JP2006032635A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2006032635A
JP2006032635A JP2004209001A JP2004209001A JP2006032635A JP 2006032635 A JP2006032635 A JP 2006032635A JP 2004209001 A JP2004209001 A JP 2004209001A JP 2004209001 A JP2004209001 A JP 2004209001A JP 2006032635 A JP2006032635 A JP 2006032635A
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die pad
semiconductor element
bonding wire
semiconductor device
mold resin
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JP4305310B2 (en
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Norimasa Handa
宣正 半田
Takeshi Ishikawa
岳史 石川
Norihisa Imaizumi
典久 今泉
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Denso Corp
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Denso Corp
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where a semiconductor element is mounted to a die pad, and a bonding wire is connected to the die pad, and they are sealed with mold resin for suppressing the progress of peeling to a wire connecting part on the die pad even when the peeling of the mold resin on the die pad is generated, and for lengthening the life of the wire. <P>SOLUTION: This semiconductor device 100 is provided with a semiconductor element 20 and a die pad 11 to which the semiconductor element 20 is mounted. A bonding wire 40 is connected to the die pad 11, and the semiconductor 20, the die pad 11; and the bonding wire 40 are sealed with mold resin 50. The die pad 11 is provided with a U-shaped projector 11c extended from a root 11a to a direction away from the semiconductor element 20, and U-turned in the middle, whose tip 11b is extended to a direction toward the semiconductor element 20, and the bonding wire 40 is connected to the tip 11a of the projecting part 11c. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ダイパッド上に半導体素子を搭載し、このダイパッドにボンディングワイヤを接続し、これらをモールド樹脂で封止してなる半導体装置に関する。   The present invention relates to a semiconductor device in which a semiconductor element is mounted on a die pad, a bonding wire is connected to the die pad, and these are sealed with a mold resin.

この種の半導体装置は、一般に、半導体素子と、半導体素子が搭載されるダイパッドとを備え、ダイパッドには半導体素子などからボンディングワイヤが接続されており、半導体素子、ダイパッドおよびボンディングワイヤがモールド樹脂によって包み込まれるように封止されてなる。   In general, this type of semiconductor device includes a semiconductor element and a die pad on which the semiconductor element is mounted. A bonding wire is connected to the die pad from the semiconductor element or the like. The semiconductor element, the die pad, and the bonding wire are made of mold resin. It is sealed so as to be wrapped.

ここで、半導体素子などからダイパッドに対してワイヤボンディングを行うのは、たとえば、ＩＣチップなどの半導体素子を、ノイズを除去するためにＧＮＤ状態とするためである。   Here, the reason why wire bonding is performed from the semiconductor element or the like to the die pad is, for example, to bring the semiconductor element such as an IC chip into a GND state in order to remove noise.

このような半導体装置においては、通常、Ａｇメッキなどを施したダイパット上にワイヤボンディングを行うようにしているが、この場合、半導体素子周辺のせん断応力が大きく、さらにＡｇメッキとモールド樹脂との密着力は弱いので、ほとんどの場合においてダイパット上にモールド樹脂の剥離が生じる。   In such a semiconductor device, wire bonding is usually performed on a die pad subjected to Ag plating. In this case, the shear stress around the semiconductor element is large, and the adhesion between the Ag plating and the mold resin is increased. Since the force is weak, in most cases, the mold resin peels off on the die pad.

ましてや、モノリシックＩＣのようなリフローを要するパッケージ形態を有する半導体装置においては、リフロー時に大きな熱応力が加わるため、上記したダイパッド上におけるモールド樹脂の剥離は顕著となる。   In addition, in a semiconductor device having a package form that requires reflow, such as a monolithic IC, a large thermal stress is applied during reflow, so that the above-described peeling of the mold resin on the die pad becomes significant.

このダイパッド上におけるモールド樹脂の剥離の問題に対して、従来では、一般に、ダイパット上にスリットを入れてスリットを介した上でワイヤボンドを打つ技術が知られている。   With respect to the problem of peeling of the mold resin on the die pad, conventionally, a technique is generally known in which a slit is formed on a die pad and wire bonding is performed through the slit.

この場合、ダイパット上にモールド樹脂の剥離が生じたとしても、ダイパッドにおいてこの樹脂の剥離部とボンディングワイヤの接続部との間にスリットが介在しているため、このスリットの存在によってモールド樹脂の剥離の進行を抑えることができるとされている。   In this case, even if the mold resin is peeled off from the die pad, a slit is interposed between the resin peeling portion and the bonding wire connecting portion in the die pad. It is said that the progress of can be suppressed.

