JP2005281553A - Adhesive composition for semiconductor device and adhesive sheet for semiconductor device using it - Google Patents

Adhesive composition for semiconductor device and adhesive sheet for semiconductor device using it Download PDF

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JP2005281553A
JP2005281553A JP2004098776A JP2004098776A JP2005281553A JP 2005281553 A JP2005281553 A JP 2005281553A JP 2004098776 A JP2004098776 A JP 2004098776A JP 2004098776 A JP2004098776 A JP 2004098776A JP 2005281553 A JP2005281553 A JP 2005281553A
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adhesive
adhesive composition
semiconductor device
acrylic copolymer
epoxy
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Daikichi Nishioka
大吉 西岡
Hideki Shinohara
英樹 篠原
Hiroshi Tsuchiya
浩史 土谷
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Toray Industries Inc
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Toray Industries Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide industrially a new adhesive composition for a semiconductor device which is excellent in adhesiveness, reflow heat resistance, and workability, and to provide an adhesive sheet for a semiconductor device using it. <P>SOLUTION: The adhesive composition for a semiconductor device is characterized in that it contains a thermoplastic resin and a thermosetting resin, in that the thermoplastic resin is an epoxy group-containing acrylic copolymer, and in that its epoxy equivalent is larger than 0 and not larger than 1,500 g/eq, and the adhesive sheet for a semiconductor device uses it. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体集積回路を実装する際に用いられるテープオートメーテッドボンディング(TAB)方式のパターン加工テープ、ボールグリッドアレイ(BGA)パッケージ用インターポーザー等の半導体接続用基板、リードフレーム固定テープ、LOC固定テープ、半導体素子等の電子部品とリードフレームや絶縁性支持基板などの支持部材との接着に用いられる接着剤組成物、およびそれを用いた接着剤シートに関する。   The present invention relates to a tape automated bonding (TAB) pattern processing tape used for mounting a semiconductor integrated circuit, a semiconductor connection substrate such as a ball grid array (BGA) package interposer, a lead frame fixing tape, a LOC The present invention relates to an adhesive composition used for bonding an electronic component such as a fixing tape or a semiconductor element and a support member such as a lead frame or an insulating support substrate, and an adhesive sheet using the same.

半導体集積回路(IC)の実装には、ガラスエポキシやポリイミド等の有機絶縁性フィルム上にIC接続用の導体パターンを形成した、インターポーザーと称する半導体接続用基板を介した方式が増加している。   For the mounting of semiconductor integrated circuits (ICs), there is an increasing number of systems through a semiconductor connection substrate called an interposer in which a conductive pattern for IC connection is formed on an organic insulating film such as glass epoxy or polyimide. .

一方で、パッケージ形態としては、デュアルインラインパッケージ(DIP)、スモールアウトラインパッケージ(SOP)、クアッドフラットパッケージ(QFP)等のパッケージ形態が用いられてきた。しかし、ICの多ピン化とパッケージの小型化に伴って、最もピン数を多くできるQFPにおいても限界に近づいてきたため、パッケージの裏面に接続端子を配列するBGA(ボールグリッドアレイ)、CSP(チップスケールパッケージ)が用いられるようになってきた。   On the other hand, package forms such as a dual inline package (DIP), a small outline package (SOP), and a quad flat package (QFP) have been used. However, with the increase in the number of pins of ICs and the miniaturization of packages, the QFP that can increase the number of pins is approaching the limit. Therefore, BGA (ball grid array) and CSP (chips) that arrange connection terminals on the back surface of the package. Scale package) has been used.

図1にボードオンチップ(BOC)等に代表されるBGA方式の例を示す。BGA方式は、ICを接続した半導体集積回路接続用基板の外部接続部としてICのピン数にほぼ対応する半田ボールを格子上(グリッドアレイ)に有している。配線基板3への接続は、半田ボール6面をすでに半田が印刷してある配線基板3の導体部4上に一致するように乗せて、リフローにより半田を融解して行なわれる。最大の特徴は、インターポーザー(配線基板3)の面を使用できるため、QFP等の周囲の辺しか使用できないパッケージと比較して多くの端子を少ないスペースに配置できることにある。この小型化機能をさらに進めたものに、チップスケールパッケージ(CSP)があり、マイクロBGA(μ−BGA)、ファインピッチBGA(FP−BGA)、メモリーBGA(m−BGA)、ボードオンチップ(BOC)等がある。μ−BGAはインターポーザーからビームリードを出してICと接続することが特徴であり、m−BGA、BOC(図1)、FP−BGAはICとインターポーザー間はワイヤーボンディングによって接続される。ワイヤーボンディング接続は微細ピッチの対応が難しい反面、煩雑なビームリード加工が不要であり、かつ従来のリードフレーム用のワイヤーボンダーが使用できるため、コスト的に有利である。これらの構造を有するパッケージのICとインターポーザーを接着する際にも、接着剤すなわちダイボンディング材が使用される。   FIG. 1 shows an example of a BGA system represented by a board on chip (BOC). The BGA system has solder balls on the grid (grid array) that substantially correspond to the number of pins of the IC as an external connection portion of the semiconductor integrated circuit connection substrate to which the IC is connected. Connection to the wiring board 3 is performed by placing the solder ball 6 surface on the conductor portion 4 of the wiring board 3 on which solder has already been printed, and melting the solder by reflow. The biggest feature is that since the surface of the interposer (wiring board 3) can be used, many terminals can be arranged in a small space compared to a package such as QFP that can use only the surrounding sides. A chip scale package (CSP) is a further advancement of this miniaturization function. Micro BGA (μ-BGA), fine pitch BGA (FP-BGA), memory BGA (m-BGA), board on chip (BOC) ) Etc. The μ-BGA is characterized in that a beam lead is taken out from the interposer and connected to the IC. The m-BGA, BOC (FIG. 1), and FP-BGA are connected between the IC and the interposer by wire bonding. The wire bonding connection is difficult to cope with a fine pitch, but does not require complicated beam lead processing and can use a conventional wire bonder for a lead frame, which is advantageous in terms of cost. An adhesive, that is, a die bonding material is also used for bonding the IC and interposer of the package having these structures.

さらに、半導体接続用基板には剛性と平面性の付与のための補強板(スティフナー)あるいは放熱のための放熱板(ヒートスプレッダー)等の部品を積層することも行われるが、その際にも接着剤が使用される。   In addition, components such as a reinforcing plate (stiffener) for imparting rigidity and flatness or a heat radiating plate (heat spreader) for heat radiation are also laminated on the semiconductor connection substrate, but in this case, bonding is also performed. Agent is used.

電子機器の小型化、高密度化が進行するに伴い、これらの接着剤はいずれも最終的にパッケージ内に残留することが多いため、接着性、耐熱性、サーマルサイクル性等の諸特性を満たすことが要求される。例えばCSP型の半導体装置に適した接着剤として、アクリル系共重合体を必須成分とした系も提案されている(特許文献1参照)が、この場合はヒートスプレッダーと半導体チップとの熱膨張差を吸収する応力緩和能力や耐電食性、耐湿性は優れているものの耐熱性が充分ではなかった。   As electronic devices become smaller and more dense, these adhesives often end up in the package, so they satisfy various properties such as adhesiveness, heat resistance, and thermal cycleability. Is required. For example, as an adhesive suitable for a CSP type semiconductor device, a system having an acrylic copolymer as an essential component has also been proposed (see Patent Document 1). In this case, the thermal expansion difference between the heat spreader and the semiconductor chip is proposed. Although it has excellent stress relaxation ability, electric corrosion resistance and moisture resistance to absorb water, the heat resistance is not sufficient.

最近は特に、鉛を含有しない環境に配意した半田に注目が集まっており、実際に応用され始めている。しかしこの鉛非含有半田は一般的に融点が高くなることが知られており(特許文献2参照)、これに対応して各半導体部材にも高耐熱化が求められるようになってきている。
特開平11−284114号公報(第6段落) 特開2001−25891号公報(第3段落)
Recently, in particular, attention has been focused on solders that are friendly to an environment that does not contain lead, and they are starting to be applied in practice. However, it is known that this lead-free solder generally has a high melting point (see Patent Document 2), and correspondingly, each semiconductor member is required to have high heat resistance.
JP 11-284114 A (6th paragraph) JP 2001-25891 A (3rd paragraph)

従来のアクリル系共重合体を用いた接着剤組成物では、硬化後接着力、耐リフロー性において必ずしも十分な特性が得られなかった。   In the adhesive composition using the conventional acrylic copolymer, sufficient characteristics were not necessarily obtained in the adhesive strength after curing and the reflow resistance.

