JP2005353773A - Wiring member and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a wiring member consisting of lamination, which solves a problem in productivity, and which is provided with a merit not existing in a conventional method. <P>SOLUTION: A four-laminated layer substrate is produced by laminating a supporting substrate or a first metal layer, a first insulating layer, a second insulating layer, and a second metal layer for forming a wiring unit sequentially. The substrate is employed as a starting material. A method for forming the wiring members so as to have a predetermined configuration respectively, includes processes for: working the first metal layer so as to have a predetermined configuration by photo etching method; working the second metal layer so as to have a predetermined configuration by photo etching method; working the first insulating layer so as to have a predetermined configuration by photo etching method; and working the second insulating layer so as to have a predetermined configuration by photo etching method by integrating with the first insulating layer are effected. In this case, etching in the first insulating layer etching working process and the etching in the second insulating layer etching working process are effected under different conditions, respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a wiring member used for various applications such as a semiconductor package and a head suspension assembly, and a method for manufacturing the same, and in particular, a first metal layer, a first insulating layer, The present invention relates to a method for manufacturing a wiring member in which each layer is processed into a predetermined shape using a four-layer laminated substrate in which an insulating layer and a second metal layer for forming a wiring portion are laminated as a starting material.

In recent years, for various purposes such as for semiconductor package interposers and head suspension assemblies, a support substrate made of a metal layer, an insulating layer, and a wiring layer are laminated in this order for each purpose, and each layer has a predetermined shape. A wiring member having an etched structure is used.
For example, Japanese Patent Laid-Open No. 2002-25026 (Patent Document 1) uses a laminated base material in which an insulating layer is disposed on a supporting base material made of a metal layer, and forms a wiring portion on the insulating layer by a semi-additive method. In addition, there is a description of a method for manufacturing a wiring member in which a metal layer is processed by a photoetching method and an insulating layer is processed by wet etching.
Here, as the insulating layer, an adhesive layer is provided on both surfaces of the core insulating layer, and both the core insulating layer and the adhesive layer are made of polyimide resin.
However, the wiring layer is formed by a semi-additive method, starting from a two-layer laminated substrate in which a supporting substrate made of a metal layer and an electrically insulating insulating layer are laminated. Therefore, it is inferior in productivity as compared with the wiring formation by the subtrackive method, and this has been a problem.
In addition, the method described in Japanese Patent Application Laid-Open No. 2002-25026 (Patent Document 1) integrally processes an insulating layer in which an adhesive layer is provided on one side of a core insulating layer, including the adhesive layer on one side. In this case, the adhesive layer is merely for improving the adhesion between the core insulating layer and the wiring layer or the supporting substrate.
In addition, simply, the semi-additive method is a processing method in which a metal part including a wiring part to be formed is formed by plating, further etching is performed, and a wiring is formed from the plated metal part. The sub-trackive method is a processing method for forming a wiring portion by selective etching of a metal layer that has been prepared in advance.
Japanese Patent Laid-Open No. 2002-25026

As described above, in order, a wiring member composed of a support base material, an insulating layer, and a wiring layer structure has come to be used for various purposes in recent years, but there is a problem in its productivity, There were some aspects of the structure that were lacking in function, and these measures were required.
The present invention is a wiring member that solves the problem of productivity and that can manufacture a wiring member having a layer structure of a support base, an insulating layer, and a wiring, which has advantages not found in the prior art. It is intended to provide a manufacturing method.
At the same time, an object of the present invention is to provide a wiring member manufactured by such a manufacturing method.

In the method for manufacturing a wiring member of the present invention, a first metal layer that is a support base material, a first insulating layer, a second insulating layer, and a second metal layer for forming a wiring portion are sequentially laminated. In the four-layer laminated substrate, the first insulating layer and the second insulating layer each function as an electrically insulating layer, and the second insulating layer is the first insulating layer and the second metal layer. A four-layer laminated substrate that also serves as an adhesive layer is used as a starting material to form a wiring member in which each layer is processed into a predetermined shape. A first metal layer etching step for processing into a predetermined shape by an etching method; a second metal layer etching step for processing the second metal layer into a predetermined shape by a photoetching method; A first insulating layer having a predetermined shape processed by a photo-etching method; Performing a layer etching process step and a second insulating layer etching process step of processing the second insulating layer and the first insulating layer together into a predetermined shape by a photoetching method. The etching in the insulating layer etching process and the etching in the second insulating layer etching process are performed under different conditions. In the first insulating layer etching process, the second insulating layer is etched. The etching selectivity is larger than that in the case where the first insulating layer is etched substantially without etching the second insulating layer, and the first insulating layer is etched without substantially etching the second insulating layer. In the second insulating layer etching processing step, both the second insulating layer and the first insulating layer are etched.
And it is a manufacturing method of said wiring member, Comprising: A 2nd insulating layer has the adhesiveness of 0.5 kN / m or more, It is characterized by the above-mentioned.
In addition, in any of the above wiring member manufacturing methods, the first insulating layer and the second insulating layer are made of polyimide resin.