また、従来では、別の技術として特許文献１に記載されているように、ダイパットの端部をＬ字状に延ばし、その先端部にワイヤボンドを行う技術が提案されている。この場合にも、このＬ字状の部分によって、モールド樹脂の剥離の進行を抑えることができるとされている。
特開２００３−１９７８４３号公報 Conventionally, as described in Patent Document 1 as another technique, a technique has been proposed in which an end portion of a die pad is extended in an L shape and wire bonding is performed on the tip portion. Also in this case, it is said that the progress of peeling of the mold resin can be suppressed by this L-shaped portion.
JP 2003-197843 A

図６は、上記したダイパット上にスリットを入れる構成を示す概略平面図である。ダイパッド１１の上にＩＣチップなどの半導体素子２０が搭載され、この半導体素子２０からダイパッド１１にボンディングワイヤ４０が接続されている。   FIG. 6 is a schematic plan view showing a configuration in which a slit is formed on the above-described die pad. A semiconductor element 20 such as an IC chip is mounted on the die pad 11, and a bonding wire 40 is connected from the semiconductor element 20 to the die pad 11.

ここで、ダイパッド１１においては、半導体素子２０の搭載部とボンディングワイヤ４０の接続部との間にスリット９０が設けられている。この場合、スリット９０よりモールド樹脂の剥離の進行を抑えることができる。   Here, in the die pad 11, a slit 90 is provided between the mounting portion of the semiconductor element 20 and the connection portion of the bonding wire 40. In this case, the progress of the peeling of the mold resin from the slit 90 can be suppressed.

しかし、ダイパット１１は完全に切り離されているわけではないので、図６中の矢印Ｙ１に示されるように、回り込んできた剥離の進行を抑えることができず、ワイヤボンド部に剥離が到達してしまう。   However, since the die pad 11 is not completely cut off, as shown by the arrow Y1 in FIG. 6, the progress of the peeling that has turned around cannot be suppressed, and the peeling reaches the wire bond portion. End up.

また、図７は、上記したダイパットの端部をＬ字状に延ばした構成を示す概略平面図である。ダイパット１１の端部をＬ字状に延ばし、その突出部９１の先端にボンディングワイヤ４０が接続されている。   FIG. 7 is a schematic plan view showing a configuration in which the end portion of the above-described die pad is extended in an L shape. The end of the die pad 11 is extended in an L shape, and the bonding wire 40 is connected to the tip of the protruding portion 91.

この場合、図７中の矢印Ｙ２に示されるように、半導体素子２０周辺のせん断応力は半導体素子２０を中心として外へ広がる。   In this case, as indicated by an arrow Y2 in FIG. 7, the shear stress around the semiconductor element 20 spreads outward around the semiconductor element 20.

そのため、Ｌ字状突出部９１の根元部にて、いったんモールド樹脂が剥離しても、当該矢印Ｙ２方向への剥離の進行を抑制することはできるが、やはり、上記スリット構造と同様に、矢印Ｙ３のようにして回り込んでくる剥離に対しては、その進行を回避することができない。   Therefore, even if the mold resin is once peeled off at the base portion of the L-shaped projecting portion 91, the progress of peeling in the direction of the arrow Y2 can be suppressed. It is impossible to avoid the progress of peeling that comes around like Y3.

本発明は上記問題に鑑みてなされたものであり、ダイパッド上に半導体素子を搭載し、このダイパッドにボンディングワイヤを接続し、これらをモールド樹脂で封止してなる半導体装置において、ダイパット上のモールド樹脂の剥離が発生したとしても、ダイパッド上のワイヤ接続部までの剥離の進行を抑え、ワイヤの寿命を長くできるようにすることを目的とする。   The present invention has been made in view of the above problems. In a semiconductor device in which a semiconductor element is mounted on a die pad, a bonding wire is connected to the die pad, and these are sealed with a mold resin, a mold on the die pad is provided. It is an object of the present invention to suppress the progress of peeling to the wire connection portion on the die pad even if the resin is peeled off and to extend the life of the wire.

