JP2006030260A - Semiconductor element mounted substrate, method for manufacturing semiconductor element mounted substrate, mounting apparatus, mounting method, electro-optical device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element mounted substrate capable of easing stress on a connection part between a wiring pattern and a terminal electrode and preventing the occurrence of peeling and disconnection, a method for manufacturing the semiconductor element mounted substrate, a mounting apparatus, a mounting method, an electrooptical device provided with the semiconductor element mounted substrate, and electronic equipment. <P>SOLUTION: In the semiconductor element mounted substrate 1, a flexible wiring board 2 on which a wiring pattern 2a is formed and a semiconductor element 3 provided with a projected electrode 3a are mutually joined through an adhesive layer 4, wherein the flexible wiring substrate 2 has a bent part 5 on the side of the semiconductor element 3 and the bent part 5 stores a part of the adhesive layer 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor element mounting substrate, a semiconductor element mounting substrate manufacturing method, a mounting apparatus, a mounting method, an electro-optical device, and an electronic apparatus.

  In recent years, mainly in the field of portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal data assistance), as the devices become lighter and thinner, the thickness of the built-in wiring board and the density of the wiring are increased. Is being promoted. Further, a technique using a COF (Chip On Film) substrate configured by connecting a driving IC on a flexible substrate is known.

As a method of connecting such a wiring board to a semiconductor element such as a driving IC, an anisotropic conductive film ACF (Anisotoroic Conductive Film) is disposed between a terminal electrode of the semiconductor element and a terminal of the wiring board, and heating and A mounting technique for applying pressure is known (for example, see Patent Document 1).
Japanese Patent Laid-Open No. 10-270499

However, as the wiring and terminal electrodes become denser and the wiring board becomes thinner, the wiring pattern on the wiring board becomes easier to peel off from the terminal electrode of the semiconductor element in the mounting process, resulting in the disconnection of the wiring. There was a problem that.
The present invention has been made in order to solve the above-described problems. A semiconductor element mounting substrate that can relieve stress at a connection portion between a wiring pattern and a terminal electrode and prevent peeling and disconnection. An object of the present invention is to provide a manufacturing method, a mounting apparatus, and a mounting method, and to provide an electro-optical device and an electronic apparatus including a semiconductor element mounting substrate.

  The present inventor has found that the pitch of the connection portion between the wiring board and the semiconductor element and the wiring pattern width have become finer than before as the density of wiring and terminal electrodes and the thickness of the wiring board have been reduced in recent years. Focused on what has come. And when connecting a wiring board and a semiconductor element, it discovered that it was difficult to connect both only by adhesive force by the conventional method. Specifically, when mounting a wiring board and a semiconductor element, the wiring pattern on the wiring board becomes easy to peel from the terminal electrode of the semiconductor element, and the wiring pattern is disconnected. Therefore, the present inventor has come up with the present invention having the following means based on the above.

That is, the semiconductor element mounting board of the present invention is a semiconductor element mounting board in which a flexible wiring board on which a wiring pattern is formed and a semiconductor element having a protruding electrode are bonded via an adhesive layer. The flexible wiring board has a bent portion on a side of the semiconductor element, and the bent portion houses a part of the adhesive layer.
By forming such a bent portion, the stress in the flexible wiring board is dispersed at the connecting portion between the flexible wiring board and the semiconductor element, and the direction in which the flexible wiring board extends is distributed. The tensile stress applied to is dispersed. In other words, when the flexible wiring board is connected to the semiconductor element in a straight state as in the prior art, when a force is applied in the extending direction of the flexible wiring board, the wiring pattern and the protruding electrode However, when the bent portion is formed as described above, the tensile stress resulting from such separation or disconnection is dispersed. Therefore, by forming the bent portion, it is possible to prevent disconnection or peeling at the connection portion between the flexible wiring substrate and the semiconductor element, specifically, the connection surface between the wiring pattern and the protruding electrode.

  In addition, since the bent portion is formed, not only the tensile stress due to peeling or disconnection is dispersed, but also an adhesive layer is accommodated between the side of the semiconductor element and the bent portion. The contact area with the adhesive layer is larger than when the wiring board is connected to the semiconductor element in a straight state. Therefore, the connection strength can be improved.

In the semiconductor element mounting substrate, the adhesive layer includes anisotropic conductive particles or anisotropic conductive films.
In this way, not only can the disconnection and peeling at the connection portion between the flexible wiring board and the semiconductor element be prevented, but also the connection strength between the flexible wiring board and the semiconductor element can be improved, The semiconductor element can be made conductive.

