KR20200092187A - System for vacuum pump, method for vacuum pump monitoring and method for semiconductor manufacturing - Google Patents

Abstract

Provided is a vacuum pump system capable of detecting a failure of a vacuum pump in advance. The vacuum pump system comprises: a vacuum pump; a connection pipe connected to the vacuum pump; and a monitoring device coupled to the connection pipe. The monitoring device comprises: a bypass pipe connected to the connection pipe to provide a bypass path for bypassing the connection pipe; and a pressure sensor for measuring the pressure of the bypass pipe.

Description

System for vacuum pump monitoring, method for vacuum pump monitoring and method for semiconductor manufacturing

The present invention relates to a vacuum pump system, a vacuum pump monitoring method and a method for manufacturing a semiconductor device, and more particularly, to a vacuum pump system, a vacuum pump monitoring method and a semiconductor device manufacturing method capable of detecting a failure of a vacuum pump in advance. It is about.

Semiconductors can be manufactured by several processes. Various processes such as deposition and etching may exist in the semiconductor process. Each process can be performed in a special environment. For example, the deposition process can be performed under a vacuum environment.

In order to proceed with the deposition process, it may be necessary to keep the process chamber interior in a substantial vacuum. A vacuum pump can be used to keep the process chamber interior in a vacuum.

The problem to be solved by the present invention is to provide a vacuum pump system, a vacuum pump monitoring method and a semiconductor device manufacturing method capable of detecting a failure of a vacuum pump in advance.

The problem to be solved by the present invention is to provide a vacuum pump system, a vacuum pump monitoring method and a method for manufacturing a semiconductor device, which can prevent damage to a wafer, thereby improving process yield and reducing economic cost.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

Vacuum pump system according to an embodiment of the present invention to achieve the problem to be solved is a vacuum pump; A connection pipe connected to the vacuum pump; And a monitoring device coupled to the connector. Including, but the monitoring device comprises: a bypass pipe connected to the connector to provide a bypass to bypass the connector; And a pressure sensor measuring the pressure of the bypass tube. It may include.

Vacuum pump monitoring method according to an embodiment of the present invention to achieve the problem to be solved is to operate the vacuum pump connected to the connector; And measuring pressure using a monitoring device coupled to the connector. Including, but the monitoring device comprises: a bypass pipe connected to the connector to provide a bypass to bypass the connector; And a pressure sensor measuring the pressure of the bypass tube. Including, measuring the pressure may be performed by the pressure sensor.

A semiconductor device manufacturing method according to an embodiment of the present invention to achieve the problem to be solved is to operate a vacuum pump connected to the connector; And measuring pressure using a monitoring device coupled to the connector. Including, but the connection tube is connected to the process chamber, the process chamber includes a semiconductor process chamber for performing a manufacturing process of a semiconductor device, the monitoring device: is connected to the connection tube to bypass the connection tube A bypass tube providing a bypass; And a pressure sensor measuring the pressure of the bypass tube. Including, measuring the pressure may be performed by the pressure sensor.

Details of other embodiments are included in the detailed description and drawings.

According to the vacuum pump system of the present invention, a method for monitoring a vacuum pump and a method for manufacturing a semiconductor device, failure of the vacuum pump can be detected in advance.

According to the vacuum pump system of the present invention, a vacuum pump monitoring method, and a method for manufacturing a semiconductor device, it is possible to prevent damage to a wafer to improve process yield and reduce economic cost.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a cross-sectional view showing a vacuum pump system according to an exemplary embodiment of the present invention.
2 is an enlarged cross-sectional view of part A of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention.
3 is an enlarged cross-sectional view of part B of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention.
4 is a flow chart showing a vacuum pump monitoring method according to an exemplary embodiment of the present invention.
5 is a cross-sectional view showing an operating state of a vacuum pump system according to an exemplary embodiment of the present invention.
6 is an enlarged cross-sectional view of part B of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention.
7 is an enlarged cross-sectional view of part B of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The same reference numerals throughout the specification may refer to the same components.