上記目的を達成するため、請求項１に記載の発明では、半導体素子（２０）と、半導体素子（２０）が搭載されるダイパッド（１１）と、を備え、ダイパッド（１１）にはボンディングワイヤ（４０）が接続されており、半導体素子（２０）、ダイパッド（１１）およびボンディングワイヤ（４０）がモールド樹脂（５０）によって包み込まれるように封止されてなる半導体装置において、ダイパッド（１１）には、根元部（１１ａ）から半導体素子（２０）とは離れる方向へ延び途中でＵターンして先端部（１１ｂ）が半導体素子（２０）へ向かう方向へ延びるＵ字形状を有する突出部（１１ｃ）が延設されており、突出部（１１ｃ）の先端部（１１ａ）に、ボンディングワイヤ（４０）が接続されていることを特徴としている。   In order to achieve the above object, according to the first aspect of the present invention, a semiconductor element (20) and a die pad (11) on which the semiconductor element (20) is mounted are provided, and the die pad (11) has a bonding wire ( 40), and the semiconductor device (20), the die pad (11), and the bonding wire (40) are sealed so as to be wrapped by the mold resin (50). A protruding portion (11c) having a U-shape extending from the root portion (11a) in the direction away from the semiconductor element (20) and making a U-turn in the middle and the tip portion (11b) extending in the direction toward the semiconductor element (20) Is extended and the bonding wire (40) is connected to the front-end | tip part (11a) of the protrusion part (11c), It is characterized by the above-mentioned.

モールド樹脂（５０）の剥離は、半導体素子（２０）とは離れる方向へ進行し、半導体素子（２０）と平行な方向へは進行するものの、半導体素子（２０）へ向かう方向へは進行しない。   The peeling of the mold resin (50) proceeds in a direction away from the semiconductor element (20) and proceeds in a direction parallel to the semiconductor element (20), but does not proceed in a direction toward the semiconductor element (20).

そのため、本発明のように、ダイパッド（１１）において、根元部（１１ａ）から半導体素子（２０）とは離れる方向へ延び途中でＵターンして先端部（１１ｂ）が半導体素子（２０）へ向かう方向へ延びるＵ字形状を有する突出部（１１ｃ）を設け、この突出部（１１ｃ）の先端部（１１ｂ）にボンディングワイヤ（４０）を接続すれば、ボンディングワイヤ（４０）の接続部へは剥離が進行しない。   Therefore, as in the present invention, in the die pad (11), the tip portion (11b) heads toward the semiconductor element (20) by making a U-turn while extending in a direction away from the semiconductor element (20) from the root portion (11a). If a protruding portion (11c) having a U-shape extending in the direction is provided and the bonding wire (40) is connected to the tip end portion (11b) of the protruding portion (11c), it is peeled off to the connecting portion of the bonding wire (40) Does not progress.

したがって、本発明によれば、ダイパッド（１１）上に半導体素子（２０）を搭載し、このダイパッド（１１）にボンディングワイヤ（４０）を接続し、これらをモールド樹脂（５０）で封止してなる半導体装置において、ダイパット（１１）上のモールド樹脂（５０）の剥離が発生したとしても、ダイパッド（１１）上のワイヤ接続部までの剥離の進行を抑え、ワイヤの寿命を長くすることができる。   Therefore, according to the present invention, the semiconductor element (20) is mounted on the die pad (11), the bonding wire (40) is connected to the die pad (11), and these are sealed with the mold resin (50). In the resulting semiconductor device, even if the mold resin (50) on the die pad (11) is peeled off, the progress of the peeling to the wire connecting portion on the die pad (11) can be suppressed, and the life of the wire can be extended. .

また、請求項２に記載の発明では、請求項１に記載の半導体装置において、突出部（１１ｃ）のうち半導体素子（２０）へ向かう方向へ延びる部位に、溝（１１ｅ）もしくはスリット（１１ｆ）が設けられていることを特徴としている。   According to a second aspect of the present invention, in the semiconductor device according to the first aspect, a groove (11e) or a slit (11f) is formed in a portion extending in a direction toward the semiconductor element (20) in the protrusion (11c). It is characterized by being provided.

それによれば、突出部（１１ｃ）の先端部（１１ｂ）すなわちダイパッド（１１）上のワイヤ接続部までのモールド樹脂（５０）剥離の進行を、溝（１１ｅ）もしくはスリット（１１ｆ）によってより確実に抑制することができ、好ましい。   According to this, the progress of the peeling of the mold resin (50) to the tip end portion (11b) of the protruding portion (11c), that is, the wire connecting portion on the die pad (11), is more reliably performed by the groove (11e) or the slit (11f). This is preferable because it can be suppressed.

