201133537 六、發明說明： 【發明所屬之技術領域】 特別是涉及一種離子注 本發明涉及半導體製造設備， 入裝置及方法。 【先前技術】 離子注人方法用來把通常稱之為雜_原子或分子引 入革巴標基#，從破變基料糾H離子注人方 用於對材騎行表面注人，叹變其物理和化學性能。 其令域興趣較，㈣子^法在單晶或多晶石夕 ’是製造現代频電路中的—射規技術過程。由 =導體產品的生產逐漸趨向較大的半導㈣圓（從8英 =J2英寸，_在已向18英寸發展），目前單晶圓技術 (一:人處理-片晶圓）已被廣泛地制。晶圓工件越大， =需的時間就越長’達到一定的注入劑量均勻性和注 入角度均句性也越來越難以實現。 雷福ίΓ子Ϊ應㈣域中，掃描離子束一般有兩種方式： 往往IΓ掃描。導流係數較大的離子束在其傳輸過程中 I生束流崩潰，任何靜電勢在離子束傳輸中的存 舍影響到離子束的引出和傳輸，離子束的橫向尺寸 加’導致在離子束達到補之前，就撞擊到離子 邊Γ損失掉了。因此’對於高導流係 、專輸，一般不使用任何電掃描裝置，而是使用 用=或不掃描離子束。在離子束應關域，磁掃描一般 二=二極磁鐵，用於瞬間偏轉離子束，但在該偏轉方向 維度itΓ的聚焦效果很弱’而且在另外—個橫向的垂直 ^ 現為散焦效應，所以如果要使束流保持一定的發 3/19 201133537 散角度和傳輸效率，就需要另外再設置其他束流光學器件 對其進行聚焦，這樣將導致束流傳輸路徑變長，對束流的 傳輸效率不利。 【發明内容】 本·1¾明要解決的技術問題是為了克服現有技術中的離 子注入方法對束流的利用率不高的缺陷，提供一種成本較 低的忐夠以均勻且較高的流強分佈、均勻的角度分佈高效 地進行注入的離子注入裝置及方法。 本發明是通過下述技術方案來解決上述技術問題的： 種離子;έ人裝置，其特點在於，其包括：—離子源和〆 引出系統，該引出系統用於從該離子源引出離子束；一品 質分析磁鐵，用於偏轉來自該引出系統的離子束，以從該 離子束中選擇一預設能量範圍内的離子束；一核正磁鐵， 用於對來自該品質分析磁__設能量·_離子束 在豐f平面内的束流張角進行校正；-變速轉彎系統，用 於將來自該校正磁鐵的該預設能絲_的離子束偏 預’並使其加速或減速至預雜人能量— 工< 掃#彡統’帛岐工件 預設能量範__子束。 ㈣磓過该 子束品質分析磁鐵能夠從來自該引出系統的離 子==子束，該變速轉f系統能夠使該低能離 心奶/内進订兩次偏轉並同時減速，該工件掃h 子束=高St析:=來自該_統的離 子束在水平面内進上:===: 4/19 201133537 掃描系統能夠使工件在水平和豐直方向進行二維掃描運 動。 較佳地’在該引出系統與該品質分析磁鐵之間設有一 掃，磁鐵、，用於對來自該引出系統的離子束在暨直^向進 一掃描ϋ且該σσ質分析磁鐵能夠從來自該掃描磁鐵的 離子束巾選擇低麟子束’該變速㈣純㈣使該低能 離子束在水平面内進行兩次偏轉並同時減速，該工件掃描 系統能夠使工件進行一維水平掃描運動，其中，該低能: • ?束在工件處的束流分佈範圍在縱向上覆蓋工件。· 車乂佳地，在該引出系統與該品質分析磁鐵之間設有一 掃^磁鐵、’,用於對來自該引出系統的離子束在登直方向進 亚且，該品質分析磁鐵能夠從來自該掃描磁鐵的 選擇高能離子束’該變速轉彎系統能夠使該高能 束在水平面内進行—次偏轉並同時加速或減速，該工 =描系統_使工件進行—維水平掃描運動，其中，該 商能離子束在工件處的束流分佈範圍在縱向上覆蓋工件厂 鲁」η。較’崎描賴在豎直方向的掃㈣度範圍為 較佳地，該品質 45。〜11〇0 〇 較佳地，該校正磁鐵倉 正至與束流傳輪路徑平行。 。亥σσ質分析磁鐵能夠使該離子束偏轉 該校正磁鐵能夠將豎直平面_束流張角校 較佳地，在工件所在平面内並且鄰接工株h古一土201133537 VI. Description of the invention: [Technical field to which the invention pertains] In particular, the invention relates to a semiconductor manufacturing apparatus, an apparatus and a method. [Prior Art] The ion injection method is used to introduce the commonly known as a hetero atom or a molecule into the Geba standard #, and the H ion ion injection from the broken base material is used to inject the surface of the material, and it is changed. Physical and chemical properties. It makes the domain interest more than (4) sub-method in the single crystal or polycrystalline stone is the process of manufacturing the modern frequency circuit - the technology of the spectrometer. From the production of = conductor products to a larger semi-conductive (four) circle (from 8 inches = J2 inches, _ has been developed to 18 inches), the current single-wafer technology (a: human processing - wafers) has been widely Local system. The larger the wafer workpiece, the longer the time required. It is increasingly difficult to achieve a certain injection dose uniformity and injection angle uniformity. In the field of Rayford, the ion beam is generally scanned in two ways: often I scan. The ion beam with a large diversion coefficient collapses during its transmission. The existence of any electrostatic potential in the ion beam transmission affects the extraction and transmission of the ion beam. The lateral dimension of the ion beam is added to the ion beam. Before reaching the patch, it hits the ion edge and loses it. Therefore, for high conductivity systems, dedicated transmissions, generally no electrical scanning device is used, but the ion beam is used with or without scanning. In the ion beam should be closed, the magnetic scan is generally two = two-pole magnet, which is used to