JP2005251273A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

Info

Publication number
JP2005251273A
JP2005251273A JP2004059414A JP2004059414A JP2005251273A JP 2005251273 A JP2005251273 A JP 2005251273A JP 2004059414 A JP2004059414 A JP 2004059414A JP 2004059414 A JP2004059414 A JP 2004059414A JP 2005251273 A JP2005251273 A JP 2005251273A
Authority
JP
Japan
Prior art keywords
word line
bit line
current selection
memory cell
line current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004059414A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005251273A5 (enExample
Inventor
Hiroaki Tanizaki
弘晃 谷崎
Takaharu Tsuji
高晴 辻
Tsukasa Oishi
司 大石
Hideto Hidaka
秀人 日高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Renesas Device Design Corp
Original Assignee
Renesas Technology Corp
Renesas Device Design Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Renesas Device Design Corp filed Critical Renesas Technology Corp
Priority to JP2004059414A priority Critical patent/JP2005251273A/ja
Publication of JP2005251273A publication Critical patent/JP2005251273A/ja
Publication of JP2005251273A5 publication Critical patent/JP2005251273A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2004059414A 2004-03-03 2004-03-03 半導体記憶装置 Pending JP2005251273A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004059414A JP2005251273A (ja) 2004-03-03 2004-03-03 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004059414A JP2005251273A (ja) 2004-03-03 2004-03-03 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005251273A true JP2005251273A (ja) 2005-09-15
JP2005251273A5 JP2005251273A5 (enExample) 2007-04-05

Family

ID=35031602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004059414A Pending JP2005251273A (ja) 2004-03-03 2004-03-03 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2005251273A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013187044A1 (ja) 2012-06-12 2013-12-19 パナソニック株式会社 洗濯機システム
CN108257635A (zh) * 2016-12-28 2018-07-06 上海磁宇信息科技有限公司 一种磁性随机存储器及其读取方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH087568A (ja) * 1994-06-27 1996-01-12 Nec Corp ダイナミックram
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2003203474A (ja) * 2001-10-26 2003-07-18 Mitsubishi Electric Corp 薄膜磁性体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH087568A (ja) * 1994-06-27 1996-01-12 Nec Corp ダイナミックram
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2003203474A (ja) * 2001-10-26 2003-07-18 Mitsubishi Electric Corp 薄膜磁性体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013187044A1 (ja) 2012-06-12 2013-12-19 パナソニック株式会社 洗濯機システム
CN108257635A (zh) * 2016-12-28 2018-07-06 上海磁宇信息科技有限公司 一种磁性随机存储器及其读取方法
CN108257635B (zh) * 2016-12-28 2020-11-10 上海磁宇信息科技有限公司 一种磁性随机存储器及其读取方法

Similar Documents

Publication Publication Date Title
US6894922B1 (en) Memory device capable of performing high speed reading while realizing redundancy replacement
US8625339B2 (en) Multi-cell per memory-bit circuit and method
KR100505769B1 (ko) 데이터 판독 참조용 더미셀을 구비한 박막 자성체 기억 장치
JP5164027B2 (ja) 半導体記憶装置
JP5661902B2 (ja) 半導体記憶装置
JP5190499B2 (ja) 半導体記憶装置
US9728239B2 (en) Semiconductor memory device
JP4637388B2 (ja) 薄膜磁性体記憶装置
JP2013504835A (ja) スピン移動トルクランダムアクセスメモリのための階層状データ経路を提供する方法およびシステム
JP4274790B2 (ja) 磁気記憶装置
JP2010040123A (ja) 半導体装置
KR100560133B1 (ko) 박막자성체 기억장치
JP2004086934A (ja) 不揮発性記憶装置
JP2013196717A (ja) 半導体記憶装置およびその駆動方法
US20150269995A1 (en) Semiconductor device
JP2016167333A (ja) 疑似ページモードのメモリアーキテクチャおよび方法
JP2003162898A (ja) 薄膜磁性体記憶装置
JP2008147437A (ja) 磁気抵抗性記憶装置
JP2005251273A (ja) 半導体記憶装置
CN112927737B (zh) 使用磁性隧道结的非易失寄存器
US20170047103A1 (en) Semiconductor storage device
JP5331998B2 (ja) 不揮発性半導体記憶装置
JP2010027202A (ja) 磁性体記憶装置
WO2011055420A1 (ja) 半導体装置
JP2005063553A (ja) 磁性体記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091117

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100316