また、請求項３に記載の発明のように、請求項１または請求項２に記載の半導体装置においては、ボンディングワイヤ（４０）は、ダイパッド（１１）と半導体素子（２０）とを接続するものにできる。   Further, as in the invention described in claim 3, in the semiconductor device described in claim 1 or 2, the bonding wire (40) connects the die pad (11) and the semiconductor element (20). Can be.

なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each said means is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各図相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, parts that are the same or equivalent to each other are given the same reference numerals in the drawings for the sake of simplicity.

図１は、本発明の実施形態に係る半導体装置１００の構成を示す概略平面図である。なお、図１中、モールド樹脂５０の外形は一点鎖線にて示してある。   FIG. 1 is a schematic plan view showing the configuration of a semiconductor device 100 according to an embodiment of the present invention. In FIG. 1, the outer shape of the mold resin 50 is indicated by a one-dot chain line.

図１に示されるように、半導体装置１００においては、リードフレーム１０のダイパッド１１上には、Ａｇペーストなどからなる導電性接着剤やはんだなどを介してＩＣチップなどからなる半導体素子２０が搭載され接合されている。   As shown in FIG. 1, in a semiconductor device 100, a semiconductor element 20 made of an IC chip or the like is mounted on a die pad 11 of a lead frame 10 via a conductive adhesive made of Ag paste or the like, or solder. It is joined.

また、リードフレーム１０のリード部１２には、受動部品３０が導電性接着剤やはんだなどを介して搭載され接合されている。   A passive component 30 is mounted and joined to the lead portion 12 of the lead frame 10 via a conductive adhesive, solder, or the like.

ここで、受動部品３０としては、たとえば、コンデンサや抵抗体などを採用することができる。本例では、受動部品３０としてはチップコンデンサを採用している。このようなコンデンサは、半導体装置における電気的なノイズを除去することなどのために設けられている。   Here, as the passive component 30, for example, a capacitor, a resistor, or the like can be employed. In this example, a chip capacitor is employed as the passive component 30. Such a capacitor is provided to remove electrical noise in the semiconductor device.

また、本実施形態の半導体装置１００では、図１に示されるように、ダイパッド１１には、根元部１１ａから半導体素子２０とは離れる方向へ延び途中でＵターンして先端部１１ｂが半導体素子２０へ向かう方向へ延びるＵ字形状を有する突出部１１ｃが延設されている。   Further, in the semiconductor device 100 of the present embodiment, as shown in FIG. 1, the die pad 11 extends in a direction away from the semiconductor element 20 from the root portion 11 a and makes a U-turn in the middle, and the tip end portion 11 b has the semiconductor element 20. A projecting portion 11c having a U-shape extending in the direction toward is extended.

そして、このダイパッド１１における突出部１１ｃの先端部１１ａに、ボンディングワイヤ４０が接続されている。また、ボンディングワイヤ４０は、半導体素子２０とリード部１２との間も接続している。   And the bonding wire 40 is connected to the front-end | tip part 11a of the protrusion part 11c in this die pad 11. FIG. The bonding wire 40 is also connected between the semiconductor element 20 and the lead portion 12.

このボンディングワイヤ４０は、Ａｕ（金）やＡｌ（アルミニウム）やＣｕ（銅）などからなるものであり、半導体装置の分野における通常のワイヤボンディング手法により形成することができる。   The bonding wire 40 is made of Au (gold), Al (aluminum), Cu (copper), or the like, and can be formed by a normal wire bonding technique in the field of semiconductor devices.

ここで、ダイパッド１１およびリード部１２を構成するリードフレーム１０は、Ｃｕや４２アロイなどの通常のリードフレーム材料を採用し、エッチングやプレスなどにより形成できるものである。   Here, the lead frame 10 constituting the die pad 11 and the lead portion 12 employs a normal lead frame material such as Cu or 42 alloy, and can be formed by etching or pressing.

そして、リードフレーム１０には、ボンディングワイヤ４０の種類や上記導電性接着剤の種類などに応じて、その表面に適宜メッキ（たとえばＡｇメッキ）などの処理が施されている。   The lead frame 10 is appropriately subjected to a treatment such as plating (eg, Ag plating) on the surface thereof according to the type of the bonding wire 40 or the type of the conductive adhesive.

