JP2005209970A - Heater of element to be coated with resist and method of monitoring the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heater to treat material coated with a resist which can detect rapidly the change of an atmosphere in a heating part to be treated when the material coated with the resist is heat treated, and to provide a method of monitoring the same. <P>SOLUTION: The heater of the material coated with the resist includes a heating unit 1a which disposes and heats a semiconductor wafer 4 coated with the resist in an interior, a purge pump 7 which ejects gas 8a around the heated semiconductor wafer 4 to the exterior of the heating unit 1a, a gas discharge flowmeter 11 for measuring the gas discharge flow rate of the gas 8a to be ejected, and a data logger 12 which outputs as data a measured value measured with the gas discharge flowmeter 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a heating apparatus for a resist coated body and a monitoring method thereof.

In general, a fine pattern of a semiconductor device is formed by applying a resist to a semiconductor wafer as a resist application body and performing a plurality of processing steps such as exposure and development.
In recent years, chemically amplified resists have been used as high-sensitivity resists in the remarkably miniaturization of patterns. When this chemically amplified resist is used, the semiconductor wafer is subjected to heat treatment in order to stop the chemical reaction after exposure at a predetermined time.

  Since the heating temperature affects the progress of the chemical reaction, the accuracy of the pattern dimensions (pattern line width) also depends significantly on the heating temperature. FIG. 10 shows a semiconductor wafer heating apparatus after resist coating.

  As shown in FIG. 10, the semiconductor wafer heating apparatus 1 includes a heating unit 1a for heating the semiconductor wafer 4, a purge pump 7 for discharging the gas in the heating unit 1a out of the heating unit 1a, and a purge Flow meter 8 that measures the flow rate of gas 8a fed from pump 7 as an input value, filter 9 for filtering gas 8a, and manual damper 10 that adjusts the flow rate of gas 8a discharged from heating unit 1a And have. As shown in FIG. 10, the purge pump 7, the flow meter 8 and the filter 9 are provided on the side where the gas 8a is fed into the heating unit 1a, and the manual damper 10 is provided with the gas 8a from the heating unit 1a. Is provided in the discharge pipe on the side of discharging.

  The heating unit 1a maintains a heat plate 2 for heating the semiconductor wafer 4, a plurality of temperature sensors 3 provided on the heat plate 2, and the semiconductor wafer 4 and the heat plate 2 in a non-contact state. A guide ring 5 for preventing abnormal heat treatment due to particles on the back surface of the wafer 4 and a hot plate cover 6 for sealing the periphery of the hot plate 2 and the semiconductor wafer 4 are provided. Note that the hot plate 2 and the semiconductor wafer 4 are arranged with an interval of 0.1 mm, for example.

  In order to heat-treat the semiconductor wafer 4 using the heating apparatus 1 having such a configuration and stop the chemical reaction after the exposure at a predetermined time, first, a resist is applied on the guide ring 5. While the semiconductor wafer 4 is placed and the hot plate cover 6 is closed (as shown in FIG. 10), the temperature of the hot plate 2 is monitored by the temperature sensor 3 and the semiconductor wafer 4 is heated by the hot plate 2. (Proximity heating).

  At this time, the purge pump 7 sends the gas 8a that has passed through the flow meter 8 and the filter 9 into the heating unit 1a, and the atmosphere and the resist reaction product in the heating unit 1a are supplied from the heating unit 1a to the manual damper. 10 is sucked and exhausted to the outside.

As described above, the semiconductor wafer 4 after the resist application is subjected to heat treatment, and the chemical reaction is stopped at a predetermined time.
For example, in Patent Document 1, an exhaust port is provided at the periphery of the semiconductor wafer, and the exhaust is performed from the upper side to the lower side of the semiconductor wafer while considering the influence of the downflow in the clean room. A technique for preventing the gas to pass through the gap between the semiconductor wafer and the heating plate is described. This prevents air fluctuations in the gap between the semiconductor wafer and the heating plate, prevents variations in the temperature distribution of the semiconductor wafer, and makes the resist film thickness highly uniform and the pattern dimensions uniform. Yes.
JP-A-4-127516

  However, since the heating device 1 shown in FIG. 10 is not provided with a device for measuring and monitoring the exhaust flow rate on the exhaust side, accumulation of resist reaction products in the exhaust pipe, abnormality of the purge pump 7, etc. When it occurred, the change in the atmosphere in the heating unit 1a could not be detected quickly.

