JP2005260436A - Imaging module and imaging apparatus employing it - Google Patents

Imaging module and imaging apparatus employing it Download PDF

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JP2005260436A
JP2005260436A JP2004067165A JP2004067165A JP2005260436A JP 2005260436 A JP2005260436 A JP 2005260436A JP 2004067165 A JP2004067165 A JP 2004067165A JP 2004067165 A JP2004067165 A JP 2004067165A JP 2005260436 A JP2005260436 A JP 2005260436A
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imaging
curved
material film
base substrate
buffer material
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Toshiyuki Toyoshima
利之 豊島
Tsuneo Hamaguchi
恒夫 濱口
Munehisa Takeda
宗久 武田
Yoshinori Yokoyama
吉典 横山
Hiroo Sakamoto
博夫 坂本
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15158Shape the die mounting substrate being other than a cuboid

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Abstract

<P>PROBLEM TO BE SOLVED: To obtain an imaging module in which performance is enhanced while reducing the size and thickness. <P>SOLUTION: A concave curved part 41 is provided in a base substrate 4 and the curved part 41 is curved in correspondence with curvature of an image plane caused by aberration of the lens module in an imaging apparatus. The base substrate 4 is provided with a shock absorbing material film 2 which is curved along the shape at the curved part of the base substrate 4, and an imaging element 1 is provided on the shock absorbing material film 2 while bending its imaging plane according to the shape at the curved part. The shock absorbing material film 2 relaxes effect of difference in thermal expansion coefficient between the base substrate 4 and the imaging element 1 due to temperature rise on the imaging element 1. Upper and lower surfaces of the shock absorbing material film 2 also bend along the shape at the curved part, and both the imaging element 1 and the shock absorbing material film 2 are layered while keeping the curved shape similar to that at the curved part of the base substrate 4. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、湾曲した撮像素子を用いた撮像モジュールと、これを用いたデジタルカメラやカメラ付携帯電話に搭載される撮像装置に関するものである。   The present invention relates to an imaging module using a curved imaging device and an imaging device mounted on a digital camera or a camera-equipped mobile phone using the imaging module.

デジタルカメラ機器やカメラ付携帯電話などでは、撮像性能の向上と機器の軽薄・短小化が要求されている。そのために、撮像素子を湾曲できる膜厚まで薄膜化して、その湾曲形状を保持したまま基材上に接着剤などで固定した固体撮像装置があり、結像光学系の収差を修正するためのレンズが不要になり軽薄・短小化を実現している(例えば、特許文献1参照)。
また、半導体ベアチップが一方の面で配線基板にフリップチップ実装され、他方の面に結像光学系の撮像レンズの収差により生じる像面湾曲に応じた湾曲面が形成され、この半導体ベアチップの湾曲面にその湾曲形状に沿わせて撮像素子の裏面を貼り合わせた固体撮像装置がある(例えば、特許文献2参照)。
Digital camera devices and camera-equipped mobile phones are required to improve the imaging performance and make the devices lighter and thinner. For this purpose, there is a solid-state imaging device in which the imaging element is thinned to a film thickness that can be curved, and fixed on the base material with an adhesive or the like while maintaining the curved shape, and a lens for correcting aberrations in the imaging optical system Is not necessary, and lightness, thinness and miniaturization are realized (see, for example, Patent Document 1).
The semiconductor bare chip is flip-chip mounted on the wiring substrate on one side, and a curved surface corresponding to the curvature of field caused by the aberration of the imaging lens of the imaging optical system is formed on the other side. In addition, there is a solid-state imaging device in which the back surface of the imaging element is bonded along the curved shape (see, for example, Patent Document 2).

特開2001−1561278号公報(第1頁)JP 2001-156278 A (first page) 特開2003−188366号公報(第1頁)JP 2003-188366 A (first page)

しかしながら、上記のように撮像モジュールの小型化、薄膜化、高性能化のために撮像素子チップを湾曲させているが、撮像素子は湾曲可能な程度に薄膜化しているため温度の影響を受け易くなっている。
上記特許文献1では基材と撮像素子の熱膨張率が異なるため、温度上昇により熱膨張率の差に起因する応力が発生し、薄膜化された撮像素子が変形して焦点がぼやけるという課題があった。
また、上記特許文献2では、撮像素子と半導体ベアチップが共にシリコン基板であるため両者の熱膨張率の差による応力発生は防止できるが、撮像素子を固定している半導体ベアチップには結像光学系の撮像レンズの収差により生じる像面湾曲に応じた湾曲面が設けられている。半導体ベアチップ内には上記湾曲面を設けることによる膜厚差があり、そのため半導体ベアチップには、温度上昇に伴い上記膜厚差による反りが発生し、撮像素子が変形し、画像がぼやけるという課題があった。
However, as described above, the image pickup device chip is curved for the purpose of downsizing, thinning, and high performance of the image pickup module. However, the image pickup device is thin enough to be bent, so that it is easily affected by temperature. It has become.
In the above-mentioned Patent Document 1, since the thermal expansion coefficients of the base material and the imaging element are different, a stress due to the difference in the thermal expansion coefficient is generated due to the temperature rise, and the thinned imaging element is deformed and the focus is blurred. there were.
In Patent Document 2, since both the image pickup element and the semiconductor bare chip are silicon substrates, stress generation due to the difference in thermal expansion coefficient between them can be prevented. A curved surface corresponding to the curvature of field caused by the aberration of the imaging lens is provided. There is a difference in film thickness due to the provision of the curved surface in the semiconductor bare chip.Therefore, the semiconductor bare chip is warped due to the film thickness difference as the temperature rises, and the imaging element is deformed and the image is blurred. there were.

