JP2005508569A5 - - Google Patents

Download PDF

Info

Publication number
JP2005508569A5
JP2005508569A5 JP2002580415A JP2002580415A JP2005508569A5 JP 2005508569 A5 JP2005508569 A5 JP 2005508569A5 JP 2002580415 A JP2002580415 A JP 2002580415A JP 2002580415 A JP2002580415 A JP 2002580415A JP 2005508569 A5 JP2005508569 A5 JP 2005508569A5
Authority
JP
Japan
Prior art keywords
thin film
doped
substrate
dopant
cdo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002580415A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005508569A (ja
Filing date
Publication date
Priority claimed from US10/112,465 external-priority patent/US6761986B2/en
Application filed filed Critical
Publication of JP2005508569A publication Critical patent/JP2005508569A/ja
Publication of JP2005508569A5 publication Critical patent/JP2005508569A5/ja
Withdrawn legal-status Critical Current

Links

Images

JP2002580415A 2001-04-06 2002-04-03 薄膜赤外線透過性導体 Withdrawn JP2005508569A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28233701P 2001-04-06 2001-04-06
US10/112,465 US6761986B2 (en) 2001-04-06 2002-03-29 Thin film infrared transparent conductor
PCT/US2002/010651 WO2002082557A1 (en) 2001-04-06 2002-04-03 Thin film infrared transparent conductor

Publications (2)

Publication Number Publication Date
JP2005508569A JP2005508569A (ja) 2005-03-31
JP2005508569A5 true JP2005508569A5 (https=) 2005-12-22

Family

ID=26809973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002580415A Withdrawn JP2005508569A (ja) 2001-04-06 2002-04-03 薄膜赤外線透過性導体

Country Status (4)

Country Link
US (2) US6761986B2 (https=)
EP (1) EP1374316A1 (https=)
JP (1) JP2005508569A (https=)
WO (1) WO2002082557A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6761986B2 (en) * 2001-04-06 2004-07-13 Rockwell Scientific Licensing, Llc Thin film infrared transparent conductor
JP2004356623A (ja) * 2003-05-08 2004-12-16 Canon Inc 積層型光起電力素子及びその製造方法
US6979582B2 (en) * 2003-09-22 2005-12-27 National Chung-Hsing University Vertical-cavity surface emitting laser diode and method for producing the same
US7531239B2 (en) * 2005-04-06 2009-05-12 Eclipse Energy Systems Inc Transparent electrode
US20080003422A1 (en) * 2005-07-27 2008-01-03 Sumitomo Chemical Company, Limited Polymer Compound, Polymer Thin Film and Polymer Thin Film Device Using the Same
WO2007025209A2 (en) * 2005-08-25 2007-03-01 Andreas Eriksson Systems and methods of implementing a single-number follow me service for videoconferencing
EP1944807A1 (en) * 2007-01-12 2008-07-16 STMicroelectronics (Research & Development) Limited Electromagnetic interference shielding for image sensor
WO2008143232A1 (ja) * 2007-05-22 2008-11-27 Nippon Electric Glass Co., Ltd. 透明電極
US7917255B1 (en) 2007-09-18 2011-03-29 Rockwell Colllins, Inc. System and method for on-board adaptive characterization of aircraft turbulence susceptibility as a function of radar observables
ATE498911T1 (de) * 2008-06-10 2011-03-15 Inst Ciencies Fotoniques Fundacio Privada Verfahren zur herstellung einer stabilen durchsichtigen elektrode
ATE537277T1 (de) * 2008-08-25 2011-12-15 Solmates Bv Verfahren zur abscheidung eines materials
JP2014519621A (ja) * 2011-05-13 2014-08-14 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 焦点調節ルミネッセンス集光器および熱照射集光器
US20140053895A1 (en) * 2012-08-24 2014-02-27 Rosestreet Labs, Llc Intentionally-doped cadmium oxide layer for solar cells
CN107272199B (zh) * 2013-11-27 2023-04-07 奇跃公司 虚拟和增强现实系统与方法
US10444409B2 (en) * 2017-08-18 2019-10-15 Goodrich Corporation MWIR/LWIR transparent, conductive coatings
CN108616031A (zh) * 2018-04-20 2018-10-02 长春理工大学 一种含取向膜的单偏振可调谐半导体激光器及其制备方法
CN115443421B (zh) * 2020-05-20 2023-10-27 Hrl实验室有限责任公司 固态电动可变焦距透镜
US11788183B2 (en) 2020-05-20 2023-10-17 Hrl Laboratories, Llc Method for growing crystalline optical films on Si substrates which may optionally have an extremely small optical loss in the infra-red spectrum with hydrogenation of the crystalline optical films
US11988907B1 (en) 2020-05-20 2024-05-21 Hrl Laboratories, Llc Electric field-tunable IR devices with very large modulation of refractive index and methods to fabricate them
CN112968133A (zh) * 2021-01-31 2021-06-15 国家电网有限公司 太阳电池用CdO电子传输层的制备方法和薄膜太阳电池
US11422429B1 (en) * 2021-04-21 2022-08-23 Ii-Vi Delaware, Inc. Tunable optical wedge for beam steering
CN113233870B (zh) * 2021-04-25 2023-01-13 先导薄膜材料(广东)有限公司 一种掺杂氧化镉靶材及其制备方法与应用
CN114496353B (zh) * 2022-01-20 2024-03-26 汕头大学 高电导率、高透射率的透明导电薄膜及其制备方法和应用
CN118522782A (zh) * 2023-05-15 2024-08-20 隆基绿能科技股份有限公司 背面的透明导电薄膜及其制备方法和光伏器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397920A (en) 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
US6072117A (en) * 1996-02-27 2000-06-06 Canon Kabushiki Kaisha Photovoltaic device provided with an opaque substrate having a specific irregular surface structure
KR100374222B1 (ko) * 1997-12-24 2003-03-04 군제 가부시키가이샤 전자파 실드용 투명부재 및 그 제조방법
US6761986B2 (en) * 2001-04-06 2004-07-13 Rockwell Scientific Licensing, Llc Thin film infrared transparent conductor

