DE10296468T5 - Bearbeitung einer Speicherverbindungsleitung mit einer Gruppe von mindestens zwei Laserimpulsen - Google Patents

Bearbeitung einer Speicherverbindungsleitung mit einer Gruppe von mindestens zwei Laserimpulsen Download PDF

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Publication number
DE10296468T5
DE10296468T5 DE10296468T DE10296468T DE10296468T5 DE 10296468 T5 DE10296468 T5 DE 10296468T5 DE 10296468 T DE10296468 T DE 10296468T DE 10296468 T DE10296468 T DE 10296468T DE 10296468 T5 DE10296468 T5 DE 10296468T5
Authority
DE
Germany
Prior art keywords
laser
laser output
electrically conductive
output pulses
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10296468T
Other languages
German (de)
English (en)
Inventor
Yunlong Beaverton Sun
Edward J. Portland Swenson
Richard S. Portland Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Electro Scientific Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scientific Industries Inc filed Critical Electro Scientific Industries Inc
Publication of DE10296468T5 publication Critical patent/DE10296468T5/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Lasers (AREA)
  • Semiconductor Memories (AREA)
DE10296468T 2001-12-17 2002-12-17 Bearbeitung einer Speicherverbindungsleitung mit einer Gruppe von mindestens zwei Laserimpulsen Withdrawn DE10296468T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US34174401P 2001-12-17 2001-12-17
US60/341,744 2001-12-17
PCT/US2002/040410 WO2003052890A1 (en) 2001-12-17 2002-12-17 Processing a memory link with a set of at least two laser pulses

Publications (1)

Publication Number Publication Date
DE10296468T5 true DE10296468T5 (de) 2004-04-22

Family

ID=23338848

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10296468T Withdrawn DE10296468T5 (de) 2001-12-17 2002-12-17 Bearbeitung einer Speicherverbindungsleitung mit einer Gruppe von mindestens zwei Laserimpulsen

Country Status (9)

Country Link
JP (1) JP2005512814A (enExample)
KR (1) KR20040073958A (enExample)
CN (1) CN1293682C (enExample)
AU (1) AU2002357300A1 (enExample)
CA (1) CA2436227A1 (enExample)
DE (1) DE10296468T5 (enExample)
GB (1) GB2390834B (enExample)
TW (1) TWI295491B (enExample)
WO (1) WO2003052890A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723642B2 (en) 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US7671295B2 (en) 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US6777645B2 (en) 2001-03-29 2004-08-17 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field
US6947454B2 (en) * 2003-06-30 2005-09-20 Electro Scientific Industries, Inc. Laser pulse picking employing controlled AOM loading
US7616669B2 (en) 2003-06-30 2009-11-10 Electro Scientific Industries, Inc. High energy pulse suppression method
US20060000814A1 (en) 2004-06-30 2006-01-05 Bo Gu Laser-based method and system for processing targeted surface material and article produced thereby
DE602006004913D1 (de) 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
KR100795526B1 (ko) * 2006-03-02 2008-01-16 한국표준과학연구원 물질상태변이 유발을 통한 레이저 가공방법 및 가공장치
US8367968B2 (en) * 2007-01-05 2013-02-05 Gsi Group Corporation System and method for multi-pulse laser processing
US8278595B2 (en) * 2007-03-16 2012-10-02 Electro Scientific Industries, Inc. Use of predictive pulse triggering to improve accuracy in link processing
US10307862B2 (en) * 2009-03-27 2019-06-04 Electro Scientific Industries, Inc Laser micromachining with tailored bursts of short laser pulses
JP6087916B2 (ja) 2011-07-05 2017-03-01 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 使用中の音響光学ビーム偏向器および音響光学変調器の温度安定性を実現するためのシステムならびに方法
DE102018200811B4 (de) * 2018-01-18 2020-02-20 Trumpf Laser Gmbh Verfahren und Lasersystem zum Erzeugen verstärkter Pulse on Demand-Ausgangslaserpulse
US20210305763A1 (en) * 2020-03-24 2021-09-30 David Stucker Composite fiber laser assembly
US12489269B2 (en) 2020-03-24 2025-12-02 Photon Prime Incorporated Composite fiber laser assembly
KR102497645B1 (ko) * 2021-06-23 2023-02-08 인하대학교 산학협력단 금형 표면 레이저 가공하는 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150322B2 (ja) * 1990-05-18 2001-03-26 株式会社日立製作所 レーザによる配線切断加工方法及びレーザ加工装置
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5742634A (en) * 1994-08-24 1998-04-21 Imar Technology Co. Picosecond laser
US5720894A (en) * 1996-01-11 1998-02-24 The Regents Of The University Of California Ultrashort pulse high repetition rate laser system for biological tissue processing
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material

Also Published As

Publication number Publication date
CN1491467A (zh) 2004-04-21
AU2002357300A8 (en) 2003-06-30
GB2390834A (en) 2004-01-21
CA2436227A1 (en) 2003-06-26
WO2003052890B1 (en) 2003-09-04
GB2390834B (en) 2005-01-12
JP2005512814A (ja) 2005-05-12
GB0317976D0 (en) 2003-09-03
AU2002357300A1 (en) 2003-06-30
WO2003052890A1 (en) 2003-06-26
KR20040073958A (ko) 2004-08-21
TW200304205A (en) 2003-09-16
CN1293682C (zh) 2007-01-03
TWI295491B (en) 2008-04-01

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination