 covering the silicon layer 14, and a channel region via the gate insulating film 13. The gate electrode 15g formed on 14c, the interlayer insulating film 16, the thin film transistor Tr1 and wiring 17 for connecting other circuit elements, and the like. A wiring 15 is formed in the same layer as the gate electrode 15g. The upper layer of the thin film transistor Tr1 is covered with a planarizing film 18. The flattening film 18 has a contact hole 18h for electrically connecting the pulse modulation circuit A1 and the optic nerve of the human body. The wiring 17 is formed with a plug 19 for connecting the pulse modulation circuit A1 and the amplifying element A2. On the other hand, the temporary substrate (transfer destination substrate) 50 is coated with a water-soluble adhesive 51 for temporarily bonding the pulse modulation circuit A1.

  Here, the first substrate 10 is desirably made of a light transmissive material, preferably has a light transmittance of 10% or more, and more preferably 50% or more. If the light transmittance is too low, the attenuation of the irradiation light becomes large, and a large irradiation energy is required to cause the peeling layer 11 to undergo intra-layer peeling or interfacial peeling. The first substrate 10 is preferably made of a material having a thermal strain point higher than the process temperature (350 ° C. to 1000 ° C.), such as quartz glass, soda glass, Corning, Nippon Electric Glass OA-2, etc. Heat resistant glass, synthetic resin and the like are suitable. Although the thickness of the 1st board | substrate 10 is not specifically limited, The film thickness of about 0.1-5.0 mm is preferable and about 0.5-5.0 mm is more preferable. In order to make the amount of transmitted light uniform, it is desirable that the thickness of the first substrate 10 be uniform.

The release layer 11 is a thin film configured to cause in-layer peeling and / or interfacial peeling upon irradiation with irradiation light. By receiving the irradiation light, an interatomic or molecular substance of the substance constituting the release layer 11 is formed. The bond strength between them disappears or decreases. Examples of causes that cause in-layer separation or interface separation include ablation and gas release. Ablation means that a solid material that has absorbed irradiated light is excited photochemically or thermally, and the surface or internal atomic or molecular bonds are cut and released. Mainly, the constituent material of the release layer 11 All or part of it is accompanied by phase change such as melting and transpiration. Examples of the composition of the release layer 11 include (1) amorphous silicon, (2) silicon oxide, silicate compound, titanium oxide, titanium oxide, zirconium oxide, zirconate compound, lanthanum oxide, and lanthanum oxide compound. Examples include various oxide ceramics and dielectrics. Examples of the semiconductor silicon oxide include SiO, SiO ₂ , Si ₃ O _2, and examples of the silicate compound include K ₂ SiO ₃ , Li ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , and Na ₂ SiO _3. It is done. Examples of titanium oxide include TiO, Ti ₂ O ₃ , and TiO _2. Examples of titanic acid compounds include BaTiO ₄ , BaTiO ₃ , Ba ₂ Ti ₉ O ₂₀ , BaTi ₅ O ₁₁ , SrTiO ₃ , PbTiO ₃ , Examples thereof include MgTiO ₃ , ZrTiO ₂ , SnTiO ₄ , Al ₂ TiO ₅ , and FeTiO ₃ . Examples of the zirconium oxide include ZrO ₂ , and examples of the zirconate compound include BaZrO ₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , and K ₂ ZrO ₃ .

Other examples of the release layer 11 include (3) ceramics such as PZT, PLZT, PLLZT, and PBZT, or ferroelectrics, and (4) nitride ceramics such as silicon nitride, aluminum nitride, and titanium nitride, ( 5) Organic polymer materials and (6) metals. Examples of organic polymer materials include —CH ₂ —, —CO— (ketone), —CONH— (amide), —NH— (imide), —COO— (ester), —N═N— (azo), There is no particular limitation as long as it has a bond such as —CH═N— (Schiff), particularly if it has many such bonds. Further, the organic polymer material may have an aromatic hydrocarbon in the structural formula. As such an organic polymer material, polyolefin such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), polyethersulfone (PES), epoxy resin and the like are preferable. It is. Examples of the metal include Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, Sm, and alloys containing at least one of these.

