JP2005203771A - 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 - Google Patents
基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000005468 ion implantation Methods 0.000 claims abstract description 87
- 238000010884 ion-beam technique Methods 0.000 claims description 52
- 230000010363 phase shift Effects 0.000 claims description 15
- 229910001423 beryllium ion Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 abstract description 41
- 230000000694 effects Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 155
- 239000011295 pitch Substances 0.000 description 42
- 230000008569 process Effects 0.000 description 13
- 238000009826 distribution Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 230000000737 periodic effect Effects 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 206010011878 Deafness Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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Abstract
【解決手段】イオン注入装置は、イオン注入用ビームに対して基板の二次元走査を行って、ビームが基板上に走査線のラスタを描くようにする。基板から離れた転換ポイントでビーム電流を測定し、その電流値を使用して、低速走査方向におけるドーズ均一性に対するビーム電流の変動の影響を補償するように、その後の高速走査速度を制御する。走査は、非交差の均一離間された平行走査線のラスタを発生することができ、線と線との間隔は、適切なドーズ均一性を確保するように選択される。
【選択図】図1
Description
Claims (14)
- 基板をイオン注入する方法であって、
a)所定のビーム方向を有するイオン注入用ビームを発生させるステップと、
b)前記基板の面を横切る軸周りにイオン注入用ビームに関して第1配向に前記基板を方向付けるステップと、
c)前記第1配向において、基板とビーム間に第1相対的移動を生じさせ、前記第1相対的移動は(i)基板上方にビームの少なくとも1つのビームパスを形成する為に、ビーム方向を横切る第1方向と平行であり、(ii)各々の前記パス中において基板上方でビームの複数走査を形成する為に、ビーム方向及び前記第1方向を横切る第2方向と平行であり、前記走査は、前記第1方向に所定間隔をもつ中間ポイントを有する第1ラスタ線を基板上に描くステップと、
d)前記第1配向に対し前記軸周りに180°で第2の前記配向に基板を方向付けるステップと、
e)前記第2配向において、基板とビーム間に相対的移動を生じさせて、前記第1ラスタ線でインターリーブされた第2ラスタ線を基板上に描くステップと、
を備えた方法。 - 前記第1配向に対し前記軸周りに90°で第3の前記配向に基板を方向付けるステップと、
前記第3配向において、第3の前記相対的移動を生じさせて、前記第1ラスタ線と前記第2ラスタ線に対し90°の第3ラスタ線を描くステップと、
前記第3方向に対し前記軸周りに180°で第4配向に基板を方向付けるステップと、
前記第4配向において、第4の前記相対的移動を生じさせて、前記第3ラスタ線でインターリーブされた第4ラスタ線を描くステップと、
を更に含む、請求項1記載の方法。 - 前記軸は、ビーム方向と同一方向である、請求項1記載の方法。
- 前記走査は、非交差の均一に離間された実質的に平行なラスタ線を基板に描く、請求項1に記載の方法。
- 前記第2方向における基板とビーム間の前記相対的移動は、基板を前記第2方向と平行に機械的に往復動することにより生じ、更に、前記第1方向における前記相対的移動は、前記基板を走査間で均一距離だけ前記第1方向に対し平行に機械的に並進移動することにより生じさせる、請求項4に記載の方法。
- 前記基板は、各走査間に前記均一距離のステップで並進移動される、請求項5に記載の方法。
- イオン注入用ビームは、前記第1方向において一定の強度プロフィールを持ち、非対称であり、前記第1ラスタ及び第2ラスタは、共通の線ピッチで描かれ、前記相対的移動は、前記第2ラスタを描き、上記第1ラスタに関し空間的位相シフトを有し、第1ラスタは、100%位相シフトが前記共通線ピッチに等しい場合に50%と異なる、請求項1に記載の方法。
- 前記空間的位相シフトは、前記第1方向におけるドーズを改善するように選択される、請求項7に記載の方法。
- 所望の原子種を含む所定ビーム束を有するイオン注入用ビームを生じさせるイオンビーム発生装置を備えるイオン注入装置において:
イオン注入される基板を保持する為の基板ホルダであって、ホルダ上の基板ウェハ面を横切る捻り回転軸の周りで回転する為に取り付けられた、前記ホルダと;
前記ホルダをイオン注入用ビームに関し選択された配向まで捻り回転軸周りに回転させる、前記捻り回転用駆動装置と、
ホルダ上の基板とビーム間に、相対的移動を生じさせる為に動作可能な走査装置であって、前記相対的移動は(i)基板上にビームの少なくとも1つのパスを実施する為に、ビーム方向を横切る第1方向と平行であり、(ii)各々の前記パス中に基板上にビームの複数の走査を生じさせる為に、ビーム方向及び前記第1方向を横切る第2方向と平行であり、前記走査は、前記第1方向で均一に離間された中間ポイントを有するラスタ線を基板上に描く、前記走査装置と、
前記捻り回転用駆動装置と前記走査装置をイオン注入中に制御するように配置されたコントローラであって、
a)ホルダ上の基板を前記軸周りにイオン注入用ビームに関し第1配向まで方向付け、
b)前記第1配向において、基板とビーム間に前記第1相対的移動を生じさせて、前記第1ラスタ線を基板上に描き、
c)前記第1配向に対し前記軸周りに180°で前記第2配向にホルダ上の基板を方向付け、