1 is a cross-sectional view showing a vacuum pump system according to an exemplary embodiment of the present invention.

Hereinafter, the right direction of FIG. 1 is substantially perpendicular to the first direction D1, the upper direction to the second direction D2, the first direction D1 and the second direction D2, and the direction toward the front is eliminated. It can be referred to as three directions D3.

Referring to FIG. 1, the vacuum pump system may include a vacuum pump 1, a connector 3, a monitoring device 5, and an exhaust treatment device 9. In embodiments, the vacuum pump system may further include a control unit (C). The vacuum pump system can be connected to the process chamber 7.

The vacuum pump 1 can suck fluid. The interior of the process chamber 7 can be brought into a substantially vacuum state by means of the vacuum pump 1. As used herein, the term pump may mean a device that regulates the pressure of liquids, gases, and other particles.

The connecting pipe 3 can be connected to the vacuum pump 1. The connection pipe 3 may include a first connection pipe 31 and a second connection pipe 33. The first connector 31 can be coupled to the process chamber 7. The first connection pipe 31 may connect the vacuum pump 1 and the process chamber 7. The vacuum pump 1 can suck particles in the process chamber 7 through the first connecting pipe 31. The fluid from the process chamber 7 can flow through the first connecting pipe 31 to the vacuum pump 1. The second connector 33 can be coupled to the exhaust treatment device 9. The second connection pipe 33 may connect the vacuum chamber 1 and the exhaust treatment device 9. The fluid from the vacuum chamber 1 can flow through the second connecting pipe 33 to the exhaust treatment device 9.

The monitoring device 5 can be coupled to the connector 3. A plurality of monitoring devices 5 may be provided. In embodiments, the monitoring device 5 may include a first monitoring device 51 and a second monitoring device 53. The first monitoring device 51 may be coupled to the first connector 31. The second monitoring device 53 may be coupled to the second connector 33.

The exhaust processing apparatus 9 can process exhaust gas. The exhaust treatment device 9 can be connected to the vacuum pump 1. In embodiments, the exhaust treatment device 9 may be connected to the vacuum pump 1 via the second connection pipe 33. The fluid and other particles from the vacuum pump 1 can be introduced into the exhaust treatment device 9 through the second connecting pipe 33.

The control unit C can control the vacuum pump 1 and the process chamber 7. The control unit C may receive information on pressure from the monitoring device 5. The control unit C may control the vacuum pump 1 and/or the process chamber 7 based on information on the pressure received from the monitoring device 5.

The process chamber 7 may provide a space in which the process proceeds. In embodiments, the process may include a semiconductor manufacturing process. The process can proceed within the process chamber 7. In embodiments, a deposition process or the like may be performed within the process chamber 7. The interior of the process chamber 7 may need to be maintained close to a substantial vacuum. The process chamber 7 can be connected to the vacuum pump 1. In embodiments, the process chamber 7 may be connected to the vacuum pump 1 via the first connector 31. By the operation of the vacuum pump 1, fluid and other particles inside the process chamber 7 can be removed from the process chamber 7. The process chamber 7 can be maintained in a substantial vacuum.

2 is an enlarged cross-sectional view of part A of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention.

1 and 2, the vacuum pump may include a housing 11 and a rotating body 13.

The housing 11 may be the body of a vacuum pump. The housing 11 may provide a space in which the rotating body 13 is accommodated. The housing 11 may wrap the rotating body 13. The rotating body 13 may be accommodated in the housing 11.

The rotating body 13 can rotate. The rotating body 13 may include a rotatable rotor or the like. In embodiments, a plurality of rotating bodies 13 may be provided. The rotating bodies 13 may be spaced apart from each other in the first direction D1. Alternatively, the rotating bodies 13 may be spaced apart from each other in the second direction D2. The rotating body 13 may include cast iron, nickel, cast iron-nickel alloy, and the like. In embodiments, the rotating body 13 may be plated with nickel.

