JP2005322886A - 溶剤を含有する低誘電体材料を調製するための組成物 - Google Patents
溶剤を含有する低誘電体材料を調製するための組成物 Download PDFInfo
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- JP2005322886A JP2005322886A JP2005057689A JP2005057689A JP2005322886A JP 2005322886 A JP2005322886 A JP 2005322886A JP 2005057689 A JP2005057689 A JP 2005057689A JP 2005057689 A JP2005057689 A JP 2005057689A JP 2005322886 A JP2005322886 A JP 2005322886A
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- 239000000203 mixture Substances 0.000 title claims abstract description 293
- 239000002904 solvent Substances 0.000 title claims abstract description 131
- 239000003989 dielectric material Substances 0.000 title description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 201
- 238000000034 method Methods 0.000 claims abstract description 107
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 98
- 239000000654 additive Substances 0.000 claims abstract description 65
- 230000000996 additive effect Effects 0.000 claims abstract description 52
- 239000003361 porogen Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000003054 catalyst Substances 0.000 claims abstract description 42
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 22
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 11
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 8
- 239000000758 substrate Substances 0.000 claims description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 48
- 238000009987 spinning Methods 0.000 claims description 40
- 238000009835 boiling Methods 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 25
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims description 24
- -1 polydimethylsiloxane Polymers 0.000 claims description 23
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 22
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical group CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 22
- 125000000962 organic group Chemical group 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 230000002829 reductive effect Effects 0.000 claims description 17
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- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 claims description 15
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- 125000004429 atom Chemical group 0.000 claims description 12
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- 238000000576 coating method Methods 0.000 claims description 9
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- 150000001412 amines Chemical class 0.000 claims description 7
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- 238000010438 heat treatment Methods 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 7
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 6
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims description 6
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 claims description 6
