JP2005303025A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2005303025A
JP2005303025A JP2004117549A JP2004117549A JP2005303025A JP 2005303025 A JP2005303025 A JP 2005303025A JP 2004117549 A JP2004117549 A JP 2004117549A JP 2004117549 A JP2004117549 A JP 2004117549A JP 2005303025 A JP2005303025 A JP 2005303025A
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semiconductor
semiconductor region
hetero
punch
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JP5216183B2 (en
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Tetsuya Hayashi
哲也 林
Masakatsu Hoshi
正勝 星
Hideaki Tanaka
秀明 田中
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Nissan Motor Co Ltd
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Nissan Motor Co Ltd
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Priority to US10/898,224 priority patent/US7138668B2/en
Priority to EP04017889.9A priority patent/EP1503425B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be compatible in the effect of improving the breakdown voltage of a first semiconductor region and the effect of preventing a leakage current generated at the end of a second semiconductor region in which the first semiconductor region and a hetero-junction are formed. <P>SOLUTION: The semiconductor device includes an epitaxial region 2 provided on a substrate region 1; and a second conductivity type field effect relaxation region 5 having the hetero-junction made of a first hetero semiconductor region 3 having a different band cap from the epitaxial region 2 through a second conductivity type punch through preventing region 4, in the epitaxial region 2 to touch the end of the junction surface of the epitaxial region 2 and the first hetero semiconductor region 3. At least the punch through preventing region 4 is equivalent to or more in the impurity concentration than the field effect relaxation region 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ヘテロ接合を有する半導体装置に関する。   The present invention relates to a semiconductor device having a heterojunction.

本発明の背景となる従来技術として、本出願人が出願した下記特許文献１がある。
従来技術は、Ｎ＋型の炭化珪素基板領域上にＮ−型のエピタキシャル領域が形成された半導体基体の一主面に、Ｎ型の多結晶シリコン領域が接するように形成されており、エピタキシャル領域とＮ型の多結晶シリコン領域とはヘテロ接合をしている。また、このヘテロ接合の端部に接するようにＰ型の電界緩和領域が形成されている。さらに、Ｎ＋型炭化珪素基板領域の裏面には裏面電極が、多結晶シリコン領域の表面には表面電極が形成されている。 As a prior art as the background of the present invention, there is the following Patent Document 1 filed by the present applicant.
The prior art is formed such that an N-type polycrystalline silicon region is in contact with one main surface of a semiconductor substrate in which an N − -type epitaxial region is formed on an N + -type silicon carbide substrate region. And the N-type polycrystalline silicon region are in a heterojunction. A P-type electric field relaxation region is formed so as to be in contact with the end portion of the heterojunction. Further, a back electrode is formed on the back surface of the N + -type silicon carbide substrate region, and a front electrode is formed on the surface of the polycrystalline silicon region.

上記のような構成の従来技術において、裏面電極をカソード、表面電極をアノードとすると、例えばカソードを接地してアノードに正電位を印加した場合は、ダイオードの順方向特性に相当する導通特性が得られる。逆にアノードに負電位を印加した場合は、ダイオードの逆方向特性に相当する素子特性が得られており、さらにＰ型の電界緩和領域をヘテロ接合の端部に接するように形成することによって、ヘテロ接合の端部にエピタキシャル領域から拡がる電界が集中しないように電界を緩和している。
この従来技術においては、多結晶シリコン領域の不純物濃度や導電型を変えることにより、例えば所定の逆方向特性（それに応じた順方向特性）を有するダイオードを任意に調整できるため、ショットキー接合によるダイオードに比べて、必要に応じて最適な耐圧系に調整できるという利点を持つ。 In the conventional technology having the above configuration, when the back electrode is a cathode and the front electrode is an anode, for example, when a positive potential is applied to the anode with the cathode grounded, a conduction characteristic corresponding to the forward characteristic of the diode is obtained. It is done. On the contrary, when a negative potential is applied to the anode, element characteristics corresponding to the reverse characteristics of the diode are obtained, and further, by forming a P-type electric field relaxation region so as to be in contact with the end of the heterojunction, The electric field is relaxed so that the electric field spreading from the epitaxial region does not concentrate at the end of the heterojunction.
In this prior art, by changing the impurity concentration and conductivity type of the polycrystalline silicon region, for example, a diode having a predetermined reverse characteristic (forward characteristic corresponding thereto) can be arbitrarily adjusted. Compared to the above, there is an advantage that it can be adjusted to an optimum withstand voltage system as required.

特開２００３−３１８４１３号公報JP 2003-318413 A

多結晶シリコン領域とエピタキシャル領域との間で得られる逆方向特性すなわち耐圧を、１次元の接合面で得られる理想的な耐圧に近づけるためは、多面的な形状効果による耐圧低下を極力抑える必要があり、多結晶シリコン領域端部に形成された電界緩和領域の不純物濃度を小さくすることが有効である。
しかしながら、従来構造においては、電界緩和領域の不純物濃度を小さくしてエピタキシャル領域と電界緩和領域との間で保持できる耐圧を高めようとすると、電界緩和領域全域に空乏層が広がり、ヘテロ接合の端部がエピタキシャル領域に広がっていた電界にさらされるため、その端部におけるリーク電流が増大してしまう。すなわち、従来構造においては、電界緩和領域によってエピタキシャル領域の耐圧性能を向上する効果と、多結晶シリコン領域端部で生じる漏れ電流を防止する効果は相反する関係にあった。
本発明は、上記のような従来技術の問題を解決するためになされたものであり、第一の半導体領域の耐圧性能を向上する効果と、該第一の半導体領域とヘテロ接合を形成する第二の半導体領域端部で生じる漏れ電流を防止する効果を両立することが可能な半導体装置を提供することを目的とする。 In order to bring the reverse characteristics obtained between the polycrystalline silicon region and the epitaxial region, that is, the withstand voltage close to the ideal withstand voltage obtained at the one-dimensional joint surface, it is necessary to suppress the withstand voltage drop due to the multifaceted shape effect as much as possible. It is effective to reduce the impurity concentration of the electric field relaxation region formed at the end of the polycrystalline silicon region.
However, in the conventional structure, if the impurity concentration in the electric field relaxation region is decreased to increase the breakdown voltage that can be maintained between the epitaxial region and the electric field relaxation region, a depletion layer spreads over the entire electric field relaxation region, and the heterojunction ends. Since the portion is exposed to the electric field spreading in the epitaxial region, the leakage current at the end portion increases. That is, in the conventional structure, the effect of improving the breakdown voltage performance of the epitaxial region by the electric field relaxation region and the effect of preventing the leakage current generated at the end portion of the polycrystalline silicon region have a conflicting relationship.
The present invention has been made to solve the above-described problems of the prior art, and has an effect of improving the breakdown voltage performance of the first semiconductor region and a first method of forming a heterojunction with the first semiconductor region. An object of the present invention is to provide a semiconductor device capable of achieving both the effects of preventing leakage current generated at the end of the second semiconductor region.

上記課題を解決するために、本発明は、第一導電型の第一の半導体領域と、該第一の半導体領域とはバンドギャップの異なる第二の半導体領域からなるヘテロ接合を有し、該ヘテロ接合面の端部に接するように、前記第一の半導体領域中に第二導電型のパンチスルー防止領域を介して第二導電型の電界緩和領域を有し、少なくとも前記パンチスルー防止領域は前記電界緩和領域よりも不純物濃度が同等以上であるという構成になっている。   In order to solve the above problems, the present invention includes a first semiconductor region of a first conductivity type and a heterojunction composed of a second semiconductor region having a band gap different from that of the first semiconductor region, The first semiconductor region has a second conductivity type electric field relaxation region through a second conductivity type punch-through prevention region so as to be in contact with the end of the heterojunction surface, and at least the punch-through prevention region has The impurity concentration is equal to or higher than that of the electric field relaxation region.