instantaneously deflect the ion beam, but the focusing effect of the dimension in the deflection direction is very weak 'and in the other - horizontal vertical is the defocus effect Therefore, if the beam is to maintain a certain 3/19 201133537 dispersion angle and transmission efficiency, it is necessary to additionally set other beam optics to focus it, which will cause the beam transmission path to become longer and the beam current Transmission efficiency is unfavorable. SUMMARY OF THE INVENTION The technical problem to be solved is to overcome the shortcomings of the prior art ion implantation method that the utilization rate of the beam is not high, and to provide a lower cost and a uniform and high flow intensity. An ion implantation apparatus and method for efficiently implanting a distributed, uniform angular distribution. The present invention solves the above technical problems by the following technical solutions: a seed ion device, which is characterized in that it comprises: an ion source and a helium extraction system for extracting an ion beam from the ion source; a quality analysis magnet for deflecting an ion beam from the extraction system to select an ion beam from a predetermined energy range from the ion beam; a nuclear positive magnet for setting energy from the quality analysis magnetic__ · The ion beam is corrected in the beam opening angle in the abundance plane; a variable speed turning system for biasing the ion beam of the predetermined energy wire from the correction magnet and accelerating or decelerating it to pre-hybrid Human energy - work < sweep #彡统'帛岐 workpiece preset energy van __ beam. (4) The beam quality analysis magnet can pass the ion== beamlet from the extraction system, and the variable speed system can deflect the low energy centrifugal milk/inner two times and simultaneously decelerate, and the workpiece sweeps the sub beam =High St:: The ion beam from the system is in the horizontal plane: ===: 4/19 201133537 The scanning system enables the workpiece to be scanned in two dimensions in horizontal and vertical directions. Preferably, a sweep is provided between the extraction system and the quality analysis magnet, and the magnet is used to scan the ion beam from the extraction system in a straight line and the σσ analysis magnet can be obtained from the The ion beam of the scanning magnet selects a low lining beam. The shifting (four) pure (four) causes the low energy ion beam to be deflected twice in the horizontal plane and simultaneously decelerated. The workpiece scanning system enables the workpiece to perform a one-dimensional horizontal scanning motion, wherein Low energy: • The beam distribution at the workpiece covers the workpiece in the longitudinal direction. · In a good manner, a scanning magnet, ' is provided between the lead-out system and the quality analyzing magnet for inputting the ion beam from the extraction system in the straightening direction, and the quality analyzing magnet can come from The scanning magnet selects a high-energy ion beam. The variable-speed turning system enables the high-energy beam to perform a secondary deflection in the horizontal plane and accelerate or decelerate at the same time, and the workpiece is subjected to a horizontal scanning motion, wherein the quotient The beam current distribution of the ion beam at the workpiece covers the workpiece factory in the longitudinal direction. The quality is 45, which is better than the sweep (four) degree in the vertical direction. 〜11〇0 〇 Preferably, the correction magnet cartridge is parallel to the beam path. . The σσ σ analysis magnet can deflect the ion beam. The correction magnet can correct the vertical plane _ beam angle, preferably in the plane of the workpiece and adjacent to the plant