Also, the method for manufacturing a semiconductor element mounting substrate of the present invention is a method for manufacturing a semiconductor element mounting substrate in which a flexible wiring substrate on which a wiring pattern is formed and a semiconductor element having a protruding electrode are bonded via an adhesive layer. And the bending part of the said flexible wiring board is formed in the side of the said semiconductor element, It is characterized by the above-mentioned.
By forming the bent portion in this way, the stress inside the flexible wiring board is dispersed at the connecting portion between the flexible wiring board and the semiconductor element, and the flexible wiring board extends in the extending direction. Since the applied tensile stress is dispersed, disconnection or peeling at the connection portion between the flexible wiring board and the semiconductor element can be prevented.
Further, by forming the bent portion, not only the tensile stress caused by peeling or disconnection is dispersed, but also an adhesive layer is accommodated between the side of the semiconductor element and the bent portion, so that the flexible wiring board The contact area with the adhesive layer is larger than when the semiconductor element is connected in a straight state, and the connection strength can be improved.

Further, in the method of manufacturing the semiconductor element mounting substrate, the step of fixing the flexible wiring substrate outside the portion where the protruding electrode and the wiring pattern are in contact, and the protruding electrode of the semiconductor element Heating and pressurizing the wiring pattern of the flexible wiring board, and after releasing the fixed state of the flexible wiring board, the heating and pressurizing process is terminated.
Here, the flexible wiring board is thermally expanded by the process of heating and pressurizing, and is contracted by the end of the heating and pressurizing. For this reason, when heating and pressurization are finished with the flexible wiring board fixed, the flexible wiring board contracts to generate a tensile stress, and the wiring pattern is disconnected.
Therefore, in the present invention, heating and pressurization are terminated after the flexible wiring board is released from the fixed state, and therefore the flexible wiring board is in a state where one of the flexible wiring boards is left free. The wiring board contracts. Therefore, the tensile stress accompanying shrinkage of the fixed flexible wiring board does not occur. Thereby, the disconnection and peeling in the connection part of a flexible wiring board and a semiconductor element can be prevented.

In the method for manufacturing a semiconductor element mounting board, the semiconductor element is fixed at a position where the flexible wiring board and the semiconductor element face each other.
In this manner, by fixing the facing portion to the semiconductor element, the semiconductor element and the flexible wiring board can be fixed with high accuracy without causing a positional shift between the semiconductor element and the flexible wiring board.

The mounting device of the present invention is a mounting device for mounting a flexible wiring board on which a wiring pattern is formed and a semiconductor element having a protruding electrode via an adhesive layer, and the flexible wiring board is mounted on the mounting board. A substrate mounting table to be mounted; and a heating and pressurizing means for holding and heating the semiconductor element and heating and pressurizing the flexible wiring board. It is characterized by forming a bent portion.
By forming the bent portion in this way, the stress inside the flexible wiring board is dispersed at the connecting portion between the flexible wiring board and the semiconductor element, and the flexible wiring board extends in the extending direction. Since the applied tensile stress is dispersed, disconnection or peeling at the connection portion between the flexible wiring board and the semiconductor element can be prevented.
Further, by forming the bent portion, not only the tensile stress caused by peeling or disconnection is dispersed, but also an adhesive layer is accommodated between the side of the semiconductor element and the bent portion, so that the flexible wiring board The contact area with the adhesive layer is larger than when the semiconductor element is connected in a straight state, and the connection strength can be improved.
Furthermore, in the present invention, since the above-described effect can be obtained only by forming the bent portion, the bent portion can be easily formed using a conventional mounting apparatus.

In the mounting apparatus, the board mounting table includes a fixing unit that fixes the flexible wiring board outside a portion where the protruding electrode and the wiring pattern are in contact with each other.
Thus, by providing the fixing means, the flexible wiring substrate can be fixed to the substrate mounting table. In addition, since the fixing means fixes the flexible wiring substrate outside the portion where the protruding electrode and the wiring pattern are in contact with each other, the bent portion can be formed only between the fixing means and the protruding electrode.

Further, the mounting method of the present invention is a mounting method for mounting a flexible wiring board on which a wiring pattern is formed and a semiconductor element having a protruding electrode through an adhesive layer, the side of the semiconductor element being And forming a bent portion of the flexible wiring board.
By forming the bent portion in this way, the stress inside the flexible wiring board is dispersed at the connecting portion between the flexible wiring board and the semiconductor element, and the flexible wiring board extends in the extending direction. Since the applied tensile stress is dispersed, disconnection or peeling at the connection portion between the flexible wiring board and the semiconductor element can be prevented.
Further, by forming the bent portion, not only the tensile stress caused by peeling or disconnection is dispersed, but also an adhesive layer is accommodated between the side of the semiconductor element and the bent portion, so that the flexible wiring board The contact area with the adhesive layer is larger than when the semiconductor element is connected in a straight state, and the connection strength can be improved.
Furthermore, in the present invention, since the above-described effects can be obtained only by forming the bent portion, the bent portion can be easily formed using a conventional mounting method.