本発明によれば、第一の半導体領域の耐圧性能を向上する効果と、該第一の半導体領域とヘテロ接合を形成する第二の半導体領域端部で生じる漏れ電流を防止する効果を両立することが可能な半導体装置を提供することができる。   According to the present invention, both the effect of improving the breakdown voltage performance of the first semiconductor region and the effect of preventing leakage current generated at the end of the second semiconductor region forming a heterojunction with the first semiconductor region are achieved. It is possible to provide a semiconductor device that can be used.

以下、図面を用いて本発明の実施の形態について詳細に説明する。なお、以下で説明する図面で、同一機能を有するものは同一符号を付け、その繰り返しの説明は省略する。
（第１の実施の形態）
図１は本発明による半導体装置の第１の実施の形態の断面構造を示し、図２はそのチップ表面を示している。図１に示す構造は、例えば図２に示すような半導体チップにおいて、線分Ａ−Ａ’の半導体チップの外周端部の周辺構造として形成される。本実施の形態においては、炭化珪素を基板材料とした半導体装置を一例として説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, components having the same function are denoted by the same reference numerals, and repeated description thereof is omitted.
(First embodiment)
FIG. 1 shows a cross-sectional structure of a first embodiment of a semiconductor device according to the present invention, and FIG. 2 shows a chip surface thereof. The structure shown in FIG. 1 is formed as a peripheral structure of the outer peripheral end portion of the semiconductor chip of line segment AA ′ in the semiconductor chip shown in FIG. 2, for example. In this embodiment, a semiconductor device using silicon carbide as a substrate material will be described as an example.

例えば炭化珪素のポリタイプが４ＨタイプのＮ＋型である基板領域１上にＮ−型のエピタキシャル領域２が形成されている。基板領域１としては、例えば抵抗率が数ｍから数１０ｍΩｃｍ、厚さが２００〜４００μｍ程度のものを用いる。エピタキシャル領域２としては、例えばＮ型の不純物濃度が１×１０１５〜１×１０１８ｃｍ−３、厚みが数〜数１０μｍのものを用いる。なお、本実施の形態では、一例として基板領域１上にエピタキシャル領域２を形成した半導体基体１００で説明するが、抵抗率の大きさに関わらず、基板領域１のみで形成された半導体基体１００を使用してもかまわない。 For example, an N − type epitaxial region 2 is formed on a substrate region 1 of silicon carbide whose polytype is 4H type N + type. As the substrate region 1, for example, a substrate having a resistivity of several meters to several tens of mΩcm and a thickness of about 200 to 400 μm is used. As the epitaxial region 2, for example, an N-type impurity concentration of 1 × 10 15 to 1 × 10 18 cm −3 and a thickness of several to several tens of μm are used. In the present embodiment, the semiconductor substrate 100 in which the epitaxial region 2 is formed on the substrate region 1 will be described as an example. However, the semiconductor substrate 100 formed only in the substrate region 1 is used regardless of the resistivity. You can use it.

エピタキシャル領域２の基板領域１との接合面に対向する主面に接するように、第二の半導体層の一例として炭化珪素よりもバンドギャップの小さい第一のヘテロ半導体領域３が堆積されている。この第一のヘテロ半導体領域３には不純物が導入されており、ここではＰ型でかつ高不純物濃度にドープされている。エピタキシャル領域２と第一のヘテロ半導体領域３の接合部は、炭化珪素と多結晶シリコンのバンドギャップが異なる材料によるヘテロ接合からなっており、その接合界面にはエネルギー障壁が存在している。なお、図２においては、エピタキシャル領域２中に形成される各領域の位置関係を判りやすくするために、第一のヘテロ半導体領域３およびその上に積層される表面金属電極８は省略した構造を示している。   A first hetero semiconductor region 3 having a band gap smaller than that of silicon carbide is deposited as an example of the second semiconductor layer so as to be in contact with the main surface of the epitaxial region 2 facing the bonding surface with the substrate region 1. Impurities are introduced into the first hetero semiconductor region 3, which is P-type and doped at a high impurity concentration. The junction between the epitaxial region 2 and the first hetero semiconductor region 3 is formed of a hetero junction made of materials having different band gaps between silicon carbide and polycrystalline silicon, and an energy barrier exists at the junction interface. In FIG. 2, the first hetero semiconductor region 3 and the surface metal electrode 8 stacked on the first hetero semiconductor region 3 are omitted in order to facilitate understanding of the positional relationship between the regions formed in the epitaxial region 2. Show.

また、本実施の形態においては、エピタキシャル領域２と第一のヘテロ半導体領域３の接合部の外周端部に接するように、Ｐ＋型のパンチスルー防止領域４と、このパンチスルー防止領域４よりは不純物濃度が小さいＰ−型の電界緩和領域５とが形成されている。また、本実施の形態においては、第一のヘテロ半導体領域３とパンチスルー防止領域４とが共に高不純物濃度で形成されており、互いにオーミック接続している。また、本実施の形態においては、図２からも判るように、パンチスルー領域４並びに電界緩和領域５は環状に形成されている。なお、図１においては、パンチスルー防止領域４とエピタキシャル領域２とが接しない場合を例示しているが、パンチスルー防止領域４の一部がエピタキシャル領域２と接していても良い。また、電界緩和領域５の外周には、例えばＰ型のガードリング領域６が形成されている。本実施の形態においては、ガードリング領域６は２本のフローティングリングによって構成された場合を示しているが、特に何本で構成されていてもかまわないし、無くてもかまわない。また、ガードリング領域６の深さについても、電界緩和領域５と同等の場合を示しているが、電界緩和領域５に比べて、深くても浅くてもかまわない。ただし、ガードリング領域６を形成する場合、パンチスルー防止領域４と電界緩和領域５のいずれか、もしくは両方と同時に形成することで、製造工程を簡略化することが可能となる。 In the present embodiment, the P + -type punch-through prevention region 4 and the punch-through prevention region 4 are in contact with the outer peripheral end of the junction between the epitaxial region 2 and the first hetero semiconductor region 3. Is formed with a P − type electric field relaxation region 5 having a low impurity concentration. In the present embodiment, the first hetero semiconductor region 3 and the punch-through prevention region 4 are both formed at a high impurity concentration and are ohmically connected to each other. In the present embodiment, as can be seen from FIG. 2, the punch-through region 4 and the electric field relaxation region 5 are formed in an annular shape. 1 illustrates a case where the punch-through prevention region 4 and the epitaxial region 2 are not in contact with each other, but a part of the punch-through prevention region 4 may be in contact with the epitaxial region 2. Further, for example, a P-type guard ring region 6 is formed on the outer periphery of the electric field relaxation region 5. In the present embodiment, the guard ring region 6 is constituted by two floating rings. However, the guard ring region 6 may be constituted by any number or may be omitted. Further, the depth of the guard ring region 6 is also equivalent to that of the electric field relaxation region 5, but may be deeper or shallower than the electric field relaxation region 5. However, when the guard ring region 6 is formed, the manufacturing process can be simplified by forming either the punch-through prevention region 4 and / or the electric field relaxation region 5 at the same time.

