JP2005236475A - Surface acoustic wave device and manufacturing method thereof - Google Patents

Surface acoustic wave device and manufacturing method thereof Download PDF

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JP2005236475A
JP2005236475A JP2004040863A JP2004040863A JP2005236475A JP 2005236475 A JP2005236475 A JP 2005236475A JP 2004040863 A JP2004040863 A JP 2004040863A JP 2004040863 A JP2004040863 A JP 2004040863A JP 2005236475 A JP2005236475 A JP 2005236475A
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acoustic wave
surface acoustic
metal lid
cavity
wave element
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Akimasa Tamano
晃正 玉野
Hironori Nagasaki
寛範 長崎
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device wherein no metallic particles adhere to the surface of a surface acoustic wave element, even if sparks are produced in a process of welding a metallic lid to a base for configuring a package. <P>SOLUTION: The surface acoustic wave accommodates the surface acoustic wave element 1 in the inside of the package 2, and the package 2 comprises a ceramic base 21 recessed with a cavity 20 to accommodate the surface acoustic wave element 1; and a metallic lid 22 welded and fixed to an opening edge of the ceramic base 21, while covering the cavity 20. A resin wall 5 for enclosing the entire circumference of the containing space of the surface acoustic wave element 1 is interposed between the metallic lid 22 and the ceramic base 21, configuring the package 2 along the inside of the welded and fixed part between the both. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、各種電子機器に装備される弾性表面波フィルターや弾性表面波レゾネータの如く、弾性表面波素子をパッケージに収容して構成される弾性表面波装置、並びにその製造方法に関するものである。   The present invention relates to a surface acoustic wave device configured by housing a surface acoustic wave element in a package, such as a surface acoustic wave filter and a surface acoustic wave resonator, which are equipped in various electronic devices, and a method for manufacturing the same.

弾性表面波装置、例えば弾性表面波フィルターは、図5に示す如くパッケージ(9)の内部に弾性表面波素子(1)を収容してなり、パッケージ(9)は、弾性表面波素子(1)を収容するためのキャビティ(90)が凹設されたセラミック基体(91)と、キャビティ(90)を覆ってセラミック基体(91)の開口縁に溶接固定された金属蓋(92)とから構成される(特許文献1参照)。   A surface acoustic wave device, for example, a surface acoustic wave filter, includes a surface acoustic wave element (1) inside a package (9) as shown in FIG. 5, and the package (9) is composed of a surface acoustic wave element (1). A ceramic base (91) having a cavity (90) for receiving a cavity, and a metal lid (92) covering the cavity (90) and welded to the opening edge of the ceramic base (91). (See Patent Document 1).

弾性表面波素子(1)は、例えば図6に示す如く、圧電基板(11)の表面に、一対の簾状電極からなるIDT(12)を形成すると共に、該IDT(12)の両側にリフレクター(13)(13)を形成したものであって、IDT(12)は例えば数μmの電極ピッチλに形成される。
圧電基板(11)上のIDT(12)は、図5に示す如くワイヤー(3)を介して、セラミック基体(91)に設けられたパッド部(93)に接続される。
上記弾性表面波素子(1)においては、IDT(12)の一方の電極に電気信号を入力すると、圧電基板(11)の表面に弾性表面波が励起され、該弾性表面波は圧電基板(11)の表面を伝搬して他方の電極に伝達され、該電極から電気信号が出力される。
For example, as shown in FIG. 6, the surface acoustic wave element (1) is formed with an IDT (12) composed of a pair of hook-shaped electrodes on the surface of a piezoelectric substrate (11) and reflectors on both sides of the IDT (12). (13) (13) is formed, and the IDT (12) is formed with an electrode pitch λ of several μm, for example.
The IDT (12) on the piezoelectric substrate (11) is connected to a pad portion (93) provided on the ceramic substrate (91) via a wire (3) as shown in FIG.
In the surface acoustic wave element (1), when an electric signal is input to one electrode of the IDT (12), a surface acoustic wave is excited on the surface of the piezoelectric substrate (11), and the surface acoustic wave is transmitted to the piezoelectric substrate (11). ) Is transmitted to the other electrode, and an electric signal is output from the electrode.