In addition, an electro-optical device according to the present invention includes the semiconductor element mounting substrate described above.
Examples of such an electro-optical device include a liquid crystal display device, an organic EL (electroluminescence) display device, an electrophoretic display device, a device using plasma emission or fluorescence by electron emission (for example, PDP, FED, SED), A light valve made of a liquid crystal device used in a projector can be exemplified.
By doing so, it is possible to realize an electro-optical device in which disconnection and peeling are suppressed.

According to another aspect of the invention, there is provided an electronic apparatus including the electro-optical device described above.
Examples of such electronic devices include information processing devices such as mobile phones, mobile information terminals, watches, word processors, and personal computers. Moreover, a television having a large display screen, a large monitor, a projector, and the like can be exemplified. As described above, when the electronic apparatus includes the above-described electro-optical device, it is possible to provide an electronic apparatus in which failure such as disconnection is suppressed.

  Hereinafter, a semiconductor element mounting substrate, a method for manufacturing a semiconductor element mounting substrate, a mounting apparatus, a mounting method, an electro-optical device, and an electronic apparatus according to the present invention will be described in detail with reference to the drawings.

(Semiconductor element mounting board)
First, a semiconductor element mounting substrate of the present invention will be described with reference to FIG.
FIG. 1 is a side sectional view showing a semiconductor element mounting substrate.
As shown in FIG. 1, the semiconductor element mounting substrate 1 has a configuration in which a film substrate (flexible wiring substrate) 2 and a semiconductor element 3 are connected via an anisotropic conductive film 4.
Here, the film substrate 2 has a configuration in which the wiring pattern 2a is formed on a base substrate such as polyimide having a thickness of 25 μm, for example, and has sufficient flexibility. The wiring pattern 2a is formed by patterning a metal thin film such as Cu. Further, the wiring pattern 2 a is connected to the protruding electrode 3 a of the semiconductor element 3 through the anisotropic conductive film 4. Further, the wiring pattern 2a is formed with a thickness of about 7 μm and a width of 15 μm, and the wiring pattern 2a is formed with a width of 10 μm at a portion connected to the protruding electrode 3a.
Moreover, the film substrate 2 leaves the exposed wiring pattern 2a, and protects the wiring pattern 2a with the protective resist 2b at other portions.

The semiconductor element 3 is a so-called integrated circuit, and includes a protruding electrode 3a for connecting to the wiring pattern 2a. The number of electrode terminals of the protruding electrode 3a is about 600, and is formed at a pitch of 40 μm.
The anisotropic conductive film 4 functions as an adhesive layer that adheres and fixes the semiconductor element 3 and the film substrate 2 as well as providing conduction between the protruding electrode 3a and the wiring pattern 2a. Furthermore, the anisotropic conductive film 4 can have conductivity anisotropy. Specifically, in the anisotropic conductive film 4, conductive particles (anisotropic conductive particles) 4b are dispersed in the adhesive resin 4a.
The adhesive resin 4a is made of a thermoplastic hot melt resin such as urethane or polyester, or a thermosetting resin such as epoxy.
The conductive particles 4b are made of metal particles such as copper, nickel, gold, and solder, or particles having a particle surface made of styrene resin or the like covered with a conductive layer such as nickel-gold.
The anisotropic conductive film 4 composed of the adhesive resin 4a and the conductive particles 4b is necessary for a portion to be electrically connected by controlling the content, shape, size, etc. of the metal particles as necessary. When pressure is applied, the adhesive has conductivity in the thickness direction and retains insulation in the surface direction, and functions as an adhesive having anisotropic conductivity.
Further, in the semiconductor element mounting substrate 1, as described as a feature of the present invention, a bent portion 5 formed by bending the film substrate 2 on the side of the semiconductor element 3 is provided. The bent portion 5 accommodates a part of the anisotropic conductive film 4. Further, the bent portion 5 is provided on the entire circumference of the semiconductor element 3 and accommodates the anisotropic conductive film 4 over the entire circumference.

As described above, in the semiconductor element mounting substrate 1 of the present embodiment, the bending portion 5 is provided, so that the stress inside the film substrate 2 is dispersed at the connection portion between the film substrate 2 and the semiconductor element 3. In addition, the tensile stress applied in the direction in which the film substrate 2 extends is dispersed. In other words, when the film substrate 2 is connected to the semiconductor element 3 in a straight state as in the prior art, when a force is applied in the extending direction of the film substrate 2, the wiring pattern 2a and the protruding electrode 3a However, when the bent portion 5 is formed as described above, the tensile stress resulting from such separation or disconnection is dispersed. Therefore, by forming the bent portion 5, it is possible to prevent disconnection or peeling at the connection portion between the film substrate 2 and the semiconductor element 3, specifically, the connection surface between the wiring pattern 2a and the protruding electrode 3a.
Further, the formation of the bent portion 5 not only disperses the tensile stress due to peeling or disconnection, but also accommodates the anisotropic conductive film 4 between the side of the semiconductor element 3 and the bent portion 5. Therefore, the contact area with the anisotropic conductive film 4 becomes larger than when the film substrate 2 is connected to the semiconductor element 3 in a straight state. Therefore, the connection strength can be improved.