また、本実施の形態においては基板領域１の裏面側には裏面金属電極７が形成されている。裏面金属電極７は基板領域１とオーミック接続されており、金属材料としては、例えばＴｉ（チタン）とその上にＮｉ（ニッケル）を堆積したもの等を用いることができる。
また、第一のヘテロ半導体領域３表面には表面金属電極８が形成されている。表面金属電極８は第一のヘテロ半導体領域３とオーミック接続されており、金属材料としては、例えばＴｉ（チタン）とその上にＡｌ（アルミ）を堆積したもの等を用いることができる。
また、図１においては、第一のヘテロ半導体領域３の端部が層間絶縁膜９に乗り上げるように形成されているが、例えば図３に示すように、特に層間絶縁膜９が形成されていなくてもかまわない。
このように、本実施の形態では表面金属電極８をアノード、裏面金属電極７をカソードとした縦型のダイオードを構成する場合について説明する。 In the present embodiment, a back metal electrode 7 is formed on the back side of the substrate region 1. The back surface metal electrode 7 is ohmically connected to the substrate region 1. As the metal material, for example, Ti (titanium) and Ni (nickel) deposited thereon can be used.
A surface metal electrode 8 is formed on the surface of the first hetero semiconductor region 3. The surface metal electrode 8 is ohmically connected to the first hetero semiconductor region 3, and as the metal material, for example, Ti (titanium) and Al (aluminum) deposited thereon can be used.
Further, in FIG. 1, the end of the first hetero semiconductor region 3 is formed so as to run over the interlayer insulating film 9. However, as shown in FIG. 3, for example, the interlayer insulating film 9 is not particularly formed. It doesn't matter.
As described above, in the present embodiment, a description will be given of a case where a vertical diode having the front surface metal electrode 8 as an anode and the back surface metal electrode 7 as a cathode is configured.

次に、本実施の形態の動作について説明する。
まず、裏面金属電極７を接地電位とし、表面金属電極８に正電位を印加すると、ダイオードは順方向特性を示し、ショットキー接合ダイオードのごとく動作する。つまり、ヘテロ接合部からエピタキシャル領域２並びに第一のヘテロ半導体領域３にそれぞれ広がる内蔵電位の和から決まる電圧降下で電流を流すことができる。例えば本実施の形態においては、ヘテロ接合部からエピタキシャル領域２並びに第一のヘテロ半導体領域３にそれぞれ広がる内蔵電位の和が約１．３Ｖであり、それに応じた電圧降下で順方向電流が流れる。このとき、電界緩和領域５とエピタキシャル領域２との間にも順バイアスが印加されているが、ともに炭化珪素からなるＰＮ接合の内蔵電位が約３Ｖとヘテロ接合部より高いので、ＰＮ接合は動作しない。つまり、本実施の形態においては、順方向動作時においてはモノポーラ型のダイオードとして動作する。 Next, the operation of the present embodiment will be described.
First, when the back surface metal electrode 7 is set to the ground potential and a positive potential is applied to the front surface metal electrode 8, the diode exhibits forward characteristics and operates like a Schottky junction diode. That is, the current can flow with a voltage drop determined by the sum of the built-in potentials extending from the heterojunction portion to the epitaxial region 2 and the first hetero semiconductor region 3. For example, in the present embodiment, the sum of the built-in potentials extending from the heterojunction portion to the epitaxial region 2 and the first hetero semiconductor region 3 is about 1.3 V, and a forward current flows with a voltage drop corresponding thereto. At this time, a forward bias is also applied between the electric field relaxation region 5 and the epitaxial region 2, but since the built-in potential of the PN junction made of silicon carbide is about 3V higher than the heterojunction portion, the PN junction operates. do not do. That is, in the present embodiment, it operates as a monopolar diode during forward operation.

次に、表面金属電極８を接地電位とし、裏面金属電極７に正電位を印加すると、ダイオードは逆方向特性を示し、遮断状態となる。つまり、裏面金属電極７に印加された電位に応じて、エピタキシャル領域２と第一のヘテロ半導体領域３とのヘテロ接合部、並びにエピタキシャル領域２と電界緩和領域５とのＰＮ接合部から空乏層が伸張する。このとき、本実施の形態においては、電界緩和領域５の不純物濃度を小さくしているため、エピタキシャル領域２側だけでなく、電界緩和領域５側にも空乏層が伸びるため、電界緩和領域５とエピタキシャル領域２との接合部で最大電界となる外周端部の曲率が緩和され、平坦部での耐圧により近づけることができる。   Next, when the front surface metal electrode 8 is set to the ground potential and a positive potential is applied to the back surface metal electrode 7, the diode exhibits reverse characteristics and enters a cut-off state. That is, a depletion layer is formed from the heterojunction between the epitaxial region 2 and the first hetero semiconductor region 3 and the PN junction between the epitaxial region 2 and the electric field relaxation region 5 according to the potential applied to the back surface metal electrode 7. Stretch. At this time, in this embodiment, since the impurity concentration of the electric field relaxation region 5 is reduced, the depletion layer extends not only on the epitaxial region 2 side but also on the electric field relaxation region 5 side. The curvature of the outer peripheral end portion that becomes the maximum electric field at the junction with the epitaxial region 2 is relaxed, and can be made closer to the breakdown voltage at the flat portion.

このとき、従来構造では、本実施の形態のように電界緩和領域５の不純物濃度を小さくした場合、電界緩和領域５が全域空乏化すると、第一のヘテロ半導体領域３に空乏層が到達し、第一のヘテロ半導体領域３の端部での漏れ電流が流れ出す。特に、本実施の形態のように、第一のヘテロ半導体領域３として、結晶粒のかたまりである多結晶シリコンを用いた場合、外周端部において電界にさらされてしまうと、単一金属のショットキー金属や単結晶のシリコンなどに比べて、漏れ電流が急激に増大してしまう。しかし、本実施の形態においては、第一のヘテロ半導体領域３に接するように、パンチスルー防止領域４が形成されているため、空乏層の到達を防ぐことができる。つまり、本実施の形態においては、エピタキシャル領域２での耐圧を向上させつつ、第一のヘテロ半導体領域３の端部でのリーク電流の増大を防ぐことができるため、従来に比べて高い耐圧（遮断性）を実現することができる。   At this time, in the conventional structure, when the impurity concentration of the electric field relaxation region 5 is reduced as in the present embodiment, when the entire electric field relaxation region 5 is depleted, the depletion layer reaches the first hetero semiconductor region 3, Leakage current starts flowing at the end of the first hetero semiconductor region 3. In particular, when polycrystalline silicon that is a cluster of crystal grains is used as the first hetero semiconductor region 3 as in the present embodiment, if it is exposed to an electric field at the outer peripheral edge, a single metal shot Compared with key metals and single crystal silicon, the leakage current increases rapidly. However, in this embodiment, since the punch-through prevention region 4 is formed so as to be in contact with the first hetero semiconductor region 3, it is possible to prevent the depletion layer from reaching. That is, in the present embodiment, it is possible to prevent an increase in leakage current at the end portion of the first hetero semiconductor region 3 while improving the breakdown voltage in the epitaxial region 2, so that a higher breakdown voltage ( (Blocking property) can be realized.

さらに、本実施の形態においては、裏面金属電極７にさらに高い電位が印加され、エピタキシャル領域２と電界緩和領域５との間でアバランシェ降伏が生じた際に、生じた正孔はパンチスルー防止領域４を介してオーミック接続した第一のヘテロ半導体領域３に低抵抗で速やかに排出される。つまり、環状に形成されたパンチスルー防止領域４の外周全域でほぼ均一にアバランシェ降伏が起こるので、アバランシェ降伏電流の集中が起こりにくく、アバランシェ耐量を向上することができる。   Furthermore, in the present embodiment, when a higher potential is applied to the back surface metal electrode 7 and an avalanche breakdown occurs between the epitaxial region 2 and the electric field relaxation region 5, the generated holes are removed from the punch-through prevention region. The first hetero semiconductor region 3 that is ohmic-connected through 4 is quickly discharged with low resistance. That is, since the avalanche breakdown occurs almost uniformly in the entire outer periphery of the punch-through prevention region 4 formed in an annular shape, the concentration of avalanche breakdown current hardly occurs and the avalanche resistance can be improved.