本発明は、かかる課題を解決するためになされたものであり、小型、薄膜化し、かつより高性能化した撮像モジュールおよび撮像装置を得ることを目的とする。   The present invention has been made to solve such a problem, and an object of the present invention is to obtain an imaging module and an imaging apparatus that are small, thin, and have higher performance.

本発明に係る第1の撮像モジュールは、凹面状に湾曲する湾曲部が設けられた台座基板と、この台座基板の上記湾曲部に設けられ、上記湾曲部の形状に沿って湾曲した緩衝材膜と、この緩衝材膜の湾曲面に設けられ、撮像面が上記湾曲部の形状に湾曲した撮像素子とを備えたものである。   The first imaging module according to the present invention includes a pedestal substrate provided with a curved portion that is curved in a concave shape, and a buffer material film that is provided on the curved portion of the pedestal substrate and is curved along the shape of the curved portion. And an imaging element provided on the curved surface of the buffer material film and having an imaging surface curved in the shape of the curved portion.

本発明の第1の撮像モジュールは、凹面状に湾曲する湾曲部が設けられた台座基板と、この台座基板の上記湾曲部に設けられ、上記湾曲部の形状に沿って湾曲した緩衝材膜と、この緩衝材膜の湾曲面に設けられ、撮像面が上記湾曲部の形状に湾曲した撮像素子とを備えたもので、湾曲撮像素子において発生する温度上昇に伴う応力発生などによる画像のぼやけを解消することができる。   The first imaging module of the present invention includes a pedestal substrate provided with a curved portion that curves in a concave shape, and a buffer material film that is provided on the curved portion of the pedestal substrate and is curved along the shape of the curved portion. The image pickup surface is provided on the curved surface of the buffer material film, and the image pickup surface is curved in the shape of the curved portion. Can be resolved.

実施の形態1.
図1は、本発明の実施の形態1の撮像モジュールの説明図で、台座基板4には凹面状に湾曲する湾曲部41が設けられているが、上記湾曲部41は、下記レンズモジュールの収差により生じる像面湾曲に対応して湾曲している。
台座基板4には緩衝材膜2が設けられているが、緩衝材膜2は台座基板4の湾曲部の形状に沿って湾曲しており、上記緩衝材膜2には撮像素子1が、その撮像面が上記湾曲部の形状に湾曲して設けられている。
上記緩衝材膜2は、温度上昇による台座基板4と撮像素子1の熱膨張率の差の、撮像素子1への影響を緩和するための膜であり、上記熱膨張率の差に起因する撮像素子1への応力の発生を防止するもので、緩衝材膜2もその上下面が上記湾曲形状に沿って湾曲し、撮像素子1および緩衝材膜2が共に、台座基板4の湾曲部と同様の湾曲形状を保持したまま積層されている。
Embodiment 1 FIG.
FIG. 1 is an explanatory diagram of the imaging module according to Embodiment 1 of the present invention. The pedestal substrate 4 is provided with a curved portion 41 that is curved in a concave shape, and the curved portion 41 has the following aberrations of the lens module. Is curved corresponding to the curvature of field caused by.
Although the buffer material film 2 is provided on the pedestal substrate 4, the buffer material film 2 is curved along the shape of the curved portion of the pedestal substrate 4, and the imaging element 1 is provided on the buffer material film 2. The imaging surface is provided to be bent in the shape of the bending portion.
The buffer material film 2 is a film for alleviating the influence on the image pickup device 1 due to the difference in thermal expansion coefficient between the base substrate 4 and the image pickup device 1 due to a temperature rise, and imaging due to the difference in the coefficient of thermal expansion. In order to prevent the stress from being generated on the element 1, the upper and lower surfaces of the buffer film 2 are also curved along the curved shape, and both the imaging element 1 and the buffer film 2 are the same as the curved portion of the base substrate 4. Are stacked while maintaining the curved shape.

