JP2005222040A - Ｓｉ−成分を含むフォトレジスト組成物 - Google Patents

Ｓｉ−成分を含むフォトレジスト組成物 Download PDF

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Publication number
JP2005222040A
JP2005222040A JP2004380229A JP2004380229A JP2005222040A JP 2005222040 A JP2005222040 A JP 2005222040A JP 2004380229 A JP2004380229 A JP 2004380229A JP 2004380229 A JP2004380229 A JP 2004380229A JP 2005222040 A JP2005222040 A JP 2005222040A
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JP
Japan
Prior art keywords
photoresist composition
photoresist
component
composition
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004380229A
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English (en)
Japanese (ja)
Other versions
JP2005222040A5 (enExample
Inventor
F Cameron James
エフ キャメロン ジェームズ
Sheri L Ablaza
エル アブラザ シェリ
Suzuki Yasuhiro
スズキ ヤスヒロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2005222040A publication Critical patent/JP2005222040A/ja
Publication of JP2005222040A5 publication Critical patent/JP2005222040A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004380229A 2003-12-30 2004-12-28 Ｓｉ−成分を含むフォトレジスト組成物 Pending JP2005222040A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53348803P 2003-12-30 2003-12-30

Publications (2)

Publication Number Publication Date
JP2005222040A true JP2005222040A (ja) 2005-08-18
JP2005222040A5 JP2005222040A5 (enExample) 2008-02-21

Family

ID=34997671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004380229A Pending JP2005222040A (ja) 2003-12-30 2004-12-28 Ｓｉ−成分を含むフォトレジスト組成物

Country Status (2)

Country Link
US (1) US20050244745A1 (enExample)
JP (1) JP2005222040A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008050342A (ja) * 2006-07-26 2008-03-06 Central Glass Co Ltd Ｎ−（ビシクロ［２，２，１］ヘプト−５−エン−２−イルメチル）−１，１，１−トリフルオロメタンスルホンアミドの製造方法
WO2008093629A1 (ja) * 2007-02-01 2008-08-07 Tokyo Ohka Kogyo Co., Ltd. 液晶表示素子用平坦化絶縁膜形成用組成物および液晶表示素子用平坦化絶縁膜の製造方法
WO2015064509A1 (ja) * 2013-11-01 2015-05-07 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
JP2022059575A (ja) * 2020-10-01 2022-04-13 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004354417A (ja) * 2003-05-27 2004-12-16 Shin Etsu Chem Co Ltd ポジ型レジスト材料並びにこれを用いたパターン形成方法
US7318992B2 (en) * 2004-03-31 2008-01-15 Tokyo Ohka Kogyo Co., Ltd. Lift-off positive resist composition
KR100640643B1 (ko) * 2005-06-04 2006-10-31 삼성전자주식회사 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
JP4687898B2 (ja) * 2006-03-14 2011-05-25 信越化学工業株式会社 含フッ素ケイ素化合物、シリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
JP5708522B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5726632B2 (ja) * 2011-05-19 2015-06-03 メルクパフォーマンスマテリアルズＩｐ合同会社 感光性シロキサン樹脂組成物
US12099298B2 (en) * 2020-10-01 2024-09-24 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11237743A (ja) * 1998-02-20 1999-08-31 Fuji Photo Film Co Ltd 平版印刷版製版方法および平版印刷版用原版
JP2001215705A (ja) * 2000-02-04 2001-08-10 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2001330956A (ja) * 2000-05-22 2001-11-30 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002131915A (ja) * 2000-10-26 2002-05-09 Fuji Photo Film Co Ltd 感放射線性樹脂組成物
US20030180657A1 (en) * 2001-12-31 2003-09-25 Shipley Company, L.L.C. Photoresist compositions
JP2006091906A (ja) * 2003-10-07 2006-04-06 Hitachi Chem Co Ltd 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2006119660A (ja) * 2003-10-07 2006-05-11 Hitachi Chem Co Ltd 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087064A (en) * 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
US7261992B2 (en) * 2000-12-21 2007-08-28 International Business Machines Corporation Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11237743A (ja) * 1998-02-20 1999-08-31 Fuji Photo Film Co Ltd 平版印刷版製版方法および平版印刷版用原版
JP2001215705A (ja) * 2000-02-04 2001-08-10 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2001330956A (ja) * 2000-05-22 2001-11-30 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002131915A (ja) * 2000-10-26 2002-05-09 Fuji Photo Film Co Ltd 感放射線性樹脂組成物
US20030180657A1 (en) * 2001-12-31 2003-09-25 Shipley Company, L.L.C. Photoresist compositions
JP2006091906A (ja) * 2003-10-07 2006-04-06 Hitachi Chem Co Ltd 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2006119660A (ja) * 2003-10-07 2006-05-11 Hitachi Chem Co Ltd 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008050342A (ja) * 2006-07-26 2008-03-06 Central Glass Co Ltd Ｎ−（ビシクロ［２，２，１］ヘプト−５−エン−２−イルメチル）−１，１，１−トリフルオロメタンスルホンアミドの製造方法
WO2008093629A1 (ja) * 2007-02-01 2008-08-07 Tokyo Ohka Kogyo Co., Ltd. 液晶表示素子用平坦化絶縁膜形成用組成物および液晶表示素子用平坦化絶縁膜の製造方法
JP2008191270A (ja) * 2007-02-01 2008-08-21 Tokyo Ohka Kogyo Co Ltd 液晶表示素子用平坦化絶縁膜形成用組成物および液晶表示素子用平坦化絶縁膜の製造方法
WO2015064509A1 (ja) * 2013-11-01 2015-05-07 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
JP2015129908A (ja) * 2013-11-01 2015-07-16 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
CN105706000A (zh) * 2013-11-01 2016-06-22 中央硝子株式会社 正型感光性树脂组合物、使用了它的膜的制造方法以及电子部件
US9778569B2 (en) 2013-11-01 2017-10-03 Central Glass Company, Limited Positive photosensitive resin composition, method for producing film using same, and electronic component
CN105706000B (zh) * 2013-11-01 2019-09-27 中央硝子株式会社 正型感光性树脂组合物、使用了它的膜的制造方法以及电子部件
JP2022059575A (ja) * 2020-10-01 2022-04-13 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP7774409B2 (ja) 2020-10-01 2025-11-21 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
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