The rotating body 13 may be spaced apart from the inner surface of the housing 11. In embodiments, the first outer surface 131 of the rotating body 13 may be spaced apart from the first inner surface 111 of the housing 11 by a first distance (x). In embodiments, the second outer surface 133 of the rotating body 13 may be spaced apart from the second inner surface 113 of the housing 11 by a second distance y. The first distance x and the second distance y may be narrow. In embodiments, the first distance x and the second distance y may be narrower than the thickness of the housing 11. As the rotating body 13 is spaced apart from the inner surface of the housing 11, a passage through which fluid or the like passes may be formed between the rotating body 13 and the housing 11. The cross-sectional area of the passage can be small. More specifically, the cross-sectional area of the passage may be smaller than the thickness of the housing 11.

When the rotating body 13 rotates, fluid, particles, and the like inside the process chamber 7 may be sucked by a vacuum pump. If the rotating body 13 continues to rotate, fluid and particles sucked into the vacuum pump can be discharged toward the exhaust treatment device 9. Since the rotating body 13 and the housing 11 are spaced apart, fluid and particles may flow between the rotating body 13 and the housing 11.

While the rotating body 13 rotates, the temperature of the rotating body 13 and the housing 11 may be increased. By rotation of the rotating body 13, fluid and particles inside the process chamber 7 can be introduced into the housing 11. The introduced fluid and particles may include corrosive substances. The inner surface of the housing 11 and the outer surface of the rotating body 13 may be corroded by corrosive materials. When the temperatures of the rotating body 13 and the housing 11 are high, corrosion by a corrosive material can be faster. When corrosion progresses, the distance between the rotating body 13 and the housing 11 may be reduced. The first distance x and the second distance y may be narrowed. The passages through which fluids and particles pass may be narrowed. When the corrosion proceeds over a certain level, the passage through which fluids and particles pass may become very narrow. The vacuum pump can stop operating. The suction operation to the process chamber 7 can be stopped. The interior of the process chamber 7 may not be maintained in a vacuum. The internal pressure of the process chamber 7 can be high. Fluid and particles may increase in the interior of the process chamber 7. Processes performed inside the process chamber 7 may be disturbed. In embodiments, when a wafer or the like is disposed inside the process chamber 7, the wafer or the like may be damaged by fluid, particles, or the like. When a plurality of wafers are disposed, all of the plurality of wafers may be damaged.

3 is an enlarged cross-sectional view of part B of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention.

Referring to FIG. 3, the first monitoring device 51 may include a bypass pipe 511 and a pressure sensor 513. In embodiments, the first monitoring device 51 may further include a heating device 515.

The bypass pipe 511 may be coupled to the first connecting pipe 31. The inner space of the bypass pipe 511 may communicate with the inner space of the first connecting pipe 31. The bypass pipe 511 can bypass the first connecting pipe 31. The fluid or the like flowing along the inner space of the first connecting pipe 31 may be bypassed along the inner space of the bypass pipe 511. In embodiments, the bypass tube 511 may include a first bypass tube 5111, a measurement tube 5113 and a second bypass tube 5115.

The first bypass pipe 5111 may be coupled to the first connecting pipe 31. Fluid or the like flowing along the first connection pipe 31 may be introduced into the first bypass pipe 5111. The extending direction of the first bypass tube 5111 may be varied. For example, the first bypass tube 5111 may extend in the second direction D2 as shown in FIG. 3. However, the present invention is not limited thereto, and the first bypass tube 5111 may be extended in other directions.

