JP2005294300A - Non-single crystal transistor integrated circuit and manufacturing method thereof - Google Patents

Abstract

A non-single-crystal transistor integrated circuit having more functions and a manufacturing method thereof are provided.
First, through-hole processing is performed on a polymer film. Through the holes formed in this way, electrical conduction is established between the electrodes 2 and 3 on the front and back surfaces. Next, the gate insulating film 5 is applied and cured in an oven. Thereafter, a part of the polyimide is peeled off and preparation for forming a via is made. Furthermore, the organic semiconductor layer 6 is formed by a vapor deposition method or the like. At the time of this vapor deposition, by using a metal mask, the organic semiconductor layer 6 is formed only in a necessary portion, and element isolation is performed. Finally, the source electrode 7 and the drain electrode 8 are formed to complete the organic transistor 9. After forming the integrated circuit of the organic transistor 9 in this way, N sheets (N is a natural number of 2 or more, 3 in FIG. 1) having the integrated circuit of the organic transistor 9 are laminated and bonded together.
[Selection] Figure 1

Description

  The present invention relates to a non-single-crystal transistor integrated circuit such as a polycrystalline silicon transistor, an amorphous silicon transistor, or an organic transistor, and a manufacturing method thereof.

In recent years, integrated circuits using non-single-crystal transistors such as organic transistors have attracted attention in order to realize functions that are difficult to achieve with single-crystal transistors such as silicon (for example, increasing the area and ensuring mechanical flexibility). Has been.
“CUT-AND-PASTE ORGANIC FET CUSTOMIZED ICS FOR APPLICATION TO ARTIFICIAL SKIN”, T. Someya, H. Kawaguchi, and T. Sakurai, Technical Digest of 2004 IEEE International Solid-State Circuits Conference (ISSCC 2004), San Francisco Marriott, San Francisco, CA, February 14- 19, 2004, No. 16.2, Page 288.

The demand for higher functionality of such non-single-crystal transistors tends to increase further, and in particular, it is desired to have the following functions.
(1) Reduction of the area occupied by non-single-crystal transistors.
(2) Pressure detection with high accuracy.
(3) Highly accurate distortion detection.
(4) Easy black and white discrimination in the photo detector.
(5) Improvement of resolution.
(6) Protection of amorphous transistors from mechanical shock and pressure.
(7) Improvement of the operation speed of the amorphous transistor.

  An object of the present invention is to provide a non-single-crystal transistor integrated circuit with higher functionality and a method for manufacturing the same.

A non-single crystal transistor integrated circuit manufacturing method according to the present invention includes:
Forming a through hole in the polymer film; and
Electrically connecting both sides of the polymer film through the through hole;
Providing a non-single crystal transistor on one side of the polymer film;
The polymer film on which the non-single-crystal transistor is formed is stacked in the vertical direction with N layers (N is a natural number of 2 or more), and the non-single-crystal transistor of each polymer film is electrically connected through the through hole. And a connecting step.

The non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “first non-single-crystal transistor integrated circuit”)
Comprising a polymer film in which N layers (N is a natural number of 2 or more) superimposed in the vertical direction;
For each of the polymer films, a single crystal transistor is provided on one surface, and a through hole for electrically connecting both surfaces is formed, and the single crystal transistor of each polymer film is electrically connected through the through hole. It is characterized by being connected to.

Another non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “second non-single-crystal transistor integrated circuit”)
A first polymer film;
A common electrode provided on the polymer film;
A dielectric provided on the common electrode;
A second polymer film provided on the dielectric;
A pressure sensor that is provided on the second polymer film and reads a change in thickness of the dielectric as a change in capacitance when pressure is applied;
And a non-single-crystal transistor provided on the second polymer film for reading out the pressure sensor.

Another non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “third non-single-crystal transistor integrated circuit”)
A first polymer film;
A common electrode provided on the polymer film;
A piezoelectric polymer material provided on the common electrode;
A second polymer film provided on the dielectric;
A strain sensor that is provided on the second polymer film, and reads a deformation amount of the piezoelectric polymer material as a strain when pressure is applied or bending deformation;
A non-single-crystal transistor for reading out the strain sensor is provided on the second polymer film.