5/19 201133537 較佳地，該束流診斷設備包括不具有束流角度測量功 能的法拉第杯，以及具有垂直和/或水平方向束流角度測量 功能的法拉第杯。 本發明的另一技術方案為：一種利用上述離子注入裝 置的離子注入方法，其特點在於，其包括以下步驟：&: 利用該引出系統從該離子源引出離子束；心、通過該品質 分析磁鐵偏轉來自該引出系統的離子束’以從該離子束中 選擇二預設能量範圍内的離子束；s3、通過該校正磁鐵對 來自該品質分析磁鐵的該預言史能量範圍内的離子束在暨直 平面内的束流張角進行校正；S4、通過該變速轉弯系統將 來自該校正磁鐵的該預設能量範圍内的離子束偏轉至預設 位置和方向，並使其加速或減速至預設注入能量；心、通 過該工件掃描系統使工件以一預設角度往 設能量範圍内的離子束。 出==料中通過該品質分析磁鐵從來自該引 選擇低能離子束，在步驟~中通過該變 低能離子束在水平面内進行兩次偏轉並同 寺減速，在步驟s5中通過該工件掃描 豎直方向進行：·轉描獅。 ^料水千和 較佳地，在步羯S2中通過該品質分析磁鐵 出系統的離子束中選擇高能離子束，在步驟S4中通過= ，¥祕使該騎離子束在水平㈣ = 時加速或減速，在步1订-人偏-痒並同 水平和謝㈣_離件在 掃描：也在步在驟該之=分析磁㈣ b、S2之間，通過該掃描磁鐵對來自該 201133537 引出系統的離子束在豎直方向 掃描磁鐵的二二=: 水平面離子束在 維水平掃描運動，其5中通 =鐵在丑直方向的掃指角度範圍使得該低能二 處的束流分佈範圍在縱向上覆蓋工件。_ 較佳地，在該引出系統與該品質 =出糸統的離子束在豎直方向騎掃描，在步驟 =質分析麵絲自卿細_離 7=驟= 過該變逮__高能 過該工件二在細 ^描磁鐵在^直方向的掃描角度範圍使得該高能離子束 在工件處的束齡佈_在縱向上覆蓋工件。 地’該掃描磁鐵在登直方向的掃描角度範圍為 45。〜=地，在步驟&中該品質分析磁鐵使該離子束偏轉 張角==Ϊ ί 中該校正磁鐵將登直平面内的束流 張角杈正至與束流傳輪路徑平行。 較佳地，在工件所在平面内並 =設備，在步驟、中通過該束流診斷設:二i 的束流強度和角度分佈。 較佳地纟步驟Ss中該束流診斷設備將测量資料回饋 201133537 給一用於控制該離子注入裝置的處理器。 本發明的積極進步效果在於：本發明可以通過控制掃 描磁鐵、品質分析磁鐵和校正磁鐵的電流大小，控制束流 的流強和角度分佈，提高束流的利用效率，上述三組磁^ 的相互配合，能夠更方便地優化束流的劑量和角度的均勻 性’·另外，通過變速轉彎系統對束流的偏轉、聚焦和變速 =制，使得束流不但具有較高的流強，還能夠保持較好的 能量單色性；另外，通過束流診斷設備的資料測量和回饋， 使得處理器能夠基於這些測量資料進一步地調節束流傳輸 過程中各s件的參數，在反復進行關量、回饋、調節過 程之後，便能夠實現參數的優化，最終實現增大離子束在 工件上的/主入流強、精破控制離子入射角度、提高注入離 子束劑量的準確性的目的，從而在較大的離子能量範圍（幾 十eV到幾百keV)内提高裝置注入的效率。 【實施方式】 下面結合附圖給出本發明較佳實施例，以詳細說明本 發明的技術方案。 參考第一圖和第二圖，本發明的離子注入裝置主要包 括：一離子源和一引出系統，該引出系統用於從該離子源 引出離子束；一品質分析磁鐵，用於偏轉來自該引出系統 的離子束，以從該離子束中選擇一預設能量範圍内的離子 束（即下述實施例中所述的高能離子束或低能離子束）；一 校正磁鐵，用於對來自該品質分析磁鐵的該高能或低能離 子束在豎直平面内的束流張角進行校正；一變速轉彎系 統，用於將來自該校正磁鐵的該高能或低能離子束偏轉至. 預設位置和方向，並使其能量狀態從傳輸能量加速或減速 8/19 201133537 至預設的最終注入能量；一工件掃描系統，用於使工件以 -預設歧往復掃顧職高能或減離子束，以實 子束對工件的均勻注入。 、 相應地’利用上述離子注入裳置執行的離子注入方法 主要包括以下步驟： & s]、利用該引出系統從該離子源引出離子束。 s2、通過該品#分析磁鐵偏轉來自..則出系“统的離子 束’以從該離子束中選擇出所需的高能或低能離子束。 心二該校正磁鐵對來自該品質分析磁鐵的該高能 或低月b離子束在登直平面_束流張角進行校正。 二速轉f系統將來自該校正磁鐵的該高能 次低此離子束偏轉至預設位置和方向，並 傳輪能量加速或減速至預設的最終注人能量Γ 一 描通二工件掃描系統使工件以-預設角度往復掃 通過该_或低能離子束，以完成離子注入。 況對輪齡崎描磁鐵的情 實施例1 能量本㈣在不採崎描麵骑況下進行 出量超低)的離子束注入時的俯視示意圖： 糸統2從離子源1引屮 Μ 析磁鐵4偏轉例如90。左^子第束該離子束被品質分 從中分(第—_紙面平面内），以 品質分析^ 4 正賴5，但在該過程中 橫向上的相對位置保持;=中的離子在 束在賢直平面内的束流張角進行校正’較 9/19 201133537 正至與束流的傳輸路解行（如第三騎示），以使得束流 最，能夠均勻地1人工件^接著，該低能離子束被變速轉 f系統6在水平面内（在第-_紙面平_)進行兩次 偏轉（如第所示）並同時減速、聚焦，最終在預設位 置以預設方向注人工件。該變速轉‘料、統6使得該較低能 量或超低能量_子束㈣在㈣較高流_同時，保持 較好的能量單色性。而1件則由工件掃描系統7控制，通 過機械手臂從大氣環境被傳遞進真空腔，然後保持一預設 角度並在水平方向（沿第—ϋ中的箭頭A方向）和賢直方 ，（第圖的垂直紙面方向）進行二維機械掃描運動，反 復通過束流，使離子束劑量均勻地分佈到工件上，當完成 離子注入之後再由機械手臂將工件從真空腔傳遞至大氣環 境。 另外還可以在工件所在平面内並且鄰接工件處設置 一束流診斷設備，用來測量束流的與注入過程相關的各項 ，數，例如束流在工件處的強度和角度分佈，以供操作人 員參考。该束流診斷設備的結構可以包括：不具有東流角 度’貝]$功此的法拉第杯，以及具有垂直和/或水平方向束流 角度測量功此的法拉第杯中的一種或多種。另外，該束流 ^斷e又備還可以將這些測量資料回饋給用於控制該離子注 入裴置中的各個元件的處理器，使得該處理器能夠基於這 些測量資料進一步調節各個元件的參數設置，在反復進行 5亥測量、回饋、調節過程之後，便能夠實現元件參數的優 化’例如通過不斷地調節各組磁鐵的電流大小，優化束流 的流強和角度分佈，更好地提高束流的利用效率。 未採用掃描磁鐵的該離子注入裝置也可以用於執行高 10/19 201133537 能離子束的注入（圖中未示）。 能離子束的注人的不同之處在束；^與上述低 將爽自弓丨屮糸妨9 ΑΑ ·*/>· 夸口口質分析磁鐵4 將來自引出糸統2的離子束偏轉例 選擇出高能離子束送入校正磁左右以從中刀離 平面内將術離二Γ 變迷賴統6會在水 十面内將該同此離子束進行一次偏轉 減速以及聚焦，而注入過程其门夺將其加速或 能離子束的注入完全類似。其餘步驟則與本實施例中低 實施例2 第二圖所示為本發明採用了掃 量較高的離子束注人時 ㈣Μ下進们b 心MU处旦—π 圖’該能量較高的離子 了巧例如此里在50kev以下的As+、p+ 本實施例在引出系統2與品質分析磁鐵4 鐵3’離子束㈣出系統2從離子源1 弓I出之後，物描磁鐵3在豎直方向、並在例如_5。