JP2005236476A - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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Publication number
JP2005236476A
JP2005236476A JP2004040864A JP2004040864A JP2005236476A JP 2005236476 A JP2005236476 A JP 2005236476A JP 2004040864 A JP2004040864 A JP 2004040864A JP 2004040864 A JP2004040864 A JP 2004040864A JP 2005236476 A JP2005236476 A JP 2005236476A
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Prior art keywords
acoustic wave
surface acoustic
wave element
cavity
sealing member
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Hironori Nagasaki
寛範 長崎
Akimasa Tamano
晃正 玉野
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP2004040864A priority Critical patent/JP2005236476A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device, wherein no metallic particles are adhered to an electrode forming face of a surface acoustic wave element, even if a spark is produced in a process of welding a metallic lid to a base for configuring a package. <P>SOLUTION: The surface acoustic wave device accommodates the surface acoustic wave element 1 in the inside of the package 2, and the package 2 comprises a base 21, on which a cavity 20 for containing the surface acoustic wave element 1 is recessed and the metallic lid 22 welded and fixed to an opening edge of the base 21, while covering the cavity 20. The surface acoustic wave element 1 flip-chip-mounts the electrode forming face 14 toward the bottom face of the cavity 20 in the inside of the ceramic base 21, a sealing member 6 is arranged to a gap between the ceramic base 21 and the surface acoustic wave 1, and the sealing member 6 encloses the entire circumference of the electrode forming face 14 of the surface acoustic wave element 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、各種電子機器に装備される弾性表面波フィルターや弾性表面波レゾネータの如く、弾性表面波素子をパッケージに収容して構成される弾性表面波装置に関するものである。   The present invention relates to a surface acoustic wave device configured by housing a surface acoustic wave element in a package, such as a surface acoustic wave filter and a surface acoustic wave resonator provided in various electronic devices.

弾性表面波装置は、例えば弾性表面波フィルターは、図６に示す如くパッケージ(９)の内部に弾性表面波素子(１)を収容してなり、パッケージ(９)は、弾性表面波素子(１)を収容するためのキャビティ(90)が凹設されたセラミック基体(91)と、キャビティ(90)を覆ってセラミック基体(91)の開口縁に溶接固定された金属蓋(92)とから構成される(特許文献１参照)。   In the surface acoustic wave device, for example, a surface acoustic wave filter includes a surface acoustic wave element (1) inside a package (9) as shown in FIG. 6, and the package (9) is composed of a surface acoustic wave element (1). ), And a metal lid (92) that covers the cavity (90) and is welded and fixed to the opening edge of the ceramic substrate (91). (See Patent Document 1).

弾性表面波素子(１)は、例えば図７に示す如く、圧電基板(11)の表面に、一対の簾状電極からなるＩＤＴ(12)を形成すると共に、該ＩＤＴ(12)の両側にリフレクター(13)(13)を形成したものであって、ＩＤＴ(12)は例えば数μmの電極ピッチλに形成される。
圧電基板(11)上のＩＤＴ(12)は、図６に示す如くワイヤー(３)を介して、セラミック基体(91)に設けられたパッド部(93)に接続される。
上記弾性表面波素子(１)においては、ＩＤＴ(12)の一方の電極に電気信号を入力すると、圧電基板(11)の表面に弾性表面波が励起され、該弾性表面波は圧電基板(11)の表面を伝搬して他方の電極に伝達され、該電極から電気信号が出力される。 For example, as shown in FIG. 7, the surface acoustic wave element (1) is formed with an IDT (12) composed of a pair of hook-shaped electrodes on the surface of a piezoelectric substrate (11) and reflectors on both sides of the IDT (12). (13) (13) is formed, and the IDT (12) is formed with an electrode pitch λ of several μm, for example.
The IDT (12) on the piezoelectric substrate (11) is connected to a pad portion (93) provided on the ceramic substrate (91) via a wire (3) as shown in FIG.
In the surface acoustic wave element (1), when an electric signal is input to one electrode of the IDT (12), a surface acoustic wave is excited on the surface of the piezoelectric substrate (11), and the surface acoustic wave is transmitted to the piezoelectric substrate (11). ) Is transmitted to the other electrode, and an electric signal is output from the electrode.