Another non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “fourth non-single-crystal transistor integrated circuit”)
A transparent polymer film having an opening and a light shielding part;
An electrode provided in the light shielding portion;
A first-type non-single-crystal material layer provided on the electrode;
A second type non-single crystal material layer provided on the first type non-single crystal material layer;
A transparent electrode provided on the second-type non-single-crystal material layer;
A polymer film provided on the transparent electrode;
A non-single-crystal transistor provided on the polymer film and electrically connected to the transparent electrode.

Another non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “fifth non-single-crystal transistor integrated circuit”)
an array of cells in m rows and n columns (both m and n are natural numbers greater than or equal to 2);
Means for selecting seconds and / or columns of the array;
Each of these cells has detection means for detecting a predetermined physical quantity and / or scientific characteristic, and a non-single crystal transistor having a switching function connected to the sensor,
The cell array is roughly scanned every predetermined unit, and only when there is a response, the cell array is read out later.

Another non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “sixth non-single-crystal transistor integrated circuit”)
A polymer film,
A non-single-crystal transistor provided on one surface of the polymer film;
And a protective film for protecting the non-single-crystal transistor.

Another non-single-crystal transistor integrated circuit according to the present invention (hereinafter referred to as “seventh non-single-crystal transistor integrated circuit”)
A polymer film,
Comprising a non-single-crystal transistor provided on one side of the polymer film,
The non-single-crystal transistor is
A gate electrode;
A gate insulating film in which the thickness of the channel portion is smaller than the other portions,
A non-single crystal material provided at a location corresponding to the channel portion;
It has a source electrode and a drain electrode provided on the gate insulating film so as to be electrically connected to the non-single crystal material.

  According to the non-single crystal transistor integrated circuit manufacturing method of the present invention, a through hole is formed in a polymer film, and both sides of the polymer film are electrically connected through the through hole. A non-single-crystal transistor is provided on the surface, and a polymer film on which the non-single-crystal transistor is formed is overlapped with N layers (N is a natural number of 2 or more) in the vertical direction, and the non-single-crystal transistor is formed through a through hole. Single crystal transistors are electrically connected.

  Since the carrier mobility in a non-single-crystal semiconductor is about three orders of magnitude lower than that of a single-crystal semiconductor (eg, silicon), the operation speed of the non-single-crystal transistor is also slowed accordingly. For this reason, in order to sufficiently secure a current necessary for circuit operation, it is necessary to increase the ratio (W / L) of the channel length (L) to the channel width (W).

  In general, miniaturization of a non-single-crystal transistor is difficult as compared with silicon, and the channel length is usually about 1 to 100 microns when a printing technique is used, and miniaturization is limited. As a result, the channel width needs to be very large, resulting in an increase in the area occupied by the amorphous transistor, and the area of the integrated circuit using the amorphous transistor is significantly increased. Therefore, the integrated circuit may not be laid out within a desired area.

  On the other hand, since non-single crystal semiconductors (particularly organic semiconductors) are vulnerable to heat, once an amorphous semiconductor is applied on a substrate, a heating process cannot be applied. Since a heating process is required to apply the insulating film which is a constituent element of the amorphous transistor, it is necessary to apply the insulating film before applying the amorphous semiconductor.

  As an effective technique for advancing the application of non-single-crystal transistor integrated circuits while avoiding the increase in the area occupied by non-single-crystal transistors, a technique for vertically stacking non-single-crystal transistors can be considered. it can. However, as described above, since the non-single-crystal semiconductor is vulnerable to heat, the next insulating film cannot be formed after the non-single-crystal transistor is formed. This means that in the method in which the thin film layer is applied in order from the bottom of the base material, the next non-single crystal transistor cannot be formed after the non-single crystal transistor is formed.

  In the method for manufacturing a non-single-crystal transistor integrated circuit according to the present invention, the non-single-crystal transistors are stacked in the vertical direction without using a heating process, so that the area occupied by the non-single-crystal transistors can be reduced. In addition, it is possible to further provide a dummy sheet for preventing a step from being generated between the polymer films.