  Further, since the wiring pattern 2a and the protruding electrode 3a are connected via the anisotropic conductive film 4, not only the disconnection or peeling at the connecting portion between the film substrate 2 and the semiconductor element 3 can be prevented, but also the film substrate 2 The film substrate 2 and the semiconductor element 3 can be made conductive while improving the connection strength between the semiconductor element 3 and the semiconductor element 3.

(Mounting device)
Next, the mounting apparatus of the present invention will be described with reference to FIG.
2A and 2B are diagrams illustrating a configuration of the mounting apparatus, in which FIG. 2A is a perspective view illustrating a schematic configuration, and FIG. 2B is a side cross-sectional view illustrating a main part of the mounting apparatus.

  As shown in FIG. 2, the mounting apparatus 10 is roughly composed of a table portion 11 and a connection head portion 12. The table unit 11 includes a moving table unit 13, a substrate holder (substrate mounting table) 14, and a semiconductor element mounting unit 15. The connection head unit 12 includes a head support unit 16, a vertical movement mechanism 17, a tool rotation mechanism 18, and a heating and pressing tool (heating and pressing means) 19. Further, the moving table unit 13 includes an X stage 13x and a Y stage 13y.

Here, each component will be described.
The table unit 11 is provided below the main body of the mounting apparatus 10. Since the moving table unit 13 includes the X stage 13x and the Y stage 13y, the substrate holder 14 can be freely moved in the XY directions and can be fixed at an arbitrary position. Further, the table unit 11 includes a semiconductor element mounting unit 15, and a plurality of semiconductor elements 3 before mounting are mounted on the semiconductor element mounting unit 15. Further, the film substrate 2 is placed on the substrate holder 14.
Further, the substrate holder 14 is configured such that the roughness and material of the upper surface are different according to the material, thermal conductivity, or roughness of the bottom surface of the substrate 2 to be held. Further, the upper surface of the substrate holder 14 may be a mirror surface, but is not rougher than the surface roughness of the back surface of the film substrate 2 to be placed, in other words, the surface roughness of the back surface of the film substrate 2 is the upper surface of the substrate holder 14. It is preferable that it is rougher than the surface roughness.

  The connection head part 12 is provided above the main body of the mounting apparatus 10. The semiconductor element 3 can be positioned in the rotation direction around the Z-axis by the tool rotation mechanism 18 provided in the head support portion 16, and the semiconductor element 3 held by the heating and pressing tool 19 can be positioned on the film substrate. 2 can be heated and pressurized, and the semiconductor element 3 can be connected to an arbitrary position of the film substrate 2 by the vertical movement mechanism 17.

  Further, the vertical movement mechanism 17 can move the heating and pressing tool 19 in the Z-axis direction in the figure by driving means such as an air cylinder or a motor. Accordingly, the semiconductor element 3 held by the heating and pressing tool 19 is moved in the vertical vertical direction by the extension operation of the vertical movement mechanism 17. The vertical movement mechanism 17 can apply a pressure of about 1 to 3.5 MPa to the film substrate 2, whereby the wiring pattern 2 a of the film substrate 2 placed on the upper surface of the substrate holder 14. The protruding electrode 3a of the semiconductor element 3 is heated and pressurized via the anisotropic conductive film 4.

  Further, the heating and pressing tool 19 is provided with a heating mechanism such as a heater inside, and can be heated by a constant heat method. Furthermore, the heater is configured to be able to set an arbitrary temperature in a temperature range of about 200 to 450 ° C. The bottom surface of the heating and pressing tool 19 is formed into a flat surface. In addition, in order to make the shape of the contact surface with the semiconductor element 3 variable according to the shape of the semiconductor element mounting substrate 1 to be manufactured, the jig may be attached to the bottom surface of the heating and pressing tool 19. preferable. With such a configuration, the contact surface can be set to a square shape, an elongated rectangular shape, or any other shape.

  Further, as shown in FIG. 2B, the heating and pressing tool 19 and the substrate holder 14 are provided with a mechanism for holding the semiconductor element 3. Specifically, the heating and pressing tool 19 is provided with an adsorption hole 19a for adsorbing and holding the semiconductor element 3, and the substrate holder 14 has a first adsorption hole (fixing means) 14a and a second adsorption hole (fixation). Means) 14b. Here, the first suction hole 14 a is provided so as to face the approximate center of the semiconductor element 3. The second suction hole 14 b is provided outside the protruding electrode 3 a of the semiconductor element 3. Further, the suction holes 19a, the first suction holes 14a, and the second suction holes 14b are connected to a decompression pump (not shown), and the semiconductor element 3 and the film substrate 2 can be attached and detached by driving the decompression pump. It has become. Further, the shape of each suction hole is preferably 2 mm or less in diameter, desirably 1.5 mm to 1 mm in diameter.