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical compound CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 claims description 6
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 6
- 229910018540 Si C Inorganic materials 0.000 claims description 6
- 125000000524 functional group Chemical group 0.000 claims description 6
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 6
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 claims description 6
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical compound CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 claims description 3
- RFZHJHSNHYIRNE-UHFFFAOYSA-N 2,3-dimethylpentan-3-ol Chemical compound CCC(C)(O)C(C)C RFZHJHSNHYIRNE-UHFFFAOYSA-N 0.000 claims description 3
- NUNQKTCKURIZQX-UHFFFAOYSA-N 2-(2-ethoxyethoxy)-2-methylpropane Chemical compound CCOCCOC(C)(C)C NUNQKTCKURIZQX-UHFFFAOYSA-N 0.000 claims description 3
- FQQBAHSCHMASLR-UHFFFAOYSA-N 2-(2-methoxyethoxy)-2-methylpropane Chemical compound COCCOC(C)(C)C FQQBAHSCHMASLR-UHFFFAOYSA-N 0.000 claims description 3
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 claims description 3
- ZDVJGWXFXGJSIU-UHFFFAOYSA-N 5-methylhexan-2-ol Chemical compound CC(C)CCC(C)O ZDVJGWXFXGJSIU-UHFFFAOYSA-N 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 150000001298 alcohols Chemical group 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 238000005292 vacuum distillation Methods 0.000 claims description 3
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- 229940054273 1-propoxy-2-propanol Drugs 0.000 claims description 2
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- 229940093475 2-ethoxyethanol Drugs 0.000 claims description 2
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- ZXNBBWHRUSXUFZ-UHFFFAOYSA-N 3-methyl-2-pentanol Chemical compound CCC(C)C(C)O ZXNBBWHRUSXUFZ-UHFFFAOYSA-N 0.000 claims 2
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 239000007859 condensation product Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 147
- 239000000243 solution Substances 0.000 description 78
- 235000012431 wafers Nutrition 0.000 description 51
- 230000008569 process Effects 0.000 description 44
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 44
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 28
- 239000004094 surface-active agent Substances 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000003153 chemical reaction reagent Substances 0.000 description 25
- 239000012528 membrane Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- 239000012535 impurity Substances 0.000 description 21
- 239000000523 sample Substances 0.000 description 21
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 19
- 229920000642 polymer Polymers 0.000 description 19
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000001704 evaporation Methods 0.000 description 15
