FR2842388B1 - Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance - Google Patents

Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance

Info

Publication number
FR2842388B1
FR2842388B1 FR0208729A FR0208729A FR2842388B1 FR 2842388 B1 FR2842388 B1 FR 2842388B1 FR 0208729 A FR0208729 A FR 0208729A FR 0208729 A FR0208729 A FR 0208729A FR 2842388 B1 FR2842388 B1 FR 2842388B1
Authority
FR
France
Prior art keywords
high power
etching substrate
inductive plasma
inductive
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0208729A
Other languages
English (en)
French (fr)
Other versions
FR2842388A1 (fr
Inventor
Michel Puech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to FR0208729A priority Critical patent/FR2842388B1/fr
Priority to PCT/FR2003/002157 priority patent/WO2004008816A2/fr
Priority to JP2004520755A priority patent/JP2005532694A/ja
Priority to US10/516,455 priority patent/US20060060566A1/en
Priority to EP03763951A priority patent/EP1529305A2/fr
Publication of FR2842388A1 publication Critical patent/FR2842388A1/fr
Application granted granted Critical
Publication of FR2842388B1 publication Critical patent/FR2842388B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
FR0208729A 2002-07-11 2002-07-11 Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance Expired - Fee Related FR2842388B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0208729A FR2842388B1 (fr) 2002-07-11 2002-07-11 Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance
PCT/FR2003/002157 WO2004008816A2 (fr) 2002-07-11 2003-07-10 Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance
JP2004520755A JP2005532694A (ja) 2002-07-11 2003-07-10 非常に高い出力の誘導結合プラズマを用いた基板エッチングの方法および装置
US10/516,455 US20060060566A1 (en) 2002-07-11 2003-07-10 Method and device for substrate etching with very high power inductively coupled plasma
EP03763951A EP1529305A2 (fr) 2002-07-11 2003-07-10 Procede et dispositif pour la gravure de substrat par plasma inducatif a tres forte puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0208729A FR2842388B1 (fr) 2002-07-11 2002-07-11 Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance

Publications (2)

Publication Number Publication Date
FR2842388A1 FR2842388A1 (fr) 2004-01-16
FR2842388B1 true FR2842388B1 (fr) 2004-09-24

Family

ID=29763739

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0208729A Expired - Fee Related FR2842388B1 (fr) 2002-07-11 2002-07-11 Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance

Country Status (5)

Country Link
US (1) US20060060566A1 (enExample)
EP (1) EP1529305A2 (enExample)
JP (1) JP2005532694A (enExample)
FR (1) FR2842388B1 (enExample)
WO (1) WO2004008816A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2842387B1 (fr) * 2002-07-11 2005-07-08 Cit Alcatel Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
US8642974B2 (en) * 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
US20130048082A1 (en) * 2011-08-22 2013-02-28 Mirzafer Abatchev System, method and apparatus for real time control of rapid alternating processes (rap)
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
RU2503079C1 (ru) * 2012-04-24 2013-12-27 Евгений Владимирович Берлин Генератор плазмы (варианты)
JPWO2015011829A1 (ja) * 2013-07-26 2017-03-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US10128082B2 (en) 2015-07-24 2018-11-13 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques to treat substrates using directional plasma and point of use chemistry
US9706634B2 (en) * 2015-08-07 2017-07-11 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques to treat substrates using directional plasma and reactive gas
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10730082B2 (en) * 2016-10-26 2020-08-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for differential in situ cleaning

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04199816A (ja) * 1990-11-29 1992-07-21 Mitsubishi Electric Corp プラズマｃｖｄ装置
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
US5716534A (en) * 1994-12-05 1998-02-10 Tokyo Electron Limited Plasma processing method and plasma etching method
US6951828B2 (en) * 1995-11-10 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD method
US6121163A (en) * 1996-02-09 2000-09-19 Applied Materials, Inc. Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
US5902494A (en) * 1996-02-09 1999-05-11 Applied Materials, Inc. Method and apparatus for reducing particle generation by limiting DC bias spike
JPH10125627A (ja) * 1996-10-24 1998-05-15 Fujitsu Ltd 半導体装置の製造方法および高融点金属ナイトライド膜の形成方法
US6001268A (en) * 1997-06-05 1999-12-14 International Business Machines Corporation Reactive ion etching of alumina/TiC substrates
US6267121B1 (en) * 1999-02-11 2001-07-31 Taiwan Semiconductor Manufacturing Company Process to season and determine condition of a high density plasma etcher
TW544849B (en) * 2000-08-29 2003-08-01 Samsung Electronics Co Ltd Method for manufacturing semiconductor device
US20030129106A1 (en) * 2001-08-29 2003-07-10 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
JP4024053B2 (ja) * 2002-02-08 2007-12-19 キヤノンアネルバ株式会社 高周波プラズマ処理方法及び高周波プラズマ処理装置
US6946054B2 (en) * 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US8608422B2 (en) * 2003-10-08 2013-12-17 Tokyo Electron Limited Particle sticking prevention apparatus and plasma processing apparatus

Also Published As

Publication number Publication date
US20060060566A1 (en) 2006-03-23
WO2004008816A3 (fr) 2005-03-10
JP2005532694A (ja) 2005-10-27
FR2842388A1 (fr) 2004-01-16
EP1529305A2 (fr) 2005-05-11
WO2004008816A2 (fr) 2004-01-22
WO2004008816A8 (fr) 2004-05-27

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Legal Events

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CD Change of name or company name
TP Transmission of property
ST Notification of lapse

Effective date: 20120330