このように、本実施の形態のような構造にすることによって、順方向特性は従来技術と同様の効果を有するのに加えて、逆方向特性の耐圧を向上することができる。なお、図１においては、図２のヘテロ半導体素子の中央部に形成されるヘテロダイオードが、外周部と同じＰ型高不純物濃度の第一のヘテロ半導体領域３で形成されている場合で説明してきたが、図４に示すように例えばＮ型の第二のヘテロ半導体領域１０が形成されていても良い。つまり、第二のヘテロ半導体領域１０は第一のヘテロ半導体領域３と導電型もしくは不純物濃度が異なっていても良い。   As described above, with the structure as in the present embodiment, the forward characteristics have the same effect as the conventional technique, and the breakdown voltage of the reverse characteristics can be improved. In FIG. 1, the case where the hetero diode formed in the central portion of the hetero semiconductor element of FIG. 2 is formed of the first hetero semiconductor region 3 having the same P-type high impurity concentration as the outer peripheral portion has been described. However, as shown in FIG. 4, for example, an N-type second hetero semiconductor region 10 may be formed. That is, the second hetero semiconductor region 10 may be different in conductivity type or impurity concentration from the first hetero semiconductor region 3.

以上、本実施の形態ではパンチスルー防止領域４をヘテロ半導体素子の外周部に用いる場合を例に説明してきたが、例えば、図５に示すように、ヘテロ半導体素子の外周部以外にも、第一のヘテロ半導体領域３もしくは第二のヘテロ半導体領域（１０）の端部が形成された部分に接するように、パンチスルー防止領域４を形成することで、第一のヘテロ半導体領域３もしくは第二のヘテロ半導体領域（１０）の端部における遮断性能を向上することが可能である。   As described above, in the present embodiment, the case where the punch-through prevention region 4 is used in the outer peripheral portion of the hetero semiconductor element has been described as an example. For example, as shown in FIG. By forming the punch-through prevention region 4 so as to be in contact with the end portion of one hetero semiconductor region 3 or the second hetero semiconductor region (10), the first hetero semiconductor region 3 or the second hetero semiconductor region 3 or the second hetero semiconductor region 3 or the second hetero semiconductor region 3 is formed. It is possible to improve the cutoff performance at the end of the hetero semiconductor region (10).

（第２の実施の形態）
図６は本発明による半導体装置の第２の実施の形態を示している。図６は第１の実施の形態の図１に対応した断面図である。本実施の形態においては、図１と同様の動作をする部分の説明は省略し、異なる特徴について詳しく説明する。
図６は図１で示したヘテロ接合ダイオードのヘテロ接合界面の一部に、ゲート絶縁膜１１を介してゲート電極１２を形成した、所謂トランジスタを構成している。図６に示すように、本実施の形態においてはエピタキシャル領域２に溝を形成した構成としているが、溝を形成しないいわゆるプレーナ型の構成でもかまわない。 (Second Embodiment)
FIG. 6 shows a second embodiment of the semiconductor device according to the present invention. FIG. 6 is a cross-sectional view corresponding to FIG. 1 of the first embodiment. In the present embodiment, the description of the same operation as in FIG. 1 is omitted, and different features will be described in detail.
FIG. 6 shows a so-called transistor in which a gate electrode 12 is formed on a part of the heterojunction interface of the heterojunction diode shown in FIG. As shown in FIG. 6, in this embodiment, a groove is formed in the epitaxial region 2, but a so-called planar type structure in which no groove is formed may be used.

次に、本実施の形態の動作について説明する。
本実施の形態においては、例えば表面金属電極８を接地し、裏面金属電極７に正電位を印加して使用する。
まず、ゲート電極１２を例えば接地電位もしくは負電位とした場合、遮断状態を保持する。すなわち、第一のヘテロ半導体領域３とエピタキシャル領域２とのヘテロ接合界面には、それぞれ伝導電子に対するエネルギー障壁が形成されているためである。このとき、本実施の形態においては、第１の実施の形態で説明したように、第一のヘテロ半導体領域３の端部における漏れ電流特性が発生しないように、パンチスルー防止領域４を形成し、かつエピタキシャル領域２の平坦部の耐圧に近づけるように、電界緩和領域５が低不純物濃度で形成されているため、より高い遮断性を保持できる。 Next, the operation of the present embodiment will be described.
In the present embodiment, for example, the front surface metal electrode 8 is grounded, and a positive potential is applied to the back surface metal electrode 7 for use.
First, when the gate electrode 12 is set to a ground potential or a negative potential, for example, the cutoff state is maintained. That is, energy barriers for conduction electrons are formed at the heterojunction interface between the first hetero semiconductor region 3 and the epitaxial region 2. At this time, in the present embodiment, as described in the first embodiment, the punch-through prevention region 4 is formed so that the leakage current characteristic at the end of the first hetero semiconductor region 3 does not occur. In addition, since the electric field relaxation region 5 is formed with a low impurity concentration so as to approach the breakdown voltage of the flat portion of the epitaxial region 2, it is possible to maintain higher blocking performance.

次に、遮断状態から導通状態へと転じるべくゲート電極１２に正電位を印加した場合、ゲート絶縁膜１１を介して第一のヘテロ半導体領域３とエピタキシャル領域２が接するヘテロ接合界面までゲート電界が及ぶため、ゲート電極１２近傍の第一のヘテロ半導体領域３並びにエピタキシャル領域２には伝導電子の反転層が形成される。すなわち、ゲート電極１２近傍の第一のヘテロ半導体領域３とエピタキシャル領域２との接合界面における第一のヘテロ半導体領域３側のポテンシャルが押し下げられ、かつ、エピタキシャル領域２側のエネルギー障壁が急峻になることからエネルギー障壁中を伝導電子が導通することが可能となる。図６においては一例として、ゲート絶縁膜１１に接するように第一のヘテロ半導体領域３を形成しているが、図７に示すように、ゲート絶縁膜１１と第一のヘテロ半導体領域３との間に、第二のヘテロ半導体領域１０を介していても良い。第二のヘテロ半導体領域１０の導電型並びに不純物濃度はいずれでも良いが、例えばＮ型の高不純物濃度とすれば、電流が導通するチャネル部がより蓄積しやすく、駆動力が向上する。   Next, when a positive potential is applied to the gate electrode 12 to change from the cutoff state to the conduction state, the gate electric field is applied to the heterojunction interface where the first hetero semiconductor region 3 and the epitaxial region 2 are in contact via the gate insulating film 11. Therefore, an inversion layer of conduction electrons is formed in the first hetero semiconductor region 3 and the epitaxial region 2 in the vicinity of the gate electrode 12. That is, the potential on the first hetero semiconductor region 3 side at the junction interface between the first hetero semiconductor region 3 near the gate electrode 12 and the epitaxial region 2 is pushed down, and the energy barrier on the epitaxial region 2 side becomes steep. Therefore, conduction electrons can be conducted through the energy barrier. In FIG. 6, as an example, the first hetero semiconductor region 3 is formed so as to be in contact with the gate insulating film 11, but as illustrated in FIG. 7, the gate insulating film 11 and the first hetero semiconductor region 3 are separated from each other. The second hetero semiconductor region 10 may be interposed therebetween. The conductivity type and impurity concentration of the second hetero semiconductor region 10 may be any. However, for example, when the N-type high impurity concentration is used, the channel portion through which current is conducted is more easily accumulated and the driving force is improved.

