JP2005535131A - 希釈ガスのスパッタリングによるプラズマ堆積表面層の除去 - Google Patents

希釈ガスのスパッタリングによるプラズマ堆積表面層の除去 Download PDF

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Publication number
JP2005535131A
JP2005535131A JP2004526318A JP2004526318A JP2005535131A JP 2005535131 A JP2005535131 A JP 2005535131A JP 2004526318 A JP2004526318 A JP 2004526318A JP 2004526318 A JP2004526318 A JP 2004526318A JP 2005535131 A JP2005535131 A JP 2005535131A
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JP
Japan
Prior art keywords
gas
dopant
chamber
diluent
plasma
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2004526318A
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English (en)
Japanese (ja)
Inventor
ワルター、スティーブン、アール
ラドバノフ、スベトラーナ・ビー
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JP2005535131A publication Critical patent/JP2005535131A/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2004526318A 2002-08-02 2003-08-01 希釈ガスのスパッタリングによるプラズマ堆積表面層の除去 Withdrawn JP2005535131A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40056002P 2002-08-02 2002-08-02
PCT/US2003/024158 WO2004013371A2 (fr) 2002-08-02 2003-08-01 Enlevement par pulverisation cathodique au gaz de dilution de couches superficielles deposees en phase vapeur activee au plasma

Publications (1)

Publication Number Publication Date
JP2005535131A true JP2005535131A (ja) 2005-11-17

Family

ID=31495837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004526318A Withdrawn JP2005535131A (ja) 2002-08-02 2003-08-01 希釈ガスのスパッタリングによるプラズマ堆積表面層の除去

Country Status (5)

Country Link
EP (1) EP1525333A2 (fr)
JP (1) JP2005535131A (fr)
KR (1) KR20050034731A (fr)
TW (1) TW200402769A (fr)
WO (1) WO2004013371A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008504687A (ja) * 2004-06-23 2008-02-14 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド プラズマ注入のためのエッチングおよび付着制御
JP2008511139A (ja) * 2004-08-20 2008-04-10 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のために表面汚染物質をその場で除去する装置及び方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1936656A1 (fr) * 2006-12-21 2008-06-25 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Générateur de plasma et procédé de nettoyage d'un objet
US8679960B2 (en) 2009-10-14 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate having a non-planar surface
KR20180104171A (ko) * 2010-09-15 2018-09-19 프랙스에어 테크놀로지, 인코포레이티드 이온 소스의 수명 연장 방법
WO2013123140A1 (fr) * 2012-02-14 2013-08-22 Advanced Technology Materials, Inc. Matériaux et mélanges alternatifs pour réduire à un minimum l'accumulation de phosphore dans des applications d'implantation
KR101596466B1 (ko) 2015-07-21 2016-02-22 농업회사법인 주식회사 아그로비즈 수용성 구형비료의 제조방법
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201527A (en) * 1981-06-01 1982-12-10 Toshiba Corp Ion implantation method
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
JP3080867B2 (ja) * 1995-09-25 2000-08-28 日本電気株式会社 Ｓｏｉ基板の製造方法
JP3099819B2 (ja) * 1997-11-28 2000-10-16 セイコーエプソン株式会社 半導体装置の製造方法
GB2336603A (en) * 1998-04-23 1999-10-27 Metaltech Limited A method and apparatus for plasma boronising
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
KR20010039728A (ko) * 1999-07-22 2001-05-15 가와하라 하지메 이온 소스
EP1156511A1 (fr) * 2000-05-19 2001-11-21 Applied Materials, Inc. Appareil de CVD assisté par plasma éloigné

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008504687A (ja) * 2004-06-23 2008-02-14 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド プラズマ注入のためのエッチングおよび付着制御
JP2008511139A (ja) * 2004-08-20 2008-04-10 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のために表面汚染物質をその場で除去する装置及び方法

Also Published As

Publication number Publication date
WO2004013371A3 (fr) 2004-10-21
KR20050034731A (ko) 2005-04-14
WO2004013371A2 (fr) 2004-02-12
TW200402769A (en) 2004-02-16
EP1525333A2 (fr) 2005-04-27

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