〜+5。的 角度靶圍内快速掃描（第四圖所示即為離子束被向上偏轉 =態)，從而使得離子束在不斷地快速上下== 作:一疋的分佈’並且掃描磁鐵3的掃描動 破壞束流的形狀。然後，當經婦描後的離子束通 ，口 4 “斤磁鐵4時，同樣被品質分析磁鐵4偏轉例如9〇。 f右，以從中分離選擇出高能離子束送入校正磁鐵5，在該 4中品質分析磁鐵4同樣不改變束流的形狀，即束流中 _子在橫向上的相對位置保持不變。校正磁鐵5會對該 =能離子束在豐直平面内的束流張角進行校正，較佳地將 j張角校正至與束流的傳輸路徑平行（如第三圖所示）。接 著，該高能離子束被變速轉彎系統.6，在水 圖的紙面平面内）進行—次偏轉並被聚焦，同時進行加^ 11/19 201133537 設位置以職方—^件。通過掃描 以传得走、、今在刀鐵4以及校正磁鐵5對束流的影響’可 在本實施二中:達到卫件處時在縱向上覆蓋工件，例如 ΪΪ= 高能離子束在工件處會形成-個縱向上 —維分佈，賴覆蓋晶圓直徑小於或 I mm、工件，而當晶圓直徑大於3〇〇mm時，也可 以通過調節掃描磁鐵3、σ ^ 以及校正磁鐵5的 jtttt件的縱向覆蓋，地，通過對掃描 進仃適當的調節，賴使得束流流強在豎直 到均-J分佈。在本實施例中，針對晶圓直徑小於 二鄉I 3GQlnm的工件’該工件掃描系統7在將工件與束流 2上對準之後，只f使工件進行—維水平方向（沿第 頭A方向）的機械掃描運動，便能夠使得該高 ^子束的猶均勻地注人到工件上。這樣大大減少了注 需的時間’提高了離子注入的生產效率。另外，在本 包例中同樣3以⑦置與實施例丨相同的束流診斷設備， 1通過不斷地調節各個元件的參數，例如掃描磁鐵3、品質 =鐵4以及校正磁鐵5的電流大小，優化束流的流強 口角度分佈，更好地提高束流的利用效率。 採用了掃描磁鐵的該離子注人裝置也可以用於執行低 子束的注人（圖中未示）。低能離子束的注人與上述高 子束的注人的不同之處在於，此時，品質分析磁鐵4 、：來自掃描磁鐵3的離子束偏轉例如9〇。左右，以從中分離 =擇出低能離子束送入校正磁鐵5 ;變速轉彎系統6會在水 隹面内將該低能離子束進行兩次偏轉並同時將其.減速、聚 '、、、而’主入過程的其餘步驟則與本實施例中高能離子束的 12/19 201133537 注入完全類似。 上述各實施例中的掃描磁鐵、 鐵均可以採用現有的電磁㈣眚5目質刀析磁鐵、权正磁 轉、變速控制也可以利用公知的電效應或磁: 應加以實現，故在此均不做贅述。 綜上所述，本發明的該離子注入 ，子束在工件上的注人流強，精確控制離子人射角度: 確性，在較大的離子能量範圍 的技=====方式’但是本領域 不月離本發明的原理和實㈣前提下，可 此^ 式做出多種變更或修改， 施方 的保護範圍。 更和修改均落入本發明 【圖式簡單說明】 第一圖為本發明的離子注入裝置的第一 實施例的俯視 不意圖 第二圖為本發明的離子注 示意圖。 、置的第二貫施例的俯視 第二圖為本發明的離子注 果的側視示意圖。 裝置中校正磁鐵的校正效 果的：圖：發明的離子注入裝亀磁鐵的掃描效 【主要元件符號說明】 1 離子源 13/19 201133537 2 引出系統 3 掃描磁鐵 4 質量分析磁鐵 5 校正磁鐵 6 變速轉彎系統 6’ 變速轉彎系統 7 工件掃描系統5/19 201133537 Preferably, the beam diagnostic apparatus includes a Faraday cup that does not have a beam angle measurement function, and a Faraday cup that has a vertical and/or horizontal beam angle measurement function. Another technical solution of the present invention is: an ion implantation method using the above ion implantation apparatus, characterized in that it comprises the following steps: &: extracting an ion beam from the ion source by using the extraction system; the heart, passing the quality analysis a magnet deflects an ion beam from the extraction system to select an ion beam from the ion beam within two predetermined energy ranges; s3, through which the ion beam in the predicted energy range from the quality analysis magnet is Calibrating the beam opening angle in the straight plane; S4, deflecting the ion beam from the preset energy range of the correcting magnet to a preset position and direction by the shifting turning system, and accelerating or decelerating to the pre-predetermined The implantation energy is set by the heart, and the workpiece is scanned by the workpiece scanning system to set the ion beam in the energy range at a predetermined angle. The material is analyzed by the quality analysis magnet from the selected low energy ion beam, and in the step ~, the low energy ion beam is deflected twice in the horizontal plane and decelerated with the temple, and the workpiece is scanned vertically in step s5. Straight direction: · Turn the lion. Preferably, in the step S2, the high-energy ion beam is selected from the ion beam of the mass out-of-system by the quality analysis, and in step S4, the ion beam is accelerated at the level (four) = by == Or decelerate, in step 1 order - person bias - itching and the same level and thank you (four) _ disconnection in the scan: also in the step of the = analysis magnetic (four) b, S2, through the scanning magnet pair from the 201133537 The ion beam of the system