JPH09246905A - Surface acoustic wave device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inexpensive and highly reliable surface acoustic wave device in the surface acoustic wave device used for a communication equipment or the like. SOLUTION: For this surface acoustic wave device, a surface acoustic wave device pattern 2 at least provided with an interdigital electrode is formed on a piezoelectric substrate 1 and a surrounding wall 3 formed so as to surround a part where surface acoustic waves are propagated including the surface acoustic wave device pattern 2 and a cover body 4 for covering the upper space of the surrounding wall 3 and the part where the surface acoustic waves are propagated are provided. In such a manner, the need of forming a space on a chip as a conventional surface acoustic wave device is eliminated, assembly is performed by processes similar to an IC and the inexpensive and highly reliable surface acoustic wave device is obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used for communication equipment and the like and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in a surface acoustic wave device, a chip having a surface acoustic wave device pattern 32 formed on a piezoelectric substrate 31 as shown in FIG.
Then, the lid 34 was hermetically sealed.

[0003]

In recent years, the demand for surface mounting of surface acoustic wave devices has increased with the downsizing of equipment. However, the conventional monolithic ceramic package 33 is expensive, and since sealing is performed by using seam welding, it takes a lot of man-hours, and there is a problem in reliability such as metal powder falling from the lid 34 to cause a short circuit. It was

Therefore, an object of the present invention is to provide an inexpensive and highly reliable surface acoustic wave device.

[0005]

In order to achieve this object, a surface acoustic wave device of the present invention comprises a piezoelectric substrate provided with at least a comb-shaped electrode, and an enclosing portion surrounding the comb-shaped electrode and the surface acoustic wave. It has a wall and a cover that covers the surrounding space and the space above the portion where the surface acoustic wave propagates.

As a result, an inexpensive and highly reliable surface acoustic wave device can be obtained.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention is a piezoelectric substrate on which a surface acoustic wave device pattern having at least comb-shaped electrodes is formed, and at least the surface acoustic wave device pattern on the surface of the piezoelectric substrate. A surface acoustic wave device comprising: a surrounding wall provided so as to surround a portion through which the surface acoustic wave propagates; and a lid body provided so as to cover an upper space of the portion surrounded by the surrounding wall. Unlike the surface acoustic wave device of (1), it is not necessary to form a space on the surface acoustic wave device pattern, and the surface acoustic wave device can be assembled in the same process as the IC, and an inexpensive and highly reliable surface acoustic wave device can be obtained.

According to the second aspect of the invention, the surrounding wall and the lid are formed of a film-shaped photoresist, and the lid can be prevented from coming into contact with the vibrating portion.

According to the third aspect of the present invention, a substance mainly containing an epoxy resin is used as a photoresist, and a strong surrounding wall and a lid can be formed.

According to a fourth aspect of the present invention, a substance that is developed by an organic solvent or a mixture of water and an organic solvent is used as a photoresist, and it is prevented that the surface acoustic wave device pattern is damaged during development. be able to.

According to a fifth aspect of the present invention, the surrounding wall and the lid are made of the same material, and the adhesion between the surrounding wall and the lid can be enhanced.

According to a sixth aspect of the present invention, the height of the surrounding wall is set to 1/100 or more of the minimum dimension of the inner wall spacing of the surrounding wall, and a stable space is formed above the vibrating portion. can do.

According to a seventh aspect of the present invention, the thickness of the surrounding wall in the propagation direction of the surface acoustic wave is made thicker than the thickness of the surrounding wall in the same direction as the propagation direction of the surface acoustic wave.
The surface acoustic wave that has passed through the surface acoustic wave device pattern including the comb-shaped electrodes or the reflective electrodes can be attenuated, and the unnecessary wave absorbing material that has been conventionally required is not necessary.

According to the eighth aspect of the present invention, the inside of the surrounding wall in the propagation direction of the surface acoustic wave is obliquely intersected with the propagation direction of the surface acoustic wave, and the unnecessary wave is reflected inside the surrounding wall. It is possible to prevent deterioration of characteristics.