次に、導通状態から遮断状態に移行すべく、再びゲート電極１２を接地電位とすると、第一のヘテロ半導体領域３並びにエピタキシャル領域２のヘテロ接合界面に形成されていた伝導電子の反転状態が解除され、エネルギー障壁中のトンネリングが止まる。そして、第一のヘテロ半導体領域３からエピタキシャル領域２への伝導電子の流れが止まり、さらにエピタキシャル領域２中にあった伝導電子は炭化珪素基板１に流れ、枯渇すると、エピタキシャル領域２側にはヘテロ接合部から空乏層が広がり遮断状態となる。
また、本実施の形態においては、従来構造と同様に、例えば表面金属電極８を接地し、裏面金属電極７に負電位が印加された逆方向導通（還流動作）も可能である。
例えば表面金属電極８並びにゲート電極１２を接地電位とし、裏面金属電極７に所定の正電位が印加されると、伝導電子に対するエネルギー障壁は消滅し、エピタキシャル領域２側から第一のヘテロ半導体領域３側に伝導電子が流れ、逆導通状態となる。このとき、正孔の注入はなく、伝導電子のみで導通するため、逆導通状態から遮断状態に移行する際の逆回復電流による損失も小さい。なお、上述したゲート電極１２を接地にせずに制御電極として使用する場合も可能である。 Next, when the gate electrode 12 is set to the ground potential again to shift from the conductive state to the cut-off state, the inversion state of the conduction electrons formed at the heterojunction interface of the first hetero semiconductor region 3 and the epitaxial region 2 is released. And tunneling in the energy barrier stops. Then, the flow of conduction electrons from the first hetero semiconductor region 3 to the epitaxial region 2 stops, and further, the conduction electrons in the epitaxial region 2 flow to the silicon carbide substrate 1 and when they are depleted, the epitaxial region 2 side becomes heterogeneous. A depletion layer spreads from the junction and enters a cut-off state.
In the present embodiment, similarly to the conventional structure, for example, reverse conduction (reflux operation) in which the front surface metal electrode 8 is grounded and a negative potential is applied to the rear surface metal electrode 7 is also possible.
For example, when the front surface metal electrode 8 and the gate electrode 12 are set to the ground potential and a predetermined positive potential is applied to the back surface metal electrode 7, the energy barrier to the conduction electrons disappears, and the first hetero semiconductor region 3 from the epitaxial region 2 side disappears. Conduction electrons flow to the side, and a reverse conduction state is established. At this time, since there is no injection of holes and conduction is made only with conduction electrons, loss due to reverse recovery current when shifting from the reverse conduction state to the cutoff state is small. Note that the above-described gate electrode 12 may be used as a control electrode without being grounded.

（第３の実施の形態）
図８は本発明による半導体装置の第３の実施の形態を示している。図８は第２の実施の形態の図６に対応した断面図である。本実施の形態においては、図６と同様の動作をする部分の説明は省略し、異なる特徴について詳しく説明する。
第２の実施の形態においては、一例としてヘテロ接合部をゲート駆動するスイッチの一部に、第２の実施の形態で説明した漏れ電流を低減する構成を使用した場合を説明してきたが、図８のようにヘテロ接合部をスイッチ素子の一部に内蔵された還流ダイオードとして使用しても良い。図８は炭化珪素からなるＭＯＳＦＥＴにヘテロダイオードを内蔵した構成をしている。つまり、炭化珪素からなる第一導電型の基板領域２１並びにエピタキシャル領域２２からなる半導体基体１００に、第二導電型のベース領域２３と第一導電型のソース領域２４が形成されており、エピタキシャル領域２２並びにベース領域２３並びにソース領域２４に接するようにゲート絶縁膜２５を介してゲート電極２６が形成されている。また、ベース領域２３とソース領域２４はソース電極２７に接続されており、基板領域２１はドレイン電極２８に接続されている。さらに、エピタキシャル領域２２とはバンドギャップが異なり、例えば多結晶シリコンからなる第一のヘテロ半導体領域２９がエピタキシャル領域２２とヘテロ接合を形成するように配置されている。なお、第一のヘテロ半導体領域２９はソース電極２７に接続されている。さらに、本実施の形態においては、第一のヘテロ半導体領域２９の端部に接するようにパンチスルー防止領域３０と電界緩和領域３１が形成されている。なお、図８においては、電界緩和領域３１とベース領域２３を同時に形成し、共通化した構造を示しているが、別構造であっても良い。このように、ＭＯＳＦＥＴの内蔵還流ダイオードとしてヘテロ接合を形成した場合においてもパンチスルー防止領域３０を形成することによって、漏れ電流を防止することができる。したがって、第２の実施の形態と同様に、遮断状態におけるヘテロ接合部での漏れ電流を低減することができるため、遮断性が高い半導体装置を提供することができる。
以上のように、いずれにしても、トランジスタを構成する各部において、少なくとも一部でも本実施の形態で説明した例えば多結晶シリコンからなる第一のヘテロ半導体領域２９の端部にパンチスルー防止領域３０が含まれていれば、漏れ電流低減の効果をもたらすことが可能である。 (Third embodiment)
FIG. 8 shows a third embodiment of the semiconductor device according to the present invention. FIG. 8 is a cross-sectional view corresponding to FIG. 6 of the second embodiment. In the present embodiment, the description of the same operation as in FIG. 6 is omitted, and different features will be described in detail.
In the second embodiment, as an example, the case where the configuration for reducing the leakage current described in the second embodiment is used as a part of the switch for driving the gate of the heterojunction has been described. As shown in FIG. 8, the heterojunction may be used as a freewheeling diode built in a part of the switch element. FIG. 8 shows a structure in which a hetero diode is built in a MOSFET made of silicon carbide. That is, the second conductivity type base region 23 and the first conductivity type source region 24 are formed in the semiconductor substrate 100 composed of the first conductivity type substrate region 21 and the epitaxial region 22 made of silicon carbide. A gate electrode 26 is formed through a gate insulating film 25 so as to be in contact with the base 22, the base region 23, and the source region 24. The base region 23 and the source region 24 are connected to the source electrode 27, and the substrate region 21 is connected to the drain electrode 28. Further, the band gap is different from that of the epitaxial region 22, and the first hetero semiconductor region 29 made of, for example, polycrystalline silicon is arranged so as to form a hetero junction with the epitaxial region 22. Note that the first hetero semiconductor region 29 is connected to the source electrode 27. Further, in the present embodiment, the punch-through prevention region 30 and the electric field relaxation region 31 are formed so as to be in contact with the end portion of the first hetero semiconductor region 29. In FIG. 8, the electric field relaxation region 31 and the base region 23 are formed at the same time and a common structure is shown, but another structure may be used. Thus, even when a heterojunction is formed as a built-in free-wheeling diode of a MOSFET, leakage current can be prevented by forming the punch-through prevention region 30. Therefore, as in the second embodiment, since the leakage current at the heterojunction portion in the cut-off state can be reduced, a semiconductor device with high cut-off performance can be provided.
As described above, in any case, in each part constituting the transistor, at least a part of the first hetero semiconductor region 29 made of, for example, polycrystalline silicon described in the present embodiment is at least partly described. Is included, it is possible to bring about an effect of reducing leakage current.

