JP2005240160A5 - - Google Patents
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- JP2005240160A5 JP2005240160A5 JP2004055021A JP2004055021A JP2005240160A5 JP 2005240160 A5 JP2005240160 A5 JP 2005240160A5 JP 2004055021 A JP2004055021 A JP 2004055021A JP 2004055021 A JP2004055021 A JP 2004055021A JP 2005240160 A5 JP2005240160 A5 JP 2005240160A5
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- JP
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- Prior art keywords
- powder
- hip
- pressurized container
- sintered
- pressure
- Prior art date
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Description
HIP法は、焼結素材を加圧容器に充填して、プレス圧力を付加する必要があるため、焼結素材である原料粉末を加圧容器に、高充填率で均一な充填を行う必要がある。そこで、プレス圧力を充填した原料粉末に与える方法が提案されている(例えば、特許文献1および2参照)
本発明の実施例について以下に説明する。
平均粒径12μmのMo粉末、W粉末、平均粒径100μmのNb粉末、Ti粉末、Zr粉末を準備した。表1の試料No.1〜6に示すターゲット材を製造するために、Mo粉末および各添加元素の遷移金属粉末を所定の原子%比率で秤量後、V型混合機で10分間混合して得られた原料粉末を冷間静水圧プレス(CIP)で圧縮成形した圧密体を作製した。なお、CIPの圧力条件は265MPaとした。前記圧密体をジョークラッシャーおよびディスクミルを使用して粉砕し二次粉末を作製した。その二次粉末を再度V型混合機で10分間混合した後、内径寸法で厚さ100mm×幅1000mm×高さ1300mmの軟鋼製加圧容器に充填した。充填後、加圧容器の上蓋を溶接した後に450℃の温度下で真空脱気し、熱間静水圧プレス(HIP)で加圧焼結した。HIPは、1250℃、150MPaの条件下で5時間保持した。HIP後の焼結体を切断および機械加工して、厚さ6mm×幅810mm×長さ950mmのターゲット材を6枚得た。なお、二次粉末の加圧容器への充填密度を測定し表1に示した。また、上記の圧密体、焼結体から試験片を採取し、アルキメデス法により、相対密度を測定し表1に示す。
Examples of the present invention will be described below.
Mo powder, W powder having an average particle diameter of 12 μm, Nb powder having an average particle diameter of 100 μm, Ti powder , and Zr powder were prepared. Sample No. in Table 1 In order to produce the target materials shown in 1 to 6, Mo powder and transition metal powders of each additive element were weighed at a predetermined atomic% ratio, and then the raw material powder obtained by mixing for 10 minutes with a V-type mixer was cooled. A compacted body compression-molded with an isostatic press (CIP) was produced. The CIP pressure condition was 265 MPa. The compacted body was pulverized using a jaw crusher and a disk mill to produce a secondary powder. The secondary powder was again mixed with a V-type mixer for 10 minutes, and then filled into a pressure vessel made of mild steel having an inner diameter of 100 mm thick × 1000 mm wide × 1300 mm high. After filling, the upper lid of the pressurized container was welded, vacuum degassed at a temperature of 450 ° C., and pressure sintered by hot isostatic pressing (HIP). HIP was held for 5 hours under the conditions of 1250 ° C. and 150 MPa. The sintered body after HIP was cut and machined to obtain six target materials having a thickness of 6 mm × width of 810 mm × length of 950 mm. The packing density of the secondary powder into the pressurized container was measured and shown in Table 1. Further, test pieces were collected from the above compacted body and sintered body, and the relative density was measured by Archimedes method and shown in Table 1.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004055021A JP4110533B2 (en) | 2004-02-27 | 2004-02-27 | Manufacturing method of Mo-based target material |
CNB2005100095854A CN1314504C (en) | 2004-02-27 | 2005-02-24 | Process of mfg. Mo alloyed targeting materials |
US11/066,228 US20050191202A1 (en) | 2004-02-27 | 2005-02-25 | Method of producing target material of Mo alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004055021A JP4110533B2 (en) | 2004-02-27 | 2004-02-27 | Manufacturing method of Mo-based target material |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008023911A Division JP4706980B2 (en) | 2008-02-04 | 2008-02-04 | Manufacturing method of Mo target material |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005240160A JP2005240160A (en) | 2005-09-08 |
JP2005240160A5 true JP2005240160A5 (en) | 2006-08-24 |
JP4110533B2 JP4110533B2 (en) | 2008-07-02 |
Family
ID=34879772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004055021A Expired - Lifetime JP4110533B2 (en) | 2004-02-27 | 2004-02-27 | Manufacturing method of Mo-based target material |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050191202A1 (en) |
JP (1) | JP4110533B2 (en) |
CN (1) | CN1314504C (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101111627B (en) | 2005-02-01 | 2012-05-09 | 东曹株式会社 | Sinter, sputtering target and molding die, and production process of sintered compact |
AT8697U1 (en) | 2005-10-14 | 2006-11-15 | Plansee Se | TUBE TARGET |
JP4831468B2 (en) * | 2005-10-18 | 2011-12-07 | 日立金属株式会社 | Manufacturing method of Mo target material |
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
JP2007277671A (en) * | 2006-04-11 | 2007-10-25 | Hitachi Metals Ltd | METHOD FOR PRODUCING Mo ALLOY POWDER AND METHOD FOR PRODUCING SPUTTERING TARGET MATERIAL |
