JP2005354580A - Imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging apparatus which can obtain a higher quality image. <P>SOLUTION: The imaging apparatus includes an imaging part which is provided with a plurality of pixels which creates information charge in response to light from outside, and a plurality of transfer electrodes 30 which extend to a crossing direction of a transfer direction of the information charge for each pixel; and stores and transfers the information charge generated in response to the input light to the pixels by an action of the transfer electrodes 30. The imaging apparatus makes a set of a predetermined number of each pixel group which continues along the transfer direction of the information charge, adds and composes the information charge stored in the pixel group that is made a set at the time of imaging, transfers the information charge by the action of the transfer electrodes installed in the set of the pixel group, and calculates a smear component added to the information charge when the information charge passes through every pixel group at the time of transfer based on the ratio of a transfer cycle T and an imaging period T<SB>s</SB>at the photographing time. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an imaging device that improves the quality of a captured image.

  FIG. 16 shows a configuration of an imaging apparatus 100 including a CCD solid-state imaging device. The imaging apparatus 100 includes a CCD solid-state imaging device 102, a timing control circuit 104, and a drive driver 106. The CCD solid-state imaging device 102 includes an imaging unit 2i, a storage unit 2s, a horizontal transfer unit 2h, and an output unit 2d. The timing control circuit 104 receives a clock pulse of a predetermined frequency and an external control signal, and generates a control signal for controlling imaging, vertical transfer, horizontal transfer, and output of the CCD solid-state image sensor 102. The control signal is input to the drive driver 106. The drive driver 106 receives a control signal from the timing control circuit 104, and outputs a clock pulse to each of the imaging unit 2i, the storage unit 2s, the horizontal transfer unit 2h, and the output unit 2d of the CCD solid-state imaging device 102 at a necessary timing. Output.

  The CCD solid-state imaging device 102 receives a clock from the drive driver 106 and performs imaging, vertical transfer, horizontal transfer, and output. In the imaging unit 2i, light receiving pixels are arranged in a matrix, and light incident on the imaging unit 2i is photoelectrically converted by the light receiving pixels constituting each bit to generate information charges. By applying the vertical transfer clock, the two-dimensional array of information charges generated in the imaging unit 2i is transferred to the storage unit 2s at high speed by the vertical shift register of the imaging unit 2i. As a result, the information charge for one frame is held in the vertical shift register of the storage unit 2s. Subsequently, the information charges are transferred from the storage unit 2s to the horizontal transfer unit 2h line by line. Furthermore, by applying a horizontal transfer clock, information charges are transferred from the horizontal transfer unit 2h to the output unit 2d in units of pixels. The output unit 2d converts the charge amount for each pixel into a voltage value, and the change in the voltage value is used as the output of the CCD.

The imaging unit 2i and the storage unit 2s are configured by a vertical shift register formed in the surface region of the semiconductor substrate, as shown in the plan view inside the element of FIG. The vertical shift register includes a plurality of channel regions 22 defined by separation regions 14 extending in parallel to each other in the vertical direction (the vertical direction in FIG. 17), and a plurality of transfer electrodes 24-1 intersecting the channel regions 22. To 24-3. In the conventional solid-state imaging device, a set of three adjacent transfer electrodes 24-1, 24-2, 24-3 constitutes one pixel. Information charges generated by the imaging unit 2i are transferred by applying transfer clocks φ _{1 to} φ ₃ having a predetermined cycle to each of the set of transfer electrodes 24-1, 24-2, 24-3. be able to.

  FIG. 18 shows the potential distribution in the N well 12 along the channel region 22 during imaging. At the time of imaging, one transfer electrode (for example, transfer electrode 24-2) of the set of transfer electrodes 24-1, 24-2, 24-3 is turned on, and the remaining transfer electrodes (for example, transfer electrodes) 24-1 and 24-3) are turned off to form the potential well 50 in the channel region 22 under the transfer electrode that is turned on. Information charges generated in each pixel are accumulated in the potential well 50.

At the time of transfer, as shown in FIG. 19, three-phase transfer clocks φ _{1 to} φ ₃ are applied for each combination of the three transfer electrodes 24-1, 24-2, 24-3 constituting one pixel, and the transfer electrodes Information charges are transferred by controlling the potential of the channel region 22 below 24-1, 24-2, 24-3.

  Further, in a CCD solid-state imaging device for a color image, as shown in FIG. 6, filters that transmit red (R) and filters that transmit green (G) are alternately arranged along the vertical transfer direction. A matrix-like pixel arrangement is obtained by alternately arranging columns and columns in which filters that transmit green (G) and filters that transmit blue (B) are alternately arranged in a direction crossing the vertical transfer direction. The color image can be acquired.

JP 2001-166284 A JP-A-6-112467

  However, in the conventional imaging apparatus and the control method thereof, information charges are sequentially sent out for each transfer electrode to perform transfer. As a result, the vertical transfer time becomes long, and there is a problem that a high-quality image cannot be obtained.

  For example, when the image pickup unit 2i is not provided with a mechanical shutter, or when shooting continuously without closing the shutter as in moving image shooting, the light is incident on each pixel of the image pickup unit 2i even during the period during which charges are transferred. Electric charges continue to be generated by the continued light. This electric charge causes noise called smear. The charge that causes noise is called smear charge. As the time for transferring information charges from the imaging unit 2i to the storage unit 2s becomes longer, the amount of smear charge increases, and the captured image remains as strong noise.

  Further, in the case where imaging is performed with only one of the pair of transfer electrodes being turned on in the imaging unit 2i, the amount of charge that can be accumulated in the potential well at the time of imaging is limited, and the imaging target having high luminance Sufficient sensitivity and dynamic range could not be obtained when receiving light from Furthermore, the amount of information charges generated during the imaging period may exceed the capacity of the potential well, and the dynamic range of the obtained image may be reduced.

  In view of the above problems, there is a need for a method capable of reducing smear when a mechanical shutter is not provided or when shooting a moving image and removing components due to smear charges from the obtained signal. At the same time, it is desirable to be able to sufficiently increase the dynamic range of the image.

  An object of the present invention is to provide an imaging device capable of obtaining a higher quality image in view of the above-described problems of the prior art.