図7は、上記弾性表面波装置の製造工程を示している。
先ず図7(a)に示す如く、表面にキャビティ(90)が凹設されると共に該キャビティ(90)を包囲して金属製のシームリング(94)が固定されたセラミック基体(91)を用意し、該セラミック基体(91)のキャビティ(90)の底面に、電極形成面(14)を上に向けて弾性表面波素子(1)を設置する。
次に図7(b)の如く弾性表面波素子(1)の各電極とセラミック基体(91)のパッド部をワイヤー(3)によって互いに接続する。
そして、最後に図7(c)の如く、セラミック基体(91)の開口縁にシームリング(94)を介して金属蓋(92)をシーム溶接し、キャビティ(90)を封止する。
特開平9−294044号公報(図6)
FIG. 7 shows a manufacturing process of the surface acoustic wave device.
First, as shown in FIG. 7 (a), a ceramic substrate (91) is prepared in which a cavity (90) is recessed on the surface and a metal seam ring (94) is fixed surrounding the cavity (90). Then, the surface acoustic wave element (1) is placed on the bottom surface of the cavity (90) of the ceramic substrate (91) with the electrode formation surface (14) facing upward.
Next, as shown in FIG. 7B, each electrode of the surface acoustic wave element (1) and the pad portion of the ceramic substrate (91) are connected to each other by a wire (3).
Finally, as shown in FIG. 7 (c), the metal lid (92) is seam welded to the opening edge of the ceramic base (91) via the seam ring (94) to seal the cavity (90).
JP-A-9-294044 (FIG. 6)

図5〜図7に示す従来の弾性表面波装置においては、セラミック基体(91)の開口縁に金属蓋(92)をシーム溶接する工程で火花が発生し、溶融した金属が直径数μmの微細な粒子となって、弾性表面波素子(1)の表面に付着する虞があった。例えば図6に破線で示す様に、金属粒(10)がIDT(12)の2つの電極に跨って付着した場合、両電極に短絡が生じることになる。   In the conventional surface acoustic wave device shown in FIGS. 5 to 7, a spark is generated in the process of seam welding the metal lid (92) to the opening edge of the ceramic substrate (91), and the molten metal is a fine micrometer having a diameter of several μm. There was a possibility that the particles would be attached to the surface of the surface acoustic wave device (1). For example, as shown by a broken line in FIG. 6, when the metal particle (10) adheres across two electrodes of the IDT (12), a short circuit occurs between both electrodes.

特に、リモートキーレスエントリーシステム、タイヤ空気圧監視システムなどの車載用電子機器や携帯電話機に使用される弾性表面波フィルターや弾性表面波レゾネータにおいては、極めて低い不良発生率が要求されるため、上述の火花発生に伴う金属粒の素子表面への付着が大きな問題となる。
そこで本発明の目的は、パッケージを構成する基体に金属蓋を溶接する工程で火花が発生したとしても素子表面に金属粒が付着することのない弾性表面波装置、並びにその製造方法を提供することである。
In particular, surface acoustic wave filters and surface acoustic wave resonators used in in-vehicle electronic devices such as remote keyless entry systems and tire pressure monitoring systems and mobile phones require a very low defect occurrence rate. The adhesion of metal particles to the element surface accompanying the generation becomes a big problem.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a surface acoustic wave device in which metal particles do not adhere to the element surface even if a spark is generated in the process of welding a metal lid to a substrate constituting a package, and a method for manufacturing the same. It is.

本発明に係る弾性表面波装置は、密閉構造を有するパッケージ(2)の内部に弾性表面波素子(1)を収容してなり、パッケージ(2)は、弾性表面波素子(1)を収容するためのキャビティ(20)が凹設された基体(21)と、前記キャビティ(20)を覆って基体(21)の開口縁に溶接固定された金属蓋(22)とから構成される。
前記パッケージ(2)を構成する基体(21)と金属蓋(22)の間には、両者間の溶接固定部の内側に沿って、弾性表面波素子(1)の収容空間の全周を包囲する樹脂壁(5)が介在し、基体(21)及び金属蓋(22)と密着している。
The surface acoustic wave device according to the present invention accommodates a surface acoustic wave element (1) inside a package (2) having a sealed structure, and the package (2) accommodates the surface acoustic wave element (1). A base body (21) having a cavity (20) for recessing and a metal lid (22) covering the cavity (20) and welded to the opening edge of the base body (21).
Between the base (21) and the metal lid (22) constituting the package (2), the entire circumference of the accommodation space of the surface acoustic wave element (1) is surrounded along the inner side of the weld fixing part between the two. The resin wall (5) is interposed, and is in close contact with the base (21) and the metal lid (22).