図８は、上記弾性表面波装置の製造工程を示している。
先ず図８(ａ)に示す如く、表面にキャビティ(90)が凹設されると共に該キャビティ(90)を包囲して金属製のシームリング(94)が固定されたセラミック基体(91)を用意し、該セラミック基体(91)のキャビティ(90)の底面に、電極形成面(14)を上に向けて弾性表面波素子(１)を設置する。
次に図８(ｂ)の如く弾性表面波素子(１)の各電極とセラミック基体(91)のパッド部をワイヤー(３)によって互いに接続する。
そして、最後に図８(ｃ)の如く、セラミック基体(91)の開口縁にシームリング(94)を介して金属蓋(92)をシーム溶接し、キャビティ(90)を封止する。
特開平９−２９４０４４号公報(図６) FIG. 8 shows a manufacturing process of the surface acoustic wave device.
First, as shown in FIG. 8 (a), a ceramic substrate (91) is prepared in which a cavity (90) is recessed on the surface and a metal seam ring (94) is fixed so as to surround the cavity (90). Then, the surface acoustic wave element (1) is placed on the bottom surface of the cavity (90) of the ceramic substrate (91) with the electrode formation surface (14) facing upward.
Next, as shown in FIG. 8B, each electrode of the surface acoustic wave element (1) and the pad portion of the ceramic substrate (91) are connected to each other by a wire (3).
Finally, as shown in FIG. 8C, a metal lid (92) is seam welded to the opening edge of the ceramic substrate (91) via a seam ring (94) to seal the cavity (90).
JP-A-9-294044 (FIG. 6)

図６〜図８に示す従来の弾性表面波装置においては、セラミック基体(91)の開口縁に金属蓋(92)をシーム溶接する工程で火花が発生し、溶融した金属が直径数μmの微細な粒子となって、弾性表面波素子(１)の表面に付着する虞があった。例えば図７に破線で示す様に、金属粒(10)がＩＤＴ(12)の２つの電極に跨って付着した場合、両電極に短絡が生じることになる。   In the conventional surface acoustic wave device shown in FIGS. 6 to 8, sparks are generated in the process of seam welding the metal lid (92) to the opening edge of the ceramic substrate (91), and the molten metal is a fine metal having a diameter of several μm. There was a possibility that the particles would be attached to the surface of the surface acoustic wave device (1). For example, as shown by a broken line in FIG. 7, when the metal particles (10) adhere across the two electrodes of the IDT (12), a short circuit occurs between both electrodes.

特に、リモートキーレスエントリーシステム、タイヤ空気圧監視システムなどの車載用電子機器や携帯電話機に使用される弾性表面波フィルターや弾性表面波レゾネータにおいては、極めて低い不良発生率が要求されるため、上述の火花発生に伴う金属粒の素子表面への付着が大きな問題となる。
そこで本発明の目的は、パッケージを構成する基体に金属蓋を溶接する工程で火花が発生したとしても弾性表面波素子の電極形成面に金属粒が付着することのない弾性表面波装置を提供することである。 In particular, surface acoustic wave filters and surface acoustic wave resonators used in in-vehicle electronic devices such as remote keyless entry systems and tire pressure monitoring systems and mobile phones require a very low defect occurrence rate. The adhesion of metal particles to the element surface accompanying the generation becomes a big problem.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a surface acoustic wave device in which metal particles do not adhere to the electrode forming surface of a surface acoustic wave element even if a spark is generated in the process of welding a metal lid to a substrate constituting a package. That is.