The present invention includes a plurality of pixels that generate information charges by receiving light from the outside, and a plurality of transfer electrodes that extend in a direction that intersects the transfer direction of the information charges for each of the pixels, An imaging device including an imaging unit that accumulates and transfers information charges generated in response to light incident on the pixels by the action of the transfer electrode, and is a predetermined number of continuous units along the information charge transfer direction. For each group of pixels, information charges are accumulated in a potential well formed in a plurality of pixels substantially separated from each other included in the set of pixel groups at the time of imaging. The information charges accumulated in the pixel groups are added and synthesized, and among the transfer electrodes included in the group of pixels, a clock having substantially the same phase is applied to a plurality of transfer electrodes continuous along the information charge transfer direction. Applying a pulse The information charges are transferred, and smear components added to the information charges when passing through the pixel groups that are set at the time of transfer are transferred, and information charges pass through the pixel groups that are set at the time of transfer. and calculating on the basis of the ratio of the transfer cycle T and imaging period T _s during the imaging to be.

前記画素群Ｄ（２ｎ＋２，ｙ）から転送されてくる情報電荷Ｑ（２ｎ＋２，ｙ）に重畳されるスミア成分ΔＱ（２ｎ＋２，ｙ）を、

（但し、ΔＱ（１，ｙ）＝ΔＱ（２，ｙ）＝０）として算出する処理を行うことを特徴とする撮像装置である。 More specifically, a plurality of pixels that generate information charges by receiving light from the outside, and a plurality of transfer electrodes that extend in a direction that intersects the information charge transfer direction for each pixel. An image pickup apparatus including an image pickup unit in which the pixels are arranged in a matrix and stores and transfers information charges generated in response to light incident on the pixels by the action of the transfer electrodes. A plurality of pixels that are continuous along the direction are defined as a pixel group D (x, y) (where row x and column y are integers of 1 or more), and are included in the pixel group D (x, y) at the time of imaging. Information charges are accumulated in the potential well formed in the pixel, and at the time of transfer, the information charge accumulated in the pixel group D (x, y) is added and synthesized as information charge Q (x, y), and the pixel group How to transfer information charge among transfer electrodes of D (x, y) Are transferred by applying substantially in-phase clock pulses to a plurality of transfer electrodes continuous along the line N, and when n is an integer of 1 or more, each pixel group D (x, y) is information at the time of transfer. Based on the transfer cycle T through which charge passes, the imaging period T _s at the time of imaging, the number of effective electrodes N _eff at the time of imaging, and the number of pixel groups N _p to be paired, the pixel group D (2n + 1, The smear component ΔQ (2n + 1, y) superimposed on the information charge Q (2n + 1, y) transferred from y) is

A smear component ΔQ (2n + 2, y) superimposed on the information charge Q (2n + 2, y) transferred from the pixel group D (2n + 2, y) is

(Note that the imaging apparatus performs a process of calculating as ΔQ (1, y) = ΔQ (2, y) = 0).

（但し、ΔＱ（１，ｙ）＝０）として算出する処理を行うことを特徴とする撮像装置である。 In another aspect, a plurality of pixels that generate information charges by receiving light from the outside, and a plurality of transfer electrodes that extend in a direction that intersects the information charge transfer direction for each of the pixels, An imaging unit, wherein the pixels are arranged in a matrix, the information charges generated in response to light incident on the pixels are accumulated by the action of the transfer electrodes, and transferred to an area where light from outside is blocked And a plurality of pixels continuous along the information charge transfer direction as a pixel group D (x, y) (where x and y are integers of 1 or more) Information charges are accumulated in the potential wells formed in the pixels included in the group D (x, y), and the information charges accumulated in the pixel group D (x, y) are transferred to the information charges Q (x, y) at the time of transfer. ), And the pixel group D (x, y) is provided. Transfer is performed by applying substantially in-phase clock pulses to a plurality of transfer electrodes that are continuous along the transfer direction of information charges among the transmission electrodes, and each pixel at the time of transfer when n is an integer of 2 or more Based on the transfer cycle T in which information charges pass through the group D (x, y), the imaging period T _s at the time of imaging, the number of effective electrodes N _eff at the time of imaging, and the number of pixel groups N _p that form a group The smear component ΔQ (n, y) superimposed on the information charge Q (n, y) transferred from the pixel group D (n, y) is

(Note that the imaging apparatus performs processing that calculates as ΔQ (1, y) = 0).

  Here, in an imaging apparatus that performs color imaging, the pixels are a plurality of pixels that generate information charges in response to one of two or more different wavelength regions, and pixels corresponding to the two wavelength regions are transferred. The pixel group D (x, y) is arranged in a matrix so as to repeat alternately along the direction, and the pixel group D (x, y) is taken as one set for every three pixels that are continuous along the information charge transfer direction. , Y), it is preferable to store information charges in a potential well formed in pixels corresponding to the same wavelength region.

  It is also preferable to accumulate information charges by forming potential wells for different imaging periods for at least two pixels included in each of the pixel groups D (x, y) during imaging. This makes it possible to estimate an ideal amount of information charge even when potential well overflow occurs during imaging.

  According to the present invention, a high-quality image can be obtained in an imaging apparatus including a CCD solid-state imaging device. For example, the sensitivity and dynamic range during imaging can be increased. Further, it is possible to suppress smear generated during transfer and to remove smear components superimposed on the output signal.

  As shown in FIG. 1, the imaging apparatus 200 according to the embodiment of the present invention includes a CCD solid-state imaging device 202, a timing control circuit 204, a drive driver 206, and an output signal processing unit 208.

  The CCD solid-state imaging device 202 includes an imaging unit 2i, a storage unit 2s, a horizontal transfer unit 2h, and an output unit 2d. The timing control circuit 204 receives a clock pulse of a predetermined frequency and an external control signal, and generates a control signal for controlling imaging, vertical transfer, horizontal transfer, and output of the CCD solid-state imaging device 202. These control signals are input from the timing control circuit 204 to the drive driver 206. The drive driver 206 receives a control signal from the timing control circuit 204, and sends clock pulses to the image pickup unit 2i, storage unit 2s, horizontal transfer unit 2h, and output unit 2d of the CCD solid-state image pickup device 202 at necessary timings. Output. The output signal processing unit 208 performs processing such as smear removal on the output signal of the CCD solid-state imaging device 202 output from the output unit 2d, and then outputs the output signal to the outside of the apparatus.

  The imaging unit 2i and the storage unit 2s, as in the prior art, are configured by a vertical shift composed of a plurality of channel regions extending in parallel to each other in the vertical direction (vertical direction in FIG. 1) and a plurality of transfer electrodes intersecting with the channel regions. Each bit of each shift register functions as one of light receiving pixels arranged as a two-dimensional matrix.