  As a result, the temperature in the heating unit 1a varies, and the value of the pattern dimension after development varies greatly as shown in FIG. 11, that is, exceeds the range of the management standard. As a result, the semiconductor device The yield may be reduced.

  Therefore, in order to stabilize the yield of the semiconductor device and to stably operate the heating unit 1a, a measuring instrument that can measure the exhaust flow rate of the gas 8a from the heating unit 1a and a system that can constantly monitor the exhaust flow rate are required. Become. For example, even if only a measuring instrument for measuring the exhaust flow rate from the heating unit 1a is incorporated, an abnormality in the exhaust flow rate of the gas 8a cannot be detected quickly, and as a result, the yield reduction of the semiconductor device cannot be prevented. .

  Therefore, the present invention solves such a problem, and when applying a heat treatment to a resist coated body, a resist coating body heating apparatus capable of quickly detecting a change in the atmosphere in the heating section to be treated. And to provide a monitoring method thereof.

  In order to solve the above-mentioned problems, the invention according to claim 1 is characterized in that a resist coating object to which a resist is applied is placed inside and heated, and the gas around the heated resist application object is Means for discharging to the outside of the heating means, measuring means for measuring the exhaust flow rate of the exhausted gas, and data processing means for outputting the measurement value measured by the measuring means as data.

  According to such a configuration, the state of the gas exhaust flow rate can be monitored based on the data output from the data processing means, and the change in the atmosphere inside the heating means can be detected quickly.

  According to a second aspect of the present invention, in the apparatus for heating a resist coated body according to the first aspect, the means for determining an abnormality in the gas exhaust flow rate based on the data output by the data processing means, and the exhaust flow rate is abnormal In this case, there is provided an alarm output means for outputting an alarm and a stopping means for stopping the heating means for the resist coated body when the abnormality is present.

  According to such a configuration, there is provided means for determining an abnormality in the gas exhaust flow rate based on data output from the data processing means, and an alarm output means for outputting an alarm when the exhaust flow rate is abnormal. Thus, it is possible to promptly notify the operator of the abnormality, and it is possible to quickly detect the change in the atmosphere inside the heating means. In addition, when there is an abnormality in the exhaust gas flow rate, there is a stop means for stopping the heating means for the resist application object, so that the resist application object is subjected to heat treatment in a situation where the gas exhaust flow rate is abnormal. Can be prevented.

  According to a third aspect of the present invention, in the heating apparatus for a resist coated body according to the second aspect, an exhaust flow rate adjusting means for automatically adjusting the exhaust flow rate when the exhaust flow rate is a value within a preset allowable abnormality range. It is what has.

  According to such a configuration, there is an abnormality in the gas exhaust flow rate by including the exhaust flow rate adjusting means for automatically adjusting the exhaust flow rate when the exhaust flow rate is a value within a preset allowable abnormality range. In this case, the exhaust flow rate adjusting means can automatically adjust the abnormal exhaust flow rate to a normal exhaust flow rate, and can quickly cope with the abnormality. Therefore, it is possible to prevent the resist-coated body from being subjected to heat treatment under a situation where an abnormality occurs in the gas exhaust flow rate.

  According to a fourth aspect of the present invention, in the resist coating object heating apparatus according to the first aspect, the abnormality of the exhaust flow rate of the gas discharged from the heating means is determined based on the data output from the data processing means, When the exhaust flow rate is abnormal, an alarm is output, and when the abnormality is present, the heating means is stopped.

  In this case, in the heating apparatus for the resist coated body according to claim 1, an abnormality in the exhaust flow rate of the gas discharged from the heating unit is determined based on the data output from the data processing unit, and the exhaust flow rate is set. Since an alarm is output when there is an abnormality, it is possible to quickly detect changes in the atmosphere inside the heating means, and to monitor the resist coated body. Further, by stopping the heating means when there is an abnormality, it is possible to prevent the resist coated body from being subjected to a heat treatment under a situation where an abnormality occurs in the gas exhaust flow rate. .

  As described above, according to the present invention, the inside of the heating unit includes the measuring unit that measures the exhaust flow rate of the discharged gas and the data processing unit that outputs the measurement value measured by the measuring unit as data. It is possible to quickly detect changes in the atmosphere. Thereby, when abnormality arises in the exhaust flow volume of gas, it can respond quickly and can improve the yield of a resist coated body.

