JP2005508512A - フォトレジスト組成物 - Google Patents

フォトレジスト組成物 Download PDF

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Publication number
JP2005508512A
JP2005508512A JP2002575708A JP2002575708A JP2005508512A JP 2005508512 A JP2005508512 A JP 2005508512A JP 2002575708 A JP2002575708 A JP 2002575708A JP 2002575708 A JP2002575708 A JP 2002575708A JP 2005508512 A JP2005508512 A JP 2005508512A
Authority
JP
Japan
Prior art keywords
optionally substituted
carbon atoms
photoresist composition
ether bond
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002575708A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005508512A5 (enExample
Inventor
シュマンダ，チャールズ・アール
テイラー，ゲイリー・エヌ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2005508512A publication Critical patent/JP2005508512A/ja
Publication of JP2005508512A5 publication Critical patent/JP2005508512A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2002575708A 2001-03-22 2002-03-15 フォトレジスト組成物 Pending JP2005508512A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27786001P 2001-03-22 2001-03-22
PCT/US2002/007938 WO2002077712A2 (en) 2001-03-22 2002-03-15 Photoresist composition

Publications (2)

Publication Number Publication Date
JP2005508512A true JP2005508512A (ja) 2005-03-31
JP2005508512A5 JP2005508512A5 (enExample) 2005-12-22

Family

ID=23062664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002575708A Pending JP2005508512A (ja) 2001-03-22 2002-03-15 フォトレジスト組成物

Country Status (2)

Country Link
JP (1) JP2005508512A (enExample)
WO (1) WO2002077712A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163462B2 (en) 2008-06-19 2012-04-24 Renesas Electronics Corporation Photosensitive composition, method for forming pattern, and method for manufacturing semiconductor device
KR101834253B1 (ko) 2010-12-03 2018-03-06 삼성전자주식회사 막질 간 인터믹싱을 제어하는 ｄｐｔ 공정을 이용한 반도체 소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자
JP2021026053A (ja) * 2019-07-31 2021-02-22 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100955454B1 (ko) * 2002-05-31 2010-04-29 후지필름 가부시키가이샤 포지티브 레지스트 조성물
JP2006018193A (ja) * 2004-07-05 2006-01-19 Toyobo Co Ltd ポジ型感光性樹脂前駆体組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207261C2 (de) * 1992-03-07 2000-03-16 Clariant Gmbh Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR20020012206A (ko) * 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163462B2 (en) 2008-06-19 2012-04-24 Renesas Electronics Corporation Photosensitive composition, method for forming pattern, and method for manufacturing semiconductor device
KR101834253B1 (ko) 2010-12-03 2018-03-06 삼성전자주식회사 막질 간 인터믹싱을 제어하는 ｄｐｔ 공정을 이용한 반도체 소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자
JP2021026053A (ja) * 2019-07-31 2021-02-22 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法
JP7395278B2 (ja) 2019-07-31 2023-12-11 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法

Also Published As

Publication number Publication date
WO2002077712A2 (en) 2002-10-03
WO2002077712A3 (en) 2002-12-19

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