本発明はこのような問題点を解決し、接着力、耐リフロー性に優れ、さらに易作業性を有した半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シートを提供することを目的とする。   The present invention solves such problems, and provides an adhesive composition for a semiconductor device having excellent adhesive force and reflow resistance, and further having easy workability, and an adhesive sheet for a semiconductor device using the same. With the goal.

すなわち、本発明は熱可塑性樹脂および熱硬化性樹脂を含有し、エポキシ当量が0を超えて1500g/eq以下であるエポキシ基含有アクリル系共重合体であることを特徴とする半導体装置用接着剤組成物であり、それを用いた半導体装置用接着剤シートである。   That is, the present invention is an epoxy group-containing acrylic copolymer containing a thermoplastic resin and a thermosetting resin and having an epoxy equivalent of more than 0 and 1500 g / eq or less. A composition and an adhesive sheet for a semiconductor device using the composition.

本発明によれば、リフロー耐熱性、接着力が向上し、さらに易作業性を有した接着剤組成物および接着剤シートを得ることができる。   According to the present invention, it is possible to obtain an adhesive composition and an adhesive sheet having improved reflow heat resistance and adhesive strength, and having easy workability.

以下、本発明の構成を詳述する。本発明は、アクリル系共重合体のエポキシ当量を制御することにより、接着力、耐リフロー性及び易作業性に優れた半導体装置用接着剤組成物を得ることができる。   Hereinafter, the configuration of the present invention will be described in detail. In the present invention, by controlling the epoxy equivalent of the acrylic copolymer, it is possible to obtain an adhesive composition for a semiconductor device excellent in adhesive strength, reflow resistance and easy workability.

本発明の半導体装置用接着剤組成物(以下接着剤組成物と称する)は、熱可塑性樹脂と熱硬化性樹脂をそれぞれ1種類以上含むことが好ましい。熱可塑性樹脂は接着性、可撓性、熱応力の緩和、低吸水性による絶縁性の向上等の機能を有し、熱硬化性樹脂は耐熱性、高温での絶縁性、耐薬品性、接着剤層にしたときの強度等の物性バランスを実現するために必要である。   The adhesive composition for a semiconductor device of the present invention (hereinafter referred to as an adhesive composition) preferably contains at least one thermoplastic resin and one thermosetting resin. Thermoplastic resins have functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption, and thermosetting resins have heat resistance, insulation at high temperatures, chemical resistance, adhesion It is necessary to realize a balance of physical properties such as strength when forming the agent layer.

この接着剤は用いる熱可塑性樹脂がエポキシ基含有アクリル系共重合体であり、エポキシ当量が0を超えて1500g/eq以下、好ましくは0を超えて700g/eq以下である。エポキシ当量が1500g/eqを超えると接着剤の接着力が不十分となる。ここでエポキシ当量の測定方法は、次の通りである。まず精評した試料(約3g)をフラスコに採取し、そこにメチルエチルケトン(MEK)20mlを加えて溶解した後、0.2規定の塩酸(MEK溶液)25mlを加える。これを1時間放置後、MEKを40ml加えて撹拌しながらさらに水を10ml加える。この溶液を0.5規定の水酸化カリウム(エタノール溶液)で滴定して1分間以上赤色になった滴定量を終点とした。エポキシ当量は次の式によって計算される。   In this adhesive, the thermoplastic resin used is an epoxy group-containing acrylic copolymer, and the epoxy equivalent is more than 0 and 1500 g / eq or less, preferably more than 0 and 700 g / eq or less. When the epoxy equivalent exceeds 1500 g / eq, the adhesive strength of the adhesive becomes insufficient. Here, the method for measuring the epoxy equivalent is as follows. First, a well-prepared sample (about 3 g) is collected in a flask, 20 ml of methyl ethyl ketone (MEK) is added and dissolved therein, and then 25 ml of 0.2 N hydrochloric acid (MEK solution) is added. After leaving this for 1 hour, 40 ml of MEK is added and another 10 ml of water is added with stirring. This solution was titrated with 0.5 N potassium hydroxide (ethanol solution), and the titration that turned red for 1 minute or more was taken as the end point. The epoxy equivalent is calculated by the following formula:

エポキシ当量(単位:g/eq)=[m×NV/(B−A)×0.5×F]×1000。   Epoxy equivalent (unit: g / eq) = [m × NV / (BA) × 0.5 × F] × 1000.

ここでmはサンプルの重量(g)、NVは固形分比率、Bはブランクの滴定量(ml)、Aは試料の滴定量、Fは0.5規定の水酸化カリウムのファクターである。   Here, m is the weight (g) of the sample, NV is the solid content ratio, B is the titration amount of the blank (ml), A is the titration amount of the sample, and F is the factor of 0.5 N potassium hydroxide.

また重量平均分子量は40万〜100万が適当であり、好ましくは50万〜80万である。重量平均分子量が40万未満であると、接着剤のタックが強くなり取り扱い性が悪くなることに加えて、膜強度が不十分になるためにリフロー耐熱性が低下する。100万を超える超高分子になると、Bステージ(半硬化状態)での膜強度が高くなりすぎ、接着力の低下を招く。重量平均分子量は液体クロマトグラフを用いてポリスチレン換算で求める。例えば移動相としてテトラヒドロフラン試薬1級、移動相流量を2ml/分で温度を35〜40℃に保ったカラムに試料濃度30mg/mlで注入する。   The weight average molecular weight is suitably 400,000 to 1,000,000, preferably 500,000 to 800,000. When the weight average molecular weight is less than 400,000, the tackiness of the adhesive is increased and the handleability is deteriorated. In addition, the film strength is insufficient, so that the reflow heat resistance is lowered. If it exceeds 1 million, the film strength at the B stage (semi-cured state) becomes too high, and the adhesive strength is reduced. The weight average molecular weight is determined in terms of polystyrene using a liquid chromatograph. For example, it is injected at a sample concentration of 30 mg / ml into a column having a tetrahydrofuran reagent grade 1 as the mobile phase, a mobile phase flow rate of 2 ml / min, and a temperature maintained at 35-40 ° C.

接着剤組成物は完全に硬化させた後の接着力が好ましくは5Ncm-1以上、さらに好ましくは10Ncm-1以上であると好適である。完全硬化後の接着力が5Ncm-1より低い場合、パッケージの取り扱い時に剥離を生じたり、リフロー耐熱性が低下するので好ましくない。 The adhesive composition preferably has an adhesive force after being completely cured, preferably 5 Ncm −1 or more, more preferably 10 Ncm −1 or more. When the adhesive force after complete curing is lower than 5 Ncm −1 , it is not preferable because peeling occurs during handling of the package or reflow heat resistance is lowered.

本発明で用いるエポキシ基含有アクリル系共重合体は、グリシジルアクリレートとアクリロニトリル、アルキルアクリレート等を共重合することで得られる。ここでカルボキシル基または水酸基を含有しているアクリル酸エステルを用いると、架橋反応が起こりやすいために接着剤塗料がゲル化しやすくなり、また接着剤シートにした場合にBステージ状の接着力の経時劣化が加速されるので好ましくない。ここで、重合方法は懸濁重合、溶液重合等のいずれかの方法を選択することが可能である。本発明の接着剤組成物におけるエポキシ基含有アクリル系共重合体の含有量は、好ましくは2〜80重量%、より好ましくは5〜70重量%、さらに好ましくは10〜60重量%である。2重量%未満では可撓性が得られず、80重量%を超えると耐熱性に欠けるのでいずれも好ましくない。   The epoxy group-containing acrylic copolymer used in the present invention is obtained by copolymerizing glycidyl acrylate, acrylonitrile, alkyl acrylate and the like. If an acrylic ester containing a carboxyl group or a hydroxyl group is used here, the adhesive coating tends to gel because the crosslinking reaction is likely to occur, and the B-stage adhesive strength over time when the adhesive sheet is formed. Since deterioration is accelerated, it is not preferable. Here, as the polymerization method, any method such as suspension polymerization and solution polymerization can be selected. The content of the epoxy group-containing acrylic copolymer in the adhesive composition of the present invention is preferably 2 to 80% by weight, more preferably 5 to 70% by weight, and still more preferably 10 to 60% by weight. If it is less than 2% by weight, flexibility cannot be obtained, and if it exceeds 80% by weight, the heat resistance is insufficient.