  As shown in FIGS. 2 to 4, the imaging unit 2 i includes a plurality of shift registers formed in the surface region of the semiconductor substrate 10. FIG. 2 is a schematic plan view showing a part of the imaging unit 2i, and FIGS. 3 and 4 are side sectional views taken along lines CC and DD in FIG. 2, respectively.

  As shown in FIGS. 3 and 4, the imaging unit 2 i in the present embodiment has the same cross-sectional structure as the imaging unit in the conventional imaging device. That is, a P-well (PW) 11 is formed in an N-type semiconductor substrate 9, an N-well 12 is formed thereon, and an N-well in which N-type impurities are added to the surface region of the P-well 11 at a high concentration. 12 is formed. Further, isolation regions 14 made of P-type impurity regions are formed in the N well 12 in parallel with each other at a predetermined interval. The isolation region 14 forms a potential barrier between adjacent channel regions, and a region sandwiched between the isolation regions 14 is electrically partitioned to become a channel region 22 that is a transfer path of information charges.

  An insulating film 13 is formed on the surface of the semiconductor substrate 9. As shown in FIG. 2, a plurality of transfer electrodes 30 (30-1 to 30-9) made of a polysilicon film or the like are parallel to each other so as to be orthogonal to the extending direction of the channel region 22 with the insulating film 13 interposed therebetween. Repeatedly placed.

  In the present embodiment, an imaging apparatus 200 that captures a color image will be described. The imaging apparatus 200 that captures a color image has a matrix pixel arrangement in which pixels that accumulate information charges generated in response to wavelength components of different colors are repeatedly arranged at a predetermined period. For example, as shown in FIG. 5, a filter 32-R that transmits red (R) and a filter 32-G that transmits green (G) each including three transfer electrodes that are continuous in the vertical transfer direction as a set, Are arranged in the vertical transfer direction. The row 34-1 is alternately arranged, and the row 34-2 is alternately arranged with the filter 32-B that transmits blue (B) and the filter 32-G that transmits green (G). Are alternately arranged in the direction intersecting As a result, as shown in FIG. 6, a pixel array is formed in which R, G, and B pixels each controlled by a plurality of electrodes (here, three) are arranged in a matrix.

  In the present embodiment, one set of pixel groups included in a cycle obtained by adding one pixel to the cycle in which pixels corresponding to the same wavelength region (color) are arranged along the transfer direction is included in one set. Control is accomplished by supplying different clock pulses to each of the electrodes. For example, in the pixel arrangement of FIG. 5, pixels corresponding to the wavelength region of the same color (R, G, B) are arranged in a two-pixel cycle along the transfer direction, so 2 pixels + 1 pixel = The transfer electrodes for three pixels are controlled as one set. That is, nine transfer electrodes 30-1 to 30-9 continuous along the transfer direction are set as one set, and different clock pulses are supplied to each of the transfer electrodes 30-1 to 30-9 in the transfer direction. The imaging and transfer in the imaging unit 2i are controlled by independently controlling each of the transfer electrodes 30-1 to 30-9 arranged in three pixels that are continuous along.

Imaging (accumulation of information charges) and transfer of information charges in the imaging apparatus 200 can be performed by controlling the voltage applied to the transfer electrodes 30-1 to 30-9 using the timing control circuit 204. FIG. 7 shows a timing chart from imaging to transfer, and the control of the transfer electrode will be described. Further, in FIG. 8 shows a change of the potential in each transfer electrode 30-1～30-9 lower at time T ₁ through T _7. The horizontal axis indicates the position along the transfer direction in the imaging unit 2i, and the vertical axis indicates the potential at each position. At this time, the lower side in the figure is the positive potential side and the upper side is the negative potential side.

In response to the control signal from the timing control circuit 204, the drive driver 206 applies clock pulses φ _{1 to} φ ₉ to the transfer electrodes 30-1 to 30-9, respectively. The N-type semiconductor substrate (N-SUB) 10 of the CCD solid-state imaging device 202 is fixed to the substrate potential _Vsub .

Time T ₀ is an initial state before imaging. At this time, all of the clock pulses φ _{1 to} φ ₉ are turned off, and no potential well is formed under the transfer electrodes 30-1 to 30-9 as shown in FIG. Is done.

At time T ₁ , the clock pulse is controlled so that potential wells are formed in the pixels at both ends of the pixel group made into one set. Here, clock pulses φ ₂ and φ ₈ are turned on, and potential wells substantially separated from each other are formed under the transfer electrodes 30-2 and 30-8. Information charges generated in response to light incident around the transfer electrodes 30-2 and 30-8 that are turned on are accumulated in these potential wells.

  In the present embodiment, the clock pulse to the transfer electrode is controlled as a set of pixels each having a period obtained by adding one pixel to the period in which pixels corresponding to the same wavelength region are arranged along the transfer direction. In one set of pixels, information charges generated corresponding to the same wavelength component are accumulated. For example, in the row 34-1 of the CCD solid-state imaging device 202 shown in FIG. 5, as shown in FIG. 8, a set of R, G, R and a set of G, R, G are repeatedly arranged from the left. In the set of G, R and G, the information charges generated according to the red wavelength component are accumulated in the pixels corresponding to R at both ends, and in the set of G, R and G, the green wavelength component is stored in the pixels corresponding to G at both ends. The information charge generated in response to is stored. The same applies to the other columns.

Here, the pixels other than both ends are controlled so that the information charges are always discharged to the substrate 10 at the time of imaging by keeping the clock pulse off. However, the present invention is not limited to this. For example, as shown in FIG. 9, at time S ₀ , the clock pulse φ ₅ is temporarily turned on together with the clock pulses φ ₂ and φ ₈ to accumulate information charges, and at time S ₁ when imaging is completed, the clock pulse φ ₅ is turned off. The electronic shutter operation may be performed by returning the information charge and discharging the information charge.

At times T ₂ and T ₃ , the information charges are rearranged. In one set of pixel groups, information charges accumulated in the potential wells of the pixels at both ends are collected into one potential well. At time T ₂ , clock pulses φ _{3 to} φ ₇ are turned on in addition to clock pulses φ ₂ and φ ₈ , and information charges accumulated in the potential wells under the transfer electrodes 30-2 and 30-8 are added. Synthesized. Subsequently, at time T ₃ , the clock pulses φ ₂ , φ ₃ , φ ₇ , and φ ₈ are turned off, and information charges are rearranged in the potential well formed below the transfer electrodes 30-4 to 30-6. The

  As described above, the information charges accumulated in at least two or more pixels of a set of pixel groups at the time of imaging are combined into one potential well by rearrangement, thereby increasing the sensitivity and dynamic range at the time of imaging. Can do.