具体的構成において、パッケージ(2)を構成する基体(21)はセラミック製であって、少なくとも金属蓋(22)が溶接固定されるべき開口縁は金属層によって覆われており、該金属層に対して金属蓋(22)がシーム溶接されている。   In a specific configuration, the base body (21) constituting the package (2) is made of ceramic, and at least an opening edge to which the metal lid (22) is to be fixed by welding is covered with a metal layer. On the other hand, the metal lid (22) is seam welded.

上記本発明の弾性表面波装置は、以下の製造方法によって製造される。
先ず、第1工程では、弾性表面波素子(1)と、弾性表面波素子(1)を収容するためのキャビティ(20)が凹設された基体(21)と、前記キャビティ(20)を覆って基体(21)の開口縁に溶接固定されるべき金属蓋(22)とを作製する。
第2工程では、基体(21)のキャビティ(20)の底面に弾性表面波素子(1)を設置する。
第3工程では、基体(21)の表面に、金属蓋(22)が溶接されるべき溶接領域の内側に沿って、キャビティ(20)の全周を包囲する樹脂壁(5)を形成する。
第4工程では、基体(21)の前記溶接領域と樹脂壁(5)の表面に金属蓋(22)の外周部を密着せしめて、基体(21)上に金属蓋(22)を設置する。
最後に第5工程では、基体(21)の前記溶接領域に金属蓋(22)の外周部をシーム溶接する。
The surface acoustic wave device of the present invention is manufactured by the following manufacturing method.
First, in the first step, the surface acoustic wave element (1), a base body (21) in which a cavity (20) for accommodating the surface acoustic wave element (1) is recessed, and the cavity (20) are covered. Thus, a metal lid (22) to be welded and fixed to the opening edge of the base body (21) is produced.
In the second step, the surface acoustic wave element (1) is placed on the bottom surface of the cavity (20) of the base body (21).
In the third step, a resin wall (5) surrounding the entire circumference of the cavity (20) is formed on the surface of the base body (21) along the inner side of the welding region where the metal lid (22) is to be welded.
In the fourth step, the outer peripheral portion of the metal lid (22) is brought into close contact with the surface of the welding region of the base (21) and the resin wall (5), and the metal lid (22) is set on the base (21).
Finally, in the fifth step, the outer peripheral portion of the metal lid (22) is seam welded to the welding region of the base (21).

上記弾性表面波装置の製造方法によれば、第4工程にて基体(21)上に金属蓋(22)を設置することにより、樹脂壁(5)が基体(21)及び金属蓋(22)に密着する。従って、第5工程にて、基体(21)に金属蓋(22)をシーム溶接する際、火花が発生したとしても、溶接部の内側に沿って樹脂壁(5)が形成されているため、溶融金属粒は樹脂壁(5)によって受け止められ、弾性表面波素子(1)の表面に付着することはない。   According to the method for manufacturing the surface acoustic wave device, the resin wall (5) is placed on the base (21) and the metal lid (22) by installing the metal lid (22) on the base (21) in the fourth step. Close contact with. Therefore, even when a spark is generated when the metal lid (22) is seam welded to the base (21) in the fifth step, the resin wall (5) is formed along the inside of the welded portion. The molten metal particles are received by the resin wall (5) and do not adhere to the surface of the surface acoustic wave element (1).

例えば、樹脂壁(5)は熱可塑性樹脂からなり、前記第3工程では、基体(21)の前記溶接領域よりも樹脂壁(5)の表面が突出する高さに樹脂壁(5)を形成し、前記第4工程では、基体(21)に金属蓋(22)を設置した状態で樹脂壁(5)に加熱処理を施す。これによって樹脂壁(5)は一旦溶融し、樹脂壁(5)の表面が基体(21)の前記溶接領域と同一高さに揃って、金属蓋(22)の裏面に密着し、その状態で固化することになる。
この結果、第5工程における溶接に伴って発生する溶融金属粒の飛散が樹脂壁(5)によって完全に阻止される。
For example, the resin wall (5) is made of a thermoplastic resin, and in the third step, the resin wall (5) is formed at a height at which the surface of the resin wall (5) protrudes from the welding region of the base (21). In the fourth step, the resin wall (5) is heat-treated with the metal lid (22) installed on the base (21). As a result, the resin wall (5) is once melted, and the surface of the resin wall (5) is flush with the welding region of the base (21) and is in close contact with the back surface of the metal lid (22). It will solidify.
As a result, the scattering of the molten metal particles generated with the welding in the fifth step is completely prevented by the resin wall (5).