The measurement tube 5113 may be connected to the first bypass tube 5111. The fluid or the like introduced into the first bypass tube 5111 may flow to the measurement tube 5113. The cross section of the inner space of the measuring tube 5113 may be circular. However, the present invention is not limited thereto, and the cross section of the inner space of the measuring tube 5113 may include a quadrangular shape and/or a polygonal shape. The diameter of the inner space of the measuring tube 5113 may be a third distance z. The third distance z may be smaller than the first distance x (see FIG. 2) and/or the second distance y. Therefore, the cross-sectional area of the measuring tube 5113 may be smaller than the cross-sectional area of the passage between the housing 11 (see FIG. 2) and the rotating body 13. In embodiments, the cross-sectional area of the measuring tube 5113 may be 80 to 90% of the cross-sectional area of the passage between the housing 11 and the rotating body 13. The measuring tube 5113 may include the same or similar material to the rotating body 13. In embodiments, the measuring tube 5113 may include cast iron, nickel, cast iron-nickel alloy, and the like. In embodiments, the inner wall of the measuring tube 5113 may be plated with nickel.

The second bypass tube 515 may connect the measurement tube 5113 and the first connection tube 31. The fluid or the like in the measurement tube 5113 may be introduced back into the first connection tube 31 through the second bypass tube 515.

The pressure sensor 513 can measure the pressure in the inner space of the bypass tube 511. The pressure sensor 513 may transmit information about the measured pressure to the control unit C. A plurality of pressure sensors 513 may be provided. In embodiments, the pressure sensor 513 may include a first pressure sensor 5131 and a second pressure sensor 5133. The first pressure sensor 5131 may be coupled to the first bypass tube 5111. The first pressure sensor 5131 may measure the pressure in the inner space of the first bypass tube 5111. The second pressure sensor 5133 may be coupled to the second bypass tube 5113. The second pressure sensor 5133 may measure the pressure in the inner space of the second bypass tube 5113. When pressure sensors 5131 and 5133 are disposed at the front and rear sides of the measuring tube 5113, fluid or the like can sense a change in pressure occurring while passing through the inner space of the measuring tube 5113.

The heating device 515 can heat the bypass tube 511. The heating device 515 may be located around the measurement tube 5113. The heating device 515 can heat the measuring tube 5113. By heating the heating device 515, the temperature of the inner space of the measuring tube 5113 may be raised. The heating device 515 may include a coil or the like. In embodiments, the heating device 515 may heat the measurement tube 5113 so that the temperature of the measurement tube 5113 approaches the temperature of the housing 11 (see FIG. 2) and the rotating body 13. Therefore, the environment of the inner space of the measuring tube 5113 may be similar to the environment of a passage provided between the housing 11 and the rotating body 13.

In embodiments, the second monitoring device 53 may include a configuration substantially the same as or similar to the first monitoring device 51.

4 is a flow chart showing a vacuum pump monitoring method according to an exemplary embodiment of the present invention, and FIG. 5 is a cross-sectional view showing an operating state of the vacuum pump system according to an exemplary embodiment of the present invention.

4, the vacuum pump monitoring method (S) is to operate the vacuum pump (S1), to measure the pressure (S2), to receive a signal from a pressure sensor (S3), to interpret the signal And (S4) and stopping the operation of the pump when an abnormal signal is detected (S5).

Hereinafter, a vacuum pump monitoring method (S) will be described in detail with reference to FIGS. 1 to 3 and 5 based on FIG. 4.

Referring to FIGS. 1 and 4, the controller C may control the vacuum pump 1 in operating the vacuum pump (S1 ). The vacuum pump 1 can be operated by the control of the control unit C. When the vacuum pump 1 is operated, the rotating body 13 (see FIG. 2) may rotate. When the rotating body 13 rotates, fluid, particles, and the like inside the process chamber 7 may flow into the vacuum pump 1. More specifically, fluid, particles, and the like inside the process chamber 7 may pass through the first connection pipe 31 and flow into the vacuum pump 1. Some of the fluid and particles, etc., can be bypassed by the monitoring device 5 when passing through the first connecting pipe 31. Referring to FIG. 5, a part of a fluid or the like may flow to the first bypass tube 5111, the measurement tube 5113, and the second bypass tube 5115. The fluid or the like that has passed through the second bypass pipe 5115 may again enter the vacuum pump 1 through the first connecting pipe 31. The fluid or the like may be discharged to the second connecting pipe 33 through the passage between the rotating body 13 and the housing 11. A portion of the fluid or the like passing through the second connecting pipe 33 may be bypassed and flow to the second monitoring device 53. The process of bypassing the second monitoring device 53 may be substantially the same or similar to the process of bypassing the first monitoring device 51. The fluid or the like exiting the second monitoring device 53 may be introduced into the exhaust treatment device 9 through the second connection pipe 33.

