JP2006045021A5 - - Google Patents
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- Publication number
- JP2006045021A5 JP2006045021A5 JP2004230529A JP2004230529A JP2006045021A5 JP 2006045021 A5 JP2006045021 A5 JP 2006045021A5 JP 2004230529 A JP2004230529 A JP 2004230529A JP 2004230529 A JP2004230529 A JP 2004230529A JP 2006045021 A5 JP2006045021 A5 JP 2006045021A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal substrate
- substrate
- predetermined
- laalo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 29
- 239000013078 crystal Substances 0.000 claims 27
- 150000001875 compounds Chemical class 0.000 claims 4
- 239000002055 nanoplate Substances 0.000 claims 4
- 229910002367 SrTiO Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000004907 flux Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- 229910019606 La0.5Sr0.5CoO3 Inorganic materials 0.000 claims 1
- 241000877463 Lanio Species 0.000 claims 1
- 229910052777 Praseodymium Inorganic materials 0.000 claims 1
- 229910004121 SrRuO Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004230529A JP4742533B2 (ja) | 2004-08-06 | 2004-08-06 | Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 |
| US11/659,428 US7911927B2 (en) | 2004-08-06 | 2005-08-01 | Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them |
| PCT/JP2005/014047 WO2006013826A1 (ja) | 2004-08-06 | 2005-08-01 | Ｂｉ層状化合物ナノプレート及びその配列体並びにそれらの製造方法とそれを用いた装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004230529A JP4742533B2 (ja) | 2004-08-06 | 2004-08-06 | Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006045021A JP2006045021A (ja) | 2006-02-16 |
| JP2006045021A5 true JP2006045021A5 (enExample) | 2007-07-19 |
| JP4742533B2 JP4742533B2 (ja) | 2011-08-10 |
Family
ID=35787111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004230529A Expired - Fee Related JP4742533B2 (ja) | 2004-08-06 | 2004-08-06 | Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7911927B2 (enExample) |
| JP (1) | JP4742533B2 (enExample) |
| WO (1) | WO2006013826A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100393625C (zh) * | 2006-03-06 | 2008-06-11 | 湖北大学 | 一种钕掺杂钛酸铋纳米线阵列铁电存储材料及其合成方法 |
| CN102216203B (zh) * | 2008-09-22 | 2014-08-13 | 韩国科学技术院 | 单晶金属纳米盘的制备方法 |
| US9627490B1 (en) * | 2015-12-18 | 2017-04-18 | Wisconsin Alumni Research Foundation | Epitaxial growth of high quality vanadium dioxide films with template engineering |
| CN106087059A (zh) * | 2016-06-30 | 2016-11-09 | 武汉工程大学 | 一种铋层状结构K0.5Bi4.5Ti4O15晶体的制备工艺 |
| US10216013B2 (en) * | 2017-03-07 | 2019-02-26 | Wisconsin Alumni Research Foundation | Vanadium dioxide-based optical and radiofrequency switches |
| KR102363288B1 (ko) | 2017-03-10 | 2022-02-14 | 삼성전자주식회사 | 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자 |
| KR102392041B1 (ko) | 2017-03-10 | 2022-04-27 | 삼성전자주식회사 | 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자 |
| KR102325821B1 (ko) | 2017-03-31 | 2021-11-11 | 삼성전자주식회사 | 2차원 페로브스카이트 소재, 이를 포함하는 유전체 및 적층형 커패시터 |
| US11335781B2 (en) | 2017-05-10 | 2022-05-17 | Wisconsin Alumni Research Foundation | Vanadium dioxide heterostructures having an isostructural metal-insulator transition |
| CN108706632B (zh) * | 2018-06-25 | 2020-01-14 | 浙江大学 | 一种钛酸铋纳米片的制备方法 |
| CN109734441A (zh) * | 2018-12-17 | 2019-05-10 | 中国科学院上海硅酸盐研究所 | 一种窄禁带铋层状共生结构铁电材料及其制备方法 |
| CN110592539A (zh) * | 2019-09-17 | 2019-12-20 | 常州大学 | 一种镍酸镧定位替代的钛酸铋合金薄膜及其制备方法 |
| JP2023541226A (ja) * | 2020-08-17 | 2023-09-29 | ナショナル ユニバーシティ オブ シンガポール | 高度に配向した単結晶低次元ナノ構造体、製造方法及び装置 |
| JPWO2023058703A1 (enExample) * | 2021-10-08 | 2023-04-13 | ||
| CN115354397B (zh) * | 2022-07-11 | 2023-08-25 | 西北工业大学 | 一种大面积二维单晶及制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3594061B2 (ja) * | 1996-07-24 | 2004-11-24 | ソニー株式会社 | 層状結晶構造酸化物およびその製造方法 |
| JP3888400B2 (ja) * | 1997-05-26 | 2007-02-28 | ソニー株式会社 | 誘電体薄膜の製造方法 |
| US6123819A (en) * | 1997-11-12 | 2000-09-26 | Protiveris, Inc. | Nanoelectrode arrays |
| JP3735686B2 (ja) * | 2001-10-30 | 2006-01-18 | 独立行政法人理化学研究所 | 金属酸化物強誘電体粒子結晶の製造方法 |
| JP3983091B2 (ja) * | 2002-04-24 | 2007-09-26 | Ｎｅｃエレクトロニクス株式会社 | 酸化物誘電体膜の気相成長方法 |
| US7147834B2 (en) * | 2003-08-11 | 2006-12-12 | The Research Foundation Of State University Of New York | Hydrothermal synthesis of perovskite nanotubes |
| JP2005272129A (ja) | 2004-03-26 | 2005-10-06 | Konica Minolta Medical & Graphic Inc | シート状材料排出機構及び画像記録装置 |
-
2004
- 2004-08-06 JP JP2004230529A patent/JP4742533B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-01 WO PCT/JP2005/014047 patent/WO2006013826A1/ja not_active Ceased
- 2005-08-01 US US11/659,428 patent/US7911927B2/en not_active Expired - Fee Related
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