  Further, in the above method for manufacturing a wiring member, the etching in the etching process of the first insulating layer and the etching in the etching process of the second insulating layer are performed under different conditions respectively for immersion and wet etching. The first insulating layer etching processing step is performed after the second insulating layer etching processing step.

In addition, in any one of the above wiring member manufacturing methods, a first metal layer etching process, a second metal layer etching process, a first insulating layer etching process, and a second insulating layer are provided. After finishing the etching process, a laser beam irradiation step of selectively irradiating a part of the second insulating layer remaining on the surface portion with laser light to open the second insulating layer in the irradiation region It is characterized by performing.
Further, in any one of the above wiring member manufacturing methods, the first metal layer is a stainless steel layer, and the second metal layer is a copper layer.
The term “etching rate” as used herein refers to the amount of decrease in film thickness per unit time caused by etching.
Here, the adhesiveness depends on the JIS standard (JIS C-5012).

The wiring member of the present invention comprises, in order, a first metal layer, a first insulating layer, a second insulating layer, and a second metal layer for forming a wiring portion, each having a predetermined shape as a supporting base material. In the wiring member provided, the first insulating layer and the second insulating layer each function as an electrically insulating layer, and the second insulating layer is connected to the first insulating layer and the second insulating layer. 2 and also serves as an adhesive layer with the metal layer.
And it is said wiring member, Comprising: A 2nd insulating layer has the adhesiveness of 0.5 kN / m or more, It is characterized by the above-mentioned.
In any one of the above wiring members, the first insulating layer and the second insulating layer are made of polyimide resin.
In any one of the wiring members described above, the first metal layer is a stainless steel layer, and the second metal layer is a copper layer.
The wiring member according to any one of claims 1 to 8, wherein the wiring member is formed by the method for manufacturing a wiring member according to any one of claims 1 to 8.