In measuring the pressure (S2), the pressure of the fluid passing through the monitoring device 5 can be measured. Referring to FIG. 5, the pressure of the fluid passing through the first bypass tube 5111 may be measured by the first pressure sensor 5131. The pressure of the fluid passing through the second bypass tube 5115 may be measured by the second pressure sensor 5133. In the second monitoring device 53 (see FIG. 1 ), pressure measurement may be performed in substantially the same or similar manner to the first monitoring device 51.

In receiving the signal from the pressure sensor (S3), the pressure sensor 513 may transmit a signal to the control unit C (see FIG. 1). More specifically, the first pressure sensor 5131 may transmit the pressure of the fluid passing through the first bypass pipe 5111 to the control unit C. The second pressure sensor 5133 may transmit the pressure of the fluid passing through the second bypass tube 5115 to the control unit C. The control unit C may receive information about the pressure inside the first bypass pipe 5111 and the second bypass pipe 5115. The second monitoring device 53 may transmit information on pressure to the control unit C. In embodiments, the second monitoring device 53 may transmit information about the pressure to the control unit C in a substantially the same or similar manner to the first monitoring device 51.

In interpreting the signal (S4 ), the control unit C may interpret the information transmitted from the first monitoring device 51. The control unit (C) is information about the internal pressure of the first bypass tube (5111) received from the first pressure sensor (511), and the internal pressure of the second bypass tube (5115) received from the second pressure sensor (5133) Using the information about, it can be calculated for the pressure drop generated in the measuring tube (5113). More specifically, the control unit C calculates the difference between the internal pressure of the second bypass tube 5115 and the internal pressure of the first bypass tube 5111 to calculate the pressure drop generated in the measurement tube 5113 Can. The control unit C may interpret the information received from the second monitoring device 53. Interpreting the information transmitted from the second monitoring device 53 may be substantially the same or similar to interpreting the information transmitted from the first monitoring device 51.

If an abnormal signal is detected, the controller C may detect the abnormal signal in stopping the process (S5 ). More specifically, the controller C may detect that an abnormal signal is generated in interpreting the signal (S4 ). In embodiments, the abnormal signal may mean a case in which information on pressure transmitted from the pressure sensors of the first pressure sensor 5131, the second pressure sensor 5133, and/or the second monitoring device 53 is abnormal. have. If the pressure information is abnormal, it may mean that a sudden change in pressure occurs or the pressure is out of a certain numerical range. When an abnormal signal is detected, the control unit C may stop the process by controlling the process chamber 7 or the like. More specifically, when an abnormal signal is detected, the controller C may proceed only to the process performed at the time the abnormal signal is detected, and may not proceed to the next process. A wafer or the like may no longer be supplied to the process chamber 7.

When the process is stopped, the vacuum pump can be replaced. When the vacuum pump is replaced, the monitoring device can also be replaced. If the vacuum pump and monitoring device are replaced, the process can proceed again.

According to embodiments of the present invention, a semiconductor device manufacturing method may include a vacuum pump monitoring method described with reference to FIG. 4. That is, the semiconductor device manufacturing method may be performed including a vacuum pump monitoring method.