According to a ninth aspect of the present invention, a buffer layer is provided on the upper portion of the lid, and when the surface acoustic wave device is molded with resin, distortion can be absorbed, so that frequency deviation is mitigated. be able to.

According to a tenth aspect of the present invention, a silicone resin or a mixture of a silicone resin and an epoxy resin is used as the buffer layer, and distortion can be absorbed when the surface acoustic wave device is molded with the resin. As a result, the frequency shift can be reduced.

According to an eleventh aspect of the present invention, the buffer layer is made softer than the lid body, and when the surface acoustic wave device is molded with resin, distortion can be absorbed, so that the frequency shift is mitigated. You can

According to the twelfth aspect of the present invention, the thickness of the buffer layer is made thicker than the thickness of the lid, and when the surface acoustic wave device is molded with resin, distortion can be absorbed, so that the frequency can be reduced. The gap can be mitigated.

According to a thirteenth aspect of the present invention, a lead frame, the surface acoustic wave device according to the first aspect mounted on the lead frame, and an insulating resin obtained by molding the surface acoustic wave device and the lead frame. In addition, the lead frame and the surface acoustic wave device are electrically connected to each other, and there is no need to form a space on the surface acoustic wave device pattern as in the conventional surface acoustic wave device. An inexpensive and highly reliable surface acoustic wave device that can be assembled by similar steps is obtained.

According to a fourteenth aspect of the present invention, a substance mainly containing an epoxy resin is used as the insulating resin.
It can be assembled in the same process as IC.

According to a fifteenth aspect of the present invention, the lead frame is bent to the side to which the surface acoustic wave device is adhered, and the shielding effect is enhanced by soldering to the substrate using the bent portion.

According to a sixteenth aspect of the present invention, there is provided a ceramic substrate having an electrode on a surface thereof, a metal cap placed on the ceramic substrate, and the surface acoustic wave device according to the first aspect housed in the metal cap. In addition, the ceramic substrate and the surface acoustic wave device are electrically connected to each other through the electrodes, and the cost is lower than that using a conventional laminated ceramic package.

According to the seventeenth aspect of the present invention, at least one through hole is provided in the portion of the ceramic substrate where the electrodes are provided, which is less expensive than the conventional laminated ceramic package.

According to the eighteenth aspect of the present invention, the metal layer is provided at the connecting portion between the metal cap and the ceramic substrate, and the cost is lower than that using the conventional laminated ceramic package.

According to a nineteenth aspect of the present invention, a ceramic layer is provided between the metal layer and the ceramic substrate,
The cost is lower than that using a conventional monolithic ceramic package.

According to a twentieth aspect of the present invention, a package, a surface acoustic wave element housed in the package, and an insulating resin that hermetically seals the package are provided, and the surface acoustic wave element includes a piezoelectric substrate. A surface acoustic wave device pattern having at least a comb-shaped electrode formed on the piezoelectric substrate, at least the surface acoustic wave device pattern, and a surrounding wall provided so as to surround a portion through which the surface acoustic wave propagates, and at least the surrounding wall. A lid provided so as to cover an upper space of a portion surrounded by a wall, a bonding pad provided outside the surrounding wall so as to be electrically connected to the surface acoustic wave device pattern, and a bonding pad provided on the bonding pad. An elastic surface having bumps provided, and the package and the surface acoustic wave element being bonded to each other with a conductive adhesive through the bumps. A device, to have good small in high frequency characteristics.

According to a twenty-first aspect of the present invention, there is provided a printed circuit board, a surface acoustic wave element provided on the printed circuit board, and an insulating resin that hermetically seals the surface acoustic wave element. Is a piezoelectric substrate, a surface acoustic wave device pattern having at least a comb-shaped electrode formed on the piezoelectric substrate, at least the surface acoustic wave device pattern, and an enclosing wall provided so as to surround a portion where the surface acoustic wave propagates. A lid provided so as to cover at least the upper space of the portion surrounded by the surrounding wall, and a bonding pad provided outside the surrounding wall so as to be electrically connected to the surface acoustic wave device pattern, A bump is provided on the bonding pad, and the printed circuit board and the surface acoustic wave element are bonded to each other with a conductive adhesive via the bump. A sexual surface wave devices, can be miniaturized circuit.