本発明に係る弾性表面波装置及びその製造方法によれば、基体に金属蓋を溶接する工程で火花が発生したとしても、素子表面に金属粒が付着することはないので、高い歩留まりが得られると共に、市場における不良発生率が大幅に低減される。   According to the surface acoustic wave device and the method for manufacturing the same according to the present invention, even if a spark is generated in the process of welding the metal lid to the base body, metal particles do not adhere to the element surface, so that a high yield can be obtained. At the same time, the incidence of defects in the market is greatly reduced.

以下、本発明の実施形態につき、図面に沿って具体的に説明する。
本発明に係る弾性表面波装置は、図1に示す如く、直方体状のセラミック基体(21)の開口縁に金属蓋(22)をシーム溶接してなる密閉構造のパッケージ(2)を具え、該パッケージ(2)の内部に弾性表面波素子(1)を収容して構成されている。
Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.
As shown in FIG. 1, a surface acoustic wave device according to the present invention comprises a package (2) having a sealed structure formed by seam welding a metal lid (22) to an opening edge of a rectangular parallelepiped ceramic base (21). The surface acoustic wave element (1) is accommodated in the package (2).

図2に示す如く、セラミック基体(21)の表面には弾性表面波素子(1)を収容するためのキャビティ(20)が凹設され、該キャビティ(20)の底面に弾性表面波素子(1)が設置され、該弾性表面波素子(1)の各電極(図示省略)はセラミック基体(21)に設けられたパッド部(図示省略)とワイヤー(3)を介して接続されている。
セラミック基体(21)の開口縁には、厚さが例えば200〜300μmのシームリング(23)を介して、金属蓋(22)がシーム溶接されている。又、セラミック基体(21)の開口縁には、シームリング(23)の内周面に沿って、弾性表面波素子(1)の収容空間の全周を包囲するエポキシ系若しくはシリコン系の樹脂壁(5)が形成され、その表面が金属蓋(22)の裏面に密着している。
As shown in FIG. 2, a cavity (20) for accommodating the surface acoustic wave element (1) is recessed on the surface of the ceramic substrate (21), and the surface acoustic wave element (1) is formed on the bottom surface of the cavity (20). ), And each electrode (not shown) of the surface acoustic wave element (1) is connected to a pad portion (not shown) provided on the ceramic substrate (21) via a wire (3).
A metal lid (22) is seam welded to the opening edge of the ceramic substrate (21) through a seam ring (23) having a thickness of, for example, 200 to 300 μm. In addition, an epoxy or silicon resin wall surrounding the entire circumference of the accommodation space of the surface acoustic wave element (1) along the inner peripheral surface of the seam ring (23) is provided at the opening edge of the ceramic base (21). (5) is formed, and the surface thereof is in close contact with the back surface of the metal lid (22).

図3は、上記本発明の弾性表面波装置の製造工程を示している。
先ず図3(a)の如く、表面にキャビティ(20)が凹設されると共に該キャビティ(20)を包囲してシームリング(23)が固定されているセラミック基体(21)を用意し、該キャビティ(20)の底面に、電極形成面(14)を上に向けて弾性表面波素子(1)を設置する。
次に図3(b)の如く、弾性表面波素子(1)の各電極とセラミック基体(21)の各パッド部とをワイヤー(3)によって互いに接続した後、図3(c)の如くセラミック基体(21)の開口縁上に、シームリング(23)の内周面に沿って、熱可塑性の樹脂を充填し、弾性表面波素子(1)の収容空間の全周を包囲する樹脂壁(5)を形成する。ここで、樹脂壁(5)は、その表面がシームリング(23)の表面よりも僅かに突出する高さに形成する。
FIG. 3 shows a manufacturing process of the surface acoustic wave device of the present invention.
First, as shown in FIG. 3 (a), a ceramic substrate (21) having a cavity (20) recessed on the surface and surrounding the cavity (20) to which a seam ring (23) is fixed is prepared. The surface acoustic wave element (1) is placed on the bottom surface of the cavity (20) with the electrode formation surface (14) facing upward.
Next, as shown in FIG. 3 (b), the electrodes of the surface acoustic wave element (1) and the pads of the ceramic substrate (21) are connected to each other by wires (3), and then the ceramic as shown in FIG. 3 (c). A resin wall is filled on the opening edge of the base body (21) along the inner peripheral surface of the seam ring (23) to surround the entire circumference of the accommodation space of the surface acoustic wave element (1). 5) is formed. Here, the resin wall (5) is formed at a height such that its surface slightly protrudes from the surface of the seam ring (23).