  According to the first non-single crystal transistor integrated circuit, the area occupied by the non-single crystal transistors can be reduced by overlapping the non-single crystal transistors in the vertical direction.

  According to the second non-single-crystal transistor integrated circuit, when a pressure is applied, the change in the thickness of the dielectric is read as a change in the capacitance, so that the pressure can be detected with high accuracy.

  According to the third non-single-crystal transistor integrated circuit, it is possible to detect strain with high accuracy by reading the deformation amount of the piezoelectric polymer material as strain when pressure is applied or when it is bent and deformed. Become.

  According to the fourth non-single-crystal transistor integrated circuit, it is possible to easily distinguish between 1 and 0 of the light amount, so that it is easy to distinguish black and white in the photodetector.

  According to the fifth non-single-crystal transistor integrated circuit, the resolution is improved by scanning the array of cells roughly every predetermined unit and finely reading out only when there is a response.

  According to the sixth non-single crystal transistor integrated circuit, the non-single crystal transistor can be protected from mechanical shock and pressure by the protective film for protecting the non-single crystal transistor.

  According to the seventh non-single-crystal transistor integrated circuit, the operation speed of the amorphous transistor is improved by making the thickness of the channel portion of the gate insulating film smaller than the other portions.

Embodiments of a non-single-crystal transistor integrated circuit and a manufacturing method thereof according to the present invention will be described in detail with reference to the drawings. Note that in the following description of embodiments, the case where a non-single-crystal transistor is an organic transistor will be described unless otherwise specified.
FIG. 1 is a diagram for explaining a method of manufacturing a non-single crystal transistor integrated circuit according to the present invention. In this case, first, through-hole processing is performed on a polymer film (base film) 1 such as a polyimide film or a polyethylene terephthalate (PET) film.

  About the through-hole processing of the polymer film 1, drilling is performed using an NC drill processing machine, a laser processing machine, or using a plastic injection molding machine. Through the holes formed in this way, electrical conduction is established between the electrodes 2 and 3 on the front and back surfaces. At this time, it is usual to start with a metal foil on the entire front and back surfaces of the polymer film 1 and pattern the gate electrode 4 after the drilling / conduction process. It is not limited to this.

  Next, a gate insulating film 5 such as polyimide is applied by spin coating and cured in an oven. Thereafter, a part of the polyimide is peeled off by a method such as laser processing to prepare for forming a via.

  Further, an organic semiconductor layer 6 such as pentacene is formed by a vapor deposition method or the like. At the time of this vapor deposition, by using a metal mask, the organic semiconductor layer 6 is formed only in a necessary portion, and element isolation is performed. Finally, the source electrode 7 and the drain electrode 8 are formed to complete the organic transistor 9.

  After forming the integrated circuit of the organic transistor 9 in this way, N sheets (N is a natural number of 2 or more, 3 in FIG. 1) having the integrated circuit of the organic transistor 9 are laminated and bonded together. In addition, although the integrated circuit of the organic transistor 9 can be formed individually, a plurality of integrated circuits can be formed on one sheet at a time, and individual circuits can be cut out from this sheet.

  If different shapes are bonded together at the time of bonding, a step is generated, which is not preferable. Therefore, the shapes of the sheets to be bonded are aligned in advance. If the shape of the sheet is not uniform, a dummy sheet is prepared so as not to cause a step.

  FIG. 2 shows a first embodiment of a non-single crystal transistor integrated circuit according to the present invention. In this integrated circuit, a polymer film 11, a common electrode 12 supported by the polymer film 11, an insulating film 13, and a polymer film 14 are formed in this order, and a capacitive pressure sensor 15 and an organic transistor 16 are integrated on the polymer film 14. Is done. The common electrode 12 constitutes a capacitor together with the electrodes 17 and 18 arranged at an interval L.

  When such a capacitive pressure sensor 14 is used, when a pressure is applied in the direction of the arrow, a change in thickness of the insulating film 13 as a dielectric is read as a change in capacitance. According to the present embodiment, the pressure can be read with good control in a region where the amount of change in the thickness of the insulating film 13 changes linearly with respect to the pressure.