撮像装置においては、結像レンズが組み込まれたレンズモジュールを用いて被写体を撮像素子の撮像面で結像させるが、結像レンズで被写体を結像させる場合、像面湾曲と呼ばれるレンズの集差が発生する。しかし、本実施の形態の撮像モジュールにおいては、上記のように、レンズの収差により生じる像面湾曲に対応して撮像素子1が湾曲しているために、収差補正用レンズが不要になり、レンズ枚数を削減できるのでレンズ筐体部分の高さを削減することができる。
なお、本実施の形態においては撮像素子1および緩衝材膜2を湾曲固定するために、撮像素子1および緩衝材膜2の膜厚は100μm以下が望ましく、50μm以下がさらに望ましい。
また、撮像素子のサイズは特に限定されるものではないが、緩衝材膜2のサイズよりも小さいことが積層する場合の位置合わせが容易になるため望ましい。
また、チップの縦横の寸法比は、特に限定されないが、湾曲時の変形を均一化するために1.2倍以内が望ましく、湾曲させた場合に発生する応力の均一性の点からは、同じであることがさらに望ましい。
In an imaging device, an object is imaged on an imaging surface of an imaging device using a lens module incorporating an imaging lens. When an object is imaged with an imaging lens, a lens concentration called field curvature is used. Occurs. However, in the imaging module of the present embodiment, as described above, since the imaging element 1 is curved in response to the curvature of field caused by the aberration of the lens, an aberration correction lens becomes unnecessary, and the lens Since the number of sheets can be reduced, the height of the lens housing portion can be reduced.
In the present embodiment, in order to bend and fix the image pickup device 1 and the buffer material film 2, the film thickness of the image pickup device 1 and the buffer material film 2 is desirably 100 μm or less, and more desirably 50 μm or less.
In addition, the size of the image pickup device is not particularly limited, but it is desirable that the size is smaller than the size of the buffer material film 2 because alignment in the case of stacking becomes easy.
Further, the vertical / horizontal dimension ratio of the chip is not particularly limited, but is preferably within 1.2 times in order to make the deformation at the time of bending uniform. From the point of uniformity of stress generated when the chip is bent, it is the same. It is further desirable that

また、本実施の形態の撮像モジュールにおいては、撮像素子1を直接台座基板4に固定するのではなく、緩衝部材膜2を介して積層することにより、台座基板4との熱膨張率差などにより発生する応力の影響が受けにくくなるため、温度上昇により撮像素子1が変形し、画像がぼやけることが防止され信頼性が向上する。
本実施の形態に係わる撮像素子1は、人工網膜チップやCCD(Charge Coupled Device)、CMOS(Complementary Metal−Oxide Semiconductor)型撮像素子など特に限定されるものではないが、この場合、上記緩衝部材膜2として撮像素子1と同じSi基板を用いると熱膨張率が撮像素子1と同じになるため、台座基板4との熱膨張率差などで撮像素子に応力が発生するのを防止できるため好ましい。なお、緩衝材膜2と撮像素子1の熱膨張率の差が上記撮像素子1の熱膨張率の±50%以下であっても同等の効果を得ることができる。
また、緩衝材膜2の上下面を同様に上記湾曲形状に沿って湾曲しているので、緩衝材膜2の膜厚内のバラツキが小さく、温度上昇に伴う反りが発生するのを防止でき、撮像素子の変形が防止できるという効果がある。なお、膜厚内のバラツキは実質的に0に近付けることが好ましいが、膜厚のバラツキが±15%以下であっても緩衝材膜2としての効果を得ることができる。
In the imaging module of the present embodiment, the imaging element 1 is not directly fixed to the pedestal substrate 4, but is laminated via the buffer member film 2, thereby causing a difference in thermal expansion coefficient from the pedestal substrate 4. Since it becomes difficult to be affected by the generated stress, the image pickup device 1 is prevented from being deformed due to a temperature rise, and the image is prevented from being blurred, thereby improving the reliability.
The imaging device 1 according to the present embodiment is not particularly limited to an artificial retina chip, a CCD (Charge Coupled Device), a CMOS (Complementary Metal-Oxide Semiconductor) type imaging device, or the like, but in this case, the buffer member film When the same Si substrate as that of the image sensor 1 is used as 2, the thermal expansion coefficient is the same as that of the image sensor 1. The same effect can be obtained even if the difference in thermal expansion coefficient between the buffer material film 2 and the image sensor 1 is ± 50% or less of the thermal expansion coefficient of the image sensor 1.
Further, since the upper and lower surfaces of the buffer material film 2 are similarly curved along the curved shape, the variation in the film thickness of the buffer material film 2 is small, and it is possible to prevent the warp accompanying the temperature rise, There is an effect that deformation of the image sensor can be prevented. Note that the variation in the film thickness is preferably substantially close to 0, but the effect as the buffer material film 2 can be obtained even if the variation in the film thickness is ± 15% or less.

なお、上記台座基板4としては、一般的にはガラスエポキシ基板等の多層配線板を用いるが、アラミド繊維エポキシ基板または熱可塑樹脂を用いた配線板等を用いることも可能である。また、多層配線板でなくても、湾曲させた撮像素子を固定できる剛性が保持されていれば、材料は限定されるものではない。   The pedestal substrate 4 is generally a multilayer wiring board such as a glass epoxy board, but an aramid fiber epoxy board or a wiring board using a thermoplastic resin can also be used. Even if the wiring board is not a multilayer wiring board, the material is not limited as long as the rigidity capable of fixing the curved imaging element is maintained.

実施の形態2.
図2は、本発明の実施の形態2の撮像モジュールの製造方法を説明する工程図で、緩衝材膜2として信号処理をおこなうDSP(Digital Signal Processor)などのASIC(Application Specific Integrated Circuit)等、能動素子を用いた場合について説明する。
また、緩衝材膜2として能動素子に限定して説明しているが、能動素子でなくともトランジスタ回路を持たないSi基板、貫通配線など導体回路を形成してあるSi基板であっても良く、上記実施の形態1に記載した条件を有するものであれば特に限定されるものではない。
また、能動素子は信号処理用にとどまらず、薄膜化できる素子であれば特に限定されず、緩衝材膜の積層数は、特に限定されるものではない。
Embodiment 2. FIG.
FIG. 2 is a process diagram for explaining a method of manufacturing the imaging module according to the second embodiment of the present invention. An ASIC (Application Specific Integrated Circuit) such as a DSP (Digital Signal Processor) that performs signal processing as the buffer material film 2, etc. A case where an active element is used will be described.
Further, although the buffer material film 2 is described as being limited to active elements, it may be a Si substrate not having an active element but a transistor circuit, or a Si substrate having a conductor circuit such as a through wiring, There is no particular limitation as long as the conditions described in the first embodiment are satisfied.
The active element is not limited to signal processing and is not particularly limited as long as it is an element that can be thinned, and the number of stacked buffer material films is not particularly limited.