本発明に係る弾性表面波装置は、密閉構造を有するパッケージ(２)の内部に弾性表面波素子(１)を収容してなり、パッケージ(２)は、弾性表面波素子(１)を収容するためのキャビティ(20)が凹設された基体(21)と、前記キャビティ(20)を覆って基体(21)の開口縁に溶接固定された金属蓋(22)とから構成される。
前記パッケージ(２)を構成する基体(21)の内部には、弾性表面波素子(１)が電極形成面(14)をキャビティ(20)の底面に向けてフリップチップ実装されると共に、基体(21)と弾性表面波素子(１)の間隙部に封止部材(６)が配備されて、該封止部材(６)によって弾性表面波素子(１)の電極形成面(14)が全周を包囲されている。 The surface acoustic wave device according to the present invention accommodates a surface acoustic wave element (1) inside a package (2) having a sealed structure, and the package (2) accommodates the surface acoustic wave element (1). A base body (21) having a cavity (20) for recessing and a metal lid (22) covering the cavity (20) and welded to the opening edge of the base body (21).
Inside the substrate (21) constituting the package (2), the surface acoustic wave element (1) is flip-chip mounted with the electrode forming surface (14) facing the bottom surface of the cavity (20), and the substrate ( 21) and the surface acoustic wave element (1) are provided with a sealing member (6), and the electrode forming surface (14) of the surface acoustic wave element (1) is surrounded by the sealing member (6). Besieged.

具体的構成において、パッケージ(２)を構成する基体(21)はセラミック製であって、少なくとも金属蓋(22)が溶接固定されるべき開口縁は金属層によって覆われており、該金属層に対して金属蓋(22)がシーム溶接されている。
又、基体(21)には、キャビティ(20)の底面に設置された弾性表面波素子(１)の背面と同じ高さを有する段差部(26)が形成され、封止部材(６)は、弾性表面波素子(１)の背面と基体(21)の段差部(26)との間に架設された板材によって形成されている。 In a specific configuration, the base body (21) constituting the package (2) is made of ceramic, and at least an opening edge to which the metal lid (22) is to be fixed by welding is covered with a metal layer. On the other hand, the metal lid (22) is seam welded.
Further, a step (26) having the same height as the back surface of the surface acoustic wave element (1) installed on the bottom surface of the cavity (20) is formed on the base body (21), and the sealing member (6) is formed. The plate is provided between the back surface of the surface acoustic wave element (1) and the step portion (26) of the base (21).

他の具体的構成において、封止部材(６)は、弾性表面波素子(１)を包囲して、弾性表面波素子(１)の外周面と基体(21)の内周面との間に充填された樹脂によって形成されている。
更に他の具体的構成において、封止部材(６)は、弾性表面波素子(１)を包囲して、弾性表面波素子(１)の外周面と基体(21)の底面との間に充填された樹脂によって形成されている。 In another specific configuration, the sealing member (6) surrounds the surface acoustic wave element (1) and is interposed between the outer peripheral surface of the surface acoustic wave element (1) and the inner peripheral surface of the base body (21). It is formed of a filled resin.
In still another specific configuration, the sealing member (6) surrounds the surface acoustic wave element (1) and fills between the outer peripheral surface of the surface acoustic wave element (1) and the bottom surface of the base body (21). It is formed by the resin made.

上記本発明の弾性表面波装置の製造工程においては、基体(21)のキャビティ(20)に弾性表面波素子(１)をフリップチップ実装し、封止部材(６)を配備した後、基体(21)の開口縁に金属蓋(22)を溶接固定する。
従って、基体(21)の開口縁に金属蓋(22)を溶接固定する工程で、火花が発生して溶融金属粒が飛散したとしても、弾性表面波素子(１)の電極形成面(14)は、封止部材(６)によって全周を包囲されているので、該金属粒は封止部材(６)によって受け止められ、弾性表面波素子(１)の電極形成面(14)に付着することはない。 In the manufacturing process of the surface acoustic wave device of the present invention, the surface acoustic wave element (1) is flip-chip mounted in the cavity (20) of the base (21), and the sealing member (6) is disposed. A metal lid (22) is fixed by welding to the opening edge of 21).
Therefore, even if a spark is generated and molten metal particles are scattered in the step of welding and fixing the metal lid (22) to the opening edge of the base body (21), the electrode forming surface (14) of the surface acoustic wave element (1) is obtained. Is surrounded by the sealing member (6), the metal particles are received by the sealing member (6) and adhere to the electrode forming surface (14) of the surface acoustic wave element (1). There is no.