なお、図８においては、ヘテロ半導体素子の中央部に形成されるヘテロダイオードが、外周部と同じＰ型高不純物濃度の第一のヘテロ半導体領域２９で形成されている場合で説明してきたが、図９に示すように例えばＮ型の第二のヘテロ半導体領域３２が形成されていても良い。つまり、第二のヘテロ半導体領域３２は第一のヘテロ半導体領域２９と導電型もしくは不純物濃度が異なっていても良い。   In FIG. 8, the hetero diode formed in the central portion of the hetero semiconductor element has been described as being formed by the first hetero semiconductor region 29 having the same P-type high impurity concentration as the outer peripheral portion. As shown in FIG. 9, for example, an N-type second hetero semiconductor region 32 may be formed. That is, the second hetero semiconductor region 32 may be different in conductivity type or impurity concentration from the first hetero semiconductor region 29.

以上説明したように第１の実施の形態から第３の実施の形態では、エピタキシャル領域２（もしくは２２）と、該エピタキシャル領域２（もしくは２２）とはバンドギャップの異なる第一のヘテロ半導体領域３（もしくは２９）からなるヘテロ接合を有し、エピタキシャル領域２（もしくは２２）と第一のヘテロ半導体領域３（もしくは２９）との接合面の端部に接するように、エピタキシャル領域２（もしくは２２）中に第二導電型のパンチスルー防止領域４（もしくは３０）を介して第二導電型の電界緩和領域５（もしくは３１）を有し、少なくともパンチスルー防止領域４（もしくは３０）は電界緩和領域５（もしくは３１）よりも不純物濃度が同等以上になっている。このような構成によりエピタキシャル領域２（もしくは２２）の耐圧性能を向上する効果と、多結晶シリコン領域からなる第一のヘテロ半導体領域３（もしくは２９）の端部で生じる漏れ電流を防止する効果を両立することが可能であり、遮断時の特性を向上することができる。   As described above, in the first to third embodiments, the epitaxial region 2 (or 22) and the first hetero semiconductor region 3 having a different band gap from the epitaxial region 2 (or 22). The epitaxial region 2 (or 22) has a heterojunction made of (or 29) and is in contact with the end of the junction surface between the epitaxial region 2 (or 22) and the first hetero semiconductor region 3 (or 29). It has a second conductivity type electric field relaxation region 5 (or 31) through a second conductivity type punch through prevention region 4 (or 30), and at least the punch through prevention region 4 (or 30) is an electric field relaxation region. The impurity concentration is equal to or higher than 5 (or 31). With such a configuration, there is an effect of improving the breakdown voltage performance of the epitaxial region 2 (or 22) and an effect of preventing leakage current generated at the end of the first hetero semiconductor region 3 (or 29) made of the polycrystalline silicon region. It is possible to achieve both, and the characteristics at the time of interruption can be improved.

また、少なくともエピタキシャル領域２（もしくは２２）と接する第一のヘテロ半導体領域３（もしくは２９）の端部が第二導電型になっている。このような構成によりエピタキシャル領域２（もしくは２２）でアバランシェ降伏が起こった場合、生じた少数キャリアをパンチスルー防止領域４（もしくは３０）並びに第一のヘテロ半導体領域３（もしくは２９）を通して、速やかに排出できるため、アバランシェ耐量が向上する。   Further, at least an end portion of the first hetero semiconductor region 3 (or 29) in contact with the epitaxial region 2 (or 22) is of the second conductivity type. When an avalanche breakdown occurs in the epitaxial region 2 (or 22) by such a configuration, the generated minority carriers are promptly passed through the punch-through prevention region 4 (or 30) and the first hetero semiconductor region 3 (or 29). Since it can be discharged, the avalanche resistance is improved.

また、少なくともエピタキシャル領域２（もしくは２２）と接する第一のヘテロ半導体領域３（もしくは２９）の端部が、パンチスルー防止領域４（もしくは３０）とオーミック接続している。このような構成によりエピタキシャル領域２（もしくは２２）でアバランシェ降伏が起こった場合、生じた少数キャリアをパンチスルー防止領域４（もしくは３０）並びに第一のヘテロ半導体領域３（もしくは２９）を通して、さらに速やかに排出できるため、さらにアバランシェ耐量が向上する。   Further, at least an end portion of the first hetero semiconductor region 3 (or 29) in contact with the epitaxial region 2 (or 22) is in ohmic contact with the punch-through prevention region 4 (or 30). When an avalanche breakdown occurs in the epitaxial region 2 (or 22) by such a configuration, the generated minority carriers are further promptly passed through the punch-through prevention region 4 (or 30) and the first hetero semiconductor region 3 (or 29). Therefore, the avalanche resistance is further improved.

また、エピタキシャル領域２（もしくは２２）を含んでなる半導体基体１００と、半導体基体１００の一主面に接して該半導体基体１００とはバンドギャップの異なる第二のヘテロ半導体領域１０（図４）とを有し、半導体基体１００と第二のヘテロ半導体領域１０との接合端部の少なくとも最外周部近傍において、第一のヘテロ半導体領域３（もしくは２９）並びにパンチスルー防止領域４（もしくは３０）並びに電界緩和領域５（もしくは３１）がそれぞれ形成されている。このような構成により前述の構成をヘテロ半導体素子の外周部に適用することによって、具体的な構造として前述の効果が得られる。   Also, a semiconductor substrate 100 including the epitaxial region 2 (or 22), and a second hetero semiconductor region 10 (FIG. 4) in contact with one main surface of the semiconductor substrate 100 and having a different band gap from the semiconductor substrate 100 The first hetero semiconductor region 3 (or 29), the punch-through prevention region 4 (or 30) and at least the vicinity of the outermost peripheral portion of the junction end between the semiconductor substrate 100 and the second hetero semiconductor region 10 and Electric field relaxation regions 5 (or 31) are respectively formed. By applying the above-described configuration to the outer peripheral portion of the hetero semiconductor element with such a configuration, the above-described effects can be obtained as a specific structure.

また、第２および第３の実施の形態では、第一のヘテロ半導体領域３（もしくは２９）（もしくは図４の第二のヘテロ半導体領域１０）と半導体基体１００との接合部の一部にゲート絶縁膜１１または２５を介してゲート電極１２または２６が形成されている。このような構成により前述の構成を三端子ヘテロ半導体素子の外周部に適用することによって、具体的な構造として前述の効果が得られる。
また、第３の実施の形態では、エピタキシャル領域２２を含んでなる半導体基体１００と、該半導体基体１００の所定領域に、第二導電型のベース領域２３並びに第一導電型のソース領域２４とを有し、少なくとも半導体基体１００並びにソース領域２４に接するようにゲート絶縁膜２５を介してゲート電極２６を有し、半導体基体１００と第一のヘテロ半導体領域２９との接合端部の少なくとも最外周部近傍において、パンチスルー防止領域３０並びに電界緩和領域３１がそれぞれ形成されている。このような構成により前述の構成を三端子半導体素子の内蔵ダイオードとして適用することによって、具体的な構造として前述の効果が得られる。 In the second and third embodiments, a gate is formed at a part of the junction between the first hetero semiconductor region 3 (or 29) (or the second hetero semiconductor region 10 in FIG. 4) and the semiconductor substrate 100. A gate electrode 12 or 26 is formed via the insulating film 11 or 25. By applying the above-described configuration to the outer peripheral portion of the three-terminal hetero semiconductor element with such a configuration, the above-described effects can be obtained as a specific structure.
In the third embodiment, the semiconductor substrate 100 including the epitaxial region 22, and the second conductivity type base region 23 and the first conductivity type source region 24 are provided in a predetermined region of the semiconductor substrate 100. A gate electrode 26 through a gate insulating film 25 so as to be in contact with at least the semiconductor substrate 100 and the source region 24, and at least an outermost peripheral portion of a junction end portion between the semiconductor substrate 100 and the first hetero semiconductor region 29. In the vicinity, a punch-through prevention region 30 and an electric field relaxation region 31 are formed. By applying the above-described configuration as a built-in diode of a three-terminal semiconductor element with such a configuration, the above-described effects can be obtained as a specific structure.