その後、図3(d)の如く、樹脂壁(5)の表面に金属蓋(22)を押し付けて、シームリング(23)上に金属蓋(22)を設置し、樹脂壁(5)に加熱処理を施す。この結果、樹脂壁(5)は一旦溶融し、その表面が金属蓋(22)の裏面に密着した状態で固化することになる。
そして最後に、図3(e)の如くセラミック基体(21)の開口縁にシームリング(23)を介して金属蓋(22)をシーム溶接し、パッケージ(2)の内部を封止する。
Thereafter, as shown in FIG. 3 (d), the metal lid (22) is pressed against the surface of the resin wall (5), the metal lid (22) is placed on the seam ring (23), and the resin wall (5) is heated. Apply processing. As a result, the resin wall (5) is once melted and solidified in a state where the surface thereof is in close contact with the back surface of the metal lid (22).
Finally, as shown in FIG. 3 (e), the metal lid (22) is seam welded to the opening edge of the ceramic substrate (21) via the seam ring (23) to seal the inside of the package (2).

上記製造工程においては、図3(e)の如くセラミック基体(21)の開口縁にシームリング(23)を介して金属蓋(22)をシーム溶接する際、火花が発生して溶融金属粒が飛散したとしても、該金属粒は樹脂壁(5)によって受け止められるので、弾性表面波素子(1)の表面に付着することはない。
従って、本発明の弾性表面波装置によれば、IDT(12)を構成する一対の電極の間に金属粒の付着による短絡が発生する虞はなく、従来よりも高い歩留まりが得られる。
In the above manufacturing process, when the metal lid (22) is seam welded to the opening edge of the ceramic substrate (21) via the seam ring (23) as shown in FIG. Even if scattered, the metal particles are received by the resin wall (5), and therefore do not adhere to the surface of the surface acoustic wave element (1).
Therefore, according to the surface acoustic wave device of the present invention, there is no possibility that a short circuit occurs due to adhesion of metal particles between the pair of electrodes constituting the IDT (12), and a higher yield than the conventional one can be obtained.

本発明に係る弾性表面波装置において、セラミック基体(21)に金属蓋(22)を溶接固定する方法としては、シームリングを用いないダイレクトシーム溶接を採用することも可能であって、ダイレクトシーム溶接を採用した製造方法の一例を図4(a)〜(e)に示す。
図4(a)に示す如く、表面にキャビティ(20)が凹設されると共に該キャビティ(20)を包囲する周壁部(25)が形成されているセラミック基体(21)を用意し、該セラミック基体(21)の周壁部(25)の表面に、金属メッキ層を形成する。そして、キャビティ(20)の底面に、電極形成面(14)を上に向けて弾性表面波素子(1)を設置する。
次に図4(b)の如く、弾性表面波素子(1)の各電極とセラミック基体(21)の各パッド部とをワイヤー(3)によって互いに接続した後、図4(c)の如くセラミック基体(21)の開口縁上に、周壁部(25)の内周面に沿って、熱可塑性の樹脂を充填し、弾性表面波素子(1)の収容空間の全周を包囲する樹脂壁(5)を形成する。
In the surface acoustic wave device according to the present invention, as a method of welding and fixing the metal lid (22) to the ceramic substrate (21), it is possible to employ direct seam welding without using a seam ring, and direct seam welding. An example of the manufacturing method which employ | adopted is shown to Fig.4 (a)-(e).
As shown in FIG. 4 (a), a ceramic substrate (21) having a cavity (20) formed on the surface and a peripheral wall portion (25) surrounding the cavity (20) is prepared. A metal plating layer is formed on the surface of the peripheral wall portion (25) of the base body (21). Then, the surface acoustic wave element (1) is installed on the bottom surface of the cavity (20) with the electrode formation surface (14) facing upward.
Next, as shown in FIG. 4 (b), each electrode of the surface acoustic wave element (1) and each pad portion of the ceramic substrate (21) are connected to each other by a wire (3), and then the ceramic as shown in FIG. 4 (c). A resin wall is filled on the opening edge of the base body (21) along the inner peripheral surface of the peripheral wall portion (25) to surround the entire circumference of the accommodation space of the surface acoustic wave element (1). 5) is formed.

