JP2005243960A - Solid state image sensor and its manufacturing method - Google Patents
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本発明は、CCD、CMOSなどの固体撮像素子およびその製造方法に関するものである。 The present invention relates to a solid-state imaging device such as a CCD and a CMOS and a manufacturing method thereof.
従来の固体撮像装置および製造方法を図5を参照して説明する。図5は、従来の固体撮像装置の概略構成を示す断面図である。この図5において、配線基板18に実装された半導体ベアチップ19の裏面に結像光学系の撮像レンズの収差により生じる像面湾曲に応じた球面状の湾曲面20を形成し、この半導体ベアチップ19の湾曲面形状に沿わせて、固体撮像素子21を張り合わせることにより固体撮像装置が構成されていた。(例えば、特許文献1参照)
A conventional solid-state imaging device and manufacturing method will be described with reference to FIG. FIG. 5 is a cross-sectional view showing a schematic configuration of a conventional solid-state imaging device. In FIG. 5, a spherical
この発明により固体撮像装置の小型化ができ、また結像光学系の撮像レンズによる収差を補正できるため、画面全体にわたって焦点が合った固体撮像装置ができた。 According to the present invention, the solid-state imaging device can be reduced in size, and the aberration caused by the imaging lens of the imaging optical system can be corrected, so that a solid-state imaging device focused on the entire screen was obtained.
しかし、このような固体撮像装置の製造方法は、半導体ベアチップの裏面を湾曲形状にする切削加工やドライエッチング加工など大変困難という課題があった。また、固体撮像素子が薄いため、取り扱いが不便であった。さらに、半導体ベアチップと固体撮像素子の位置合わせ、圧縮空気により半導体ベアチップ裏面と固体撮像素子裏面の貼り合わせが複雑な工程であるという課題があった。
本発明は、上記課題を解消し、固体撮像素子の受光面に容易に湾曲形状を形成する製造方法を提案する。
However, such a manufacturing method of a solid-state imaging device has a problem that it is very difficult such as a cutting process or a dry etching process in which the back surface of the semiconductor bare chip is curved. In addition, since the solid-state imaging device is thin, handling is inconvenient. Furthermore, there is a problem that the alignment of the semiconductor bare chip and the solid-state image sensor and the bonding of the back surface of the semiconductor bare chip and the back surface of the solid-state image sensor with compressed air are complicated processes.
The present invention proposes a manufacturing method that solves the above problems and easily forms a curved shape on the light receiving surface of a solid-state imaging device.
本発明は、受光面に光学系の収差により生じる像面湾曲に対応した湾曲を形成した固体撮像素子の製造方法において、受光面の反対面に凹部を設け、真空中で受光面の反対面に台座を接着する固体撮像素子の製造方法とする。 The present invention provides a method for manufacturing a solid-state imaging device in which a curvature corresponding to curvature of field caused by an aberration of an optical system is formed on a light receiving surface, and a concave portion is provided on the opposite surface of the light receiving surface, and the opposite surface of the light receiving surface is formed in a vacuum. A method for manufacturing a solid-state imaging device in which a pedestal is bonded is used.
本発明は、受光面に光学系の収差により生じる像面湾曲に対応した湾曲を形成した固体撮像素子の製造方法において、受光面の反対面に凹部を設け、受光面より機械的応力または圧縮空気を加えて湾曲形状を形成後、受光面の反対面に台座を接着する固体撮像素子の製造方法とする。 The present invention relates to a method of manufacturing a solid-state imaging device in which a curvature corresponding to curvature of field caused by aberration of an optical system is formed on a light receiving surface, and a concave portion is provided on the opposite surface of the light receiving surface, and mechanical stress or compressed air is applied from the light receiving surface. Then, after forming a curved shape, a manufacturing method of a solid-state imaging device in which a pedestal is bonded to the opposite surface of the light receiving surface.
本発明は、受光面に光学系の収差により生じる像面湾曲に対応した湾曲を形成した固体撮像素子の製造方法において、受光面の反対面に凹部を設け、受光面より機械的応力または圧縮空気を加えて湾曲形状を形成しこの空間に接着剤を注入し、接着剤を硬化する固体撮像素子の製造方法とする。 The present invention relates to a method of manufacturing a solid-state imaging device in which a curvature corresponding to curvature of field caused by aberration of an optical system is formed on a light receiving surface, and a concave portion is provided on the opposite surface of the light receiving surface, and mechanical stress or compressed air is applied from the light receiving surface. To form a curved shape, inject an adhesive into this space, and cure the adhesive.