After time T ₄ , information charges collected in one potential well are transferred to one set of pixel groups. At this time, transfer is performed by supplying in-phase clock pulses to at least two transfer electrodes that are continuous in the transfer direction. Here, the transfer is performed by supplying clock pulses having the same phase to each set of three transfer electrodes arranged in each pixel.

For example, in the CCD solid-state imaging device 202 shown in FIG. 5, as shown in FIG. 7, a set of clock pulses φ _{1 to} φ ₃ , φ _{4 to} φ ₆ , and φ _{7 to} φ ₉ are driven in the same phase. As shown in FIG. 8, information charges are sequentially transferred using a group of transfer electrodes 30-1 to 30-3, 30-4 to 30-6, and 30-7 to 30-9 arranged in succession as one transfer unit. Transferred.

Specifically, as shown in FIG. 7, the clock pulses phi ₁ to [phi] ₃ at the time T ₄ is turned off, the clock pulse phi ₄ to [phi] ₉ is turned on, the clock pulses phi ₁ to [phi] ₆ at time T ₅ is Off, clock pulses φ _{7 to} φ ₉ are turned on. As a result, as shown in FIG. 8, the information charges accumulated in the potential well formed under the transfer electrodes 30-4 to 30-6 are newly formed under the transfer electrodes 30-7 to 30-9. Transferred to a potential well. At time T ₆ , clock pulses φ _{4 to} φ ₆ are turned off and clock pulses φ _{1 to} φ ₃ and φ _{7 to} φ ₉ are turned on. At time T ₇ , clock pulses φ _{4 to} φ ₉ are turned off and clock pulse φ ₁ ~φ ₃ is turned on. As a result, as shown in FIG. 8, information charges accumulated in the potential wells formed under the transfer electrodes 30-7 to 30-9 are newly formed under the transfer electrodes 30-1 to 30-3. Transferred to a potential well. Similarly, information charges can be sequentially transferred by applying in-phase clock pulses to each pair of transfer electrodes arranged in one pixel. The transfer is performed in the same manner for the other columns.

Although the case where the sets of clock pulses φ _{1 to} φ ₃ , φ _{4 to} φ ₆ , and φ _{7 to} φ ₉ are driven in the same phase is shown, it is sufficient that they are driven in the same phase. As shown, the clock pulses supplied to the transfer electrodes in each set may be delayed so that the potential varies smoothly along the transfer direction. By providing such a delay, information charges can be transferred smoothly.

  Thus, at the time of transfer, by controlling a plurality of transfer electrodes as a set, information charges can be transferred from the imaging unit 2i at high speed. As a result, it is possible to suppress smear that occurs during transfer. For example, when three transfer electrodes are collectively controlled as in this embodiment, transfer can be performed at a transfer rate about three times that of the conventional control method. A similar transfer method can be applied to the storage unit 2s.

  By increasing the transfer speed in this way, it is possible to reduce the occurrence of smear charges during transfer when a mechanical shutter is not provided or when shooting moving images, and an image signal with high image quality and high dynamic range is obtained. be able to.

  Furthermore, by applying the offset smear removal method, it is possible to remove components due to smear charges superimposed on information charges during transfer.

  FIG. 11 shows an enlarged plan view of a connection portion from the imaging unit 2i to the storage unit 2s. As shown in FIG. 11, pixels arranged in the order of R, G, R, G... From the side closer to the storage unit 2 s are arranged in the odd number column (2 μ−1), and the storage unit is arranged in the even number column (2 μ). Assume that pixels arranged in the order of G, B, G, B... From the side close to 2s are arranged. Here, it is assumed that μ is an integer of 1 or more.

  When the high-speed transfer control is applied to the pixel arrangement as shown in FIG. 11, in the odd-numbered column (2μ−1), the odd-numbered row (2λ−1) composed of a set of R, G, and R from the side close to the storage unit 2s. ), Even-numbered rows (2λ) made up of pairs of G, R, and G are alternately repeated, so that odd-numbered rows (2λ-1) made up of pairs of R, G, and R in odd-numbered columns (2μ-1) The pixel D (2λ-1, 2μ-1) is represented, and the even row (2λ) composed of a set of G, R, G in the odd column (2μ-1) is represented by the pixel D (2λ, 2μ-1). be able to. Similarly, in the even-numbered column (2μ), odd-numbered rows (2λ-1) composed of a set of G, B, G and even-numbered rows (2λ) composed of a set of B, G, B are alternately arranged from the side closer to the storage unit 2s. Since it is repeated, an odd row (2λ−1) consisting of a set of G, B, and G in the even column (2μ) is represented by a pixel group D (2λ-1, 2μ), and B in the even column (2μ). , G and B can be expressed by a pixel group D (2λ, 2μ). Here, it is assumed that λ is an integer of 1 or more. In the following description, an odd number column (2 μ−1) is described as an example, but the same processing can be performed in an even number column (2 μ).

  In the present embodiment, the smear charge removal process is performed by assuming that the charges generated in the same period are almost equal in pixels arranged spatially close to each other. In the following description, since the rearrangement period is actually a very short period, the amount of charge generated during this period can be ignored.

When the transfer of the information charge is started, the information charge Q (1, 2 μ−1) stored in the pixel group D (1, 2 μ−1) is immediately transferred to the storage unit 2 s. Therefore, the smear charges are sent to the storage section 2s with almost no superimposition on the information charges Q (1, 2 μ−1) stored in the pixel group D (1, 2 μ−1). Specifically, the information charge Q (1, 2 μ−1) transferred from the first pixel group D (1, 2 μ−1) to the storage unit 2 _s is generated in two R pixels during the imaging period T _s . It is assumed that the charge amount is equal to 2q (1, 2 μ−1). Further, the information charge Q (2, 2μ−1) accumulated in the second pixel group D (2, 2μ−1) is stored in the R included in the pixel group D (1, 2μ−1) in the transfer cycle T. The pixel, the G pixel, and the R pixel are sequentially transferred to reach the accumulation unit 2s. Here, if the smear charge accumulated when passing through the first pixel group D (1, 2 μ−1) is small and can be ignored, the charge generated in the two G pixels during the imaging period T _s. It is equal to the quantity 2q (2, 2μ-1).