また、第３の実施の形態では、エピタキシャル領域２２を含んでなる半導体基体１００と、該半導体基体１００の所定領域に、第二導電型のベース領域２３並びに第一導電型のソース領域２４とを有し、少なくとも半導体基体１００並びにソース領域２４に接するようにゲート絶縁膜２５を介してゲート電極２６を有し、半導体基体１００に接して該半導体基体１００とはバンドギャップの異なる第二のヘテロ半導体領域３２（図９）を有し、半導体基体１００と第二のヘテロ半導体領域１０との接合端部の少なくとも最外周部近傍において、第一のヘテロ半導体領域２９並びにパンチスルー防止領域３０並びに電界緩和領域３１がそれぞれ形成されている。このような構成により前述の構成を三端子半導体素子の内蔵ダイオードとして適用することによって、具体的な構造として前述の効果が得られる。   In the third embodiment, the semiconductor substrate 100 including the epitaxial region 22, and the second conductivity type base region 23 and the first conductivity type source region 24 are provided in a predetermined region of the semiconductor substrate 100. A second hetero semiconductor having a gate electrode 26 through a gate insulating film 25 so as to be in contact with at least the semiconductor substrate 100 and the source region 24 and having a band gap different from that of the semiconductor substrate 100 The first hetero semiconductor region 29, the punch-through prevention region 30, and the electric field relaxation are provided at least in the vicinity of the outermost peripheral portion of the junction end between the semiconductor substrate 100 and the second hetero semiconductor region 10. Regions 31 are respectively formed. By applying the above-described configuration as a built-in diode of a three-terminal semiconductor element with such a configuration, the above-described effects can be obtained as a specific structure.

また、第１から第３の実施の形態では、エピタキシャル領域２（もしくは２２）が炭化珪素からなっている。このような構成により一般的な材料で容易に実現可能である。
さらに、第一のヘテロ半導体領域３（もしくは２９）、第二のヘテロ半導体領域１０が単結晶シリコン、アモルファスシリコン、多結晶シリコンの少なくともいずれかからなっている。このような構成により一般的な材料かつプロセスで容易に実現可能である。
なお、上記実施の形態のエピタキシャル領域２、２２が特許請求の範囲の第一の半導体領域に、第一のヘテロ半導体領域３、２９が第二の半導体領域に、第二のヘテロ半導体領域１０がヘテロ半導体領域に相当する。 In the first to third embodiments, epitaxial region 2 (or 22) is made of silicon carbide. Such a configuration can be easily realized with a general material.
Further, the first hetero semiconductor region 3 (or 29) and the second hetero semiconductor region 10 are made of at least one of single crystal silicon, amorphous silicon, and polycrystalline silicon. Such a configuration can be easily realized by a general material and process.
The epitaxial regions 2 and 22 of the above-described embodiment are the first semiconductor region of the claims, the first hetero semiconductor regions 3 and 29 are the second semiconductor region, and the second hetero semiconductor region 10 is the second semiconductor region 10. It corresponds to a hetero semiconductor region.

なお、第１の実施の形態から第３の実施の形態においては、炭化珪素を基板材料とした半導体装置を一例として説明したが、基板材料はシリコン、シリコンゲルマン、窒化ガリウム、ダイヤモンドなどその他の半導体材料でもかまわない。また、全ての実施の形態において、炭化珪素のポリタイプとして４Ｈタイプを用いて説明したが、６Ｈ、３Ｃ等その他のポリタイプでも構わない。また、全ての実施の形態において、裏面金属電極７（もしくはドレイン電極２８）と表面金属電極８（もしくはソース電極２７）とをエピタキシャル領域２（もしくはエピタキシャル領域２２）を挟んで対向するように配置し、両者間の電流を縦方向に流す所謂縦型構造で説明してきたが、例えば裏面金属電極７（もしくはドレイン電極２８）と表面金属電極８（もしくはソース電極２７）とを同一主面上に配置し、両者間の電流を横方向に流す所謂横型構造であってもかまわない。また、第一のヘテロ半導体領域３、２９、第二のヘテロ半導体領域１０に用いる材料として多結晶シリコンを用いた例で説明したが、炭化珪素とヘテロ接合を形成する半導体材料（例えば、単結晶シリコン、ゲルマニウム、シリコンゲルマンなど）であれば、各々別々の材料でも、どの材料でもかまわない。また、一例として、エピタキシャル領域２、２２としてＮ型の炭化珪素を、第一のヘテロ半導体領域３、２９としてＰ型の多結晶シリコンを用いて説明しているが、Ｎ型の炭化珪素とＮ型の多結晶シリコン、Ｐ型の炭化珪素とＮ型の多結晶シリコン、Ｐ型の炭化珪素とＰ型の多結晶シリコンという組み合わせでもよい。
さらに本発明の主旨を逸脱しない範囲での変形を含むことは言うまでもない。
なお、以上説明した実施の形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記実施の形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。 In the first to third embodiments, the semiconductor device using silicon carbide as the substrate material has been described as an example. However, the substrate material may be other semiconductors such as silicon, silicon germane, gallium nitride, and diamond. Materials can be used. In all the embodiments, the 4H type is used as the polytype of silicon carbide, but other polytypes such as 6H and 3C may be used. In all the embodiments, the back surface metal electrode 7 (or the drain electrode 28) and the front surface metal electrode 8 (or the source electrode 27) are arranged to face each other with the epitaxial region 2 (or the epitaxial region 22) interposed therebetween. The so-called vertical structure in which the current between them is passed in the vertical direction has been described. For example, the back surface metal electrode 7 (or drain electrode 28) and the front surface metal electrode 8 (or source electrode 27) are arranged on the same main surface. However, a so-called horizontal structure in which a current between the two flows in the horizontal direction may be used. Moreover, although the example using polycrystalline silicon as the material used for the first hetero semiconductor regions 3 and 29 and the second hetero semiconductor region 10 has been described, a semiconductor material that forms a heterojunction with silicon carbide (for example, a single crystal) As long as it is silicon, germanium, silicon germane, etc., each material may be a separate material. Further, as an example, the description has been given using N-type silicon carbide as the epitaxial regions 2 and 22 and P-type polycrystalline silicon as the first hetero semiconductor regions 3 and 29. However, N-type silicon carbide and N Combinations of type polycrystalline silicon, P type silicon carbide and N type polycrystalline silicon, P type silicon carbide and P type polycrystalline silicon may be used.
Further, it goes without saying that modifications are included within the scope not departing from the gist of the present invention.
The embodiment described above is described in order to facilitate understanding of the present invention, and is not described in order to limit the present invention. Therefore, each element disclosed in the above embodiment includes all design changes and equivalents belonging to the technical scope of the present invention.

本発明の第１の実施の形態を示す断面図である。It is sectional drawing which shows the 1st Embodiment of this invention. 本発明の第１の実施の形態を有するチップ表面図である。It is a chip | tip surface view which has the 1st Embodiment of this invention. 本発明の第１の別の実施の形態を示す断面図である。It is sectional drawing which shows the 1st another embodiment of this invention. 本発明の第１のさらに別の実施の形態を示す断面図である。It is sectional drawing which shows the 1st further another embodiment of this invention. 本発明の第１のさらに別の実施の形態を示す断面図である。It is sectional drawing which shows the 1st further another embodiment of this invention. 本発明の第２の実施の形態を示す断面図である。It is sectional drawing which shows the 2nd Embodiment of this invention. 本発明の第２の別の実施の形態を示す断面図である。It is sectional drawing which shows the 2nd another embodiment of this invention. 本発明の第３の実施の形態を示す断面図である。It is sectional drawing which shows the 3rd Embodiment of this invention. 本発明の第３のさらに別の実施の形態を示す断面図である。It is sectional drawing which shows the 3rd further another embodiment of this invention.