熱硬化性樹脂としては、特にエポキシ樹脂、フェノール樹脂は絶縁性に優れるので好適である。軟化点特性の制御には相溶性の制御が必要であるが、これらの熱硬化樹脂の構造と分子量を適切に選択することが有力な方法である。   As the thermosetting resin, an epoxy resin and a phenol resin are particularly preferable because they are excellent in insulation. To control the softening point characteristics, it is necessary to control the compatibility. However, it is an effective method to appropriately select the structure and molecular weight of these thermosetting resins.

エポキシ樹脂は1分子内に2個以上のエポキシ基を有するものであれば特に制限されないが、ビスフェノールF、ビスフェノールA、ビスフェノールS、レゾルシノール、ジヒドロキシナフタレン、ジシクロペンタジエンジフェノール、ジシクロペンタジエンジキシレノール等のジグリシジルエーテル、エポキシ化フェノールノボラック、エポキシ化クレゾールノボラック、エポキシ化トリスフェニロールメタン、エポキシ化テトラフェニロールエタン、エポキシ化メタキシレンジアミン、シクロヘキサンエポキサイド等の脂環式エポキシ等が挙げられる。さらに、難燃性付与のために、ハロゲン化エポキシ樹脂、特に臭素化エポキシ樹脂を用いることが有効である。この際、臭素化エポキシ樹脂のみでは難燃性の付与はできるものの、接着剤の耐熱性の低下が大きくなるため非臭素化エポキシ樹脂との混合系とすることがさらに有効である。臭素化エポキシ樹脂の例としては、テトラブロモビスフェノールAとビスフェノールAの共重合型エポキシ樹脂、あるいは”BREN”−S(日本化薬(株)製)等の臭素化フェノールノボラック型エポキシ樹脂が挙げられる。これらの臭素化エポキシ樹脂は臭素含有量およびエポキシ当量を考慮して2種類以上混合して用いても良い。   The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but bisphenol F, bisphenol A, bisphenol S, resorcinol, dihydroxynaphthalene, dicyclopentadiene diphenol, dicyclopentadienedixylenol, etc. Alicyclic epoxies such as diglycidyl ether, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylol methane, epoxidized tetraphenylol ethane, epoxidized metaxylene diamine, and cyclohexane epoxide. Furthermore, it is effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, although the flame retardancy can be imparted only by the brominated epoxy resin, it is more effective to use a mixed system with a non-brominated epoxy resin because the heat resistance of the adhesive is greatly reduced. Examples of brominated epoxy resins include copolymerized epoxy resins of tetrabromobisphenol A and bisphenol A, or brominated phenol novolac type epoxy resins such as “BREN” -S (manufactured by Nippon Kayaku Co., Ltd.). . These brominated epoxy resins may be used in combination of two or more in consideration of bromine content and epoxy equivalent.

フェノール樹脂としては、ノボラック型フェノール樹脂、レゾール型フェノール樹脂等の公知のフェノール樹脂がいずれも使用できる。たとえば、フェノール、クレゾール、p−t−ブチルフェノール、ノニルフェノール、p−フェニルフェノール等のアルキル置換フェノール、テルペン、ジシクロペンタジエン等の環状アルキル変性フェノール、ニトロ基、ハロゲン基、シアノ基、アミノ基等のヘテロ原子を含む官能基を有するもの、ナフタレン、アントラセン等の骨格を有するもの、ビスフェノールF、ビスフェノールA、ビスフェノールS、レゾルシノール、ピロガロール等の多官能性フェノールからなる樹脂が挙げられる。   As the phenol resin, any known phenol resin such as novolak type phenol resin and resol type phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, p-phenylphenol, cyclic alkyl-modified phenols such as terpene and dicyclopentadiene, hetero groups such as nitro groups, halogen groups, cyano groups, and amino groups Examples thereof include those having functional groups containing atoms, those having a skeleton such as naphthalene and anthracene, and resins composed of polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

熱硬化性樹脂の含有量は熱可塑性樹脂100重量部に対して5〜400重量部、好ましくは20〜200重量部である。熱硬化性樹脂の含有量が5重量部未満であると、高温での弾性率低下が著しく、半導体装置を実装した機器の使用中に半導体集積回路接続用基板の変形が生じるとともに、加工工程において取り扱いの作業性に欠ける。熱硬化性樹脂の添加量が400重量部を越えると弾性率が高く、線膨張係数が小さくなり、熱応力の緩和効果が小さくなる。   Content of a thermosetting resin is 5-400 weight part with respect to 100 weight part of thermoplastic resins, Preferably it is 20-200 weight part. When the content of the thermosetting resin is less than 5 parts by weight, the modulus of elasticity at high temperatures is significantly reduced, and the semiconductor integrated circuit connecting substrate is deformed during use of the device mounted with the semiconductor device. The handling workability is lacking. When the addition amount of the thermosetting resin exceeds 400 parts by weight, the elastic modulus is high, the linear expansion coefficient is small, and the effect of relaxing the thermal stress is small.

本発明の接着剤組成物に硬化剤および硬化促進剤を添加することは何等制限されない。たとえば、3,3’,5,5’−テトラメチル−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラエチル−4,4’−ジアミノジフェニルメタン、3,3’−ジメチル−5,5’−ジエチル−4,4’−ジアミノジフェニルメタン、3,3’−ジクロロ−4,4’−ジアミノジフェニルメタン、2,2’,3,3’−テトラクロロ−4,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルスルフィド、3,3’−ジアミノベンゾフェノン、3,3’−ジアミノジフェニルスルホン、4,4’−ジアミノジフェニルスルホン、3,4’−ジアミノジフェニルスルホン、4,4’−ジアミノベンゾフェノン、3,4,4’−トリアミノジフェニルスルホン等の芳香族ポリアミン、三フッ化ホウ素トリエチルアミン錯体等の三フッ化ホウ素のアミン錯体、2−アルキル−4−メチルイミダゾール、2−フェニル−4−アルキルイミダゾール等のイミダゾール誘導体、無水フタル酸、無水トリメリット酸等の有機酸、ジシアンジアミド、トリフェニルフォスフィン等が使用できる。これらを単独または2種以上混合して用いても良い。添加量は接着剤組成物100重量部に対して0.1〜50重量部であると好ましい。   The addition of a curing agent and a curing accelerator to the adhesive composition of the present invention is not limited at all. For example, 3,3 ′, 5,5′-tetramethyl-4,4′-diaminodiphenylmethane, 3,3 ′, 5,5′-tetraethyl-4,4′-diaminodiphenylmethane, 3,3′-dimethyl- 5,5′-diethyl-4,4′-diaminodiphenylmethane, 3,3′-dichloro-4,4′-diaminodiphenylmethane, 2,2 ′, 3,3′-tetrachloro-4,4′-diaminodiphenylmethane 4,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'- Aromatic polyamines such as diaminobenzophenone, 3,4,4'-triaminodiphenylsulfone, boron trifluoride triethylamine Boron trifluoride amine complexes such as complexes, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide, triphenyl A phosphine or the like can be used. You may use these individually or in mixture of 2 or more types. The addition amount is preferably 0.1 to 50 parts by weight with respect to 100 parts by weight of the adhesive composition.

本発明において、接着剤層に無機質充填剤を添加することにより、耐リフロー性、打ち抜き性等の加工性、熱伝導性、難燃性を一層向上させることができる。無機質充填剤は接着剤の特性を損なうものでなければ特に限定されないが、水酸化アルミニウム等の無機水酸化物については高温時に分解が起こるため、これに適さない。特にシリカ、酸化アルミニウム、窒化ケイ素、炭化ケイ素は好ましく、これらの少なくとも1種が好ましく用いられる。ここで、シリカは非晶、結晶のいずれであってもよく、それぞれのもつ特性に応じて適宜使いわけることを限定するものではない。   In the present invention, by adding an inorganic filler to the adhesive layer, processability such as reflow resistance and punchability, thermal conductivity, and flame retardancy can be further improved. The inorganic filler is not particularly limited as long as it does not impair the properties of the adhesive, but inorganic hydroxides such as aluminum hydroxide are not suitable because they decompose at high temperatures. In particular, silica, aluminum oxide, silicon nitride, and silicon carbide are preferable, and at least one of these is preferably used. Here, the silica may be either amorphous or crystalline, and it is not limited that the silica can be properly used according to the characteristics of each.