  On the other hand, when the first pixel group D (1, 2 μ−1) and the second pixel group D (2, 2 μ−1) are combined, the included pixels are three R pixels and three G pixels. Therefore, when all the pixels are used effectively, the charge amount 2q corresponding to the red wavelength region is obtained from the first pixel group D (1, 2 μ−1) and the second pixel group D (2, 2 μ−1). Charge amount 3q (1,2μ-1) which is 3/2 times (1,2μ-1) and charge amount 3q, which is 3/2 times charge amount 2q (2,2μ-1) corresponding to the green wavelength region It can be said that (2, 2 μ−1) information charges should be transferred. The information charge amounts 3q (1, 2μ-1) and 3q (2, 2μ-1) are expressed by the formulas (1) and (2) from the information charges Q (1, 2μ-1) and Q (2, 2μ-1). Can be calculated approximately using.

  The information charges Q (3, 2 μ−1) transferred from the third pixel group D (3, 2 μ−1) are G pixels included in the pixel group D (2, 2 μ−1) every transfer cycle T. , R pixels, G pixels, and R pixels, G pixels, and R pixels included in the pixel group D (1, 2 μ−1) are sequentially transferred to reach the storage unit 2s. Therefore, the smear charge ΔQ (3, 2μ−1) corresponding to the time of the transfer cycle T when passing through each pixel group is superimposed on the information charge Q (2, 2μ−1).

  This smear charge ΔQ (3, 2 μ−1) is added to the total value of the information charge amounts 3 q (1, 2 μ−1) and 3 q (2, 2 μ−1), and the second pixel group D (2, 2 μ−). 1) and the ratio between the transfer period T and the imaging period Ts when passing through the first pixel group D (1, 2 μ−1), respectively. That is, it can be calculated by Equation (3).

  Accordingly, the smear component is removed by subtracting the smear charge ΔQ (3, 2μ−1) from the information charge Q (3, 2μ−1) transferred from the third pixel group D (3, 2μ−1). be able to.

  Further, the smear charge ΔQ (4, 2μ−1) superimposed on the information charge Q (4, 2μ−1) transferred from the fourth pixel group D (4, 2μ−1) is the third pixel. If the smear charge generated in the group D (3, 2 μ−1) is ignored, it can be similarly calculated by the equation (4). Accordingly, the smear component is removed by subtracting the smear charge ΔQ (4,2μ−1) from the information charge Q (4,2μ−1) transferred from the fourth pixel group D (4,2μ−1). be able to.

  Note that when the third pixel group D (3, 2 μ−1) and the fourth pixel group D (4, 2 μ−1) are grouped, these pixel groups include three R pixels and three G pixels. Therefore, when all the pixels are valid, 3q (3, 2 μ−1) corresponding to the red wavelength region is detected from the pixel groups D (3, 2 μ−1) and D (4, 2 μ−1). ) And 3q (4, 2 μ−1) information charges corresponding to the green wavelength region are transferred, and these values can be calculated using Equation (5).

  When the above relationship is generalized, sm is superimposed on the information charge Q (2n + 1, 2 μ−1) transferred from the 2n + 1 and subsequent pixel groups D (2n + 1, 2 μ−1), where n is an integer of 1 or more. The charge ΔQ (2n + 1, 2μ−1) is added to the smear charge ΔQ (2n−1, 2μ−1) by the 2n−1th pixel group D (2n−1, 2μ−1) and the 2nth pixel group D (2n , 2μ−1) is added to the smear component generated during the transfer period T passing through The smear charge generated in the transfer cycle T passing through the 2n-1th pixel group D (2n-1, 2μ-1) and the 2nth pixel group D (2n, 2μ-1) is a charge amount 3q (2n- 1, 2 μ−1) and the charge amount 3 q (2n, 2 μ−1), and the sum of the ratio of the transfer period T and the imaging period Ts. That is, it is computable by Numerical formula (6).

  Similarly, the smear charge ΔQ (2n + 2, 2μ−1) superimposed on the information charge Q (2n + 2, 2μ−1) transferred from the pixel group D (2n + 2, 2μ−1) is the smear charge ΔQ (2n, 2μ-1) is added with the smear charge generated in the transfer cycle T passing through the 2n-1th pixel group D (2n-1, 2μ-1) and the 2nth pixel group D (2n, 2μ-1). As a thing, it is computable by Numerical formula (7).

  Accordingly, the smear component is removed by subtracting the smear charge ΔQ (2n + 1, 2 μ−1) from the information charge Q (2 n + 1, 2 μ−1) transferred from the 2n + 1-th pixel group D (2n + 1, 2 μ−1). be able to. Further, the smear component is removed by subtracting the smear charge ΔQ (2n + 2, 2μ−1) from the information charge Q (2n + 2, 2μ−1) transferred from the 2n + 2nd pixel group D (2n + 2, 2μ−1). be able to. When the pixel group D (2n + 1, 2 μ−1) and the pixel group D (2 n + 2, 2 μ−1) are put together, if all the pixels are valid, 3q (2n + 1, 2 μ−1) is obtained from these pixel groups. ) And 3q (2n + 2, 2μ−1) information charges are transferred, and the values can be calculated using Equations (8) and (9).

  As described above, when high-speed transfer is performed by applying a clock pulse having the same phase to a plurality of transfer electrodes, a signal from which smear components are removed can be obtained by applying the offset smear removal method.

  Here, smear charges are calculated by collecting two sets of pixel groups. However, it is also preferable to perform processing assuming that the smear charges generated in each pixel included in one set of pixel groups are equal. A description will be given below.

  The smear charges are sent to the storage section 2s with almost no superimposition on the information charges Q (1, 2 μ−1) stored in the first pixel group D (1, 2 μ−1). The information charges Q (2, 2μ−1) accumulated in the second pixel group D (2, 2μ−1) are R pixels included in the pixel group D (1, 2μ−1) in the transfer cycle T, The G pixel and the R pixel are sequentially transferred to reach the storage unit 2s. The smear charges generated in the G pixels included in the first pixel group D (1, 2 μ−1) during this transfer period are very small, and are processed as being substantially equal to the smear charges generated in the other two R pixels. The effect is small even if it is performed. Therefore, the smear charge ΔQ (2, 2μ−1) superimposed on the information charge Q (2, 2μ−1) is calculated by Expression (10).