本発明に係る弾性表面波装置によれば、基体に金属蓋を溶接する工程で火花が発生したとしても、弾性表面波素子の電極形成面に金属粒が付着することはないので、高い歩留まりが得られると共に、市場における不良発生率が大幅に低減される。   According to the surface acoustic wave device according to the present invention, even if a spark is generated in the process of welding the metal lid to the substrate, metal particles do not adhere to the electrode forming surface of the surface acoustic wave element, so that a high yield is achieved. As a result, the incidence of defects in the market is greatly reduced.

以下、本発明の実施形態につき、図面に沿って具体的に説明する。
本発明に係る弾性表面波装置は、図１に示す如く、直方体状のセラミック基体(21)の開口縁に金属蓋(22)をシーム溶接してなる密閉構造のパッケージ(２)を具え、該パッケージ(２)の内部に弾性表面波素子(１)を収容して構成されている。 Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.
As shown in FIG. 1, a surface acoustic wave device according to the present invention comprises a package (2) having a sealed structure formed by seam welding a metal lid (22) to an opening edge of a rectangular parallelepiped ceramic base (21). The surface acoustic wave element (1) is accommodated in the package (2).

図２に示す如く、セラミック基体(21)の表面には弾性表面波素子(１)を収容するためのキャビティ(20)が凹設され、該キャビティ(20)の底面に弾性表面波素子(１)が電極形成面(14)を下に向けてフリップチップ実装され、該弾性表面波素子(１)の各電極(図示省略)は金バンプ(31)を介してセラミック基体(21)のパッド部(図示省略)と接続されている。
セラミック基体(21)の開口部にはキャビティ(20)の全周を包囲して段差部(26)が形成され、該段差部(26)と弾性表面波素子(１)の背面との間に、樹脂を枠体状に成型してなる封止部材(６)が架設されている。
更に、セラミック基体(21)の開口縁にはシームリング(23)を介して金属蓋(22)がシーム溶接されている。 As shown in FIG. 2, a cavity (20) for accommodating the surface acoustic wave element (1) is recessed on the surface of the ceramic substrate (21), and the surface acoustic wave element (1) is formed on the bottom surface of the cavity (20). ) Are flip-chip mounted with the electrode forming surface (14) facing down, and each electrode (not shown) of the surface acoustic wave element (1) is padded on the ceramic substrate (21) via a gold bump (31). (Not shown).
A step portion (26) is formed in the opening of the ceramic substrate (21) so as to surround the entire circumference of the cavity (20), and between the step portion (26) and the back surface of the surface acoustic wave element (1). A sealing member (6) formed by molding a resin into a frame is provided.
Further, a metal lid (22) is seam welded to the opening edge of the ceramic base (21) via a seam ring (23).