これらの無機質充填材に耐熱性、接着性等の向上を目的としてシランカップリング剤等を用いて表面処理を施してもよい。また、無機質充填剤の形状は特に限定されず、破砕系、球状、鱗片状などが用いられるが、塗料への分散性の点から、球状が好ましく用いられる。さらに無機質充填剤の粒径は特に限定されないが、分散性および塗工性、耐リフロー、熱サイクル性等の信頼性の点で、平均粒径3μm以下、最大粒径10μm以下が用いられ、好ましくは平均粒径1μm以下、最大粒径6μm以下、さらに好ましくは、平均粒径0.7μm以下、最大粒径2μm以下である。尚、ここでいう平均粒径、最大粒径は堀場LA500レーザー回折式粒度分布計で測定を行ったものをいう。また、実装後の信頼性向上のため、粒子の純度は99%を超え、好ましくは99.8%を超え、さらに好ましくは99.9%を超えることが好ましい。99%以下であると、ウラン、トリウム等の放射性不純物より放出されるα線により、半導体素子のソフトエラーを生じ易い。また、含有量は接着剤組成物全体の2〜60重量部、さらには5〜50重量部が好ましい。   These inorganic fillers may be subjected to a surface treatment using a silane coupling agent or the like for the purpose of improving heat resistance, adhesion and the like. Further, the shape of the inorganic filler is not particularly limited, and a crushing system, a spherical shape, a scale shape, and the like are used. From the viewpoint of dispersibility in the paint, a spherical shape is preferably used. Further, the particle size of the inorganic filler is not particularly limited, but an average particle size of 3 μm or less and a maximum particle size of 10 μm or less are preferred from the viewpoint of reliability such as dispersibility and coatability, reflow resistance, thermal cycleability, etc. Has an average particle size of 1 μm or less, a maximum particle size of 6 μm or less, more preferably an average particle size of 0.7 μm or less and a maximum particle size of 2 μm or less. The average particle size and the maximum particle size here are those measured with a Horiba LA500 laser diffraction particle size distribution meter. Further, in order to improve the reliability after mounting, the purity of the particles exceeds 99%, preferably exceeds 99.8%, and more preferably exceeds 99.9%. If it is 99% or less, soft errors of the semiconductor element are likely to occur due to α rays emitted from radioactive impurities such as uranium and thorium. Further, the content is preferably 2 to 60 parts by weight, more preferably 5 to 50 parts by weight of the entire adhesive composition.

以上の成分以外に、接着剤の特性を損なわない範囲で酸化防止剤、イオン捕捉剤などの有機、無機成分を添加することは何ら制限されるものではない。微粒子状の無機成分としては、酸化ジルコニウム、酸化亜鉛、三酸化アンチモン、五酸化アンチモン、酸化マグネシウム、酸化チタン、酸化鉄、酸化コバルト、酸化クロム、タルク等の金属酸化物、炭酸カルシウム等の無機塩、アルミニウムなどの金属微粒子、あるいはカーボンブラック、ガラス等が挙げられ、有機成分としてはスチレン、NBRゴム、アクリルゴム、ポリアミド、ポリイミド、シリコーン等の架橋ポリマが例示される。   In addition to the above components, addition of organic and inorganic components such as antioxidants and ion scavengers is not limited as long as the properties of the adhesive are not impaired. Fine inorganic components include zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, magnesium oxide, titanium oxide, iron oxide, cobalt oxide, chromium oxide, talc and other metal oxides, and inorganic salts such as calcium carbonate. Examples of the organic component include cross-linked polymers such as styrene, NBR rubber, acrylic rubber, polyamide, polyimide, and silicone.

本発明の半導体装置用接着剤シート(以下接着剤シートという)とは、本発明の半導体装置用接着剤組成物を接着剤層とし、かつ1層以上の剥離可能な保護フィルム層を有する構成のものをいう。たとえば、保護フィルム層/接着剤層の2層構成、あるいは保護フィルム層8/接着剤層9/保護フィルム層8の3層構成がこれに該当する(図2)。接着剤層とは接着剤組成物の単膜以外にポリイミド等の絶縁性フィルムが積層された複合構造も含まれる。接着剤シートは加熱処理により硬化度を調節してもよい。硬化度の調節は、接着剤シートを配線基板あるいはICに接着する際の接着剤のフロー過多を防止するとともに、加熱硬化時の水分による発泡を防止する効果がある。硬化度は、たとえば、JIS−K7210に規定される貼り合わせ加工温度における最低粘度(フローテスタ法)で定義できる。フローテスタ法は条件の規定が必要であるが、一例として温度を120℃、ダイ寸法2×5mm、試験圧力9.8MPaとすると3000〜60000Pa・s、好ましくは6000〜30000Pa・sが好適である。   The adhesive sheet for a semiconductor device of the present invention (hereinafter referred to as an adhesive sheet) is composed of the adhesive composition for a semiconductor device of the present invention as an adhesive layer and having one or more peelable protective film layers. Say things. For example, a two-layer structure of protective film layer / adhesive layer or a three-layer structure of protective film layer 8 / adhesive layer 9 / protective film layer 8 corresponds to this (FIG. 2). The adhesive layer includes a composite structure in which an insulating film such as polyimide is laminated in addition to a single film of the adhesive composition. The adhesive sheet may be adjusted in degree of curing by heat treatment. The adjustment of the curing degree has an effect of preventing excessive flow of the adhesive when adhering the adhesive sheet to the wiring board or IC, and preventing foaming due to moisture during heat curing. The degree of cure can be defined by, for example, the minimum viscosity (flow tester method) at the bonding processing temperature specified in JIS-K7210. The flow tester method requires conditions to be defined, but as an example, if the temperature is 120 ° C., the die size is 2 × 5 mm, and the test pressure is 9.8 MPa, 3000 to 60000 Pa · s, preferably 6000 to 30000 Pa · s is suitable. .

接着剤層の厚みは、弾性率および線膨張係数との関係で適宜選択できるが、2〜500μmが好ましく、より好ましくは20〜200μmである。   Although the thickness of an adhesive bond layer can be suitably selected by the relationship with an elasticity modulus and a linear expansion coefficient, 2-500 micrometers is preferable, More preferably, it is 20-200 micrometers.

ここでいう保護フィルム層とは、絶縁体層および導体パターンからなる配線基板層(TABテープ等)あるいは導体パターンが形成されていない層(スティフナー等)に接着剤層を貼り合わせる前に、接着剤層の形態および機能を損なうことなく剥離できれば特に限定されないが、たとえばポリエステル、ポリオレフィン、ポリフェニレンスルフィド、ポリ塩化ビニル、ポリテトラフルオロエチレン、ポリフッ化ビニリデン、ポリフッ化ビニル、ポリビニルブチラール、ポリ酢酸ビニル、ポリビニルアルコール、ポリカーボネート、ポリアミド、ポリイミド、ポリメチルメタクリレート、等のプラスチックフィルム、これらにシリコーンあるいはフッ素化合物等の離型剤のコーティング処理を施したフィルムおよびこれらのフィルムをラミネートした紙、離型性のある樹脂を含浸あるいはコーティングした紙等が挙げられる。保護フィルム層は着色されているとさらに好ましい。保護フィルムを剥離したかどうか目で見て確認することができるため、剥がし忘れを防ぐことができる。   The protective film layer as used herein refers to an adhesive before bonding an adhesive layer to a wiring board layer (TAB tape or the like) composed of an insulator layer and a conductor pattern or a layer (stiffener or the like) where no conductor pattern is formed. Although it will not specifically limit if it can peel without impairing the form and function of a layer, For example, polyester, polyolefin, polyphenylene sulfide, polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, polyvinyl butyral, polyvinyl acetate, polyvinyl alcohol , Polycarbonate, polyamide, polyimide, polymethylmethacrylate, and other plastic films, films coated with a release agent such as silicone or fluorine compound, and these films are laminated. Sorted paper, paper or the like impregnated or coated with a releasing property of a certain resin. More preferably, the protective film layer is colored. Since it can be confirmed visually whether the protective film has been peeled off, forgetting to peel off can be prevented.