  Pressure type sensors that read the change in dielectric thickness as a change in capacitance when pressure changes have existed in the past, but configuring such a matrix as an area type increases the number of elements Then it is difficult. The reason is that the change in capacitance could not be read due to stray capacitance due to wiring.

  Such inconvenience can be avoided by adopting an active matrix system in which each sensor cell includes a non-single crystal transistor such as the organic transistor 15 in order to read out the capacitive pressure sensor 14. In particular, a flexible and large-area active matrix can be constructed at low cost by using the organic transistor 15. Further, by combining the capacitance type pressure sensor 14 and a non-single crystal transistor such as the organic transistor 15, high impedance measurement is possible, and the capacitance type pressure mapping can be read with high accuracy.

  FIG. 3 shows a second embodiment of a non-single crystal transistor integrated circuit according to the present invention. In this integrated circuit, a polymer film 21, a common electrode 22 supported by the polymer film 21, a polymer piezoelectric material portion 23 such as polyvinylidene fluoride (PVDF), and a polymer film 24 are formed in this order on the polymer film 24. The strain sensor 25 and the organic transistor 26 are integrated. The common electrode 22 forms a capacitor together with the electrodes 27 and 28. By using the polymer piezoelectric material portion 23, an excellent array of strain sensors can be configured.

  FIG. 4 shows a third embodiment of a non-single crystal transistor integrated circuit according to the present invention. This integrated circuit includes a transparent polymer film 33 provided with an opening portion 31 and a light shielding portion 32, an electrode 34 made of aluminum, silver, or the like, an N-type organic semiconductor 35 made of perylene, and copper phthalocyanine. And the like, a transparent electrode 37 made of ITO, a polymer film 38, and an organic transistor 39.

  The transparent polymer film 33, the electrode 34, the N-type organic semiconductor 35, the P-type organic semiconductor 36, the transparent electrode 37, and the polymer film 38 provided with the opening portion 31 and the light shielding portion 32 constitute a reflective photodetector. The light 40 that has passed through the portion 31 and is reflected by the polymer film 38 enters the transparent electrode 37. When light 40 is incident on a portion corresponding to a black portion of an object (for example, paper) 41 to be imaged, the light amount of the light 40 becomes zero. On the other hand, when the light 40 enters the portion corresponding to the white portion of the object 41, the light amount of the light 40 becomes 1. Thus, by discriminating between 0 and 1 of the light quantity, a good image capture can be configured.

  FIG. 5 shows a fourth embodiment of a non-single crystal transistor integrated circuit according to the present invention. This integrated circuit is connected to the sensor array 51 through a 16 × 16 sensor array 51 and word lines 0, 1, 2, 3,..., C, D, E, F, and row addresses R1 to R4 are assigned. A row decoder 52 having a column address; and a column selector 53 having a column address C0 and the like.

  Since the response speed of a non-single crystal transistor such as an organic transistor is slower than that of a single crystal transistor, progressive scan is effective. In the case of artificial skin, it is usually considered that only some of the sensors in the sensor array 51 are pressed and most of the sensors are not pressed. Further, in the case of a scanner, a portion drawn in black is usually a part, and a large portion remains white. For this reason, it is not necessary to perform a raster scan carefully from the beginning. First, a rough scan is performed in small units such as 2 rows and 2 columns, and then only the portion where the signal exists is read out in detail later. It is expected to increase the response speed. As described above, progressive scanning is a process in which only a portion where a signal exists is read in detail after a coarse scan in small units such as 2 rows and 2 columns.

  In FIG. 5, the case where progressive scan is performed in units of 2 rows and 2 columns will be described. When the scanner progressive bar signal shown in FIG. 5 is low, two adjacent word lines become zero. At this time, if any one of the data outputs D0, D1, D2, and D3 is 1, it means that a signal is included in one of the regions of 2 rows and 2 columns. When any one of the data outputs D0, D1, D2, and D3 is 1, the scanner Progressive bar signal is set to high to perform fine scanning.