(Function)
The manufacturing method of the wiring member of the present invention has such a structure, which solves the problem of productivity and has advantages not found in the conventional ones, from the support base material, the insulating layer, and the wiring layer structure. It is possible to provide a wiring member manufacturing method capable of manufacturing the wiring member.
Specifically, the etching in the first insulating layer etching process and the etching in the second insulating layer etching process are performed separately under different conditions, so that the supporting base material and the insulating layer (first insulating layer) are processed. This solves the problem of productivity in the manufacturing method of the wiring member having the layer structure of the layer, the second insulating layer) and the wiring.
Examples of the etching method include a dry etching method and a wet etching method performed by dipping. In particular, from the viewpoint of productivity, a wet etching method performed by dipping is preferable.
And the wiring member which has arrange | positioned the 2nd metal layer for forming the 1st metal layer, 1st insulating layer, 2nd insulating layer, and wiring part which are each a predetermined shape in order of a support base material in order. Thus, each of the first insulating layer and the second insulating layer functions electrically as an insulating layer, and the second insulating layer is bonded to the first insulating layer and the second metal layer. It is possible to provide various wiring members having characteristic advantages that also serve as a material layer.
For example, as shown in FIG. 3, the wiring member can be formed by giving three types of selectivity to the capacitance characteristics between the wiring 140a and the supporting base 110a.
That is, there are three types of selectivity in the characteristic impedance of the formed microstrip line.
The wiring member shown in FIG. 3 has a structure in which the first insulating layer 120a and the second insulating layer 130a are arranged between the wiring 140a and the supporting base 110a, and the second insulating layer 130a between the wiring 140a and the supporting base 110a. And a structure in which only the space (air) is arranged between the wiring 140a and the support base 110a can be combined, and thereby the dielectric between the wiring 140a and the support base 110a can be taken. An appropriate dielectric constant can be selected from the three types.
Note that when the dielectric constants of air, the first insulating layer, and the second insulating layer are ε0, ε1, and ε2, the capacitance characteristics between the wiring 140a and the supporting base material 110a are the cross-sectional structure at the point S1. In this case, ε0 and ε2 are determined only by ε1 and ε2 in the cross-sectional structure at point S2, and ε0 in the cross-sectional structure at point S3.
Further, for example, as shown in FIG. 4A, a part of the wiring 140a together with the second insulating layer 130a or the wiring 140a alone as shown in FIG. The wiring member having such a flying lead portion can be effectively used particularly for applications that require weight reduction.
Further, for example, as shown in FIG. 5, the unit processed portions 210 are connected to each other only by the first insulating layer 120a and the second insulating layer 130a, or although not shown, the support substrate 110a is separated. It is also possible to obtain it in a state where it is connected by a part (for example, a partial connecting part) that is easy to cut or cut and is connected to the first insulating layer 120a and the second insulating layer 130a.
Reference numeral 220 denotes a connection part for separating the unit processing part 210.
Further, for example, as shown in FIG. 6, around the product portion 210 </ b> A of the unit processing portion 210, a supporting base 110 a, a first insulating layer 120 a, a second insulating layer 130 a, and a wiring metal layer 140 are provided. In order to form the frame (support frame 210W) and the product part 210A further easily, the first insulating layer 120a and the second insulating layer 130a are connected or connected to each other. However, it is also possible to obtain a part of the supporting base 110a that is easily separated or easily cut and connected with the first insulating layer 120a and the second insulating layer 130a in an impositioned state.
In addition, 210B is a connection part for separation of the product part 210A, and 220 is a connection part for separation of the support frame 210W.
Alternatively, for example, a wiring member for a semiconductor package (also referred to as an interposer) as shown in FIG. 7 can be manufactured.
FIG. 7 is a diagram in which a semiconductor chip is mounted on the produced wiring member. Later, the connection portion 230 formed of the first insulating layer 120a and the second insulating layer 130a between the wirings 140 is cut and individualized. Use.
In FIG. 7, the support substrate 110a is processed to form a heat dissipation die pad and heat spreader, on which a semiconductor chip 250 is mounted.
The wiring 140a is wire-bonded to the terminal in the same direction as the terminal surface of the semiconductor chip 250.
In this case, a Cu material, a Cu alloy material, or the like with good heat dissipation is used as the support base material. Of course, the weight can be reduced and the spring property can be controlled by combining the shapes of the supporting base and the insulating layers. In the method for manufacturing a wiring member according to the present invention, the wiring required to be miniaturized is formed so as to be held by the first insulating layer via the second insulating layer as the adhesive layer, and further the first A wiring member having a configuration in which the insulating layer is held by the support base material is formed, so that the wiring can be reliably held.

From the viewpoint of mechanical properties, thermal expansion characteristics, electrical properties, heat resistance, chemical resistance, etc. required as wiring members, the first insulating layer and the second insulating layer are preferably polyimide resins. Specifically, the first insulating layer and the second insulating layer may be polyimide resins.
Since the first insulating layer is thicker than the second insulating layer and structurally requires basic mechanical characteristics, it is preferable that the first insulating layer has a low expansion coefficient close to the thermal expansion coefficient characteristic of the wiring layer.
In addition, low expansibility means here that a linear expansion coefficient is 40 ppm / degreeC, and the following.
Further, the second insulating layer has adhesiveness, thereby ensuring that the metal layer forming the wiring is held in the first insulating layer. When the adhesiveness is 0.5 kN / m or more, the wiring portion can be reliably held.
Needless to say, the first insulating layer and the second insulating layer are not limited to the polyimide resin as long as each characteristic requirement can be met.

In particular, in the first insulating layer etching process, the etching selectivity is larger than when the second insulating layer is etched, the first insulating layer is substantially etched, and the second insulating layer is substantially etched. Etching the first insulating layer with an etchant that does not etch the layer, and an etchant that can etch both the second insulating layer and the first insulating layer in the second insulating layer etching step, By etching the second insulating layer and the first insulating layer, the first insulating layer and the second insulating layer can be individually processed into predetermined shapes with high productivity. Yes.
In the first insulating layer etching process, the second insulating layer functions as an etching stopper layer.