Hereinafter, Embodiments 1 to 3 of the present invention will be described with reference to FIGS. In addition, the same code | symbol is attached | subjected to the thing similar to what was demonstrated using FIG. 10, and the detailed description is abbreviate | omitted.
(Embodiment 1)
In the first embodiment, the monitoring of the exhaust flow rate of the gas 8a discharged from the heating unit 1a will be mainly described.

  As shown in FIG. 1, a heating device 20 for a semiconductor wafer 4 as a resist coated body includes a heating unit 1a as a heating unit that heats the semiconductor wafer 4 disposed therein, and the semiconductor wafer 4 in the heating unit 1a. A purge pump 7 as means for discharging the gas around the heating unit 1a, a flow meter 8 for measuring the flow rate of the gas 8a, a filter 9 for filtering the gas 8a, and a flow rate of the discharged gas 8a A manual damper 10 that adjusts the exhaust gas, an exhaust flow meter 11 that is provided downstream of the manual damper 10 and that measures the exhaust flow rate of the discharged gas 8a, and a measured value that is measured by the exhaust flow meter 11 And a data logger 12 as data processing means for outputting the data as data. In the following, a case where the measurement value measured by the exhaust flow meter 11 is output as analog data will be described, but the measurement value may be output as digital data.

  In such a configuration, the semiconductor wafer 4 in a state where a resist is applied by a resist coating apparatus (not shown) in the previous step and further subjected to an exposure process is conveyed into the heating unit 1a in the heating apparatus 20. The

  The transferred semiconductor wafer 4 is placed on the guide ring 5, and the hot plate cover 6 is closed to seal the periphery of the hot plate 2 and the semiconductor wafer 4 as shown in FIG. The semiconductor wafer 4 is subjected to heat treatment (proximity heating) while the temperature sensor 3 monitors the temperature of the hot plate 2.

  When the heat treatment is started, a gas 8a is sent into the heating unit 1a by the purge pump 7, and the gas 8a and the resist reaction product around the semiconductor wafer 4 are sucked outside from the heating unit 1a through the manual damper 10. Exhaust.

  At this time, the exhaust flow rate of the gas 8 a discharged to the outside through the manual damper 10 is measured by the exhaust flow meter 11, and the measurement result is output as analog data and is taken into the data logger 12. Output as. For example, the measurement data includes the exhaust flow rate [l / min. ], And the horizontal axis represents the number of days. Based on this result, the exhaust flow rate of the gas 8a in the heating device 20 is monitored and grasped (details will be described later).

  Here, how much the temperature of the semiconductor wafer 4 subjected to the heat treatment depends on the exhaust flow rate of the gas 8a will be described with reference to FIGS. The extent to which the pattern size of the semiconductor device depends on the exhaust flow rate of the gas 8a will be described with reference to FIG.

  FIG. 3 shows the exhaust flow rate [l / min. ] And the temperature [° C.] of the semiconductor wafer 4 at this time, the set temperature of the heating unit 1a is 110 [° C.], and the set exhaust flow rate is 2 [l / min. ]. In FIG. 3, the average temperature of the semiconductor wafer 4 in a steady state is 110 [° C.], and the exhaust flow rate is 2 [l / min. The exhaust flow rate is 2 [l / min. ], The exhaust from the inside of the heating part 1a to the outside becomes insufficient, so the temperature in the heating part 1a tends to rise, and the exhaust flow rate is 0 [l / min. ], The average temperature of the semiconductor wafer 4 is 110.4 [° C.], which is 0.4 [° C.] higher than that in the steady state.

  The exhaust flow rate is 8 [l / min. ], The exhaust from the inside of the heating part 1a to the outside becomes excessive and the temperature inside the heating part 1a falls, so the average temperature of the semiconductor wafer 4 at this time is 3.5 than that in the steady state. [C] is low, 106.5 [C].

  As described above, the temperature of the semiconductor wafer 4 greatly depends on the exhaust flow rate of the gas 8a. When using a chemically amplified resist used in fine pattern processing, the pattern dimension greatly depends on the heating temperature. As a result, the pattern dimension greatly depends on the exhaust gas flow rate. This is shown in FIG.