  In the configuration shown in FIG. 5, by using a liquid crystal panel display as a light source, a structure that is not integrated with an organic transistor can be employed. In this case, only one line is illuminated on the liquid crystal panel display. Scanning such illuminated rows eliminates the need for organic transistors. By configuring the photodiodes in units of arrays or areas and connecting them in the bit direction, it is not necessary to connect the photodiodes in the word direction. Further, instead of lighting one row at a time, by causing one or two rows to shine every other bit, a shifted effect is produced, so that the resolution can be increased.

  FIG. 6 shows a fifth embodiment of a non-single crystal transistor integrated circuit according to the present invention. In this integrated circuit, a protective rubber sheet 63 such as silicone rubber and a polymer film 64 are attached in this order to the side of the polymer film 61 where the organic transistor 62 is provided, and the organic transistor of the polymer film 61 is attached. A pressure-sensitive conductive rubber 65 and a polymer film 66 are provided in this order on the side where 62 is not provided.

  In an organic transistor using a low molecular semiconductor as a channel layer, the adhesion between the organic semiconductor and other materials is poor, so the organic semiconductor layer may be easily peeled off from the gate insulating film, or the source electrode in contact with the organic semiconductor layer In addition, the drain electrode may be peeled off. These fears are particularly apparent in applications such as artificial skin where flexibility is important. In addition, in a contact-type device in which mechanical pressure is applied, such as artificial skin, the organic semiconductor layer may be easily peeled off. Therefore, it is effective to introduce a layer that absorbs mechanical shock and pressure. As in the present embodiment, a rubber sheet 63 is placed in order to protect the organic semiconductor layer of the organic transistor 62 from impact and pressure.

  FIG. 6 shows a sixth embodiment of a non-single crystal transistor integrated circuit according to the present invention. The organic transistor of this integrated circuit includes a polymer film 71, a gate electrode 72 provided thereon, a gate insulating film 73 covering the polymer film 71, an insulating film 74 provided thereon, an organic semiconductor layer 75, and An insulating film 76, a source electrode 77 provided on the insulating film 74, and a drain electrode 78 provided on the insulating film 76 are provided.

  Although it is preferable to reduce the thickness of the channel portion of the gate insulating film 73 as much as possible, the thickness of the contact region and the wiring portion of the gate insulating film 73 is from the viewpoint of increasing the operation speed of the circuit by reducing the capacitance of the capacitor. It is preferable to make it larger than other parts. When a polymer material is used for the gate insulating film 73, it is preferable to form the gate insulating film 73 by spin coating in order to stably form the gate insulating film 73 having a relatively thin channel portion. However, in the case of the spin coating method, the film thickness of the insulating film cannot be locally changed. Therefore, after a gate insulating film having a certain thickness is formed by spin coating, a predetermined thick film pattern is applied using a printing technique such as screen printing.

The present invention is not limited to the above-described embodiment, and many changes and modifications can be made.
For example, although the case where the non-single-crystal transistor is an organic transistor has been described in the above embodiment, any other kind of non-single-crystal transistor such as a polycrystalline silicon transistor or an amorphous silicon transistor can be used.

  In the non-single-crystal transistor integrated circuit manufactured by the manufacturing method shown in FIG. 1, each sheet may have a sensor or a movable part, and each sheet has a function of applying a voltage, a function of supplying a current, a light wave It is also possible to have at least one of the functions for generating.

It is a figure for demonstrating the manufacturing method of the non-single-crystal transistor integrated circuit by this invention. 1 shows a first embodiment of a non-single-crystal transistor integrated circuit according to the present invention. 2 shows a second embodiment of a non-single-crystal transistor integrated circuit according to the present invention. 3 shows a third embodiment of a non-single-crystal transistor integrated circuit according to the present invention. 4 shows a fourth embodiment of a non-single-crystal transistor integrated circuit according to the present invention. 5 shows a fifth embodiment of a non-single-crystal transistor integrated circuit according to the present invention. 6 shows a sixth embodiment of a non-single-crystal transistor integrated circuit according to the present invention.