たとえば、半導体素子２０や受動部品３０が導電性接着剤により接合されており、ボンディングワイヤ４０がＡｕからなる場合においては、リードフレーム１０のうちこれら導電性接着剤やボンディングワイヤ４０との接続部に対しては、Ａｇメッキを施すことになる。   For example, when the semiconductor element 20 and the passive component 30 are bonded by a conductive adhesive and the bonding wire 40 is made of Au, the lead frame 10 is connected to the conductive adhesive or the bonding wire 40. On the other hand, Ag plating is applied.

そして、これらリードフレーム１０、半導体素子２０、受動部品３０、およびボンディングワイヤ４０、すなわち装置１００の全体がリード部１２の一部（つまりアウターリード）が露出するように、モールド樹脂５０により封止されている。   The lead frame 10, the semiconductor element 20, the passive component 30, and the bonding wire 40, that is, the entire device 100 are sealed with the mold resin 50 so that a part of the lead portion 12 (that is, the outer lead) is exposed. ing.

このモールド樹脂５０としては、通常の電子分野で採用されるエポキシ樹脂などのモールド材料を採用することができ、金型を用いたトランスファーモールド法により形成されるものである。   As the mold resin 50, a mold material such as an epoxy resin used in a normal electronic field can be used, and the mold resin 50 is formed by a transfer mold method using a mold.

この半導体装置１００の製造方法は、たとえば、次の通りである。Ａｇペーストなどの上記導電性接着剤をダイパッド１１上に塗布し、半導体素子２０をマウントして導電性接着剤を硬化させる、
続いて、ワイヤボンディングを行って各ボンディングワイヤ４０を形成する。これは、受動部品３０を搭載してから、ワイヤボンディングを行うと、ワイヤボンディングのツールが、ボンディングワイヤ４０の近傍に位置する受動部品３０に当たるので、ワイヤボンディングがうまくできないためである。 A method for manufacturing the semiconductor device 100 is, for example, as follows. The conductive adhesive such as Ag paste is applied on the die pad 11, the semiconductor element 20 is mounted, and the conductive adhesive is cured.
Subsequently, wire bonding is performed to form each bonding wire 40. This is because when wire bonding is performed after the passive component 30 is mounted, the wire bonding tool hits the passive component 30 located in the vicinity of the bonding wire 40, so that the wire bonding cannot be performed well.

次に、リード部１２の所定領域に上記導電性接着剤を塗布し、受動部品３０をマウントして上記導電性接着剤を硬化させる。その後、トランスファーモールド成形などにより、モールド樹脂５０による封止を行う。こうして、図１に示されるような半導体装置１００ができあがる。   Next, the conductive adhesive is applied to a predetermined region of the lead portion 12, the passive component 30 is mounted, and the conductive adhesive is cured. Thereafter, sealing with mold resin 50 is performed by transfer molding or the like. Thus, the semiconductor device 100 as shown in FIG. 1 is completed.

ところで、本実施形態によれば、半導体素子２０と、半導体素子２０が搭載されるダイパッド１１と、を備え、ダイパッド１１にはボンディングワイヤ４０が接続されており、半導体素子２０、ダイパッド１１およびボンディングワイヤ４０がモールド樹脂５０によって包み込まれるように封止されてなる半導体装置において、ダイパッド１１には、根元部１１ａから半導体素子２０とは離れる方向へ延び途中でＵターンして先端部１１ｂが半導体素子２０へ向かう方向へ延びるＵ字形状を有する突出部１１ｃが延設されており、突出部１１ｃの先端部１１ａに、ボンディングワイヤ４０が接続されていることを特徴とする半導体装置１００が提供される。   By the way, according to the present embodiment, the semiconductor device 20 and the die pad 11 on which the semiconductor device 20 is mounted are provided, and the bonding wire 40 is connected to the die pad 11, and the semiconductor device 20, the die pad 11 and the bonding wire are connected. In a semiconductor device in which 40 is encapsulated by a mold resin 50, the die pad 11 extends from the root portion 11 a in a direction away from the semiconductor element 20 and U-turns in the middle, and the tip end portion 11 b has the semiconductor element 20. A semiconductor device 100 is provided in which a protruding portion 11c having a U-shape extending in a direction toward the extending portion is extended, and a bonding wire 40 is connected to the tip end portion 11a of the protruding portion 11c.

上述したように、モールド樹脂５０の剥離は、半導体素子２０とは離れる方向へ進行し、半導体素子２０と平行な方向へは進行するものの、半導体素子２０へ向かう方向へは進行しない。   As described above, the peeling of the mold resin 50 proceeds in a direction away from the semiconductor element 20 and proceeds in a direction parallel to the semiconductor element 20, but does not proceed in a direction toward the semiconductor element 20.