US20080087866A1 (en) * | 2006-10-13 | 2008-04-17 | H.C. Stark Inc. | Titanium oxide-based sputtering target for transparent conductive film, method for producing such film and composition for use therein |
US20100108501A1 (en) * | 2007-01-12 | 2010-05-06 | Nippon Steel Materials Co., Ltd | Mo-based sputtering target plate and method for manufacturing the same |
JP2008255440A (en) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | MoTi ALLOY SPUTTERING TARGET MATERIAL |
JPWO2009119757A1 (en) * | 2008-03-27 | 2011-07-28 | 日立金属株式会社 | Coated fine metal particles and method for producing the same |
CN101648320B (en) * | 2009-05-08 | 2012-06-27 | 宁波江丰电子材料有限公司 | Welding method of target materials and back plates |
JP2011089188A (en) * | 2009-10-26 | 2011-05-06 | Ulvac Japan Ltd | Method for producing titanium-containing sputtering target |
JP5550328B2 (en) * | 2009-12-22 | 2014-07-16 | 株式会社東芝 | Mo sputtering target and manufacturing method thereof |
WO2011125722A1 (en) * | 2010-04-01 | 2011-10-13 | 三菱化学株式会社 | Positive electrode material for lithium secondary battery, method for producing the same, positive electrode for lithium secondary battery, and lithium secondary battery |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
CN103140600B (en) * | 2010-09-30 | 2015-06-10 | 日立金属株式会社 | Method for producing molybdenum target |
CN103562432B (en) | 2011-05-10 | 2015-08-26 | H·C·施塔克公司 | Multistage sputtering target and relevant method thereof and article |
CN102321871B (en) * | 2011-09-19 | 2013-03-20 | 基迈克材料科技(苏州)有限公司 | Method for producing molybdenum alloy sputtering target for flat-panel display by using hot isostatic press |
TWI572725B (en) * | 2011-09-26 | 2017-03-01 | 日立金屬股份有限公司 | Method for producing moti target |
CN103182508B (en) * | 2011-12-27 | 2014-12-10 | 北京有色金属研究总院 | Preparation method for alloy target material applied to M-typed cathode coating film with high current density |
CN102560383B (en) * | 2012-01-12 | 2013-10-23 | 宝鸡市科迪普有色金属加工有限公司 | Molybdenum niobium alloy plate target material processing technology |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
CN103060762B (en) * | 2013-01-11 | 2018-02-23 | 江西科泰新材料有限公司 | The production technology of molybdenum niobium alloy target |
CN103205721B (en) * | 2013-03-19 | 2015-10-28 | 昆山海普电子材料有限公司 | A kind of production method of titanium-aluminium alloy target material |
CN103182507B (en) * | 2013-03-19 | 2015-04-15 | 昆山海普电子材料有限公司 | Production method of chromium-aluminium alloy target material |
CN103143710B (en) * | 2013-03-27 | 2015-12-23 | 宁夏东方钽业股份有限公司 | A kind of preparation method of molybdenum alloy target |
AT13602U3 (en) * | 2013-10-29 | 2014-08-15 | Plansee Se | Sputtering target and method of preparation |
CN104439236B (en) * | 2014-12-23 | 2016-08-17 | 金堆城钼业股份有限公司 | A kind of preparation method of zirconium oxide molybdenum alloy electrode |
CN105714253B (en) * | 2016-03-10 | 2017-11-24 | 洛阳爱科麦钨钼科技股份有限公司 | The preparation method of large scale, fine grain molybdenum tantalum alloy-sputtering targets material |
AT15356U1 (en) * | 2016-09-29 | 2017-07-15 | Plansee Se | Sputtering target |
CN106567048B (en) * | 2016-11-10 | 2018-11-27 | 洛阳科威钨钼有限公司 | A kind of manufacturing method of large size High-Purity Molybdenum alloy rotary target material |
JP7205213B2 (en) * | 2018-03-27 | 2023-01-17 | 日立金属株式会社 | TiW alloy target and manufacturing method thereof |
JP7419886B2 (en) * | 2019-03-20 | 2024-01-23 | 株式会社プロテリアル | Mo alloy target material and its manufacturing method |
JP7419885B2 (en) * | 2019-03-20 | 2024-01-23 | 株式会社プロテリアル | Mo alloy target material and its manufacturing method |
CN112975102B (en) * | 2021-03-04 | 2023-06-23 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper backboard |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3445276B2 (en) * | 1993-12-14 | 2003-09-08 | 株式会社東芝 | Mo-W target for wiring formation, Mo-W wiring thin film, and liquid crystal display device using the same |
JP3863204B2 (en) * | 1995-08-25 | 2006-12-27 | 株式会社アライドマテリアル | Sputtering target material and manufacturing method thereof |
US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
JP3748221B2 (en) * | 2001-10-23 | 2006-02-22 | 日立金属株式会社 | Mo-based sputtering target and method for producing the same |
-
2004
- 2004-02-27 JP JP2004055021A patent/JP4110533B2/en not_active Expired - Lifetime
-
2005
- 2005-02-24 CN CNB2005100095854A patent/CN1314504C/en active Active
- 2005-02-25 US US11/066,228 patent/US20050191202A1/en not_active Abandoned
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