まず、湾曲部41が設けられた台座基板4上に接着剤3を塗布し、緩衝材膜となる上記Si基板からなる能動素子2を所定の位置に位置あわせをする{図2(a)}。
さらに、台座基板4表面と能動素子(緩衝材膜)2を覆うようにカバー5をするが、カバー5をかぶせる前に、台座基板4と能動素子2とを覆うようにフィルム26をかぶせる{図2(b)}。なお、カバー5は、後の工程で加圧する空気が漏れないように、台座基板4とフィルム26、およびカバー5とフィルム26の接触部に隙間ができないように充分密着して加圧するためのものである。
次に、カバー5に設けられた孔51より能動素子2が湾曲するのに充分な空気の圧力6で、フィルム26を変形させ湾曲させることにより、間接的に能動素子2を加圧し台座基板4の湾曲部に沿う形に変形させるとともに、接着剤3を密着させ、加熱処理や紫外線照射などにより接着層を硬化することで、能動素子2を台座基板4上に固定する{図2(c)}。
上記工程において、フィルム26を用いて間接的に能動素子2を変形させているが、これは加圧の均一化を図るためであり、特に必要がなければフィルムを用いないで、直接能動素子を空気の圧力で加圧して湾曲させても良い。また、空気ではなく、窒素などの不活性なガスを用いることも可能であり、特に限定されるものではない。
First, the adhesive 3 is applied on the base substrate 4 provided with the curved portion 41, and the active element 2 made of the Si substrate serving as a buffer material film is aligned at a predetermined position {FIG. 2 (a)}. .
Further, the cover 5 is covered so as to cover the surface of the base substrate 4 and the active element (buffer material film) 2, but before the cover 5 is covered, the film 26 is covered so as to cover the base substrate 4 and the active element 2 {FIG. 2 (b)}. In addition, the cover 5 is used for pressurizing the base substrate 4 and the film 26, and the contact portion between the cover 5 and the film 26 so that there is no gap between the base substrate 4 and the film 26 so that air to be pressurized in a subsequent process does not leak. It is.
Next, the active element 2 is indirectly pressurized by deforming and bending the film 26 with a pressure 6 of air sufficient to bend the active element 2 from the hole 51 provided in the cover 5, thereby causing the base substrate 4 to be curved. The active element 2 is fixed on the pedestal substrate 4 by causing the adhesive 3 to adhere and curing the adhesive layer by heat treatment or ultraviolet irradiation {FIG. 2 (c) }.
In the above process, the active element 2 is indirectly deformed by using the film 26. This is for the purpose of uniforming the pressure. If not particularly necessary, the active element 2 is directly connected without using the film. You may pressurize with the pressure of air and make it curve. In addition, an inert gas such as nitrogen can be used instead of air, and there is no particular limitation.

次に、カバー5を取り除き{図2(d)}、湾曲固定した能動素子2上に接着剤3を塗布し、さらに能動素子2上の所定の位置に薄膜化した撮像素子1を接着剤中に気泡を含まないように積層し、上記と同様にフィルム26をかぶせた後、台座基板4と撮像素子1の積層物を覆うようにカバー5をする{図2(f)}。
次に、カバー5に設けられた孔51より空気6を送り込んで、撮像素子を加圧し台座基板の湾曲部に沿う形に変形させるとともに、接着剤層を密着させ、加熱処理など接着剤の硬化処理をおこない、撮像素子1を能動素子2上に固定して{図2(g)}撮像モジュール11を得る{図2(h)}。
Next, the cover 5 is removed {FIG. 2 (d)}, the adhesive 3 is applied on the active element 2 fixed to bend, and the imaging element 1 that is thinned at a predetermined position on the active element 2 is contained in the adhesive. Are laminated so as not to contain bubbles, and after covering with the film 26 in the same manner as described above, the cover 5 is covered so as to cover the laminate of the base substrate 4 and the image pickup device 1 {FIG. 2 (f)}.
Next, air 6 is sent from the hole 51 provided in the cover 5 to pressurize the image pickup device and deform it into a shape along the curved portion of the base substrate, and to adhere the adhesive layer and cure the adhesive such as heat treatment. Processing is performed to fix the imaging device 1 on the active device 2 {FIG. 2 (g)} to obtain the imaging module 11 {FIG. 2 (h)}.