  In addition, if the etching in the etching process of the first insulating layer and the etching in the etching process of the second insulating layer are performed by immersion and wet etching under different conditions, etching is performed. Processing can be suitable for mass production.

The case where the first insulating layer and the second insulating layer are made of polyimide resin will be further described below.
As the first insulating layer, a low expansion material having a thermal expansion coefficient close to that of the supporting base material and the wiring layer is used, and the occurrence of warpage in the laminated body or the wiring member is reduced. Generally, the polyimide resin is not thermoplastic, and the polyimide resin forming the first insulating layer is not thermoplastic.
On the other hand, when a flexible structure that gives thermoplasticity is introduced into the skeleton of the polyimide-based resin in order to provide adhesion to the polyimide resin as the second insulating layer, chemical resistance tends to increase. The polyimide resin used as the second insulating layer tends to be inferior to the polyimide resin used as the first insulating layer in etching suitability by the wet process, compared with the etching rate of the polyimide resin used as the first insulating layer. It will be separated.
Therefore, when the first insulating layer and the second insulating layer are polyimide resins, here, the first insulating layer is a low-expansion polyimide resin, and the second insulating layer is a thermoplastic polyimide resin. To do.
In addition, the low expansibility here means that whose linear expansion coefficient is 40 ppm / ° C. or less, and the thermoplasticity here means that the glass transition temperature is 100 ° C. or more.
In such a case, the second insulating layer has higher chemical resistance than the first insulating layer, and the etching rate Rt2 of the second insulating layer is equal to or lower than the etching rate Rt1 of the first insulating layer.
Examples of the etchant used in the second insulating layer etching process include alkali-amine-based (for example, ethanolamine and KOH) having high etchability.
Moreover, as an etching solution used in the first insulating layer etching process, a NaOH aqueous solution having a low etching property can be given.
Note that the etching rate referred to here is the amount of decrease in film thickness per unit time caused by etching.
When such a laminated structure in which a first insulating layer made of a low-expansion polyimide resin and a second insulating layer made of a thermoplastic polyimide resin are laminated is etched by a wet process, Since the second insulating layer tends to have high chemical resistance, it is difficult to etch, and the first insulating layer is easily etched. Therefore, the insulating layer having the structure in which the first insulating layer and the second insulating layer are stacked is integrated. In the processing, there is a problem that the entire etching does not proceed uniformly and the etching shape does not become uniform, but the first insulating layer and the second insulating layer are etched in the second insulating layer etching processing step. In the case where the integral processing of the insulating layer having the structure in which the first insulating layer and the second insulating layer are laminated is performed by low-cost wet etching by making the etching rate of the predetermined range. , It is possible to obtain a good etching conditions.
Specifically, in the etching in the second insulating layer etching process, the ratio between the etching rate Rt2 of the second insulating layer and the etching rate Rt1 of the first insulating layer, Rt2: Rt1 is 1:10 to 10. By being in the range of 1: 1, when the second insulating layer is etched, the shape of the boundary between the second insulating layer and the first insulating layer can be maintained to an extent that does not deteriorate.

  Further, when the etching process of the second insulating layer is performed after the etching process of the first insulating layer, only the second insulating layer remains in the etching region, and the thickness of the second insulating layer If the thickness is too thin, strength problems may occur, or the etching region may be concave, and subsequent problems such as resist coating may not be successful. Later, these problems can be solved by performing an etching process of the first insulating layer.

  After finishing the etching process of the first metal layer, the etching process of the second metal layer, the etching process of the first insulating layer, and the etching process of the second insulating layer By performing a laser light irradiation step of selectively irradiating a part of the second insulating layer remaining on the surface portion with laser light and opening the second insulating layer in the irradiation region, the back surface of the wiring ( The terminal part can be formed on the support substrate side)

Moreover, although the 1st metal layer is a stainless steel material layer and the 2nd metal layer is what is a copper layer, it is not limited to these.
Depending on the application, a copper material or an iron-Ni alloy (for example, 42 alloy (42% Ni-iron alloy) or the like) may be used as the first metal layer.
In addition, a copper material is generally used as the second metal layer for forming the wiring. However, depending on the application, for example, copper may be the main component, Ni may be laminated, and Au may be laminated.