請求項1記載の製造方法によれば、受光面の反対面に凹部を設け、真空中で受光面の反対面に台座を接着するため、容易に湾曲形状を有した固体撮像素子が製造できる。また、受光面に直接触れることなく湾曲形状が形成できるため、受光面を傷つけることがない。さらに、受光面の厚みを変えることにより所望の湾曲形状を得ることができる。また、真空中の圧力を変えることによっても所望の湾曲形状を得ることができる。 According to the manufacturing method of the first aspect, since the concave portion is provided on the opposite surface of the light receiving surface and the pedestal is bonded to the opposite surface of the light receiving surface in a vacuum, a solid-state imaging device having a curved shape can be easily manufactured. Further, since the curved shape can be formed without directly touching the light receiving surface, the light receiving surface is not damaged. Furthermore, a desired curved shape can be obtained by changing the thickness of the light receiving surface. A desired curved shape can also be obtained by changing the pressure in vacuum.
請求項2記載の製造方法によれば、受光面の反対面に凹部を設け、受光面より機械的応力または圧縮空気を加えて湾曲形状を形成後、受光面の反対面に台座を接着するため、容易に湾曲形状を有した固体撮像素子が製造できる。さらに、受光面の厚みを変えることにより所望の湾曲形状を得ることがでる。また、受光面への加圧の際に機械的応力や圧縮空気圧を変えることによっても所望の湾曲形状を得ることができる。 According to the manufacturing method of claim 2, the concave portion is provided on the opposite surface of the light receiving surface, and a pedestal is bonded to the opposite surface of the light receiving surface after forming a curved shape by applying mechanical stress or compressed air from the light receiving surface. A solid-state imaging device having a curved shape can be easily manufactured. Furthermore, a desired curved shape can be obtained by changing the thickness of the light receiving surface. A desired curved shape can also be obtained by changing mechanical stress or compressed air pressure when the light receiving surface is pressed.
請求項3記載の製造方法によれば、受光面の反対面に凹部を設け、受光面より機械的応力または圧縮空気を加えて湾曲形状を形成し、この空間に接着剤を入れ接着剤を硬化させるので、容易に湾曲形状を有した固体撮像素子が製造できる。さらに、湾曲形状が接着剤で固定されているので、受光面への大きな圧力変化があっても湾曲形状が保持できる。また、受光面の厚みを変えることにより所望の湾曲形状を得ることがでる。また、受光面への加圧の際に機械的応力や圧縮空気圧を変えることによっても所望の湾曲形状を得ることができる。
According to the manufacturing method of
本発明を実施するための最良の形態を説明する。本発明の製造方法によれば、受光面の反対面に凹部を設け、真空あるいは、機械的応力、圧縮空気を利用し受光面の反対面に台座を接着するか、あるいは凹部に接着剤を注入し硬化させるので、容易に湾曲形状を有した固体撮像素子が製造できる。 The best mode for carrying out the present invention will be described. According to the manufacturing method of the present invention, a recess is provided on the opposite surface of the light receiving surface, and a base is bonded to the opposite surface of the light receiving surface using vacuum, mechanical stress or compressed air, or an adhesive is injected into the recess. Therefore, a solid-state imaging device having a curved shape can be easily manufactured.
本発明の実施例1について、図1および図4を参照して説明する。図1は、固体撮像素子の製造工程を示す断面図である。図4は、固体撮像素子ベアチップ斜視図を示す。図4の1は、受光素子エリアを示す。図1(a)の2は加工前の固体撮像素子ベアチップである。図1(b)の3は、受光面の反対面を所望の湾曲形状が形成できる厚みにエッチングあるいは切削加工し、凹部とした加工後の固体撮像素子ベアチップである。但し、受光面の厚みは大気圧1100hpa〜500hpa程度の気圧の影響を受けても、撮像に影響を与えない厚みとする。図1(b)加工後の固体撮像素子ベアチップ3の凹部の大きさは、図4の受光素子エリア1より大きければ良い。図1(c)の4は、固体撮像素子を実装する台座である。図1(d)は、完成した固体撮像素子である。
A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view illustrating a manufacturing process of a solid-state imaging device. FIG. 4 is a perspective view of a solid-state image sensor bare chip. 4 in FIG. 4 indicates a light receiving element area. 2 in FIG. 1A is a solid-state image sensor bare chip before processing.