図３は、上記本発明の弾性表面波装置の製造工程を示している。
先ず、図３(ａ)に示す如く弾性表面波素子(１)を用意する。又、図３(ｂ)に示す如く、表面にキャビティ(20)が凹設されると共にキャビティ(20)を包囲する段差部(26)が形成されたセラミック基体(21)を用意する。該セラミック基体(21)には、キャビティ(20)の開口縁にシームリング(23)が固定されている。ここで、図３(ａ)の如く弾性表面波素子(１)の電極形成面(14)には金のバンプ片(32)を形成し、或いは、図３(ｂ)の如くセラミック基体(21)のキャビティ(20)の底面には金のバンプ片(33)を形成しておく。
次に、図３(ｃ)に示す如く、セラミック基体(21)のキャビティ(20)の底面に、電極形成面(14)を下に向けて弾性表面波素子(１)を設置し、超音波接合或いは熱圧着接合を施して、弾性表面波素子(１)を金バンプ(31)によってセラミック基体(21)にフリップチップ実装する。 FIG. 3 shows a manufacturing process of the surface acoustic wave device of the present invention.
First, a surface acoustic wave element (1) is prepared as shown in FIG. Further, as shown in FIG. 3B, a ceramic substrate (21) is prepared in which a cavity (20) is recessed on the surface and a stepped portion (26) surrounding the cavity (20) is formed. A seam ring (23) is fixed to the opening edge of the cavity (20) in the ceramic substrate (21). Here, a gold bump piece (32) is formed on the electrode forming surface (14) of the surface acoustic wave element (1) as shown in FIG. 3 (a), or a ceramic substrate (21 as shown in FIG. 3 (b)). A gold bump piece (33) is formed on the bottom surface of the cavity (20).
Next, as shown in FIG. 3 (c), the surface acoustic wave element (1) is placed on the bottom surface of the cavity (20) of the ceramic substrate (21) with the electrode formation surface (14) facing down, and ultrasonic waves are placed. Bonding or thermocompression bonding is performed, and the surface acoustic wave element (1) is flip-chip mounted on the ceramic substrate (21) by the gold bump (31).

次に図３(ｄ)の如く、セラミック基体(21)の段差部(26)の表面と弾性表面波素子(１)の背面との間に、樹脂を枠体状に成型してなる封止部材(６)を架設し、接着剤或いは熱融着によって該封止部材(６)をセラミック基体(21)と弾性表面波素子(１)に接合固定する。
そして、最後に図３(ｅ)の如くセラミック基体(21)の開口縁にシームリング(23)を介して金属蓋(22)をシーム溶接し、パッケージ(２)の内部を封止する。 Next, as shown in FIG. 3D, sealing is performed by molding a resin into a frame between the surface of the stepped portion (26) of the ceramic substrate (21) and the back surface of the surface acoustic wave element (1). A member (6) is installed, and the sealing member (6) is bonded and fixed to the ceramic substrate (21) and the surface acoustic wave element (1) by an adhesive or heat fusion.
Finally, as shown in FIG. 3 (e), the metal lid (22) is seam welded to the opening edge of the ceramic substrate (21) via the seam ring (23) to seal the inside of the package (2).

上記製造工程においては、図３(ｅ)の如くセラミック基体(21)の開口縁にシームリング(23)を介して金属蓋(22)をシーム溶接する際、火花が発生して溶融金属粒が飛散したとしても、該金属粒は封止部材(６)によって受け止められ、弾性表面波素子(１)の電極形成面(14)に付着することはない。
従って、本発明の弾性表面波装置によれば、ＩＤＴ(12)を構成する一対の電極の間に金属粒の付着による短絡が発生する虞はなく、従来よりも高い歩留まりが得られる。 In the above manufacturing process, when the metal lid (22) is seam welded to the opening edge of the ceramic substrate (21) via the seam ring (23) as shown in FIG. Even if scattered, the metal particles are received by the sealing member (6) and do not adhere to the electrode forming surface (14) of the surface acoustic wave element (1).
Therefore, according to the surface acoustic wave device of the present invention, there is no possibility that a short circuit occurs due to adhesion of metal particles between the pair of electrodes constituting the IDT (12), and a higher yield than the conventional one can be obtained.