  The information charges Q (3, 2μ−1) accumulated in the third pixel group D (3, 2μ−1) are transferred to the pixel group D (2, 2μ−1) and the pixel group D (1) every transfer cycle T. , 2μ−1) are sequentially transferred to reach the storage unit 2s. Similarly, the smear charges generated in the R pixels included in the second pixel group D (2, 2 μ−1) during the transfer period are very small, and the smear charges generated in the other two G pixels are the same. Even if the processing is carried out on the assumption that they are almost equal, the effect is small. Therefore, the smear charge ΔQ (3, 2μ−1) superimposed on the information charge Q (3, 2μ−1) is calculated by Expression (11).

  These are generalized so that n is an integer of 2 or more and smear charge ΔQ (n, 2μ−1) superimposed on the information charge Q (n, 2μ−1) accumulated in the pixel group (n, 2μ−1). ) Can be calculated by Equation (12).

  Therefore, the influence of the smear component can be removed by subtracting the smear charge ΔQ (n, 2μ−1) from the information charge Q (n, 2μ−1).

  In the present embodiment, nine consecutive transfer electrodes 30-1 to 30-9 are taken as one set, and imaging is performed by supplying different clock pulses to each of the transfer electrodes 30-1 to 30-9. Although the imaging (accumulation of information charges) and the transfer of information charges are controlled in the section 2i, of course, as in the conventional case, the transfer electrodes 30-1 to 30-3, 30-4 to 30-6 corresponding to one pixel. Transfer electrodes 30-1, 30-4, 30-7, transfer electrodes 30-2, 30-5, 30-8 and transfer electrodes 30-3, 30-6, each including 30-7 to 30-9 as one set. 30-9 can be controlled by clock pulses having the same phase. In this way, by switching between a control with a set of transfer electrodes across a plurality of consecutive pixels and a control with a set of transfer electrodes corresponding to one pixel, low-speed high-speed transfer and high-resolution low-speed It is also possible to perform shooting and transfer by switching between transfer and transfer. In this case, the smear component can be removed by applying a conventional offset smear removing method.

  In addition, when a mechanical shutter is provided in the imaging unit 2i, when performing high-speed transfer with low resolution continuously like a moving image, it is possible to continuously perform imaging with the shutter opened. In such a case, the storage unit 2s need not have the same number of pixels as the imaging unit 2i as in the conventional case, and the storage unit 2s has a capacity capable of storing the storage pixels of the storage unit 2s and storing the added and combined information charges. It is also possible to arrange pixels having the same. For example, when information charges are accumulated together in the transfer direction in the image pickup unit 2i, the number of pixels along the transfer direction of the storage unit 2s can be reduced to 1/3 of the conventional one. Therefore, the number of pixels can be reduced as compared with the conventional storage unit 2s, and the configuration of the CCD solid-state imaging device 202 can be further downsized. In addition, the control of the transfer electrode of the storage unit 2s can be simplified. Note that, when shooting a high-resolution still image, imaging is performed in units of one pixel composed of three transfer electrodes as before, and the mechanical shutter is closed at the time when the imaging is completed, and the image is taken directly from the imaging unit 2i. It is also possible to obtain a high-resolution image by sequentially transferring information charges to the transfer unit 2h.

  In the above embodiment, the control is performed by supplying nine different clock pulses to the nine transfer electrodes. However, the present invention is not limited to this. For example, a more compressed image can be transferred at a higher speed by increasing the number of controllable clock pulses.

  Similarly to the present embodiment, smear removal processing can also be performed on an output signal (voltage value, etc.) from the CCD solid-state imaging device 202. That is, since the output signal of the CCD solid-state imaging device 202 is proportional to the information charge Q, a value obtained by multiplying the output signal by a predetermined coefficient may be processed as the information charge Q.

  In this embodiment, an imaging apparatus including a frame transfer type CCD solid-state imaging device is targeted. However, the scope of application of the present invention is not limited to this. For example, the present invention can also be applied to an imaging device including an interline CCD solid-state imaging device.

<Modification 1>
In addition, by applying the control of the imaging device in the above embodiment, when the potential well does not saturate even when strong light that generates information charges exceeding the saturation level of the potential well is incident during imaging. It is also possible to obtain an ideal information charge amount to be obtained.

FIG. 12 shows a timing chart at the time of imaging and rearrangement, and the control of the transfer electrode will be described. Further, in FIG. 13 shows a change of the potential in each transfer electrode 30-1～30-9 lower at time T ₁ through T _3. The horizontal axis indicates the position along the transfer direction in the imaging unit 2i, and the vertical axis indicates the potential at each position. At this time, the lower side in the figure is the positive potential side and the upper side is the negative potential side.

In response to the control signal from the timing control circuit 204, the drive driver 206 applies clock pulses φ _{1 to} φ ₉ to the transfer electrodes 30-1 to 30-9, respectively. The N-type semiconductor substrate (N-SUB) 10 of the CCD solid-state imaging device 202 is fixed to the substrate potential _Vsub .

At time T ₀ , all of the clock pulses φ _{1 to} φ ₉ are turned off, and no potential well is formed under the transfer electrodes 30-1 to 30-9 as shown in FIG. Is discharged. At time T ₁ , the clock pulse is controlled so that a potential well is formed in one pixel of a group of pixels. Here, only the clock pulse φ ₂ is turned on, and a potential well is formed under the transfer electrode 30-2. Information charges generated in response to light incident on the periphery of the transfer electrode 30-2 in the on state are accumulated in these potential wells. Next, at time T ₂ , the clock pulse is controlled so that potential wells are formed in the pixels at both ends of the pixel group made into one set. Here, in addition to the clock pulse φ ₂ , φ ₈ is turned on, and a potential well is formed under the transfer electrodes 30-2 and 30-8. Information charges generated in response to light incident around the transfer electrodes 30-2 and 30-8 in the on state are accumulated in these potential wells. At time T ₃ , information charges are rearranged. In the following, information charges can be transferred in the same manner as after time T ₄ in the above embodiment.

That is, during imaging, a potential well is formed under the transfer electrode 30-2 for an on-gate period T _H equal to the imaging period Ts, and under the transfer electrode 30-8 for only an on-gate period T _L shorter than the on-gate period T _H. A potential well is formed.