According to a twenty-second aspect of the present invention, a plurality of surface acoustic wave patterns are formed on the piezoelectric substrate, and then a plurality of surrounding walls are formed on the piezoelectric substrate so as to surround at least one surface acoustic wave pattern. A method for manufacturing a surface acoustic wave device, comprising forming a lid body so as to cover the surrounding wall and an upper space of a portion surrounded by the surrounding wall, and then dividing the piezoelectric substrate into a predetermined size. Unlike the conventional surface acoustic wave device, it is not necessary to form a space on the surface acoustic wave device pattern, and the surface acoustic wave device can be assembled in the same process as the IC, and an inexpensive and highly reliable surface acoustic wave device can be obtained. .

According to a twenty-third aspect of the present invention, the piezoelectric substrate on which the surface acoustic wave pattern, the surrounding wall and the lid are formed is divided into a predetermined size, and then the piezoelectric substrate is bonded to a lead frame, and wire bonding is performed. The electrical connection between the piezoelectric substrate and the lead frame is made by means of, and then the piezoelectric substrate and the wire bonding portion are molded with a resin, which can be assembled in the same process as the IC.

According to a twenty-fourth aspect of the present invention, the piezoelectric substrate having the surface acoustic wave pattern, the surrounding wall and the lid is bonded to the lead frame with a silicone resin or a mixture of a silicone resin and an epoxy resin. Therefore, the distortion caused by the resin can be relaxed.

In the twenty-fifth aspect of the present invention, after forming the lid, the buffer layer is formed on the lid by screen printing, and the buffer layer can be easily formed.

According to a twenty-sixth aspect of the present invention, a piezoelectric substrate having a surface acoustic wave pattern, a surrounding wall and a lid is divided into a predetermined size, the piezoelectric substrate is bonded to a ceramic substrate, and then the ceramic substrate is bonded. An electrical connection is made between the piezoelectric substrate and the ceramic substrate by wire bonding, and then a metal cap is covered so as to cover the piezoelectric substrate and hermetically sealed.Compared with a conventional multilayer ceramic package. Become cheaper.

According to the twenty-seventh aspect of the present invention, the hermetic sealing is performed by using high temperature solder having a melting point of 270 ° C. or higher. In the conventional chip, scattering of metal particles may cause a short circuit. Since the surface acoustic wave device pattern is covered with the surrounding wall and the lid, a short circuit does not occur.

According to the twenty-eighth aspect of the present invention, the hermetic sealing is performed by using the gold-tin alloy, and in the conventional chip, the metal particles are scattered to cause a short circuit, but the surface acoustic wave device is used. Since the pattern is covered with the surrounding wall and the lid, a short circuit does not occur.

According to the twenty-ninth aspect of the present invention, the hermetic sealing is performed by heating in a furnace, and mass production is possible.

In the thirtieth aspect of the invention, the hermetic sealing is performed by high frequency heating, and the sealing can be performed in a short time.

According to the thirty-first aspect of the present invention, the flux is used for hermetically sealing, and since the flux does not adhere to the surface acoustic wave device pattern, the flux can be used unlike the conventional one. Therefore, stable sealing can be achieved.

According to the thirty-second aspect of the present invention, the resin is applied to at least the wire bonding portion before the hermetically sealing, so that the corrosion due to the flux can be prevented.