そのため、本実施形態のように、ダイパッド１１において、根元部１１ａから半導体素子２０とは離れる方向へ延び途中でＵターンして先端部１１ｂが半導体素子２０へ向かう方向へ延びるＵ字形状を有する突出部１１ｃを設け、この突出部１１ｃの先端部１１ｂにボンディングワイヤ４０を接続すれば、ボンディングワイヤ４０の接続部へは剥離が進行しない。   Therefore, as in the present embodiment, in the die pad 11, a protrusion having a U shape that extends in the direction away from the semiconductor element 20 from the root portion 11 a and U-turns in the middle and the tip end portion 11 b extends in the direction toward the semiconductor element 20. If the portion 11c is provided and the bonding wire 40 is connected to the tip portion 11b of the protruding portion 11c, the peeling does not proceed to the connecting portion of the bonding wire 40.

したがって、本実施形態によれば、ダイパッド１１上に半導体素子２０を搭載し、このダイパッド１１にボンディングワイヤ４０を接続し、これらをモールド樹脂５０で封止してなる半導体装置１００において、ダイパット１１上のモールド樹脂５０の剥離が発生したとしても、ダイパッド１１上のワイヤ接続部までの剥離の進行を抑え、ワイヤ４０の寿命を長くすることができる。   Therefore, according to the present embodiment, in the semiconductor device 100 in which the semiconductor element 20 is mounted on the die pad 11, the bonding wire 40 is connected to the die pad 11, and these are sealed with the mold resin 50, Even if the mold resin 50 is peeled off, the progress of the peeling to the wire connecting portion on the die pad 11 can be suppressed and the life of the wire 40 can be extended.

［変形例］
図２〜図５は、本実施形態におけるダイパッド１１の突出部１１ｃの各種の変形例を示す概略平面図である。 [Modification]
2 to 5 are schematic plan views showing various modifications of the protruding portion 11c of the die pad 11 in the present embodiment.

図２に示される第１の変形例では、突出部１１ｃにくびれ１１ｄを設けたものである。具体的には、突出部１１ｃのうち半導体素子２０とは離れる方向へ延びる部位や半導体素子２０へ向かう方向へ延びる部位に、くびれ１１ｄを設けることができる。   In the first modification shown in FIG. 2, a constriction 11d is provided on the protrusion 11c. Specifically, the constriction 11 d can be provided in a portion of the protruding portion 11 c that extends in a direction away from the semiconductor element 20 or a portion that extends in a direction toward the semiconductor element 20.

このような突出部１１ｃにくびれ１１ｄを設けた構成によれば、せん断応力が小さくなり、モールド樹脂５０が剥離する距離を短くすることができ、剥離抑制の効果を大きくすることができる。   According to such a configuration in which the constriction 11d is provided in the protruding portion 11c, the shear stress is reduced, the distance that the mold resin 50 is peeled off can be shortened, and the effect of suppressing peeling can be increased.

図３に示される第２の変形例は、突出部１１ｃのうち半導体素子２０へ向かう方向へ延びる部位に、溝１１ｅもしくはスリット１１ｆが設けられていることを特徴としたものである。   The second modification shown in FIG. 3 is characterized in that a groove 11e or a slit 11f is provided in a portion extending in the direction toward the semiconductor element 20 in the protruding portion 11c.

なお、図３では、突出部１１ｃのうち半導体素子２０へ向かう方向へ延びる部位に、溝１１ｅおよびスリット１１ｆを１個ずつ設けた構成としているが、それ以外にも、たとえば溝１１ｅだけでもよいし、スリット１１ｆだけでもよい。また、溝１１ｅおよびスリット１１ｆの本数も単数でも複数でもよい。   In FIG. 3, one groove 11e and one slit 11f are provided in a portion extending in the direction toward the semiconductor element 20 in the protruding portion 11c. However, for example, only the groove 11e may be provided. Only the slit 11f may be used. The number of grooves 11e and slits 11f may be singular or plural.

この溝１１ｅもしくはスリット１１ｆは、突出部１１ｃのどこに設けても剥離進行の抑制効果はあるが、図３に示されるように、突出部１１ｃのうち半導体素子２０へ向かう方向へ延びる部位に設けることが好ましい。   The groove 11e or the slit 11f has an effect of suppressing the progress of peeling regardless of where the protrusion 11c is provided. However, as shown in FIG. 3, the groove 11e or the slit 11f is provided in a portion extending in the direction toward the semiconductor element 20 in the protrusion 11c. Is preferred.