符号の説明Explanation of symbols

１…基板領域 ２…エピタキシャル領域
３…第一のヘテロ半導体領域 ４…パンチスルー防止領域
５…電界緩和領域 ６…ガードリング領域
７…裏面金属電極 ８…表面金属電極
９…層間絶縁膜 １０…第二のヘテロ半導体領域
１１…ゲート絶縁膜 １２…ゲート電極
２１…基板領域 ２２…エピタキシャル領域
２３…ベース領域 ２４…ソース領域
２５…ゲート絶縁膜 ２６…ゲート電極
２７…ソース電極 ２８…ドレイン電極
２９…第一のヘテロ半導体領域 ３０…パンチスルー防止領域
３１…電界緩和領域（ベース領域２３と共通）
３２…第二のヘテロ半導体領域
１００…半導体基体 DESCRIPTION OF SYMBOLS 1 ... Substrate region 2 ... Epitaxial region 3 ... First hetero semiconductor region 4 ... Punch through prevention region 5 ... Electric field relaxation region 6 ... Guard ring region 7 ... Back surface metal electrode 8 ... Front surface metal electrode 9 ... Interlayer insulating film 10 ... First Second hetero semiconductor region 11 ... Gate insulating film 12 ... Gate electrode 21 ... Substrate region 22 ... Epitaxial region 23 ... Base region 24 ... Source region 25 ... Gate insulating film 26 ... Gate electrode 27 ... Source electrode 28 ... Drain electrode 29 ... No. One hetero semiconductor region 30 ... punch-through prevention region 31 ... electric field relaxation region (common with the base region 23)
32 ... Second hetero semiconductor region 100 ... Semiconductor substrate

Claims (9)

第一導電型の第一の半導体領域と、前記第一の半導体領域とはバンドギャップの異なる第二の半導体領域からなるヘテロ接合を有する半導体装置において、前記第一の半導体領域と前記第二の半導体領域との接合面の端部に接するように、前記第一の半導体領域中に第二導電型のパンチスルー防止領域を介して第二導電型の電界緩和領域を有し、少なくとも前記パンチスルー防止領域は前記電界緩和領域よりも不純物濃度が同等以上であることを特徴とする半導体装置。   In a semiconductor device having a heterojunction including a first semiconductor region of a first conductivity type and a second semiconductor region having a different band gap from the first semiconductor region, the first semiconductor region and the second semiconductor region The first semiconductor region has a second conductivity type electric field relaxation region through a second conductivity type punch-through prevention region so as to be in contact with the end of the bonding surface with the semiconductor region, and at least the punch-through The semiconductor device according to claim 1, wherein the prevention region has an impurity concentration equal to or higher than that of the electric field relaxation region. 少なくとも前記第一の半導体領域と接する前記第二の半導体領域の前記端部が、第二導電型であることを特徴とする請求項１記載の半導体装置。   2. The semiconductor device according to claim 1, wherein at least the end portion of the second semiconductor region in contact with the first semiconductor region is of a second conductivity type. 少なくとも前記第一の半導体領域と接する前記第二の半導体領域の前記端部が、前記パンチスルー防止領域とオーミック接続していることを特徴とする請求項１または２記載の半導体装置。   3. The semiconductor device according to claim 1, wherein at least the end portion of the second semiconductor region in contact with the first semiconductor region is in ohmic contact with the punch-through prevention region. 前記第一の半導体領域を含んでなる半導体基体と、前記半導体基体の一主面に接して前記半導体基体とはバンドギャップの異なるヘテロ半導体領域とを有し、前記半導体基体と前記ヘテロ半導体領域との接合端部の少なくとも最外周部近傍において、前記第二の半導体領域並びに前記パンチスルー防止領域並びに前記電界緩和領域がそれぞれ形成されていることを特徴とする請求項１ないし３のいずれか記載の半導体装置。   A semiconductor substrate comprising the first semiconductor region; and a hetero semiconductor region in contact with one main surface of the semiconductor substrate and having a different band gap from the semiconductor substrate, the semiconductor substrate and the hetero semiconductor region; 4. The method according to claim 1, wherein the second semiconductor region, the punch-through prevention region, and the electric field relaxation region are formed at least in the vicinity of the outermost peripheral portion of the junction end portion of each of the first to third portions. Semiconductor device. 前記第二の半導体領域もしくは前記ヘテロ半導体領域と前記半導体基体との接合部の一部にゲート絶縁膜を介してゲート電極が形成されていることを特徴とする請求項１ないし４のいずれか記載の半導体装置。   5. A gate electrode is formed at a part of a junction between the second semiconductor region or the hetero semiconductor region and the semiconductor substrate via a gate insulating film. Semiconductor device. 前記第一の半導体領域を含んでなる半導体基体と、前記半導体基体の所定領域に、第二導電型のベース領域並びに第一導電型のソース領域とを有し、少なくとも前記半導体基体並びに前記ソース領域に接するようにゲート絶縁膜を介してゲート電極を有し、前記半導体基体と前記第二の半導体領域との接合端部の少なくとも最外周部近傍において、前記パンチスルー防止領域並びに前記電界緩和領域がそれぞれ形成されていることを特徴とする請求項１ないし３のいずれか記載の半導体装置。   A semiconductor substrate including the first semiconductor region; and a predetermined region of the semiconductor substrate having a second conductivity type base region and a first conductivity type source region, and at least the semiconductor substrate and the source region A punch-through prevention region and an electric field relaxation region at least in the vicinity of the outermost peripheral portion of the junction end between the semiconductor substrate and the second semiconductor region. 4. The semiconductor device according to claim 1, wherein each of the semiconductor devices is formed. 前記第一の半導体領域を含んでなる半導体基体と、前記半導体基体の所定領域に、第二導電型のベース領域並びに第一導電型のソース領域とを有し、少なくとも前記半導体基体並びに前記ソース領域に接するようにゲート絶縁膜を介してゲート電極を有し、前記半導体基体に接して前記半導体基体とはバンドギャップの異なるヘテロ半導体領域を有し、前記半導体基体と前記ヘテロ半導体領域との接合端部の少なくとも最外周部近傍において、前記第二の半導体領域並びに前記パンチスルー防止領域並びに前記電界緩和領域がそれぞれ形成されていることを特徴とする請求項１ないし３のいずれか記載の半導体装置。   A semiconductor substrate including the first semiconductor region; and a predetermined region of the semiconductor substrate having a second conductivity type base region and a first conductivity type source region, and at least the semiconductor substrate and the source region A gate electrode through a gate insulating film so as to be in contact with the semiconductor substrate, a hetero semiconductor region having a band gap different from that of the semiconductor substrate, and a junction end of the semiconductor substrate and the hetero semiconductor region 4. The semiconductor device according to claim 1, wherein the second semiconductor region, the punch-through prevention region, and the electric field relaxation region are formed at least in the vicinity of the outermost peripheral portion of the portion. 5. 前記第一の半導体領域が炭化珪素からなることを特徴とする請求項１ないし７のいずれか記載の半導体装置。   8. The semiconductor device according to claim 1, wherein the first semiconductor region is made of silicon carbide. 前記第二の半導体領域が単結晶シリコン、アモルファスシリコン、多結晶シリコンの少なくともいずれかからなることを特徴とする請求項１ないし８のいずれか記載の半導体装置。   9. The semiconductor device according to claim 1, wherein the second semiconductor region is made of at least one of single crystal silicon, amorphous silicon, and polycrystalline silicon.
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