接着剤としては、加熱により硬化する熱硬化性接着剤、紫外線などのエネルギー線の照射により硬化する紫外線硬化型接着剤、室温硬化の接着剤または嫌気性の接着剤など特に限定されるものではなく、撮像素子および緩衝材膜の湾曲形状を保持できる接着剤であれば特に限定はされず、接着剤の形状は液状でも良くシートまたはフィルムでも良い。
また、撮像素子1を緩衝材膜である能動素子2に接着剤を塗布する場合、本実施の形態では能動素子2に塗布するが、撮像素子の裏面におこなっても良く、接着面積も特に限定されるものではなく、液状の場合には、固着された後に余分な樹脂が撮像素子表面を汚染しない範囲で塗布すれば良く、シート状、フィルム状接着剤であれば、チップサイズよりも大きな面積で形成しても良い。
The adhesive is not particularly limited, such as a thermosetting adhesive that cures by heating, an ultraviolet curable adhesive that cures by irradiation of energy rays such as ultraviolet rays, an adhesive that cures at room temperature, or an anaerobic adhesive. The adhesive is not particularly limited as long as it is an adhesive that can maintain the curved shape of the imaging element and the buffer material film, and the shape of the adhesive may be liquid or a sheet or film.
Further, in the case where the imaging element 1 is applied to the active element 2 that is a buffer material film, the adhesive is applied to the active element 2 in the present embodiment, but may be applied to the back surface of the imaging element, and the bonding area is also particularly limited. If it is liquid, it may be applied as long as the excess resin does not contaminate the surface of the image sensor after being fixed. If it is a sheet or film adhesive, the area larger than the chip size. May be formed.

なお、接着剤としては、例えば紫外線硬化型接着剤{商品名:TB3000,Three−bond(株)製}、{商品名:3100,Three−bond(株)製}、{商品名:DESOLITE,JSR(株)製}などが好適に用いることができるが、紫外線硬化樹脂を用いる場合には、台座基板4には紫外線が透過する基材、例えばアクリル樹脂などで成型されたものを用いることが必要である。また、紫外線の透過性は低いが、FR4ガラスエポキシ基材{商品名:GEPL170,三菱瓦斯化学(株)製}を用いても良い。
また、不透明基材としてアルミなどの金属やセラミックなどを用いた場合には、紫外線照射を必要としない加熱硬化型接着剤を用いれば良い。
なお、接着剤層の膜厚制御が難しい場合には、スペーサを用いることも有効でスペーサとしては、材質は特に限定されず、樹脂、金属、セラミックまたはこれらの複合体の粒子を用いることができる。
As the adhesive, for example, an ultraviolet curable adhesive {trade name: TB3000, manufactured by Three-bond Co., Ltd.}, {trade name: 3100, manufactured by Three-bond Co., Ltd.}, {trade name: DESOLITE, JSR Manufactured by Co., Ltd.} can be preferably used. However, when an ultraviolet curable resin is used, it is necessary to use a base material that is transparent to ultraviolet rays, such as an acrylic resin, for the base substrate 4. It is. Further, although the ultraviolet ray permeability is low, an FR4 glass epoxy base material {trade name: GEPL170, manufactured by Mitsubishi Gas Chemical Co., Ltd.} may be used.
In addition, when a metal such as aluminum or ceramic is used as the opaque base material, a heat-curable adhesive that does not require ultraviolet irradiation may be used.
When it is difficult to control the thickness of the adhesive layer, it is also effective to use a spacer. The material of the spacer is not particularly limited, and particles of resin, metal, ceramic, or a composite thereof can be used. .

実施の形態3.
図3は、本発明の実施の形態3の撮像装置の説明図で、上記実施の形態により得られた撮像モジュールとレンズモジュール9とを組み合わせて得られたもので、能動素子を緩衝材膜2としているので、能動素子の実装面積を省略することができるため、撮像装置の薄型化と小型化も同時に実現することができる。
なお、レンズモジュール9のレンズ91部分は、3枚構成のレンズを用い、全てを重ね合わせてネジ切りしたリング状のプラスチック製支持部材に接着剤を用いて固定する、さらにレンズ筐体部92は、プラスチック製の円筒状の筐体とし、内部にねじ切りをして上述のレンズをはめ込む。レンズの枚数は特に制限を受けるものではなく、湾曲形状やその湾曲曲率、さらには用いる撮像素子の種類や画素数に応じて設計したものを用いれば良く、特に限定されるものではない。必要な画像に応じて2枚でも4枚でも良く、さらに5枚以上でも良い。さらには、これらの素材は特に限定されるものではなく有機物、無機物でも良い。さらに、このようにして作製したレンズモジュール9を画像を確認しながら、その位置を調整して画像が最も良くなる位置に固定し、接着剤などで固定する。
撮像素子の画素数はデジタルカメラでは500万画素、カメラ付携帯電話では200万画素であり、画素数の増大とともに信号処理も高速化・大容量化するため、能導体素子、コンデンサなどの受動素子の数量、面積ともに増加の一途にあり、上記素子類を緩衝材膜2として、本実施の形態におけるように積層することにより撮像装置の薄型化と小型化を実現できる。
Embodiment 3 FIG.
FIG. 3 is an explanatory diagram of the image pickup apparatus according to the third embodiment of the present invention, which is obtained by combining the image pickup module obtained by the above embodiment and the lens module 9. Therefore, since the mounting area of the active element can be omitted, the image pickup apparatus can be thinned and miniaturized at the same time.
The lens 91 portion of the lens module 9 uses a three-element lens, and is fixed to a ring-shaped plastic support member that is superposed and threaded using an adhesive. A plastic cylindrical housing is formed, and the above-described lens is fitted by threading the inside. The number of lenses is not particularly limited, and a lens designed according to a curved shape, a curved curvature thereof, a type of an imaging element to be used, and the number of pixels is not particularly limited. Depending on the required image, it may be two or four, and may be five or more. Furthermore, these materials are not particularly limited, and may be organic or inorganic. Further, while confirming the image, the lens module 9 manufactured in this way is adjusted and fixed at a position where the image is the best, and fixed with an adhesive or the like.
The number of pixels of the image sensor is 5 million pixels for digital cameras and 2 million pixels for mobile phones with cameras. Passive elements such as active conductor elements and capacitors are used to increase the number of pixels and increase signal processing speed and capacity. Both the quantity and area of the imaging device are increasing, and by stacking the above elements as the buffer material film 2 as in the present embodiment, the imaging device can be made thinner and smaller.

