JP2005512814A - 少なくとも2つのレーザパルスの組によるメモリリンクの処理 - Google Patents

少なくとも2つのレーザパルスの組によるメモリリンクの処理 Download PDF

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Publication number
JP2005512814A
JP2005512814A JP2003553680A JP2003553680A JP2005512814A JP 2005512814 A JP2005512814 A JP 2005512814A JP 2003553680 A JP2003553680 A JP 2003553680A JP 2003553680 A JP2003553680 A JP 2003553680A JP 2005512814 A JP2005512814 A JP 2005512814A
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Prior art keywords
laser
laser output
link
pulse
period
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Pending
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JP2003553680A
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Japanese (ja)
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JP2005512814A5 (enExample
Inventor
サン ユンロン
ジェイ スウェンソン エドワード
エス ハリス リチャード
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エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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Publication of JP2005512814A publication Critical patent/JP2005512814A/ja
Publication of JP2005512814A5 publication Critical patent/JP2005512814A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Lasers (AREA)
  • Semiconductor Memories (AREA)
JP2003553680A 2001-12-17 2002-12-17 少なくとも2つのレーザパルスの組によるメモリリンクの処理 Pending JP2005512814A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34174401P 2001-12-17 2001-12-17
PCT/US2002/040410 WO2003052890A1 (en) 2001-12-17 2002-12-17 Processing a memory link with a set of at least two laser pulses

Publications (2)

Publication Number Publication Date
JP2005512814A true JP2005512814A (ja) 2005-05-12
JP2005512814A5 JP2005512814A5 (enExample) 2006-02-09

Family

ID=23338848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003553680A Pending JP2005512814A (ja) 2001-12-17 2002-12-17 少なくとも2つのレーザパルスの組によるメモリリンクの処理

Country Status (9)

Country Link
JP (1) JP2005512814A (enExample)
KR (1) KR20040073958A (enExample)
CN (1) CN1293682C (enExample)
AU (1) AU2002357300A1 (enExample)
CA (1) CA2436227A1 (enExample)
DE (1) DE10296468T5 (enExample)
GB (1) GB2390834B (enExample)
TW (1) TWI295491B (enExample)
WO (1) WO2003052890A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007100176A1 (en) * 2006-03-02 2007-09-07 Korea Research Institute Of Standards And Science Laser processing method and processing apparatus based on conventional laser-induced material changes
JP2010515577A (ja) * 2007-01-05 2010-05-13 ジーエスアイ・グループ・コーポレーション マルチパルス・レーザー加工のためのシステム及び方法
JP2013099784A (ja) * 2007-03-16 2013-05-23 Electro Scientific Industries Inc 予測的パルストリガーの使用によるリンク加工における精度の向上

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723642B2 (en) 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US7671295B2 (en) 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US6777645B2 (en) 2001-03-29 2004-08-17 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field
US6947454B2 (en) * 2003-06-30 2005-09-20 Electro Scientific Industries, Inc. Laser pulse picking employing controlled AOM loading
US7616669B2 (en) 2003-06-30 2009-11-10 Electro Scientific Industries, Inc. High energy pulse suppression method
US20060000814A1 (en) 2004-06-30 2006-01-05 Bo Gu Laser-based method and system for processing targeted surface material and article produced thereby
DE602006004913D1 (de) 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
US10307862B2 (en) * 2009-03-27 2019-06-04 Electro Scientific Industries, Inc Laser micromachining with tailored bursts of short laser pulses
JP6087916B2 (ja) 2011-07-05 2017-03-01 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 使用中の音響光学ビーム偏向器および音響光学変調器の温度安定性を実現するためのシステムならびに方法
DE102018200811B4 (de) * 2018-01-18 2020-02-20 Trumpf Laser Gmbh Verfahren und Lasersystem zum Erzeugen verstärkter Pulse on Demand-Ausgangslaserpulse
US20210305763A1 (en) * 2020-03-24 2021-09-30 David Stucker Composite fiber laser assembly
US12489269B2 (en) 2020-03-24 2025-12-02 Photon Prime Incorporated Composite fiber laser assembly
KR102497645B1 (ko) * 2021-06-23 2023-02-08 인하대학교 산학협력단 금형 표면 레이저 가공하는 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150322B2 (ja) * 1990-05-18 2001-03-26 株式会社日立製作所 レーザによる配線切断加工方法及びレーザ加工装置
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5742634A (en) * 1994-08-24 1998-04-21 Imar Technology Co. Picosecond laser
US5720894A (en) * 1996-01-11 1998-02-24 The Regents Of The University Of California Ultrashort pulse high repetition rate laser system for biological tissue processing
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007100176A1 (en) * 2006-03-02 2007-09-07 Korea Research Institute Of Standards And Science Laser processing method and processing apparatus based on conventional laser-induced material changes
KR100795526B1 (ko) * 2006-03-02 2008-01-16 한국표준과학연구원 물질상태변이 유발을 통한 레이저 가공방법 및 가공장치
JP2009528170A (ja) * 2006-03-02 2009-08-06 コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス 物質状態変移の誘発を通じてのレーザー加工方法及び加工装置
JP2010515577A (ja) * 2007-01-05 2010-05-13 ジーエスアイ・グループ・コーポレーション マルチパルス・レーザー加工のためのシステム及び方法
JP2013099784A (ja) * 2007-03-16 2013-05-23 Electro Scientific Industries Inc 予測的パルストリガーの使用によるリンク加工における精度の向上

Also Published As

Publication number Publication date
CN1491467A (zh) 2004-04-21
AU2002357300A8 (en) 2003-06-30
GB2390834A (en) 2004-01-21
CA2436227A1 (en) 2003-06-26
WO2003052890B1 (en) 2003-09-04
GB2390834B (en) 2005-01-12
GB0317976D0 (en) 2003-09-03
AU2002357300A1 (en) 2003-06-30
WO2003052890A1 (en) 2003-06-26
KR20040073958A (ko) 2004-08-21
TW200304205A (en) 2003-09-16
DE10296468T5 (de) 2004-04-22
CN1293682C (zh) 2007-01-03
TWI295491B (en) 2008-04-01

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