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- 238000009472 formulation Methods 0.000 description 14
- 229920004929 Triton X-114 Polymers 0.000 description 12
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- IDOQDZANRZQBTP-UHFFFAOYSA-N 2-[2-(2,4,4-trimethylpentan-2-yl)phenoxy]ethanol Chemical compound CC(C)(C)CC(C)(C)C1=CC=CC=C1OCCO IDOQDZANRZQBTP-UHFFFAOYSA-N 0.000 description 10
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- 238000005227 gel permeation chromatography Methods 0.000 description 9
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- TVJPBVNWVPUZBM-UHFFFAOYSA-N [diacetyloxy(methyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(OC(C)=O)OC(C)=O TVJPBVNWVPUZBM-UHFFFAOYSA-N 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
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- 238000009736 wetting Methods 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
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- 241000894007 species Species 0.000 description 3
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- FKJVYOFPTRGCSP-UHFFFAOYSA-N 2-[3-aminopropyl(2-hydroxyethyl)amino]ethanol Chemical compound NCCCN(CCO)CCO FKJVYOFPTRGCSP-UHFFFAOYSA-N 0.000 description 2
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
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- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
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- AMUIJRKZTXWCEA-UHFFFAOYSA-N triphenoxy(propyl)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CCC)OC1=CC=CC=C1 AMUIJRKZTXWCEA-UHFFFAOYSA-N 0.000 description 1
- AABYOUNGNSKTRH-UHFFFAOYSA-N triphenoxy(triphenoxysilylmethyl)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)C[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 AABYOUNGNSKTRH-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- FZFXNINVPZNABQ-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-(2-methylpropyl)silane Chemical compound CC(C)C[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C FZFXNINVPZNABQ-UHFFFAOYSA-N 0.000 description 1
- FCTKBQXOGURHPR-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-pentan-2-ylsilane Chemical compound CCCC(C)[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C FCTKBQXOGURHPR-UHFFFAOYSA-N 0.000 description 1
- JICSGUKZEPKYFR-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-pentylsilane Chemical compound CCCCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C JICSGUKZEPKYFR-UHFFFAOYSA-N 0.000 description 1
- KGOOITCIBGXHJO-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-phenylsilane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=CC=C1 KGOOITCIBGXHJO-UHFFFAOYSA-N 0.000 description 1
- MJIHPVLPZKWFBL-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-propan-2-ylsilane Chemical compound CC(C)(C)O[Si](C(C)C)(OC(C)(C)C)OC(C)(C)C MJIHPVLPZKWFBL-UHFFFAOYSA-N 0.000 description 1