Furthermore, the film substrate 2 can be attached and detached independently at the first suction hole 14a and the second suction hole 14b. That is, it is possible to release the adsorption force by the second adsorption hole 14b while adsorbing the film substrate 2 only by the first adsorption hole 14a.
In addition, in this embodiment, although the structure which fixes the film board | substrate 2 using the adsorption | suction force by the drive of a decompression pump is employ | adopted as a fixing means, this is not limited. For example, by adopting a fixing means for fixing the film substrate 2 to the substrate holder 14 by arranging a ferromagnetic material in a part of the substrate holder 14 and utilizing the magnetic force acting between the ferromagnetic material and the magnet. Also good.
Further, a recess may be formed on the substrate holder 14 in correspondence with the position where the second suction hole 14b is formed, and the film substrate 2 may be fixed via the suction hole formed in the recess.

(Manufacturing method of semiconductor element mounting substrate, mounting method)
Next, with reference to FIG. 3 and FIG. 4, a manufacturing method (mounting method) of the semiconductor element mounting substrate of the present invention by using the mounting apparatus 10 will be described.
FIG. 3 is a cross-sectional view showing the manufacturing process of the semiconductor element mounting substrate 1.
Note that the cross-sectional view shown in FIG. 3 shows an inverted view of the semiconductor element mounting substrate 1 shown in FIG.

First, as shown in FIG. 3A, the heating and pressing tool 19 holds the semiconductor element 3 by suction, and the substrate holder 14 fixes the film substrate 2 by suction. Specifically, after the vertical movement mechanism 17 and the movement table unit 13 are driven, the heating and pressing tool 19 sucks and holds the semiconductor element 3 mounted on the semiconductor element mounting unit 15, and then the semiconductor element 3 is moved. While being held, the film substrate 2 is disposed to face the film substrate 2.
Further, in the substrate holder 14, both the first suction hole 14a and the second suction hole 14b perform a suction operation (the semiconductor element is fixed at a position where the flexible wiring board and the semiconductor element face each other).
In addition, the anisotropic conductive film 4 is affixed beforehand on the wiring pattern 2a used as the connection range of the film substrate 2 by the anisotropic conductive film sticking apparatus which is not shown in figure.

Next, as shown in FIG. 3B, the vertical movement mechanism 17 extends to lower the heating and pressing tool 19 and bring the protruding electrode 3 a of the semiconductor element 3 into contact with the anisotropic conductive film 4.
Further, as shown in FIG. 3C, the heating and pressing tool 19 is lowered to join the protruding electrode 3a to the wiring pattern 2a of the film substrate 2, and the protruding electrode 3a and the wiring pattern 2a are heated and pressed ( A step of heating and pressurizing the protruding electrode of the semiconductor element onto the wiring pattern of the flexible wiring board).

  In such heating and pressurization, the temperature of the heating and pressing tool 19 is adjusted to a temperature in the range of about 210 to 450 ° C so that the temperature of the anisotropic conductive film 4 is about 150 to 230 ° C. Done in The cylinder 6 is set so that the pressure applied by the heating and pressing tool 19 to the film substrate 2 is about 1 to 3.5 MPa. Moreover, the time for the heating and pressing tool 19 to heat and press the film substrate 2 is about 3 to 15 seconds.

Further, before the heating and pressurization by the heating and pressing tool 19 is completed, the suction fixing of the film substrate 2 in the second suction hole 14b of the substrate holder 14 is released.
Here, with reference to FIG. 4, the timing which cancels | releases fixation by the 2nd adsorption hole 14b with respect to the time which heating and pressurization require is demonstrated.
FIG. 4 is a diagram showing a time (horizontal axis) required for heating and pressurization by the heating and pressing tool 19 and a degree of curing (vertical axis) of the anisotropic conductive film 4 associated therewith.
As shown in FIG. 4, when heating and pressurization by the heating and pressing tool 19 are started, the anisotropic conductive film 4 is softened and melted by the heat supplied by the heating and pressing of the heating and pressing tool 19. Then, the degree of cure decreases to point P. Further, the curing proceeds suddenly at the point P as a boundary. When the heating and pressurizing time reaches t1, the curing degree becomes 100%. In this process of changing the degree of cure, when the time t2 when the degree of cure is about 70% to 80% is reached, the suction fixing of the second suction holes 14b in the substrate holder 14 is released. As a result, the time during which heating and pressurization are performed while the fixation is released is t3. Thus, the film substrate 2 expands on the side of the semiconductor element 3 by being heated and pressed in a fixed state until reaching the time t2 at which the degree of cure reaches about 70% to 80%. The bent portion 5 shown in FIG. 3C or FIG. 1 is formed. Further, the anisotropic conductive film 4 is melted and spreads by heating and pressurization, whereby the anisotropic conductive film 4 is accommodated between the bent portion 5 and the film substrate 2, and on the side of the film substrate 2. Bonded and fixed.