scans the magnet in the vertical direction. The water beam is scanned horizontally in the horizontal direction. The range of the sweeping angle of the iron in the ugly direction is such that the beam distribution of the low energy is in the range of Cover the workpiece longitudinally. _ Preferably, the extraction system and the ion beam of the quality=exit system are scanned in the vertical direction, in step = qualitative analysis, the surface is from the fine _ away from 7 = sudden = over the change __ high energy The workpiece 2 scans the range of the scanning angle of the magnet in the straight direction such that the beam of the high-energy ion beam at the workpiece covers the workpiece in the longitudinal direction. The scanning angle of the scanning magnet in the straightening direction is 45. ~= Ground, in the step & the quality analysis magnet deflects the ion beam by an angle == Ϊ ί where the correction magnet aligns the beam opening angle in the straight plane parallel to the beam path. Preferably, in the plane of the workpiece and = device, in the step, through the beam diagnostics: the beam intensity and angular distribution of the second i. Preferably, in step Ss, the beam diagnostic device feeds the measurement data 201133537 to a processor for controlling the ion implantation device. The positive progress of the present invention is that the present invention can control the flow intensity and angular distribution of the beam by controlling the current of the scanning magnet, the quality analyzing magnet and the correcting magnet, and improve the utilization efficiency of the beam. Coordination, it is more convenient to optimize the uniformity of the dose and angle of the beam'. In addition, the deflection, focusing and shifting of the beam by the variable-turning system can make the beam not only have a high flow intensity, but also maintain Better energy monochromaticity; in addition, through the data measurement and feedback of the beam diagnostic device, the processor can further adjust the parameters of each component in the beam transmission process based on the measurement data, and repeatedly perform the correlation and feedback. After the adjustment process, the parameters can be optimized, and finally the purpose of increasing the / main inflow intensity of the ion beam on the workpiece, finely controlling the incident angle of the ion, and improving the accuracy of the ion beam dose injection, thereby achieving a larger The efficiency of device injection is increased in the ion energy range (several tens of eV to several hundred keV). [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings to explain the technical solutions of the present invention. Referring to the first and second figures, the ion implantation apparatus of the present invention mainly comprises: an ion source and an extraction system for extracting an ion beam from the ion source; and a quality analysis magnet for deflecting from the extraction An ion beam of the system to select an ion beam (ie, a high energy ion beam or a low energy ion beam as described in the following embodiments) from the ion beam; a correction magnet for the quality Calibrating the beam angle of the high or low energy ion beam of the magnet in a vertical plane; a variable speed turning system for deflecting the high energy or low energy ion beam from the