- DIZPPYBTFPZSGK-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-propylsilane Chemical compound CCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C DIZPPYBTFPZSGK-UHFFFAOYSA-N 0.000 description 1
- QCKKBOHAYRLMQP-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[SiH](OC(C)(C)C)OC(C)(C)C QCKKBOHAYRLMQP-UHFFFAOYSA-N 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
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- B42B5/00—Permanently attaching together sheets, quires or signatures otherwise than by stitching
- B42B5/08—Permanently attaching together sheets, quires or signatures otherwise than by stitching by finger, claw or ring-like elements passing through the sheets, quires or signatures
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- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B42P—INDEXING SCHEME RELATING TO BOOKS, FILING APPLIANCES OR THE LIKE
- B42P2241/00—Parts, details or accessories for books or filing appliances
- B42P2241/02—Fasteners; Closures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Textile Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Paints Or Removers (AREA)
- Insulating Bodies (AREA)
- Silicon Polymers (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
【解決手段】 シリカ系材料を調製するための組成物であって、少なくとも1つのシリカ源と、溶剤と、少なくとも1つのポロゲンと、任意選択で触媒と、任意選択で流動添加剤とを含み、該溶剤が、90℃〜170℃の温度で沸騰し、化学式、HO−CHR8−CHR9−CH2−CHR10R11(式中、R8、R9、R10及びR11は、独立して1〜4個の炭素原子のアルキル基又は水素原子であることができる);R12−CO−R13(式中、R12は3〜6個の炭素原子を有する炭化水素基であり;R13は1〜3個の炭素原子を有する炭化水素基である);及びそれらの混合物によって表される化合物から成る群より選択された組成物によって上記課題を解決する。
【選択図】 なし
Description
1つ又は複数の疎水性及び親水性のシリカ源を1つ又は複数の溶剤に加えることにより組成物を調製して溶液を得た。ポロゲンをこのケイ酸塩に加える。以下の試薬を別の容器において又はケイ酸塩に引き続き添加することにより、触媒、水(試薬によって全ての水が供給されない場合)及びイオン添加剤を添加する。触媒とイオン添加剤を混合するのに別の容器を用いる場合には、この溶液をケイ酸塩溶液に添加して組成物を得ることになろう。触媒とイオン添加剤の添加に続いて、組成物を約5分未満の間撹拌し、室温で1〜72時間熟成させる。組成物中の各化学試薬は、1ppm未満の金属不純物を含有していた。処方物中に用いられる全ての試薬は、米国公開公報第2004−0048960号で記載されている方法を用いて、充填床のイオン交換樹脂又は蒸留によりアルカリ金属が200ppb未満になるまで精製した。
テトラエチルオルソシリケート(TEOS)22.5gとメチルトリエトキシシラン(MTES)22.5gを1−ペンタノール100gに添加し、十分に混合した。精製した9.67gのTriton X−114をケイ酸塩溶液に添加し、撹拌して均質な溶液を得た。別のビンに、水中2.4wt%のテトラメチルアンモニウムヒドロキシド(TMAH)1gを0.1Mの硝酸(HNO3)24gに添加した。HNO3溶液をケイ酸塩溶液に直接添加した。組成物全体を約30分間撹拌した。
沸点、表面張力、粘度及び溶解パラメータの適切な組み合わせを有する溶剤又は50/50モル%の溶剤の混合物100gを1−ペンタノールの代わりに用いた以外は、例1で用いたのと同じ手順を繰り返した。例2〜5と12〜13は、物理的及び化学的性質が好ましい範囲にない1つ又は複数の溶剤を用いた比較用の組成物である。組成物1〜13から作製した膜の特性を表2に与える。
表3は、膜形成用組成物1と14〜24に関する周囲環境での貯蔵寿命と関連した様々なパラメータの比較を与える。表3において、厚さ安定性は厚さの変化が初期値から1.5%と規定され;誘電率安定性又はk安定性は誘電率の変化が初期値から1%と規定され;除去成分(例えば、低沸点溶剤、溶剤及び水)の%は、減量した組成物の各成分の合計モル数を初期又は減量していない組成物から得られる合計モル数で割り100掛けたものに基づいている。表3に示す通り、例示的な組成物14、17、18、19、21及び23は、10日を超えて周囲環境での貯蔵安定性を有する。残りの例は、組成物が所望の範囲にない比較例である。
TEOS97.3g、MTES97.3g、1−ペンタノール497.3g、触媒溶液(0.1MのHNO3103.7gと2.4wt%のTMAH4.3g)108.1gを一緒にして均一になるまで混合した。この溶液を60℃で2時間撹拌した。60℃で2時間経過した後、回転蒸発器を用い60℃で以って混合物から揮発性成分を約20wt%除去することにより溶液を濃縮した(エタノール、水及びペンタノール160gを除去した)。溶液を室温まで冷却した。1−ペンタノール160gを処方物に添加し、均一になるまで撹拌した。次いで、69.9gのTriton X−114を溶液に添加し、混合して確実に組成物を均質にした。