実施例1.
撮像素子としてCCD(Charge Coupled Device)、緩衝部材膜となる能動素子としてDSPのASICを用いて、実施の形態2の製造方法により撮像モジュールを製造する。なお、撮像素子と能動素子の膜厚はそれぞれ40μmで面内膜厚バラツキは±15%以内であり、撮像素子の平面寸法は5.6mm×6mm、能動素子の寸法は9mm×9mmである。
湾曲部を設けた台座基板としては、厚み0.6mmの6層のFR4多層配線板を用い、湾曲部は、直径15mm、湾曲部の曲率は半径20mm、中心部の深さは0.3mmである。
また、コンデンサ、抵抗体などの受動部品などは既に実装されているものを用い、能動素子裏面と台座基板とを接合するための接着剤には、カチオン系紫外線硬化接着剤{商品名:TB3100,Three−bond(株)製}を用い、能動素子を固定する工程では、カバーで密封した後、98N/cm(10kg/cm)の加圧空気で能動素子を加圧して能動素子を湾曲させる。
さらに、この状態で固定したまま、紫外線照射装置{商品名:スポットキュアUIS−50101AA,USHIO(株)製}を用いて、台座基板側から180秒間紫外線を照射し、接着剤を硬化させる。この後、カバーを取り除くが、接着剤層の厚みは1μmであった。
さらに能動素子上に撮像素子を接着するには、接着剤として熱硬化型の接着剤{商品名:TB2202F,Three−bond(株)製}を用い、マイクロディスペンサを用いて、能動素子上に塗布しておく。そして、撮像素子を能動素子上の所定の箇所に位置合わせした後、98N/cm(10kg/cm)の加圧空気で撮像素子を加圧し湾曲させる。さらに撮像素子を湾曲し固定したまま、オーブン中で90℃30分間加熱して接着剤を硬化し、撮像素子を能動素子上に湾曲形状を保ったまま固定して得られた撮像モジュールでは、撮像素子と能動素子間の接着材層の厚みは2μmである。
Example 1.
An imaging module is manufactured by the manufacturing method of the second embodiment, using a CCD (Charge Coupled Device) as an imaging element and an ASIC of a DSP as an active element serving as a buffer member film. The film thickness of the imaging element and the active element is 40 μm, the in-plane film thickness variation is within ± 15%, the planar dimension of the imaging element is 5.6 mm × 6 mm, and the dimension of the active element is 9 mm × 9 mm.
As a base substrate provided with a curved portion, a 6-layer FR4 multilayer wiring board having a thickness of 0.6 mm is used. The curved portion has a diameter of 15 mm, the curvature of the curved portion has a radius of 20 mm, and the central portion has a depth of 0.3 mm. is there.
In addition, passive components such as capacitors and resistors are already mounted, and a cationic ultraviolet curing adhesive {trade name: TB3100, as an adhesive for joining the back surface of the active element and the base substrate. In the process of fixing the active element using the Three-bond Co., Ltd.}, after sealing with a cover, the active element is curved by pressurizing the active element with 98 N / cm 2 (10 kg / cm 2 ) of pressurized air. Let
Further, the adhesive is cured by irradiating with ultraviolet rays from the base substrate side for 180 seconds using an ultraviolet irradiation device {trade name: Spot Cure UIS-50101AA, manufactured by USHIO Co., Ltd.} while being fixed in this state. Thereafter, the cover was removed, but the thickness of the adhesive layer was 1 μm.
Further, in order to bond the image pickup element on the active element, a thermosetting adhesive {trade name: TB2202F, manufactured by Three-bond Co., Ltd.} is used as an adhesive, and is applied onto the active element using a micro dispenser. Keep it. Then, after aligning the image sensor at a predetermined point on the active element, thereby pressurizing curved imaging device with pressurized air 98N / cm 2 (10kg / cm 2). Furthermore, with the imaging module obtained by fixing the imaging element while maintaining the curved shape on the active element by heating the adhesive in the oven at 90 ° C. for 30 minutes while curing the imaging element and curing the adhesive, The thickness of the adhesive layer between the element and the active element is 2 μm.