correction magnet to a preset position and direction, and The energy state is accelerated or decelerated from the transmitted energy 8/19 201133537 to a preset final injection energy; a workpiece scanning system is used to make the workpiece reciprocate with a pre-determined high or negative ion beam, with a real beam Uniform injection of the workpiece. Accordingly, the ion implantation method performed by the above ion implantation skirt mainly includes the following steps: & s], using the extraction system to extract an ion beam from the ion source. S2, through the product # analysis magnet deflection from: the system "existing ion beam" to select the desired high-energy or low-energy ion beam from the ion beam. The second correction magnet is from the quality analysis magnet The high energy or low moon b ion beam is corrected at the straight plane _ beam opening angle. The two speed rpm system deflects the high energy sub-low beam from the correction magnet to a preset position and direction, and accelerates the transmission energy. Or decelerate to a preset final injection energy Γ a two-part workpiece scanning system that reciprocates the workpiece through the _ or low-energy ion beam at a predetermined angle to complete the ion implantation. Example 1 Schematic diagram of the energy source (4) when the ion beam is injected with an ultra-low volume in the case of no picking surface riding: The system 2 is deflected from the ion source 1 by the magnet 4, for example, 90. Left ^子The beam is divided by the quality of the ion beam (in the plane of the -_ paper plane), and the quality analysis is based on 5, but the relative position in the lateral direction is maintained in the process; the ions in the beam are in the plane of the beam Beam angle correction for correction' compared to 9/19 2011335 37 to the transmission path of the beam (such as the third ride), so that the beam is the most, can evenly 1 workpiece ^ then, the low-energy beam is transferred to the f system 6 in the horizontal plane (in the first -_Paper level _) Perform two deflections (as shown) and simultaneously decelerate and focus, and finally inject the workpiece in the preset direction at the preset position. The shifting is made by the material, which makes the lower energy or super The low energy _ beam (four) in (four) higher flow _ while maintaining a good energy monochromaticity, while one piece is controlled by the workpiece scanning system 7, through the robotic arm from the atmospheric environment is transferred into the vacuum chamber, and then maintain a pre- Set the angle and perform a two-dimensional mechanical scanning motion in the horizontal direction (in the direction of the arrow A in the first ϋ) and the sinogram, (the vertical paper direction of the figure), and repeatedly pass the beam to evenly distribute the ion beam dose to the workpiece. Above, after the ion implantation is completed, the workpiece is transferred from the vacuum chamber to the atmospheric environment by the robot arm. In addition, a beam diagnostic device can be disposed in the plane of the workpiece and adjacent to the workpiece for measuring the beam current and the injection process. Each item, number, such as the intensity and angular distribution of the beam at the workpiece, for reference by the operator. The structure of the beam diagnostic apparatus may include: a