その後、図4(d)の如く、樹脂壁(5)の表面に金属蓋(22)を押し付けて、セラミック基体(21)の周壁部(25)上に金属蓋(22)を設置し、樹脂壁(5)に加熱処理を施す。この結果、樹脂壁(5)は一旦溶融し、その表面が金属蓋(22)の裏面に密着した状態で固化することになる。
そして最後に、図4(e)の如くセラミック基体(21)の周壁部(25)に金属蓋(22)をシーム溶接し、パッケージ(2)の内部を封止する。
After that, as shown in FIG. 4 (d), the metal lid (22) is pressed against the surface of the resin wall (5), and the metal lid (22) is placed on the peripheral wall portion (25) of the ceramic base (21). The wall (5) is heated. As a result, the resin wall (5) is once melted and solidified in a state where the surface thereof is in close contact with the back surface of the metal lid (22).
Finally, as shown in FIG. 4E, a metal lid (22) is seam welded to the peripheral wall portion (25) of the ceramic substrate (21) to seal the inside of the package (2).

上記製造工程においては、図4(e)の如くセラミック基体(21)の周壁部(25)に金属蓋(22)をシーム溶接する際、火花が発生して溶融金属粒が飛散したとしても、該金属粒は樹脂壁(5)によって受け止められるので、弾性表面波素子(1)の表面に付着することはない。   In the above manufacturing process, even when a metal lid (22) is seam welded to the peripheral wall (25) of the ceramic substrate (21) as shown in FIG. Since the metal particles are received by the resin wall (5), they do not adhere to the surface of the surface acoustic wave element (1).

尚、本発明の各部構成は上記実施の形態に限らず、特許請求の範囲に記載の技術的範囲内で種々の変形が可能である。例えば樹脂壁(5)は、熱可塑性樹脂に加熱処理を施して作製したものに限らず、弾性を有する樹脂成型品によって形成し、その弾性復帰力によって金属蓋(22)の裏面に圧着せしめる構成も採用可能である。   In addition, each part structure of this invention is not restricted to the said embodiment, A various deformation | transformation is possible within the technical scope as described in a claim. For example, the resin wall (5) is not limited to one produced by heat-treating a thermoplastic resin, and is formed by a resin molded product having elasticity, and is configured to be crimped to the back surface of the metal lid (22) by its elastic restoring force. Can also be adopted.

本発明に係る弾性表面波装置の金属蓋を外した状態の斜視図である。It is a perspective view in the state where the metal lid of the surface acoustic wave device concerning the present invention was removed. 本発明に係る弾性表面波装置の断面図である。1 is a cross-sectional view of a surface acoustic wave device according to the present invention. 本発明に係る弾性表面波装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the surface acoustic wave apparatus which concerns on this invention. 本発明に係る弾性表面波装置の他の製造方法を示す工程図である。It is process drawing which shows the other manufacturing method of the surface acoustic wave apparatus which concerns on this invention. 従来の弾性表面波装置の金属蓋を外した状態の斜視図である。It is a perspective view of the state which removed the metal cover of the conventional surface acoustic wave apparatus. 弾性表面波素子の拡大平面図である。It is an enlarged plan view of a surface acoustic wave element. 従来の弾性表面波装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the conventional surface acoustic wave apparatus.

符号の説明Explanation of symbols

(1) 弾性表面波素子
(2) パッケージ
(20) キャビティ
(21) セラミック基体
(22) 金属蓋
(23) シームリング
(25) 周壁部
(3) ワイヤー
(5) 樹脂壁
(1) Surface acoustic wave device
(2) Package
(20) Cavity
(21) Ceramic substrate
(22) Metal lid
(23) Seam ring
(25) Perimeter wall
(3) Wire
(5) Resin wall

Claims (5)