  The thickness of the release layer 11 varies depending on various conditions such as the composition, layer configuration, and formation method of the release layer 11, but is preferably about 1 nm to 20 μm, more preferably about 10 nm to 20 μm, and further preferably about 41 nm to 1 μm. . If the thickness of the release layer 11 is too thin, the uniformity of film formation may be impaired, and unevenness may occur in the release. On the other hand, if the thickness is too thick, good release properties of the release layer 11 are ensured. In addition, it is necessary to increase the amount of irradiation light, and it takes time to remove the release layer 11 in a later step. The formation method of the peeling layer 11 is not specifically limited, It selects suitably according to various conditions, such as a film composition and a film thickness. Various vapor deposition methods such as CVD, vapor deposition, molecular beam vapor deposition, sputtering, ion plating, PVD, various plating methods such as electroplating, immersion plating, electroless plating, Langmuir / Blodgett method, spin coating, spray coating, Examples thereof include coating methods such as roll coating, various printing methods, transfer methods, ink jet methods, powder jet methods, and sol / gel methods.

When the pulse modulation circuit A1 is temporarily bonded to the temporary substrate 50, irradiation light 90 is irradiated from the back side of the first substrate 10 to induce in-layer peeling or interface peeling in the peeling layer 11 (FIG. 1B). Then, since the intermolecular bond of the peeling layer 11 is weakened, the pulse modulation circuit A1 is peeled from the first substrate 10 (FIG. 1C). The irradiation light 90 is not particularly limited as long as it causes in-layer peeling or interfacial peeling of the peeling layer 11. For example, X-rays, ultraviolet rays, visible light, infrared rays (heat rays), laser light, Examples include millimeter waves, microwaves, electron beams, radiation (α rays, β rays, γ rays) and the like, and laser light is preferable in that it easily causes ablation. Examples of the laser beam include a gas laser and a solid-state laser, and an excimer laser, an Nd—YAG laser, an Ar laser, a CO ₂ laser, a He—Ne laser, and the like are particularly preferable. Since the excimer laser outputs high energy at a short wavelength, it is possible to cause delamination in the delamination layer 11 in a very short time. In order to induce ablation in the release layer 11, when there is wavelength dependency, the wavelength of the irradiated laser light is desirably about 100 to 350 nm. Further, in order to induce phase change such as outgassing, vaporization, and sublimation in the peeling layer 11 to cause in-layer peeling or interfacial peeling, the wavelength of the laser beam is preferably about 350 to 1200 nm.

  Next, the amplification element A2 formed on the second substrate (second transfer source substrate) 20 is peeled and transferred to the pulse modulation circuit A1 (FIG. 2A). The amplifying element A2 is composed of various circuit elements such as a thin film transistor Tr2 formed on the base layer 22 (only the thin film transistor Tr2 is shown here). A release layer 21 is formed between the base layer 22 and the second substrate 20. The composition of the release layer 21 is the same as the composition of the release layer 11. The thin film transistor Tr2 includes a silicon layer (including a channel region 24c, a drain region 24d, and a source region 24c) 24 formed on the base layer 22, a gate insulating film 23 covering the silicon layer 24, and a channel region via the gate insulating film 23. The gate electrode 25g formed on 24c, the interlayer insulating film 26, the thin film transistor Tr2, and the wiring 27 for connecting other circuit elements (the thin film transistor constituting the amplification element A2, the pulse modulation circuit A1, etc.) and the like. A plug 29 for connecting the amplifying element A2 and the pixel circuit A3 is formed in the wiring 27. An anisotropic conductive adhesive (an anisotropic conductive paste or anisotropic conductive film) 28 is applied to the adhesive surface of the amplifier circuit A2. When the amplifying element A2 is bonded to the pulse modulation circuit A1, irradiation light 90 is irradiated from the back side of the second substrate 20 to induce in-layer peeling or interface peeling in the peeling layer 21 (FIG. 2B). Then, since the intermolecular bond of the peeling layer 21 is weakened, the amplification element A2 is peeled from the second substrate 20 (FIG. 2C).

  Next, the pixel circuit A3 formed on the third substrate (third transfer source substrate) 30 is peeled and transferred to the amplification element A2 (FIG. 3A). The pixel circuit A3 includes various circuit elements such as the thin film transistor Tr3 formed on the base layer 32 (only the thin film transistor Tr3 is illustrated here). A release layer 31 is formed between the base layer 32 and the third substrate 30. The composition of the release layer 31 is the same as the composition of the release layer 11. The thin film transistor Tr3 includes a silicon layer (including a channel region 34c, a drain region 34d, and a source region 34c) 34 formed on the base layer 32, a gate insulating film 33 covering the silicon layer 34, and a channel region via the gate insulating film 33. The gate electrode 35g, the interlayer insulating film 36, the thin film transistor Tr3, and the wiring 37 that connects other circuit elements (such as the thin film transistor and the amplifying element A2 constituting the pixel circuit A3) formed on 34c. A wiring 35 is formed in the same layer as the gate electrode 35g. A plug 39 for connecting the pixel circuit A3 and the photoelectric conversion element A4 is formed in the wiring 37. An anisotropic conductive adhesive 38 is applied to the adhesion surface of the pixel circuit A3. If the pixel circuit A3 is bonded to the amplifying element A2, irradiation light 90 is irradiated from the back side of the third substrate 30 to induce in-layer peeling or interface peeling in the peeling layer 31 (FIG. 3B). Then, since the intermolecular bond of the peeling layer 31 is weakened, the pixel circuit A3 is peeled from the third substrate 30 (FIG. 3C).