TEOS109.2g、MTES109.4g、PGPE557.4gを丸底フラスコに充填し、十分に混合して透明な溶液を生成した。次に、0.1MのHNO3116.4gと2.4wt%のTMAH4.9gをフラスコに添加して十分に混合した。このフラスコを回転蒸発器の上に置き、回転させながら60℃で2時間加熱した。加水分解の部分が完了した後、エタノール、水及びPGPEを初期溶液の5wt%が除去されるまで真空下でゆっくりと蒸留した。この時点で真空を解除し、溶液を蒸留プロセスの開始後合計2時間60℃で反応させた。溶液の加熱後、フラスコに蓋をして室温まで冷却した。45gのPGPEと103.6gのTriton X−114をケイ酸塩溶液に添加した。溶液が透明かつ均質になるまで組成物を混合した。
蒸留中に除去される初期の溶液、典型的には低沸点溶剤、水及び溶剤のwt%が表5に示すよう変化したこと以外は、例15の場合と同じ手順を用いた。組成物に添加される溶剤の質量は、蒸留中に除去された低沸点溶剤、水及び溶剤の質量に等しい。
以下の試薬、TEOS109.1g、MTES109.4g、PGPE557.3g、Triton X−114 105.4g及び水195.3gを丸底フラスコに充填した。フラスコを封止し室温で1時間静置した。別の容器において、0.1MのHNO3116.5gと2.4wt%のTMAH5.0gを一緒にして十分に混合した。次いで、HNO3/TMAH溶液をケイ酸塩含有溶液に添加して十分に混合した。このフラスコを回転蒸発器の上に置き、連続的に撹拌しながら60℃で2時間加熱した。最初の加熱後、60℃約90分間の真空蒸留により、エタノール、水及びPGPEを347.4g(初期処方物の約30wt%)除去した。溶液を室温まで冷却した。溶液の合計質量を一定に保つため、PGPE347.1gを処方物に添加した。フラスコを撹拌して確実に組成物を均一にした。
以下の試薬、TEOS3.82g、MTES3.82g、PGPE33.2g、L101 1.86gを溶液が透明になるまで混合した。次に、水3.51gをケイ酸塩含有溶液に添加して短時間混合した。別の容器において、0.025MのHNO33.54gと1.2wt%のTMAH0.27gを一緒にして混合した。HNO3/TMAH溶液をケイ酸塩含有溶液に添加して、組成物が透明になるまで撹拌した。
TEOS112.5g、MTES112.55g及びPGPE575.2gを丸底フラスコに一緒にして混合した。別の容器において、0.1MのHNO3120.5gと2.4wt%のTMAH5.4gを添加し、酸−塩基の中和熱が全て散逸するまで撹拌した。触媒溶液をケイ酸塩溶液に添加し、透明な溶液が得られるまで撹拌した。溶液を連続撹拌のもと60℃に加熱し、60℃の温度で2時間維持した。ケイ酸塩を加水分解した後、生成物を60℃で真空蒸留し、エタノール、水及びPGPEを約20wt%(溶液の187.2g)除去した。60℃での蒸留は約45分で完了した。溶液を室温に約1時間冷却した。次に、PGPE187.2gとPluronic L101 54.9gを組成物に添加し、均質になるまで撹拌した。
TEOS101.3g、MTES101.32g、1−ペンタノール540.9g及びPluronic L31 EO−PO−EOトリブロックコポリマー52.48gを丸底フラスコに充填した。界面活性剤とケイ酸塩を一緒にして混合した後、水93.34gを添加して3〜4分間激しく撹拌した。別の容器において、0.025MのHNO393.13gと1.2wt%のTMAH7.51gを一緒にして混合した。HNO3/TMAH溶液をケイ酸塩溶液に添加した。溶液を連続撹拌のもと60℃に加熱した。溶液を60℃で2時間維持した。2時間後、溶液を60℃で真空蒸留し、エタノール、水及びペンタノールを含有する溶液を約30wt%(溶液の228.2g)除去した。溶液を室温まで冷却し、次いで0.2μmのTeflonフィルターで濾過した。次に、1−ペンタノール288.2gを組成物に添加し、溶液が透明になるまで撹拌した。
表4は、流動添加剤を含有する幾つかの組成物に関する表面張力と粘度のデータをまとめている。表5は、流動添加剤を含有する膜形成用組成物を用いて調製した異なる厚さの膜に関する表面粗さをまとめ、流動添加剤を用いていない比較例とそれらを比較している。プロフィロメトリーによって決定される表面粗さは、筋高さの尺度であり、膜の他の欠陥の指標である。
試薬を以下の順、即ち、TEOS22.5g、MTES22.5g、PGPE130.5g、0.1MのHNO340g、水8.3g、2.4wt%のTMAH7.4g、Triton X−114 11.8gで添加した。処方物の全成分を添加した後、溶液を2〜3分間十分に混合した。Byk354 2.45gを処方物に滴下し十分に混合した。組成物を12〜24時間熟成した後、0.2μmのTeflonフィルターで濾過した。
例26〜35は、処方物中の流動添加剤のタイプと量を表6に示すよう変更した以外は、例25と同じ添加の順序及び試薬の量である。
以下の試薬、即ち、TEOS15.2g、MTES15.3g、PGPE40.5g、0.1MのHNO316g及び2.4wt%のTMAH溶液0.7gをTeflonボトルに逐次的に加えた。組成物を混ぜ合わせ透明な溶液を得た。ポロゲン、Triton X−114 6.5gをケイ酸塩溶液に添加して2〜3分間混合した。組成物を十分に混合した後、20.96gアリコートを採取して別の容器に加えた。ケイ酸塩組成物を撹拌しながら、ポロゲン/ケイ酸塩組成物を含有するアリコートにISOPAR(商標)Gを添加し4〜5分間混合した。
これらの例は、BYK添加剤をPGPEの0.2wt%溶液として添加した以外は、例36と同じようにして行った。表6は、溶液の表面張力を適度に又は相当に低下させる流動添加剤、即ち、Byk 331、307、333が、膜の筋を最小限に抑えることを示している。より厚い膜を生成する、即ち、溶剤のより少ない組成物中の流動添加剤の使用は、表面粗さを低下するのにより効果的な場合があることにも注目すべきである。
TEOS22.5g、MTES22.5g、PGPE115g、Triton X−114 16.1gをTeflonボトル内で一緒にし、流動添加剤を加えないで溶液Aを得た。別の容器において、0.1MのHNO324gと2.4wt%のTMAH溶液1gを一緒にして溶液Bを得た。溶液Aを撹拌しながら、溶液Bを溶液Aにゆっくりと添加し、15分間混合して溶液を均質にした。組成物を12〜24時間熟成させた。
例45〜49は、表5に示す適切な量の流動添加剤を加えた以外は、例44と同じ混合手順及び堆積方法に従った。表5のデータに基づいて、組成物が組成物の表面張力を低下できるものとして記載される表面流動添加剤を17ppmよりも多く含有する場合には、筋は、プロフィロメトリーによってもはや検出できず、拡大しても見ることができない。