接着剤層の両面に保護フィルム層を有する場合、それぞれの保護フィルム層の接着剤層に対する剥離力をF1、F2(F1>F2)としたとき、F1−F2は好ましくは5Nm-1以上、さらに好ましくは15Nm-1以上が必要である。F1−F2が5Nm-1より小さい場合、剥離面がいずれの保護フィルム層側になるかが安定せず、使用上重大な問題となるので好ましくない。また、剥離力F1、F2はいずれも好ましくは1〜200Nm-1 、さらに好ましくは3〜100Nm-1 である。1Nm-1より低い場合は保護フィルム層の脱落が生じ、200Nm-1を超えると剥離が不安定であり、接着剤層が損傷する場合があり、いずれも好ましくない。 When there are protective film layers on both sides of the adhesive layer, F 1 -F 2 is preferably when the peel strength of each protective film layer to the adhesive layer is F 1 , F 2 (F 1 > F 2 ). 5 Nm −1 or more, more preferably 15 Nm −1 or more is required. When F 1 -F 2 is smaller than 5 Nm −1 , which protective film layer side the release surface is on is not stable, which is a serious problem in use. The peeling forces F 1 and F 2 are preferably 1 to 200 Nm −1 , more preferably 3 to 100 Nm −1 . When it is lower than 1 Nm −1 , the protective film layer falls off, and when it exceeds 200 Nm −1 , peeling is unstable and the adhesive layer may be damaged.

また取り扱い性として接着剤のタック性(粘着力)が強いと基材へ接着する際に気泡が入りやすいという難点がある。反対に弱すぎると基材への接着が不十分となって接着剤としての機能を果たさなくなってしまう。生産ラインでは、ある大きさの個片にカットした片面保護フィルム付きの接着剤シートを幾枚も積み重ねておき、それを一枚ずつ連続的にピックアップして基材へ貼りつけるという工程をとる場合がある。このとき一般に2Nを超える粘着力があるとピックアップが困難になる場合があり、好ましくは1.5N以下で少なくとも0.5N以上に粘着力を制御することが望ましい。   Further, if the tackiness (adhesive strength) of the adhesive is strong as handleability, there is a problem that bubbles are likely to enter when adhering to the substrate. On the other hand, if it is too weak, the adhesion to the substrate is insufficient and the function as an adhesive is not achieved. In a production line, when you take a process of stacking several sheets of adhesive sheets with a single-sided protective film cut into individual pieces, picking them up one by one and sticking them to the substrate There is. In this case, generally, if there is an adhesive strength exceeding 2N, pick-up may be difficult, and it is desirable to control the adhesive strength to be preferably 1.5N or less and at least 0.5N or more.

本発明における半導体装置用接着剤組成物および半導体装置用接着剤シートとは、スティフナー、ヒートスプレッダー、半導体素子や配線基板(インターポーザー)用半導体集積回路を実装する際に用いられる、TAB方式のパターン加工テープ、BGAパッケージ用インターポーザー等の半導体接続用基板、リードフレーム固定テープ、LOC固定テープ、半導体素子等の電子部品とリードフレームや絶縁性支持基板などの支持部材との接着すなわちダイボンディング材、ヒートスプレッダ、補強板、シールド材の接着剤、ソルダーレジスト等を作製するために適した接着剤組成物およびそれを用いた接着剤シートのことであり、それら被着体の形状および材料は特に限定されない。中でも、本発明における接着剤組成物は、シリコンなどの半導体基板上に素子が形成された後、切り分けられた半導体集積回路(ベアチップ)が絶縁体層および導体パターンからなる配線基板層に、本発明の接着剤層で接着され、かつ半導体集積回路と配線基板層がワイヤーボンディングにより接続された構造を有する半導体装置に有効である。配線基板層はベアチップの電極パッドとパッケージの外部(プリント基板、TABテープ等)を接続するための導体パターンを有する層であり、絶縁体層の片面または両面に導体パターンが形成されているものである。   The adhesive composition for a semiconductor device and the adhesive sheet for a semiconductor device in the present invention are a TAB pattern used when mounting a semiconductor integrated circuit for a stiffener, a heat spreader, a semiconductor element, or a wiring board (interposer). Bonding of processing parts, semiconductor connection substrates such as BGA package interposers, lead frame fixing tapes, LOC fixing tapes, semiconductor elements and other electronic components and support members such as lead frames and insulating support substrates, that is, die bonding materials, An adhesive composition suitable for producing a heat spreader, a reinforcing plate, an adhesive for a shielding material, a solder resist, and the like, and an adhesive sheet using the same, and the shape and material of the adherend are not particularly limited. . In particular, the adhesive composition according to the present invention is applied to a wiring substrate layer in which a semiconductor integrated circuit (bare chip) separated after an element is formed on a semiconductor substrate such as silicon is formed of an insulator layer and a conductor pattern. This is effective for a semiconductor device having a structure in which a semiconductor integrated circuit and a wiring board layer are connected by wire bonding. The wiring board layer is a layer having a conductor pattern for connecting the electrode pad of the bare chip and the outside of the package (printed board, TAB tape, etc.), and the conductor pattern is formed on one side or both sides of the insulator layer. is there.

ここでいう絶縁体層は、ポリイミド、ポリエステル、ポリフェニレンスルフィド、ポリエーテルスルホン、ポリエーテルエーテルケトン、アラミド、ポリカーボネート、ポリアリレート等のプラスチックあるいはエポキシ樹脂含浸ガラスクロス等の複合材料からなる、厚さ10〜125μmの可撓性を有する絶縁性フィルム、アルミナ、ジルコニア、ソーダガラス、石英ガラス等のセラミック基板が好適であり、これらから選ばれる複数の層を積層して用いても良い。また必要に応じて、絶縁体層に、加水分解、コロナ放電、低温プラズマ、物理的粗面化、易接着コーティング処理等の表面処理を施すことができる。   The insulator layer here is made of a composite material such as polyimide, polyester, polyphenylene sulfide, polyethersulfone, polyetheretherketone, aramid, polycarbonate, polyarylate, or a plastic or epoxy resin-impregnated glass cloth. A ceramic substrate such as an insulating film having a flexibility of 125 μm, alumina, zirconia, soda glass, and quartz glass is suitable, and a plurality of layers selected from these may be laminated. If necessary, the insulator layer can be subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical roughening, and easy adhesion coating treatment.

導体パターンの形成は、一般にサブトラクティブ法あるいはアディティブ法のいずれかで行なわれるが、本発明ではいずれを用いてもよい。サブトラクティブ法では、該絶縁体層に銅箔等の金属板を絶縁性接着剤(本発明の接着剤組成物も用いることができる。)により接着するか、あるいは金属板に該絶縁体層の前駆体を積層し、加熱処理などにより絶縁体層を形成する方法で作製した材料を、薬液処理でエッチングすることによりパターン形成する。ここでいう材料として具体的には、リジッドあるいはフレキシブルプリント基板用銅張り材料やTABテープを例示することができる。一方、アディティブ法では、該絶縁体層に無電解メッキ、電解メッキ、スパッタリング等により直接導体パターンを形成する。いずれの場合も、形成された導体に腐食防止のため耐食性の高い金属がメッキされていてもよい。このようにして作製された配線基板層(A)には必要によりビアホールが形成され、メッキにより両面に形成された導体パターン間がメッキにより接続されていてもよい。   The conductor pattern is generally formed by either the subtractive method or the additive method, but any of them may be used in the present invention. In the subtractive method, a metal plate such as a copper foil is bonded to the insulator layer with an insulating adhesive (the adhesive composition of the present invention can also be used), or the insulator layer is bonded to the metal plate. A pattern is formed by etching a material prepared by a method in which precursors are stacked and an insulator layer is formed by heat treatment or the like by chemical treatment. Specific examples of the material herein include a rigid or copper-clad material for a flexible printed circuit board and a TAB tape. On the other hand, in the additive method, a conductor pattern is directly formed on the insulator layer by electroless plating, electrolytic plating, sputtering, or the like. In either case, the formed conductor may be plated with a metal having high corrosion resistance to prevent corrosion. The wiring board layer (A) thus produced may be provided with via holes as necessary, and the conductive patterns formed on both surfaces by plating may be connected by plating.

接着剤層は、配線基板層と半導体基板の接着に主として用いられる接着剤層である。しかし、配線基板層と他の部材(たとえばICと放熱板等)との接着に用いることは何等制限されない。この接着剤層は半導体集積回路接続用基板に半硬化状態で積層される場合が通常であり、積層前あるいは積層後に30〜200℃の温度で適当な時間予備硬化反応を行なわせて硬化度を調節することができる。   The adhesive layer is an adhesive layer mainly used for bonding the wiring board layer and the semiconductor substrate. However, it is not limited at all to be used for adhesion between the wiring board layer and other members (for example, an IC and a heat sink). This adhesive layer is usually laminated in a semi-cured state on a substrate for connecting a semiconductor integrated circuit. A pre-curing reaction is carried out at a temperature of 30 to 200 ° C. for an appropriate time before or after the lamination to increase the degree of curing. Can be adjusted.