図４は、本発明に係る弾性表面波装置の封止部材(６)の他の構成例を示しており、弾性表面波素子(１)を包囲して、弾性表面波素子(１)の外周面と基体(21)の内周面との間に樹脂が充填され、該樹脂によって封止部材(６)が形成されている。
又、図５は、本発明に係る弾性表面波装置の封止部材(６)の更に他の構成例を示しており、弾性表面波素子(１)を包囲して、弾性表面波素子(１)の外周面と基体(21)の底面との間に樹脂が充填され、該樹脂によって封止部材(６)が形成されている。
これらの弾性表面波装置においても、セラミック基体(21)の開口縁に金属蓋(22)をシーム溶接する際、溶融金属粒は封止部材(６)によって受け止められ、弾性表面波素子(１)の電極形成面(14)に付着することはない。 FIG. 4 shows another configuration example of the sealing member (6) of the surface acoustic wave device according to the present invention, which surrounds the surface acoustic wave element (1) and surrounds the outer periphery of the surface acoustic wave element (1). A resin is filled between the surface and the inner peripheral surface of the substrate (21), and a sealing member (6) is formed by the resin.
FIG. 5 shows still another configuration example of the sealing member (6) of the surface acoustic wave device according to the present invention. The surface acoustic wave element (1) is surrounded by the surface acoustic wave element (1). ) And the bottom surface of the base body (21) are filled with resin, and the sealing member (6) is formed by the resin.
Also in these surface acoustic wave devices, when the metal lid (22) is seam welded to the opening edge of the ceramic substrate (21), the molten metal particles are received by the sealing member (6), and the surface acoustic wave element (1). It does not adhere to the electrode forming surface (14).

尚、本発明の各部構成は上記実施の形態に限らず、特許請求の範囲に記載の技術的範囲内で種々の変形が可能である。例えば、セラミック基体(21)の開口縁に金属蓋(22)を固定してキャビティ(20)を封止する方法としては、シームリング(23)を用いないダイレクトシーム溶接を採用することも可能であり、更には、金スズ溶融封止、半田封止などの種々の封止構造を採用することが出来る。
又、弾性表面波素子(１)をフリップチップ実装する方法としては、金バンプを用いた接合に限らず、半田や導電性接着剤を用いた種々の接合方法を採用することが可能である。
更に、封止部材(６)は、上述した材料に限らず、種々の絶縁性材料を用いて形成することが出来る。 In addition, each part structure of this invention is not restricted to the said embodiment, A various deformation | transformation is possible within the technical scope as described in a claim. For example, as a method of sealing the cavity (20) by fixing the metal lid (22) to the opening edge of the ceramic substrate (21), it is also possible to employ direct seam welding without using the seam ring (23). In addition, various sealing structures such as gold-tin fusion sealing and solder sealing can be employed.
The method of flip-chip mounting the surface acoustic wave element (1) is not limited to bonding using gold bumps, and various bonding methods using solder or conductive adhesive can be employed.
Furthermore, the sealing member (6) is not limited to the materials described above, and can be formed using various insulating materials.

本発明に係る弾性表面波装置の金属蓋を外した状態の斜視図である。It is a perspective view in the state where the metal lid of the surface acoustic wave device concerning the present invention was removed. 本発明に係る弾性表面波装置の断面図である。1 is a cross-sectional view of a surface acoustic wave device according to the present invention. 該弾性表面波装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of this surface acoustic wave apparatus. 本発明に係る他の弾性表面波装置の断面図である。It is sectional drawing of the other surface acoustic wave apparatus which concerns on this invention. 本発明に係る更に他の弾性表面波装置の断面図である。It is sectional drawing of the other surface acoustic wave apparatus which concerns on this invention. 従来の弾性表面波装置の金属蓋を外した状態の斜視図である。It is a perspective view of the state which removed the metal cover of the conventional surface acoustic wave apparatus. 弾性表面波素子の拡大平面図である。It is an enlarged plan view of a surface acoustic wave element. 従来の弾性表面波装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the conventional surface acoustic wave apparatus.

符号の説明Explanation of symbols

(１) 弾性表面波素子
(２) パッケージ
(20) キャビティ
(21) セラミック基体
(22) 金属蓋
(23) シームリング
(31) 金バンプ
(６) 封止部材 (1) Surface acoustic wave device
(2) Package
(20) Cavity
(21) Ceramic substrate
(22) Metal lid
(23) Seam ring
(31) Gold bump
(6) Sealing member

Claims (5)

