JP2005345826A5 - - Google Patents
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- Publication number
- JP2005345826A5 JP2005345826A5 JP2004166290A JP2004166290A JP2005345826A5 JP 2005345826 A5 JP2005345826 A5 JP 2005345826A5 JP 2004166290 A JP2004166290 A JP 2004166290A JP 2004166290 A JP2004166290 A JP 2004166290A JP 2005345826 A5 JP2005345826 A5 JP 2005345826A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- gas
- target
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000010408 film Substances 0.000 description 41
- 239000010409 thin film Substances 0.000 description 38
- 239000007789 gas Substances 0.000 description 35
- 230000003287 optical effect Effects 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910017768 LaF 3 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000010436 fluorite Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 2
- XRADHEAKQRNYQQ-UHFFFAOYSA-K trifluoroneodymium Chemical compound F[Nd](F)F XRADHEAKQRNYQQ-UHFFFAOYSA-K 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000276498 Pollachius virens Species 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004166290A JP2005345826A (ja) | 2004-06-03 | 2004-06-03 | 光学素子、光学装置、成膜方法、成膜装置及びデバイス製造方法 |
| US11/144,168 US7295367B2 (en) | 2004-06-03 | 2005-06-03 | Optical element, optical apparatus, film forming method, film forming apparatus and device fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004166290A JP2005345826A (ja) | 2004-06-03 | 2004-06-03 | 光学素子、光学装置、成膜方法、成膜装置及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005345826A JP2005345826A (ja) | 2005-12-15 |
| JP2005345826A5 true JP2005345826A5 (enExample) | 2007-07-19 |
Family
ID=35448600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004166290A Pending JP2005345826A (ja) | 2004-06-03 | 2004-06-03 | 光学素子、光学装置、成膜方法、成膜装置及びデバイス製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7295367B2 (enExample) |
| JP (1) | JP2005345826A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006003847B4 (de) * | 2006-01-26 | 2011-08-18 | Siemens AG, 80333 | Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat |
| EP1965229A3 (en) * | 2007-02-28 | 2008-12-10 | Corning Incorporated | Engineered fluoride-coated elements for laser systems |
| JP2013082954A (ja) * | 2011-10-06 | 2013-05-09 | National Central Univ | 純金属ターゲットで反応性スパッタリング方法を用いて作製されたフッ化物及びフッ素をドープした酸化物薄膜 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11223707A (ja) | 1998-02-06 | 1999-08-17 | Nikon Corp | 光学部材及びその製造方法 |
| JP2001279437A (ja) | 2000-03-28 | 2001-10-10 | Nikon Corp | 成膜方法、成膜装置、光学部材及び露光装置 |
| JP2002040207A (ja) * | 2000-07-27 | 2002-02-06 | Canon Inc | 光学付加膜及び光学素子 |
-
2004
- 2004-06-03 JP JP2004166290A patent/JP2005345826A/ja active Pending
-
2005
- 2005-06-03 US US11/144,168 patent/US7295367B2/en not_active Expired - Fee Related
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