水12.5gとテトラアセトキシシラン(TAS)22.5gを1−プロパノール40.1gに添加し、この溶液を1時間混合した。TAS溶液を周囲条件下で1〜24時間熟成させた。メチルトリアセトキシシラン(MTAS)23.1gと0.025MのHNO37.2gの溶液をTAS溶液に添加し、混合溶液を約1時間熟成させた。精製した1−プロパノール溶液中50wt%のTergitol 15−S−5 10.2gをケイ酸塩溶液に添加し、撹拌して均質な溶液を得た。水中1.2wt%のテトラメチルアンモニウムヒドロキシド(TMAH)1.4gをこの溶液に添加した。組成物全体を約1〜15分間撹拌した。
テトラエチルオルソシリケート(TEOS)22.5gとメチルトリエトキシシラン(MTES)22.5gをPGPE100gに添加した。この溶液を十分に混合した。精製した9.67gのTritonX−114をケイ酸塩溶液に添加し、撹拌して均質な溶液を得た。別のビンに、水中2.4wt%のテトラメチルアンモニウムヒドロキシド(TMAH)1gを0.1Mの硝酸(HNO3)24gに添加した。HNO3溶液をケイ酸塩溶液に直接添加した。組成物全体を約30分間撹拌した。
開放型のボウル構成において200及び300mmのウェハ上に膜を堆積させるのに用いたスピンコーティングの処方は以下の通りであった。2000rpmで15秒間(加速率5000rpm/秒)、500rpmで8秒間(加速率1000rpm/秒、分配溶液)、2000rpmで6秒間(加速率30000rpm/秒、塗布)、1200rpmで15秒間(加速率3000rpm/秒、乾燥1)、1800rpmで10秒間(加速率30000rpm/秒、乾燥2)、1200rpmで15秒間(加速率3000rpm/秒、上部エッジビード除去(TSEBR))、及び2000rpmで10秒間(加速率1000rpm/秒、最終乾燥)。ウェハは、(自然酸化物若しくは150Aの熱酸化物を有する)被覆されていないSiであることができるか、又は半導体の製造で用いられる通常のCVD膜、例えば、BLACK DIAMOND(商標)(「BD」)、AURORA(商標)、BLOK(商標)、CORAL(商標)、シリカ、炭素をドープしたシリカ、炭化ケイ素、窒化ケイ素、酸窒化ケイ素、酸炭化ケイ素でコーティングされたSiウェハであることができる。表6に与える分配体積によって、200又は300mmのウェハ全体を何ら欠陥なく均一に覆うことができる。
テトラエチルオルソシリケート(TEOS)22.5gと、メチルトリエトキシシラン(MTES)22.5gと、様々な量のPGPEとを含有する5つの例示的な組成物を調製し十分に混合した。以下の例においては、所与の厚さについて組成物中に存在するPGPEの量を表7に与える。次に、精製した9.67gのTriton X−114を各ケイ酸塩溶液に添加し、撹拌して均質な溶液を得た。別のビンに、水中2.4wt%のテトラメチルアンモニウムヒドロキシド(TMAH)1gを0.1Mの硝酸(HNO3)24gに添加した。HNO3溶液をケイ酸塩溶液に直接添加した。組成物全体を約30分間撹拌した。
テトラエチルオルソシリケート(TEOS)22.5gと、メチルトリエトキシシラン(MTES)22.5gと、様々な量のPGPEとを含有する5つの例示的な組成物を調製し十分に混合した。以下の例においては、所与の厚さについて組成物中に存在するPGPEの量を表8に与える。次に、精製した16.1gのTriton X−114を各ケイ酸塩溶液に添加し、撹拌して均質な溶液を得た。別のビンに、水中2.4wt%のテトラメチルアンモニウムヒドロキシド(TMAH)1gを0.1Mの硝酸(HNO3)24gに添加した。HNO3溶液をケイ酸塩溶液に直接添加した。組成物全体を約30分間撹拌した。
溶剤としてPGPEを有する3つの例示的な組成物、例60C、61C及び18を本明細書で記載されるように調製し、それぞれの例に関する回転半径(Rg)の結果を得、表9に与える。回転半径の結果は、35℃でTHFを用いたオンラインの差圧粘度検出と結合した低質量用のゲル浸透クロマトグラフィー(GPC)によって得た。ポリスチレン標準物質20,650質量、ポリエチレングリコール(PEG)2,500質量(販売業者)、PEG4,885質量(販売業者)、ポリメチルメタクリレート(PMMA)4,000質量(販売業者)を含め、幾つかの標準物質を用いてこの技術及び設備を実証した後、本実験試料について回転半径を測定した。表9はまた、GPCと粘度計を結合した技術により各組成物について測定されるポリシリケートポリマーについての結果を与えている(界面活性剤が処方物中に存在する場合には、データは、GRAMS AIソフトウェアパッケージを用いて適合させ、データを分析してケイ酸塩種に関するRgを得た)。表9は、異なる処理段階の際の例示的な組成物18に関するRgの変化をさらに示している。
例示的な膜形成用組成物1、14、18、60B及び61Cを調製し、本明細書で記載されるように、200及び300mmウェハ上での膜の均一性について分析した。200mmのウェハについては、49点のウェハマップを実施し、300mmのウェハについては、85点のウェハマップを実施した。この分析結果を表10に与える。
Claims (59)
- 約3.7以下の誘電率を有するシリカ系材料を生成するための組成物であって、少なくとも1つのシリカ源と、溶剤と、少なくとも1つのポロゲンと、任意選択で触媒と、任意選択で流動添加剤とを含み、該溶剤が、90℃〜170℃の温度で沸騰し、化学式、
a.HO−CHR8−CHR9−CH2−CHR10R11(式中、R8、R9、R10及びR11は、独立して1〜4個の炭素原子のアルキル基又は水素原子であることができる);
b.R12−CO−R13(式中、R12は3〜6個の炭素原子を有する炭化水素基であり;R13は1〜3個の炭素原子を有する炭化水素基である);及びそれらの混合物
によって表される化合物から成る群より選択される、組成物。 - イオン添加剤をさらに含む、請求項1に記載の組成物。
- 前記少なくとも1つのシリカ源が、化学式、
a.RaSi(OR1)4-a(式中、Rは独立して水素原子、フッ素原子又は一価の有機基を表し;R1は一価の有機基を表し;aは1と2から選択された整数である);
b.Si(OR2)4(式中、R2は一価の有機基を表す);
c.R3 b(R4O)3-bSi−R7−Si(OR5)3-cR6 c(式中、R4及びR5は同じか又は異なることができ、それぞれ一価の有機基を表し;R3及びR6は同じか又は異なることができ;b及びcは同じか又は異なることができ、それぞれ0〜3の数であり;R7は酸素原子、フェニレン基若しくは−(CH2)n−で表される基であり、式中、nは1〜6の整数である);及びそれらの混合物