図1(b)において加工後の固体撮像素子ベアチップ3を真空炉内に入れ、図1(c)のように台座4を受光面の反対面に凹部空間5の機密性が保持できるように接着する。このとき、完成後に所望の湾曲形状になるように真空圧を調整する。次に固体撮像素子ベアチップ3と台座4が接着されている状態で、真空炉を大気圧に開放することにより、凹部空間5内の圧力と大気圧との差圧が生じ、受光面に直接触れることなく受光面が所望の湾曲形状となり、図1(d)の固体撮像素子ができる。
In FIG. 1 (b), the processed solid-state image
本発明の実施例2について、図2および図4を参照して説明する。図2は、固体撮像素子の製造工程を示す断面図である。図4は、固体撮像素子ベアチップ斜視図を示す。図4の1は、受光素子エリアを示す。図2(a)の6は加工前の固体撮像素子ベアチップである。図2(b)の7は、受光面の反対面を完成後に所望の湾曲形状が形成できる厚みにエッチングあるいは切削加工し、凹部とした加工後の固体撮像素子ベアチップである。但し、受光面の厚みは大気圧1100hpa〜500hpa程度の気圧の影響を受けても、撮像に影響を与えない厚みとする。図2(b)加工後の固体撮像素子ベアチップ7の凹部の大きさは、図4の受光素子エリア1より大きければ良い。図2(e)の8は、固体撮像素子を実装する台座である。図2(e)は、完成した固体撮像素子である。 A second embodiment of the present invention will be described with reference to FIGS. FIG. 2 is a cross-sectional view showing the manufacturing process of the solid-state imaging device. FIG. 4 is a perspective view of a solid-state image sensor bare chip. 4 in FIG. 4 indicates a light receiving element area. 2 in FIG. 2A is a solid-state image sensor bare chip before processing. Reference numeral 7 in FIG. 2B denotes a solid-state image sensor bare chip after processing the opposite surface of the light receiving surface into a concave portion by etching or cutting to a thickness that can form a desired curved shape. However, the thickness of the light-receiving surface is set to a thickness that does not affect imaging even if it is affected by atmospheric pressure of about 1100 hpa to 500 hpa. The size of the concave portion of the solid-state image sensor bare chip 7 after processing shown in FIG. 2 (b) may be larger than that of the light receiving element area 1 in FIG. 2 of FIG.2 (e) is a base which mounts a solid-state image sensor. FIG. 2E shows a completed solid-state imaging device.
図2(c)において加工後の固体撮像素子ベアチップ7の受光面側から圧縮空気9を用い受光面を加圧し湾曲形状を形成する。または、図2(d)の湾曲形状をした治具10で加圧し、受光面に湾曲形状を形成する。このとき、圧縮空気圧9および湾曲形状をした治具10の加圧は、完成後に所望の湾曲形状が形成できる圧力とする。次に受光面への加圧を解除したときに所望の湾曲形状となるように、受光面の反対面に図2(e)の凹部空間11の機密性が保持できるように台座8を接着する。台座8の接着後は、受光面が湾曲形状となった図2(e)の固体撮像素子ができる。
In FIG. 2C, the light receiving surface is pressurized using
本発明の実施例3について、図4および図3を参照して説明する。図4は、固体撮像素子ベアチップ斜視図を示す。図3は、固体撮像素子の製造工程を示す断面図である。図4の1は、受光素子エリアを示す。図3(a)の12は加工前の固体撮像素子ベアチップである。図3(b)の13は、受光面の反対面を完成後に所望の湾曲形状が形成できる厚みにエッチングあるいは切削加工し、凹部とした加工後の固体撮像素子ベアチップである。図3(b)加工後の固体撮像素子ベアチップ13の凹部の大きさは、図4の受光素子エリア1より大きければ良い。図3(e)の17は、湾曲形状を維持するために硬化させた接着剤である。図3(e)は、完成した固体撮像素子である。
A third embodiment of the present invention will be described with reference to FIG. 4 and FIG. FIG. 4 is a perspective view of a solid-state image sensor bare chip. FIG. 3 is a cross-sectional view showing the manufacturing process of the solid-state imaging device. 4 in FIG. 4 indicates a light receiving element area. In FIG. 3A,
図3(c)において加工後の固体撮像素子ベアチップ13の受光面側から圧縮空気14を用い受光面を加圧し湾曲形状を形成する。または、図3(d)の湾曲形状をした治具15で加圧し、受光面に湾曲形状を形成する。このとき、圧縮空気圧14および湾曲形状をした治具15の加圧は、完成後に所望の湾曲形状が形成できる圧力とする。次に、受光面の反対面に凹部空間16内に接着剤17を注入し、接着剤17を硬化させる。接着剤17の硬化後は、受光面への大きな圧力変化があっても湾曲形状が保持できる図3(e)の固体撮像素子ができる。
In FIG. 3C, the light receiving surface is pressurized using