The wiring member of the present invention has such a structure that solves the problem of productivity and has advantages not found in the prior art, and is composed of a support base material, an insulating layer, and a wiring layer structure. It is possible to provide.
As described above, a brief description will be given. For example, as shown in FIG. 3, the dielectric constant between the wiring 140a and the support base 110a is made to have three types of selectivity, as shown in FIG. Further, a wiring member that has a flying lead portion and can be effectively used particularly for applications that require weight reduction. For example, as shown in FIG. A wiring member having a shape in which a support frame 210W is provided around the unit processing unit 210 for imposition, and the product unit 210A is easily separated from the support frame 210W of the unit processing unit 210 by a connecting portion 210B for separation, Alternatively, for example, as shown in FIG. 7, a wiring member produced by imposing a wiring portion (also referred to as an interposer) on a unit for a semiconductor package can be used.

  The present invention solves the problem of productivity as described above, and can manufacture a wiring member having a layer structure of a support base, an insulating layer, and a wiring, which has advantages not found in the prior art. It is possible to provide a method and a wiring member manufactured by the manufacturing method.

Embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a process cross-sectional view of an example of an embodiment of a method for manufacturing a wiring member according to the present invention. FIG. 2 is a diagram for explaining drilling of a second insulating layer by a laser after the process of FIG. 3, 4 (a), and 4 (b) are cross-sectional views showing a part of an example of a wiring member, and FIG. 5 (a) is a plan view of the wiring member that has been impositioned. 5 (b) is a cross-sectional view taken along B1-B2 in FIG. 5 (a), FIG. 6 (a) is a plan view of the wiring member subjected to imposition, and FIG. 6 (b) is a cross-sectional view taken along C1- FIG. 7 is a cross-sectional view at C2, and FIG. 7 is a view showing a wiring member for a semiconductor package subjected to imposition processing.
1 to 7, reference numeral 110 denotes a first metal layer (also referred to as a supporting base material), 110a denotes a supporting base material, 115A denotes an opening (of the supporting base material), and 120 denotes a first insulating layer (also referred to as a polyimide resin layer). 120a is the first insulating layer, 130a is the second insulating layer, 125 is the opening (of the first insulating layer), 130 is the second insulating layer (also called the polyimide resin layer), and 135 is the (first insulating layer). 2), 140 is a second metal layer, 145A is an opening (of the second metal layer), 150 and 155 are resists, 160 is a laser beam, 210 is a unit processing portion, and 220 and 230 are A connection part for separation, 210W is a support frame part, 210A is a product part, 210B is a connection part for separation, 250 is a semiconductor chip, and 251 is a bonding wire.