  Next, the photoelectric conversion element A4 formed on the fourth substrate (fourth transfer source substrate) 40 is peeled and transferred to the pixel circuit A3 (FIG. 4A). The photoelectric conversion element A4 is configured by a photodiode including a transparent electrode 43, a photoelectric conversion layer 44, and an electrode 45, and is insulated by an interlayer insulating film 46. The photoelectric conversion element A4 is formed on the base layer 42 through the peeling layer 41, and an anisotropic conductive adhesive 47 is applied to the contact surface with the pixel circuit A3. The pixel circuit A3 and the photoelectric conversion element A4 are bonded, and irradiation light 90 is irradiated from the back side of the fourth substrate 40 to induce in-layer peeling or interface peeling in the peeling layer 41 (FIG. 4B). Then, since the intermolecular bond of the peeling layer 41 is weakened, the photoelectric conversion element A4 is peeled from the fourth substrate 40 (FIG. 4C). Thereby, an artificial retina NVC in which four types of thin film devices (pulse modulation circuit A1, amplification element A2, pixel circuit A3, and photoelectric conversion element A4) are three-dimensionally stacked is obtained.

  Next, the artificial retina NVC temporarily bonded onto the temporary substrate 50 is bonded to the curved flexible material 60 (FIG. 5A). The flexible material 60 is not particularly limited as long as it is a material that has appropriate elasticity and is harmless to the eyeball. For example, a thin plastic film, a resin film, or the like is preferable. An adhesive 61 is applied in advance to the adhesive surface of the flexible material 60. When the artificial retina NVC is bonded onto the flexible material 60 and then the water-soluble adhesive 51 is washed with water (FIG. 5B), the artificial retina NVC is peeled off from the temporary substrate 50 (FIG. 5C). The artificial retina NVC obtained in this way can be used to restore visual acuity by being embedded inside the eyeball (for example, between the neural retina and the retinal pigment epithelium).

  According to the present embodiment, since the artificial retina NVC is manufactured using the above-described peeling transfer method, the artificial retina NVC can be easily manufactured as compared with the conventional technique using a silicon wafer. In particular, the use of the peeling transfer method facilitates mounting on any surface, and therefore, the artificial retina NVC can be easily manufactured even on the curved flexible material 60. Moreover, since the manufacturing process of each thin film device can be separated by using the peeling transfer method, each thin film device can be manufactured under optimum manufacturing conditions.

  In this embodiment, the pulse modulation circuit A1 is arranged in the first layer, the amplification element A2 is arranged in the second layer, the pixel circuit A3 and the photoelectric conversion element A4 are arranged in the third layer, The artificial retina NVC is manufactured by sequentially laminating and transferring onto a flexible material (three-layer structure).

  First, as in the first embodiment, the pulse modulation circuit A1 and the amplification element A2 are sequentially stacked on the temporary substrate 50. The specific lamination process is as shown in FIGS. On the other hand, the pixel circuit A3 and the photoelectric conversion element A4 are formed in the same layer in advance on the fifth substrate (fifth transfer source substrate) 70 (FIG. 6A). The thin film transistor Tr3 constituting the pixel circuit A3 includes a silicon layer (including a channel region 74c, a drain region 74d, and a source region 74c) 74 formed on the base layer 72, a gate insulating film 73 covering the silicon layer 74, and a gate insulating film A gate electrode 75g formed on the channel region 74c through the gate electrode 73, an interlayer insulating film 76, a thin film transistor Tr3, and a wiring 77 for connecting other circuit elements (such as a thin film transistor and an amplifying element A2 constituting the pixel circuit A3). Is done. A wiring 75 is formed in the same layer as the gate electrode 75g. The source electrode of the thin film transistor Tr3 is connected to the photoelectric conversion layer 78 of the photoelectric conversion element A4. An electrode 79 is formed on the photoelectric conversion layer 78. The pixel circuit A3 and the photoelectric conversion element A4 are formed on the base layer 72 via the release layer 71, and an anisotropic conductive adhesive 80 is applied to the contact surface with the amplification element A2. The pixel circuit A3 and the photoelectric conversion element A4 are bonded to the amplifying element A2, and irradiation light 90 is irradiated from the back side of the fifth substrate 70 to induce in-layer peeling or interface peeling in the peeling layer 71 (FIG. 6B). . Then, since the intermolecular bond of the peeling layer 71 is weakened, the pixel circuit A3 and the photoelectric conversion element A4 are peeled from the fifth substrate 70 (FIG. 6C). Thereby, an artificial retina NVC in which four types of thin film devices are three-dimensionally stacked is obtained. Next, the artificial retina NVC temporarily bonded onto the temporary substrate 50 is bonded to the curved flexible material 60 (FIG. 7A), and the water-soluble adhesive 51 is washed with water (FIG. 7B). The artificial retina NVC is peeled off from the temporary substrate 50 (FIG. 7C).