次に本発明の接着剤組成物を用いた半導体装置用接着剤シートの製造方法の例について説明する。   Next, the example of the manufacturing method of the adhesive sheet for semiconductor devices using the adhesive composition of this invention is demonstrated.

(a)本発明の接着剤組成物を溶剤に溶解した塗料を、離型性を有するポリエステルフィルム上に塗布、乾燥する。接着剤層の膜厚は10〜100μmとなるように塗布することが好ましい。乾燥条件は、100〜200℃、1〜5分である。溶剤は特に限定されないが、トルエン、キシレン、クロルベンゼン等の芳香族系、メチルエチルケトン、メチルイソブチルケトン等のケトン系、ジメチルホルムアミド、ジメチルアセトアミド、Nメチルピロリドン等の非プロトン系極性溶剤単独あるいは混合物が好適である。   (A) A paint obtained by dissolving the adhesive composition of the present invention in a solvent is applied on a polyester film having releasability and dried. It is preferable to apply so that the thickness of the adhesive layer is 10 to 100 μm. Drying conditions are 100 to 200 ° C. and 1 to 5 minutes. Solvents are not particularly limited, but aromatics such as toluene, xylene and chlorobenzene, ketones such as methylethylketone and methylisobutylketone, and aprotic polar solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone alone or a mixture are preferred. It is.

(b)(a)のフィルムに上記よりさらに剥離強度の弱い離型性を有するポリエステルあるいはポリオレフィン系の保護フィルム層をラミネートして本発明の接着剤シートを得る。さらに接着剤厚みを増す場合は、該接着剤シートを複数回積層すればよい。ラミネート後に、たとえば40〜70℃で20〜200時間程度熱処理して硬化度を調節してもよい。   (B) The adhesive sheet of the present invention is obtained by laminating a polyester or polyolefin-based protective film layer having a releasability with a lower peel strength than the above to the film of (a). When the adhesive thickness is further increased, the adhesive sheet may be laminated a plurality of times. After lamination, for example, the degree of curing may be adjusted by heat treatment at 40 to 70 ° C. for about 20 to 200 hours.

本発明は、ダイボンディング材、ヒートスプレッダ、補強板、シールド材の接着剤、ソルダーレジスト等を作製するために適した接着剤組成物およびそれを用いた接着剤シートである。   The present invention is an adhesive composition suitable for producing a die bonding material, a heat spreader, a reinforcing plate, an adhesive for a shield material, a solder resist, and the like, and an adhesive sheet using the same.

以下に実施例を挙げて本発明を説明するが、本発明はこれらの実施例に限定されるものではない。実施例の説明に入る前に評価方法について述べる。   EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The evaluation method will be described before the description of the examples.

評価方法
(1)リフロー耐熱性:30mm角に型抜きした50μm厚の接着剤シートの一方の保護フィルムを剥がし、接着剤層の片面のみに保護フィルムがある状態にした後、50シート重ね、室温に1時間放置する。その後、上から順に1シートずつを持ち上げ、30mm角の0.25mm厚SUS304の上に置く。シート同士がくっついている場合は、手でくっついている部分を剥がして行う。60℃、1MPa、1m/分の条件でロールラミネートした後、続いて接着剤シート上に導体幅100μm、導体間距離100μmの模擬パターンを形成した30mm角の半導体接続用基板を150℃、5MPa、1m/分の条件でロールラミネートした。その後、100℃、1時間、170℃、2時間の条件で硬化しリフロー耐熱性評価用サンプルを作製した。30mm角サンプル20個を30℃/70%RHの条件下、168時間吸湿させた後、すみやかに温度設定のされた赤外線リフロー炉を通過させて膨れが発生したか否かを超音波探傷機により観察した。赤外線リフロー炉の最高温度は260℃、270℃、280℃の3条件で行い、保持時間は各10秒である。評価用サンプル20個片中で膨れが発生したサンプル数をカウントした。
Evaluation method (1) Reflow heat resistance: After peeling off one protective film of a 50 μm-thick adhesive sheet die-cut to 30 mm square, and having a protective film only on one side of the adhesive layer, 50 sheets are stacked, room temperature Leave for 1 hour. Thereafter, the sheets are lifted one by one from the top and placed on a 30 mm square 0.25 mm thick SUS304. If the sheets are attached to each other, remove the part that is attached by hand. After roll laminating under conditions of 60 ° C., 1 MPa, 1 m / min, a 30 mm square semiconductor connection substrate in which a simulated pattern with a conductor width of 100 μm and a distance between conductors of 100 μm is formed on an adhesive sheet is 150 ° C., 5 MPa, Roll lamination was performed under conditions of 1 m / min. Then, it hardened | cured on the conditions of 100 degreeC, 1 hour, 170 degreeC, and 2 hours, and produced the sample for reflow heat resistance evaluation. An ultrasonic flaw detector was used to detect whether or not swell occurred after 20 samples of 30 mm square were moisture-absorbed for 168 hours under conditions of 30 ° C./70% RH and then immediately passed through an infrared reflow oven with temperature set. Observed. The maximum temperature of the infrared reflow furnace is 260 ° C., 270 ° C., and 280 ° C., and the holding time is 10 seconds each. The number of samples in which swelling occurred in 20 evaluation samples was counted.

(2)接着力:0.35mm厚のSUS304上に膜厚40μmの接着剤シートを130℃、1MPaの条件でラミネートした。その後、ポリイミドフィルム(75μm:宇部興産(株)製「ユーピレックス75S」)を先のSUS上にラミネートした接着剤シート面に130℃、1MPaの条件でさらにラミネートした後、エアオーブン中で、100℃、1時間、170℃、2時間の順次加熱処理を行い、評価用サンプルを作製した。ポリイミドフィルムを5mm幅にスリットした後、5mm幅のポリイミドフィルムを90°方向に50mm/分の速度で剥離し、その際の接着力を測定した。   (2) Adhesive strength: An adhesive sheet having a thickness of 40 μm was laminated on SUS304 having a thickness of 0.35 mm under the conditions of 130 ° C. and 1 MPa. Thereafter, a polyimide film (75 μm: “UPILEX 75S” manufactured by Ube Industries, Ltd.) was further laminated on the adhesive sheet surface laminated on the previous SUS under the conditions of 130 ° C. and 1 MPa, and then in an air oven at 100 ° C. A sample for evaluation was prepared by sequentially performing heat treatment for 1 hour at 170 ° C. for 2 hours. After slitting the polyimide film to a width of 5 mm, the polyimide film having a width of 5 mm was peeled at a rate of 50 mm / min in the 90 ° direction, and the adhesive force at that time was measured.

(3)タック性(粘着力):20mm角に型抜きした膜厚50μmの接着剤シートの両面に貼り合せているカバーフィルムを剥がす。そのサンプルをタッキング試験機((株)レスカ製TAC−IIを使用)にセットする。プローブの先端をサンプルの被着面に加圧力50gで押しつけ、次に引き離し速度120mm/分でプローブの先端を被着面から引き離す。このときの応力のピーク値をタック値とした。   (3) Tackiness (adhesive strength): The cover film bonded to both surfaces of an adhesive sheet having a thickness of 50 μm die-cut to 20 mm square is peeled off. The sample is set in a tacking tester (using TAC-II manufactured by Resuka Co., Ltd.). The tip of the probe is pressed against the adherend surface of the sample with an applied pressure of 50 g, and then the tip of the probe is separated from the adherend surface at a separation speed of 120 mm / min. The peak value of the stress at this time was taken as the tack value.