によって表される群より選択された、請求項1に記載の組成物。 - 前記組成物が、該組成物中のSi原子の全数に対して20〜80モル%のSi−C結合を含有する、請求項1に記載の組成物。
- 前記溶剤が、4〜6個の炭素原子を有するアルコール異性体、4〜8個の炭素原子を有するケトン異性体、及びそれらの混合物から選択された、請求項1に記載の組成物。
- 前記溶剤が、1−ペンタノール、2−ペンタノール、2−メチル−1−ブタノール、2−メチル−1−ペンタノール、2−ヘプタノン、4−ヘプタノン、1−tert−ブトキシ−2−エトキシエタン、2−メトキシエチルアセテート、2,3−ジメチル−3−ペンタノール、1−メトキシ−2−ブタノール、4−メチル−2−ペンタノール、1−tert−ブトキシ−2−メトキシエタン、3−メチル−1−ブタノール、2−メチル−1−ブタノール、3−メチル−2−ペンタノール、1,2−ジエトキシエタン、1−ブタノール、3−メチル−2−ブタノール、5−メチル−2−ヘキサノール、及びそれらの混合物から選択された、請求項5に記載の組成物。
- 前記溶剤の合計金属含有量が1ppm未満である、請求項1に記載の組成物。
- 前記溶剤の合計溶解パラメータが15〜25(J/m3)1/2である、請求項1に記載の組成物。
- 前記溶剤の表面張力が20〜50ダイン/cmである、請求項1に記載の組成物。
- 前記溶剤の粘度が、平行板法によって測定された場合に0.5〜7cPである、請求項1に記載の組成物。
- 前記組成物の合計金属含有量が1ppm未満である、請求項1に記載の組成物。
- 前記組成物中のポロゲンの質量とSiO2の質量に対するポロゲンの質量の質量比が0.9〜0.1である、請求項1に記載の組成物。
- 触媒を含み、該触媒が酸性触媒である、請求項1に記載の組成物。
- ニュートン挙動を示す、請求項1に記載の組成物。
- 流動添加剤を含む、請求項1に記載の組成物。
- 前記組成物中の流動添加剤の量が1wt%以下である、請求項15に記載の組成物。
- 前記流動添加剤が100℃以上の温度で沸騰する、請求項15に記載の組成物。
- 前記流動添加剤がポリジメチルシロキサンを含む、請求項15に記載の組成物。
- 前記流動添加剤が、ポリエーテル改質ジメチルシロキサンを含む、請求項15に記載の組成物。
- 前記少なくとも1つのシリカ源が加水分解及び縮合し、加水分解及び縮合生成物の回転半径が5nm以下である、請求項1に記載の組成物。
- 約3.7以下の誘電率を有するシリカ系膜を形成するための組成物であって、少なくとも1つのシリカ源と、溶剤と、任意選択で少なくとも1つのポロゲンと、任意選択で触媒と、流動添加剤とを含む、組成物。
- 前記組成物中の流動添加剤の量が1wt%以下である、請求項21に記載の組成物。
- 前記流動添加剤が100℃以上の温度で沸騰する、請求項21に記載の組成物。
- 前記流動添加剤がポリジメチルシロキサンを含む、請求項21に記載の組成物。
- 前記流動添加剤が、ポリエーテル改質ジメチルシロキサンを含む、請求項21に記載の組成物。
- 3.7以下の誘電率を有するシリカ系膜を形成するための方法であって、
少なくとも1つのシリカ源と、溶剤と、任意選択で少なくとも1つのポロゲンと、任意選択で少なくとも1つの触媒と、任意選択で流動添加剤とを含み、該溶剤が90℃〜170℃の温度で沸騰する組成物を提供すること;
開放型のスピニング・ボウル(spinning bowl)構成及び半閉鎖型のスピニング・ボウル構成から選択されたボウル構成によって基材上に該組成物を堆積させ被覆基材を形成すること;並びに
該被覆基材を硬化して該シリカ系膜を形成することを含む、方法。 - 前記の堆積が開放型のスピニング・ボウル構成によって行われる、請求項26に記載の方法。
- 前記の堆積が半閉鎖型のスピニング・ボウル構成によって行われる、請求項26に記載の方法。
- 前記溶剤が、ヒドロキシル、カルボニル、エステル及びそれらの組み合わせから選択された1つ又は複数の官能基を含む、請求項26に記載の方法。
- 前記溶剤が120〜170℃の温度で沸騰する、請求項26に記載の方法。
- 前記溶剤の合計溶解パラメータが15〜25(J/m3)1/2である、請求項26に記載の方法。
- 前記溶剤の表面張力が20〜50ダイン/cmである、請求項26に記載の方法。
- 前記溶剤の粘度が、平行板法によって測定された場合に0.5〜7cPである、請求項26に記載の方法。
- 前記溶剤が、化学式、
a.HO−CHR8−CHR9−CH2−CHR10R11(式中、R8、R9、R10及びR11は、独立して1〜4個の炭素原子のアルキル基又は水素原子であることができる);
b.R12−CO−R13(式中、R12は3〜6個の炭素原子を有する炭化水素基であり;R13は1〜3個の炭素原子を有する炭化水素基である);及びそれらの混合物
によって表される化合物から成る群より選択される、請求項26に記載の方法。 - 前記溶剤が、4〜6個の炭素原子を有するアルコール異性体、4〜8個の炭素原子を有するケトン異性体、炭化水素が4〜6個の炭素原子を有する直鎖又は分枝の炭化水素酢酸塩、エチレングリコールエーテル、プロピレングリコールエーテル、エチレングリコールエーテルアセテート、プロピレングリコールエーテルアセテート、及びそれらの混合物から選択される、請求項34に記載の方法。
- 前記溶剤が、1−ペンタノール、2−ペンタノール、2−メチル−1−ブタノール、2−メチル−1−ペンタノール、2−エトキシエタノール、2−プロポキシエタノール、1−プロポキシ−2−プロパノール、2−ヘプタノン、4−ヘプタノン、1−tert−ブトキシ−2−エトキシエタン、2−メトキシエチルアセテート、プロピレングリコールメチルエーテルアセテート、ペンチルアセテート、1−tert−ブトキシ−2−プロパノール、2,3−ジメチル−3−ペンタノール、1−メトキシ−2−ブタノール、4−メチル−2−ペンタノール、1−tert−ブトキシ−2−メトキシエタン、3−メチル−1−ブタノール、2−メチル−1−ブタノール、2−メトキシエタノール、3−メチル−2−ペンタノール、1,2−ジエトキシエタン、1−メトキシ−2−プロパノール、1−ブタノール、3−メチル−2−ブタノール、5−メチル−2−ヘキサノール、及びそれらの混合物から選択される、請求項35に記載の方法。
- 前記溶剤が、エチレングリコールエーテル、プロピレングリコールエーテル、エチレングリコールエーテルアセテート、プロピレングリコールエーテルアセテート、及びそれらの混合物から選択される、請求項35に記載の方法。