実施例2.
実施例1において、撮像素子として200万画素のCCDを用いて得られた撮像モジュールを用い、これに実施の形態3に示すようにしてレンズモジュール9を組み合わせて図3に示す撮像装置得る。
Example 2
In Example 1, an imaging module obtained by using a CCD with 2 million pixels as an imaging element is used, and a lens module 9 is combined with the imaging module as shown in Embodiment 3 to obtain the imaging apparatus shown in FIG.

比較例1.
実施例1において、実施例1と同様に台座基板4には湾曲部41を設けてCCD(撮像素子)1は湾曲させるが、信号処理用LSI(能動素子)22は台座基板であるプリント配線板の裏面に実装するように、実施例1と同様にして製造した撮像モジュールを用い、実施例2と同様にして図4に示す撮像装置を得る。
Comparative Example 1
In the first embodiment, similarly to the first embodiment, the pedestal substrate 4 is provided with a bending portion 41 to bend the CCD (imaging device) 1, but the signal processing LSI (active device) 22 is a printed wiring board which is a pedestal substrate. The imaging device shown in FIG. 4 is obtained in the same manner as in the second embodiment using the imaging module manufactured in the same manner as in the first embodiment so as to be mounted on the back surface of the first embodiment.

比較例2.
実施例1において、台座基板4には湾曲部を設けず、またCCD(撮像素子)1は湾曲させず、信号処理用LSI(能動素子)22は台座基板であるプリント配線板の裏面に実装するように、実施例1と同様にして製造した撮像モジュールを用い、実施例2と同様にして図5に示す撮像装置を得る。
Comparative Example 2
In the first embodiment, the pedestal substrate 4 is not provided with a bending portion, the CCD (imaging device) 1 is not curved, and the signal processing LSI (active device) 22 is mounted on the back surface of the printed wiring board which is the pedestal substrate. Thus, using the imaging module manufactured in the same manner as in the first embodiment, the imaging device shown in FIG. 5 is obtained in the same manner as in the second embodiment.

表1に、実施例2、比較例1および比較例2の撮像装置の厚さを示すが、表1に示すように、比較例と比べて実施例2の撮像装置が薄膜化され、最大で30%以上薄膜化することができたことが示される。   Table 1 shows the thicknesses of the imaging devices of Example 2, Comparative Example 1 and Comparative Example 2. As shown in Table 1, the imaging device of Example 2 is made thinner than the comparative example, and the maximum thickness is as follows. It is shown that the film thickness can be reduced by 30% or more.

Figure 2005260436
Figure 2005260436

実施例2、比較例1または比較例2の撮像装置を用いて、表2に示す各スパティアル フリケンシィ(Spatial Frequency:lp/mm)の白黒パターンを撮像し、モジュレーション(Moduration:画像信号の歪みを総合的に示す値で、設計したパターンどおりに出力されていれば100%となる。)を測定して測定結果を表2に示す。   Using the imaging device of Example 2, Comparative Example 1 or Comparative Example 2, a black and white pattern of each Spatial Frequency (Ip / mm) shown in Table 2 was imaged, and modulation (modulation: total distortion of the image signal) If it is output according to the designed pattern, it is 100%.) Is measured and the measurement results are shown in Table 2.

Figure 2005260436
Figure 2005260436

図4、図5に示すように、比較例1および比較例2では撮像素子1の映像信号がワイアボンドを通じて配線基板(台座基板)上に伝送された後、DSP(能動素子)22に伝送される。
一方、実施例2の撮像装置では信号処理のDSP(能動素子)2を撮像素子1の直下に設けているので、撮像素子とDSPの電気的な接合がワイアボンドで行われるため、信号が配線基板上を流れることなく信号処理されるため、信号伝送距離の短縮による伝送損失の低減と外部ノイズの影響を低減させることができ、その結果、表2に示されるようにモジュレーション(Moduration)が上昇したのである。
As shown in FIGS. 4 and 5, in Comparative Example 1 and Comparative Example 2, the video signal of the image sensor 1 is transmitted to a wiring board (base board) through a wire bond and then transmitted to a DSP (active element) 22. .
On the other hand, since the signal processing DSP (active element) 2 is provided immediately below the image sensor 1 in the image pickup apparatus according to the second embodiment, the image sensor and the DSP are electrically bonded by wire bonding, so that the signal is transmitted to the wiring board. Since signal processing is performed without flowing over, transmission loss can be reduced by reducing the signal transmission distance and the influence of external noise can be reduced. As a result, the modulation has increased as shown in Table 2. It is.

比較例3.
実施例1において、台座基板には湾曲部を設けず、緩衝材膜2の代わりに、Si基板42の中心に球面状の湾曲面を加工したものを用いる。なお、このSi基板42の最薄部の厚さは200μmで、最厚部の膜厚との違いは50%であった。
また、上記Si基板42の湾曲部に薄膜化したCCDを湾曲固定する接着剤として、実施例1で用いた紫外線硬化接着剤の代わりに熱硬化性接着剤を用い、CCDを湾曲固定したまま所定の温度で硬化して接着固定し、信号処理用LSI(能動素子)22を台座基板4の裏面に実装するように、実施例1と同様にして製造した撮像モジュールを用い、実施例2と同様にして図6に示す撮像装置を得る。
Comparative Example 3
In the first embodiment, the base substrate is not provided with a curved portion, and instead of the buffer material film 2, a substrate obtained by processing a spherical curved surface at the center of the Si substrate 42 is used. The thickness of the thinnest part of the Si substrate 42 was 200 μm, and the difference from the film thickness of the thickest part was 50%.
Further, as an adhesive for bending and fixing the thinned CCD on the curved portion of the Si substrate 42, a thermosetting adhesive is used in place of the ultraviolet curing adhesive used in Example 1, and the CCD is curved and fixed. Using the imaging module manufactured in the same manner as in Example 1 so that the signal processing LSI (active element) 22 is mounted on the back surface of the pedestal substrate 4 and cured at the temperature of Thus, the imaging device shown in FIG. 6 is obtained.