First, an example of an embodiment of a method for manufacturing a wiring member according to the present invention will be described with reference to FIG.
In the manufacturing method of the wiring member of this example, in order, a first metal layer as a support base, a first insulating layer made of a low-expansion polyimide resin, a second insulating layer made of a thermoplastic polyimide resin, A four-layer laminated substrate in which a second metal layer for forming a wiring part is laminated, and the first insulating layer and the second insulating layer each function as an insulating layer electrically. A wiring obtained by processing each layer into a predetermined shape using a four-layer laminated substrate in which the second insulating layer also serves as an adhesive layer between the first insulating layer and the second metal layer as a starting material It is a manufacturing method of the wiring member which forms a member.
As described above, the low expansibility here means that the linear expansion coefficient is 40 ppm / ° C. or less, and the thermoplasticity here means that the glass transition temperature is 100 ° C. or more. say.
First, in order, a first metal layer which is a support base material, a first insulating layer made of a low-expansion polyimide resin, a second insulating layer made of a thermoplastic polyimide resin, and a first insulating layer for forming a wiring portion. A four-layer laminated substrate in which two metal layers are laminated is prepared. (Fig. 1 (a))
Such a four-layer laminated substrate is formed by thermocompression forming or the like.
First, a 10 wt% polyimide precursor solution for forming the first insulating layer obtained as described below was applied onto the first metal layer using a bar coater so that the thickness after curing was 12 μm. Then, it is dried in an oven at 110 ° C. for 3 minutes to form a first layer for forming the first insulating layer.
<Preparation of 10 wt% polyimide precursor solution for forming first insulating layer>
20.0 g of 4,4′-diaminodiphenyl ether was put into a 1000 ml separable flask, dissolved in 359 ml of dimethylacetamide (DMAc), and then pyromellitic dianhydride 21 under nitrogen atmosphere with stirring by a mechanical stirrer. 8 g is added and stirring is continued at room temperature for 4 hours to obtain a 10 wt% polyimide precursor solution.
Next, on the first layer for forming the first insulating layer, a 10 wt% polyimide precursor solution for forming the second insulating layer obtained as described below was used using a bar coater. The cured layer is applied to a thickness of 2.5 μm and dried in an oven at 110 ° C. for 3 minutes to form a second layer for forming a second insulating layer.
<Preparation of 10 wt% polyimide precursor solution for forming second insulating layer>
20.0 g of 4,4′-diaminodiphenyl ether was put into a 1000 ml separable flask, dissolved in 359 ml of dimethylacetamide (DMAc), and then ethylene glycol bistrimellitic acid 2 anhydrous in a nitrogen atmosphere while stirring with a mechanical stirrer. 41.0 g of the product is added, and stirring is continued at room temperature for 4 hours to obtain a 10 wt% polyimide precursor solution.
Next, in order, heat treatment is performed at 130 ° C. for 10 minutes, 200 ° C. for 10 minutes, and 300 ° C. for 60 minutes to perform imidization, whereby a first insulating layer made of polyimide resin is formed on the first metal layer, respectively. A second insulating layer is formed.
Further, by arranging the second metal layer on the second insulating layer side, sandwiching the first metal layer and the second metal layer, applying a pressure of 1 MPa, and vacuum pressing at 330 ° C. for 10 minutes, A four-layer laminated substrate including the first metal layer, the first insulating layer, the second insulating layer, and the second metal layer is obtained.
In this example, a stainless steel material is used as the first metal layer, and a Cu foil or the like is used as the second metal layer for wiring formation. However, depending on the application, a copper material or a copper-Ni alloy ( For example, 42 alloy (42% Ni-copper alloy) or the like may be used.
In addition, a copper material is generally used as the second metal layer for wiring formation, but depending on the application, for example, copper may be the main layer, Ni may be laminated, and Au or the like may be laminated. .

Next, although not shown, a first metal layer etching process for processing the first metal layer 110 into a predetermined shape by a photoetching method, and a second metal layer 140 into a predetermined shape by a photoetching method. A second metal layer etching process to be processed is performed, and the first metal layer (also referred to as a supporting base material) 110 and the first metal layer 140 are each etched into a predetermined shape. (Fig. 1 (b))
In this example, a resist is applied to both sides of the four-layer laminated substrate shown in FIG. 1 (a), a predetermined original plate is used for each of the front and back sides, each is exposed with a high-pressure mercury lamp, etc. After developing into a shape having a predetermined opening, the metal part exposed from the opening of the resist on both sides is etched using a predetermined etching solution, and then the resist on both sides is removed with a predetermined stripping solution. .
In this example, a stainless steel material is used as the first metal layer and a Cu foil or the like is used as the second metal layer for forming the wiring. However, when metal layers of other materials are used and the etching rates of the metal layers on both sides are greatly different, the resist resist plate making and etching are carried out separately on the front and back sides, with the etching solution separately.
In this case, the opposite surface side is covered with a protective film (resist or the like) so as not to be etched. As the resist, a resist having desired resolution, etching resistance, and good processability is preferable. In this example, a dry film resist is used, but the resist is not limited thereto.

Next, a resist is applied to both surfaces, the resist on both surfaces is patterned in a predetermined shape having a predetermined opening (FIG. 1C), and the second insulating layer and the second resist are patterned using the patterned resist pattern as an anti-etching mask. Etching together with one insulating layer and penetrating two layers. (Fig. 1 (d))
In this example, since the low-expansion polyimide resin is used as the first insulating layer 120 and the thermoplastic polyimide resin is used as the second insulating layer 130, the second insulating layer is used as the first insulating layer. Compared with the chemical resistance and the etching rate Rt2 of the second insulating layer is equal to or lower than the etching rate Rt1 of the first insulating layer, in this example, the second insulating layer 130 can be etched as an etchant. Etching is performed by dipping and wet etching using an alkali-amine etching solution (for example, ethanolamine and KOH) having a high etching property. Application of the processing resist 150 for etching the first insulating layer 120 and the second insulating layer 130 is performed by a dry film resist method, a dip coating method, a roll coating method, a die coating method, a printing method, etc. Form on both sides.
The resist 150 is preferably one having desired resolution, etching resistance, and good processability, and is not particularly limited.
Here, the ratio of the etching rate Rt2 of the second insulating layer 130 to the etching rate Rt1 of the first insulating layer 120, Rt2: Rt1, is set to be in the range of 1:10 to 1: 1. When the insulating layer 130 is etched, the shape of the boundary between the second insulating layer 130 and the first insulating layer 120 can be maintained to such an extent that it does not deteriorate.
As described above, the etching rate is a reduction amount of the film thickness per unit time caused by etching.
For example, when the first insulating layer and the second insulating layer formed by applying and imidizing the respective precursors described above are used, an alkali-amine polyimide etching solution (manufactured by Toray Engineering Co., Ltd., TPE) is used. -3000), the etching rate Rt2 of the second insulating layer 130 is 11 μ / min, and the etching rate Rt1 of the first insulating layer 120 is 20 μ / min.
In this case, Rt2: Rt1 = 11: 20.