At this time, it is preferable that the timing control circuit 204 controls the on-gate periods T _H and T _L according to the maximum signal strength in the previous frame. Control is performed such that the smaller the maximum signal strength, the longer the off-gate period, and the larger the maximum signal strength, the longer the on-gate period. This is to control the imaging period by utilizing the fact that the maximum signal intensity included in continuously captured images does not tend to change greatly. When a long time has elapsed since the previous imaging or when it is desired to ensure a sufficient dynamic range, a maximum image intensity is detected by temporarily capturing and outputting an image of one frame, and the maximum signal It is preferable to perform actual imaging after setting the imaging period based on the intensity.

When the light incident on the pixel of the imaging unit 2i is weak, as shown in FIG. 14, the information charge (inclination of the line E in FIG. 14) accumulated in the potential well of each pixel per unit time becomes small. In such a case, the information charges Q _{H, total} and Q _{L, total} accumulated in the on-gate periods T _H and T _L are smaller than the saturation level Q _max of each potential well, so that a sufficient dynamic range can be secured. it can.

When the light incident on the pixel of the imaging unit 2i is strong, as shown in FIG. 15, the information charge accumulated in the pixel per unit time (the slope of the line F in FIG. 15) becomes large, and the long on-gate period T _H The information charge Q _{H, total} stored in the potential well under the transfer electrode 30-2 that is in the ON state only exceeds the saturation level of the potential well. On the other hand, the information charge Q _{L, total} stored in the potential well below the transfer electrode 30-7 that is in the on state only for a short on-gate period T _L does not exceed the saturation level of the potential well. Therefore, the output information charge amount Q _total which is the sum of the information charges Q _{H, total} and Q _{L, total} shows knee characteristics as shown by the line G in FIG.

When the light incident on the pixels of the imaging unit 2i is weak, the information charge amount Q _{H, total} accumulated in the long on-gate period T _H can be calculated from the output information charge amount Q _total by using Equation (13). . Similarly, short-gate period T _L in the information charges accumulated amount Q _{L, total} can be calculated from the output information charge amount Q _total using Equation (14). However, when the information charge amount Q _{H, total} calculated in this way is calculated as a value exceeding the saturation level Q _max , the information charge amount Q _{H, total} and the information charge amount Q _{L, total} are expressed by the formula (15 ) And (16) need to be recalculated. The saturation level Q _max in the imaging unit 2 i of the CCD solid-state imaging device 202 can be obtained in advance.

When the information charge amount Q _{L, total} accumulated in the short on-gate period T _L and the potential well has a sufficient capacity not to saturate, it is accumulated in the potential well for one pixel in the long on-gate period T _H. Rubeki ratio Q _L of the ideal information charges Q _{ideal, total} / Q _ideal becomes equal to the ratio T _L / T _H of the on-gate period. Therefore, the ideal information charge amount Q _ideal can be calculated based on Expressions (17) and (18).

At this time, the charge information after smear removal calculated in the above embodiment as the output information charge amount Q _total (for example, output information from the pixel group D (n, 2 μ−1) in n rows (2 μ−1) columns) By using the charge amount Q _total (n, 2 μ−1) = Q (n, 2 μ−1) −ΔQ (n, 2 μ−1)), the information charge is ideal after eliminating the effect of smear charges. Q _ideal can be obtained.

In this way, by checking the saturation level Q _max of the potential well per pixel (or the output signal value corresponding to the saturation level Q _max ) in advance, an ideal output information charge to be accumulated in the imaging period. The quantity Q _itotal can be determined.

Similar to the first modification, the ideal output signal S _ideal can be obtained from the output signal from the CCD solid-state imaging device 202. That is, the ideal output signal S _ideal since is a signal proportional to the information amount of charge Q _Itotal, it is possible to calculate the output signal S _ideal by applying a predetermined coefficient information charge amount Q _Itotal.

As described above, according to the present modification, even when the light incident on the pixels of the imaging unit 2i is strong by accumulating information charges in different on-gate periods T _H and T _L in one set of pixel groups, The correct information charge amount and output signal according to the light intensity can be obtained. Therefore, a sufficient dynamic range can be obtained in the image signal.

<Modification 2>
Furthermore, the modified example 1 can be combined with an offset smear removing method.

For example, during imaging, a potential well is formed under the transfer electrode 30-2 for an on-gate period T _H equal to the imaging period Ts, and under the transfer electrode 30-8, an on-gate period that is ¼ of the imaging period Ts. It is assumed that the potential well is formed by _TL, and the time required to pass through each pixel of one set of transfer electrodes 30-1 to 30-3, 30-4 to 30-6, and 30-7 to 30-9. Is the transfer time T.

At this time, the substantial imaging period in the transfer electrodes 30-1 to 30-9 is represented by T _H + T _L = Ts + Ts / 4 = 5Ts / 4. Therefore, the formulas (6), (7), and (12) can be modified to express the smear charge ΔQ (n, 2μ−1) by the formulas (19) to (21).

“Substantially effective number of electrodes N _eff at the time of imaging” is divided by the imaging period Ts, for the transfer electrodes 30-1 to 30-9, the integrated value of the substantial time that each electrode is turned on at the time of imaging. Define the value with Then, the substantial imaging period T _H + _TL can be expressed as the imaging period Ts × (the number of effective electrodes N _eff at the time of imaging). Therefore, when the formulas (19) to (21) are generalized as the number of pixel groups N _p included in the set of the transfer electrodes 30-1 to 30-9, they can be expressed by the formulas (22) to (24).

  Therefore, the influence of the smear component can be removed by subtracting the smear charge ΔQ (n, 2μ−1) from the information charge Q (n, 2μ−1).

As described above, according to this modification, when information charges are accumulated in different on-gate periods T _H and T _L in one set of pixel groups and the incident light is strong, the correct information charge amount according to the light intensity and Even in the case of obtaining the output signal, it is possible to obtain the correct information charge amount and output signal after removing the smear in advance by the offset smear removal method. Therefore, a sufficient dynamic range can be obtained more correctly in the image signal.