FIG. 1 shows the embodiment of the present invention.
From now on, description will be made with reference to FIG. (Embodiment 1) FIG. 1 is a sectional view of a surface acoustic wave device according to an embodiment of the present invention. First, on the piezoelectric substrate 1 such as lithium niobate, lithium tantalate, or quartz,
After forming a surface acoustic wave device pattern 2 including a comb-shaped electrode, a reflection electrode, or the like with aluminum or an aluminum alloy, the surface acoustic wave device pattern 2 and a portion where the surface acoustic wave propagates are surrounded, and the surface acoustic wave device pattern 2 is formed. Bonding pad 1 for extracting the electrical signal of
The surrounding wall 3 from which the portion 6 is removed and the lid 4 covering the surrounding space of the surrounding wall 3 and the portion where the surface acoustic wave propagates are formed of a film resist. This film-like resist is required to have adhesiveness and a certain degree of hardness so as not to come into contact with the piezoelectric substrate 1 when the lid 4 is formed. If the resist is of a type that can be developed with an alkaline developer, the electrode pattern may be corroded during development, so the resist may be developed with an organic solvent or a mixture of water and an organic solvent. desirable.

In order to prevent the lid 4 from coming into contact with the piezoelectric substrate 1, the hardness of the film-like resist and the ratio of the thickness of the film-like resist to the distance between the inner walls of the surrounding wall 3 are important. Usually, the hardness of a film-like resist is almost determined by its material, so that the actual device design can select the thickness and the inner wall spacing. When the minimum dimension of the inner wall spacing is 2 mm, the height of the surrounding wall 3 is required to be 20 μm so that the lid 4 does not come into contact with the piezoelectric substrate 1, and it is safer to have a height of 40 μm or more when the whole is molded. Is.

That is, the height of the surrounding wall 3 needs to be 1/100 or more of the minimum dimension of the inner wall spacing of the surrounding wall 3, and preferably 1/50 or more.

An epoxy-based solder resist or the like used for a printed circuit board can be mentioned as a material satisfying such conditions.

The enclosing wall 3 is provided in order to obtain the adhesiveness withstanding the molding pressure at the time of molding and also from the viewpoint of simplifying the process.
It is better to use a film resist made of the same material for the lid 4 and the lid 4.

After forming the surrounding wall 3 and the lid body 4 as described above, an element provided with the buffer layer 5 formed by screen-printing silicone or the like softer than the lid body 4 on the lid body 4 is formed. obtain. Further, the buffer layer 5 is preferably thicker than the lid body 4. This is because, when the whole is molded, stress is applied to the piezoelectric substrate 1 due to molding distortion of the molding resin, and there is a risk of frequency shift. This problem becomes serious especially for products such as IF filters that require high frequency accuracy. By providing the buffer layer 5 for such a product, the stress caused by the mold resin can be relieved.

The element formed as described above is bonded to the lead frame 6, and after electrical connection is made by wire bonding, the periphery of the element and the wire bonding portion is molded with an insulating resin 7 mainly composed of epoxy resin. .
In the conventional surface acoustic wave device, it is necessary to provide a space above the piezoelectric substrate 1, but with the configuration of the present invention, the upper portion of the piezoelectric substrate 1 is covered with the lid body 4, so that it is similar to the IC. Further, the insulating resin 7 can be sealed, and an inexpensive surface acoustic wave device can be obtained.

Further, the surface mounting can be realized by bending the lead frame 6 so that the surface acoustic wave device pattern 2 on the piezoelectric substrate 1 is on the side of the substrate to be soldered,
Since the lead frame 6 covers the piezoelectric substrate 1 when soldered, the shield effect can be enhanced by dropping the terminal connected to the lead frame 6 to the ground.

(Second Embodiment) FIG. 2 is a top view of a surface acoustic wave device according to the present embodiment. In FIG. 2, the thickness of the surrounding wall 3a in the surface acoustic wave propagation direction is made thicker than the thickness of the surrounding wall 3b parallel to the surface acoustic wave propagation direction. Normally, it is sufficient that the thickness of the surrounding wall 3b is about 100 microns, but the thicker the surrounding wall 3a, the better. By doing so, the surface acoustic wave device pattern 2 including the comb-shaped electrodes or the reflection electrodes 2 is formed. The surface acoustic wave that has passed through can be attenuated, and the unnecessary wave absorber that has been conventionally required is not required. Further, by making the inside of the surrounding wall 3a in the propagation direction of the surface acoustic wave intersect the surface acoustic wave propagation direction obliquely, it is possible to prevent deterioration of characteristics due to reflection of unnecessary waves inside the surrounding wall 3a. it can.