  FIG. 4 shows the exhaust flow rate [l / min. ] And the pattern dimension [μm], and the exhaust flow rate at steady state is 2 [l / min. The average value of the pattern dimensions is 0.172 [μm], and the pattern dimension range (dimension difference) is 10 [nm]. In contrast, the exhaust flow rate is 0 [l / min. ], The average value of the pattern dimension is 0.170 [μm], the range of the pattern dimension is 18 [nm], and the average value of the pattern dimension is 0.002 [μm] thinner than that in the normal state. In addition, the range of the pattern dimension is as large as 8 [nm]. The exhaust flow rate is 8 [l / min. ], The average value of the pattern dimension is 0.236 [μm], the range of the pattern dimension is 30 [nm], and the average value of the pattern dimension is 0.074 [μm] thicker than in the normal state. In addition, the range of the pattern dimension is as large as 20 [nm]. Thus, the pattern dimension greatly depends on the exhaust flow rate of the gas 8a.

  FIG. 5 shows the relationship between the heating time [s] and the temperature [° C.] of the semiconductor wafer 4 for each exhaust flow rate under the same setting conditions as in FIG. As shown in FIG. 5, for example, the exhaust flow rate is 0 [l / min. ] Of the semiconductor wafer 4 at the time of 2 [l / min. ], Since the wafer temperature profiles of the two are different, the wafer temperature at 20 seconds is 0 [l / min. ] At 107.5 [° C.], 2 [l / min. ] Is 107.0 [° C.]. A temperature difference of 0.5 [° C.] between the two causes a difference in pattern dimensions as shown in FIG.

  As described above, the temperature of the semiconductor wafer 4 subjected to the heat treatment and the pattern size of the semiconductor device greatly depend on the exhaust flow rate of the gas 8a. It is important to respond quickly.

  Therefore, when outputting the results as in the example shown in FIG. 2, a decrease in the exhaust flow rate can be confirmed on the 25th day from the start of measurement, and the exhaust flow rate is 0 [l / min. Therefore, at this time, the heating unit 1a is immediately stopped, and as an emergency measure, the exhaust flow rate is set to 2 [l / min. ] To adjust.

  As described above, by providing the exhaust flow meter 11 and the data logger 12, the state of the exhaust flow rate of the gas 8a can be monitored and grasped in real time, and the change in the atmosphere in the heating unit 1a can be detected quickly. it can. Therefore, when an abnormality occurs in the exhaust flow rate of the gas 8a, it is possible to respond quickly, so that heat treatment is performed on the semiconductor wafer 4 under a situation where an abnormality occurs in the exhaust flow rate of the gas 8a. The yield of the semiconductor wafer 4 can be improved.

Further, if the relationship between the exhaust flow rate and the wafer temperature as shown in FIGS. 3 and 5 and the relationship between the exhaust flow rate and the pattern dimensions as shown in FIG. By monitoring and grasping the flow rate state, it is possible to easily grasp the fluctuation state of the temperature of the semiconductor wafer 4 and the fluctuation state of the pattern dimension, and manage the temperature and pattern dimension of the semiconductor wafer 4 in real time. .
(Embodiment 2)
In the second embodiment, an explanation will be given mainly on alarm output and stopping of the heating unit 1a when the exhaust flow rate of the heating device 30 is abnormal. In addition, the same code | symbol is attached | subjected to the thing similar to what was demonstrated using FIG. 1, and the detailed description is abbreviate | omitted.

  As shown in FIG. 6, the heating device 30 described in the second embodiment is connected to the data logger 12 in addition to the configuration of the heating device 20 shown in FIG. 1, and has an exhaust flow rate sent from the data logger 12. It is electrically connected to the controller 13 as a means for judging an abnormality of the value, a monitor 14 as an alarm output means connected to the controller 13 for outputting an alarm when the exhaust flow rate is abnormal, and the heating unit 1a. And an interlock (not shown) as a stopping means for stopping the operation of the heating unit 1a.

  In such a configuration, as in the first embodiment, the semiconductor wafer 4 is carried into the heating unit 1a and the heat treatment is started. In the second embodiment, the set value of the exhaust flow rate of the heating unit 1a is set to 2 [l / min. ].