(4)エポキシ当量:まず精評した試料(約3g)をフラスコに採取し、そこにメチルエチルケトン(MEK)20mlを加えて溶解した後、0.2規定の塩酸(MEK溶液)25mlを加える。これを1時間放置後、MEKを40ml加えて撹拌しながらさらに水を10ml加える。この溶液を0.5規定の水酸化カリウム(エタノール溶液)で滴定して1分間以上赤色になった滴定量を終点とした。エポキシ当量は次の式によって計算される。   (4) Epoxy equivalent: First, a well-sampled sample (about 3 g) is collected in a flask, 20 ml of methyl ethyl ketone (MEK) is added and dissolved therein, and then 25 ml of 0.2 N hydrochloric acid (MEK solution) is added. After leaving this for 1 hour, 40 ml of MEK is added and another 10 ml of water is added with stirring. This solution was titrated with 0.5 N potassium hydroxide (ethanol solution), and the titration that turned red for 1 minute or more was taken as the end point. The epoxy equivalent is calculated by the following formula:

エポキシ当量(単位:g/eq)=[m×NV/(B−A)×0.5×F]×1000。   Epoxy equivalent (unit: g / eq) = [m × NV / (BA) × 0.5 × F] × 1000.

ここでmはサンプルの重量(g)、NVは固形分比率、Bはブランクの滴定量(ml)、Aは試料の滴定量、Fは0.5規定の水酸化カリウムのファクターである。   Here, m is the weight (g) of the sample, NV is the solid content ratio, B is the titration amount of the blank (ml), A is the titration amount of the sample, and F is the factor of 0.5 N potassium hydroxide.

(5)重量平均分子量:ここでは(株)日立製作所製の高速液体クロマトグラフ装置655A型を使用した。移動相としてテトラヒドロフラン試薬1級、移動相流量を2ml/分で温度を35〜40℃に保ったカラムに試料濃度30mg/mlで注入し、ポリスチレンゲルを検量線として重量平均分子量を算出した。   (5) Weight average molecular weight: A high performance liquid chromatograph 655A type manufactured by Hitachi, Ltd. was used here. It was injected at a sample concentration of 30 mg / ml into a column having a tetrahydrofuran reagent grade 1 as the mobile phase, a mobile phase flow rate of 2 ml / min and a temperature of 35-40 ° C., and a weight average molecular weight was calculated using polystyrene gel as a calibration curve.

実施例1〜5、比較例1〜2
(接着剤組成物及び接着剤シートの作製方法)
無機質充填剤として、下記実施例に示したシリカあるいは水酸化アルミニウム22重量%をトルエンと濃度が20重量%になるように混合した後、サンドミル処理して分散液を作製した。この分散液に、下記実施例に示したエポキシ基含有アクリル系共重合体を55重量%、熱硬化性樹脂として下記実施例に示したビスフェノールA型エポキシ樹脂を20重量%、硬化剤として4,4’−ジアミノジフェニルスルホンを1.5重量%、さらに2−ヘプタデシルイミダゾールを0.1重量%および全体の固形分濃度が20重量%になるようにメチルエチルケトンを加え、30℃で撹拌、混合して接着剤溶液を作製した。この接着剤溶液をバーコータで、シリコーン離型剤付きの厚さ38μmのポリエチレンテレフタレートフィルム(藤森工業(株)製“フィルムバイナ”GT)に約50μmの乾燥厚さとなるように塗布し、120℃で5分間乾燥し、下記実施例に示した保護フィルムを貼り合わせて、本発明の半導体装置用接着剤シートを作製した。
Examples 1-5, Comparative Examples 1-2
(Adhesive composition and method for producing adhesive sheet)
As an inorganic filler, silica or aluminum hydroxide 22% by weight shown in the following examples was mixed with toluene so as to have a concentration of 20% by weight, followed by sand mill treatment to prepare a dispersion. In this dispersion, 55% by weight of the epoxy group-containing acrylic copolymer shown in the following examples, 20% by weight of the bisphenol A type epoxy resin shown in the following examples as a thermosetting resin, and 4,4% as a curing agent. Methyl ethyl ketone was added so that 4'-diaminodiphenylsulfone was 1.5 wt%, 2-heptadecylimidazole was 0.1 wt%, and the total solid content was 20 wt%, and the mixture was stirred and mixed at 30 ° C. Thus, an adhesive solution was prepared. This adhesive solution was applied with a bar coater to a 38 μm thick polyethylene terephthalate film with a silicone release agent (“Film Vina” GT manufactured by Fujimori Kogyo Co., Ltd.) to a dry thickness of about 50 μm, and at 120 ° C. It dried for 5 minutes, the protective film shown in the following Example was bonded together, and the adhesive agent sheet for semiconductor devices of this invention was produced.

実施例1
重量比でブチルアクリレート43部、アクリロニトリル33部、グリシジルメタクリレート24部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Aを得た。この共重合体のエポキシ当量は700g/eq、重量平均分子量は673000であった。得られたエポキシ基含有アクリル共重合体、ビスフェノールA型エポキシ樹脂(商品名、”エピコート1001”、エポキシ当量450、ジャパンエポキシレジン(株)製)、硬化剤として4,4’−ジアミノジフェニルスルホン(商品名、”スミキュアS”、住友化学工業(株)製)および2−ヘプタデシルイミダゾール(商品名、”キュアゾールC17Z”、四国化成工業(株)製)、無機質充填剤としてシリカ(商品名、”SO−E1”、(株)アドマテックス製)を用いて、上記の組成比で調合して接着剤組成物および接着剤シートを作製した。
Example 1
43 parts of butyl acrylate, 33 parts of acrylonitrile and 24 parts of glycidyl methacrylate were polymerized by a suspension polymerization method in a weight ratio to obtain an epoxy group-containing acrylic copolymer A. This copolymer had an epoxy equivalent of 700 g / eq and a weight average molecular weight of 673,000. The obtained epoxy group-containing acrylic copolymer, bisphenol A type epoxy resin (trade name, “Epicoat 1001”, epoxy equivalent 450, manufactured by Japan Epoxy Resins Co., Ltd.), 4,4′-diaminodiphenylsulfone (as a curing agent) Trade name, “SUMICURE S”, manufactured by Sumitomo Chemical Co., Ltd.) and 2-heptadecylimidazole (trade name, “CURAZOLE C17Z”, manufactured by Shikoku Kasei Kogyo Co., Ltd.), silica as a mineral filler (trade name, “ SO-E1 ″ (manufactured by Admatechs Co., Ltd.) was used to prepare an adhesive composition and an adhesive sheet by blending at the above composition ratio.

実施例2
重量比でブチルアクリレート50部、アクリロニトリル39部、グリシジルメタクリレート11部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Bを得た。この共重合体のエポキシ当量は1500g/eq、重量平均分子量は645000であった。実施例1において、エポキシ基含有アクリル共重合体Aをエポキシ基含有アクリル共重合体Bに変更した他は実施例1と同様にして、接着剤組成物および接着剤シートを作製した。
Example 2
By weight, 50 parts of butyl acrylate, 39 parts of acrylonitrile, and 11 parts of glycidyl methacrylate were polymerized by suspension polymerization to obtain an epoxy group-containing acrylic copolymer B. This copolymer had an epoxy equivalent of 1500 g / eq and a weight average molecular weight of 645,000. An adhesive composition and an adhesive sheet were prepared in the same manner as in Example 1 except that the epoxy group-containing acrylic copolymer A was changed to the epoxy group-containing acrylic copolymer B in Example 1.

実施例3
重量比でブチルアクリレート43部、アクリロニトリル33部、グリシジルメタクリレート24部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Cを得た。この共重合体のエポキシ当量は700g/eq、重量平均分子量は454000であった。実施例1において、エポキシ基含有アクリル共重合体Aをエポキシ基含有アクリル共重合体Cに変更した他は実施例1と同様にして、接着剤組成物および接着剤シートを作製した。
Example 3
43 parts of butyl acrylate, 33 parts of acrylonitrile and 24 parts of glycidyl methacrylate were polymerized by a suspension polymerization method in a weight ratio to obtain an epoxy group-containing acrylic copolymer C. The epoxy equivalent of this copolymer was 700 g / eq, and the weight average molecular weight was 454000. An adhesive composition and an adhesive sheet were prepared in the same manner as in Example 1 except that the epoxy group-containing acrylic copolymer A in Example 1 was changed to the epoxy group-containing acrylic copolymer C.

実施例4
重量比でブチルアクリレート48部、アクリロニトリル37部、グリシジルメタクリレート15部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Eを得た。この共重合体のエポキシ当量は1100g/eq、重量平均分子量は950000であった。実施例1において、エポキシ基含有アクリル共重合体Aをエポキシ基含有アクリル共重合体Eに変更した他は実施例1と同様にして、接着剤組成物および接着剤シートを作製した。
Example 4
48 parts of butyl acrylate, 37 parts of acrylonitrile and 15 parts of glycidyl methacrylate were polymerized by a suspension polymerization method in a weight ratio to obtain an epoxy group-containing acrylic copolymer E. The epoxy equivalent of this copolymer was 1100 g / eq, and the weight average molecular weight was 950000. An adhesive composition and an adhesive sheet were prepared in the same manner as in Example 1 except that the epoxy group-containing acrylic copolymer A was changed to the epoxy group-containing acrylic copolymer E in Example 1.