Faraday cup having no east flow angle 'beauty', and having The beam angles in the vertical and/or horizontal directions are measured in one or more of the Faraday cups. In addition, the beam is further provided to feed back the measurement data to each of the ion implantation devices. The processor of the component enables the processor to further adjust the parameter settings of each component based on the measurement data, and after repeated 5 measurements, feedback, and adjustment processes, component parameters can be optimized, for example, by continuously adjusting each group. The current of the magnet optimizes the flow intensity and angular distribution of the beam to better improve the utilization efficiency of the beam. The ion implantation device that does not use a scanning magnet can also be used to perform the injection of a high 10/19 201133537 ion beam ( Not shown in the figure). The difference between the injection of the ion beam is in the beam; ^ and the above-mentioned low will be cool from the bow 9 ΑΑ · * / > · boast oral analysis magnet 4 will be from the extraction system 2 ion beam deflection example Selecting the high-energy ion beam to send the correction magnetic to the left and right to remove the 从 迷 从 6 6 6 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 会 离子 离子It is completely similar to the acceleration or ion beam injection. The remaining steps are the same as in the second embodiment of the present embodiment. The second figure shows that the present invention uses a relatively high-scanning ion beam to inject (4) the b 进 b 心 心 MU MU — π ' ' Ion, for example, As+, p+ below 50 keV. In this embodiment, after the extraction system 2 and the quality analysis magnet 4, the iron 3' ion beam (four), the system 2 is ejected from the ion source 1, the object magnet 3 is vertical. Direction, and for example _5. ~+5. The angle of the target is quickly scanned (the fourth image shows the ion beam being deflected upward = state), so that the ion beam is constantly moving up and down ==: a distribution of one's and the scanning dynamic beam of the scanning magnet 3 The shape of the stream. Then, when the ion beam after the passage is passed, the port 4 is "pulled by the magnet 4, and is also deflected by the quality analyzing magnet 4 by, for example, 9 〇. f is right, and the high-energy ion beam is supplied to the correction magnet 5 from the separation. 4, the quality analysis magnet 4 also does not change the shape of the beam, that is, the relative position of the _ sub-direction in the lateral direction remains unchanged. The correction magnet 5 performs the beam opening angle of the ion beam in the abundance plane. Correcting, preferably correcting the j opening angle to be parallel to the beam propagation path (as shown in the third figure). The high energy ion beam is then subjected to a variable speed turning system.6, in the plane of the water image. Deflect and be focused, and at the same time add ^ 11/19 201133537 to set the position to the staff - ^ pieces. Through the scanning to pass away, and now the impact of the knife 4 and the correction magnet 5 on the beam' can be used in this second Medium: Cover the workpiece in the longitudinal direction when the guard is reached. For example, ΪΪ = high-energy ion beam will form a longitudinal-dimensional distribution at the workpiece, covering the wafer