JP2005532694A5 - - Google Patents
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- Publication number
- JP2005532694A5 JP2005532694A5 JP2004520755A JP2004520755A JP2005532694A5 JP 2005532694 A5 JP2005532694 A5 JP 2005532694A5 JP 2004520755 A JP2004520755 A JP 2004520755A JP 2004520755 A JP2004520755 A JP 2004520755A JP 2005532694 A5 JP2005532694 A5 JP 2005532694A5
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- gas
- plasma
- etching
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 15
- 238000005530 etching Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- 239000003989 dielectric material Substances 0.000 claims 9
- 239000011261 inert gas Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 230000002265 prevention Effects 0.000 claims 5
- 230000005284 excitation Effects 0.000 claims 3
- 238000009616 inductively coupled plasma Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 230000035939 shock Effects 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000001066 destructive effect Effects 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 125000001153 fluoro group Chemical class F* 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0208729A FR2842388B1 (fr) | 2002-07-11 | 2002-07-11 | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
| PCT/FR2003/002157 WO2004008816A2 (fr) | 2002-07-11 | 2003-07-10 | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005532694A JP2005532694A (ja) | 2005-10-27 |
| JP2005532694A5 true JP2005532694A5 (enExample) | 2006-08-24 |
Family
ID=29763739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004520755A Pending JP2005532694A (ja) | 2002-07-11 | 2003-07-10 | 非常に高い出力の誘導結合プラズマを用いた基板エッチングの方法および装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060060566A1 (enExample) |
| EP (1) | EP1529305A2 (enExample) |
| JP (1) | JP2005532694A (enExample) |
| FR (1) | FR2842388B1 (enExample) |
| WO (1) | WO2004008816A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2842387B1 (fr) * | 2002-07-11 | 2005-07-08 | Cit Alcatel | Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre |
| KR100777151B1 (ko) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | 하이브리드형 플라즈마 반응장치 |
| US8642974B2 (en) * | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
| US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
| US20130048082A1 (en) * | 2011-08-22 | 2013-02-28 | Mirzafer Abatchev | System, method and apparatus for real time control of rapid alternating processes (rap) |
| US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
| RU2503079C1 (ru) * | 2012-04-24 | 2013-12-27 | Евгений Владимирович Берлин | Генератор плазмы (варианты) |
| JPWO2015011829A1 (ja) * | 2013-07-26 | 2017-03-02 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| US10128082B2 (en) | 2015-07-24 | 2018-11-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
| US9706634B2 (en) * | 2015-08-07 | 2017-07-11 | Varian Semiconductor Equipment Associates, Inc | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
| US10141161B2 (en) | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
| US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04199816A (ja) * | 1990-11-29 | 1992-07-21 | Mitsubishi Electric Corp | プラズマｃｖｄ装置 |
| US5456796A (en) * | 1993-06-02 | 1995-10-10 | Applied Materials, Inc. | Control of particle generation within a reaction chamber |
| US5716534A (en) * | 1994-12-05 | 1998-02-10 | Tokyo Electron Limited | Plasma processing method and plasma etching method |
| US6951828B2 (en) * | 1995-11-10 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD method |
| US6121163A (en) * | 1996-02-09 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
| US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
| JPH10125627A (ja) * | 1996-10-24 | 1998-05-15 | Fujitsu Ltd | 半導体装置の製造方法および高融点金属ナイトライド膜の形成方法 |
| US6001268A (en) * | 1997-06-05 | 1999-12-14 | International Business Machines Corporation | Reactive ion etching of alumina/TiC substrates |
| US6267121B1 (en) * | 1999-02-11 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Process to season and determine condition of a high density plasma etcher |
| TW544849B (en) * | 2000-08-29 | 2003-08-01 | Samsung Electronics Co Ltd | Method for manufacturing semiconductor device |
| US20030129106A1 (en) * | 2001-08-29 | 2003-07-10 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
| JP4024053B2 (ja) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | 高周波プラズマ処理方法及び高周波プラズマ処理装置 |
| US6946054B2 (en) * | 2002-02-22 | 2005-09-20 | Tokyo Electron Limited | Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing |
| US8608422B2 (en) * | 2003-10-08 | 2013-12-17 | Tokyo Electron Limited | Particle sticking prevention apparatus and plasma processing apparatus |
-
2002
- 2002-07-11 FR FR0208729A patent/FR2842388B1/fr not_active Expired - Fee Related
-
2003
- 2003-07-10 JP JP2004520755A patent/JP2005532694A/ja active Pending
- 2003-07-10 EP EP03763951A patent/EP1529305A2/fr not_active Withdrawn
- 2003-07-10 WO PCT/FR2003/002157 patent/WO2004008816A2/fr not_active Ceased
- 2003-07-10 US US10/516,455 patent/US20060060566A1/en not_active Abandoned
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