(Embodiment 3) FIG. 3 shows a top view of a surface acoustic wave device according to this embodiment. In FIG. 3, two surface acoustic wave device patterns 2 of the resonator type filter are provided on the piezoelectric substrate 1 and are connected in series, and the surface acoustic wave device patterns 2 of the respective resonator type filters are separately surrounded. The surrounding wall 3 is formed. By doing so, it is possible to prevent the deterioration of the characteristics due to the leakage of the surface acoustic waves from each other. Therefore, when there are a plurality of surface acoustic wave device patterns 2, it is desirable to form the surrounding wall 3 for each.

(Embodiment 4) FIG. 4 is a sectional view of a surface acoustic wave device according to this embodiment. In FIG. 4, FIG.
Similar to the one shown in FIG. 3, a surface acoustic wave device pattern 2, a surrounding wall 3 and a lid 4 formed on a piezoelectric substrate 1 is adhered onto a ceramic substrate 8 having an electrode 15, and means such as wire bonding is used. After the electrical connection between the bonding pad 16 and the electrode 15 is made with, the metal cap 9 is covered and hermetically sealed. As a method for hermetically sealing, a metal layer 12 is formed on a portion of the ceramic substrate 8 that is in contact with the metal cap 9, and is heated in a furnace by high-temperature solder, gold-tin alloy or the like, or is heated by high frequency.
The melting point of this high-temperature solder or gold-tin alloy is preferably 270 ° C. or higher so that it can withstand solder reflow of surface mount components. The terminals of the electrodes 15 are taken out to the outside via the via holes 10 provided in the ceramic substrate 8.

Conventionally, when such a sealing is performed, the sealing metal is scattered on the piezoelectric substrate 1 to cause a short circuit, or the flux cannot be used for sealing, so that the sealing is unstable. It was becoming
By doing so, the sealing can be surely performed, and the short circuit due to the metal powder is eliminated. Further, when flux is used for sealing, it is desirable to apply a resin such as silicone to the peripheral portion to which wire bonding is applied.

(Embodiment 5) FIG. 5 is a sectional view of a surface acoustic wave device according to this embodiment. In FIG. 5, FIG.
The piezoelectric substrate 1 is adhered to the ceramic substrate 8 and the metal cap 9 is covered to hermetically seal the same as shown in FIG.
An electrode 15 is provided on a ceramic single plate without providing 0, and a ceramic layer 11 is further formed on a portion in contact with the metal cap 9 and a metal layer 12 is further formed thereon. Since the ceramic layer 11 and the metal layer 12 can be fired at the same time as firing the ceramic single plate, they can be produced at low cost.

(Embodiment 6) FIG. 6 is a sectional view of a surface acoustic wave device according to this embodiment. In FIG. 6, FIG.
In the same manner as the one shown in, the bump 13 such as gold is formed on the bonding pad 16 of the element in which the surface acoustic wave device pattern 2, the surrounding wall 3 and the lid 4 are formed on the piezoelectric substrate 1, and the bump 13 is electrically conductive. The adhesive 14 is attached to a predetermined printed circuit board 17 and potted with an insulating resin 7. The conductive adhesive 14 is usually an epoxy resin mixed with powder of silver or the like, and the insulating resin 7 is an epoxy resin or the like.

Although the buffer layer 5 as shown in FIG. 1 is not provided in FIG. 6, it goes without saying that the buffer layer 5 may be provided.

It is also possible to use a predetermined package instead of the printed board 17 and hermetically seal the package with the insulating resin 7.

[0055]

As described above, according to the present invention, it is possible to obtain an effect that a device which is smaller in size, cheaper and more reliable than the conventional surface acoustic wave device can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view of a surface acoustic wave device according to an embodiment of the present invention.