d)前記第2配向において、基板とビーム間の前記第2相対的移動を生じさせて、前記第1ラスタ線でインターリーブされた第2ラスタ線を基板上に描く、
イオン注入装置。 - コントローラは、
ホルダ上の基板を、前記第1配向に対し前記軸周りに90°で前記第3配向にホルダ上の基板を方向付けるように配置され、
前記第3配向において、第3の前記相対的移動を生じさせて、前記第1及び第2ラスタ線に対し90°で第3の前記ラスタ線を描き、
前記第3配向に対し、前記軸周りに180°で第4配向に上記基板を方向付け、
前記第4配向において、第4の前記相対的移動を生じさせて、前記第3ラスタ線でインターリーブされた第4の前記ラスタ線を描く、
イオン注入装置。 - 前記捻り回転軸は、ホルダ上の基板ウェハの面に垂直であり、前記ホルダは、前記面と同一方向の傾斜軸周りに回転するように取り付けられ、イオン注入装置は、傾斜駆動装置を含み、イオン注入用ビームに関し選択された傾斜角度に対し傾斜軸周りに前記ホルダを回転させ、ここで、前記コントローラは、前記傾斜駆動装置が基板とビーム間の前記第1相対的移動中に第1傾斜角度で前記ホルダを方向付けるように、更に、基板とビーム間の前記第2相対的移動中に前記第1傾斜角度と同一かつ反対側の第2傾斜角度で前記ホルダを方向付けるように、前記傾斜駆動装置を同様に制御する、請求項10記載のイオン注入装置。
- 前記走査装置は、走査が非交差の均一離間された実質的に平行線のラスタを基板上に描くように動作する、請求項9に記載のイオン注入装置。
- 前記走査装置は、基板とビーム間の相対的移動が、前記第2方向において機械的に上記基板ホルダを前記第2方向と平行に往復動することにより生じ、前記相対的移動が、前記第1方向において機械的に前記基板を第1方向と平行に走査間で均一距離だけ並進移動することにより生じるように動作可能である、請求項12記載のイオン注入装置。
- 前記走査装置は、各走査間で前記均一距離だけ前記基板ホルダを並進移動するように動作可能である、請求項13に記載のイオン注入装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/754,502 US7049210B2 (en) | 2002-09-23 | 2004-01-12 | Method of implanting a substrate and an ion implanter for performing the method |
US10/754502 | 2004-01-12 |
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Publication Number | Publication Date |
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JP2005203771A true JP2005203771A (ja) | 2005-07-28 |
JP5047463B2 JP5047463B2 (ja) | 2012-10-10 |
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JP2005000244A Expired - Fee Related JP5047463B2 (ja) | 2004-01-12 | 2005-01-04 | 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 |
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Country | Link |
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US (2) | US7049210B2 (ja) |
JP (1) | JP5047463B2 (ja) |
KR (1) | KR101123841B1 (ja) |
CN (1) | CN100583376C (ja) |
GB (1) | GB2409929B (ja) |
TW (1) | TWI304224B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012234815A (ja) * | 2011-05-05 | 2012-11-29 | Advanced Ion Beam Technology Inc | イオン注入システム |
KR20130070540A (ko) * | 2011-12-19 | 2013-06-27 | 가부시키가이샤 에스이엔 | 이온주입방법 및 이온주입장치 |
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US8168962B2 (en) * | 2009-08-11 | 2012-05-01 | Advanced Ion Beam Technology, Inc. | Method and apparatus for uniformly implanting a wafer with an ion beam |
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Publication number | Publication date |
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GB0428236D0 (en) | 2005-01-26 |
JP5047463B2 (ja) | 2012-10-10 |
CN100583376C (zh) | 2010-01-20 |
KR20050074309A (ko) | 2005-07-18 |
US20040191931A1 (en) | 2004-09-30 |
CN1691269A (zh) | 2005-11-02 |
GB2409929A (en) | 2005-07-13 |
TWI304224B (en) | 2008-12-11 |
US7049210B2 (en) | 2006-05-23 |
GB2409929B (en) | 2006-07-26 |
KR101123841B1 (ko) | 2012-03-16 |
TW200531139A (en) | 2005-09-16 |
US20060197016A1 (en) | 2006-09-07 |
US7253424B2 (en) | 2007-08-07 |
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