実施例5
重量比でブチルアクリレート50部、アクリロニトリル39部、グリシジルメタクリレート11部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Fを得た。この共重合体のエポキシ当量は1500g/eq、重量平均分子量は661000であった。実施例1において、エポキシ基含有アクリル共重合体Aをエポキシ基含有アクリル共重合体Fに変更し、無機質充填剤として水酸化アルミニウム(商品名、”ハイジライトH−42I”、昭和電工(株)製)した他は実施例1と同様にして、接着剤組成物および接着剤シートを作製した。
Example 5
Epoxy group-containing acrylic copolymer F was obtained by polymerizing 50 parts by weight of butyl acrylate, 39 parts of acrylonitrile, and 11 parts of glycidyl methacrylate by suspension polymerization. The epoxy equivalent of this copolymer was 1500 g / eq, and the weight average molecular weight was 661000. In Example 1, the epoxy group-containing acrylic copolymer A was changed to the epoxy group-containing acrylic copolymer F, and aluminum hydroxide (trade name, “Hijilite H-42I”, Showa Denko Co., Ltd.) was used as the inorganic filler. The adhesive composition and the adhesive sheet were produced in the same manner as in Example 1 except that the production was performed.

比較例1
重量比でブチルアクリレート52部、アクリロニトリル39部、グリシジルメタクリレート9部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Gを得た。この共重合体のエポキシ当量は1850g/eq、重量平均分子量は303000であった。実施例1において、エポキシ基含有アクリル共重合体Aをエポキシ基含有アクリル共重合体Gに変更した他は実施例1と同様にして、接着剤組成物および接着剤シートを作製した。
Comparative Example 1
52 parts of butyl acrylate, 39 parts of acrylonitrile, and 9 parts of glycidyl methacrylate were polymerized by a suspension polymerization method in a weight ratio to obtain an epoxy group-containing acrylic copolymer G. The epoxy equivalent of this copolymer was 1850 g / eq, and the weight average molecular weight was 303,000. An adhesive composition and an adhesive sheet were prepared in the same manner as in Example 1 except that the epoxy group-containing acrylic copolymer A was changed to the epoxy group-containing acrylic copolymer G in Example 1.

比較例2
重量比でブチルアクリレート52部、アクリロニトリル40部、グリシジルメタクリレート8部を懸濁重合法によって重合し、エポキシ基含有アクリル共重合体Hを得た。この共重合体のエポキシ当量は2100g/eq、重量平均分子量は1124000であった。実施例1において、エポキシ基含有アクリル共重合体Aをエポキシ基含有アクリル共重合体Hに変更した他は実施例1と同様にして、接着剤組成物および接着剤シートを作製した。
Comparative Example 2
52 parts of butyl acrylate, 40 parts of acrylonitrile, and 8 parts of glycidyl methacrylate were polymerized by a suspension polymerization method in a weight ratio to obtain an epoxy group-containing acrylic copolymer H. The epoxy equivalent of this copolymer was 2100 g / eq, and the weight average molecular weight was 1124000. An adhesive composition and an adhesive sheet were prepared in the same manner as in Example 1 except that the epoxy group-containing acrylic copolymer A in Example 1 was changed to the epoxy group-containing acrylic copolymer H.

実施例1〜5及び比較例1〜2で作製した接着剤シートのリフロー耐熱性、接着力、およびタック性について評価した結果を表1に示す。   Table 1 shows the results of evaluating the reflow heat resistance, adhesive strength, and tackiness of the adhesive sheets prepared in Examples 1 to 5 and Comparative Examples 1 and 2.

Figure 2005281553
Figure 2005281553

本発明の半導体装置用接着剤組成物および半導体装置用接着剤シートを用いたBGA型半導体装置(BOC)の一態様の断面図。Sectional drawing of the one aspect | mode of the BGA type semiconductor device (BOC) using the adhesive composition for semiconductor devices of this invention, and the adhesive agent sheet for semiconductor devices. 本発明の半導体装置用接着剤シートの一態様の断面図。Sectional drawing of the one aspect | mode of the adhesive agent sheet for semiconductor devices of this invention.

符号の説明Explanation of symbols

1 半導体集積回路
2、9 本発明の接着剤組成物より構成される接着剤層
3 配線基板
4 半田ボール接続用の導体部
5 ボンディングワイヤー
6 半田ボール
7 封止樹脂
8 本発明の接着剤シートを構成する保護フィルム層
DESCRIPTION OF SYMBOLS 1 Semiconductor integrated circuit 2 and 9 Adhesive layer 3 comprised from the adhesive composition of this invention Wiring board 4 Conductor part 5 for connecting a solder ball Bonding wire 6 Solder ball 7 Sealing resin 8 Adhesive sheet of this invention Constructing protective film layer

Claims (5)

熱可塑性樹脂および熱硬化性樹脂を含有する半導体装置用接着剤組成物であって、その熱可塑性樹脂がエポキシ基含有アクリル系共重合体であり、かつそのエポキシ当量が0を超えて1500g/eq以下であることを特徴とする半導体装置用接着剤組成物。 An adhesive composition for a semiconductor device comprising a thermoplastic resin and a thermosetting resin, wherein the thermoplastic resin is an epoxy group-containing acrylic copolymer, and the epoxy equivalent exceeds 0 and is 1500 g / eq. The adhesive composition for semiconductor devices characterized by the following. エポキシ基含有アクリル系共重合体の重量平均分子量が40万〜100万の範囲にあることを特徴とする請求項1記載の半導体装置用接着剤組成物。 The adhesive composition for a semiconductor device according to claim 1, wherein the epoxy group-containing acrylic copolymer has a weight average molecular weight in the range of 400,000 to 1,000,000. 熱硬化性樹脂が、エポキシ樹脂および/またはフェノール樹脂であることを特徴とする請求項1記載の半導体装置用接着剤組成物。 The adhesive composition for a semiconductor device according to claim 1, wherein the thermosetting resin is an epoxy resin and / or a phenol resin. 接着剤組成物がシリカ、酸化アルミニウム、窒化ケイ素、炭化ケイ素から1種以上選ばれる無機質充填材を含有することを特徴とする請求項1記載の半導体装置用接着剤組成物。 2. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains one or more inorganic fillers selected from silica, aluminum oxide, silicon nitride, and silicon carbide. 請求項1〜4のいずれか記載の半導体装置用接着剤組成物を接着剤層とし、1層以上の剥離可能な保護フィルム層を有する半導体装置用接着剤シート。 The adhesive sheet for semiconductor devices which uses the adhesive composition for semiconductor devices in any one of Claims 1-4 as an adhesive layer, and has one or more peelable protective film layers.
JP2004098776A 2004-03-30 2004-03-30 Adhesive composition for semiconductor device and adhesive sheet for semiconductor device using it Pending JP2005281553A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010180334A (en) * 2009-02-06 2010-08-19 Shin-Etsu Chemical Co Ltd Adhesive composition, adhesive sheet, and dicing die attach film
JP2011079959A (en) * 2009-10-07 2011-04-21 Sony Chemical & Information Device Corp Thermosetting adhesive composition, thermosetting adhesive sheet, method for producing the same and reinforced flexible printed wiring board
US20160336290A1 (en) * 2014-11-17 2016-11-17 Lg Chem, Ltd. Adhesive resin composition for bonding semiconductors and adhesive film for semiconductors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010180334A (en) * 2009-02-06 2010-08-19 Shin-Etsu Chemical Co Ltd Adhesive composition, adhesive sheet, and dicing die attach film
JP2011079959A (en) * 2009-10-07 2011-04-21 Sony Chemical & Information Device Corp Thermosetting adhesive composition, thermosetting adhesive sheet, method for producing the same and reinforced flexible printed wiring board
US20160336290A1 (en) * 2014-11-17 2016-11-17 Lg Chem, Ltd. Adhesive resin composition for bonding semiconductors and adhesive film for semiconductors
US9953945B2 (en) * 2014-11-17 2018-04-24 Lg Chem, Ltd. Adhesive resin compostition for bonding semiconductors and adhesive film for semiconductors

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