密閉構造を有するパッケージ(2)の内部に弾性表面波素子(1)を収容してなり、パッケージ(2)は、弾性表面波素子(1)を収容するためのキャビティ(20)が凹設された基体(21)と、前記キャビティ(20)を覆って基体(21)の開口縁に溶接固定された金属蓋(22)とから構成される弾性表面波装置において、前記パッケージ(2)を構成する基体(21)と金属蓋(22)の間には、両者間の溶接固定部の内側に沿って、弾性表面波素子(1)の収容空間の全周を包囲する樹脂壁(5)が介在し、基体(21)及び金属蓋(22)と密着していることを特徴とする弾性表面波装置。   The surface acoustic wave element (1) is accommodated in the package (2) having a sealed structure, and the package (2) has a cavity (20) for accommodating the surface acoustic wave element (1). The surface acoustic wave device comprises a substrate (21) and a metal lid (22) welded and fixed to the opening edge of the substrate (21) so as to cover the cavity (20). Between the base body (21) and the metal lid (22), there is a resin wall (5) surrounding the entire circumference of the accommodation space of the surface acoustic wave element (1) along the inside of the weld fixing part between them. A surface acoustic wave device that is interposed and is in close contact with a substrate (21) and a metal lid (22). パッケージ(2)を構成する基体(21)はセラミック製であって、少なくとも金属蓋(22)が溶接固定されるべき開口縁は金属層によって覆われており、該金属層に対して金属蓋(22)がシーム溶接されている請求項1に記載の弾性表面波装置。   The substrate (21) constituting the package (2) is made of ceramic, and at least the opening edge to which the metal lid (22) is to be fixed by welding is covered with a metal layer. The surface acoustic wave device according to claim 1, wherein 22) is seam welded. 密閉構造を有するパッケージ(2)の内部に弾性表面波素子(1)を収容してなる弾性表面波装置の製造方法において、
弾性表面波素子(1)と、弾性表面波素子(1)を収容するためのキャビティ(20)が凹設された基体(21)と、前記キャビティ(20)を覆って基体(21)の開口縁に溶接固定されるべき金属蓋(22)とを作製する第1工程と、
基体(21)のキャビティ(20)の底面に弾性表面波素子(1)を設置する第2工程と、
基体(21)の表面に、金属蓋(22)が溶接されるべき溶接領域の内側に沿って、キャビティ(20)の全周を包囲する樹脂壁(5)を形成する第3工程と、
基体(21)の前記溶接領域と樹脂壁(5)の表面に金属蓋(22)の外周部を密着せしめて、基体(21)上に金属蓋(22)を設置する第4工程と、
基体(21)の前記溶接領域に金属蓋(22)の外周部をシーム溶接する第5工程
とを有することを特徴とする弾性表面波装置の製造方法。
In a method for manufacturing a surface acoustic wave device in which a surface acoustic wave element (1) is housed inside a package (2) having a sealed structure,
A surface acoustic wave element (1), a base body (21) in which a cavity (20) for accommodating the surface acoustic wave element (1) is recessed, and an opening of the base body (21) covering the cavity (20) A first step of producing a metal lid (22) to be welded to the edge;
A second step of installing the surface acoustic wave element (1) on the bottom surface of the cavity (20) of the substrate (21);
A third step of forming, on the surface of the base body (21), a resin wall (5) surrounding the entire circumference of the cavity (20) along the inner side of the welding region to which the metal lid (22) is to be welded;
A fourth step of placing the metal lid (22) on the base (21) by bringing the outer periphery of the metal lid (22) into close contact with the weld region of the base (21) and the surface of the resin wall (5);
And a fifth step of seam welding the outer peripheral portion of the metal lid (22) to the weld region of the base (21).
前記第3工程では、基体(21)の前記溶接領域よりも樹脂壁(5)の表面が突出する高さに樹脂壁(5)を形成し、前記第4工程では、金属蓋(22)の設置によって樹脂壁(5)の表面を基体(21)の前記溶接領域と同一高さに揃える請求項3に記載の弾性表面波装置の製造方法。   In the third step, the resin wall (5) is formed at a height at which the surface of the resin wall (5) protrudes from the welding region of the base (21). In the fourth step, the metal lid (22) is formed. The method for manufacturing a surface acoustic wave device according to claim 3, wherein the surface of the resin wall (5) is arranged at the same height as the welding region of the substrate (21) by installation. 樹脂壁(5)は熱可塑性樹脂からなり、前記第4工程では、樹脂壁(5)を加熱処理によって溶融せしめる請求項4に記載の弾性表面波装置の製造方法。
The method of manufacturing a surface acoustic wave device according to claim 4, wherein the resin wall (5) is made of a thermoplastic resin, and in the fourth step, the resin wall (5) is melted by heat treatment.
JP2004040863A 2004-02-18 2004-02-18 Surface acoustic wave device and manufacturing method thereof Pending JP2005236475A (en)

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