Next, after etching, the patterned resist 150 is removed with a predetermined stripping solution (FIG. 1 (e)), and then the resist is applied to both surfaces, and the resist on both surfaces is patterned into a predetermined shape having predetermined openings ( In FIG. 1F, the first insulating layer is etched and penetrated using the patterned resist pattern as an etching resistant mask. (FIG. 1 (g)) Here, the etching selectivity is larger than when the second insulating layer is etched, the first insulating layer is substantially etched, and the second insulating layer is substantially removed. Etching is performed by dipping and wet etching using an aqueous NaOH solution having a low etching property as an etching solution that is not etched.
Application of the processing resist 155 for etching the first insulating layer 120 is performed by a dry film resist method, a dip coating method, a roll coating method, a die coating method, a printing method, or the like, and is formed on both surfaces.
The resist 155 is preferably one having desired resolution, etching resistance, and good processability, and is not particularly limited.
Thereafter, the resist 155 is removed with a predetermined stripping solution.
In this manner, the first metal layer 110, the first insulating layer 120, the second insulating layer 130, and the second metal layer for forming the wiring portion, which are each a predetermined shape, are sequentially formed in this manner. In the wiring member 140, the first insulating layer 120 and the second insulating layer 130 each function as an electrically insulating layer, and the second insulating layer 130 is the first insulating layer. A wiring member that also serves as an adhesive layer between the layer 120 and the second metal layer 140 can be formed.
In addition, as a structure of a wiring member, various things as shown in FIGS. 3-7 mentioned above are mentioned.

In this example, the etching process for etching only the first insulating layer is performed after the etching process for etching the first insulating layer 120 and the second insulating layer 130 together. As a modification of the example, one in which the etching steps are performed in the reverse order can be cited.
However, in the modified example, only the second insulating layer 130 remains in the region where only the first insulating layer 120 is etched, and if the thickness of the second insulating layer 130 is thin, there is a problem of strength. In some cases, the etching region has a concave shape, and subsequent resist coating and other operations cannot be performed successfully.
In the case of this example, these problems can be solved.

Furthermore, as another method of manufacturing a wiring member according to another modified example, a laser beam 160 is selectively irradiated to a part of the second insulating layer 130 remaining on the surface portion after FIG. (FIG. 2A), and a method of performing a laser light irradiation process in which the second insulating layer in the irradiation region is opened (FIG. 2B).
An opening formed by this method can be used as a terminal portion.
If necessary, terminal plating such as Ni plating and Au plating can be applied in order to use as a terminal portion.

In addition, as a comparative example of this example, in place of the laminated substrate in which the first metal layer, the first insulating layer, the second insulating layer, and the second metal layer are laminated in this order, A laminated substrate in which a first metal layer, a first insulating layer, a second insulating layer, a third insulating layer, and a second metal layer for forming a wiring portion, which are support base materials, are laminated. There is also a method of forming a wiring member in which each of the three insulating layers also serves as an adhesive layer like the first insulating layer as a starting material and each layer is processed into a predetermined shape.
Also in this case, the wiring member having various unique structures can be obtained by appropriately combining the processing of the insulating layer by the wet etching method and the processing of the insulating layer by the dry etching method. Compared with the method, the process steps are complicated.