密閉構造を有するパッケージ(２)の内部に弾性表面波素子(１)を収容してなり、パッケージ(２)は、弾性表面波素子(１)を収容するためのキャビティ(20)が凹設された基体(21)と、前記キャビティ(20)を覆って基体(21)の開口縁に溶接固定された金属蓋(22)とから構成される弾性表面波装置において、前記パッケージ(２)を構成する基体(21)の内部には、弾性表面波素子(１)が電極形成面(14)をキャビティ(20)の底面に向けてフリップチップ実装されると共に、基体(21)と弾性表面波素子(１)の間隙部に封止部材(６)が配備されて、該封止部材(６)によって弾性表面波素子(１)の電極形成面(14)が全周を包囲されていることを特徴とする弾性表面波装置。   The surface acoustic wave element (1) is accommodated in the package (2) having a sealed structure, and the package (2) has a cavity (20) for accommodating the surface acoustic wave element (1). The surface acoustic wave device comprises a substrate (21) and a metal lid (22) that covers the cavity (20) and is welded to the opening edge of the substrate (21). The surface acoustic wave element (1) is flip-chip mounted in the base (21) to be mounted with the electrode formation surface (14) facing the bottom surface of the cavity (20), and the base (21) and the surface acoustic wave element The sealing member (6) is disposed in the gap of (1), and the electrode forming surface (14) of the surface acoustic wave element (1) is surrounded by the sealing member (6). A surface acoustic wave device. パッケージ(２)を構成する基体(21)はセラミック製であって、少なくとも金属蓋(22)が溶接固定されるべき開口縁は金属層によって覆われており、該金属層に対して金属蓋(22)がシーム溶接されている請求項１に記載の弾性表面波装置。   The substrate (21) constituting the package (2) is made of ceramic, and at least the opening edge to which the metal lid (22) is to be fixed by welding is covered with a metal layer. The surface acoustic wave device according to claim 1, wherein 22) is seam welded. 基体(21)には、キャビティ(20)の底面に設置された弾性表面波素子(１)の背面と同じ高さを有する段差部(26)が形成され、封止部材(６)は、弾性表面波素子(１)の背面と基体(21)の段差部(26)との間に架設された板材によって形成されている請求項１又は請求項２に記載の弾性表面波装置。   A step portion (26) having the same height as the back surface of the surface acoustic wave element (1) installed on the bottom surface of the cavity (20) is formed on the base body (21), and the sealing member (6) is elastic. The surface acoustic wave device according to claim 1 or 2, wherein the surface acoustic wave device is formed by a plate material provided between the back surface of the surface wave element (1) and the step portion (26) of the base body (21). 封止部材(６)は、弾性表面波素子(１)を包囲して、弾性表面波素子(１)の外周面と基体(21)の内周面との間に充填された樹脂によって形成されている請求項１又は請求項２に記載の弾性表面波装置。   The sealing member (6) surrounds the surface acoustic wave element (1) and is formed of a resin filled between the outer peripheral surface of the surface acoustic wave element (1) and the inner peripheral surface of the base body (21). The surface acoustic wave device according to claim 1 or 2. 封止部材(６)は、弾性表面波素子(１)を包囲して、弾性表面波素子(１)の外周面と基体(21)の底面との間に充填された樹脂によって形成されている請求項１又は請求項２に記載の弾性表面波装置。
The sealing member (6) surrounds the surface acoustic wave element (1) and is formed of a resin filled between the outer peripheral surface of the surface acoustic wave element (1) and the bottom surface of the substrate (21). The surface acoustic wave device according to claim 1 or 2.
JP2004040864A 2004-02-18 2004-02-18 Surface acoustic wave device Pending JP2005236476A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007104401A (en) * 2005-10-05 2007-04-19 Sony Corp Semiconductor device and method of manufacturing same
WO2017193582A1 (en) * 2016-05-10 2017-11-16 江苏长电科技股份有限公司 Packaging structure for surface acoustic wave filter chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007104401A (en) * 2005-10-05 2007-04-19 Sony Corp Semiconductor device and method of manufacturing same
WO2017193582A1 (en) * 2016-05-10 2017-11-16 江苏长电科技股份有限公司 Packaging structure for surface acoustic wave filter chip

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