JP2005285941A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2005285941A JP2005285941A JP2004095126A JP2004095126A JP2005285941A JP 2005285941 A JP2005285941 A JP 2005285941A JP 2004095126 A JP2004095126 A JP 2004095126A JP 2004095126 A JP2004095126 A JP 2004095126A JP 2005285941 A JP2005285941 A JP 2005285941A
- Authority
- JP
- Japan
- Prior art keywords
- heating
- heating lamp
- heating element
- cooling air
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 139
- 238000001816 cooling Methods 0.000 abstract description 51
- 238000000034 method Methods 0.000 abstract description 39
- 238000012423 maintenance Methods 0.000 abstract description 27
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- 239000007789 gas Substances 0.000 description 26
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004095126A JP2005285941A (ja) | 2004-03-29 | 2004-03-29 | 基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004095126A JP2005285941A (ja) | 2004-03-29 | 2004-03-29 | 基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005285941A true JP2005285941A (ja) | 2005-10-13 |
| JP2005285941A5 JP2005285941A5 (enExample) | 2007-10-25 |
Family
ID=35184021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004095126A Pending JP2005285941A (ja) | 2004-03-29 | 2004-03-29 | 基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005285941A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2006883A3 (de) * | 2007-05-21 | 2011-06-29 | Centrotherm Photovoltaics AG | Vorrichtung zur Dotierung, Beschichtung oder Oxidation von Halbleitermaterial bei niedrigem Druck |
-
2004
- 2004-03-29 JP JP2004095126A patent/JP2005285941A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2006883A3 (de) * | 2007-05-21 | 2011-06-29 | Centrotherm Photovoltaics AG | Vorrichtung zur Dotierung, Beschichtung oder Oxidation von Halbleitermaterial bei niedrigem Druck |
| US8460468B2 (en) | 2007-05-21 | 2013-06-11 | Centrotherm Photovoltaics Ag | Device for doping, deposition or oxidation of semiconductor material at low pressure |
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