Here, the operation state of the heating apparatus 30 after the heat treatment for the semiconductor wafer 4 is started will be described with reference to FIGS. 6 and 7.
As shown in FIG. 6 and FIG. 7, first, as step 1, the semiconductor wafer 4 is heated, and the gas 8a and the resist reaction product around the semiconductor wafer 4 are removed from the heating unit 1a through the manual damper 10. After that, it is sucked and exhausted to the outside. At this time, the exhaust flow meter 11 measures the exhaust flow rate, for example, every second.

Next, as step 2, the exhaust flow rate data measured by the exhaust flow meter 11 per second (hereinafter referred to as measured value F) is output by the data logger 12 and sent to the controller 13.
Next, as step 3, it is determined whether or not there is an abnormality in the measured value F of the exhaust flow rate sent from the data logger 12. At this time, as already described, in the second embodiment, the set value of the exhaust gas flow rate in the heating section 1a is set to 2 [l / min. ], The measured value F is, for example, F = 1 [l / min. ] To 3 [l / min. ], It is determined whether or not the measured value F is abnormal.

  The measured value F is F = 1 [l / min. ] To 3 [l / min. ], It is determined that the measured value F is a normal value, the process proceeds to step 4 to continue the heat treatment, and in step 5 it is determined whether or not to end the heat treatment. At this time, if the semiconductor wafer 4 is heated to a desired level, the heating process is terminated, and if not heated to a desired level, the process returns to step 1 to execute the heating process (continuation in this case). Do.

  In step 3, the measured value F is F = 1 [l / min. ] To 3 [l / min. If the measured value F is not satisfied, the process proceeds to step 6 and an alarm is output from the monitor 14. Then, the process proceeds to Step 7.

  In step 7, it is determined whether or not the measured value F is a serious abnormality. As a criterion for this determination, an abnormal tolerance range is set in advance, and it is determined whether or not the measured value F is a numerical value within the abnormal tolerance range. In this case, the set value of the exhaust gas flow rate in the heating unit 1a is 2 [l / min. Therefore, for example, 0.5 [l / min. ] To 4 [l / min. ] Value is set. Therefore, in step 7, the measured value F is F = 0.5 [l / min. ] To 4 [l / min. ] Is satisfied.

  If the measured value F satisfies this condition, it is determined that the measured value F is within the allowable error range, and the process proceeds to step 4 to perform the processes after step 4 described above. If the measured value F does not satisfy this condition, the interlock is activated to stop the operation of the heating unit 1a, assuming that the measured value F is outside the allowable error range.

  As described above, when it is determined that the measured value F is abnormal, an alarm is output from the monitor 14 so that the operator can be quickly notified that the exhaust flow rate of the gas 8a is abnormal. And the fluctuation | variation of the atmosphere in the heating part 1a can be detected rapidly, and a quick response with respect to abnormality can be performed. Thereby, it can suppress that the temperature of the semiconductor wafer 4 becomes too high, or becomes too low. In addition, when the exhaust flow rate of the gas 8a is not a value within a preset allowable tolerance range, the heating unit 1a is stopped by an interlock, thereby causing an abnormality in the exhaust flow rate of the gas 8a. It is possible to prevent the semiconductor wafer 4 from being subjected to heat treatment. Therefore, the yield of the semiconductor wafer 4 can be improved.

  In the above description, the case where the heating unit 1a is stopped by the interlock when the exhaust flow rate of the gas 8a is not within the abnormal allowable range is described. However, the present invention is not limited to this, and the measured value F is F = 1 [l / min. ] To 3 [l / min. ] May not be satisfied, an interlock may be actuated to stop the heating unit 1a.

(Embodiment 3)
In the third embodiment, description will be made mainly on automatically adjusting the exhaust flow rate when the exhaust flow rate of the heating device 40 is abnormal. In addition, the same code | symbol is attached | subjected to the thing similar to what was demonstrated using FIG. 6, and the detailed description is abbreviate | omitted.

  As shown in FIG. 8, the heating device 40 described in the third embodiment is provided with an automatic adjustment valve 15 as an exhaust flow rate adjusting means instead of the manual damper 10 in the heating device 30 shown in FIG. 6, and The automatic adjustment valve 15 and the controller 13 are electrically connected. In addition, the other part is the structure similar to the heating apparatus 30 shown in FIG.

  In such a configuration, the semiconductor wafer 4 is carried into the heating unit 1a in the same manner as in the first and second embodiments, and the heat treatment is started. Also in the third embodiment, the set value of the exhaust flow rate of the heating unit 1a is set to 2 [l / min. ].