それによれば、突出部１１ｃの先端部１１ｂすなわちダイパッド１１上のワイヤ接続部までのモールド樹脂５０剥離の進行を、溝１１ｅもしくはスリット１１ｆによってより確実に抑制することができ、好ましい。   According to this, the progress of the mold resin 50 peeling to the tip end portion 11b of the protruding portion 11c, that is, the wire connecting portion on the die pad 11, can be more reliably suppressed by the groove 11e or the slit 11f, which is preferable.

図４に示される第３の変形例では、突出部１１ｃにおけるＵ字部の先端をさらに延ばし、突出部１１ｃ全体をＧ字形状としたものである。   In the 3rd modification shown by FIG. 4, the front-end | tip of the U-shaped part in the protrusion part 11c is extended further, and the protrusion part 11c whole is made into G shape.

具体的には、上記図１〜図３に示されるようなＵ字形状の突出部１１ｃの先端部から、さらに半導体素子２０と平行な方向に延びる部分を設けている。それによれば、さらにせん断応力が小さくなり、好ましい剥離抑制効果が得られる。   Specifically, a portion extending in a direction parallel to the semiconductor element 20 is further provided from the tip of the U-shaped protruding portion 11c as shown in FIGS. According to this, the shear stress is further reduced, and a preferable peeling suppressing effect is obtained.

また、この図４に示される第３の変形例においても、突出部１１ｃに溝やスリットを設けてもよい。具体的には、図５に示される第４の変形例のように、スリットとしてのロックホール１１ｇを設けてよい。   Also in the third modification shown in FIG. 4, a groove or a slit may be provided in the protruding portion 11c. Specifically, a lock hole 11g as a slit may be provided as in the fourth modification shown in FIG.

（他の実施形態）
なお、上記実施形態では、ボンディングワイヤ４０は、ダイパッド１１と半導体素子２０とを接続するものとしていたが、ダイパッド１１には半導体素子２０との間以外にも、何らかの部位との間でボンディングワイヤが接続された形態としてもよい。 (Other embodiments)
In the above-described embodiment, the bonding wire 40 connects the die pad 11 and the semiconductor element 20. However, the bonding wire 40 is not connected between the die pad 11 and any part other than the semiconductor element 20. It is good also as a connected form.

要するに、本発明は、半導体素子２０と、半導体素子２０が搭載されるダイパッド１１と、を備え、ダイパッド１１にはボンディングワイヤ４０が接続されており、半導体素子２０、ダイパッド１１およびボンディングワイヤ４０がモールド樹脂５０によって包み込まれるように封止されてなる半導体装置において、ダイパッド１１には、上記したＵ字形状を有する突出部１１ｃが延設されており、突出部１１ｃの先端部１１ａに、ボンディングワイヤ４０が接続されていることを主たる特徴としたものであり、その他の部分については、適宜設計変更が可能である。   In short, the present invention includes a semiconductor element 20 and a die pad 11 on which the semiconductor element 20 is mounted, and a bonding wire 40 is connected to the die pad 11, and the semiconductor element 20, the die pad 11 and the bonding wire 40 are molded. In the semiconductor device that is sealed so as to be wrapped by the resin 50, the die pad 11 is provided with the protruding portion 11c having the U-shape described above, and the bonding wire 40 is connected to the distal end portion 11a of the protruding portion 11c. The main feature is that they are connected, and the design of the other parts can be changed as appropriate.

本発明の実施形態に係る半導体装置の構成を示す概略平面図である。1 is a schematic plan view showing a configuration of a semiconductor device according to an embodiment of the present invention. 上記実施形態におけるダイパッドの突出部の第１の変形例を示す概略平面図である。It is a schematic plan view which shows the 1st modification of the protrusion part of the die pad in the said embodiment. 上記実施形態におけるダイパッドの突出部の第２の変形例を示す概略平面図である。It is a schematic plan view which shows the 2nd modification of the protrusion part of the die pad in the said embodiment. 上記実施形態におけるダイパッドの突出部の第３の変形例を示す概略平面図である。It is a schematic plan view which shows the 3rd modification of the protrusion part of the die pad in the said embodiment. 上記実施形態におけるダイパッドの突出部の第４の変形例を示す概略平面図である。It is a schematic plan view which shows the 4th modification of the protrusion part of the die pad in the said embodiment. 従来のダイパット上にスリットを入れる構成を示す概略平面図である。It is a schematic plan view which shows the structure which puts a slit on the conventional die pad. 従来のダイパットの端部をＬ字状に延ばした構成を示す概略平面図である。It is a schematic plan view which shows the structure which extended the edge part of the conventional die pad to the L-shape.