  Further, since the heating / pressurizing tool 19 presses the film substrate 2 in the direction of the liquid crystal panel 21, anisotropy occurs between the wiring pattern 2 a formed on the film substrate 2 and the protruding electrode 3 a of the semiconductor element 3. Conductive particles 4b contained in the conductive film 4 are deformed and sandwiched. In this state, the adhesive resin 4a is cured by the heat supplied to the anisotropic conductive film 4 by holding the adhesive resin 4a until the time t1 when the curing degree of the adhesive resin 4a reaches the curing temperature. Accordingly, the film substrate 2 is connected to the liquid crystal panel 21 with the conductive particles 4b deformed and sandwiched between the wiring pattern 2a and the terminals 26.

  When the above steps are completed, the heating and pressing tool 19 is separated from the film substrate 2 by expanding and contracting the vertical movement mechanism 17 as shown in FIG. As described above, when the heating and pressing tool 19 is separated, the temperature of the anisotropic conductive film 4 is lowered in the pressurized state. Thereby, the mounting of the semiconductor element 3 and the film substrate 2 is completed as shown in FIG.

As described above, in the mounting apparatus 10, the method for manufacturing the semiconductor element mounting substrate 1, and the mounting method of the present embodiment, the film substrate 2 is formed by forming the bent portion 5 of the film substrate 2 on the side of the semiconductor element 3. In the connection part between the film substrate 2 and the semiconductor element 3, the stress inside the film substrate 2 is dispersed and the tensile stress applied in the direction in which the film substrate 2 extends is dispersed. It is possible to prevent disconnection and peeling at the connection portion, specifically, the connection surface between the wiring pattern 2a and the protruding electrode 3a.
Further, by forming the bent portion 5, not only the tensile stress due to peeling or disconnection is dispersed, but also the anisotropic conductive film 4 is accommodated between the side of the semiconductor element 3 and the bent portion 5. The contact area with the anisotropic conductive film 4 becomes larger than when the film substrate 2 is connected to the semiconductor element 3 in a straight state, and the connection strength can be improved.

  In addition, since the heating and pressurization are finished after releasing the fixed state of the film substrate 2 by the second suction holes 14b, the film substrate 2 contracts in a state where one of the film substrates 2 is at a free end. . Therefore, the tensile stress accompanying shrinkage of the fixed film substrate 2 does not occur. Thereby, the disconnection and peeling in the connection part of the film substrate 2 and the semiconductor element 3, specifically the connection surface of the wiring pattern 2a and the protruding electrode 3a can be prevented.

  Further, since the film substrate 2 is fixed by the first suction holes 14a, the semiconductor element 3 and the film substrate 2 can be fixed with high accuracy without causing a positional shift between the semiconductor element 3 and the film substrate 2. .

  Further, since the mounting apparatus 10 includes the second suction hole 14b for fixing the film substrate 2 outside the portion where the protruding electrode 3a and the wiring pattern 2a are in contact, the mounting device 10 is provided between the second suction hole 14b and the protruding electrode 3a. Only the bent portion 5 can be formed.

(Electro-optical device)
Next, an electro-optical device including the semiconductor element mounting substrate 1 will be described with reference to FIGS.
5 and 6 are diagrams illustrating a configuration of the liquid crystal device (electro-optical device), in which FIG. 5 is a perspective view illustrating a schematic configuration of the liquid crystal device, and FIG. 6 is a side view illustrating a main part of the liquid crystal device. .
In the present embodiment, the same components as those of the semiconductor element mounting substrate 1 described above are denoted by the same reference numerals to simplify the description.

  The liquid crystal device 20 is roughly composed of a liquid crystal panel 21 and a semiconductor element mounting substrate 1 connected to the liquid crystal panel 21. In addition, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 21 as necessary.

  The liquid crystal panel 21 has a pair of substrates 23a and 23b bonded by a sealing material 22, and liquid crystal is sealed in a so-called cell gap formed between the substrates 23b and 23b. In other words, the liquid crystal is sandwiched between the substrate 23a and the substrate 23b. These substrates 23a and 23b are generally formed of a light-transmitting material such as glass or synthetic resin. When the substrate 23a and the substrate 23b are formed of glass, borosilicate glass, quartz glass, or soda glass is preferable. A polarizing plate 24a and a polarizing plate 24b are attached to the outer surfaces of the substrate 23a and the substrate 23b. In FIG. 5, the polarizing plate 24b is not shown.

