JP2006041502A5 - - Google Patents

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Publication number
JP2006041502A5
JP2006041502A5 JP2005185380A JP2005185380A JP2006041502A5 JP 2006041502 A5 JP2006041502 A5 JP 2006041502A5 JP 2005185380 A JP2005185380 A JP 2005185380A JP 2005185380 A JP2005185380 A JP 2005185380A JP 2006041502 A5 JP2006041502 A5 JP 2006041502A5
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JP
Japan
Prior art keywords
region
release layer
forming
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005185380A
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English (en)
Japanese (ja)
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JP2006041502A (ja
JP4912627B2 (ja
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Application filed filed Critical
Priority to JP2005185380A priority Critical patent/JP4912627B2/ja
Priority claimed from JP2005185380A external-priority patent/JP4912627B2/ja
Publication of JP2006041502A publication Critical patent/JP2006041502A/ja
Publication of JP2006041502A5 publication Critical patent/JP2006041502A5/ja
Application granted granted Critical
Publication of JP4912627B2 publication Critical patent/JP4912627B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005185380A 2004-06-24 2005-06-24 薄膜集積回路の作製方法 Expired - Fee Related JP4912627B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005185380A JP4912627B2 (ja) 2004-06-24 2005-06-24 薄膜集積回路の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004186543 2004-06-24
JP2004186543 2004-06-24
JP2005185380A JP4912627B2 (ja) 2004-06-24 2005-06-24 薄膜集積回路の作製方法

Publications (3)

Publication Number Publication Date
JP2006041502A JP2006041502A (ja) 2006-02-09
JP2006041502A5 true JP2006041502A5 (cg-RX-API-DMAC7.html) 2008-05-15
JP4912627B2 JP4912627B2 (ja) 2012-04-11

Family

ID=35906104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005185380A Expired - Fee Related JP4912627B2 (ja) 2004-06-24 2005-06-24 薄膜集積回路の作製方法

Country Status (1)

Country Link
JP (1) JP4912627B2 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5204959B2 (ja) * 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5264016B2 (ja) * 2006-06-30 2013-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI438827B (zh) * 2006-09-20 2014-05-21 美國伊利諾大學理事會 用於製造可印刷半導體結構、裝置及裝置元件的脫離對策
WO2019126769A1 (en) 2017-12-22 2019-06-27 Board Of Regents, The University Of Texas System Nanoscale-aligned three-dimensional stacked integrated circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
EP2565924B1 (en) * 2001-07-24 2018-01-10 Samsung Electronics Co., Ltd. Transfer method

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