According to a vacuum pump system, a vacuum pump monitoring method and a method for manufacturing a semiconductor device according to exemplary embodiments of the present invention, a monitoring device including a measuring tube may be disposed at the front and/or rear of the vacuum pump. The inner wall of the measuring tube may comprise the same or similar material as the rotating body and/or housing of the vacuum pump. Therefore, the rate at which by-products are adsorbed, deposited and/or corroded on the inner wall of the measuring tube may be substantially the same or similar to the rate at which by-products are adsorbed, deposited and/or corroded in the passage of the vacuum pump. The measuring tube can also be heated by means of a heating device. By heating the heating device, the measuring tube can be heated similar to the temperature inside the vacuum pump. The rate at which by-products are adsorbed, deposited and/or corroded can be temperature dependent. Therefore, if the temperature of the measuring tube is kept similar to that of the vacuum pump, the rate at which the measuring tube is adsorbed, deposited and/or corroded by by-products and the rate at which the passage of the vacuum pump is adsorbed, deposited and/or corroded by by-products Can be similar.

The cross-sectional area of the measuring tube may be similar to or smaller than that of the passage of the vacuum pump. Therefore, before the passage of the vacuum pump is blocked by adsorption, deposition and/or corrosion, the measuring tube may first be blocked by adsorption, deposition and/or corrosion. If the pressure sensor is arranged before and after the measuring tube, it can be detected that the measuring tube is blocked. If the measuring tube is blocked, it can be expected that the passage of the vacuum pump will soon be blocked. Therefore, if it is detected that the measuring tube is blocked, the process may be performed until the process performed at the time of detection, and the next process may not be performed. A wafer or the like may no longer be supplied to the process chamber. Since the process is stopped before the vacuum pump fails, it is possible to prevent the vacuum pump from failing in the middle of the process. Therefore, it is possible to prevent the wafer or the like disposed in the process chamber from being damaged due to a failure of the vacuum pump during the process, and the production yield of the wafer or the like can be improved. Since the wafer can be prevented from being damaged and discarded, it is also possible to reduce the economic cost. The price of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to exemplary embodiments of the present invention may decrease.

According to the vacuum pump system, the vacuum pump monitoring method and the semiconductor device manufacturing method according to the exemplary embodiments of the present invention, the monitoring devices may be disposed one at the front and the rear of the vacuum pump. Therefore, the accuracy of prediction of the failure of the vacuum pump can be improved.

6 is an enlarged cross-sectional view of part B of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention, and FIG. 7 is enlarged of part B of FIG. 1 in a vacuum pump system according to an exemplary embodiment of the present invention. It is one section.

Hereinafter, descriptions of substantially the same or similar contents to those described with reference to FIGS. 1 to 5 may be omitted for convenience.

Referring to FIG. 6, the monitoring device may further include an adjustment device 517. The adjusting device 517 may be connected to the measuring tube 5113. The adjusting device 517 can adjust the cross-sectional area of the measuring tube 5113. In embodiments, the adjusting device 517 may lower the upper part 5113a of the measuring tube 5113 to make the distance from the lower part 5113b closer. Referring to FIG. 7, a distance between an upper part 5113a of the measuring tube 5113 and a lower part 5113b of the measuring tube 5113 may be a 3-1 distance z'. The 3-1 distance z'may be smaller than the third distance z (see FIG. 6 ). Therefore, when the upper part 5113a descends by the adjusting device 517, the cross-sectional area of the measuring tube 5113 may be narrowed. In embodiments, the adjusting device 517 may change the cross-sectional area of the measuring tube 5113 in a threaded manner. However, the present invention is not limited thereto, and the adjusting device 517 may include various other mechanisms capable of changing the cross-sectional area of the measuring tube 5113.