  According to the present embodiment, since the number of peeling and transferring operations can be reduced as compared with the first embodiment, it is possible to suppress a decrease in yield due to transfer defects such as misalignment. In this embodiment, the pixel circuit A3 and the photoelectric conversion element A4 are arranged in the same layer. However, a thin film device composed of two or more arbitrary combinations may be arranged in the same layer.

6 is a cross-sectional view of the manufacturing process of the artificial retina of Example 1. FIG. 6 is a cross-sectional view of the manufacturing process of the artificial retina of Example 1. FIG. 6 is a cross-sectional view of the manufacturing process of the artificial retina of Example 1. FIG. 6 is a cross-sectional view of the manufacturing process of the artificial retina of Example 1. FIG. 6 is a cross-sectional view of the manufacturing process of the artificial retina of Example 1. FIG. FIG. 10 is a cross-sectional view of the manufacturing process for the artificial retina of Example 2. FIG. 10 is a cross-sectional view of the manufacturing process for the artificial retina of Example 2.

Explanation of symbols

NVC ... artificial retina A1 ... pulse modulation circuit A2 ... amplifying element A3 ... pixel circuit A4 ... photoelectric conversion element

Claims (6)

  A method of manufacturing an artificial retina by sequentially laminating and transferring a plurality of thin film devices constituting an artificial retina onto a curved flexible material.   A photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies an electrical signal photoelectrically converted by the photoelectric conversion element, and an electrical signal amplified by the amplification element A method of manufacturing an artificial retina by sequentially laminating and transferring a pulse modulation circuit for supplying a pulse signal to a human optic nerve by performing pulse modulation on a curved flexible material.   A photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies an electrical signal photoelectrically converted by the photoelectric conversion element, and an electrical signal amplified by the amplification element A method of manufacturing an artificial retina comprising a pulse modulation circuit that modulates a pulse and supplies a pulse signal to a human optic nerve on a curved flexible material, the pulse modulation circuit formed on a first substrate comprising: Peeling and transferring onto the temporary substrate; peeling and transferring the amplification element formed on the second substrate onto the pulse modulation circuit peeled and transferred onto the temporary substrate; and stacking on the third substrate. A step of peeling and transferring the pixel circuit formed on the temporary substrate on the temporary substrate and stacking the photoelectric conversion device formed on the fourth substrate on the temporary substrate. Before The method comprising the steps of forming an artificial retina detached transferred onto the pixel circuits, and a step of peeling transfer the artificial retina formed on the temporary substrate on a curved flexible material.   A photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies an electrical signal photoelectrically converted by the photoelectric conversion element, and an electrical signal amplified by the amplification element A method of manufacturing an artificial retina comprising a pulse modulation circuit that modulates a pulse and supplies a pulse signal to a human optic nerve on a curved flexible material, the pulse modulation circuit formed on a first substrate comprising: Peeling and transferring onto the temporary substrate; peeling and transferring the amplification element formed on the second substrate onto the pulse modulation circuit peeled and transferred onto the temporary substrate; and stacking on the third substrate. Forming the artificial retina by peeling and transferring the pixel circuit and the photoelectric conversion element formed on the temporary substrate onto the amplification element; and forming the artificial retina formed on the temporary substrate into a curved surface How and a step of peeling transferred onto the flexible material.   An artificial retina in which a plurality of thin film devices constituting an artificial retina are laminated by peeling and transferring onto a curved flexible material. A photoelectric conversion element that converts incident light into an electrical signal, a pixel circuit that drives the photoelectric conversion element, an amplification element that amplifies an electrical signal photoelectrically converted by the photoelectric conversion element, and an electrical signal amplified by the amplification element An artificial retina in which a pulse modulation circuit that modulates a pulse and supplies a pulse signal to the optic nerve of a human body is laminated by peeling and transferring onto a curved flexible material.

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