diameter less than or I mm, the workpiece, and when the wafer diameter is larger than When 3〇〇mm, it can also be adjusted by scanning The longitudinal coverage of the iron 3, σ ^ and the jtttt member of the correcting magnet 5, by appropriate adjustment of the scanning enthalpy, causes the beam current to be strong in the vertical until the uniform-J distribution. In this embodiment, for the wafer A workpiece having a diameter smaller than that of the Erxiang I 3GQlnm. After the workpiece scanning system 7 aligns the workpiece with the beam 2, only the mechanical scanning motion of the workpiece in the horizontal direction (in the direction of the head A) can be made. The beam of the high beam is evenly injected onto the workpiece. This greatly reduces the time required for injection. 'Improve the production efficiency of ion implantation. In addition, in the case of this package, the same 3 is the same as the embodiment. The beam diagnostic apparatus 1 optimizes the parameters of the respective components, such as the scanning magnet 3, the quality = the iron 4, and the current of the correcting magnet 5, optimizes the angular distribution of the flow intensity of the beam, and better improves the utilization of the beam. The ion injection device using the scanning magnet can also be used to perform the injection of a low beamlet (not shown). The difference between the injection of the low energy ion beam and the injection of the high beam is that at this time Product The analysis magnet 4: the ion beam deflection from the scanning magnet 3 is, for example, 9 〇. Left and right, separated therefrom = the low energy ion beam is supplied to the correction magnet 5; the variable speed turning system 6 performs the low energy ion beam in the leeches The two steps of decoupling and simultaneously decelerating, poly', and 'the main steps of the main entrance process are exactly similar to the 12/19 201133537 injection of the high energy ion beam in this embodiment. The scanning magnets in the above embodiments, The iron can be used in the existing electromagnetic (four) 目 5 mesh knives, magnets, weights, and shifts. It can also use known electrical effects or magnetism: it should be implemented, so it will not be described here. According to the ion implantation of the present invention, the beam current on the workpiece is strong, and the ion incidence angle is accurately controlled: the accuracy, the technique in the larger ion energy range ===== mode 'but the field is not in the present invention Under the premise of the principle and the actual (4), a variety of changes or modifications can be made to the scope of the application. Further, the modifications are as follows: BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a plan view of a first embodiment of an ion implantation apparatus of the present invention. The second view of the second embodiment is a side view of the ion implantation of the present invention. Correction effect of the correction magnet in the device: Fig.: Scanning effect of the inventive ion implantation mounting magnet [Main component symbol description] 1 Ion source 13/19 201133537 2 Extraction system 3 Scanning magnet 4 Mass analysis magnet 5 Correction magnet 6 Variable speed turning System 6' variable speed turning system 7 workpiece scanning system
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