FIG. 2 is a top view of a surface acoustic wave device according to another embodiment of the present invention.

FIG. 3 is a top view of a surface acoustic wave device according to another embodiment of the present invention.

FIG. 4 is a sectional view of a surface acoustic wave device according to another embodiment of the present invention.

FIG. 5 is a sectional view of a surface acoustic wave device according to another embodiment of the present invention.

FIG. 6 is a sectional view of a surface acoustic wave device according to another embodiment of the present invention.

FIG. 7 is a sectional view of a surface acoustic wave device using a conventional monolithic ceramic package.

[Explanation of symbols]

 1 Piezoelectric Substrate 2 Surface Acoustic Wave Device Pattern 3 Enclosing Wall 4 Lid 5 Buffer Layer 6 Lead Frame 7 Insulating Resin 8 Ceramic Substrate 9 Metal Cap 10 Via Hole 11 Ceramic Layer 12 Metal Layer 13 Bump 14 Conductive Adhesive 15 Electrode 16 Bonding Pad

Claims (32)

[Claims] 1. A piezoelectric substrate on which at least one surface acoustic wave device pattern having at least a comb-shaped electrode is formed, and at least the surface acoustic wave device pattern and a portion where surface acoustic waves propagate on the surface of the piezoelectric substrate. A surface acoustic wave device comprising: the surrounding wall thus provided; and a lid provided so as to cover at least an upper space of a portion surrounded by the surrounding wall. 2. The surface acoustic wave device according to claim 1, wherein the surrounding wall and the lid are made of a film-shaped photoresist. 3. The surface acoustic wave device according to claim 2, wherein the photoresist is mainly made of epoxy resin. 4. The surface acoustic wave device according to claim 2, wherein the photoresist is a substance developed by an organic solvent or a mixture of water and an organic solvent. 5. The surface acoustic wave device according to claim 1, wherein the surrounding wall and the lid are made of the same material. 6. The surface acoustic wave device according to claim 1, wherein the height of the surrounding wall is 1/100 or more of the minimum dimension of the inner wall spacing of the surrounding wall. 7. The surface acoustic wave device according to claim 1, wherein the thickness of the surrounding wall in the propagation direction of the surface acoustic wave is larger than the thickness of the surrounding wall in the same direction as the propagation direction of the surface acoustic wave. . 8. The inside of the surrounding wall in the propagation direction of the surface acoustic wave is obliquely intersected with the propagation direction of the surface acoustic wave.
A surface acoustic wave device according to claim 1. 9. The surface acoustic wave device according to claim 1, wherein a buffer layer is provided on an upper portion of the lid body. 10. The surface acoustic wave device according to claim 9, wherein the buffer layer is formed of silicone resin or a mixture of silicone resin and epoxy resin. 11. The surface acoustic wave device according to claim 9, wherein the buffer layer is softer than the lid. 12. The surface acoustic wave device according to claim 9, wherein the buffer layer is thicker than the lid. 13. A lead frame, and the surface acoustic wave device according to claim 1, which is bonded to the lead frame.
The surface acoustic wave device according to claim 1, further comprising: an insulating resin obtained by molding the surface acoustic wave device and the lead frame, wherein the lead frame and the surface acoustic wave device are electrically connected. 14. The surface acoustic wave device according to claim 13, wherein the insulating resin is made of a substance mainly containing an epoxy resin. 15. The surface acoustic wave device according to claim 13, wherein the lead frame is bent to the side to which the surface acoustic wave device is bonded. 16. A ceramic substrate comprising a ceramic substrate having an electrode on a surface thereof, a metal cap covering the ceramic substrate, and the surface acoustic wave device according to claim 1 housed in the metal cap. The surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is electrically connected to the surface acoustic wave device through the electrode. 17. The surface acoustic wave device according to claim 16, wherein at least one through hole is provided in a portion of the ceramic substrate where the electrode is provided. 18. The surface acoustic wave device according to claim 16, wherein a metal layer is provided at a connecting portion between the metal cap and the ceramic substrate. 