- 前記少なくとも1つのシリカ源が加水分解及び縮合し、加水分解及び縮合生成物の回転半径が5nm以下である、請求項26に記載の方法。
- 請求項26に記載の方法によって形成された、シリカ系膜。
- Si原子の全数に対して20〜80モル%のSi−C結合を含む、請求項39に記載のシリカ系膜。
- 500ppm以下のアミン又は水酸化物を含む、請求項39に記載のシリカ系膜。
- 細孔を含む、請求項39に記載のシリカ系膜。
- 前記膜が5%以下の膜均一性を示す、請求項39に記載のシリカ系膜。
- 3.7以下の誘電率を有するシリカ系膜を形成するための方法であって、
部分的に加水分解して低沸点溶剤を提供する少なくとも1つのシリカ源と、少なくとも1つの溶剤と、水と、触媒とを含み、該溶剤が、90℃〜170℃の温度で沸騰し、化学式、
a.HO−CHR8−CHR9−CH2−CHR10R11(式中、R8、R9、R10及びR11は、独立して1〜4個の炭素原子のアルキル基又は水素原子であることができる);
b.R12−CO−R13(式中、R12は3〜6個の炭素原子を有する炭化水素基であり;R13は1〜3個の炭素原子を有する炭化水素基である);及びそれらの混合物
によって表される化合物から成る群より選択される組成物を提供すること;
該組成物から該低沸点溶剤の合計モル数の約20〜約75%と該水の合計モル数の20〜80%を除去して減量した組成物を提供すること;
開放型のスピニング・ボウル構成及び半閉鎖型のスピニング・ボウル構成から選択されたボウル構成によって基材上に該減量した組成物を堆積させ被覆基材を形成すること;並びに
該被覆基材を硬化して該シリカ系膜を形成することを含む、方法。 - 前記の堆積に先立ち、前記減量した組成物に溶剤を添加することをさらに含む、請求項44に記載の方法。
- 前記の除去が、30〜100℃の温度に前記組成物を加熱することによって行われる、請求項44に記載の方法。
- 前記の除去が真空蒸留によって行われる、請求項44に記載の方法。
- 前記組成物が少なくとも1つのポロゲンをさらに含む、請求項44に記載の方法。
- 前記の堆積が開放型のスピニング・ボウル構成によって行われる、請求項44に記載の方法。
- 前記の堆積が半閉鎖型のスピニング・ボウル構成によって行われる、請求項44に記載の方法。
- 前記組成物が1ppm以下の金属を含む、請求項44に記載の方法。
- 前記組成物がイオン添加剤をさらに含む、請求項44に記載の方法。
- 前記減量した組成物が、10日以上の周囲温度での貯蔵安定性を有する、請求項44に記載の方法。
- 前記少なくとも1つのシリカ源が加水分解及び縮合し、加水分解及び縮合生成物の回転半径が5nm以下である、請求項44に記載の方法。
- 請求項44に記載の方法によって形成された、シリカ系膜。
- 前記膜が5%以下の膜均一性を示す、請求項55に記載のシリカ系膜。
- 3.7以下の誘電率を有するシリカ系膜を形成するための方法であって、
少なくとも1つのシリカ源と、溶剤と、任意選択で少なくとも1つのポロゲンと、任意選択で触媒と、流動添加剤とを含む組成物を提供すること;
連続流において行われる堆積により基材上に3ml以下の該組成物を堆積させ被覆基材を形成すること;並びに
該シリカ系膜を形成するのに十分な時間1つ又は複数の温度に該被覆基材を硬化することを含む、方法。 - 前記基材が300mmのウェハを含み、該基材の平方面積に対する前記組成物の量が0.00141〜0.0170cc/cm2である、請求項57に記載の方法。
- 前記基材が200mmのウェハを含み、該基材の平方面積に対する前記組成物の量が0.00159〜0.0255cc/cm2である、請求項57に記載の方法。
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2005
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- 2005-02-28 EP EP05004343A patent/EP1577935A2/en not_active Withdrawn
- 2005-03-01 TW TW094106092A patent/TWI275106B/zh not_active IP Right Cessation
- 2005-03-02 JP JP2005057689A patent/JP2005322886A/ja not_active Withdrawn
- 2005-03-02 KR KR1020050017296A patent/KR100613682B1/ko not_active IP Right Cessation
-
2008
- 2008-11-07 JP JP2008286882A patent/JP2009091582A/ja active Pending
-
2009
- 2009-04-07 JP JP2009093317A patent/JP2009191273A/ja active Pending
- 2009-08-10 US US12/538,510 patent/US20090298671A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010540764A (ja) * | 2007-10-09 | 2010-12-24 | ビーエーエスエフ ソシエタス・ヨーロピア | 表面をコーティングするための高官能性多分岐ポリエーテルアミンポリオールの使用方法 |
Also Published As
Publication number | Publication date |
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US20050196974A1 (en) | 2005-09-08 |
KR20060043330A (ko) | 2006-05-15 |
JP2009091582A (ja) | 2009-04-30 |
KR100613682B1 (ko) | 2006-08-22 |
EP1577935A2 (en) | 2005-09-21 |
TW200531087A (en) | 2005-09-16 |
US20090298671A1 (en) | 2009-12-03 |
JP2009191273A (ja) | 2009-08-27 |
TWI275106B (en) | 2007-03-01 |
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