JP4742533B2 - Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 - Google Patents

Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 Download PDF

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JP4742533B2
JP4742533B2 JP2004230529A JP2004230529A JP4742533B2 JP 4742533 B2 JP4742533 B2 JP 4742533B2 JP 2004230529 A JP2004230529 A JP 2004230529A JP 2004230529 A JP2004230529 A JP 2004230529A JP 4742533 B2 JP4742533 B2 JP 4742533B2
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single crystal
crystal substrate
nanoplate
array
layered compound
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JP2006045021A5 (enExample
JP2006045021A (ja
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秀臣 鯉沼
祐司 松本
竜太 高橋
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Priority to JP2004230529A priority Critical patent/JP4742533B2/ja
Priority to PCT/JP2005/014047 priority patent/WO2006013826A1/ja
Priority to US11/659,428 priority patent/US7911927B2/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/002—Mixed oxides other than spinels, e.g. perovskite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/18—Arsenic, antimony or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/024—Multiple impregnation or coating
    • B01J37/0244—Coatings comprising several layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2523/00—Constitutive chemical elements of heterogeneous catalysts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39—Photocatalytic properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
JP2004230529A 2004-08-06 2004-08-06 Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 Expired - Fee Related JP4742533B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004230529A JP4742533B2 (ja) 2004-08-06 2004-08-06 Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置
PCT/JP2005/014047 WO2006013826A1 (ja) 2004-08-06 2005-08-01 Ｂｉ層状化合物ナノプレート及びその配列体並びにそれらの製造方法とそれを用いた装置
US11/659,428 US7911927B2 (en) 2004-08-06 2005-08-01 Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004230529A JP4742533B2 (ja) 2004-08-06 2004-08-06 Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置

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JP2006045021A JP2006045021A (ja) 2006-02-16
JP2006045021A5 JP2006045021A5 (enExample) 2007-07-19
JP4742533B2 true JP4742533B2 (ja) 2011-08-10

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WO (1) WO2006013826A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100393625C (zh) * 2006-03-06 2008-06-11 湖北大学 一种钕掺杂钛酸铋纳米线阵列铁电存储材料及其合成方法
CN102216203B (zh) * 2008-09-22 2014-08-13 韩国科学技术院 单晶金属纳米盘的制备方法
US9627490B1 (en) * 2015-12-18 2017-04-18 Wisconsin Alumni Research Foundation Epitaxial growth of high quality vanadium dioxide films with template engineering
CN106087059A (zh) * 2016-06-30 2016-11-09 武汉工程大学 一种铋层状结构K0.5Bi4.5Ti4O15晶体的制备工艺
US10216013B2 (en) * 2017-03-07 2019-02-26 Wisconsin Alumni Research Foundation Vanadium dioxide-based optical and radiofrequency switches
KR102363288B1 (ko) 2017-03-10 2022-02-14 삼성전자주식회사 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자
KR102392041B1 (ko) 2017-03-10 2022-04-27 삼성전자주식회사 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자
KR102325821B1 (ko) 2017-03-31 2021-11-11 삼성전자주식회사 2차원 페로브스카이트 소재, 이를 포함하는 유전체 및 적층형 커패시터
US11335781B2 (en) 2017-05-10 2022-05-17 Wisconsin Alumni Research Foundation Vanadium dioxide heterostructures having an isostructural metal-insulator transition
CN108706632B (zh) * 2018-06-25 2020-01-14 浙江大学 一种钛酸铋纳米片的制备方法
CN109734441A (zh) * 2018-12-17 2019-05-10 中国科学院上海硅酸盐研究所 一种窄禁带铋层状共生结构铁电材料及其制备方法
CN110592539A (zh) * 2019-09-17 2019-12-20 常州大学 一种镍酸镧定位替代的钛酸铋合金薄膜及其制备方法
CN115968414A (zh) * 2020-08-17 2023-04-14 新加坡国立大学 高度定向的单晶低维纳米结构、制造方法及器件
JPWO2023058703A1 (enExample) * 2021-10-08 2023-04-13
CN115354397B (zh) * 2022-07-11 2023-08-25 西北工业大学 一种大面积二维单晶及制备方法

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JP3594061B2 (ja) * 1996-07-24 2004-11-24 ソニー株式会社 層状結晶構造酸化物およびその製造方法
JP3888400B2 (ja) * 1997-05-26 2007-02-28 ソニー株式会社 誘電体薄膜の製造方法
US6123819A (en) * 1997-11-12 2000-09-26 Protiveris, Inc. Nanoelectrode arrays
JP3735686B2 (ja) * 2001-10-30 2006-01-18 独立行政法人理化学研究所 金属酸化物強誘電体粒子結晶の製造方法
JP3983091B2 (ja) * 2002-04-24 2007-09-26 Ｎｅｃエレクトロニクス株式会社 酸化物誘電体膜の気相成長方法
US7147834B2 (en) * 2003-08-11 2006-12-12 The Research Foundation Of State University Of New York Hydrothermal synthesis of perovskite nanotubes
JP2005272129A (ja) 2004-03-26 2005-10-06 Konica Minolta Medical & Graphic Inc シート状材料排出機構及び画像記録装置

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US7911927B2 (en) 2011-03-22
WO2006013826A1 (ja) 2006-02-09
JP2006045021A (ja) 2006-02-16
US20090213636A1 (en) 2009-08-27

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