本発明の製造方法による固体撮像素子は、それぞれ特徴のある固体撮像素子ができる。ちなみに請求項1の製造方法によれば、大規模な製造装置を必要とせずに製造できるので安価な固体撮像素子ができる。請求項2の製造方法によれば、受光面を単純に加圧するだけなので短時間に製造でき、安価な固体撮像素子ができる。また、請求項3の製造方法によれば、湾曲形状を接着剤で保持しているので、機械的強度を増した固体撮像素子ができ、さらに台座を必要としないので固体撮像素子が薄くできる。 The solid-state imaging device according to the manufacturing method of the present invention can be a characteristic solid-state imaging device. By the way, according to the manufacturing method of claim 1, since it can be manufactured without requiring a large-scale manufacturing apparatus, an inexpensive solid-state imaging device can be obtained. According to the manufacturing method of claim 2, since the light receiving surface is simply pressurized, it can be manufactured in a short time, and an inexpensive solid-state imaging device can be obtained. Further, according to the manufacturing method of the third aspect, since the curved shape is held by the adhesive, a solid-state imaging device with increased mechanical strength can be obtained, and further, since no pedestal is required, the solid-state imaging device can be thinned.
1 受光素子エリア
2 加工前の固体撮像素子ベアチップ
3 加工後の固体撮像素子ベアチップ
4 台座
5 凹部空間
6 加工前の固体撮像素子ベアチップ
7 加工後の固体撮像素子ベアチップ
8 台座
9 圧縮空気
10 湾曲形状をした治具
11 凹部空間
12 加工前の固体撮像素子ベアチップ
13 加工後の固体撮像素子ベアチップ
14 圧縮空気
15 湾曲形状をした治具
16 凹部空間
17 接着剤
18 配線基板
19 半導体ベアチップ
20 湾曲面
21 固体撮像素子
DESCRIPTION OF SYMBOLS 1 Light receiving element area 2 Solid imaging element bare chip before processing 3 Solid imaging element bare chip after processing 4
Claims (4)
A solid-state imaging device manufactured by the manufacturing method according to claim 1, 2 or 3.
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Cited By (3)
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JP2007266380A (en) * | 2006-03-29 | 2007-10-11 | Matsushita Electric Ind Co Ltd | Semiconductor image pickup device and its manufacturing method |
CN102479794A (en) * | 2010-11-24 | 2012-05-30 | 索尼公司 | Solid-state imaging device and manufacturing method thereof, and electronic apparatus |
WO2019097909A1 (en) * | 2017-11-17 | 2019-05-23 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor element, semiconductor device and semiconductor element production method |
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Cited By (8)
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JP2007266380A (en) * | 2006-03-29 | 2007-10-11 | Matsushita Electric Ind Co Ltd | Semiconductor image pickup device and its manufacturing method |
CN102479794A (en) * | 2010-11-24 | 2012-05-30 | 索尼公司 | Solid-state imaging device and manufacturing method thereof, and electronic apparatus |
EP2458638A1 (en) | 2010-11-24 | 2012-05-30 | Sony Corporation | Solid-state imaging device and manufacturing method thereof, and electronic apparatus |
JP2012114189A (en) * | 2010-11-24 | 2012-06-14 | Sony Corp | Solid-state imaging device, manufacturing method thereof and electronic device using the device |
TWI508274B (en) * | 2010-11-24 | 2015-11-11 | Sony Corp | Solid-state imaging device and manufacturing method thereof, and electronic apparatus |
US9490285B2 (en) | 2010-11-24 | 2016-11-08 | Sony Corporation | Solid-state imaging device and manufacturing method thereof, and electronic apparatus |
KR101899596B1 (en) * | 2010-11-24 | 2018-09-17 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | Solid-state imaging device and manufacturing method thereof, and electronic apparatus |
WO2019097909A1 (en) * | 2017-11-17 | 2019-05-23 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor element, semiconductor device and semiconductor element production method |
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