撮像装置の解像度の温度依存性を評価するために、実施例2、比較例1または比較例3の撮像装置を用いて、スパティアル フリケンシィ(Spatial Frequency:lp/mm)が60の白黒パターンを撮像しながら、撮像装置を−25℃から80℃まで昇温して、モジュレーション(Moduration)を測定し、測定結果を表3に示す。   In order to evaluate the temperature dependence of the resolution of the imaging device, a black and white pattern with a spatial frequency (lp / mm) of 60 was captured using the imaging device of Example 2, Comparative Example 1 or Comparative Example 3. However, the temperature of the imaging device was raised from −25 ° C. to 80 ° C. to measure modulation, and the measurement results are shown in Table 3.

Figure 2005260436
Figure 2005260436

表3に示すように、実施例2の撮像モジュールでは能動素子である信号処理のDSPチップを撮像素子の直下に設けているので、比較例1、3と比較して、信号伝送距離の短縮による伝送損失の低減と外部ノイズの影響を低減させることができその結果モジュレーション(Moduration)が上昇しているのが示される。
さらに、実施例2では能動素子の材質が撮像素子と同質であり、かつ膜厚が均一であるため、撮像素子への台座基板との熱膨張率差に起因する応力の発生を緩和することができ、モジュレーション(Moduration)の温度依存性が改善されたことが示される。
As shown in Table 3, in the imaging module of the second embodiment, the signal processing DSP chip, which is an active element, is provided immediately below the imaging element. Therefore, compared to the first and third comparative examples, the signal transmission distance is shortened. It is shown that the transmission loss can be reduced and the influence of external noise can be reduced, resulting in an increase in modulation.
Furthermore, in Example 2, the material of the active element is the same as that of the imaging element and the film thickness is uniform, so that the generation of stress due to the difference in thermal expansion coefficient between the imaging element and the base substrate can be reduced. It is shown that the temperature dependence of the modulation is improved.

本発明の実施の形態1の撮像モジュールの説明図である。It is explanatory drawing of the imaging module of Embodiment 1 of this invention. 本発明の実施の形態2の撮像モジュールの製造方法を説明する工程図である。It is process drawing explaining the manufacturing method of the imaging module of Embodiment 2 of this invention. 本発明の実施の形態3の撮像装置の説明図である。It is explanatory drawing of the imaging device of Embodiment 3 of this invention. 本発明の比較例の撮像装置の説明図である。It is explanatory drawing of the imaging device of the comparative example of this invention. 本発明の比較例の撮像装置の説明図である。It is explanatory drawing of the imaging device of the comparative example of this invention. 本発明の比較例の撮像装置の説明図である。It is explanatory drawing of the imaging device of the comparative example of this invention.

符号の説明Explanation of symbols

1 撮像素子、2 緩衝材膜(能動素子)、4 台座基板、41 湾曲部、11 撮像モジュール、9 レンズモジュール。


DESCRIPTION OF SYMBOLS 1 Image pick-up element, 2 Buffer material film (active element), 4 base board, 41 Bending part, 11 Image pick-up module, 9 Lens module.


Claims (5)

凹面状に湾曲する湾曲部が設けられた台座基板と、この台座基板の上記湾曲部に設けられ、上記湾曲部の形状に沿って湾曲した緩衝材膜と、この緩衝材膜の湾曲面に設けられ、撮像面が上記湾曲部の形状に湾曲した撮像素子とを備えた撮像モジュール。 A pedestal substrate provided with a concavely curved curved portion, a buffer material film provided on the curved portion of the pedestal substrate, curved along the shape of the curved portion, and provided on a curved surface of the buffer material film And an imaging device having an imaging surface curved into the shape of the bending portion. 緩衝材膜と撮像素子の熱膨張率の違いが、上記撮像素子の熱膨張率の±50%以下であることを特徴とする請求項1に記載の撮像モジュール。 The imaging module according to claim 1, wherein a difference in thermal expansion coefficient between the buffer material film and the imaging element is ± 50% or less of the thermal expansion coefficient of the imaging element. 緩衝材膜の厚さのバラツキが±15%以内であることを特徴とする請求項1に記載の撮像モジュール。 The imaging module according to claim 1, wherein the thickness variation of the buffer material film is within ± 15%. 緩衝材膜が能動素子であることを特徴とする請求項1に記載の撮像モジュール。 The imaging module according to claim 1, wherein the buffer material film is an active element. 請求項1ないし請求項4のいずれかに記載の撮像モジュールと、この撮像モジュールの光入射側に配置されたレンズモジュールとを備えた撮像装置。


An imaging apparatus comprising: the imaging module according to claim 1; and a lens module disposed on a light incident side of the imaging module.


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