According to a vacuum pump system, a vacuum pump monitoring method, and a method for manufacturing a semiconductor device according to exemplary embodiments of the present invention, a cross-sectional area of a measuring tube may be changed using a regulating device. Even when the cross-sectional areas of passages are different for each vacuum pump, it can be applied to various vacuum pumps with only one monitoring device. For example, if the cross-sectional area of the passage of the vacuum pump is smaller, a control device can be used to make the cross-sectional area of the measuring tube narrow. Therefore, the shape of the passage of the vacuum pump can be more accurately simulated. Since several types of vacuum pumps can be simulated with a single monitoring device, the manufacturing cost of the monitoring device can be reduced.

Since the cross-sectional area of the measuring tube can be changed by the adjusting device, an experiment can be performed in various ways using a single monitoring device. That is, by implementing various cross-sectional areas with only one monitoring device, an experiment to find the cross-sectional area of a measuring tube optimized for failure prediction of the corresponding vacuum pump can be repeatedly performed. The fixed prediction of the vacuum pump can be made more accurate.

The embodiments of the present invention have been described above with reference to the accompanying drawings, but those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing its technical spirit or essential features. You will understand that there is. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

1: vacuum pump
11: housing
111: the first inner
113: the second inner
13: rotating body
131: first exterior
133: second outer surface
3: connector
31: first connector
33: second connector
5: Monitoring device
51: first monitoring device
511: bypass tube
5111: 1st bypass tube
5113: measuring tube
5115: second bypass tube
513: pressure sensor
5131: first pressure sensor
5133: second pressure sensor
515: heating device
517: Adjuster
53: second monitoring device
7: process chamber
9: Exhaust treatment device
C: Control

Claims (10)

Vacuum pump;
A connection pipe connected to the vacuum pump; And
A monitoring device coupled to the connector; Including,
The monitoring device is:
A bypass pipe connected to the connection pipe and providing a bypass for bypassing the connection pipe; And
A pressure sensor that measures the pressure of the bypass tube; Vacuum pump system comprising a.
According to claim 1,
The bypass tube is:
A first bypass pipe connected to the connecting pipe;
A measuring tube connected to a rear end of the first bypass tube;
A second bypass tube connecting the rear end of the measuring tube and the connecting tube; Vacuum pump system comprising a.
According to claim 2,
The pressure sensor includes a first pressure sensor and a second pressure sensor,
The first pressure sensor is connected to the first bypass tube,
The second pressure sensor is a vacuum pump system connected to the second bypass tube.
According to claim 2,
The cross-sectional area of the measuring tube is smaller than the cross-sectional area of the passage between the housing of the vacuum pump and the rotating part of the vacuum pump.
According to claim 2,
The monitoring device further comprises a control device for adjusting the cross-sectional area of the measuring tube.
According to claim 1,
The monitoring device further comprises a heating device for heating the bypass tube.
According to claim 1,
The connector is a first connector coupled to the front end of the vacuum pump; And a second connector connected to the rear end of the vacuum pump. Including,
The monitoring device includes a first monitoring device coupled to the first connector; And a second monitoring device coupled to the second connector. Vacuum pump system comprising a.
Operating a vacuum pump connected to the connector; And
Measuring pressure using a monitoring device coupled to the connector; Including,
The monitoring device is:
A bypass pipe connected to the connection pipe and providing a bypass for bypassing the connection pipe; And
A pressure sensor that measures the pressure of the bypass tube; Including,
Measuring the pressure is a vacuum pump monitoring method performed by the pressure sensor.
The method of claim 8,
A control unit receiving a signal from the pressure sensor;
The control unit interpreting the signal; And
And stopping the process when the abnormal signal is detected.
Operating a vacuum pump connected to the connector; And
Measuring pressure using a monitoring device coupled to the connector; Including,
The connecting pipe is connected to the process chamber,
The process chamber includes a semiconductor process chamber for performing a process for manufacturing a semiconductor device,
The monitoring device is:
A bypass pipe connected to the connection pipe and providing a bypass for bypassing the connection pipe; And
A pressure sensor that measures the pressure of the bypass tube; It includes,
Measuring the pressure is a method of manufacturing a semiconductor device performed by the pressure sensor.

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