Here, an operation state of the heating apparatus 40 after the heat treatment for the semiconductor wafer 4 is started will be described with reference to FIGS. 8 and 9.
As shown in FIGS. 8 and 9, first, as Step 1, the semiconductor wafer 4 is heated, and the gas 8a and the resist reaction product around the semiconductor wafer 4 are sent from the heating unit 1a to the automatic adjustment valve 15. The air is sucked and exhausted outside. At this time, as in the second embodiment, the exhaust flow meter 11 measures the exhaust flow rate, for example, every second.

  Next, in the same manner as in the second embodiment, the operations from Step 2 to Step 7 are performed. In step 7, the measured value F is F = 0.5 [l / min. ] To 4 [l / min. If the measured value F satisfies this condition, the process proceeds to step 8 assuming that the measured value F is within a tolerance range (referred to as an automatic adjustment range in the third embodiment). .

  In step 8, based on the data of the measured value F sent from the controller 13, the automatic adjustment valve 15 performs automatic adjustment so that the exhaust flow rate of the gas 8a becomes a normal value. Proceed to step 4, and the processing after step 4 already described is performed. The measured value F is F = 0.5 [l / min. ] To 4 [l / min. ], The measured value F is assumed to be outside the automatic adjustment range, and the interlock is activated to stop the operation of the heating unit 1a, as in the case of the second embodiment.

  As described above, by providing the automatic adjustment valve 15 that automatically adjusts the exhaust flow rate of the gas 8a, when the exhaust flow rate of the gas 8a is abnormal, the automatic adjustment valve 15 converts the abnormal exhaust flow rate to the normal exhaust flow rate. It is possible to quickly adjust to the abnormalities by automatically adjusting. Therefore, it is possible to prevent the semiconductor wafer 4 from being subjected to heat treatment under a situation where the exhaust flow rate of the gas 8a is abnormal. Thereby, the yield of the semiconductor wafer 4 can be improved.

  The apparatus for heating a resist coated body and the monitoring method thereof according to the present invention can always monitor the exhaust flow rate, and can respond quickly when the exhaust flow rate is abnormal on the exhaust output side. If the temperature profile and the pattern dimensions on the wafer are known, abnormalities in the heating device and the like can be grasped quickly, which is useful as a heating device for a resist coated body for manufacturing a semiconductor device.

The figure which shows the heating apparatus of Embodiment 1 of this invention Figure showing an example of the exhaust flow rate trend in a heating device Relationship diagram between exhaust flow rate and wafer temperature Relationship between exhaust flow rate and wafer pattern dimensions Relationship diagram between exhaust flow rate and wafer temperature profile The figure which shows the heating apparatus of Embodiment 2 of this invention The flowchart regarding operation | movement of the heating apparatus shown in FIG. The figure which shows the heating apparatus of Embodiment 3 of this invention Flowchart for automatic adjustment of exhaust flow rate in heating device shown in FIG. A diagram showing a conventional semiconductor wafer heating device after resist coating Diagram showing the trend of semiconductor wafer pattern dimensions

Explanation of symbols

DESCRIPTION OF SYMBOLS 1a Heating part 4 Semiconductor wafer 7 Purge pump 8a Gas 11 Exhaust flow meter 12 Data logger 20 Heating device

Claims (4)

Heating means for arranging and heating the resist coated body coated with resist, means for discharging the gas around the heated resist coated body to the outside of the heating means, and the discharged gas And a data processing means for outputting the measured value measured by the measuring means as data. Means for determining an abnormality in the gas exhaust flow rate based on data output from the data processing means; alarm output means for outputting an alarm when the exhaust flow rate is abnormal; and a resist coated body when there is the abnormality 2. A resist coating object heating apparatus according to claim 1, further comprising a stopping means for stopping said heating means. 3. The apparatus for heating a resist coating object according to claim 2, further comprising an exhaust flow rate adjusting means for automatically adjusting the exhaust flow rate when the exhaust flow rate is a value within a preset allowable abnormality range. 2. The apparatus for heating a resist coating object according to claim 1, wherein an abnormality in the exhaust flow rate of the gas discharged from the heating means is determined based on data output from the data processing means, and the exhaust flow rate is abnormal. A method for monitoring a resist coated body, which outputs an alarm and stops the heating means when there is an abnormality.

Images