Similar Documents

Publication Publication Date Title
JP2005508569A5 (https=)
Granqvist Transparent conductive electrodes for electrochromic devices: A review
EP3539166B1 (en) Quantum dots light emitting diode and fabricating method thereof, display panel and display apparatus
CN103579524B (zh) 透明传导氧化物薄膜基板、制造方法、有机发光装置和光电池
Wong et al. Flexible organic light-emitting device based on magnetron sputtered indium-tin-oxide on plastic substrate
KR101680928B1 (ko) 투명 전도성 산화물, 금속 및 산화물의 조합에 기초한 투명 전극
Shahbazi et al. Ag doping of organometal lead halide perovskites: morphology modification and p-type character
CN103443947A (zh) 透明导电膜、加热器、触摸面板、太阳能电池、有机el装置、液晶装置和电子纸
JP2011515866A (ja) 太陽光発電用基板
TW201131790A (en) Conductive metal oxide films and photovoltaic devices
JP2009057605A (ja) 酸化亜鉛薄膜、及びそれを用いた透明導電膜、及び表示素子
JP2005508569A (ja) 薄膜赤外線透過性導体
Ge et al. Efficient near‐infrared PbS quantum dot solar cells employing hydrogenated In2O3 transparent electrode
WO2016043084A1 (ja) 発光素子および発電素子
CN101816073B (zh) Cdte/cds薄膜太阳能电池中的非整流后接触的形成方法
CN101969101B (zh) 酞菁稀土类有机红外半导体光导型探测器
JP5732381B2 (ja) 積層体及びこれを用いた有機el素子、窓、太陽電池モジュール
JPH1012059A (ja) 透明導電膜の製造方法及びそれを用いた薄膜太陽電池
Yuanri et al. Deposition of transparent conducting indium tin oxide thin films by reactive ion plating
JP2000044238A (ja) 二酸化錫膜の製造方法および太陽電池
Niu et al. Spreadability of Ag layer on oxides and high performance of AZO/Ag/AZO sandwiched transparent conductive film
US20050205126A1 (en) Photovoltaic conversion device, its manufacturing method and solar energy system
Kuo et al. The Influences of Thickness on the Optical and Electrical Properties of Dual‐Ion‐Beam Sputtering‐Deposited Molybdenum‐Doped Zinc Oxide Layer
JP4397451B2 (ja) 透明導電性薄膜及びその製造方法
CN104851938A (zh) 制造具有厚度降低的p-掺杂CdTe层的太阳能电池的方法