  An electrode 25a is formed on the inner surface of the substrate 23a, and an electrode 25b is formed on the inner surface of the substrate 23b. These electrodes 25a and 25b are formed in stripes or letters, numbers, or other appropriate patterns. The electrodes 25a and 25b are formed of a light-transmitting material such as ITO (Indium Tin Oxide).

  The substrate 23a has a projecting portion that projects from the substrate 23b, and a plurality of terminals 26 are formed on the projecting portion. These terminals 26 are formed simultaneously with the electrode 25a when the electrode 25a is formed on the substrate 23a. Therefore, these terminals 26 are made of, for example, ITO. These terminals 26 include one that extends integrally from the electrode 25a and one that is connected to the electrode 25b via a conductive material (not shown).

  Note that a large number of actual electrodes 25a and 25b and terminals 26 are formed on the substrate 23a and the substrate 23b with extremely narrow intervals, respectively, but in FIG. 5, in order to facilitate understanding of the structure of the liquid crystal panel 21. In addition, the intervals are schematically shown in an enlarged manner, and only a few of them are illustrated, and other portions are omitted. Further, the connection state between the terminal 26 and the electrode 25a and the connection state between the terminal 26 and the electrode 25b are not shown in FIG.

  The semiconductor element mounting substrate 1 is generally composed of a film substrate 2 and a semiconductor element 3 mounted at a predetermined position on the film substrate 2. In addition, although illustration is abbreviate | omitted, the structure which mounted the resistor, the capacitor | condenser, and other chip components in the predetermined position of site | parts other than the site | part in which the semiconductor element 3 is mounted may be sufficient. The film substrate 2 includes a bent portion 5 on the side of the semiconductor element 3. The bent portion 5 holds the anisotropic conductive film 4. A wiring pattern 2 a is formed on the film substrate 2. The wiring pattern 2 a is connected to the protruding electrode 3 a of the semiconductor element 3 through the anisotropic conductive film 4. Note that a large number of actual wiring patterns 2a are formed on the base substrate 31 with extremely narrow intervals. In FIG. 5, in order to facilitate understanding of the structure, the intervals are enlarged and schematically illustrated. In addition, the structure is simplified and illustrated. The wiring pattern 2a includes an output terminal 32a formed on one side part of the mounting structure and an input terminal 32b formed on the side part opposite to the output terminal 32a.

  Further, as shown in FIG. 5, the semiconductor element mounting substrate 1 is fixed to the substrate 23 a of the liquid crystal panel 21 through the anisotropic conductive film 4. Thereby, the semiconductor element 3 and the electrodes 25a and 25b of the liquid crystal panel 21 are electrically connected.

  As described above, in the liquid crystal device 20 of the present embodiment, by forming the bent portion 5, the bonding strength between the film substrate 2 and the semiconductor element 3 is improved and the resistance to the tensile stress inside the film substrate 2 is improved. Will be improved. Therefore, the same effects as those of the semiconductor element mounting substrate 1 can be obtained.

Although the configuration of the liquid crystal device 20 is shown in the present embodiment, the liquid crystal device 20 is not limited as the electro-optical device of the present invention.
In addition to the liquid crystal device 20, a light valve comprising an organic EL device, an electrophoretic device, a display device having fluorescence ability by plasma emission or electron emission (for example, a substrate for PDP, FED, SED), and a liquid crystal device used in a projector. , Etc.

(Electronics)
Next, a projection type display device which is a specific example of the electronic apparatus of the invention will be described with reference to FIG. FIG. 7 is a schematic configuration diagram showing a main part of the projection display device. The projection display device includes the liquid crystal device according to the above-described embodiment as a light modulation unit.

  7, 810 is a light source, 813 and 814 are dichroic mirrors, 815, 816 and 817 are reflection mirrors, 818 is an incident lens, 819 is a relay lens, 820 is an exit lens, and 822, 823 and 824 are liquid crystal devices of the present invention. 825 is a cross dichroic prism, and 826 is a projection lens. The light source 810 includes a lamp 811 such as a metal halide and a reflector 812 that reflects the light of the lamp.

  The dichroic mirror 813 transmits red light contained in white light from the light source 810 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 817 and is incident on the light modulation means 822 for red light. The green light reflected by the dichroic mirror 813 is reflected by the dichroic mirror 814 and is incident on the light modulating means 823 for green light. Further, the blue light reflected by the dichroic mirror 813 passes through the dichroic mirror 814. For blue light, in order to prevent light loss due to a long optical path, a light guide means 821 comprising a relay lens system including an incident lens 818, a relay lens 819, and an exit lens 820 is provided. Blue light is incident on the light modulating means 824 for blue light through the light guiding means 821.

The three color lights modulated by the respective light modulation means are incident on the cross dichroic prism 825. The cross dichroic prism 825 is formed by bonding four right-angle prisms. A dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in an X shape at the interface. Yes. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected onto the screen 827 by the projection lens 826 which is a projection optical system, and the image is enlarged and displayed.
Thus, if the liquid crystal device 20 according to the above-described embodiment is used as the light modulation means 822, 823, and 824 of the projection display device, it is possible to provide a projection display device in which failures such as disconnection are suppressed.

Next, another specific example of the electronic apparatus of the present invention will be described.
The electronic device has the above-described liquid crystal device 20 as a display unit, and specifically, the one shown in FIG.
FIG. 8A is a perspective view showing an example of a mobile phone. In FIG. 8A, a mobile phone 1000 includes a display unit 1001 using the EL display device 1 described above.
FIG. 8B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 8B, a timepiece 1100 includes a display unit 1101 using the EL display device 1 described above.
FIG. 8C is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 8C, the information processing apparatus 1200 includes an input unit 1201 such as a keyboard, a display unit 1202 using the EL display device 1 described above, and an information processing apparatus main body (housing) 1203.
Each of the electronic devices illustrated in FIGS. 8A to 8C includes the display units 1001, 1101, and 1202 each having the above-described liquid crystal device, so that an electronic device in which failure such as disconnection is suppressed is obtained.
Examples of other electronic devices include video cameras, personal computers, head mounted displays, fax machines with display functions, digital camera finders, portable TVs, DSP devices, PDAs, electronic notebooks, electronic bulletin boards, Monitors, advertising announcement displays, etc.

The sectional side view which shows the semiconductor element mounting board | substrate in this invention. The figure which shows the structure of the mounting apparatus in this invention. The figure for demonstrating the manufacturing method of the semiconductor element mounting board | substrate in this invention. The figure for demonstrating the manufacturing method of the semiconductor element mounting board | substrate in this invention. FIG. 3 is a perspective view illustrating a configuration of an electro-optical device according to the invention. FIG. 3 is a side view illustrating a configuration of an electro-optical device according to the invention. The figure which shows schematic structure of the projection type display apparatus as an electronic device in this invention. FIG. 11 illustrates an electronic device of the present invention.

Explanation of symbols

1 Semiconductor device mounting substrate 2 Film substrate (flexible wiring substrate)
2a wiring pattern 3 semiconductor element 3a bump electrode 4 anisotropic conductive film (adhesive layer)
4b Conductive particles (anisotropic conductive particles)
5 Bending part 10 Mounting device 14 Substrate holder (substrate mounting table)
14a First suction hole (fixing means)
14b Second suction hole (fixing means)
19 Heating and pressing tool (heating and pressing means)
20 Liquid crystal device (electro-optical device)

Claims (10)

A semiconductor element mounting board in which a flexible wiring board on which a wiring pattern is formed and a semiconductor element having a protruding electrode are joined via an adhesive layer,
The flexible wiring board has a bent portion on a side of the semiconductor element,
The bent portion accommodates a part of the adhesive layer.   The semiconductor element mounting substrate according to claim 1, wherein the adhesive layer contains anisotropic conductive particles or anisotropic conductive films. A method of manufacturing a semiconductor element mounting substrate in which a flexible wiring board on which a wiring pattern is formed and a semiconductor element having a protruding electrode are bonded via an adhesive layer,
A method for manufacturing a semiconductor element mounting board, comprising forming a bent portion of the flexible wiring board on a side of the semiconductor element. Fixing the flexible wiring board outside a portion where the protruding electrode and the wiring pattern are in contact with each other;
Heating and pressurizing the protruding electrode of the semiconductor element to the wiring pattern of the flexible wiring board;
Including
4. The method of manufacturing a semiconductor element mounting substrate according to claim 3, wherein the heating and pressurizing step is terminated after the flexible wiring substrate is released from the fixed state.   5. The method of manufacturing a semiconductor element mounting substrate according to claim 3, wherein the semiconductor element is fixed at a position where the flexible wiring substrate and the semiconductor element face each other. A mounting device for mounting a flexible wiring board on which a wiring pattern is formed and a semiconductor element including a protruding electrode via an adhesive layer,
A substrate mounting table on which the flexible wiring substrate is mounted;
Heating and pressurizing means for holding the semiconductor element and heating and pressurizing the flexible wiring board;
Comprising
A mounting apparatus, wherein a bent portion of the flexible wiring board is formed on a side of the semiconductor element.   The mounting apparatus according to claim 6, wherein the board mounting table includes a fixing unit that fixes the flexible wiring board outside a portion where the protruding electrode and the wiring pattern are in contact with each other. A mounting method for mounting a flexible wiring board on which a wiring pattern is formed and a semiconductor element provided with a protruding electrode via an adhesive layer,
A mounting method comprising forming a bent portion of the flexible wiring board on a side of the semiconductor element.   An electro-optical device comprising the semiconductor element mounting substrate according to claim 1. An electronic apparatus comprising the electro-optical device according to claim 9.

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