It is a block diagram which shows the structure of the imaging device in embodiment of this invention. It is a figure which shows the top view of the internal structure of the imaging part of the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows sectional drawing of the internal structure of the imaging part of the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows sectional drawing of the internal structure of the imaging part of the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows arrangement | positioning of the color filter of the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows the arrangement | sequence of the color filter of the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows the timing chart of the clock pulse supplied to the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows the state change of the potential under each transfer electrode in embodiment of this invention. It is a figure which shows another example of the timing chart of the clock pulse supplied to the CCD solid-state image sensor in embodiment of this invention. It is a figure which shows the state change of the potential under each transfer electrode of the CCD solid-state image sensor in embodiment of this invention. It is a figure explaining the method of the smear removal in embodiment of this invention. It is a figure which shows the timing chart of the clock pulse supplied to the CCD solid-state image sensor in the modification 1 of embodiment of this invention. It is a figure which shows the state change of the potential under each transfer electrode in the modification 1 of embodiment of this invention. It is a figure explaining the mode of accumulation | storage of the information charge in the imaging period in the modification 1 of embodiment of this invention. It is a figure explaining the mode of accumulation | storage of the information charge in the imaging period in the modification 1 of embodiment of this invention. It is a block diagram which shows the structure of the conventional imaging device. It is a figure which shows the top view of the internal structure of the imaging part of the conventional CCD solid-state image sensor. It is a figure explaining accumulation | storage of the information charge at the time of imaging. It is a figure which shows the timing chart of the clock pulse supplied to the transfer electrode at the time of the imaging in the conventional CCD solid-state image sensor, and transfer.

Explanation of symbols

  2d output unit, 2i imaging unit, 2h horizontal transfer unit, 2s storage unit, 9 semiconductor substrate, 10 semiconductor substrate (N-SUB), 11, 12 well, 13 insulating film, 14 isolation region, 22 channel region, 24 transfer electrode , 30 transfer electrode, 32 filter, 34 pixel row, 50 potential well, 100 imaging device, 102 CCD solid-state imaging device, 104 timing control circuit, 106 drive driver, 200 imaging device, 202 CCD solid-state imaging device, 204 timing control circuit 206 Drive driver, 208 Output signal processing unit.

Claims (5)

A plurality of pixels that generate information charges by receiving light from the outside;
A plurality of transfer electrodes extended in a direction crossing the information charge transfer direction for each pixel,
An imaging device including an imaging unit that accumulates and transfers information charges generated in response to light incident on the pixel by the action of the transfer electrode,
A set of a predetermined number of pixel groups that are continuous along the information charge transfer direction,
At the time of imaging, information charges are accumulated in a potential well formed in a plurality of pixels substantially separated from each other included in the set of pixels,
At the time of transfer, the information charges accumulated in the set of pixel groups are added and synthesized, and among the transfer electrodes included in the set of pixel groups, a plurality of transfer electrodes continuous in the information charge transfer direction are provided. Transferring information charges by applying substantially in-phase clock pulses,
The smear component added to the information charges when passing through each of the pixel groups that are set during the transfer is the transfer cycle T in which the information charges pass through each of the pixel groups that are set during the transfer and during the imaging. An imaging device that is calculated based on a ratio to the imaging period T _s . A plurality of pixels that receive light from the outside to generate information charges, and a plurality of transfer electrodes that extend in a direction that intersects the information charge transfer direction for each pixel,
An imaging device including an imaging unit in which the pixels are arranged in a matrix and stores and transfers information charges generated in response to light incident on the pixels by the action of the transfer electrodes,
A plurality of pixels that are continuous along the information charge transfer direction are defined as a pixel group D (x, y) (where row x and column y are integers of 1 or more),
At the time of imaging, information charges are accumulated in the potential wells formed in the pixels included in the pixel group D (x, y),
At the time of transfer, the information charges accumulated in the pixel group D (x, y) are added and synthesized as information charges Q (x, y), and the information charges out of the transfer electrodes provided in the pixel group D (x, y). Transfer by applying substantially in-phase clock pulses to a plurality of transfer electrodes that are continuous along the transfer direction of
When n is an integer of 1 or more,
The transfer cycle T in which information charges pass through each pixel group D (x, y) at the time of transfer, the imaging period T _s at the time of imaging, the number of effective electrodes N _eff at the time of imaging, and the number of pixel groups to be paired Based on N _p
A smear component ΔQ (2n + 1, y) superimposed on the information charge Q (2n + 1, y) transferred from the pixel group D (2n + 1, y) is

A smear component ΔQ (2n + 2, y) superimposed on the information charge Q (2n + 2, y) transferred from the pixel group D (2n + 2, y) is

(However, ΔQ (1, y) = ΔQ (2, y) = 0)
An imaging apparatus that performs a process of calculating as follows. A plurality of pixels that receive light from the outside to generate information charges, and a plurality of transfer electrodes that extend in a direction that intersects the information charge transfer direction for each pixel,
Including an imaging unit in which the pixels are arranged in a matrix, the information charges generated in response to the light incident on the pixels are accumulated by the action of the transfer electrodes, and transferred to an area where light from the outside is blocked An imaging device,
A plurality of pixels continuous along the information charge transfer direction is defined as a pixel group D (x, y) (where x and y are integers of 1 or more).
At the time of imaging, information charges are accumulated in the potential wells formed in the pixels included in the pixel group D (x, y),
At the time of transfer, the information charges accumulated in the pixel group D (x, y) are added and synthesized as information charges Q (x, y), and the information charges out of the transfer electrodes provided in the pixel group D (x, y). Transfer by applying substantially in-phase clock pulses to a plurality of transfer electrodes continuous along the transfer direction of
When n is an integer of 2 or more,
The transfer cycle T in which information charges pass through each pixel group D (x, y) during transfer, the imaging period T _s during imaging, the number of effective electrodes N _eff during imaging, and the number of pixel groups forming a set Based on N _p
A smear component ΔQ (n, y) superimposed on the information charge Q (n, y) transferred from the pixel group D (n, y) is

(However, ΔQ (1, y) = 0)
An imaging apparatus that performs a process of calculating as follows. In the imaging device according to claim 2 or 3,
The pixels are a plurality of pixels that generate information charges in response to one of two or more different wavelength regions, and are arranged in a matrix so that pixels corresponding to the two wavelength regions are alternately repeated along the transfer direction. And
The pixel group D (x, y) corresponds to the same wavelength region included in the pixel group D (x, y) at the time of imaging, with each set of three consecutive pixels along the information charge transfer direction as one set. An image pickup apparatus that stores information charges in a potential well formed in a pixel. The imaging apparatus according to claim 4,
An image pickup apparatus for storing information charges by forming a potential well for at least two pixels included in each of the pixel groups D (x, y) during different image pickup periods during image pickup.

Images