It is process sectional drawing of one example of embodiment of the manufacturing method of the wiring member of this invention. It is a figure for demonstrating the drilling process of the 2nd insulating layer by a laser after the process of FIG.1 (f). It is sectional drawing which shows a part of one example of a wiring member. It is sectional drawing which shows a part of one example of a wiring member. Fig.5 (a) is a top view of the wiring member which carried out the imposition process, FIG.5 (b) is sectional drawing in B1-B2 of Fig.5 (a). FIG. 6A is a plan view of the wiring member subjected to imposition processing, and FIG. 6B is a cross-sectional view taken along line C1-C2 of FIG. It is the figure which showed the wiring member for semiconductor packages of an imposition process.

Explanation of symbols

110 First metal layer (also referred to as support substrate)
110a Support substrate 115A (support substrate) opening 120 First insulating layer (also referred to as polyimide resin layer)
120a First insulating layer 130a Second insulating layer 125 Opening 130 (first insulating layer) Second insulating layer (also referred to as polyimide resin layer)
135 (second insulating layer) opening 140 second metal layer 145A (second metal layer) opening 150, 155 resist 160 laser beam 210 processing unit 220, 230 separation connecting part 210W support frame part 210A Product part 210B Separation connection part 250 Semiconductor chip 251 Bonding wire

Claims (12)

  A four-layer laminated substrate in which a first metal layer that is a supporting base material, a first insulating layer, a second insulating layer, and a second metal layer for forming a wiring portion are laminated in order, The insulating layer and the second insulating layer each function electrically as an insulating layer, and the second insulating layer also serves as an adhesive layer between the first insulating layer and the second metal layer. A method of forming a wiring member in which a four-layer laminated substrate is used as a starting material and each layer is processed into a predetermined shape, wherein the first metal layer is processed into a predetermined shape by a photoetching method. A first metal layer etching process, a second metal layer etching process for processing the second metal layer into a predetermined shape by a photoetching method, and a predetermined shape of the first insulating layer by a photoetching method. A first insulating layer etching process to be processed; The second insulating layer etching step is performed by integrating the two insulating layers and the first insulating layer into a predetermined shape by a photoetching method. Etching in the first insulating layer etching step Etching in the etching process of the second insulating layer is performed under different conditions. In the first insulating layer etching process, the etching selectivity is compared with the case of etching the second insulating layer. The first insulating layer is etched substantially without etching the second insulating layer and substantially without etching the second insulating layer; and in the second insulating layer etching step, A method for manufacturing a wiring member, wherein both the second insulating layer and the first insulating layer are etched. The method for manufacturing a wiring member according to claim 1, wherein the second insulating layer has an adhesiveness of 0.5 kN / m or more. 3. The method for manufacturing a wiring member according to claim 1, wherein the first insulating layer and the second insulating layer are made of polyimide resin. 4. The method of manufacturing a wiring member according to claim 1, wherein the etching in the first insulating layer etching process and the etching in the second insulating layer etching process are different from each other. A method for manufacturing a wiring member, which is performed by immersion or wet etching under conditions. The method for manufacturing a wiring member according to claim 4, wherein the first insulating layer etching process is performed after the second insulating layer etching process. The wiring member manufacturing method according to any one of claims 1 to 5, wherein the first metal layer etching step, the second metal layer etching step, and the first insulating layer etching step. And after the second insulating layer etching process step, a part of the second insulating layer remaining on the surface portion is selectively irradiated with laser light to form the second insulating layer in the irradiation region. A method of manufacturing a wiring member, wherein an opening is performed. The wiring member manufacturing method according to any one of claims 1 to 6, wherein the first metal layer is a stainless steel layer and the second metal layer is a copper layer. Manufacturing method.   A wiring member in which a first metal layer, a first insulating layer, a second insulating layer, and a second metal layer for forming a wiring portion, each having a predetermined shape, are disposed in order. The first insulating layer and the second insulating layer each function as an electrically insulating layer, and the second insulating layer is bonded to the first insulating layer and the second metal layer. A wiring member that also serves as a material layer.   The wiring member according to claim 8, wherein the second insulating layer has an adhesiveness of 0.5 kN / m or more.   The wiring member according to any one of claims 8 to 9, wherein the first insulating layer and the second insulating layer are made of a polyimide resin. The wiring member according to any one of claims 8 to 10, wherein the first metal layer is a stainless steel layer and the second metal layer is a copper layer. The wiring member according to any one of claims 8 to 11, wherein the wiring member is formed by the method for manufacturing a wiring member according to any one of claims 1 to 7.

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