符号の説明Explanation of symbols

１０…リードフレーム、１１…リードフレームのダイパッド、
１１ａ…突出部の根元部、１１ｂ…突出部の先端部、１１ｃ…突出部、
１１ｅ…溝、１１ｆ…スリット、１２…リードフレームのリード部、
２０…半導体素子、４０…ボンディングワイヤ、５０…モールド樹脂。 10 ... Lead frame, 11 ... Lead frame die pad,
11a ... the base of the protrusion, 11b ... the tip of the protrusion, 11c ... the protrusion,
11e ... groove, 11f ... slit, 12 ... lead part of lead frame,
20 ... Semiconductor element, 40 ... Bonding wire, 50 ... Mold resin.

Claims (3)

半導体素子（２０）と、
前記半導体素子（２０）が搭載されるダイパッド（１１）と、を備え、
前記ダイパッド（１１）にはボンディングワイヤ（４０）が接続されており、
前記半導体素子（２０）、前記ダイパッド（１１）および前記ボンディングワイヤ（４０）がモールド樹脂（５０）によって包み込まれるように封止されてなる半導体装置において、
前記ダイパッド（１１）には、根元部（１１ａ）から前記半導体素子（２０）とは離れる方向へ延び途中でＵターンして先端部（１１ｂ）が前記半導体素子（２０）へ向かう方向へ延びるＵ字形状を有する突出部（１１ｃ）が延設されており、
前記突出部（１１ｃ）の前記先端部（１１ａ）に、前記ボンディングワイヤ（４０）が接続されていることを特徴とする半導体装置。 A semiconductor element (20);
A die pad (11) on which the semiconductor element (20) is mounted;
A bonding wire (40) is connected to the die pad (11),
In the semiconductor device in which the semiconductor element (20), the die pad (11), and the bonding wire (40) are sealed so as to be encased in a mold resin (50),
The die pad (11) extends in a direction away from the semiconductor element (20) from the base part (11a) and makes a U-turn in the middle, and the tip part (11b) extends in a direction toward the semiconductor element (20). A protruding portion (11c) having a letter shape is extended,
The semiconductor device, wherein the bonding wire (40) is connected to the tip (11a) of the protrusion (11c). 前記突出部（１１ｃ）のうち前記半導体素子（２０）へ向かう方向へ延びる部位に、溝（１１ｅ）もしくはスリット（１１ｆ）が設けられていることを特徴とする請求項１に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein a groove (11 e) or a slit (11 f) is provided in a portion extending in a direction toward the semiconductor element (20) in the protrusion (11 c). 前記ボンディングワイヤ（４０）は、前記ダイパッド（１１）と前記半導体素子（２０）とを接続するものであることを特徴とする請求項１または２に記載の半導体装置。
The semiconductor device according to claim 1, wherein the bonding wire (40) connects the die pad (11) and the semiconductor element (20).
JP2004209001A 2004-07-15 2004-07-15 Semiconductor device Expired - Fee Related JP4305310B2 (en)

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Publication number Priority date Publication date Assignee Title
JP2013080848A (en) * 2011-10-05 2013-05-02 Rohm Co Ltd Semiconductor device
JP2015233114A (en) * 2014-05-13 2015-12-24 株式会社デンソー Semiconductor device
CN109817598A (en) * 2017-11-22 2019-05-28 Tdk株式会社 Semiconductor device

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JP2001313363A (en) * 2000-05-01 2001-11-09 Rohm Co Ltd Resin-encapsulated semiconductor device

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JP2001015668A (en) * 1999-07-02 2001-01-19 Mitsubishi Electric Corp Resin-sealed semiconductor package
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JP2013080848A (en) * 2011-10-05 2013-05-02 Rohm Co Ltd Semiconductor device
JP2015233114A (en) * 2014-05-13 2015-12-24 株式会社デンソー Semiconductor device
CN109817598A (en) * 2017-11-22 2019-05-28 Tdk株式会社 Semiconductor device
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