19. The surface acoustic wave device according to claim 18, wherein a ceramic layer is provided between the metal layer and the ceramic substrate. 20. A package, a surface acoustic wave device housed in the package, and an insulating resin that hermetically seals the package, the surface acoustic wave device being formed on a piezoelectric substrate and the piezoelectric substrate. Of the surface acoustic wave device pattern having at least the comb-shaped electrodes, at least the surface acoustic wave device pattern, and the surrounding wall provided so as to surround the portion through which the surface acoustic wave propagates, and at least the portion surrounded by the surrounding wall. A lid provided so as to cover the upper space, a bonding pad provided so as to be electrically connected to the surface acoustic wave device pattern outside the surrounding wall, and a bump provided on the bonding pad,
The surface acoustic wave device in which the package and the surface acoustic wave element are bonded to each other with a conductive adhesive via the bumps. 21. A printed circuit board, a surface acoustic wave device provided on the printed circuit board, and an insulating resin that hermetically seals the surface acoustic wave device. The surface acoustic wave device includes a piezoelectric substrate and A surface acoustic wave device pattern having at least a comb-shaped electrode formed on a piezoelectric substrate; an enclosure wall provided so as to surround at least the surface acoustic wave device pattern and a portion through which the surface acoustic wave propagates; and at least the enclosure wall. A lid provided so as to cover the space above the enclosed portion, a bonding pad provided outside the surrounding wall so as to be electrically connected to the surface acoustic wave device pattern, and provided on the bonding pad. A surface acoustic wave device having a bump, wherein the printed circuit board and the surface acoustic wave element are bonded to each other with a conductive adhesive via the bump. 22. A plurality of surface acoustic wave patterns are formed on a piezoelectric substrate, and then a plurality of surrounding walls are formed on the piezoelectric substrate so as to surround at least one of the surface acoustic wave patterns, and then the surrounding wall. And a method of manufacturing a surface acoustic wave device, wherein a lid is formed so as to cover an upper space of a portion surrounded by the surrounding wall, and then the piezoelectric substrate is divided into a predetermined size. 23. After dividing the piezoelectric substrate into a predetermined size, the piezoelectric substrate is adhered to a lead frame, the piezoelectric substrate and the lead frame are electrically connected by wire bonding, and then the piezoelectric substrate and The method of manufacturing a surface acoustic wave device according to claim 22, wherein the wire bonding portion is molded with resin. 24. The method of manufacturing a surface acoustic wave device according to claim 23, wherein the piezoelectric substrate is bonded to the lead frame with a silicone resin or a mixture of a silicone resin and an epoxy resin. 25. The method of manufacturing a surface acoustic wave device according to claim 22, wherein after forming the lid, a buffer layer is formed on the lid by screen printing. 26. The piezoelectric substrate is divided into a predetermined size, the piezoelectric substrate is adhered to a ceramic substrate, and then the piezoelectric substrate and the ceramic substrate are electrically connected by wire bonding, and then the piezoelectric substrate is formed. The method of manufacturing a surface acoustic wave device according to claim 22, wherein a metal cap is covered so as to cover the substrate and hermetically sealed. 27. The method of manufacturing a surface acoustic wave device according to claim 26, wherein the hermetic sealing is performed by using high temperature solder having a melting point of 270 ° C. or higher. 28. The method of manufacturing a surface acoustic wave device according to claim 26, wherein the hermetic sealing is performed using a gold-tin alloy. 29. The method of manufacturing a surface acoustic wave device according to claim 26, wherein the hermetic sealing is performed by heating in a furnace. 30. The method of manufacturing a surface acoustic wave device according to claim 26, wherein the hermetic sealing is performed by high frequency heating. 31. The method of manufacturing a surface acoustic wave device according to claim 26, wherein the airtight sealing is performed by using a flux. 32. The method of manufacturing a surface acoustic wave device according to claim 31, wherein resin is applied to at least the wire bonding portion before hermetically sealing.