Explanation of symbols

1, 11, 12, 14, 21, 24, 38, 61, 64, 66, 71 Polymer film 2, 3, 17, 18, 27, 28, 34 Electrode 4, 72 Gate electrode 5, 73 Gate insulating film 6 , 26, 75 Organic semiconductor layer 7, 77 Source electrode 8, 78 Drain electrode 9, 16, 39, 62 Organic transistor 10 Sheet 12, 22 Common electrode 13, 74, 76 Insulating film 15 Capacitive pressure sensor 23 Polymer Piezoelectric material part 25 Strain sensor 31 Opening part 32 Light shielding part 33 Transparent polymer film 35 N-type organic semiconductor 36 P-type organic semiconductor 37 Transparent electrode 40 Light 41 Target 51 Sensor array 52 Row (row) decoder 53 Column (column) selector 63 Protective rubber sheet 65 Pressure sensitive conductive rubber

Claims (9)

Forming a through hole in the polymer film; and
Electrically connecting both sides of the polymer film through the through hole;
Providing a non-single crystal transistor on one side of the polymer film;
The polymer film on which the non-single-crystal transistor is formed is stacked in the vertical direction with N layers (N is a natural number of 2 or more), and the non-single-crystal transistor of each polymer film is electrically connected through the through hole. And a connecting step. A method for manufacturing a non-single crystal transistor integrated circuit. Comprising a polymer film in which N layers (N is a natural number of 2 or more) superimposed in the vertical direction;
For each of the polymer films, a single crystal transistor is provided on one surface, and a through hole for electrically connecting both surfaces is formed, and the single crystal transistor of each polymer film is electrically connected through the through hole. A non-single-crystal transistor integrated circuit characterized by being connected to.   3. The non-single-crystal transistor integrated circuit according to claim 2, further comprising a dummy sheet for preventing a step between the polymer films. A first polymer film;
A common electrode provided on the polymer film;
A dielectric provided on the common electrode;
A second polymer film provided on the dielectric;
A pressure sensor that is provided on the second polymer film and reads a change in thickness of the dielectric as a change in capacitance when pressure is applied;
A non-single-crystal transistor integrated circuit, comprising: a non-single-crystal transistor provided on the second polymer film for reading out the pressure sensor. A first polymer film;
A common electrode provided on the polymer film;
A piezoelectric polymer material provided on the common electrode;
A second polymer film provided on the dielectric;
A strain sensor that is provided on the second polymer film, and reads a deformation amount of the piezoelectric polymer material as a strain when pressure is applied or bending deformation;
A non-single-crystal transistor integrated circuit, comprising: a non-single-crystal transistor provided on the second polymer film for reading out the strain sensor. A transparent polymer film having an opening and a light shielding part;
An electrode provided in the light shielding portion;
A first-type non-single-crystal material layer provided on the electrode;
A second type non-single crystal material layer provided on the first type non-single crystal material layer;
A transparent electrode provided on the second-type non-single-crystal material layer;
A polymer film provided on the transparent electrode;
A non-single crystal transistor integrated circuit comprising a non-single crystal transistor provided on the polymer film and electrically connected to the transparent electrode. an array of cells in m rows and n columns (both m and n are natural numbers greater than or equal to 2);
Means for selecting seconds and / or columns of the array;
Each of these cells has detection means for detecting a predetermined physical quantity and / or scientific characteristic, and a non-single crystal transistor having a switching function connected to the sensor,
A non-single-crystal transistor integrated circuit, wherein the cell array is roughly scanned every predetermined unit, and is read finely only when there is a response. A polymer film,
A non-single-crystal transistor provided on one surface of the polymer film;
A non-single-crystal transistor integrated circuit comprising a protective film for protecting the non-single-crystal transistor. A polymer film,
Comprising a non-single-crystal transistor provided on one side of the polymer film,
The non-single-crystal transistor is
A gate electrode;
A gate insulating film in which the thickness of the channel portion is smaller than the other portions,
A non-single crystal material provided at a location corresponding to the channel portion;
A non-single-crystal transistor integrated circuit comprising a source electrode and a drain electrode provided on the gate insulating film so as to be electrically connected to the non-single-crystal material.

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